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February 2006

FDS8884N

-ChannelPowerTrench

MOSFET

2006 Fairchild Semiconductor CorporationFDS8884 Rev. A

www.fairchildsemi.com1

FDS8884

N-Channel PowerTrenchMOSFET30V, 8.5A, 23m

General Descriptions

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

rDS(on) and fast switching speed.

Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A

Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A

Low gate charge

100% RG Tested

RoHS CompliantLEA

DFREE

M

TA

E

L

N

TI

O

MP

E

N

I

MOSFET Maximum Ratings TA = 25C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

VDS Drain to Source Voltage 30 V

VGS Gate to Source Voltage 20 V

IDDrain Current Continuous (Note 1a) 8.5 A

Pulsed 40 A

EAS Single Pulse Avalanche Energy (Note 2) 32 mJ

PDPower dissipation 2.5 W

Derate above 25oC 20 mW/ oC

TJ, TSTG Operating and Storage Temperature -55 to 150oC

RJA Thermal Resistance, Junction to Ambient (Note 1a) 50oC/W

RJA Thermal Resistance, Junction to Case (Note 1) 25oC/W

Device Marking Device Package Reel Size Tape Width Quantity

FDS8884 FDS8884 SO-8 330mm 12mm 2500 units

4

3

2

1

5

6

7

8

S

D

SS

SO-8

DD

D

G

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MOSFET

FDS8884 Rev. Awww.fairchildsemi.com2

Electrical Characteristics TJ = 25C unless otherwise noted

Off Characteristics

On Characteristics (Note 3)

Dynamic Characteristics

Switching Characteristics(Note 3)

Drain-Source Diode Characteristics

Symbol Parameter Test Conditions Min Typ Max Units

BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V 30 V

BVDSS

TJ

Breakdown Voltage Temperature

Coefficient

ID = 250A, referenced to

25oC23 mV/oC

IDSS Zero Gate Voltage Drain CurrentVDS = 24V 1

AVGS = 0V TJ = 125

oC 250

IGSS Gate to Source Leakage Current VGS = 20V 100 nA

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250A 1.2 1.7 2.5 V

VGS(th) TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250A, referenced to

25oC-4.9 mV/oC

rDS(on) Drain to Source On Resistance

VGS = 10V, ID = 8.5A, 19 23

mVGS = 4.5V , ID = 7.5A, 23 30

VGS = 10V, ID = 8.5A,

TJ = 125oC

26 32

Ciss Input CapacitanceVDS = 15V, VGS = 0V,

f = 1MHz

475 635 pF

Coss Output Capacitance 100 135 pF

Crss Reverse Transfer Capacitance 65 100 pF

RG Gate Resistance f = 1MHz 0.9 1.6

td(on) Turn-On Delay TimeVDD = 15V, ID = 8.5A

VGS = 10V, RGS = 33

5 10 ns

tr Rise Time 9 18 ns

td(off) Turn-Off Delay Time 42 68 ns

tf Fall Time 21 34 ns

Qg Total Gate ChargeVDS = 15V, VGS = 10V

ID = 8.5A9.2 13 nC

Qg Total Gate Charge VDS = 15V, VGS = 5V

ID = 8.5A

5.0 7 nC

Qgs Gate to Source Gate Charge 1.5 nC

Qgd Gate to Drain Charge 2.0 nC

VSD Source to Drain Diode VoltageISD = 8.5A 0.9 1.25 V

ISD = 2.1A 0.8 1.0 V

trr Reverse Recovery Time IF = 8.5A, di/dt = 100A/s

33 ns

Qrr Reverse Recovery Charge 20 nC

Notes:1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

drain pins. RJC is guaranteed by design while RCA is determined by the users board design.

2: Starting TJ = 25C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V.3: Pulse Test:Pulse Width

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Typical Characteristics TJ = 25C unless otherwise noted

Figure 1. On Region Characteristics

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00

10

20

30

40

VGS = 4.5V

VGS = 3V

VGS = 3.5V

VGS = 4.0V

VGS = 5.0V

VGS = 10V

PULSE DURATION = 80sDUTY CYCLE = 0.5%MAX

VDS

, DRAIN TO SOURCE VOLTAGE (V)

ID,DRAINCURRENT

(A)

Figure 2.

5 10 15 20 25 30 35 400.5

1.0

1.5

2.0

2.5

3.0

NORMALIZED

DRAINTOSOURCEON-RES

ISTANCE

ID, DRAIN CURRENT(A)

VGS = 3V

VGS = 10VVGS = 5V

VGS = 4.5V

VGS = 4V

VGS = 3.5V


Normalized On-Resistance vs Draincurrent and Gate Voltage

Figure 3. Normalized

-80 -40 0 40 80 120 1600.6

0.8

1.0

1.2

1.4

1.6

ID = 8.5A

VGS = 10V

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED

DRAINTOSOURCEON-RESISTANCE

On Resistance vs JunctionTemperature

Figure 4.

2 4 6 8 1015

20

25

30

35

40

45

50

55

60

TJ = 25oC

TJ = 150oC

ID = 8.5A PULSE DURATION = 80sDUTY CYCLE = 0.5%MAX

VGS, GATE TO SOURCE VOLTAGE (V)

rDS(ON),DRAINTOSOURCE

ON-RESISTANCE(m

)

On-Resistance vs Gate to SourceVoltage

Figure 5. Transfer Characteristics

1 2 3 4 50

5

10

15

20

25

30

35

40

VDD= 5V

TJ = -55oC

TJ = 25oC

TJ = 150oC


VGS, GATE TO SOURCE VOLTAGE (V)

ID,D

RAINCURRENT(A)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.41E-3

0.01

0.1

1

10

VSD, BODY DIODE FORWARD VOLTAGE (V)

IS,REVERS

EDRAINCURRENT(A)

TJ = -55oC

TJ = 25oCTA = 150

oC

VGS = 0V40

Source to Drain Diode Forward Voltagevs Source Current

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Figure 7.

0 2 4 6 8 100

2

4

6

8

10

VDD = 20V

VDD= 10V

VGS,GATETOSOURCEV

OLTAGE(V)

Qg, GATE CHARGE(nC)

VDD= 15V

Gate Charge Characteristics Figure 8.

0.1 1 10

100

200

300

400

500

600

700

f = 1MHzVGS = 0V

CAPACITANCE

(pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

30

Capacitance vs Drain to Source Voltage

Figure 9. Unclamped Inductive SwitchingCapability

0.01 0.1 1 101

10

20

STARTING TJ = 125oC

STARTING TJ = 25oC

IAS,AVALANCHECURRENT(A)

20

tAV, TIME IN AVALANCHE(ms)

Figure 10.

25 50 75 100 125 1500

1

2

3

4

5

6

7

8

9

VGS= 10V

VGS= 4.5V

ID,DRAINCURRENT(A)

TA, AMBIENT TEMPERATURE(oC)

RJA = 50oC/W

Maximum Continuous Drain Current vsAmbient Temperature

Figure 11.

0.1 1 10 1000.01

0.1

1

10

100

DC

1s

100ms

10ms

1ms

100us

10us

ID,DRAINCURRENT(A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(on)SINGLE PULSE

TJ = MAX RATED

TA = 25oC

Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum PowerDissipation

10-5

10-4

10-3

10-2

10-1

100

101

102

1

10

100

1000

VGS=10V

SINGLE PULSE

t, PULSE WIDTH (s)

P(PK),

PEAKTRANSIENTPOWER(W)

2000TA = 25

oC

I = I25

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

150 TA

125------------------------


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10-5

10-4

10-3

10-2

10-1

100

101

102

103

1E-3

0.01

0.1

1

NORMALIZEDTHER

MAL

IMPEDANCE,ZJA

t, RECTANGULAR PULSE DURATION(s)

D =0.5

0.2

0.10.05

0.02

0.01

SINGLE PULSE

DUTY CYCLE-DESCENDING ORDER

2

PDM

t1

t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZJA x RJA + TA

FDS8884N

-ChannelPowerTrench

MOSFET


Figure 13. Transient Thermal Response Curve


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FDS8884 Rev. A www.fairchildsemi.com6

FDS8884N

-ChannelPowerTrench

MOSFET

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or(b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx

ActiveArray

Bottomless

Build it NowCoolFET

CROSSVOLT

DOME

EcoSPARK

E2CMOS

EnSigna

FACT

FACT Quiet Series

FAST

FASTr

FPS

FRFETGlobalOptoisolator

GTO

HiSeC

I2C

i-Lo

ImpliedDisconnect

IntelliMAX

ISOPLANAR

LittleFET

MICROCOUPLER

MicroFETMicroPak

MICROWIRE

MSX

MSXPro

OCX

OCXPro

OPTOLOGIC

OPTOPLANAR

PACMAN

POP

Power247

PowerEdge

PowerSaver

PowerTrench

QFET

QSQT Optoelectronics

Quiet Series

RapidConfigure

RapidConnect

SerDes

ScalarPump

SILENT SWITCHER

SMART START

SPM

Stealth

SuperFET

SuperSOT-3

SuperSOT-6

SuperSOT-8

SyncFET

TCMTinyLogic

TINYOPTO

TruTranslation

UHC

UltraFET

UniFET

VCX

Wire

Across the board. Around the world.

The Power Franchise

Programmable Active Droop

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I18

fds8884

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