fdc6420c 20v n & p-channel powertrench Ò mosfets

7/29/2019 FDC6420C 20V N & P-Channel PowerTrench MOSFETs

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September 2001

2001 Fairchild Semiconductor Corporation FDC6420C Rev C(W)

FDC6420C20V N & P-Channel PowerTrench MOSFETs

General Description

These N & P-Channel MOSFETs are produced using

Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimizeon-state resistance and yet maintain superiorswitching performance.

These devices have been designed to offer

exceptional power dissipation in a very small footprintfor applications where the bigger more expensiveSO-8 and TSSOP-8 packages are impractical.

Applications DC/DC converter

Load switch

LCD display inverter

Features

Q1 3.0 A, 20V. RDS(ON) = 70 m @ VGS = 4.5 V

RDS(ON) = 95 m @ VGS = 2.5 V

Q2 2.2 A, 20V. RDS(ON) = 125 m @ VGS = 4.5 V

RDS(ON) = 190 m @ VGS = 2.5 V

Low gate charge

High performance trench technology for extremely

low RDS(ON).

SuperSOT 6 package: small footprint (72% smaller than

SO-8); low profile (1mm thick).

D1

S2G1

D2S1

G2

SuperSOT -6TM

Pin 1

SuperSOT-6

3

2

1

4

5

6Q1(N)

Q2(P)

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Q1 Q2 UnitsVDSS Drain-Source Voltage 20 20 V

VGSS Gate-Source Voltage 12 12 V

ID Drain Current Continuous (Note 1a) 3.0 2.2 A

Pulsed 12 6

Power Dissipation for Single Operation (Note 1a) 0.96

(Note 1b) 0.9

PD

(Note 1c) 0.7

W

TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 C

Thermal CharacteristicsRJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 C/WRJC Thermal Resistance, Junction-to-Case (Note 1) 60 C/W

Package Marking and Ordering InformationDevice Marking Device Reel Size Tape width Quantity

.420 FDC6420C 7 8mm 3000 units

FDC6420C


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FDC6420C Rev C(W)

Electrical Characteristics TA

= 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS DrainSource Breakdown VoltageVGS = 0 V, ID = 250 A

VGS = 0 V, ID = 250 A

Q1Q2

2020 V

BVDSS

TJ

Breakdown Voltage Temperature

CoefficientID = 250 A, Ref. to 25C

ID = 250 A, Ref. to 25C

Q1Q2

13

11mV/C

IDSS Zero Gate Voltage Drain CurrentVDS = 16 V, VGS = 0 V

VDS = 16 V, VGS = 0 V

Q1Q2

1

1A

IGSSF GateBody Leakage, ForwardVGS = 12 V, VDS = 0 VVGS = 12 V, VDS = 0 V

Q1Q2

100100

nA

IGSSR GateBody Leakage, ReverseVGS = 12 V, VDS = 0 VVGS = 12 V, VDS = 0 V

Q1Q2

100100

nA

On Characteristics (Note 2)

VGS(th) Q1 VDS = VGS, ID = 250 A 0.5 0.9 1.5Gate Threshold Voltage

Q2 VDS = VGS, ID = 250 A 0.6 1.0 1.5

V

VGS(th) Q1 ID = 250 A, Ref. To 25C 3

TJ

Gate Threshold Voltage

Temperature Coefficient

Q2 ID = 250 A, Ref. to 25C 3

mV/C

RDS(on) Q1 VGS = 4.5 V, ID = 3.0 AVGS = 2.5 V, ID = 2.5 A

VGS = 4.5 V, ID = 3.0 A,TJ=125C

50

66

71

70

95

106

Static DrainSource

OnResistance

Q2 VGS = 4.5 V, ID = 2.2 AVGS = 2.5 V, ID = 1.8 A

VGS= 4.5 V,ID=2.2 A,TJ=125C

100

145

137

125

190

184

m

ID(on) Q1 VGS = 4.5 V, VDS = 5 V 12OnState Drain Current

Q2 VGS = 4.5 V, VDS = 5 V 6

A

gFS Q1 VDS = 5 V ID = 2.5 A 10Forward Transconductance

Q2 VDS = 5 V ID = 2.0A 6

S

Dynamic Characteristics

Ciss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 324Input Capacitance

Q2 VDS=10 V, V GS= 0 V, f=1.0MHz 337

pF

Coss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 82Output Capacitance

Q2 VDS=10 V, V GS= 0 V, f=1.0MHz 88

pF

Crss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 42Reverse Transfer Capacitance

Q2 VDS=10 V, V GS= 0 V, f=1.0MHz 51

pF

Switching Characteristics (Note 2)

td(on) Q1 5 10TurnOn Delay Time

Q2 9 18

ns

tr Q1 7 14TurnOn Rise Time

Q2 12 22

ns

td(off) Q1 13 23TurnOff Delay Time

Q2 10 20

ns

tf Q1 1.6 3TurnOff Fall Time

Q2

ForQ1:VDS =10 V, I DS= 1 A

VGS= 4.5 V, RGEN = 6

ForQ2:VDS =10 V, I DS= 1 A

VGS= 4.5 V, RGEN = 6

5 10

ns

Qg Q1 3.3 4.6Total Gate Charge

Q2 3.7

nC

Qgs Q1 0.95GateSource Charge

Q2 0.68

nC

Qgd Q1 0.7GateDrain Charge

Q2

ForQ1:VDS =10 V, I DS= 3.0 A

VGS= 4.5 V,

ForQ2:VDS =10 V, I DS= 2.2 AVGS= 4.5 V,

1.3

nC

FDC6420C


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FDC6420C Rev C(W)

Electrical Characteristics TA

= 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

DrainSource Diode Characteristics and Maximum Ratings

IS Maximum Continuous DrainSource Diode Forward Current Q10.8

AQ2 0.8

VSD Q1 VGS = 0 V, IS = 0.8 A (Note 2) 0.7 1.2DrainSource Diode ForwardVoltage

Q2 VGS = 0 V, IS = 0.8 A (Note 2) 0.8 1.2

V

Notes:

1. RJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RJC

is guaranteed by design while RCA

is determined by the user's board design.

a) 130 C/W when

mounted on a 0.125in

2pad of 2 oz.

copper.

b) 140 C/W whenmounted on a .004 in

2

pad of 2 oz copper

c) 180 C/W when mounted on aminimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDC6420C


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FDC6420C Rev C(W)

Typical Characteristics: N-Channel

0

2

4

6

8

10

12

0 1 2 3

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID,DRAINCURRENT(A)

VGS = 4.5V

2.0V

3.0V

3.5V

2.5V

0.8

1

1.2

1.4

1.6

1.8

2

0 2 4 6 8 10 12

ID, DRAIN CURRENT (A)

RDS(ON),NORMALIZED

DRAIN-SOURCEON-RESISTANCE VGS = 2.0V

4.5V

3.0V

2.5V

3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

RDS(ON),NORMALIZED

DRAIN-SOURCEON-RESISTANC

ID = 3.0A

VGS = 4.5V

0.02

0.06

0.1

0.14

0.18

0.22

1 2 3 4 5

VGS, GATE TO SOURCE VOLTAGE (V)

RDS(ON),ON-RESISTANCE(OHM) ID = 1.5A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation withTemperature.

Figure 4. On-Resistance Variation withGate-to-Source Voltage.

0

2

4

6

8

10

0.5 1 1.5 2 2.5 3

VGS, GATE TO SOURCE VOLTAGE (V)

ID,DRAINCURRENT(A)

TA = -55oC 25

oC

125oC

VDS = 5V

0.0001

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

IS,REVERSEDRAINCURRENT(A) VGS = 0V

TA = 125oC

25oC

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variationwith Source Current and Temperature.

FDC6420C


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FDC6420C Rev C(W)

Typical Characteristics

0

1

2

3

4

5

0 1 2 3 4

Qg, GATE CHARGE (nC)

VGS,GATE-SOURCEVOLTAGE(V ID = 3A VDS = 5V 10V

15V

0

90

180

270

360

450

0 5 10 15 20

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE(pF) CISS

COSS

CRSS

f = 1 MHzVGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

ID,DRAINCURRENT(A)

DC

10s

1s

100ms

RDS(ON) LIMIT

VGS = 4.5V

SINGLE PULSE

RJA = 180oC/W

TA = 25oC

10ms

1ms

0

1

2

3

4

5

0.1 1 10 100 1000

t1, TIME (sec)

P(pk),PEAKTRANSIENTPOWER(W SINGLE PULSE

RJA = 180C/W

TA = 25C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse MaximumPower Dissipation.

FDC6420C


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FDC6420C Rev C(W)

Typical Characteristics: P-Channel

0

1

2

3

4

5

6

0 0.5 1 1.5 2 2.5

-VDS, DRAIN-SOURCE VOLTAGE (V)

-ID,DRAINCURR

ENT(A)

-3.0V

-2.5V

-2.0V

-1.8V

VGS =- 4.5V

-3.5V

0.75

1

1.25

1.5

1.75

2

2.25

2.5

2.75

0 1 2 3 4 5 6

-ID, DRAIN CURRENT (A)

RDS(ON),NORMALIZED

DRAIN-SOURCEON-

RESISTANC

VGS = -2.0V

-3.5V

-3.0V

-4.5V

-2.5V

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation withDrain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

RDS(ON),NORMALIZED

DRAIN-SOURCEON-RESISTANC

ID = -2.2A

VGS = -4.5V

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

1 2 3 4 5

-VGS, GATE TO SOURCE VOLTAGE (V)

RDS(ON),ON-RESISTANCE(OHM)

ID = -1.1 A

TA = 125oC

TA = 25oC

Figure 13. On-Resistance Variation with

Temperature.

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

0

1

2

3

4

5

0.5 1 1.5 2 2.5 3

-VGS, GATE TO SOURCE VOLTAGE (V)

-ID,DRAINCURRENT(A)

TA = -55oC

125oC

VDS = -5V25

oC

0.0001

0.001

0.01

0.1

1

10

0 0.2 0.4 0.6 0.8 1 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

-IS,REVERSEDRAINCURRENT(A

TA = 125oC

25oC

-55oC

VGS = 0V

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variationwith Source Current and Temperature.

FDC6420C


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FDC6420C Rev C(W)

Typical Characteristics

0

1

2

3

4

5

0 1 2 3 4 5

Qg, GATE CHARGE (nC)

-VGS,GATE-SOURCEVOLTAGE(V

ID = -2.2A

VDS =- 5V

-15V

-10V

0

100

200

300

400

500

600

0 5 10 15 20

-VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE(pF)

CISS

CRSS

COSS

f = 1MHz

VGS = 0 V

Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.

0.01

0.1

1

10

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

-ID,DRAINCURRENT(A)

DC10s

1s

100ms

RDS(ON) LIMIT

VGS = -4.5V

SINGLE PULSE

RJA = 180oC/W

TA = 25oC

10ms

0

1

2

3

4

5

0.1 1 10 100 1000

t1, TIME (sec)

P(pk),PEAKTRANSIENTPOWER(W SINGLE PULSE

RJA = 180C/W

TA = 25C

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse MaximumPower Dissipation.

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

r(t),NORMALIZEDEFFECTIVETRANSIEN

THERMALRESISTANCE

RJA(t) = r(t) * RJA

RJA = 180C/W

TJ - TA = P * RJA(t)

Duty Cycle, D = t1 / t2

P k

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 21. Transient Thermal Response Curve.Thermal characterization performed using the conditions described in Note 1c.Transient thermal response will change depending on the circuit board design.

FDC6420C


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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

OPTOLOGIC

OPTOPLANAR

PACMAN

POP

Power247

PowerTrench

QFET

QS

QT Optoelectronics

Quiet Series

SILENT SWITCHER

FAST

FASTr

FRFET

GlobalOptoisolator

GTO

HiSeC

ISOPLANAR

LittleFET

MicroFET

MicroPak

MICROWIRE

Rev. H4

ACEx

Bottomless

CoolFET

CROSSVOLT

DenseTrench

DOME

EcoSPARK

E2CMOSTM

EnSignaTM

FACT

FACT Quiet Series

SMART START

STAR*POWER

Stealth

SuperSOT-3SuperSOT-6

SuperSOT-8

SyncFET

TinyLogic

TruTranslation

UHC

UltraFET

STAR*POWER is used under license

VCX

fdc6420c 20v n & p-channel powertrench Ò mosfets

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