fabrication and application of mos-hbtndr circuit using standard sige process
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ELECTRONICS LETTERS 26th April 2007 Vol. 43 No. 9. Fabrication and application of MOS-HBTNDR circuit using standard SiGe process. Kun Shan University. Department of Electronic Engineering. Student : Wei -Lun Sun. Advisor : Kwang-Jow Gan. Abstract - PowerPoint PPT PresentationTRANSCRIPT
Fabrication and application of MOS-HBTNDRcircuit using standard SiGe process
ELECTRONICS LETTERS 26th April 2007 Vol. 43 No. 9
Student:Wei -Lun Sun Advisor: Kwang-Jow Gan
Kun Shan University Department of Electronic Engineering
Abstract A novel negative differential resistance (NDR) circuit made of a metal-oxide-semiconductor field-effect-transistor (MOS) and a heterojunction bipolar transistor (HBT) is presented. By suitably modulating the width=length parameters of the MOS devices, thefabrication of this MOS-HBT-NDR circuit and its application to inverter design based on the standard 0.35 mm SiGe process was demonstrated.
Fig. 1 Configuration of MOS-HBT-NDR-based inverter circuit
Fig. 2 Simulated I-V curves by modulating Vgg and VG, respectively
Conclusion We have demonstrated the design and fabrication of the MOS-HBT-NDR circuit and inverter application based on the standard 0.35 mm SiGe BiCMOS process. This NDR circuit shows a good peak current control by means of the voltage Vgg. Being composed of a MOS and a HBT, it will be convenient to integrate with other Sibased or SiGe-based devices and circuits on the same chip. Furthermore, we still can fabricate this MOS-HBT-NDR circuit by the standard SiGe-based integrated circuit, even down to nanoscale process.
Fig. 3 Load-line analysis for inverter Fig. 4 Measured result for inverter