f7321d2.pdf

Parameter Maximum UnitsID @ TA = 25C Continuous Drain Current, VGS @ -10V -4.7 AID @ TA = 70C -3.8IDM Pulsed Drain Current -38PD @TA = 25C Power Dissipation 2.0 WPD @TA = 70C 1.3

Linear Derating Factor 16 mW/CVGS Gate-to-Source Voltage 20 Vdv/dt Peak Diode Recovery dv/dt -5.0 V/nsTJ, TSTG Junction and Storage Temperature Range -55 to +150 C

Co-packaged HEXFET PowerMOSFET and Schottky Diode

Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint

IRF7321D2

FETKY MOSFET & Schottky Diode

Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted)

Description

SO-8

VDSS = -30V

RDS(on) = 0.062Schottky Vf = 0.52V

The FETKYTM family of Co-packaged HEXFETs andSchottky diodes offer the designer an innovative boardspace saving solution for switching regulator andpower management applications. Generation 5HEXFETs utilize advanced processing techniques toachieve extremely low on-resistance per silicon area.Combinining this technology with InternationalRectifier's low forward drop Schottky rectifiers results inan extremely efficient device suitable for use in a widevariety of portable electronics applications.

The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics. TheSO-8 package is designed for vapor phase, infrared orwave soldering techniques.

Top View

81

2

3

4 5

6

7

A

A

S

G

D

D

K

K

Parameter Maximum UnitsRJA Junction-to-Ambient 62.5 C/W

Thermal Resistance Ratings

Notes: Repetitive rating pulse width limited by max. junction temperature (see fig. 11) ISD -2.9A, di/dt -77A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s duty cycle 2% Surface mounted on FR-4 board, t 10sec.

PD- 91667D

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2 www.irf.com

Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250A

0.042 0.062 VGS = -10V, ID = -4.9A 0.076 0.098 VGS = -4.5V, ID = -3.6A

VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250Agfs Forward Transconductance 7.7 S VDS = -15V, ID = -4.9A

-1.0 VDS = -24V, VGS = 0V -25 VDS = -24V, VGS = 0V, TJ = 55C

Gate-to-Source Forward Leakage 100 VGS = -20VGate-to-Source Reverse Leakage -100 VGS = 20V

Qg Total Gate Charge 23 34 ID = -4.9AQgs Gate-to-Source Charge 3.8 5.7 nC VDS = -15VQgd Gate-to-Drain ("Miller") Charge 5.9 8.9 VGS = -10V, See Fig. 6 td(on) Turn-On Delay Time 13 19 VDD = -15Vtr Rise Time 13 20 ID = -1.0Atd(off) Turn-Off Delay Time 34 51 RG = 6.0tf Fall Time 32 48 RD = 15, Ciss Input Capacitance 710 VGS = 0VCoss Output Capacitance 380 pF VDS = -25VCrss Reverse Transfer Capacitance 180 = 1.0MHz, See Fig. 5

MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified)

IDSS Drain-to-Source Leakage Current

Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current(Body Diode) -2.5ISM Pulsed Source Current (Body Diode) -30VSD Body Diode Forward Voltage -0.78 -1.0 V TJ = 25C, IS = -1.7A, VGS = 0Vtrr Reverse Recovery Time (Body Diode) 44 66 ns TJ = 25C, IF = -1.7AQrr Reverse Recovery Charge 42 63 nC di/dt = 100A/s

MOSFET Source-Drain Ratings and Characteristics

Parameter Max. Units ConditionsIf (av) Max. Average Forward Current 3.2 50% Duty Cycle. Rectangular Wave, Tc = 25C

2.0 See Fig.14 Tc = 70CISM Max. peak one cycle Non-repetitive 200 5s sine or 3s Rect. pulse Following any rated

Surge current 20 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied

Schottky Diode Maximum Ratings

Parameter Max. Units ConditionsVfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25C

0.77 If = 6.0, Tj = 25C0.52 If = 3.0, Tj = 125C0.79 If = 6.0, Tj = 125C .

Irm Max. Reverse Leakage current 0.30 Vr = 30V Tj = 25C37 Tj = 125C

Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25Cdv/dt Max. Voltage Rate of Charge 4900 V/s Rated Vr

Schottky Diode Electrical Specifications

( HEXFET is the reg. TM for International Rectifier Power MOSFET's )

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1

10

100

0.1 1 10

D

DS

20s PULSE WIDTH T = 25C A

-I

, Dr

ain

-to-So

urc

e C

urr

en

t (A)

-V , Drain-to-Source Voltage (V)

J

-3.0V

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V

1

10

100

0.1 1 10

D

DS

A-I

, Dr

ain

-to-So

urc

e C

urr

en

t (A)


-3.0V

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V

20s PULSE WIDTH T = 150CJ

1

10

100

3.0 3.5 4.0 4.5 5.0 5.5 6.0

T = 25C

T = 150C

J

J

GS

D

A

-I

, D

rain

-to-So

urc

e C

urr

en

t (A)

-V , Gate-to-Source Voltage (V)

V = -10V 20s PULSE WIDTH

DS

-60 -40 -20 0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R

, D

rain

-to-S

ourc

e O

n Re

sista

nce

(Norm

alize

d)

J

DS(

on)

V =

I =

GS

D

10V

4.9A

Power Mosfet Characteristics

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1

10

100

1 10 100

OPERATION IN THIS AREA LIMITEDBY RDS(on)

Single Pulse T T

= 150 C= 25 C

JC


-I

, D

rain

Cu

rre

nt (A

)I

, D

rain

Cu

rre

nt (A

)

DS

D

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

0

200

400

600

800

1000

1200

1400

1 10 100

C, Ca

pacit

an

ce (p

F)

DSV , Drain-to-Source Voltage (V)A

Ciss

Coss

Crss

0 10 20 30 400

4

8

12

16

20

Q , Total Gate Charge (nC)-V

,

Gat

e-to

-Sou

rce

Volta

ge (V

)G

GS

I =D -4.9AV =-15VDS

Fig 7. Typical Source-Drain DiodeForward Voltage

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4

T = 25C

T = 150C

J

J

V = 0VGS

SD

SD

A

-I

, R

ever

se D

rain

Cur

rent

(A)

-V , Source-to-Drain Voltage (V)


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!"#$

%

&'

0.1

1

10

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:1. Duty factor D = t / t2. Peak T = P x Z + T

1 2J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Ther

mal

R

espo

nse

(Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE(THERMAL RESPONSE)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0 10 20 30A

V = -4.5V

V = -10V

GS

GS

0.00

0.04

0.08

0.12

0.16

0 3 6 9 12 15A

I = -4.9AD

!


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Schottky Diode Characteristics

Fig. 13 - Typical Values ofReverse Current Vs. Reverse Voltage

Fig.14 - Maximum Allowable AmbientTemp. Vs. Forward Current

"

Fig. 12 - Typical Forward Voltage DropCharacteristics

0.1

1

10

100

0.0 0.2 0.4 0.6 0.8 1.0

FM

FIn

stan

tane

ou

s Fo

rwar

d Cu

rre

nt -

I

(A

)

Forward Voltage Drop - V (V)

T = 150C

T = 125C

T = 25C

J

J

J

0

20

40

60

80

100

120

140

160

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

F(AV)

A

Average Forward Current - I (A)

D = 3/4D = 1/2D =1/3D = 1/4D = 1/5

V = 80% RatedR = 62.5C/WSquare wave

thJAr

DC

Allo

wa

ble

Ambi

ent T

em

pera

ture

- (C

)

Forward Voltage Drop - VF (V)

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e 1

D

E

y

b

A

A1

H

K

L

.189

.1497

0

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MILLIMETERSINCHES

MIN MAXDIM

8

e

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

8 7

5

6 5

D B

E

A

e6X

H

0.25 [.010] A

6

7

K x 45

8X L 8X c

y

0.25 [.010] C A B

e1A

A18X b

C

0.10 [.004]

431 2

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070]

SO-8 (Fetky) Package Outline

SO-8 (Fetky) Part Marking Information

RECTIFIERLOGO

INTERNATIONAL

EXAMPLE: THIS IS AN IRF7807D1 (FETKY)

XXXX807D1

Y = LAST DIGIT OF THE YEAR

A = ASSEMBLY S ITE CODEWW = WEEK

LOT CODE

PRODUCT (OPTIONAL)P = DISGNATES LEAD - FREEDATE CODE (YWW)

PART NUMBER

8 www.irf.com

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 10/04

330.00(12.992) MAX.

14.40 ( .566 )12.40 ( .488 )

NOTES :1. CONTROLLING DIMENSION : MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )11.7 ( .461 )

8.1 ( .318 )7.9 ( .312 )

NOTES:1. CONTROLLING DIMENSION : MILLIMETER.2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 (Fetky) Tape and Reel

f7321d2.pdf

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