ev powertrain simulations in saber
TRANSCRIPT
Alan Courtay
October 29, 2015
Paris Saber Seminar, La Defense
Modeling of PMSM Motor Drive Multi Time Scale Analysis with Saber
© 2015 Synopsys, Inc. 2
Simplified Electric Vehicle Powertrain Modeled after Market Available Electric Vehicle
Published
PMSM Electric Motor Max power / torque: 80 kW / 280 Nm
Li-Ion Battery
Total energy: 24 kWh
Max power > 90 kW
Number of cells: 192 (2 parallel, 96 series)
Cell voltage: 3.8 V
Nominal system voltage: 364.8 V
Gear Ratio 1/7.94
Curb Weight 1521 kg
0-100 km/h ~ 10 sec
Drag Coefficient 0.28
Inverter Frequency 5 kHz
Assumed
PMSM Electric Motor Max power / torque: 100 kW / 178 Nm, 8 poles
Inverter Efficiency 90%
Gear Efficiency 97%
Wheel Radius 0.3 m
© 2015 Synopsys, Inc. 3
Simplified Electric Vehicle Powertrain Modeled after Market Available Electric Vehicle
Published
PMSM Electric Motor Max power / torque: 80 kW / 280 Nm
Li-Ion Battery
Total energy: 24 kWh
Max power > 90 kW
Number of cells: 192 (2 parallel, 96 series)
Cell voltage: 3.8 V
Nominal system voltage: 364.8 V
Gear Ratio 1/7.94
Curb Weight 1521 kg
0-100 km/h ~ 10 sec
Drag Coefficient 0.28
Inverter Frequency 5 kHz
Assumed
PMSM Electric Motor Max power / torque: 100 kW / 178 Nm, 8 poles
Inverter Efficiency 90%
Gear Efficiency 97%
Wheel Radius 0.3 m
IPMSM model from
JMAG-RT Motor Model
Library
© 2015 Synopsys, Inc. 4
1 2
3 4
• Level 1
– Behavioral Li-Ion battery
– Dynamic thermal dq inverter and PMSM
– Thermal network
• Level 2
– Average/non-switching inverter /w TLU losses
– LdLq or detailed FEA-based PMSM
• Level 3
– Ideal switch inverter /w TLU losses
• Level 4
– Improved datasheet-driven IGBT1
Abstraction Levels
© 2015 Synopsys, Inc. 5
1
© 2015 Synopsys, Inc. 6
1 Simplified Vehicle Dynamics
© 2015 Synopsys, Inc. 7
1
ia,va
ib,vb
ic,vc
a
b
c
Sinusoidal currents and switching/PWM voltages are abstracted to only
retain phase and amplitude of signals in synchronous reference frame
iq
id
vq
vd
i
v
© 2015 Synopsys, Inc. 8
1
FEA-based look-up tables used for
flux saturation Ld(id) and Lq(iq), and
speed/current dependent iron loss
© 2015 Synopsys, Inc. 9
1 Reactance Torque
© 2015 Synopsys, Inc. 10
1
N S
Reactance Torque
© 2015 Synopsys, Inc. 11
1 Reactance Torque
angle
torque
90o
© 2015 Synopsys, Inc. 12
1 Reluctance Torque
Br
Hc
m
The permanent magnets have low
permeability / high reluctance (~ air
gap). The rotor orients itself in the
position of least flux resistance.
© 2015 Synopsys, Inc. 13
1 Average Inverter Model
including Efficiency Map
© 2015 Synopsys, Inc. 14
Switching Losses 1
≈ 𝛼 ∙ 𝒗𝒐𝒇𝒇 ∙ 𝒊𝒐𝒏
on+off
𝑷𝒔𝒘 = 𝑬𝒔𝒘 ∙ 𝒇𝒔
= 𝑬𝒔𝒘 (𝒗𝒐𝒇𝒇, 𝒊𝒐𝒏) rec +
𝒊𝒐𝒏 (𝑨) 𝒗𝒐𝒇𝒇 (𝑽)
𝑬𝒔𝒘 (𝑱)
© 2015 Synopsys, Inc. 15
v
i
one 1D look-up table: 𝑃𝑐(𝑖) = 𝑖. 𝑣(𝑖)
Conduction Losses 1
© 2015 Synopsys, Inc. 16
1
Field Oriented Control
Vector Control
© 2015 Synopsys, Inc. 17
1
𝑖∗2 = 𝑖𝑑
∗2 + 𝑖𝑞∗2
𝜕𝑇
𝜕𝑖∗= 0
𝑖𝑑∗ =
𝜑𝑚 − 𝜑𝑚2 + 8 𝐿𝑞 − 𝐿𝑑
2𝑖∗2
4 𝐿𝑞 − 𝐿𝑑
𝑖𝑞∗ = 𝑠𝑔𝑛(𝑖∗) 𝑖∗2 − 𝑖𝑑
∗2
Maximum Torque Per Amp
𝑖𝑑∗
𝑖𝑞∗
𝑖∗
Field Oriented Control Field Oriented Control
MTPA 𝑖∗
𝑖𝑑∗
𝜃𝑖
𝑖𝑞∗
𝑖𝑑
𝑖𝑞
© 2015 Synopsys, Inc. 18
1 Flux Weakening
𝑖𝑑∗
𝑖𝑞∗
𝑖𝑑
𝑖𝑞
Field Oriented Control
© 2015 Synopsys, Inc. 19
1 Flux Weakening
𝑖𝑑∗
𝑖𝑞∗
𝑖𝑑
𝑖𝑞
Field Oriented Control
𝑉𝑞 = 𝑅𝑖𝑞 + 𝐿𝑞𝑑𝑖𝑞𝑑𝑡
+ 𝜔 𝐿𝑑𝑖𝑑 + 𝜑𝑚
𝑉𝑑 = 𝑅𝑖𝑑 + 𝐿𝑑𝑑𝑖𝑑𝑑𝑡
− 𝜔𝐿𝑞𝑖𝑞
𝑇 =3
4𝑝 𝜑𝑚𝑖𝑞 + 𝐿𝑑 − 𝐿𝑞 𝑖𝑑𝑖𝑞
R neglected,
steady-state
© 2015 Synopsys, Inc. 20
1 Flux Weakening
𝑖𝑑∗
𝑖𝑞∗
𝑖𝑑
𝑖𝑞
Field Oriented Control
𝑉𝑞 = 𝜔 𝐿𝑑𝑖𝑑 + 𝜑𝑚
𝑉𝑑 = −𝜔𝐿𝑞𝑖𝑞
𝑇 =3
4𝑝 𝜑𝑚𝑖𝑞 + 𝐿𝑑 − 𝐿𝑞 𝑖𝑑𝑖𝑞
At high speed, back-EMF
exceeds DC link voltage
© 2015 Synopsys, Inc. 21
1 Flux Weakening
𝑖𝑑∗
𝑖𝑞∗
𝑖𝑑
𝑖𝑞
Field Oriented Control
𝑉𝑞 = 𝜔 𝐿𝑑𝑖𝑑 + 𝜑𝑚
𝑉𝑑 = −𝜔𝐿𝑞𝑖𝑞
𝑇 =3
4𝑝 𝜑𝑚𝑖𝑞 + 𝐿𝑑 − 𝐿𝑞 𝑖𝑑𝑖𝑞
Increase current angle (negative
component of id) to “weaken”
magnet flux and reduce back-EMF
© 2015 Synopsys, Inc. 22
𝑖𝑑∗
𝑖𝑞∗
𝑖𝑑
𝑖𝑞
Field Oriented Control
MTPA 𝑖
−𝜑𝑚𝐿𝑑
𝜑𝑚𝐿𝑞 − 𝐿𝑑
𝑖𝑞
𝑖𝑑
1 Flux Weakening
𝑉𝑞 = 𝜔 𝐿𝑑𝑖𝑑 + 𝜑𝑚
𝑉𝑑 = −𝜔𝐿𝑞𝑖𝑞
𝑇 =3
4𝑝 𝜑𝑚𝑖𝑞 + 𝐿𝑑 − 𝐿𝑞 𝑖𝑑𝑖𝑞
Increase current angle (negative
component of id) to “weaken”
magnet flux and reduce back-EMF
𝑣2 = 𝑣𝑑2 + 𝑣𝑞
2
Voltage Limit Ellipse
𝑣2
𝜔2 = 𝐿𝑑𝑖𝑑 + 𝜑𝑚2 + 𝐿𝑞
2𝑖𝑞2
𝜃𝑖
© 2015 Synopsys, Inc. 23
𝑖𝑑∗
𝑖𝑞∗
𝑖𝑑
𝑖𝑞
Field Oriented Control
MTPA
𝑖
−𝜑𝑚𝐿𝑑
𝜑𝑚𝐿𝑞 − 𝐿𝑑
Increasing Speed
𝑖𝑞
𝑖𝑑
1 Flux Weakening
𝑉𝑞 = 𝜔 𝐿𝑑𝑖𝑑 + 𝜑𝑚
𝑉𝑑 = −𝜔𝐿𝑞𝑖𝑞
𝑇 =3
4𝑝 𝜑𝑚𝑖𝑞 + 𝐿𝑑 − 𝐿𝑞 𝑖𝑑𝑖𝑞
Increase current angle (negative
component of id) to “weaken”
magnet flux and reduce back-EMF
𝜃𝑖
𝑣2 = 𝑣𝑑2 + 𝑣𝑞
2
Voltage Limit Ellipse
𝑣2
𝜔2 = 𝐿𝑑𝑖𝑑 + 𝜑𝑚2 + 𝐿𝑞
2𝑖𝑞2
© 2015 Synopsys, Inc. 24
1
Field Oriented Control
𝑉𝑞 = 𝜔 𝐿𝑑𝑖𝑑 + 𝜑𝑚
𝑉𝑑 = −𝜔𝐿𝑞𝑖𝑞
𝑇 =3
4𝑝 𝜑𝑚𝑖𝑞 + 𝐿𝑑 − 𝐿𝑞 𝑖𝑑𝑖𝑞
Feedforward Compensation
© 2015 Synopsys, Inc. 25
1 • Analyze system efficiency over long driving cycles
• Evaluate energy flow in critical regimes
(deceleration, braking)
• Handle power dissipation and cooling
• Design stable motor control (e.g. FOC)
© 2015 Synopsys, Inc. 26
1 • Analyze system efficiency over long driving cycles
• Evaluate energy flow in critical regimes
(deceleration, braking)
• Handle power dissipation and cooling
• Design stable motor control (e.g. FOC)
© 2015 Synopsys, Inc. 27
1 2
Sinusoidal currents and voltages (no switching)
© 2015 Synopsys, Inc. 28
1 2
a
b
c
𝜃𝑚
𝜃𝑖
i
Accounts for
1. Mutual coupling between phases
2. Flux saturation
3. Spatial harmonics
© 2015 Synopsys, Inc. 29
1 2
• Analyze system dynamics
• Evaluate energy flow in critical regimes
(deceleration, braking)
• Design stable motor control (e.g. FOC)
• Evaluate torque ripples
Motor
Torque
Regenerative
Braking
Sloped Terrain Startup
© 2015 Synopsys, Inc. 30
1 2
• Analyze system dynamics
• Evaluate energy flow in critical regimes
(deceleration, braking)
• Design stable motor control (e.g. FOC)
• Evaluate torque ripples
Torque ripples due to
spatial harmonics
© 2015 Synopsys, Inc. 31
1 2
3
• Design PWM control (e.g. compensate dead time distortion)
• Mitigate faults in critical regimes (e.g. in flux weakening mode)
Dead time distortion
(corrected and uncorrected)
© 2015 Synopsys, Inc. 32
1 2
3 4
• Optimize gate drive tradeoff losses vs. EMI noise
• Control current/voltage overshoot
• Prevent accidental turn-on
𝑖 = 𝐶𝑐𝑔 ∙𝑑𝑉𝑐𝑒
𝑑𝑡≫ 1
Vg < Vge(th)
Rg
Vgei > Vge(th) c
e
𝑉 = 𝐿𝑒 ∙𝑑𝑖𝑐𝑑𝑡
≪ −1
Accidental turn-on
mechanisms
© 2015 Synopsys, Inc. 33
2016.03 IGBT Tool
• Improved matching of transient
characteristics
– Cge made non-linear
– Control of turn-off voltage oscillations
– Decoupling between turn-on and turn-off
• Easier characterization
– Optimizer at most steps, including
transient characteristics
– Turn-on and turn-off characteristics
combined in one view
– Improved DC anchor points
– Library of pre-characterized components
– Numerous bug fixes
© 2015 Synopsys, Inc. 34
IGBT Principle Collector/Anode
Emitter/Cathode
P+ Emitter
Gate
P
N- Base
P+
N+
• Two junctions
– J1 space charge region develops
when Vce < 0
– J2 space charge region develops
when Vce > 0 and Vge < Vge(th)
– Wide and low doped N- base region
→ large blocking voltage
• BJT+MOSFET
– Insulated gate → voltage control
– Holes injected from P+ emitter →
conductivity modulation
– High forward conduction current
density: 𝑖𝑐 = 𝑖𝑚𝑜𝑠 + 𝑖𝑝
• Slow removal of carriers in the
base → longer switching time
during turn-off and tail current
J1
J2
+
+
© 2015 Synopsys, Inc. 35
IGBT Principle Collector/Anode
Emitter/Cathode
P+ Emitter
Gate
P
N- Base
Rb
PNP
N-MOS
P+
N+
imos ip
(𝛽)
+ +
+
holes
electrons
• Two junctions
– J1 space charge region develops
when Vce < 0
– J2 space charge region develops
when Vce > 0 and Vge < Vge(th)
– Wide and low doped N- base region
→ large blocking voltage
• BJT+MOSFET
– Insulated gate → voltage control
– Holes injected from P+ emitter →
conductivity modulation
– High forward conduction current
density: 𝑖𝑐 = 𝑖𝑚𝑜𝑠 + 𝑖𝑝
• Slow removal of carriers in the
base → longer switching time
during turn-off and tail current
© 2015 Synopsys, Inc. 36
IGBT Principle Collector/Anode
Emitter/Cathode
P+ Emitter
Gate
P
N- Base
P+
N+
imos ip +
+
• Two junctions
– J1 space charge region develops
when Vce < 0
– J2 space charge region develops
when Vce > 0 and Vge < Vge(th)
– Wide and low doped N- base region
→ large blocking voltage
• BJT+MOSFET
– Insulated gate → voltage control
– Holes injected from P+ emitter →
conductivity modulation
– High forward conduction current
density: 𝑖𝑐 = 𝑖𝑚𝑜𝑠 + 𝑖𝑝
• Slow removal of carriers in the
base → longer switching time
during turn-off and tail current
© 2015 Synopsys, Inc. 37
IGBT Principle Collector/Anode
Emitter/Cathode
P+ Emitter
Gate
P
N- Base
P+
N+
+ • Two junctions
– J1 space charge region develops
when Vce < 0
– J2 space charge region develops
when Vce > 0 and Vge < Vge(th)
– Wide and low doped N- base region
→ large blocking voltage
• BJT+MOSFET
– Insulated gate → voltage control
– Holes injected from P+ emitter →
conductivity modulation
– High forward conduction current
density: 𝑖𝑐 = 𝑖𝑚𝑜𝑠 + 𝑖𝑝
• Slow removal of carriers in the
base → longer switching time
during turn-off and tail current
© 2015 Synopsys, Inc. 38
© 2015 Synopsys, Inc. 39
IKW75N65EL5
Static Characteristics
© 2015 Synopsys, Inc. 40
Quasi-Static Characteristics
IKW75N65EL5
© 2015 Synopsys, Inc. 41
IKW75N65EL5
Quasi-Static Characteristics
© 2015 Synopsys, Inc. 42
Ic
Vcc
Inductive Clamp Test Circuit
Vcc
Rg(off)
Vg(on)
Vg(off)
Lp
DUT
(IGBT)
-15V
Ic
DUT
(Diode)
Rg(on)
Vg(on)
© 2015 Synopsys, Inc. 43 1 1
1
1
2
2
2
2
3 3
3
3
4
4
4 4
5
5
5
5
𝐶𝑟𝑒𝑠 = 𝐶𝑔𝑐 𝐶𝑖𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑔𝑒
𝐶𝑜𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑐𝑒
© 2015 Synopsys, Inc. 44
𝐶𝑟𝑒𝑠 = 𝐶𝑔𝑐 𝐶𝑖𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑔𝑒
𝐶𝑜𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑐𝑒
Cies = dQg / dVgs
Miller plateau Vgs
~1.2nF
~1.2nF
© 2015 Synopsys, Inc. 45
IKW75N65EL5
Non Quasi-Static Characteristics
© 2015 Synopsys, Inc. 46
IKW75N65EL5
Non Quasi-Static Characteristics
© 2015 Synopsys, Inc. 47
IKW75N65EL5
Non Quasi-Static Characteristics
© 2015 Synopsys, Inc. 48
IKW75N65EL5
Thermal Characteristics
Cauer network Foster network
Duty cycle zero
sufficient to match
the other curves Only physical if
connected to
temperature source
© 2015 Synopsys, Inc. 49
Future Work
• Merging of MOSFET and IGBT
tools
• Improve DC characteristics for
SiC MOSFET’s
• sw1_l4 and pwld with accurate
switching losses (TLU)
• Battery characterization tool
(with enhanced model)
NXP TrenchMOS BUK9640-100A