euv lithography industrialization and future …pf lithography industrialization and future outlook....
TRANSCRIPT
Junji MiyazakiASML Japan
EUVL FEL WorkshopDecember, 2015
EUV Lithography Industrialization and future outlook
Outline
• NXE Roadmap• NXE:33x0B litho performance
and productivity• NXE:3400B• High NA EUV system
Public
12/13/2016Slide 2
Overlay [nm]55 WPH 125 WPH 185 WPH145 WPH
NXE:3300B
NXE:3350B
NXE:next
High NA
12/13/2016
Public
EUV extension roadmap
NXE:3400B2017
2015
2013
Roadmap: October 2016
introduction
products under study
7
3.5
3
<3
<2
Slide 3
EUV reduces multi-pattern process complexity# Process steps per layer
ArFiLE3
ArFiCross-spacer
CMP
Dry Etch
Metrology
Coat/Dev
Deposition
Hard mask
Wet Etch
Lithography
ArFi spacer grating
w/ 2 cuts
EUVsingle
exposure
ArFiLE4
EUVsingle
exposure
LOGIC DRAM
LE3=Litho+Etch+Litho+Etch+Litho+Etch
12/13/2016
PublicSlide 4
7 nm study with leading Logic chip maker projects lower wafer cost for EUV based processes
54x ArF immersion
Design Critical litho
9x EUV+19x ArFi
-12%
Total Wafer Processing Cost
FEOL MOL BEOLCritical
BEOLOther
Base
FEOL MOL BEOLCritical
BEOLOther
Base
Cost per wafer calculated for ASML cost model, all process steps
12/13/2016
PublicSlide 5
Outline
• NXE Roadmap• NXE:33x0B litho performance
and productivity• NXE:3400B• High NA EUV system
Public
12/13/2016Slide 6
Slide 7Public
12/13/2016
0102030405060708090
100
2014Q1
2014Q2
2014Q3
2014Q4
2015Q3
2015Q4
2016Q2
2016Q3
Demonstrated 85 wafers per hour on NXE:3350BAchieved with 125W source configuration Public
Thro
ughp
ut[W
afer
s pe
r hou
r]
• NXE:3350B ATP test: 26x33mm2, 96 fields, 20mJ/cm2
NXE:3300B at customers
NXE:3350BASML factory
NXE:3350Bat customers
12/13/2016Slide 8
Public
7 systems achieved over 80% availability (4 wk average)Consistency to be improved
Graph showing the maximum availability of each system over a 4 week period
12/13/2016Slide 9
Productivity improvement also available to customers3-day average of >1500 WpD achieved on NXE:3350B
12/13/2016
Public
Source: L.J. Chen (TSMC), EUVL Symposium, Hiroshima, Japan (24-26 Oct 2016).
Slide 10
EUV Source - Principle of operation
Source PedestalScanner Pedestal
Fab FloorFab Floor
Sub-fab Floor
Scanner
metrology for source to scanner alignment
CO2 system
Tin catch
Vessel
Vanes
Droplet Generator
Collector
Bea
m
Tran
spor
t
Power Amplifiers PP&MP Seed unit
Inte
rmed
iate
Focu
s U
nit
xz
12/13/2016
PublicSlide 11
Third generation Droplet Generators: average lifetime ~600 hours. Achieved >1000 hrs on multiple systems at multiple customers Public
0
5
10
15
20
25
30
0
200
400
600
800
1000
1200
1400
1600
15' Q3 15' Q4 16' Q1 16' Q2 16' Q3
Average Maintenance Tim
e/week
(hrs)
Lifetim
e (hrs)
• Average lifetime and maintenance time improved by factor >3
Type 3:• capability of tin refill and restart• enhanced particle elimination
EUVL 2015
12/13/2016Slide 12
Droplet generator run 1400 hr as of Oct 2016
Public
Typical collector lifetime improved by factor 1.5 in 2016Data from 80W configuration in the field
H1’16H2’16
-0.4%/Gp (EUVL 2016) -0.6%/Gp (SPIE 2016)
0
20
40
60
80
100
0 5 10 15
Refle
ctivity
[%]
0
20
40
60
80
100
0 5 10 15
Refle
ctivity
[%]
-0.1%/Gp
250W configuration (development source)
12/13/2016Slide 13
Outline
• NXE Roadmap• NXE:33x0B litho performance
and productivity• NXE:3400B• High NA EUV system
Public
12/13/2016Slide 14
NXE:3400B illuminator: increased pupil flexibility at full throughput
Field Facet Mirror
Pupil Facet MirrorIntermediate Focus
PublicSlide 15
2D clips: pitch 32nm in x- and y- direction, k1=0.39 Better pattern fidelity with lower Pupil Fill Ratio
Pupil Fill Ratio=40%
SPIE 9776, Jo Finders “Contrast optimization for 0.33NA lithography”Exposures done on a NXE:3350B system. On NXE:3350B, 20% PFR leads to loss of light.
Public
Pupil Fill Ratio=20%
12/13/2016Slide 16
PublicSlide 17
Matched Machine Overlay 1.8nm, meets NXE:3400B specificationNXE:3400B overlay improvements include calibrations and new wafer table
NXE:3400B-like system. Matching to etched reference wafers exposed on immersion
0
20
40
60
80
100
120
140
2014 2015 2016 2017target
2018target
Throug
hput [W
PH]
at 20 mJ/cm
2
Productivity roadmap towards >125 WPH in placeThroughput at targeted availability (>90%) sufficient for HVM insertion Slide 18
Public
Source power increase Source power increase
Transmission improvementFaster
wafer swap
Outline
• NXE Roadmap• NXE:33x0B litho performance
and productivity• NXE:3400B• High NA EUV system
Public
12/13/2016Slide 19
12/13/2016Slide 20
Public
High-NA: large resolution step in line with our historyNew product introductions providing step in resolution λ/NA, um
2005 20151995 201019900.01
0.10
1.00
20202000Year of introduction
i-Line 365 nm
KrF 248 nmKrF 248 nm
ArF 193 nmArF 193 nm
ArFi 193 nmArFi 193 nm
Major technology step (e.g. source, mirror)
EUV 0.33EUV 0.55
EUV 0.25
EUV 13.5 nmEUV 13.5 nm
Engineering optimization of numerical aperture resulting in a resolution step comparable to historical wavelength transitions
12/13/2016Slide 21
Public
Overview main System Changes High-NA tool
Source• Increased power
Lens• NA 0.55, high transmission• Improved Thermal Control
Mask Stage• 4x current acceleration• Same for REMA
Wafer Stage• 2x current acceleration
Illuminator• Improved
transmission
New Frames• Larger to
support Lens
Improved leveling
12/13/2016Slide 22
Public
EUV Optical Train
intermediate focus
collector
Reticle (mask)
wafer
plasma
field facet mirror
pupil facet mirror
W. Kaiser, J. van Schoot, Sematech Workshop on High-NA, 9 July 2013
Key-area where High-NA imposes
large angles
12/13/2016Slide 23
Public
Anamorphic magnification solves the problem at the mask
0%
10%
20%
30%
40%
50%
60%
70%
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Multilayer Reflectivity
[%]
Angle of incidence on the mask [deg]
Multilayer
Y0.33NA – Mag 4x
X
Y - 4x
0.55NA – Mag 4x
X
Y - 8x0.55NA – Mag 4x/8x
Multilayer Reflectivity
12/13/2016Slide 24
Public
High-NA >0.5NA 4x/8x anamorphic magnificationChief Ray Angle at Mask can be maintained
pupil
scan
wafer
scan
reticle
scan
• Anamorphic optics half field:8x Magnification in scan4x Magnification in other direction
• Chief ray angle ok Imaging ok
Pupil-in
scan
Pupil-out
The pattern at the mask will be 2x larger
Scanner prints half fields
12/13/2016Slide 25
Public
Anamorphic optics are used in cinematography“Don’t change the mask”
AnamorphicCamera Anamorphic
Projector
“The Mask”(24x36mm2)
16x9
16x9
12/13/2016Slide 26
Public
Imaging verification of the new Half Field conceptLogic N5 clip Metal-1, 11nm lines, SMO is done at 8x
Aerial Image Intensity in Hyperlith
FFQFHF
Note: pictures at same scale, smaller mask reflection is also visible
12/13/2016Slide 27
Public
High-NA Anamorphic Lens prints a half fieldBy utilizing the current 6” mask
Mask
Wafer
Lens
Maskfieldsize
Waferfieldsize
104 mm
132
mm
4x
26 mm
33 m
m
4x Conventional lensFull Field (FF)
HF
26 mm
16.5
mm
NewHalf Field (HF)
QF
104 mm
132
mm
4x/8x
FF
Note: rectangular slit shown for illustration purposes
12/13/2016Slide 28
Public
High-NA anamorphic Half Field conceptFaster stages enable high productivity
Half Field yields 2x more fields• 2x wafer stage acceleration maintains
overhead while going to twice number of scans
Y-magnification 4x 8x• 2x wafer acceleration results in 4x
mask acceleration
Full Fields Half Fields
Acceleration of wafer stage ~2x
Acceleration of mask stage ~4x
High-NA Field and Mask Size productivity500W enables throughput of >150wph with anamorphic HF
High-NA Half Field scanner
needs 500W for
150wph at 60mJ/cm2
Throughp
ut [3
00mm/hr]
Source Power/Dose [W/(mJ/cm2]
Throughput for various source powers and doses
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30 35
500 Watt60mJ/cm2
500W Watt30mJ/cm2
NXE:3300
WS, RS current performance
WS 2x, RS 4x
HF
High NA anamorphic
FF
12/13/2016Slide 29
Public
12/13/2016Slide 30
Public
High-NA calls for tight focus controlHigh-NA scanner will be introduced in line with focus scaling
focus control budget at introduction
Rayleighk2 = 1
NXE:3300
High-NA
12/13/2016Slide 31
Public
Way forward to 30 nm focus control
3300 performance
Optics improvements
Product wafer flatness
Focu
s C
ontr
ol [n
m]
0
20
40
60
80
100
120
Machine improvements (level sensor, stages, etc.)
Summary12/13/2016
Slide 32
EUV into production in 2018-2019 • More than 1,500 wafers per day (WpD) exposed on a NXE:3350B at a customer site
on average over three days at 85WpH configuration. Roadmap in place to secure >125WpH
• Best performance is four-week average above 90% on a NXE:3300B system• consistency between tools and across sites still needs to be significantly improved• Roadmap to >90% availability, with consistent performance, in place
• ASML expects that customers will take EUV into production in 2018-2019 timeframe
High-NA extends Moore’s Law into the next decade• New anamorphic concept enables good imaging with
existing mask infrastructure resulting in a Half Field image• New stages technologies and high transmission optics enables cost effective litho-
scaling• On going feasibility studies support design targets
Public