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CURRICULUM VITAE

EUROPEAN FORMAT

Personal information

First name/Surname Sabina SPIGA

Work Address Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy

Telephone/Fax/Mobile Tel: +39-039-6035938 Fax: +39-039-6881175 Mobile:+39-338-2240018

E-mail Professional(1): [email protected] Professional (2): [email protected] Personal: [email protected]

Nationality Italian

Place and Date of birth Bologna; 10/09/1971

Gender Female

Professional experience

Dates 16/02/2009 to date

Occupation or position held Researcher (permanent position)

Main activities and responsibilities Development of materials and emerging technologies for advanced electronic devices, with logic, non-volatile memory and memristor functionalities. Main research topics: (i) characterization of high-dielectric constant oxides as gate dielectrics for Si, and III-V based logic devices; (ii) advanced dielectric stacks for charge trapping FLASH non-volatile memory devices; (iii) resistive switching effects in transition metal oxides for applications in resistive switching memories, (iv) nanowire-based electronic devices; (v) memristors and neuromorphic architectures. Other: supervising students and post-docs; coordination R&D projects and/or research activities, at national and international level, also within EU Programmes; organization of international symposia, writing of proposal at national and international level; collaboration with Industries in the framework of research contracts; member of scientific committee of relevant conferences on material science and devices (IEDM, EMRS); evaluation of FP7-EU research projects

Name and address of employer Institute

CNR (National Research Council) – Piazzale A. Moro 7, 00185 Roma (Italy) IMM (Institute for Microelectronics and Microsystems) - Unit of Agrate Brianza (Laboratorio MDM), via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy

Type of business or sector Research

Dates 1/02/2004 -15/02/2009

Occupation or position held Researcher (Tenure-Track position) – (Public selection INFM n°838 - 10/10/2003)

Main activities and responsibilities Research on advanced logic devices, with Ge or III-V channels, and study on interface passivation; advanced memory devices: charge trapping memory and resistive RAM. Mask design using CAD software; process flow definition for device fabrication. Supervisor of students and post-docs; contribution to research activities in International/National projects, writing of research proposal, collaboration with Industry as responsible of activities


INFM – Corso Perrone 24, 16152 Genova, Italy (merged with CNR since 1/06/2005) Laboratorio MDM, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy


Dates 11/11/2002 -31/01/2004

Occupation or position held Post-Doc fellow (Assegno di Ricerca) - (Public selection INFM n°666 del 12/09/2002)

Main activities and responsibilities Study of high-dielectric constant materials for logic and memory devices, characterization of MOS devices by C-V, I-V, G-V, with focus on oxide/semiconductor interfaces and conduction mechanisms, IPE (Internal Photoemission) characterization of oxide/semiconductor band alignment in MOS devices, device fabrication, clean room work.


INFM – Corso Perrone 24, 16152 Genova (Italy); MDM National Laboratory, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy


mailto:[email protected]




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Dates 1/11/2001 -31/10/2002

Occupation or position held Post-Doc fellow

Main activities and responsibilities Electrical characterization of high dielectric constant oxides for logic and memory devices


INFM – Corso Perrone 24, 16152 Genova (Italy) MDM National Laboratory, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy


Dates June 1996 -June 1998

Occupation or position held Post-graduate research fellowship

Main activities and responsibilities - EBIC characterization of silicon substrates (oxygen precipitation), Raman characterization of TiSi2 phase formation.

- Courses attended: - VII National School of Material Science, INFM –Genova, , September 29th - October 10th 1997 ; internal courses in STMicroelectronics (Agrate Brianza –MI) on ULSI technology, thin film deposition, process integration, physics of electronic devices, material characterization, thermodynamic of technological processes


INFM – Corso Perrone 24, 16152 Genova (Italy) MDM Laboratory, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy


Education and training

Dates 1/11/1998 – 31/10/2001

Title of qualification awarded PhD in Material Science (Award date 8/01/2002)

Name and type of organisation University of Milano (Italy)

Research subject/activities/acquired skills

- Experimental work performed at INFM-MDM National Laboratory- Agrate Brianza (Italy) - Research topic: ion beam synthesis (IBS) and characterization of metallic (Sn, Sb) and

semiconducting (Si, Ge) nanocrystals in thin SiO2 films for memory application. - Two months at the Institute of Ion Beam Physics and Materials Research, FZR (Dresden,

Germany), in the framework of Large Scale Facility project supported by European Union - Three accepted proposals at the ESRF synchrotron (Grenoble, Francia): 08-01-259 “Local

structure of nanocrystals in dielectric layers for single electron effects”); 08-01-307 “Ion beam synthesis of Sb nanocluster in thin SiO2 for electronic applications: a Refle-XAFS study”; SI-836 “Refle-XAFS study of ultra-thin Y2O3 oxides and Y2O3/Si interface”.

- Thesis title: “Structural and electrical properties of nanocrystals produced by ion implantation in thin SiO2 films

Dates September 1990 – December 1995

Title of qualification awarded Laurea in Physics (Award date 15/12/1995)

Name and type of organisation Alma Mater Studiorum- University of Bologna (Italy)

Level in National classification 110/110

Principal subjects/acquired skills/thesis work

Physics of the matter, semiconductor physics, device physcis, programming FORTRAN and Pascal, electron microscopy Research activities during thesis: electrical characterization of polycrystalline silicon for solar cells by DLTS, EBIC, I-V and C-V measurements Title of the thesis: Grain boundary in polycrystalline silicon: electrical characterization and interface states

Other Titles 11/12/2013: National Habilitation as Associate Professor (II Fascia) – Sector: 02/B1 Fisica

Sperimentale della Materia


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Research

Research sectors and interests Micro and nanoelectronics, advanced materials for nanoscaled electronic devices, oxides and high-dielectric constant materials, oxide nanowire, emerging technologies for advanced logic and non-volatile memory devices, resistive switching effect in oxides and memristors towards memory, logic and cognitive applications

Bibliometric Indicators Papers on peer-reviewed journals, proceedings and book chapters > 100; From ISI web (21/06/2016): number of publication: 100, total number of citation: 1391, h-index:22

Participation to conferences/invited talks and seminars

9 invited talks in the last five years, several oral presentation (see ANNEX A) Invited lecturer at the Fudan University and invited seminar at Universities (see details later)

Tutoring Since 2004 I am/ have been supervisor of master students (11), short stage international trainee (5), PhD students (2), post-graduate fellows (4) and Post-Docs (6)

s

Organization of International

Conference

EMRS 2012 (Strasbourg-France, May 14-18,2012), Principal Organizer of Symposium L “Novel Functional Materials and Nanostructures for innovative non-volatile memory devices” (S. Spiga, C. Muller, R. Cowburn, H. Riel, J. Siegel)

CIMTEC 2014: Program Chair of the Symposium FM on “Novel Non-volatile Inorganic Memory Devices: materials, concepts and applications”; June 15-20, 2014 (Montecatini Terme, Italy)

MEMRISYS 2015: Technical Program Chair of the International Conference on Memristive Systems, 08 - 10 November 2015, Annabelle Hotel, Paphos, Cyprus

CIMTEC 2016: Program Chair of the Symposium K: “Non-volatile Memory Devices: materials, emerging concepts and applications”, June 5-9, 2016 (Perugia, Italy)

Committee Member Conference Technical/Scientific Committee Member: IEDM 2013 – Member of the Memory Technology subcommittee

IEDM 2014- Member of the Memory Technology subcommittee EMRS Fall Meeting 2014 (Warsaw University of Technology, Poland) – Member of Scientific Committee for the Symposium “Organized Nanostructures and Nano-objects: Fabrication, characterization and applications” EMRS Spring Meeting 2015 (Lille, France) – Member of the Scientific Committee for the Symposium “Non-volatile memories: materials, nanostructures and integration approaches”

Other

From August 2014- Member of the Management Committee (for Italy) of the Cost Action IC1401 IT - Memristors - Devices, Models, Circuits, Systems and Applications (MemoCiS) November 2013 -Invited external “Rapporteur et Membre du Jury” of the PhD thesis of the candidate Thérèse DIOKH University of Grenoble – Institut Polytechnique de Grenoble. Thesis Title:“Développement de mémorie OxRRAM embarquéè en Technologie CMOS avancée pour systèmes sur puce (SoC)”

Member of Editorial Board 2012/2013 - Guest Editor of the Special Issue on Thin Solid films (vol. 533; 30/04/2013) “Novel Functional Materials and Nanostructures for innovative non-volatile memory devices”

Professional Experience as project expert evaluator

2012. Independent expert, acting as evaluator, in the evaluation of research proposals (STREP and IP) in the framework of the FP7-ICT call. Employer: European Commission.

2013. Independent expert, evaluator of Marie Curie Proposals, Employer: European Commission.


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Participation to national and international projects and role

- 2016-2018 – European project NeuRAM3 – “NEUral computing aRchitectures in Advanced Monolithic 3D-VLSI nano-technologies”, Horizon2020- ICT-25-2015, grant n. 687299 (1/1/2016-31/12/2018) – Role: Principal Investigator for CNR

- 2014-2018 - MemoCiS (COST Action IC1401; ): “Memristors-Devices, Models, Circuits, Systems and Applications” (10/12/2014-9/12/2018). Role: Sabina Spiga (CNR) is member of of the Management Committee for Italy and Chair of the Work Group1 on Memristor Device Technology] .

- 2015-2018 – European project R2POWER300 – ““Preparing R2 extension to 300mm for BCD Smart Power” – Horizon 2020 - ECSEL-2014-2; grant. n. 653933 - Role: key person

- 2013-2016 – European project “RAMP: Real neurons-nanoelectronics Architecture with Memristive Plasticity" (1/11/2013-30/10/2016) – Role: Key person, responsible of the memristive device development

- 2010-2013 – National Project “MORE: Advanced metal-oxide heterostructures for nanoscale ReRAM” – financed by CARIPLO. Role: Coordinator

- 2008-2011 - European Integrated Project (FP7) GOSSAMER - Gigascale Oriented Solid State flAsh Memory for EuRope, coordinated by Numonyx. Role: Principal Investigator for CNR, participation to partner and review meeting, writing deliverables, coordination of the research activities

- 2007-2009. International Project ATHOS - Advanced gate stacks for high-mobility semiconductors; collaboration between IMEC and CNR-MDM . Role: Principal Investigator

- 2009-2011 International Project ARAMIS - Alternative III-V substRates for Advanced Metal Insulator Semiconductor devices; collaboration between IMEC and CNR-MDM. Role: Principal Investigator

- 2007-2010 National Project FIRB-MIUR RBIPO6YSJJ: "Innovative Technologies for high-density non-volatile memories". Role: Key person and task responsible, CNR representative at partner meetings, writing deliverables.

- 2006-2009 European Project EMMA “Emerging Materials for Mass-storage Architectures” (IST-STREP-FP6) – coordinated by W. Dirk (IMEC, Leuven, Belgium).- Role: Key person, CNR representative at partner and review meetings, writing deliverables, coordination of the research activities at Work-Package (WP1) level

- 2006 – 2009 - European Project REALISE "Rare earth oxide atomic layer deposition for

- innovations in electronics" (IST-NMP-FP6) – Role: contribution to research activities

- 2004-2007 European Project ET4US “Epitaxial Technologies for Ultimate Scaling” (IST-STREP-FP6), coordinated by A. Dimoulas (NCSR-Democritos, Athens, Greece). Role: Key person; CNR representative at the final review meeting.

- 2001-2004 European Project INVEST “Integration of very high-k dielectrics with silicon CMOS technology”, IST-FP5 , coordinated by A. Dimoulas (NCSR-Democritos, Athens, Greece). Role: contribution to research activities, writing deliverables.

- 2001-2004 European Project NEON “Nanoparticles for Electronics” – GROWTH FP5, coordinated by A. Claverie, CNRS (France). Role: contribution to research activities

- 2007-2008 International Project MDM-MEPHI (2007/2008) in the framework of Russian-Italian Research and Educational Center “Materials for micro-, nano and optoelectronics”-

- 2005 International Bilateral Project Italia-Polonia “Experimental and theoretical investigation of the interface between high-k dielectrics and semiconducting substrates” – financed by the Ministry of Foreign Affairs

- 2003-2006. National Project FIRB RBNE012N3X “Ultrascaled systems for electronics and photonics”. Role: contribution to research activities; writing deliverables.

Participation to Industrial Projects and role

I have been involved in the research projects with STMicrolectronics and Numonyx/Micron, with the role of responsible for the development of advanced material and technologies for ultrascaled memory devices and high-density capacitors. 2014/2016 Industrial project between CNR-IMM (Agrate B.) and STMicroelectronics. –Role: responsible of the Activity “MIM capacitors for power management and analogue applications” 2013/2014. Industrial project between CNR-IMM (Agrate B.) and STMicroelectronics 2013. Industrial Project between CNR-IMM and Micron (Agrate Brianza, Italy). 2009-2011 Industrial Project between CNR- MDM and Numonyx/Micron (Agrate Brianza, Italy). 2000-2008. Industrial Projects between INFM- MDM and STMicroelectronics (Agrate Brianza, Italy)


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Funding ID

Grants 2016-2018 – Project NeuRAM3 “NEUral computing aRchitectures in Advanced Monolithic 3D-VLSI nano-technologies”, Horizon2020- ICT-25-2015, grant n. 687299, Role: partner (principal investigator for CNR); EC financial contribution to CNR: 400.590,00 €

2010-2012 – Project “MORE: Advanced metal-oxide heterostructures for nanoscale ReRAM” – financed by CARIPLO – in the framework of the 2009 call “ Scientific and technologic research on advanced materials”; Role: national coordinator; financial contribution 152.000,00 €

2008-2010 - European Integrated Project (FP7) GOSSAMER - Gigascale Oriented Solid State flAsh Memory for EuRope, coordinated by Numonyx; Role: partner (Principal Investigator); EC financial contribution to CNR: 440.000,00 €.

2007-2009. International Project ATHOS - Advanced gate stacks for high-mobility semiconductors; collaboration between IMEC and CNR-MDM (financial contribution: 50.000,00 €)

2009-2011 International Project ARAMIS - Alternative III-V substRates for Advanced Metal Insulator Semiconductor devices; collaboration between IMEC and CNR-MDM (financial contribution: 50.000,00 €)

Teaching and seminars

Lectures - Invited lecturer at the FUDAN University (Shanghai-China), Department of Microelectronics for 1 month (May24th-June 20th, 2010)- course on “Microelectronic materials and processes” for master students, funded by the “Distinguished Scholar Teaching program of Fudan University.

- Assistant of the Experimental Laboratory course for undergraduate students on the techniques for material characterization (March-May 2008). Course supervisor Prof. Marco Fanciulli, Material Science Department, University of Milano-Bicocca (Italy).

Invited seminars at University and Schools

- 26.11.2010 Invited seminar: High-dielectric constant (high-κ) oxides for ultra-scaled logic and memory devices, University of Udine, faculty of Electronic Engineering, Udine (Italy)

- 22.11.2010, Invited seminar, Resistance switching memories, University of Modena, Faculty of Electronic Engineering, Moden (Italy)

- 27.05.2009 Invited seminar: “Oxide for Nanoelectronics”; School on superconductors and functional oxides, Palinuro (Italy)

- 25.03.2004. S. Spiga, “Formation of nanoclusters in dielectric matrix”; European PhD in Nanostructures and Nanotechnology, University of Milano-Bicocca (Italy)

- 04.04.2003 S. Spiga, “Advanced characterization techniques for microelectronics”, lecture in the framework of the Post graduate course on Nanotechnologies (Director Prof. Paolo Milani), University of Milano

Training Courses

- Course: “Politiche Regionali in tema di Ricerca e Innovazione” organized by Dipartimento Materiali e Dispositivi- CNR, Genova (Italy), November 29-30, 2011

- Course “Increasing Patent Awareness”, organized by CNR (National Center of Research), Roma (Italy), December 14-15, 2010

- Course on “Research Management”, organized by the CNR (National Center of Research), Genova (Italy), June 15-20, 2009

- Course “How to Negotiate, Manage & Administer EU Framework Contracts”, - teacher: Dr. Sean McCarthy di Hyperion LTD, Brussels (Belgio)


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Personal skills and competences

Mother tongue(s) Italian

Other language(s)

Self-assessment Understanding Speaking Writing

European level (*) Listening Reading Spoken interaction Spoken production

English C1 C2 C1 C1 C1

French A2/B1 B1/B2 A1/A2 A1/A2 A1/A2

(*) Common European Framework of Reference for Languages

Organisational skills Coordination and administration of people, projects and budgets, also related to national and international projects; organization of seminars and short trainings; organization of scientific symposia and conference, coordination of a Special Issue of Thin Solid Films.

Computer skills and competences Office™ tools (Word™, Excel™ and PowerPoint™); - knowledge of graphic design applications (Adobe Illustrator™, PhotoShop™), Autocad, Matlab, Origin, Labview

Annexes A. Presentation at International Conferences: invited and contributed talks B. Full list of publications on peer reviewed journals, book’s chapter and Proceedings of

International Conferences

http://europass.cedefop.europa.eu/LanguageSelfAssessmentGrid/en

ANNEX A. Presentation at International Conferences: invited and contributed talks


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Invited Presentations

1. S. Spiga, “Analog HfOx-RRAM switches for neural networks”, ECS PRIME 2016, Symposium D02, Honolulu (Hawaii, USA), October 2-7, 2016

2. S. Spiga, “Oxides for memristive device technology”, MRS MRS Fall meeting 2015, Symposium FF, Boston (USA), November 29-December 4, 2015

3. S. Spiga, “ALD of oxides for nanoelectronic devices: status and perspectives”, ALD Russia 2015, International workshop Atomic Layer Deposition Russia 2015, Moscow Institute of Physics and technology, Dolgoprudny (Russia), September 21-23, 2015

4. S. Spiga, “Material engineering and bottom up fabrication approaches for nanoscale memristive devices”, EMSR Spring Meeting, Symposium M, Lille (France), May 2015

5. S. Spiga, “Resistive switching in oxides for nonvolatile memories and neuromorphic computing”, IITC/MAM Conference 2015, Grenoble (France), May 2015

6. S. Spiga, “Oxides for memristive devices: from resistive switching memories to neuromorphic computing”, EMRS- Fall Meeting, Warsaw (Poland), September 15-19, 2014

7. S. Spiga, “Resistive switching in doped-HfO2”, Novel High-k Application Workshop, March 6, 2013, Dresden (Germany)

8. S. Spiga, "Materials engineering for nanoscaled resistive memories"- 2nd RRAM workshop, University of

Stanford (CA, USA) October 6-7, 2012

9. S. Spiga, Resistance switching in NiO thin films and nanowires for non-volatile memory applications, NN12, Salonicco (Greece), July 6th, 2012

10. S. Spiga, Resistive Memories, “Due giornate sulla micro e nano elettronica”, Università La Sapienza, Roma October 18th, 2010

11. S. Spiga, Resistance switching in transition metal oxides for non-volatile memory application, MRS 2010- Symposium G, San Francisco (CA), USA, April 5-9, 2010

12. S. Spiga, Emerging non-volatile memory device, Nanoforum 2009, Torino, June 10th 2009, Session on “Micro & Nanodevices”

13. S. Spiga, Resistance switching in amorphous and crystalline binary oxides, EMRS 2008 Spring Meeting, May 2008, Strasbourg (France)

Selected Oral Presentation

1. S. Spiga, S. Brivio, E. Cianci, C. Wiemer, A. Lamperti, F. G. Volpe, J. Frascaroli, E. Chiaverini, G. Tallarida, M. Fanciulli, Material engineering for resistive switching memories through ALD doping of binary oxides, EMRS-2013 Spring Meeting, Strasbourg (France), May 27-31, 2013

2. S. Spiga, S. Brivio, G. Tallarida, D. Perego, S. Franz, D. Deleruyelle, C. Muller, Resistive Switching in NiO Based Nanowire Array for Low Power RERAM”, Nature Conference 2012 “Frontiers in Electronic Materials: Correlation Effects and Memristive Phenomena”, Aachen (Germany), June 16-20, 2012

3. S. Spiga, G. Tallarida, C. Wiemer, M. Fanciulli, D. Perego, S. Bonelli, L. Cattaneo, S. Franz, Nanoscale resistive switching in metal/NiO/metal thin film and nanowire-heterostructures for memory applicatons, EMRS-2011 Spring Meeting, Nice (France), May 8-13, 2011

4. S. Spiga, G. Congedo, U. Russo, A. Lamperti, O. Salicio, F. Driussi, E. Vianello, Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories, ESSDERC 2010, Seville (Spain) September 13-17, 2010

5. S. Spiga, U. Russo, G. Congedo, A. Lamperti. O. Salicio, M. Fanciulli, Stack engineering of HfO2 –based charge trapping non volatile memory, MRS Spring Meeting 2010, San Francisco (CA), USA, April 5-9, 2010

6. S. Spiga, A. Lamperti, E. Cianci, G. Tallarida, F.G. Volpe, M. Fanciulli, A. Demolliens, Ch. Turquat, Ch. Muller, U. Russo, C. Cagli, D. Ielmini. “Engineering of electrode materials for NiO resistive switching non volatile memories”, MRS Sping Meeting, April 13-17, 2009, San Francisco, CA, USA

7. S.Spiga, “Resistive switching in binary oxides for ReRAM applications”, IMST 2008 Memory Workshop, Nov.2008, Leuven (Belgium)

8. S. Spiga, “Emerging materials and concepts for non-volatile memories” “INFM Workshop, November 21st, 2008

9. S. Spiga, C. Wiemer, G. Scarel, M. Fanciulli, “Electrical properties of rare earth oxide films grown by ALD”, E-MRS 2006 Spring Meeting (E-MRS - IUMRS - ICEM 06), Nice (France), May 29- June 2, 2006

10. S. Spiga, G. Scarel, C. Wiemer, G. Tallarida, S. Ferrari and M. Fanciulli, “Effects of the oxygen precursors on the electrical and structural properties of HfO2 films grown by ALD on Ge”, MRS Spring Meeting, San Francisco (CA), April 2005

ANNEX B. Full list of publications on peer reviewed journals, book’s chapter and Proceedings of International Conferences


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Publications on peer reviewed journals

2015

1. Jacopo Frascaroli , Stefano Brivio, Federico Ferrarese Lupi , Gabriele Seguini , Luca Boarino , Michele Perego, and Sabina Spiga , "Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly" , ACS Nano 9, 2518–2529 (2015)

2. Stefano Brivio, Jacopo Frascaroli, and Sabina Spiga, "Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices", Applied Physics Letters 107, 023504 (2015)

3. Jacopo Frascaroli, Flavio Giovanni Volpe, Stefano Brivio, and Sabina Spiga, "Effect of Al doping on the retention behavior of HfO2 resistive switching memories", Microelectronic Engineering 147, 104-107 (2015)

4. E. Covi, S. Brivio, M. Fanciulli, and S. Spiga, "Synaptic potentiation and depression in Al:HfO2-based memristor" , Microelectronic Engineering 147, 41-44 (2015)

5. Jacopo Frascaroli, Gabriele Seguini, Sabina Spiga, Michele Perego, Luca Boarino , "Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO2 substrates" , Nanotechnology 26, 215301 (2015)

2014

6. S. Brivio, G. Tallarida, E. Cianci and S Spiga, “Formation and disruption of conductive filaments in a HfO2/TiN structure, Nanotechnology 25, 385705 (2014)

7. G Seguini, J Llamoja Curi, S Spiga, G Tallarida, C Wiemer , M Perego , "Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2" , Nanotechnology 25, 495603 (2014)

8. Francesco Driussi, Sabina Spiga, Alessio Lamperti, Gabriele Congedo, and Alberto Gambi, “Simulation study of the trapping properties of HfO2 based charge–trap memory cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES 61, 2056-2063 (2014)

9. Elena Cianci, Alessandro Molle, Alessio Lamperti, Claudia Wiemer, Sabina Spiga, Marco Fanciulli, “Phase Stabilization of Al:HfO2 Grown on InxGa1−xAs Substrates (x = 0,0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition”, ACS Appl. Mater. Interfaces 6, 3455−3461 (2014)

10. Alessio Lamperti, Alessandro Molle, Elena Cianci, Claudia Wiemer, Sabina Spiga, Marco Fanciulli, “Effect on Al:MO2/InGaAs interface (M=Hf, Zr) of Trimethyl-aluminum pre-treatment during atomic layer deposition”, Thin Solid Films 563, 44-49 (2014)

2013

11. S. Vangelista, R. Mantovan, A. Lamperti, G. Tallarida, B. Kutrzeba-Kotowska, S. Spiga, M. Fanciulli, “Low-temperature atomic layer deposition of MgO thin films on Si”, J. Phys. D: Appl. Phys. 46, 485304 (2013)

12. S. Brivio, D. Perego, G. Tallarida, M. Bestetti, S. Franz and S. Spiga, “Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires”, Appl. Phys. Lett. 103, 153506 (2013)

13. A. Molle, E. Cianci, A. Lamperti, C. Wiemer, S. Spiga, M. Fanciulli , “A Viable Route to Enhance Permittivity of Gate Dielectrics on In0.53Ga0.47As(001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2 (Me = Zr, Hf)”, ECS Journal of Solid State Science and Technology 2, P395 (2013)

14. Spiga Sabina, Muller Christophe, Cowburn Russell, Riel Heike, Siegel Jan, “Preface to E-MRS 2012 Symposium L: Novel Functional Materials and Nanostructures for innovative non-volatile memory devices”, Thin Solid Films 533, V (2013)

15. G. Congedo, C. Wiemer, A. Lamperti, E. Cianci, A. Molle, F. G. Volpe, and S. Spiga, “Atomic layer-deposited Al–HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory”, Thin solid Films 533, 9 (2013),

16. D. Perego, S. Franz, M. Bestetti, L. Cattaneo, S. Brivio, G. Tallarida, and S. Spiga, “Engineered fabrication of ordered arrays of Au–NiO–Au nanowires”, Nanotechnology 24, 045302 (2013)

17. G. Congedo, A. Lamperti, O. Salicio, and S. Spiga, “Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications”, ECS Journal of Solid State Science and Technology 2, p. N1-N5 (2013)

18. A. Lamperti, E. Cianci, O. Salicio, L. Lamagna, S. Spiga, M. Fanciulli , "Thermal stability of high-κ oxides on SiO2/Si or SixNy/SiO2/Si for charge trapping non volatile memories" , Surface and Interface Analysis 45, 390-393 (2013)

2012

19. S. Brivio, G. Tallarida, D. Perego, D. Deleruyelle, S. Franz, Ch. Muller, and S. Spiga, ”Low power resistive switching Au/NiO/Au nanowire arrays”, Appl. Phys. Lett. 101, 223510 (2012)

20. S. Spiga, R. Rao, L. Lamagna, C. Wiemer, G. Congedo, A. Lamperti, A. Molle, M. Fanciulli, F. Palma, F. Irrera, “Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode, J. Appl. Phys. 112, 014107 ( 2012)



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21. Sabina Spiga, Francesco Driussi, Alessio Lamperti, Gabriele Congedo, Olivier Salicio , "Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories" , Applied Physics Express 5, 021102 (2012)

22. L. Lamagna, A. Molle, C. Wiemer, S. Spiga, C. Grazianetti, G. Congedo, M. Fanciulli , "Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As" , J. Electrochem. Soc. 159, H220 (2012)

23. L. Lamagna, C. Wiemer, M. Perego, S. Spiga, J. Rodríguez, D. Santiago Coll, M.-E. Grillo, S. Klejna, S.D. Elliott, “Substrate-enhanced growth during the early stages of atomic layer deposition of alumina onto silicon nitride surfaces”, Chemistry of Materials 24, 1080-1090 (2012)

24. E. Cianci, A. Lamperti, G. Congedo and S. Spiga, “Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects” ECS Journal of Solid State Science and Technology 1, vol. 1, P5-P10 (2012)

25. C. Grazianetti, A. Molle, G. Tallarida, S. Spiga, M. Fanciulli, “Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces”. J. of Phys. Chem. C 116, 18746-18751 (2012)

26. F. Nardi, D. Deleruyelle, S. Spiga, C. Muller, B. Bouteille and D. Ielmini,” Switching nanoscale filaments in NiO by conductive atomic force microscopy, J. Appl. Phys. 112, 064310 (2012)

2011

27. A. Lamperti, L. Lamgna, G. Congedo, and S. Spiga, “Cubic/tetragonal phase stabilization in high-k ZrO2 thin films grown using O3-based atomic layer deposition”, J. Electrochem. Soc., Volume 158, Issue 10, pp. G221-G226 (2011)

28. F. Nardi, C. Cagli, S. Spiga, D. Ielmini, “Reset instability in pulsed-operated unipolar resistive switching memory”, IEEE Electron Device Letters 32, 719 (2011)

29. G. Congedo, A. Lamperti, L. Lamagna, and S. Spiga, “Stack engineering of TANOS charge-trap Flash memory cell using high-k ZrO2 grown by ALD as charge trapping layer”, Microelectronic Engineering 88, 1174 (2011).

30. D. Ielmini, S. Spiga, F. Nardi, C. Cagli, A. Lamperti, E. Cianci, M. Fanciulli, “Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices”, J. Appl. Phys. 109, 034506 (2011)

31. A. Molle, L. Lamagna, C. Grazianetti, G. Brammertz, C. Merckling, M. Caymax, S. Spiga, M. Fanciulli , "Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition" , Appl. Phys. Lett. 99, 193505 (2011)

32. Alessandro Molle, Luca Lamagna, Claudia Wiemer, Sabina Spiga, Marco Fanciulli, Clement Merckling, Guy Brammertz, and Matty Caymax, Improved performances of In0.53Ga0.47As-based metal-oxide-semiconductor capacitors with Al:ZrO2 gate dielectric grown by atomic layer deposition, Appl. Phys. Express 4, 094103 (2011)

33. Ch. Muller, D. Deleruyelle, R. Müller, M. Thomas, A. Demolliens, Ch. Turquat, and S. Spiga, “Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer”, Solid State Electronics 56, 168-174 (2011)

34. D. Deleruyelle, C. Dumas, M. Carmona, C. Muller, S. Spiga, M. Fanciulli, “Direct observation at nanoscale of resistance switching in NiO layers by conductive-atomic force microscopy”, Applied Physics Express 4, 051101 (2011)

35. C. Dumas, D. Deleruyelle, A. Demolliens,C. Muller, S. Spiga, E.Cianci, M. Fanciulli, I. Tortorelli, R. Bez, “Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom Electrodes”, Thin Solid Fims 519, 3798-3803 (2011)

36. F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, D. J. Wouters, “Control of filament size and reduction of reset current below 10 µA in NiO resistance switching memories”, Solid State Electronics 58, 42 (2011)

37. A. Lamperti, E. Cianci, U. Russo, S. Spiga, O. Salicio, G. Congedo, M. Fanciulli, “Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack”, J. Vac. Sci. Technol. B 29, 01AE03 (2011)

38. G. Congedo, S. Spiga, U. Russo, A. Lamperti, O. Salicio, E. Cianci, M. Fanciulli, “Evaluation of DyScOx as an alternative blocking dielectric in TANOS memories with Si3N4 or Si-rich SiN charge trapping layers”, J. Vac. Sci. Technol. B 29, 01AE04 (2011)

39. L. Lamagna, M. Fusi, S. Spiga, M. Fanciulli, G. Brammertz, C. Merckling, M. Meuris, A. Molle, “Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As Substrates”, Microelectronic Engineering 88, 431 - 434 (2011)

40. M. Fusi, L. Lamagna, S. Spiga, M. Fanciulli, G. Brammertz, C. Merckling, M. Meuris and A. Molle, “Al2O3 stacks on In0.53Ga0.47As substrates: in situ investigation of the interface”, Microelectronic Engineering 88, 435 - 439 (2011)

2010



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41. C. Wiemer, L. Lamagna, S. Baldovino, M. Perego, S. Schamm-Chardon, P. E. Coulon, O. Salicio, G. Congedo, S. Spiga, M. Fanciulli, "Dielectric properties of Er−doped HfO2 (Er 15%) grown by atomic layer deposition for high-k gate stacks", Applied Physics Letters 96, 182901 (2010)

42. A. Molle, S. Baldovino, S. Spiga, M. Fanciulli, "High permittivity materials for oxide gate stacks in Ge-based metal oxide semiconductor capacitors", Thin Solid Films, Volume 518, Issue 6, Supplement 1, S96-S103 (2010)

43. A. Molle, L. Lamagna, S. Spiga, M. Fanciulli, G. Brammertz, M. Meuris, "Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks" Thin Solid Films, Volume 518, Issue 6, Supplement 1, S123-S127 (2010)

44. A. V. Zenkevicha, Yu. Yu. Lebedinskiia, Yu. A. Matveeva, N. S. Barantseva, Yu. A. Voronova, A. V. Sogoyana, V. N. Nevolina, V. I. Chichkov, S. Spiga, and M. Fanciulli, “Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics”, Russian Microelectronics, 2010, Vol. 39, pp. 165–174.ù

2009

45. Ugo Russo, Carlo Cagli, Sabina Spiga, Elena Cianci, Daniele Ielmini, "Impact of Electrode Materials on Resistive-Switching Memory Programming", IEEE Electron Device Letters 30, 817-819 (2009)

46. A. Molle, G. Brammertz, L. Lamagna, M. Fanciulli, M. Meuris, S. Spiga, "Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs, In0.15Ga0.85As) substrates", Appl. Phys. Lett. 95, 023507 (2009)

47. Robert Müller, Christoph Krebs, Ludovic Goux, Dirk J. Wouters, Jan Genoe, Paul Heremans, Sabina Spiga, Marco Fanciulli, "Bipolar Resistive Electrical Switching of CuTCNQ Memories Incorporating a Dedicated Switching Layer", IEEE Electron Device Letters, 30, 620-622 (2009)

48. G. Congedo, S. Spiga, L. Lamagna, A. Lamperti, Yu. Lebedinskii, Yu. Matveyev, A. Zenkevich, P. Chernykh, M. Fanciulli, "Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(100)", Microelectronic Eng. 86, 1696-1699 (2009)

49. A. Zenkevich, Y. Lebedinskii, Y. Matveyev, S. Spiga, L. Lamagna, M. Fanciulli, "Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS", Microelectr. Eng. 86, 1777-1779 (2009)

2008

50. S. Spiga, A. Lamperti, C. Wiemer, M. Perego, E. Cianci, G. Tallarida, H. L. Lu, M. Alia, F. G. Volpe, M. Fanciulli, "Resistance switching in amorphous and crystalline binary oxides grown by electron beam and atomic layer deposition", Microelectronic Engineering 85, 2414 (2008)

51. A. Lamperti, S. Spiga, H.L. Lu, C. Wiemer, M. Perego, E. Cianci, M. Alia, M. Fanciulli, "Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)", Microelectronic Engineering 85, 2425 (2008).

52. H.L. Lu, G. Scarel, C. Wiemer, M. Perego, S. Spiga, M. Fanciulli, G. Pavia, "Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors", Journal of The Electrochemical Society 155, H807–H811 (2008)

53. A. Molle, S. Spiga, M. N. K. Bhuiyan, G. Tallarida, M. Perego, C. Wiemer, M. Fanciulli, "Atomic oxygen assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices ", Materials Science in Semiconductor Processing 11, 236-240 (2008)

54. A. Molle, S. Spiga, A. Andreozzi, M.Fanciulli, G. Brammertz, M. Meuris, "Structure and interface bonding of GeO2/Ge/ In0.15Ga0.85As heterostructures", Appl. Phys. Lett. 93, 133504 (2008)

55. A. Molle, S. Spiga, Marco Fanciulli, "Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition", J. Chem. Phys. 129, 011104 (2008)

2007

56. G. Seguini, M. Perego, S. Spiga, M. Fanciulli, A. Dimoulas, "Conduction band offset of HfO2 on GaAs", Appl. Phys. Lett. 91, 192902 (2007)

57. G. Scarel, A.Debernardi, D.Tsoutsou, S.Spiga, S.C.Capelli, L.Lamagna, S.N.Volkos,, M.Alia, M.Fanciulli, "Vibrational and electrical properties of hexagonal La2O3 films", Appl. Phys. Lett. 91, 102901 (2007)

58. S. Baldovino, S. Spiga, G. Scarel, M. Fanciulli, "Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition", Appl. Phys. Lett. 91, 172905 (2007)

59. S. Spiga, C. Wiemer, G. Scarel, O. Costa, and M. Fanciulli “Electrical characterization of rare earth oxides grown by atomic layer deposition”, in Rare earth oxide thin films: Growth, characterization, and applications, Topics in Applied Physics Vol. 106, 203-223 (2007), Eds. M. Fanciulli and G. Scarel, Springer-Verlag (2007)

60. A. Zenkevich, Y. Lebedinskii, S. Spiga, C. Wiemer, G. Scarel, M. Fanciulli, "Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si", Microelectron. Engineer. 84, 2263 (2007)

61. Dimoulas, D.P. Brunco, S. Ferrari, J.W. Seo, Y. Panayiotatos, A. Sotiropoulos, T. Conard, M. Caymax, S. Spiga, M. Fanciulli, Ch. Dieker, E. K. Evangelou, S. Galata, M. Houssa, M. M. Heyns, “Interface Engineering for Ge MOS devices” , Thin Solid Films 515, 6337 (2007)



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2006-1998

62. M. Caymax, S. Van Elshocht, M. Houssa, A. Delabie, T. Conard, M. Meuris, M. M. Heyns, A. Dimoulas, S. Spiga, M. Fanciulli, J.W. Seo, L.V. Goncharova, “HfO2 as gate dielectrics on Ge: Interfaces and deposition techniques”, Mat. Sci. Eng. B 135, 256 (2006)

63. S. Ferrari, S. Spiga, C. Wiemer, M. Fanciulli, A. Dimoulas, “Germanium diffusion during HfO2 growth on Ge by MBE”, Appl. Phys. Lett. 89, 122906 (2006)

64. G. Scarel, C. Wiemer, G. Tallarida, S. Spiga, G. Seguini, E. Bonera, M. Fanciulli, Y. Lebedinskii, A. Zenkevich, G. Pavia, I. L. Fedushkin, G. K. Fukin, and G. A. Domrachev , “Atomic layer deposition of Lu silicate films using [(Me3Si)2N]3Lu”, J. Electrochem. Soc. 153, F271 (2006)

65. C. M. Compagnoni, A. S. Spinelli, A. Bianchini, A. L. Lacaita, S. Spiga, G. Scarel, C. Wiemer, M. Fanciulli, “Temperature dependence of transient and steady state gate currents in HfO2 capacitors”, Appl. Phys. Lett 89, 103504 (2006)

66. C. M. Compagnoni, A. S. Spinelli, A. Bianchini, A. L. Lacaita, S. Spiga, M. Fanciulli, “Characterization of transient currents in HfO2 capacitors in the short timescale”, Microelectronic Engeneering 83, 1927 (2006)

67. G. Seguini, S. Spiga, E. Bonera, M. Fanciulli, A. Reyes Huamantinco, C. J. Först, C. R. Ashman, P. E. Blöchl, A. Dimoulas, and G. Mavrou, “Band alignment at the La2Hf2O7/(001)Si interface”, Appl. Phys. Lett. 88, 202903 (2006).

68. R. Mantovan, S. Spiga, M. Fanciulli, “Low temperature CEMS of Sn-implanted SiO2”, Hyperfine Interactions 165, 69 (2005).

69. S. Spiga, C. Wiemer, G. Tallarida, G. Scarel, S. Ferrari, G. Seguini, M. Fanciulli, “Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge”, Appl. Phys. Lett., 87, 112904 (2005).

70. M. Malvestuto, R. Carboni, F. Boscherini, F. D’Acapito, S. Spiga, M. Fanciulli, A. Dimoulas, G. Vellianitis, and G. Mavrou, “X-ray absorption study of the growth of Y2O3 on Si(001)”, Phys. Rev. B 71, 075318 (2005)

71. S. Kremmer, H. Wurmbauer, C. Teichert, G. Tallarida, S. Spiga, C. Wiemer, M. Fanciulli, “Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy”- J. Appl. Phys. 97, 074315 (2005)

72. G. Scarel, E. Bonera, C. Wiemer, G. Tallarida, S. Spiga, M. Fanciulli, I.L. Fedushkin, H. Schumann, Yu. Lebedinskii, A. Zenkevich, “Atomic-layer deposition of Lu2O3”, Appl. Phys. Lett. 85, 630 (2004)

73. G. Seguini, E. Bonera, S. Spiga, G. Scarel, and M. Fanciulli, “Energy-band diagram of metal/Lu2O3/silicon structures”, Appl. Phys. Lett. 85, 5316 (2004)

74. G. Scarel, S. Spiga, C. Wiemer, G. Tallarida, S. Ferrari, and M. Fanciulli, “Trends of structural and electrical properties in atomic layer deposited HfO2 films”, Mat. Sci. and Eng. B 109, 11 ( 2004).

75. S. Spiga, C. Wiemer, G. Tallarida, M. Fanciulli, M. Malvestito, F. Boscherini, F. d’Acapito, A. Dimoulas, G. Vellianitis, G. Mavrou, “Structural characterization of epitaxial Y2O3 on Si(001) and of the Y2O3/Si interface”, Mat. Sci. and Eng. B 109, 47 (2004)

76. S. Spiga, R. Mantovan, M. Fanciulli, N. Ferretti, F. Boscherini, F. D’Acapito, B. Schmidt, R. Grötzschel, “Local structure of Sn implanted in SiO2 films” –Phys. Rev. B 68, 205419 ( 2003).

77. S. Spiga, M. Fanciulli, N. Ferretti, F. Boscherini, F. D’Acapito, G. Ciatto, B. Schmidt, “Formation and structure of Sn nanoclusters in thin SiO2 films”- Nucl. Instr. and Meth. B 200, 171 (2003)

78. D. T. Dekadjevi, C. Wiemer, S. Spiga, S. Ferrari, M. Fanciulli, G. Pavia, “Grazing incidence x-ray studies of Sb nanocrystals formed in SiO2 by ion implantation” – Appl. Phys. Lett. 83, 2148 (2003)

79. M. Perego, S. Ferrari, S. Spiga, E. Bonera, M. Fanciulli, “TOF-SIMS study of silicon nanoclusters embedded in thin oxide layers” – Appl. Phys Lett. 82, 121 (2003)

80. G. Scarel, S. Ferrari, S. Spiga, G. Tallarida, C. Wiemer, M. Fanciulli, “Effects of growth temperature on the properties of ALD grown ZrO2 films”, J. Vac. Sci. Techn. A 21, 1359 (2003)

81. M. Perego, S. Ferrari, S. Spiga, M. Fanciulli “Nanocrystal depth profiling by means of Cs+ in negative polarity with dual beam TOF-SIMS”, - Applied Surface Science 203-204, 110 (2003)

82. C. Wiemer, D.T. Dekadjevi, S. Spiga, M. Fanciulli, “Grazing incidence x-ray study of Sb nanocrystal formation”, Acta Crystallographica A58 (Supplement), C186 (2002)

83. S. Ferrari, D.T. Dekadjevi, S. Spiga, G. Tallarida, C. Wiemer, and M. Fanciulli, “Structural and electrical characterization of ALCVD ZrO2 thin film on silicon”, J. of Non-Cryst. Solids 303, 29 (2002)

84. F. Cazzaniga, G. Pavia, A. Sabbadini, S. Spiga, G. Queirolo, “AFM measurement of grain size in polycrystalline titanium silicides” – Microel. Engin. 55, 93 (2001)

85. S. Spiga, A. Castaldini, a. Cavallini, M. L. Polignano, F. Cazzaniga, “Denuded zone and diffusion length investigation by EBIC technique in intrinsically gettered Czochralski silicon” - J. Appl. Phys. 85, 1395 ( 1999)

86. S. Spiga, A. Castaldini, A. Cavallini, M.L. Polignano - “Ebic characterization of oxygen precipitation and denuded zone in intrinsically gettered P-type Czochralski silicon” - Solid State Phenomena Vol. 63-64, 13-24 (1998)



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87. S. Spiga, G. Tallarida, A. Borghesi, A. Sassella, G. De Santi, “Annealing effects on silicon rich oxide films studied by spectroscopic ellipsometry” - Thin Solid Film 325, 36-41 (1998)

Book’s chapter

88. Sabina Spiga, Takeshi Yanagida, Tomoji Kawai, “Bottom‐Up Approaches for Resistive Switching Memories”, Chapter 23 (pp 661-694) in Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications, ed. Wiley‐VCH Verlag GmbH & Co. KGaA (2016); DOI: 10.1002/9783527680870.ch23

89. Ludovix Goux and Sabina Spiga, “Unipolar Resistive‐Switching Mechanisms”, Chapter 13 (pp 363-394) in Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications, ed. Wiley‐VCH Verlag GmbH & Co. KGaA 2016 (Print ISBN: 9783527334179, Online ISBN: 97835276808702016); DOI: DOI: 10.1002/9783527680870.ch13

90. S. Spiga, C. Wiemer, G. Scarel, G. Seguini, M. Fanciulli, A. Zenkevich and Yu. Lebedinskii, “Physical, chemical and electrical characterization of high-k dielectrics on Ge and GaAs”, in Advanced Gate Stacks on High Mobility Semiconductors, Springer Series in Advanced Microelectronics Vol.27, 181-202 (2008) edited by A. Dimoulas, E. Gusev, P. C. McIntyre and M. Heyns, Springer-Verlag (2008)

Proceedings of International Conferences

91. E Covi, S Brivo, A Serb, T Prodromakis, M Fanciulli, and S Spiga, “HfO2-based memristors for neuromorphic applications”, proceedings of the IEEE Internatyional Symposium Circuits and Systems (ISCAS) 2016

92. Dalibor Biolek, Sandro Carrara, Elisabetta Chicca, Fernando Corinto, Julius Georgiou, Bernabé Linares-Barranco, Themis Prodromakis, Sabina Spiga, Ronald Tetzlaff, “EU COST Action IC1401–Pushing the Frontiers of Memristive Devices to Systems”, proceedings of the Melecon 2016 Conference,April 18 - 20, 2016, Limassol, Cyprus (2016)

93. S. Brivio, E. Covi, A. Serb, T. Prodromakis, M. Fanciulli, and S. Spiga, “Gradual set dynamics in HfO2-based memristor driven by sub-threshold voltage pulses”, proceedings of the Memristive Systems (MEMRISYS) 2015 International Conference (2015)

94. Spiga S, Brivio S, Tallarida G, Perego D, Franz S, Deleruyelle D, Muller C, “Resistive switching in NiO based nanowire array for low power RERAM”. In: J. Heber, D. Schlom, Y. Tokura, R. Waser, M. Wuttig. Technical Digest of Frontiers in Electronics Materials, edited by J. Heber, D. Schlom, Y. Tokura, R. Waser, M. Wuttig (Wiley VCH, Germany,2012). p. 242-243, ISBN: 978-3-527-41191-7 (2012)

95. A. Molle, E. Cianci, A. Lamperti, C. Wiemer, S. Baldovino, L. Lamagna, S. Spiga, M. Fanciulli, G. Brammertz, C. Caymax, "Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M=Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates" , ECS Transactions 50, 11-19 (2012)

96. A. Molle, S. Baldovino, L. Lamagn, S. Spiga, A. Lamperti, M. Fanciulli, , D. Tsoutsou, E. Golias, A. Dimoulas ,G. Brammertz, C. Merckling, M. Caymax, “Active Trap Determination at the Interface of Ge and In0.53Ga0.47As Substrates with Dielectric Layers”, ECS Transaction 41, 203 (2011)

97. F. Nardi, C. Cagli, D. Ielmini, S. Spiga, “Reset current reduction and set-reset instabilities in unipolar NiO ReRAM”, in: IEEE IMW INTERNATIONAL MEMORY WORKSHOP Tech. Dig., 2011.

98. L. Lamagna, A. Molle, C. Wiemer, S. Spiga, C. Grazianetti, and M. Fanciulli, “Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates”, ECS Transaction 35(3), 431-440 (2011)

99. S. Spiga, G. Congedo, U. Russo, A. Lamperti, O. Salicio, F. Driussi, E. Vianello, Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories, Proceedings of the IEEE-Solid-State Device Research Conference - ESSDERC 2010, p. 408-411, 2010

100. A. Molle, G. Brammertz, L. Lamagna, S. Spiga, M. Meuris, M. Fanciulli, "Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substrates", MRS Proceedings 1194E, 1194-A08-10 (2010)

101. G. Tallarida, N. Huby, S. Spiga, M. Arcari, G. Csaba, P. Lugli, A. Redaelli, R. Bez, “ZnO-based selectors for crossbar non-volatile memories”, Proceedings of E\PCOS 2010, September 6th-7th, 2010 Milano, Italy

102. F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, D. J. Wouters, Sub-10 µA reset in NiO-based resistive switching memory (RRAM) cells, in: IEEE IMW INTERNATIONAL MEMORY WORKSHOP Tech. Dig., 2010. (doi: 10.1109/IMW.2010.5488317)

103. S. Spiga, A. Lamperti, E. Cianci, F. G. Volpe, and M. Fanciulli, "Transition Metal Binary Oxides for ReRAM Applications", ECS Transactions 25(6) (2009) 411-425

104. G. Tallarida, N. Huby, B. Kutrzeba-Kotowska, S. Spiga, M. Arcari, G. Csaba, P. Lugli, A. Redaelli, R. Bez, Low temperature rectifying junctions for crossbar non-volatile memory devices, in: IEEE IMW NTERNATIONAL MEMORY WORKSHOP Tech. Dig., 2009, pages 6-8



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105. C. Dumas, D. Deleruyelle, G. Micolau, A. Demolliens, Ch. Muller, S. Spiga, E. Cianci, M. Fanciulli, I. Tortorelli, R. Bez, "Performances of resistive switching NiO films deposited on top of W or Cu pillar bottom electrode" Proceedings of the NVMTS 2009, 10th annual Non Volatile Memory Technology Symposium, Portland, USA, October 2009

106. A. Demolliens, Ch. Muller, D. Deleruyelle, S. Spiga, E. Cianci, M. Fanciulli, F. Nardi, C. Cagli, D. Ielmini, "Reliability of NiO-based resistive switching memory (RRAM) elements with pillar W bottom electrode", IEEE Proceedings of International Memory Workshop (IMW, Monterey, USA, May 2009), p. 25-27, 2009.

107. D. Ielmini, F. Nardi, A. Vigani, E. Cianci and S. Spiga, "Read-disturb limited reliability of multilevel NiO-based resistive-switching memory" Proceedings of the IEEE Semiconductor Interface Specialist Conference (SISC), Arlington, VA, Dec. 3-5, 2009.

108. U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, M. Fanciulli, “Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM”, IEDM Tech. Dig, pp. 775-778, 2007

109. C. M. Compagnoni, A. S. Spinelli, A. Bianchini, A. L. Lacaita, S. Spiga, and M. Fanciulli, “Transient currents in HfO2 and their impact on circuit and memory applications”, IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS 2006, pp.124-126 (2006)

110. M. Alessandri, R.Piagge, S.Alberici, E.Bellandi, M.Caniatti, G.Ghidini, A. Modelli, G.Pavia, E. Ravizza, A.Sebastiani, C.Wiemer, S. Spiga, M.Fanciulli, E. Cadelano, G. M. Lopez, V.Fiorentini, “High-k materials in Flash memories”, ECS Transactions 1, issue 5, pp. 91-105 (2005)

111. M. Fanciulli, S. Spiga, G. Scarel, C. Wiemer, G. Seguini, G. Tallarida, “Structural and Electrical Properties of HfO2 Films Grown by Atomic Layer Deposition on Si, Ge, GaAs and GaN”, Mat. Res. Mat. Res. Soc. Symp. Vol 786, E6.14 (2004).

112. G. Tallarida, S. Spiga, M. Fanciulli, “Scanning capacitance force microscopy and Kelvin probe force microscopy of nanostructures embedded in SiO2”, Proceedings of NATO ASI ( 2004)

113. G. Tallarida, S. Spiga, M. Fanciulli, “Characterization of Nanocrystals by Scanning Capacitance Force Microscopy”, Mat. Res. Soc. Symp. Vol. 738, G5.1.1. (2003)

114. D. Caputo, F. Irrera, S. Salerno, S. Spiga, M. Fanciulli, “Reliability of ZrO2 films grown by atomic layer deposition”, Proceedings of the 4th European Workshop of Ulitmate Integration of Silicon (ULIS2003), March 20-21 (2003), Udine, Italy

115. S. Spiga, S. Ferrari, M. Fanciulli, B. Schmidt, K.-H. Heinig, R. Grötzschel, A. Mücklich, G. Pavia, “Kinetics of ion beam synthesis of Sn and Sb clusters in SiO2 layers”, Mat. Res. Soc. Symp. Vol. 647, O.11.23 (2001)

116. M.L. Polignano, M. Brambilla, F. Cazzaniga, G. Pavia, F. Zanderigo, S. Spiga, L. Moro, A. Castaldini, A. Cavallini - “Evaluating the denuded zone depth by measurements of the recombination activity of bulk defects” - Mat. Res. Soc. Symp. 510, 569 (1998)

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