energy distribution in hostileenergy distribution in ...servel/apollo/icattp_2011_citterio.pdf ·...

Energy Distribution in HostileEnergy Distribution in Hostile Environment:

Power Converters and Devices

Mauro CitterioMauro Citterioon behalf of the INFN-APOLLO project

Mauro Citterio ICATPP Como – 10/4/2011 1

INDEXINDEX

• The ATLAS LAr Calorimeter System …. a test case

• The Proposed Power Distribution for an Upgraded LArSystem

• Characteristics of Power MOSFETs under irradiation

• - exposed to ionizing radiation (gamma 60Co)75• - exposed to heavy ions (75Br at 155 MeV)

• - exposed to protons (216 MeV)

• Conclusions


The ATLAS experiment

LA b l l i tLAr barrel calorimeter

The power distribution and conversion scheme


in the detector area

ATLAS Experiment: Lar Barrel CalorimeterDetails of the Front End Electronics and Main Power Converter

The required qualification doses for this application are:

4.5 x 104 rad and 2 x 1012 particles/cm2 (> 20 MeV)


4.5 x 10 rad and 2 x 10 particles/cm2 ( 20 MeV)

Ten times higher for Hi-LHC scenario (70 safety factor)!!!

ATLAS Experiment: Present StatusLAr Calorimeter Front-End Board (FEB) Power Distribution

19 LDO regulators/FEB19 LDO regulators/FEB


Proposed Power Supply Distribution Scheme for a LAr Upgrade

CRATECard #3

MORE INFO TAKE A LOOKAT THE DEDICATED POSTER !!!

280 Vdc

POLLDO Converter

POLLDO

Card #2

POLLDO Converter

Card #1

MainDC/DC

Converter

POLConverter

POLLDO Converter

POLLDO Converter

POLniPOLConverter

POLniPOL

POLLDO Converter

POLConverter

POLniPOL Converter

Regulated DC bus

O CPOL Converter with high step-down ratioCharacteristics:• Main isolated converter with N+1 redundancy


y• High DC bus voltage (12V or other)• Distributed Non-Isolated Point of Load Converters (niPOL) with high step-down ratio

The Main ConverterCritical Elements for a LAr Upgrades

QC+

The Point of Load

S S L

Q

Q4T

1C

C4 L

Vou+

C TiL+

S1

S2

S4

L1

C RC

Uin Uo

+

U+

Q

3 oVin

t-3

C2

3

iTT+

4 Co

RC1 L

2

-UC

1-

Q1

22

C1

T2

T2

4

+Vout = 12V

S3 D<50% Uo = UinD/2

Switched In Line Converter SILC

- Required Mosfet Voltage

POL Specifications:Input voltage: Ug = 12 VOutput voltage: U = 2 5 VBreakdown: ~ 200 Volt or higher

- Mosfets, diodes and controller must be qualified against radiation

Output voltage: Uo = 2.5 VOutput current: Io = 3AOperating frequency: fs = 1 MHz


be qualified against radiation 350 nH air core inductors

Power Mosfets exposed to gamma rays

Devices under test:

30V STP80NF03L 0430V STP80NF03L-04

30V LR7843

200V IRF630

For each type of device 20 samples were tested, 5 for each dose value

200V IRF630 (tested at the ENEA Calliope Test Facility)

Used doses:Measurements :

Breakdown Voltage @ VGS=-10VI 1600 Gray

II 3200 Gray

Breakdown Voltage @ VGS 10V

Threshold Voltage @ VDS=5V

ON Characteristic @ VGS=10V

III 5890 Gray

IV 9600 Gray

@

Gate Leakage @ VDS=10V


y

30 V Mosfet: STP80NF03L-04


30 V Mosfet: LR7843


200 V Mosfet: IRF630


Mosfet Exposed to Heavy Ions.The SEE frameworkThe SEE framework

Destructive Single Event Effects in Power MOSFETS (tested at INFN Catania)GateSource GateSource

(tested at INFN Catania)

N+P

_

Body

N+ N+P

_

Body

N+

P +

P N

P +

P N

N_ N_

N + N +


Drain Drain

Single Event Burnout Single Event Gate Rupture

The SEE experimental set-upThe IGSS evolution during irradiation

1 0

-0.5

0

e C

urre

nt [

μ A ]

g

0 500 1000 1500 2000-2.0

-1.5

-1.0

Ti [ ]

Gat

e Le

akag

e

Parameter AnalyzerGateSource

1 MΩ1 MΩ

Vgs VdsTime [s]

N+

P _

Body

N+

Cg

Cd

50 Ω

50 ΩImpacting Ion DUT

15

The current pulses

P+

50 Ω

5

1

5

Cur

rent

[mA

]

N+

N_

20 40 60 80 100 120

0

Time [ns]


Fast Sampling OscilloscopeDrain

The SEE analysis

1.5

0

TIME DOMAIN WAVEFORMS SCATTER PLOT

1

1.5

0

0.5

1

Cur

rent

[mA

]

20 40 60 80 100 120

0

0.5

1

Time [ns]

2.5

x 1011

14

164.5

5x 1010

1

1.5

2

50 100 1508

10

12

14

Cha

rge

[pC

]

2

2.5

3

3.5

4

0 10 30 400

0.5

1

Charge [pC]

50 100 150Vds [V]

Vds

10 20 30 40 10 20 30 40

0.5

1

1.5

Charge [pC]


Charge [pC] Charge [pC]

MEAN CHARGE vs BIAS VOLTAGE Γ-LIKE DISTRIBUTION FUNCTION

The SEE experimental resultsp

200 V Mosfet: IRF630

Devise TID Bias Conditions during Irradiation

Drain Damage Gate Damage

D21 0Gy Vds=20V-110V vgs=-2V Vds=100V-110V Vds=100V-110VD22 0Gy Vds=20V-120V vgs=-6V Vds=110V-120V Vds=100V-110VD06 1600Gy Vds=20V-70V vgs=-2V Vds=60V-70V Vds=60V-70VD10 3200Gy Vds=20V-50V vgs=-6V Vds=40V-50V Vds=40V-50VD14 5600Gy Vds=20V-55V vgs=-6V Vds=50V-55V Vds=40V-50VD16 5600Gy Vds=20V-50V vgs=-6V Vds=45V-50V Vds=40V-45VD17 9600Gy Vds=20V-45V vgs=-6V Vds=40V-45V Vds=40V-45V


The SEE experimental results

0.3

0.35

0.4D21 0Gy Vds=110V Vgs=-2V

0.1

0.15

0.2

0.25

Cur

rent

[mA

]

0 20 40 60 80 100 120 140 160 180 200

0

0.05

Time [ns]35

D21 0Gy Vds=110V Vgs=-2V

20

25

30

35

A]2 6

2.8

5

10

15

20

Cur

rent

[mA

2.0

2.2

2.4

2.6

rge

[pC

]

0 20 40 60 80 100 120 140 160 180 200

0

Time [ns]1.4

1.6

1.8Cha

r


20 30 40 50 60 70 80 90 100Vds [V]

The SEE experimental resultsScatter-plot Vds=50V

100

120

D21 0GyD10 3200GyD14 5600G

40

60

80

rrent

[ μA

]

D14 5600GyD17 9600Gy

0

20

40

Cur

0 20 40 60 80 100 120 140 160 180 200-20Time [ns]


Mosfet Exposed to ProtonsSEB characterization

Characterization requires that an SEB circumvention method be utilized

SEB characterization produces a cross-sectional area curve as a function of LET for a fixed VDS

SEB characterization

SEB characterization produces a cross-sectional area curve as a function of LET for a fixed VDS and VGS.

Generally SEB is not sensitive to changes in the gate bias, VGS. However, the VGS bias shall be sufficient to bias the DUT in an “off” state (a few volts below ff ff ( fVTH), allowing for total dose effects that may reduce the VTH.

The only difference in the testThe only difference in the test set-up was that the current probe

was on the Mosfet Source


Mosfet Exposed to Protons

The results are still preliminary. Only the 200V Mosfets (IRF 630, samples from two different manufacturers) were exposed

Proton energy: 216 MeV (facility at Massachusetts General Hospital, Boston)Ionizing Dose: < 30 Krads

A “ b l t ” ti ill i th k ld f th f th M f t di hi h iAn “absolute” cross section will require the knowldege of the area of the Mosfet die which is unknown.

10-7IRF630 - ST

10-7

IRF630 - International Rectifier

10-9

10-8

cm-2

]10-8

m-2

]

10-10

10-9

oss

Sect

ion

[c10-10

10-9

ss S

ectio

n [c

m

10-12

10-11

Cro

10-11

Cro

s


10182 184 186 188 190 192 194 196

VDS [Volt]

10-12

175 180 185 190 190 195

VDS [Volt]

Mosfet Exposed to Protons

The number of SEB events recorded at each VDS was small

Work still in progress ……………..

less then 30 events for the STless than 150 events for the IR devices

Large statistical errors affect the measurements

The cross section at VDS = 150 V (“de rated” operating voltage) can not beThe cross section at VDS = 150 V ( de-rated operating voltage) can not be properly estimated

Dependence from manufacturer“Knee” not well definedKnee not well defined

• To effectively qualify the devices for 10 years of operation at Hi-LHC, the cross section has to be of the order of 10-17/ cm2 which puts the failure rate atcross section has to be of the order of 10 / cm , which puts the failure rate at <1 for 10 years of operation

P t i di ti i ith i d fl d l


• Proton irradiation campaigns with increased fluences and more samples are planned.

Conclusions

Distributed Power Architecture has been proposedMain converter (SILC topology)( p gy)Point of load converter (IBDV topology)

Critical selcction of components to proper withstand radiationCritical selcction of components to proper withstand radiationController, Driver and IsolatorFPGA for overall monitoringMOSFETSMOSFETS

MOSFETS, both for main converter and POL have been selected and testedGGamma rayHeavy ionsProtons

Some results are encouraging, however more systematic validation is on-goingNovel devices based on SiC and GaN, are also under investigation


g

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