elg 4126 – dgdrhabash/dgd6_winter_2015.pdfwinter 2015 outline of this dgd • quiz 2 will be on...
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ELG 4126 – DGD
Sustainable Electrical Power Systems
Winter 2015
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Outline of this DGD
• Quiz 2 will be on March 16th
– 15-25 min long
– 5% of your grade
– Based on the last two DGDs
• Review from the last DGD
• Solar cells theory
– Semiconductors
– Bandgap impact on solar cell efficiency
– p-n junction
– p-n junction as a solar cell
– Current-voltage characteristics of a solar cell
ELG 4126 – V. Tatsiankou 2March 2, 2015
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The effect of the atmosphere
3March 2, 2015
About 33% of AM0 irradiance is absorbed by the earth’s atmosphere.
ELG 4126 – V. Tatsiankou
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The effect of the atmosphere
4March 2, 2015 ELG 4126 – V. Tatsiankou
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Semiconductors
• Solar cells use semiconductors to convert light into electricity.
• The most popular semiconductor is silicon (Si).
• Si has 14 electrons orbiting its nucleus, which consists of 14 protons.
• Si has 4 electrons invalence band.
• Si atom forms 4 covalentbonds with other Si atoms to form a molecule.
ELG 4126 – V. Tatsiankou 5March 2, 2015
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Semiconductors
• If the electrons in the valence band are promoted to the conduction band – current flow is possible.
• At room temperature the thermal energy can promoted an electron to the conduction band.
• For Si only 1 in 1010 electrons are located in the
conduction band at room temperature (poor conductor).
ELG 4126 – V. Tatsiankou 6March 2, 2015
Bandgap = Conduction band energy –
Valence band energy
Bandgap for Si = 1.12 eV
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Bandgap impact on solar cells
• In solar cells, the photon gives its energy to an electron which is promoted to the conduction band (current flow).
• The photon must have the energy greater than a bandgap to excite the electron.
• The difference in bandgaps between the semiconductor materials determine what photons or wavelengths that material can absorb!
ELG 4126 – V. Tatsiankou 7March 2, 2015
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Bandgap impact on solar cells
ELG 4126 – V. Tatsiankou 8March 2, 2015
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Bandgap impact on solar cells
ELG 4126 – V. Tatsiankou 9March 2, 2015
For a blackbody spectrum at 6000 K
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A p-n junction
• p-n junction is a basic building block of a solar cell.
• It is formed by joining p-type and n-type materials together.
• A p-type semiconductor is created by introducing dopants or impurities to a semiconductor, typically from group III elements, such as boron atoms (holes are the majority carriers).
• A n-type semiconductor is created by introducing dopants or impurities to a semiconductor, typically from group V elements, such as phosphorus atoms (electrons are the majority carriers).
ELG 4126 – V. Tatsiankou 10March 2, 2015
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Unbiased p-n junction
ELG 4126 – V. Tatsiankou 11March 2, 2015
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A p-n junction at equilibrium
ELG 4126 – V. Tatsiankou 12March 2, 2015
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A p-n junction as solar cell
ELG 4126 – V. Tatsiankou 13March 2, 2015
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Solar cell IV curves
• Diode equation
• Ideal solar cell IV curve
• Non-ideal solar cell IV curve
ELG 4126 – V. Tatsiankou 14March 2, 2015
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Solar cell IV curves
• Solar cell equivalent circuit
ELG 4126 – V. Tatsiankou 15March 2, 2015
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Solar cell IV curves
ELG 4126 – V. Tatsiankou 16March 2, 2015
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Temperature effect
ELG 4126 – V. Tatsiankou 17March 2, 2015
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Irradiance effect
ELG 4126 – V. Tatsiankou 18March 2, 2015
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Parallel resistance effect
ELG 4126 – V. Tatsiankou 19March 2, 2015
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Series resistance effect
ELG 4126 – V. Tatsiankou 20March 2, 2015
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Questions
DGD - ELG 4126