electrostatic discharge susceptibility data dtic · 2011-05-15 · variation in the test results. a...

1 ELECTROSTATICDISCHARGESUSCEPTIBILITYDATA DTIC9! " E CTEi 8 Nov 0 6 1989

Volume I

R~e~liabli Ansos puCenter

l Reliability Analysis Center

The information and data contained herein have been compiled from

government and nongovernment technical reports and from materialsuppneo by various manufacturers and are intended to be used forreference purposes. Neither the United States Government nor lIT

Research Institute warrant the accuracy of this information and data. The

user is further cautioned that the data contained herein may not be used inlieu of other contractuallv cited references and specifications.

Publication of this information is not an expression of the opinion of The

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promotional purposes of this information in conjunction with the name ofThe United States Government or lIT Research Institute without written

permission is expressly prohibited.

Ordering No. VZAP-2

ELECTROSTA TICDISCHARGE

SUSCEPTIBILITY DATAOF

MICROCIRCUITDEVICES V Accesto Fo"Volume I NTS RAM. -

DTIC 1A13 [

1989 Jb ', o

Prepared by: b ".

A\,a!. " Ior

William H. Crowell Dist

Reliability Analysis Center

Under contract to:

Rome Air Development CenterGriffis AFB, NY 13441-5700

Reliability Analysis Center

The Reliability Analysis Centcr (RAC) is a Department of Defense Information Analysis Centersponsored by the Defense Logistics Agency, managed by the Rome Air Development Center (RADC), andoperated at RADC by lIT Research Institute (IITRI). RAC is chartered to collect, analyze and disseminatereliability information pertaining to systems and parts used therein. The present scope includes integratedcircuits, hybrids, discrete semiconductors, microwave devices, optoelectronics and nonelectronic partsemployed in military, space and commercial applications. In addition to data collection and analysisattributes. RAC is also chartered as being a center for all aspects of reliability engineering and relateddisciplines including: Reliability, Testability, Statistical Process Control, Electrostatic Discharge, and TotalQuality Management.

Data is collected on a continuous basis from a broad range of sources, including testing laboratories,device md equipment manufacturers, government laboratories and equipment users (government and non-,government). Automatic distribution lists, voluntary data submittals and field failure reporting systemssupplement an intensive data solicitation program.

Reliability data and analysis documents covering most of the device types mentioned above areavailable from the RAC. Also, RAC provides reliability consulting, training, technical and bibliographicinquir-y services which are discussed at the end of this document.

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Electrostatic Discharge Susceptibility Data12. PERSONAL AUTHOR(S)

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FIELD GROUP SUB-GROUP Electrostatic Discharge (ESD)Electrostatic Discharge Sensitive (ESDS)Integrated Circuits; Discrete Semiconductor

19. ABSTRACT (Continue on reverse if necessary and identify by block number)

This publictaion contains Electrostatic Discharge (ESD) susceptibility data ofelectronic devices and is an update to the VZAP-1, the 1983 RAC ESD data compendium.Detailed susceptibility data is presented along with the ESD classification inaccordance with MIL-HDBK-263 and MIL-STD-1686A for approximately 4,300 devices.This data is useful in the establishment of an ESD control program. The datacontained in this publication is a product of the Reliability Analysis Center'sVZAP data base, which is intended to be a central repository of ESD SusceptibilityData.

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0 UNCLASSIFIED/UNLIMITED 0 SAME AS RPT 0 DTIC USERS

22a NAME OF RFSPONSIBLE INDIVIDIUAL 22b TELEPHONE (Include Area Code) 22c OFFICE SYMBOL

Steven J. Flint, RAC Technical Director (315) 337-0900oD Fnrrn 1473, JIN 86 P... - ,; 'd itic)satc ubsoi~lE IOIT'Y LASSIr4(.&I r r arc -,oue

Jii

PREFACE

The purpose of this document is to make available electrostatic discharge (ESD) susceptibility

test and classification data. This data is much needed by industry and government equipment

designers to enable them to assess their equipments' vulnerability to the ESD thrcat, to assist in the

establishment of ESD control programs, and to comply with such requirements as MIL-STD-

1686A, "Electrostatic Discharge Control Program for Protection of Electrical and Electronic Parts

Assemblies and Equipment (Excluding Electrically Initiated Explosives Devices)."

This document was prepared as part of the Reliability Analysis Center's efforts to provide its

user community with new and needcd information in the field of electronic device reliability.

Contributing to this effort were William Denson, David Mahar, John Puleo and Shawn

Gentile.

V

TABLE OF CONTENTS

Pag~e

SECTION 1.0 INTRODUCTION 11.0 INTRODUCTION 3

1.1 BACKGROUND 3

1.2 USE OF THIS DATA 3

1.3 INTERPRETATION OF DATA 7

1.4 CONVERSION OF EMP OVERSTRESS TST DATA 9

TO THE ESD HUMAN BODY MODEL

1.5 VARIABILITY ASSOCIATED WITH CONVENTIONAL 11

TEST METHODS

1.6 SUMMARY AND CONCLUSIONS 12

SECTION 2.0 FAILURE VOLTAGE PROFILE 15

2.1 SUSCEPTIBILITY OF VARIOUS TECHNOLOGIES 17

2.2 SUMMARIZED DATA - VOLTAGE VS. TECHNOLOGY 342.3 PERCENTAGE OF FAILURES PER TECHNOLOGY 35

SECTION 3.0 DETAILED DEVICE SUSCEPTIBILITY TEST DATA 393.1 MICROCIRCUIT SUSCEPTIBILITY TEST DATA 55

3.2 DISCRETE SEMICONDUCTOR SUSCEPTIBILITY 373

TEST DATA (Volume II)

3.3 PASSIVE COMPONENT SUSCEPTIBILITY TEST DATA 519

(Volume II)

SECTION 4.0 PART NUMBER INDEX (Volume 11) 533

SECTION 5.0 DATA SOURCES (Volume 11) 559

SECTION 6.0 REFERENCES (Volume II) 581

APPENDICES (VOLUME II)

APPENDIX A DERIVATION OF DATA CONVERSION FORMULA 589APPENDIX B REPORTING SENSITIVITY DATA 595

* DEFINITION OF VZAP TEST PARAMETERS 599

APPENDIX C ADDITIONAL RAC SERVICES 603

vii

LIST OF TABLESPag~e

TABLE 1 PERCENTAGE OF FAILURE RECORDS PER TECHNOLOGY-IC 37

TABLE 2 PERCENTAGE OF FAILURE RECORDS PER 38

CIRCUIT TYPE-DISCRETE

TABLE 3 MANUFACTURER LISTING 43

TABLE 4 FAILURE CRITERIA LISTING 44

TABLE 5 TEST REMARKS LISTING 47

TABLE 6 GENERAL REMARKS LISTING 53

TABLE 7 DATA ITEM DESCRIPTION DI-RELI-80670 (Volume II) 597

TABLE 8 VZAP TEST PARAMETERS (Volume 11) 601

LIST OF FIGURES

FIGURE 1 EMP VS. ESD DATA COMPARISON 10

FIGURE 2 FAILURE DISTRIBUTION FOR TESTER #1 13

FIGURE 3 FAILURE DISTRIBUTION FOR TESTER #2 13

FIGURE 4 STEP-STRESS RESULTS FOR 74F04 14

FIGURE 5 STEP-STRESS RESULTS FOR 74F175 14

FIGURE 6 FAILURE VOLTAGE PROFILE-TITL 19

FIGURE 7 FAILURE VOLTAGE PROFILE-STI'L 19

FIGURE 8 FAILURE VOLTAGE PROFILE-LTITL 20

FIGURE 9 FAILURE VOLTAGE PROFILE-HT'TL 20

FIGURE 10 FAILURE VOLTAGE PROFILE-LSTIL 21

FIGURE I 1 FAILURE VOLTAGE PROFILE-ADVANCED STTL & LSTTL 21

FIGURE 12 FAILURE VOLTAGE PROFILE-MOS 22

FIGURE 13 FAILURE VOLTAGE PROFILE-NMOS 22

FIGURE 14 FAILURE VOLTAGE PROFILE-CMOS 23

FIGURE 15 FAILURE VOLTAGE PROFILE-HMOS 23

FIGURE 16 FAILURE VOLTAGE PROFILE WET 24

FIGURE 17 FAILURE VOLTAGE PROFILE-BIFET 24

FIGURE 18 FAILURE VOLTAGE PROFILE-ALL TITL 25

FIGURE 19 FAILURE VOLTAGE PROFILE-ALL MICROCIRCUIT 25

FIGURE 20 FAILURE VOLTAGE PROFILE-BIPOLAR AND IlL 26

FIGURE 21 FAILURE VOLTAGE PROFILE-BIPOLAR AND MOS 26

vii

LIST OF FIGURES (CONT'D)

FIGURE 22 FAILURE VOLTAGE PROFILE-ALL FET 27

FIGURE 23 FAILURE VOLTAGE PROFILE-ALL MOS 27

FIGURE 24 FAILURE VOLTAGE PROFILE-SMALL SIGNAL DIODE 28

FIGURE 25 FAILURE VOLTAGE PROFILE-RECTIFIER 28

FIGURE 26 FAILURE VOLTAGE PROFILE-ZENER 29

FIGURE 27 FAILURE VOLTAGE PROFILE-MICROWAVE DIODE 29

FIGURE 28 FAILURE VOLTAGE PROFILE-JUNCTION FET 30

FIGURE 29 FAILURE VOLTAGE PROFILE-MOS FET 30

FIGURE 30 FAILURE VOLTAGE PROFILE-LOW POWER TRANSISTOR 31

FIGURE 31 FAILURE VOLTAGE PROFILE-HIGH POWER TRANSISTOR 31

FIGURE 32 FAILURE VOLTAGE PROFILE-MICROWAVE TRANSISTOR 32

FIGURE 33 FAILURE VOLTAGE PROFILE-FIELD EFFECT TRANSISTOR 32

FIGURE 34 FAILURE VOLTAGE PROFILE-THYRISTOR 33

FIGURE 35 FAILURE VOLTAGE PROFILE-OPTOELECTRONIC DEVICE 33

ix

SECTION 1.0

INTRODUCTION

i ii i P2

1.0 INTRODUCTION

This databook makes available ESD susceptibility test data that the RAC has collected from a

variety of sources over the past few years on integrated circuits, discrete semiconductors and

resistors.

The introductory material of this publication is not intended to provide a tutorial on ESD

testing or the physics of ESD failures, but rather to provide enough information to allow the user

of this document to effectively interpret the presented data. This information will also give the user

some insight into the usefulness and limitations of the data.

1.1 BACKGROUND

When VZAP- 1 was published in 1983, ESD was a relatively immature field with a serious

lack of standardization, especially in the area of ESD susceptibility testing. Much of the VZAP-1

data was taken wi:-, non-standard ESD simulator circuits that deviated from the use of a 100 pF,1500 ohm discharge model. Additionally, it was discovered subsequent to VZAP-1 that many of

these simulators, either commercially available or built in-house, have low degrees of repeatability,

due to many uncontrolled variables. Although many of the reasons for this nonrepeatability havebeen studied, understood, and corrected, there potentially still exists sources for large degrees ofvariation in the test results. A discussion of typical variability that exist in test results is given in

Section 1.5

VZAP-2 is intended to be an update to VZAP-1. and presents more data of higher quality.

These improvements are possible because much has been learned in the field of electrostatic

discharge since VZAP-1 was issued.

1.2 USEOFTHIS DATA

MIL-STD-1686A covers the requirements for the establishment and implementation of an

ESD control program, including identification of ESD Sensitive (ESDS) parts, assemblies, and

equipments. Any organization that designs, tests, inspects, services, manufacturers, processes,

assembles, installs, packages, labels, or otherwise handles electronic parts, assemblies, and

equipment susceptible to ESD damage should consider implementation of an ESD control program.

3

The first consideration in establishing an ESD control program in a specific application is the

identification of the susceptibility levels of the specific parts being used. This is true whether the

program is being implemented as a result of MIL-STD- I 686A or not. Based on this information,

an effective program can then be designed and implemented without expensive overkill.

MIL-STD-1686A, Paragraph 5.2 states, "The contractor shall identify each ESD Sensitive

(ESDS) part, assembly, and equipment applicable to the contract as Class I or 2." In some cases

Class 3 parts must also be identified. Paragraph 5.2.1.1 further states "ESD sensitivity

classification for parts shall be determined as follows:

(a) ESD sensitivity as specified in the applicable part specification, or

(b) ESD sensitivity in accordance with Appendix A test data contained in the Reliability

Analysis Center (RAC) ESD Sensitive Items List (ESDSIL), or

(c) Classified in accordance with Appendix B, or,

(d) When specified, or at the option of the contractor, determine sensitivity by test (See

Appendix A). ESD sensitivity test data reporting shall be in accordance with the data

ordering document included in the contract or order (See 6.2)."

The data contained in this databook is essentially a compilation of ESD test data taken from a

wide variety of sources. The ESDSIL database referred to in item (b) above is entitled the

"Electrostatic Discharge Sensitive Items List." The intent of the ESDSIL database is to be a central

repository of data taken as a result of the requirements of MIL-STD-1686A and Data Item

Description (DID-RELI-80670). The classification test procedure of MIL-STD- 1686A, Appendix

A, requires the use of the test circuit of MIL-STD-883, Method 3015. At the time MIL-STD-

1686A was issued the MIL-STD-883 test method in effect was Method 3015.6. Since there is no

data in this publication which resulted from testing as required by Method 3015.6 or later, the data

contained herein does not fulfill the requirements of (b) above.

However, the data in this publication is more desirable than the use of (c) above which

generically classifies components based on part type. Since 3015.6 was the first MIL-STD-883

ESD test method to ensure reasonable confidence in test waveform characteristics, it is the most

desirable test data available. The data types, in order of preference, can be summarized as follows:

4

1) MIL-STD-883, Method 3015.6 or later

2) MIL-STD-883, Method 3015.5 or earlier, or other 100pF, 1500 ohm Human BodyModel (HBM) tests, such as DOD-STD-1686

3) Non 100pF, 1500 ohm HBM tests converted to an ESD susceptibility level consistent

with the 100 pF, 1500 ohm model

4) Electromagnetic Pulse (EMP) data converted to an ESD susceptibility level.

The data contained in this document are from items 2, 3 and 4. This is also the order of

preference which was used in determining the ESD classification of each part listed.

A more detailed description of the test method used for each data entry is given in the remarks

field of Section 3 and also in Section 5 (Volume II) of this document.

Before the updates of DOD-STD-1686 to MIL-STD-1686A and MIL-STD-883 Method

3015.5 to 3015.6, there were inconsistencies between DOD-STD-1686 and the MIL-STD-883

method of reporting ESD test results. Specifically, the voltage susceptibility ranges were different,making it impossible to cross-correlate test data. Both MIL-STD-1686A and MIL-STD-883,Method 3015.6 have been coordinated, thereby making data taken from either useable for eitherpurpose. In fact MIL-STD-1686A invokes the procedure of MIL-STD-883 Method 3015.6. The

classification ranges in these documents are as follows:

Class 1 0-1999

Class 2 2000-3999

Class 3 4000-15999

This is the classification scheme that is used in this publication. In addition to these, RAC

has defined Class N to mean devices susceptible to levels above 15999 volts.

Since much of the data in this publication was obtained from tests performed not in

accordance with MIL-STD- 1686A or MIL-STD-883, classification in accordance with thesestandards becomes difficult. For example, if testing was performed that yielded devices passing a

test at 1000 volts but failing the test at 3000, although it is known that the susceptibility level is1000-3000 volts, the MIL-STD-1686A classification cannot be precisely determined. In this

example it is not known whether the device is Class I or 2. The classification criteria used in this

publication was to use the lowest failure voltage or the highest voltage at which the device passed if

5

no failure data existed. For example, if a device was observed to fail when tested at 2000 volts

only, it was classified as Class 1 since the actual threshold voltage is between 1 and 2000 volts.

As stated previously, all data present in this document was not taken from specific test

methods, such as method 3015 of MIL-STD-883 but rather from a variety of test methods.

Contained in this document are the results of tests done in accordance with MIL-STD-883, test

method 3015; tests similar to MIL-STD-883 Method 3015 but not strictly in accordance with it;

tests using nonstandard simulation models and methods; and EMP data that was converted to

reflect ESD susceptibility levels. The EMP data was only used for classification purposes in the

cases in which there was no other empirical ESD susceptibility data. The methodology used to

convert EMP data to ESD susceptibility levels is given in Section 1.5.

In future revisions to this publication, it will be interesting to note the differences in ESD

susceptibility data between Method 3015.6 and earlier versions in which the waveform was not

tightly controlled. However, in general data taken from circuits in which the high frequency (i.e.

> 100 MHz) performance has not been characterized will lower failure thresholds. This potential

exists due to the fact that there can exist high frequency, high amplitude oscillations in some

circuits which yield higher stressing amplitudes than that of the ideal RC discharge waveform.

Additionally, there is a limited amount of Charged Device Model (CDM) test results. Even

though CDM tests are not yet incorporated into the ESD testing standards, there has been some

data included which were taken using this model. Although the device classification schemes are

only applicable for the HBM, the CDM data that was available is included for completeness,

considering that conventional classifications with CDM data cannot be done.

Individuals or firms testing devices for ESD susceptibility are encouraged to submit the

resulting data to the Reliability Analysis Center for inclusion into the database. If desired, the

source of data will be held proprietary by RAC. This data does not need to be taken in accordance

with the MIL-STD-883 test method, but can be any empirical ESD susceptibility data. A

recommended format for this data is given in Appendix B (Volume II). Also given in Appendix B,

for information purposes only, is the Data Item Descriptior (DID) DI-RELI-80670 called out in

MIL-STD- 1686A for submission of ESD sensitivity data.

6

1.3 INTERPRETATION OF DATA

The data contained herein is intended to present the results of empirical tests performed.

Ideally, in addition to voltage susceptibility levels, one would like to know specific failure

mechanisms that caused the device to fail. While manufacturers typically know the manner in

which their part will fail when exposed to an ESD transient, this data is not normally available to

outside organizations. Therefore, the specific failure mechanisms are not known. What is usually

known is the failure mode (that is, the measurable effect of damage), since in any ESD test the:e

must be a means of detecting failure. Examples of typical failure modes (or failure criteria)

included excessive input leakage, input stuck high, functional failure, etc.

The failure criterion used in establishing an ESD failure is critical to the outcome of the

testing. This may be illustrated by the use of two examples. In the first example, let us assume

that the failure criterion for a bipolar device is defined as a certain percentage change in leakage

current. This may be a difficult failure criterion to implement, because the relationship of leakage

current versus stress voltage itself is not well-defined. In the second example, let us assume that

the leakage current specification limits are used as the failure criterion for the same parts. The

device which we are testing is relatively tolerant to ESD and remains within the specification limits

when stressed with a pulse well below the damage threshold. Nevertheless, there is a measurable

change in the leakage current, i.e., the device has been degraded; however, it does not exceed the

specification until it is subsequently pulsed with a much higher energy pulse. Since we know that

some degradation has occurred, we can measure the degradation, but, because of the failure

criterion, the device is not considered susceptible to ESD damage at the lower level. For this

reason, the criterion used to detect device failure must also be selected in accordance with the

device operating characteristics and the manner in which the device is designed into a circuit; that

is, if a certain circuit configuration can tolerate a parameter shift or even an out-of-specification

condition of this component. Since it is impractical to require unique failure criteria based on the

manner in which the part is used in the circuit, MIL-STD-883, Method 3015.6 states the devices

shall be tested for failure following stressing by performing room temperature DC parametric and

functional tests. Performing both parametric and functional tests should identify any degradation

or failure of the device.

It is also recognized that failure modes and mechanisms are highly dependent on the

simulation circuit used to stress the device. There are various circuits being used in industry to

simulate different ESD scenarios. The most standard of these is the Human Body Model, in which

a charged capacitance is discharged through a resistor to the device under test. This Human Body

7

Model is the most commonly used simulation model and is specified in MIL-STD-1686A and MIL-

STD-883 Method 3015. The resistance and capacitance values specified in these standards are 100pF and 1500 ohms, respectively. Other values are often used and some data in this publication use

these values. The values used are listed in the detailed data (Section 3.0). It should be noted that

devices can exhibit different susceptibility characteristics depending on the values used. Since

there is a need to classify devices in a consistent manner, the RAC derived a conversion method for

data that was taken using a Human Body Model with resistance and capacitance values other than

100 pF, 1500 ohms.

Using semi-empirical methods, the RAC has established the following formula for the

conversion:

V1 = V2 (3.87) L2

where:

V1 = standard human body model damage threshold

R2 = nonstandard value of resistance used (in ohms)

C2 = nonstandard value of capacitance used (in pF)

V2 = measured damage threshold using C2 and R2

The derivation of this equation may be found in Appendix A.

This method is only used so that a classification in accordance with the susceptibility levels

of MIL-STD-1686A can be made. The data in Section 3.0 presents both the classification of each

part and the data as it was obtained, i.e., the failure voltages of the actual model used during

testing.

Other ESD simulation models sometimes used are the charged device model and the machinemodel. The charged device model simulates the situation in which a device, after being charged,

contacts a conductive object, thereby causing a high amplitude, short duration discharge pulse.

The machine model simulates a situation in which a device is contacted with a charged capacitance

through a very low resistance. This model is intended to simulate a conductive object, like parts of

a machine, that contact the device.

The purpose of this book is not to provide background on the physics of ESD failures, as

this has been done extensively in the literature, but rather to present the data collected by RAC and

give the reader enough information so that the limitations of the data are fully understood. If

8

further information is required, DOD-HDBK-263, "Electrostatic Discharge Control tand .k fr

the Protection of Electrical and Electronic Parts, Assemblies, and Equipment (Exchmling

Electrically Initiated Explosive Devices)" and the proceedings of the Annual f()SLSI)

Symposium provide much information on all aspects of ESD.

1.4 CONVERSION OF EMP OVERSTRESS TEST DATA TO THE ESD

HUMAN BODY MODEL

A vast amount of electrical overstress data has been compiled from Electromagnceti Pillse

(EMP) studies. It would be negligent to disregard this potential data source. By knowing cetmin

parameters of a device, a theoretical ESD failure can be calculated using the Wunsch-tell moelC]

(Reference 28) as the starting point. The following equation has been established to convert FMP

overstress data to the ESD human body model equivalent:

V 2VD + / 4VD 2 + 1200 K1 (7.675 x 10-7) - K2 1530 + VD60150+V

where:

V = ESD threshold voltageVD = measured overstress breakdown voltage

K1 = failure constant 1

K2 = failure constant 2

The derivation of this equation may be found in Appendix A (Volume II).

To further verify the validity of the calculated ESD levels presented in this book, data was

compared for specific devices which had both empirical ESD threshold data and ESD threshold

levels calculated from EMP data. The log of the ratio of ESD to EMP failure voltages was plotted

such that a given percentage of discrepancy (i.e., if the EMP level was the same percentage higher

or lower than the ESD level) would be equidistant from the 0 line. Figure 1 is a histogramEMP

illustrating the relationship between the log (E ) and frequency of occurrence. If the datapoints

were randomly distributed about the 0 line and the data did not show a shift in distribution against

any parameter, it could be concluded that the failure levels obtained from EMP data were a fairly

good indication of the actual susceptibility levels of the devices (not taking into account random

9

variations and noise in the data for any given device). Analysis of this data however, indicated thatEMP

the log (t ) datapoints were not randomly distributed but rather correlated to the susceptibility

level. This indicates that the conversion algorithm is not perfectly accurate.

6

5 -

._9 4

3-

2

Ii

-1.0 -.9 -.8 -.7 -.6 -.5 -.4 -.3 -.2 -. 1 0 .1 .2 .3 .4 .5 .6 .7 .8 .9 1.0

Log ( EMPESD

FIGURE 1: EMP VS. ESD DATA

Based on this information it should be emphasized that the ESD susceptibility levels obtained

from EMP data are necessarily only approximate values. It can be seen from Figure 1 that the

EMP to ESD levels can differ by as much as a factor of 10. There are various sources of error in

converting EMP data to ESD data. Two of these error sources are the uncertainty in the damage

constants and the uncertainty in the device parameters (bulk resistance and breakdown voltage).

These uncertainties can stem from normal lot to lot variations and differences among

manufacturers. Additionally, it is known that damage from EMP test pulses may manifest itself

as different failure mechanisms than damage from an ESD pulse. This is due to the fact that an

ESD pulse may be a shorter duration, higher current pulse relative to an EMP event. These

variations can easily cause a factor of 10 difference in the susceptibility levels. For this reason.

EMP data is used in this publication for classification purposes only in those cases where ESD data

10

is not available. The EMP data is identified as such in the remarks field (field no. 18) of the

detailed data section.

1.5 VARIABILITY ASSOCIATED WITH CONVENTIONAL TEST METHIODS

Since ESD testing began, it has been recognized that there was a certain degree of variability

in test results due to the test apparatus itself. These variations were attributed to:

• Arcing of the high voltage switching relay.• Errors in calibration of the test voltages.• Leakage of the capacitor.• Parasitic inductances and capacitances.• Inconsistencies in the criteria used to detect failure.

• Incomplete characterization of worst case pin combinations.

Conventional ESD simulators probably effectively simulate a real ESD event from a charged

person or object, since a real ESD would have many of the parasitic R, L, and C values similar to

that of the simulator (Reference 8). The problem is, however, that the discharge waveformproduced is uncontrolled and cannot be used to obtain repeatable results.

To illustrate the repeatability of tests using a conventional circuit, Figures 2 and 3 present the

data RAC has taken from two different conventional ESD simulators. A sampling of 74LS08

devices were obtained of the same date code, attempting to minimize variations in the device under

test population. The most susceptible pin was found by step stressing a small sample of devices

on each pin until failure. Failures were detected with a curve tracer indicating a change in reverse

breakdown voltage characteristics between the pin under test and the substrate of the device.

Once the most susceptible pin was found, a sampling of 30 devices were step stressed to

failure on this pin for each of the two simulators. Voltage step increments of 25 volts were used to

maximize the resolution of failure voltage distributions. The intent of the study was to:

(1) Determine the failure voltage distribution of a typical device stressed with a

conventional test apparatus.

(2) Identify differences in these distributions between two typical simulators.

11

Another study (Reference 26) with similar objectives yielded even a higher degree of

variability. In this study, a sampling of 74F04 and 74F175 devices were tested by three

independent test labs. Figures 4 and 5 summarize these results.

These results were taken when ESD testing technology was less mature and testers were

being built with little regard for the subtleties involved in making an accurate and repeatable test

circuit. Since the data contained in this publication was obtained from a variety of testers, it is

apparent that this inherent variability is present in it.

In addition to the inherent variation in test apparatus and devices themselves, there can also

exist large variations between manufacturers. This is due to the fact that each manufacturer

employs their own unique methodologies and circuitry to protect devices, each with their own

protection capability. If the manufacturer was known, it is reported in the detailed data section of

this publication.

1.6 SUMMARY AND CONCLUSIONS

This publication presents the most comprehensive compendium of electrostatic discharge

susceptibility test data currently available. This data is useful (and mandated by MIL-STD-1686A)

for the establishment of ESD control procedures based on the susceptibility of devices being

handled, assembled, stored, etc. It is important for the users of this information to understand the

limitations of the data contained herein. To accomplish this, previous discussions have addressed

the different types of data included in this publication as well as the variation inherent in it.

RAC also strongly encourages any one performing ESD susceptibility tests to submit the

results of those tests to RAC for inclusion in the database and dissemination in future editions of

this publication. If tests are performed in accordance with MIL-STD-1686A, the results are

required to be submitted to RAC as outlined in the Data Item Description DI-RELI-80670 (given in

Appendix B, Volume II). Also, given in Appendix B is a format for submitting data if not done in

accordance with a specific test method.

12

TESTER # 1co1

C) C) C

LCD

1 ti ,(, 15) ;2 450 2750 3050 330 3610 J3950 4250

S 300 C100 2900 3200 3 50) 3600 4100

FAILURE VOLTAGI"

FIGURE 2: FAILURE DISTRIBUTION FOR TESTER #1

TESTER #2

C ,-

4 .

f3

1650 2150 2450 2750 3050 33b0 365,0 3950 4250

2000 2300 2600 2900 3200 3500 3000 4100

FAILURE VOLTAGE

FIGURE 3: FAILURE DISTRIBUTION FOR TESTER #2

13

STEP STRESS TEST RESULTSFOR 74F04

70()

CDC- TESTER &1

I T.StEH &2

TESTER *3!100

C) a , a Ca Ca C> C> Ca-'0 *t -'at ... :7 *I~

a400

C3a Ca

S) 300

9 11 13

PIN NUMBER

FIGURE 4: STEP-STRESS RESULTS FOR 74F04

STEP STRESS TEST RESULTS

4 (a 00FOR 74F175 1C>

4 TESTER # 1

TESTER *'2

........ TESTER *3C>C>

Ca Ca

or)Ca CaO O • O i,3 Oa2000

CDa

<D lln4 5 g 12 13

PIN NUMBER

FIGURE 5: STEP-STRESS RESULTS FOR 74FI75

14

. . = i l I Ca

SECTION 2.0

FAILURE VOLTAGE PROFILE

15

2.1 SUSCEPTIBILITIES OF VARIOUS TECHNOLOGIES

The relative susceptibilities of various technologies can be seen from the following

histograms (Figure 6 through 35). Cases where there are large peaks in the histogram are

indicative of a particular data source or test method. For example, the peaks at 1000-1499 volts for

CMOS, 2000-2499 volts for TTL, 1000-1499 volts for STTL, etc., were primarily from data

contained in Source Code 030 (Section 5.0). However, when observing the histogram (Figure 19)

for failure voltages of all microcircuit technologies combined, a much larger sample size was

available and a fairly well-defined curve was obtained.

17

FAILURE VOLTAGE PROFILEOF TTL DEVICES

CC ,

Lu

-a

cc

0 -[---

<C1 40- 199 2CC -2-;99 5000-3499 > 4000

9 1500- 99 2--2 99 500 -3999

FAILURE VOLTAGEPe,~Ay4oh.sCe-e-. 1.-e.N~Y, 134-0

FIGURE 6

FAILURE VOLTAGE PROFILEOF STTL DEVICES

cc

-J

co

',I -- 4 1 O - 411- 2 r:00 - 1' ,1 , -7co %(3 O - 3 c) > 4 cc)I !__ "_ I100- 29"!9

FAILURE VOLTAGE

FIGURE 7

19

FAILURE VOLTAGE PROFILEOF LTTL DEVICES

100

cr

40

C 30

20 -- ,o --

u499

-99 1000-149 2000-2499 3000-35499 > =4000

L11

500-999 1500-1999 2500-2999 3500-3599q

FAILURE VOLTrAGE

.... ~~~~elhobility Amolys-s C-et. R - .,Ne Og 3 4

FIGURE 8

FLURE VOLTrAGE PROFILEOF HTT-L [DEVICES

2- 401

C)r

30

20

!0 -

< 49 1000-1499 2000--2409 3000-3499 > =-OO©

5 (--999 1500-1999 25E,0(0- 2 9139 3500-3999

FAILUR E VOLTAGEL ,440

FIGURE 9

20

I I • I

FAILURE VOLTAGE PROFILEOF LSTTL DEVICES

220

200 C"-

1(0

CO,

1 20'UI100

C>,

60

40-T

20--

<0499 1 000-1499 2000-2499 3000-3499 > -4 000

500-999 1500-1999 2500-2999 3500-3999

FAILURE VOLTAGE

Rao b;lty A-oys$, C e, . Roe. N- ork 13440

FIGURE 10

FAILURE VOLTAGE PROFILE OFADVANCED STTL & LSTTL DEVICES

350 i

3001

Lu

, 50 T200#

FAILURE VOLTAGE

FIGURE 11

21

~ 0 I 2_-I i " II li

FAILURE VOLTAGE PROFILEOF MOS DEVICES

201

a I -

cc

4.-

SC)00- 1 ,49 20 - 2000 - 349 >=40C

00 - 99 1500-7999 25C,-29q9 3500 - 9 99

FAILURE VOLTAGE

FIGURE 12

FAILURE VOLTAGE PROFILEOF NMOS DEVICES

140]

Lucc

cc

2o(Ico

0L

FAILURE VOLTAGE

FIGURE 13

22

FAILURE VOLTAGE PROFILEOF CMOS DEVICES

1000

Booor

Lu C)GO C,0 I

o I

200990

=49 1000-1499 2000-2499 3000-3499 >=40C0

500-999 1500-1999 2500-2999 3500-3.99

FAILURE VOLTAGE

FIGURE 14

FAILURE VOLTAGE PROFILEOF HMOS DEVICES

300

250

*-j 200--

Sr-

C

> '00-cnoN ,0 04,C

1000-1499 2000-2499 3000-3499

500-999 1500-1999 2500-2999 -3500--4"

FAILURE VOLTAGE

FIGURE 15

23

FAILURE VOLTAGE PROFILEOF JFET DEVICES

6-

-J

500 -99 1500- 199 0-299950- ILL 50

FIGURE 16

FAILURE VOLTAGE PROFILEOF BIFET DEVICES

Io

C>',

C) D

0 1 0 25 29 -35C2 0

FAILURE VOLTAGE

FIGURE 17

24

I Pri I

FAILURE VOLTAGE PROFILE OFALL TTL DEVICES

900

Cr H

CrO

,3 -

<.499 1000-1499 2000-2499 3000-3a99 > -000

500-999 1500-1999 2500-2999 Z500-3999

FAILURE VOLTAGERellibih

t

y A.-ayss Cente, Ro,&. Ne- York 13440

FIGURE 18

FAILURE VOLTAGE PROFILE OFALL MICROCIRCUIT DEVICES

C,o

u- I

0

Cr

a,'

4Q, 0 ,-i

1000-1499 2000-2999 4000-4999 >=6000

500-999 1500-1999 3000-3999 5000-5999

FAILURE VOLTAGE

FIGURE 19

25

FAILURE VOLTAGE PROFILEOF BIPOLAR & IlL DEVICES

a)

6000

UjL. I

3La4

L u

1000 -1499 2000-2999 4000-4999

9 -- 100-1999 -3000-3999 5000-599

FAILURE VOLTAGERei ob ,ly A..Olys, S e r Po . tw o.. 13440

FIGURE 20

FAILURE VOLTAGE PROFILE OFBIPOLAR AND MOS DEVICES

I 2400

(--

Lu

L4J

a) :a ;co

a ' 21 a --- -

FAILURE VOLTAGE

FIGURE 21

26

FAILURE VOLTAGE PROFILE OFFET [DEVICES

FAILURE VO>LT7AGE

FIGURE 22

FAILURE VOLTAG3E PROFILE OFALL MOS DEVICES

c:)

FAI LURE VOL r AC3K:

FIGURE 23

27

FAILURE VOLTAGE PROFILEOF SMALL SIGNAL DIODES

C)

cr

C3

FAILURE VOLTAGE

FIGURE 24

FAILURE VOL-[AGE PROFILEOF RECTIFIER DIODES

firco

, L :O- _C -~. 1 " >= 16000

FAILURE VOLTAGE

FIGURE 25

28

FAILURE VOLTAGE PROFILEOF ZENER DIODES

C)

FAILURE VOLTAGE

FIGURE 26

FAILURE VOLTAGE PROFILE OFMICROWAVE DIODES

co

FAILURE VOLTAGE

FIGURE 27

29

FAILURE VOLTAGE PROFILE OFJUNCTION FETS

¢3

Cu-J

cc

co0

1 ,9 99 Z:,C -999 ,-OOC-15999 > i 6COO-

FAILURE VOLTAGE

FIGURE 28

FAILURE VOLTAGE PROFILEOF MOS FET DEVICES

UZCm

0

FAILURE VOLTAGE

FIGURE 29

30

FAILURE VOLTrAGE PROFILEOF LOW POWER TrRANSISTO(RS

3-423

C-

U3m

0 r -~z ~ SCI - 99 9 >~=~

FAILURE VOLTAGE

FIGURE 30

FAIUREVOLAGE PROFILEOF HIGH POWERTRNIOS

57

CC

cn

Lu

C) -

FAILURE VOLTAGE

FIGURE 31

31

FAILURE VOLTG PROFILEO7F MICROWAVE TrRANSISTORS

cc)

rAIL-URE VOLTAGE

FIGURE 32

FAILUE VOLAGE POFIL

FAILURE VOL-TAGE PROFIL-EO:F -THYRISTOCRS

c/:)

FAL R CU-A3

FALRLU:LrCE R:FL

LUJCt)

Sico

FZAILURE VOLTAGE

FIGURE 34

FAILUE VOLAGE POFIL

2.2 SUMMARIZED DATA - VOLTAGE VS. TECHNOLOGY

The data in this section was generated from the failure voltages of each entry in the Detailed

Device Susceptibility Test Data of Section 3.0. Where necessary, the actual test voltages were

converted to levels consistent with the widely recognized 100 pF, 1500 ohm human body model

since mixing failure voltages of data obtained with different resistor-capacitor values and different

discharge models would confound the data significantly. This data conversion methodology was

discussed in Section 1.4.

It should be noted that data was also included which represents an approximate upper bound

of threshold voltages (i.e., one test at one voltage was carried out on a device and a failure

resulted). Thus, although exact damage threshold voltage of the device could not be determined

from that one data point, it is known that the threshold is equal to or less than the test voltage.

The data as presented in this section may be somewhat biased since all data entries from the

detailed data section were used. This bias comes from the fact that where one data source may

have included all of the data (on all pins, for example) another may have only presented the worst-

case failures (i.e., the most sensitive pin).

34

2.3 PERCENTAGE OF FAILURES PER TECHNOLOGY

A total of 5,501 device records were categorized during the preparation of this databook.

Table I and 2 summarizes the percentages of each technology family, (integrated circuits and

discrete semiconductors respectively) in each category of ESD classification. Section 3.0 contains

the complete categorization data by part numbers.

35

00~~' 00mr- r

l - :! - c 1 -

ft C14 00 ~ 0r

0O 0N 0 C

-q -c Cl4 0

CIA

M ~CC4 C-

00 Zrt - - C- C - C - C' cn m- C - C

Cl~~~1 00 - l 0 C ' -~ ~ 0

or, N- C C D C - C - NCI~ ' Zt - wl - D 0 e r I~C 0 '0 a

CN - - tr'-Cl 0 - m~ Cl .

Cl W.) 0C-4. 4l' C4 N "l -CC

C- C C- C 4 M- M- %n C - - C- - C- - - C- C4 C

Cl,

-4 C-l N- - 0 N C1

-'' 'o 0 0

z~2 Cl C

- C C C C C C C C C C C C C C C 37C

r-e - O r- -N -nI

- z r

00 r-

00 ON M , r rON1

- 1 1 ~ O m1 r- z:§

O0 0

z m kn \C - -,C

00 00

3-

SECTION 3.0

DETAILED DEVICE SUSCEPTIBILITY TEST DATA

39

0 C

.0r >

C).U

LL. (4.E

0J cc-

-~~c - c -

'.4~0 -I

00 ~-41

- •

- -- ",-

• .. " ,,.0

- "-,0

,v, " )-.. *.- 0 <

- " , ,, -e

:_. . ,.),•" - " -;,i ..=

~o0 2

--i

-

RAC ESD DATABASE

Table 3 -MANUFACTURER LISTING

OGGE MANUFACTURER NAME CODE MANUFACTURER NAME

ALP Alpha Industries MOT Motorola Semi

AM American Microcircuits MPI Micropac Industries

AMD Advanced Micro Devices MSC Microwave Semi Corp

AMP Amperex Electronics MSI Microsystems International

ANA Analog Devices N/R Not Reported

ANZ Anzac Electronics NCR National Cash Register

ATM ATMEL NEC Nippon Electric Company (NEC)

BEC Beckman Instruments NIT Nitron

EE . Bendix NSC National Semi

E- Craven Crystal Ltd. NUC Nucleonic Prod

CEN Centratab PLE Plessey

YLCompcne nt Device Inc. PPC PPC Products

CC Codi Semiccnductar PPI Precision Products Inc.

::Contine-ntal Semi. Inc. PRE Precision Manalithics

C Cypress Semicanductcr RAY Raytheon

A-Dale Etectrcon'ct RCA RCA

CZDynamic Cantrol Carp RI Rockwell Intl (Includes Collins)

Ct Delco ELectronics SCN Semicon:CDickson Etec. Carp. SEM Semtech Corp.-Elec. Transistor Carp. SEN Sensitron Semi.

F -C Fairchild SEC SEED

Genera. Electric SGS SGS ATESGNGeneral Semiconductor SIE Siemans

0: General instruments SIG SigneticsCTL Gilway Technical Lamp 511. Silicon GeneralHAP Harris SIX Siliconix

HAj Hauti~aon SOL SoLitron Devices

ri.W Hewlett Packard SPR Sprague Electric

HiIT Hitachi SSD Solid State Devices

HON Honeywell SSS Solid State ScientificHfB Hybrid Systems. SUP Supertex

HfC Hycamp Inc. SYN Syntron

1'T InternatianaL Device Technolagies TEC Teledyne Crystalanics1: ITT Semiconductor TEK Tektronix

1P.M INMOS TEL Teledyne

CInse~ek TEX Texas Instruments

Intel THC Thermametricsor Intl. Rectifier Carp. TRC Transition ELec. Carp.

!SL Intersil TRW TRWIVT !ntech UDT United Detector Technology

K'% KSC Semiconductor Corp. ULT Ultronix Inc.

LEA Lear S;egler UNI Unitrade

LTC Lirear Tcchnolo qy Co)rp. VAR VariousMAC MACGM VIS Vishay

"AS Micrewaive AooitsWES WestinghouseYCC McCoy Electronic; XIC Xicur

Micrc Pose4r Sy-,ttm,; ZIL Zileg

V,' j onoI h i c IMe r) os

4 3

RAC ESD DATABASE

Table 4 - FAILURE CRITERIA LISTING

CODE FAILURE CRITERIA

1 1 UA LEAKAGE AT 1Ov.

2 1 UA LEAKAGE AT 20V.

3 10 UA INPUT LEAKAGE PREVIOUSLY MEASURED TO BE 1 UA.

4 10% CHANGE IN ELECTRICAL PARAMETERS.

5 10% CHANGE IN LEAKAGE CURRENT.

6 10% PARAMETER CHANGE.

7 110= 4 UA.

8 2 MA LEAKAGE CURRENT OR OPEN CONDUCTOR LINES.

9 2 UA LEAKAGE CURRENT OR OPEN CONDUCTOR LINES.

10 2% CHANGE OF VOUT AT IL= 50UA.

11 20 UA LEAKAGE CURRENT OR OPEN CONDUCTOR LINES.

12 200 NA LEAKAGE CURRENT OR OPEN CONDUCTOR LINES.

13 25% LEAKAGE, luA LEAKAGE, FUNCTION FAILS.

14 50,; DROP IN REVERSE VOLTAGE AT IR= 5UA.

15 50% DROP IN V(BR) CBO AT IB= 5UA.

16 50% DROP IN V(BR) GSS AT IG= 5UA.

17 50% INCREASE IN GATE LEAKAGE CURRENT.

18 A 10% CHANGE IN INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT.

19 A 10% OR > CHANGE IN ANY MEASURED ELECTRICAL PARAMETER WAS CONSIDERED A FAILURE.

20 A 10% OR > INC. IN MEAS. LEAKAGE CURRENT @OR < A VOLT 10% < THE INITIAL BRKDWN VOLT.

21 A CHANCE OF 0.5% OR GREATER TOLERANCE.

22 A SHIFT OF 10% OF INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT.

23 ANY MEASURABLE CHANGE IN AN ELECTRICAL PARAMETER.

24 BVBE AT IR: lOONA.

25 CATASTROPHIC FAILURE (INPUT CURRENT).

26 CATASTPOPHIC.

27 CHANGE IN IGSS.

28 CHANGE IN IIH OF 10.

29 CHANGE IN IIH OF 20NA AT VCC= 5.5V AND VIN= 2.4V.

30 CHANGE IN IIH OF 500% AT VIN= 2.7V.

31 CHANGE IN IIL OF *500% AT VIN= .45V.

32 CHANGE IN IIL OF 500% AT VIN= 5V.

33 CHANGE IN 110 OF 500%.

34 CHANGE IN IL OF +500% AT VIN= 1V.

35 CHANGE IN IR OF +500% AT VBR= 30V.

36 CHANGE IN IR OF +500% AT VR= 50V.

37 CHANGE IN IR OF 500% AT VBR= 1OV.

38 CHANGE IN IR OF 500% AT VR= 35V.

39 CHANGE IN IS OF 500% AT VS= -TOY.

40 CHANGE IN RESISTANCE OF .1%.

41 CHANGE IN RESISTANCE OF 2%.

42 CHANGE IN VOL OF .050V AT VCCz 4.5V,IOL= 2MA AND VIN= 2 0V.

43 CHANGE OF 0.5% OR GREATER TOLERANCE.

44 CHANGED IN IV CHARACTERISTICS WITH INPUTS HIGH.

45 CHECK FOR ANY CHANGE IN FORWARD VOLTAGE AND REVERSE LEAKAGE CURRENT.

46 CUMULATIVE LEAKAGE CURRENT.

47 D.C. PARAMETER OUT OF SPEC.

48 DAMAGE TO INPUT DIODE.

49 DEGRADATION OF V-I CURVE OR FUNCTIONAL FAILURE.

51 DEVICE CONSIDERED ESD SENSITIVE WHEN A 1O%CHANGE IN ELECT. CHAR. WAS OBSERVED.

51 ELECTRICAL PARAMETERS OUT OF SPEC.

52 EXCESSI'E LEAKAGE CURRENT OR OPEN CONDUCTOR LINES.

53 FAILEO THE DC ELECTRICAL PARAMETERS TEST LIMITS.

44

RAC ESD DATABASE

Table 4 - FAILURE CRITERIA LISTING (Cont'd)


54 FAILED VOLTAGE IS THE AVERAGE OF PARTS SAMPLED.

55 FAILS TO MEET ELECTRICAL SPECIFICATION.

56 FUNCTION FAILURE OR D.C. PARAMETER OUT OF SPEC.

57 FUNCTIONAL FAILURE.

58 GATE CURRENT GREATER THAN 5UA AT A GATE/SOURCE VOLTAGE OF 22 VOLTS.

59 GREATER THAN .5UA INPUT AT 1OV.

60 GREATER THAN IuA LEAKAGE CURRENT AT 1.5 VOLTS.

61 GREATER THAN 5uA LEAKAGE CURRENT AT 0.5 VOLTS.

62 ID= SHORT.

63 IDSS OUT OF SPEC.

64 IEB AT VEB= +6V +1000% CHANGE.

65 IEBO AT VEB= -6V +1000% CHANGE.

66 IEBO AT VEB= 2.5V +1000% CHANGE.

67 IEBO AT VEB= 3.5V 1000% CHANGE.

68 IF AC,DC,OR FUNCTIONAL PARAMETERS FAILS THE MIN. OR MAX. LIMITS.

69 IGSS AND V(BR)GSS OUT OF SPEC.

70 IGSS AT VGS= -20V +1000% CHANGE.

71 IGSS OUT OF SPEC.

72 IGSSR >25PA AT VGS= 8V AND VDS= OV.

73 IGSSR AND IDSS OUT OF SPEC.

74 IGSSR AND VGS(TH) OUT OF SPEC.

75 IGSSR OUT OF SPEC.

76 IGSSR,VGS(TH) OR IDSS OUT OF SPEC.

77 IIH AND VR OUT OF SPEC.

78 IIH AND/OR VOL OUT OF SPEC.

79 IIH AND/OR VR OUT OF SPEC.

80 IIH OUT OF SPEC.

81 IIH, IIL, OR ISS OUT OF SPEC AT VDD=15V.

82 IIH,IIL,ISS OUT OF SPEC.

83 IIH,IIL,OR ISS OUT OF SPEC.

84 IIH,VF,OR VR OUT OF SPEC.

85 IIH= lOMA.

86 IIH= 16MA.

87 IIH= 97UA.

88 IIL OUT OF SPEC.

89 IL AT VR= .5V 300%.

90 IL AT VR= 50V +1000% CHANGE.

91 INPUT BREAKDOWN OF 5MV.

92 INPUT SHORTED TO VCC.

93 INPUTS SHORTED TO GROUND.

9. IR AND VB OUT OF SPEC.

95 IR GREATER THAN 100% CHANGE.

96 IR OUT OF SPEC.

97 IR= 300UA AT 50 VOLTS.

98 IZ AT VR= 5V +1000% CHANGE.

99 IZ AT VR= 6.5V +1000% CHANGE.

100 LEAKAGE CURRENT.

101 LIGHT OUTPUT DEGRADAIION AT CONSTANT CURRENT.

102 N/R.

103 PARAMETER CHANGE OF GREATER THAN 10%.

104 PARAMETER SHIFT OF GREATER THAN 10%.

105 PASSED FUNCTIONALLY OR DC ELECTRICAL PARAMETERS.

106 RESISTANCE CHANGE OF 1%.

45

RAC ESD DATABASE

Table 4 - FAILURE CRITERIA LISTING (Cont'd)


107 RESISTANCE OUT OF SPEC.

108 SIGNIFICANT AMOUNT OF DEGRADATION TO V-I CURVE.

109 SIGNIFICANT CHANGE IN THE +INPUT -GROUND V-I CURVE.

110 STUDY OF BREAKDOWN CHARACTERISTIC OF INPUT AND OUTPUT PINS.

111 TEST LEAKAGE CURRENT.

112 TESTED TO 2000 VOLTS PER METHOD 3015.2 OF MIL-STD-883.113 V(BR)GSS OUT OF SPEC.

114 VB OUT OF SPEC.

115 VEBO= IV. TYPICALLY 5 VOLTS.

116 VGS(OFF) OUT OF SPEC AND IGSSR >25PA AT VGS= 8V AND VDS= OV.

117 VGS(OFF) OUT OF SPEC AND/OR IGSSR >2SPA AT VGS= 8V AND VDS= OV.

118 VGS(OFF) OUT OF SPEC AT VDS= 15V AND ID= 50UA.

119 VGS(TH) AND ISS OUT OF SPEC.

120 VGS(TH) OUT OF SPEC.

121 VR OUT OF SPEC.

122 WHEN ONE PULSE RESULTED IN DECREASE REV. LEAKAGE OR DECREASE IN JUNC. BRKDWN. VOLT.

123 WHEN ONE PULSE RESULTED IN INCREASE REV. LEAKAGE OR DECREASE IN JUNC. BRKDWN. VOLT.

46

RAC ESD DATABASE

Table 5 - TEST REMARKS LISTING

CODE TEST REMARKS

1 1-DEV. IR SHORT, 3-100% CHANGE, 1-25% CHANGE, 5- NO CHANGE. 5 PULSES FWD & REV.

2 1.13M OHM MODEL.

3 1.1M OHM MODEL.

4 1.21M OHM MODEL.

5 1.58M OHM MOOEL.

6 1.69M OHM MODEL.

7 1.78M OHM MODEL.

8 10 MHZ CRYSTAL OSCILLATOR.9 10 OHM MODEL.

10 10000 VOLTS IS AN AVERAGE OF AN UNKNOWN NUMBER OF DEVICES.

11 107 OHM MODEL.

12 11.8 OHM MODEL.

13 12 MHZ CRYSTAL OSCILLATOR.

14 133K OHM MODEL.

15 1400 VOLTS IS AN AVERAGE OF 3 DEVICES.

16 140K OHM MODEL.


18 150K OHM MODEL.





23 IM OHM MODEL.

24 2 DEVICES INCREASED IR FROM .09, .095 TO .85, .65uA. 5 PULSES FWD & REVERSE.

25 2 OUT OF 9 DEVICES TESTED FAILED.

26 2.1M OHM MODEL.

27 2.49M OHM MODEL.

28 2.6% OF TOTAL NUMBER OF PINS FAILED.

29 2.94M OHM MODEL.

30 20.5 OHM MODEL.

31 220 OHM MODEL.

32 232K OHM MODEL.

33 24.9 OHM MODEL.

34 240K OHM MODEL.

35 250 OHM MODEL.

36 250K OHM MODEL.


38 270K OHM MODEL.

39 294K OHM MODEL.

40 d97K OHM MODEL.

41 3.01M OHM MODEL.

42 301 OHM MODEL.


44 330 OHM MODEL.

45 360.1K OHM MODEL.

46 38/PIN DEVICE CMOS, GATE ARRAY, SEMICUSTOM, MONOLITHIC.

47 383 OHM MODEL.

48 392K OHM MODEL.

49 4.37 OHM MODEL.


51 400K OHM MODEL.


53 47.5 OHM MODEL.

47

RAC ESD DATABASE

Table 5 - TEST REMARKS LISTING (Cont'd)

CODE TEST REMARKS


55 475K OHM MODEL.

56 49.9 OHM MODEL.

57 499 OHM MODEL.

58 5 PULSES APPLIED AT BOTH FORWARD AND REVERSE POLARITIES.

59 5 PULSES FORWARD, 5 PULSES REVERSE.

60 5 PULSES PER POLARITY. DEVICES HAD METAL LID.

61 50 OHM MODEL.

62 50% FAILURE RATE WITH ARCING BETWEEN LEADS.


64 511K OHM RESISTOR.


66 57.6 OHM MODEL.

67 590 OHM MODEL.


69 604K OHM MODEL.

70 665K OHM MODEL.

71 7 OUT OF 10 DEVICES FAILED COLLECTOR TO BASE.

72 768K OHM MODEL.



75 ALL 10 INPUTS FAILED TO VSS AT 800 VOLTS.

76 ALL UNUSED INPUTS AT 5.5 VOLTS.

77 ALL UNUSED INPUTS AT GROUND.

78 ALSO DEGRADATION FROM COMMON TO OUTPUT OF 4000 VOLTS.

79 ALSO FAILED 4,5,7-13 TO VDD AT 500 VOLTS.

80 ALSO FAILED FROM 5,6 & 7 TO VSS AT 800 VOLTS.

81 ALSO FAILED FROM ALL OTHER INPUTS TO VSS AT 800 VOLTS.

82 ALSO FAILED FROM INPUT PINS 5,6,8-13 TO VSS AT 800 VOLTS.

83 ALSO FAILED FROM PIN 7 TO OUTPUT AT 1000 VOLTS.

84 ALSO FAILED FROM PINS 4-8 AND 11-13 TO VSS AT 800 VOLTS.

85 ALSO FAILED FROM PINS 5,6,7,11 TO VDD AT 1000 VOLTS.

86 ALSO FAILED FROM PINS 5-13 TO VSS AT 800 VOLTS.

87 ALSO FAILED FROM PINS 8-13 TO VSS AT 800 VOLTS.

88 ALSO FAILED PIN 12 TO VDD AT 500 VOLTS.

89 ALSO FAILED PIN 4 TO VDD, 5-7,9-13 TO OUTPUT AT 500 VOLTS

90 ALSO FAILED PIN 9 TO OUTPUT AT 800 VOLTS.

91 ALSO FAILED PIN 9 TO VOD AND 8 TO OUTPUT AT 1000 VOLTS.

92 ALSO FAILED PIN 9 TO VSS AT 800 VOLTS.

93 ALSO FAILED PINS 4,5 & 9 TO VSS AT 800 VOLTS.

94 ALSO FAILED PINS 5 AND 10 TO VDD AT 800 VOLTS.

95 ALSO FAILED PINS 5-13 TO OUTPUT AT 500 VOLTS

96 ALSO FAILED PINS 5-13 TO VSS AT 800 VOLTS

97 ALSO INPUT TO GND DEGRADED AT 1800 VOLTS.

98 ALSO SHOWED DEGRADATION ON INPUT TO INPUT AT 2000 VOLTS.

99 AVERAGE FAILURE VOLTAGE FOR ALL PINS IS 100OV.

100 AVERAGE FA!IURE VOLTAGE FOR ALL PINS IS 1020V.

101 AVERAGE FAILLRr ."LTAGE FOR ALL PINS IS 1025V.

102 AVERAGE FAILUmE VOLTAGE FOR ALL PINS IS 1060V.

103 AVERAGE FAILURE VOLTAGE FOR ALL PINS IS 1070V.




48

RAC ESD DATABASE


CODE TEST REMARKS


















124 AVERAGE FAILURE VOLTAGE FOR ALL PINS IS 300OV.


















142 AVG OF ALL INPUTS 940V, PINS 1,2,15 MOST SUSCEPTIBLE.

143 AVG OF ALL INPUTS 960V, PIN 15 MOST SUSCEPTIBLE.

144 AVG OF ALL INPUTS 960V, PINS 11,14 MOST SUSCEPTIBLE.

145 BOTH POLARITIES WERE TESTED.

146 BREAKDOWN VOLTAGE CHARACTERISTICS WERE DEGRADED.

147 CARRY LOOK AHEAD GENERATOR.

148 CATASTROPHIC FAILURES OBSERVED ARE DUE TO EMIT. CONTACT PENETRATING THE SILICON.

149 CHARGED DEVICE MODEL.

150 COLLECTOR TO BASE FOUND TO BE MOST SENSITIVE (BOTH POLARITIES).

151 COMMON TO OUTPUT SHOWED DEGRADATION AT 4000 VOLTS.

152 CRYSTAL (4 Mnz).

153 DAMAGE OBSERVED AT -700 VOLTS, FAILED AT 1100 VOLTS.

154 DAMAGE OBSERVED AT 1000 VOLTS, ALL PINS FAILED AT OR BEFORE 3500 VOLTS.

155 DAMAGE OBSERVED AT 1050 VOLTS, ALL INPUT PINS FAILED AT OR BEFORE 2000 VOLTS.

156 DAMAGE OBSERVED AT 150 VOLTS, ALL DEVICES FAILED AT OR BEFORE 400 VOLTS.

157 DATE CODE TESTED WERE BETWEEN 8134 TO 8715.

158 DEGRADATION OCCURRED AT 1000V.


49

RAC ESD DATABASE


CODE TEST REMARKS

160 DEGRADATION OCCURRED AT 200OV.




164 DEGRADATION OCCURRED AT THE APPLIED VOLTAGE.

165 DELAY LINE, PULSE, ELECTROMAGNETIC, LUMPED CONSTANT, 16 PIN DIP.

166 DEVICE PASSED THE REVERSE V-I CURVE AFTER TESTING.

167 DIFFERENT PIN COMB. TESTED AT EACH VOLTAGE STEP.

168 DRIVER / RECEIVER.

169 DUAL PNP TRANSISTOR.

170 EACH PIN STRESSED WITH ALL OTHER PINS CONNECTED TO GROUND.

171 EACH PIN TESTED TO ALL OTHERS TIED TOGETHER.

172 EMITTER TO BASE FAILED AT 3500 VOLTS.

173 FAILED FROM PINS 4,8,13 TO VDD AND 10 TO OUTPUT AT 500 V.

174 FAILED INPUTS TO GND. VOLT IS AVG. OF 4 DEV. MEAN ENGY=16UJ.

175 FAILED PIN 13 TO VDD AT 500 V, 8 TO VSS, 6 TO VDD AT 800 V.

176 FAILED PIN 16 TO VDD AT 500 V & PIN 5 TO VSS AT 800 V.

177 FAILED PINS 13 TO VDD AND PIN 4 TO OUTPUT AT 800 VOLTS.

178 FAILED PINS 5-6,11-13 TO VSS 7 TO VDD & 8-10 TO OUTPUT 50OV.

179 FAILED PINS 5-7,9,11 TO VSS 8,10,12 TO VDD AT 500 VOLTS.

180 FAILED PINS 5-8 & 10-13 TO VSS & PIN 9 TO VDD AT 500 VOLTS.

181 FAILED PINS 5-8 & 10-13 TO VSS AT 500V & 9 TO VSS AT 800 V.

182 FAILED PINS 8,13 TO VSS, 15 TO VSS AND 6 TO VDD, ALL AT 80OV.

183 FAILED PINS 8-13 TO VSS AT 300V & PINS 4,6 TO OUTPUT AT 500V

184 FAILURE VOLTAGE FROM EMP DATA & WUNSCH MODEL. (SUPERSAP 2).

185 FAILURE VOLTAGE GIVEN IS APPROXIMATE VALUE ONLY.

186 FAILURE VOLTAGE IS AN AVERAGE OF 15 DEVICES.

187 FAILURE VOLTAGE IS AN AVERAGE.

188 FAILURE VOLTAGE OBTAINED FROM EMP DATA AND EXPONENTIAL MODEL.

189 FAILURE VOLTAGF .AINED FROM EMP DATA AND WUNSCH MODEL.

190 FAILURE VOLTAGE OBTAINED FROM EMP DATA.

191 FAILURES WERE DUE TO INCREASED CONTACT RESISTANCE.

192 FIVE PULSES BOTH POLARITY ACROSS EACH PIN COMBINATION.

193 FREQUENCY SYNTHESIZER.

194 HEX SCHMIDTT TRIGGER.

195 HYBRID, OSCILLATOR.

196 IMCS TO >17.5KV, PAL TESTER TO >43KV. PAL IS A MOTOROLA IN HOUSE BUILT TESTER.

197 IN MOST FAILURES, Vos STARTS FAILING FIRST. THEN, Ios,IB,AND Icc.

198 INITIAL IGSS IS 0.1uA AND FINAL IGSS IS lOuA.

199 INITIAL IGSS IS 3.8uA AND FINAL IGSS IS 1OuA.

200 INITIAL IGSS WAS O.luA AND FINAL IGSS WAS 1.OuA.

201 INITIAL IGSS WAS O. IA A,.: THE IiNAL luo: wAS .

202 INITIAL IGSS WAS 1.OuA AND FINAL IGSS WAS 3.4uA.

203 INITIAL IGSS WAS 1uA AND FINAL IGSS WAS 10uA.

204 INPUT AND CLAMPING DIODES WERE TYPICAL FAILURES.

205 INPUT fkILED AT 2500 AND 3000 VOLTS, OUTPUT DID NOT FAIL.

206 INPUT PIN 1 FAILED AT 200V AND INPUT PIN 8 FAILED AT 30OV.

207 INPUT PIN I FAILED AT 200V AND INPUT PIN 8 FAILED AT 400V.

208 INPUT PIN 1 FAILED AT 200V.

209 INPUT PIN 1 FAILED AT 30OV.

210 INPUT PIN 1 FAILED AT 400V AND INPUT PIN 8 FAILED AT 50OV.

211 INPUT PIN 1 FAILED AT 50OV.


50

RAC ESD DATABASE


CODE TEST REMARKS



215 INPUT PIN 2 FAILED AT 40Ov.





220 INPUT PINS 1 AND 8 FAILED AT 300V.


222 INPUT PINS 1 AND 8 FAILED AT 50OV.







229 INPUT TO COM. 3000 V, OUTPUT TO COMMON FAIL AT 1600 VOLTS.

230 INPUT TO OUTPUT DEGRADATED AT 600 VOLTS.

231 INPUTS STRESSED NO PINS GND CAP. OF PACKAGE TO GND IS 290PF.

232 INPUTS STRESSED NO PINS GND CAP. OF PACKAGE TO GND IS 3.5PF.



235 INPUTS STRESSED NO PINS GNO CAP. OF PACKAGE TO GND IS 6.5PF.

236 INTEL METHOD.

237 INTEL MODEL.

238 IR CHANGED FROM .045uA TO 22.JuA ON ONE DEVICE. 5 PULSES FORWARD AND REVERSE.

239 IR CHANGED FROM .l03uA, 200V TO .4uA, 80 VOLTS. 5 PULSES FORWARD & REVERSE.

240 IR DOUBLED AFTER 400 VOLTS, SHORTED AFTER 500 VOLTS.

241 IR INCREASED FROM .05uA TO 148uA. 5 PULSES FORWARD, 5 PULSES REVERSE.

242 IR INCREASED FROM .19MA TO .23MA. 5 PULSES FORWARD, 5 PULSES REVERSE.

243 IR INCREASED ON 3 DEVICES; 5.4 TO 6.2uA, 3.7 TO 4.1uA, AND 4.6 TO 5.6uA.

244 JUNCTION IS DAMAGED BEFORE DEVICE FAILS ELECTRICALLY.

245 LED DEVICES WHICH HAVE REV BRKDWN DAMAGE CAUSED BY ESD MAY FUNC NORM IN FWD DIR.

246 MICROCONTROLLER.

247 MIL-STD-8838 METHOD 3015 (CAT 8), DEVICE PASSED 2000V TEST.

248 MIMIMUM OBSERVED DAMAGE WAS 200 VOLTS ALL DEVICES FAILED AT OR BELOW 300 VOLTS.

249 MIMIMUM OBSERVED DAMAGE WAS 500 VOLTS ALL INPUT PINS FAILED AT OR BEFORE 700 V.

250 MINIMUM OBSERVED WAS 2600 VOLTS, ALL DEVICES FAILED AT OR BEFORE 3000 VOLTS.

251 MODULATOR.

252 N/R.

253 NO DEGRADATION TO OUTPUT AT 4000 VOLTS.

254 NO DEGRADATION TO OUTPUT PINS.

255 NO FAILURES OBSERVED GATE TO CATHODE.

256 OF 4 DEVICES FAILURE VOLTAGE WAS FROM 1400V TO 6000 VOLTS.

257 OF THE FOUR DEVICES TESTED TWO DEVICE DATE CODES WERE GIVEN AS 8615 AND 8501.

258 ONE DEVICE IR SHORTED. 5 PULSES FORWARD, 5 PULSES REVERSE.

259 OTHER PINS OPEN.

260 OTHER PINS TIED TO GND.

261 PAL TESTER IS A MOTOROLA IN HOUSE BUILT IMCS TO >17.5KV, PAL TO >43KV.

262 PIN UNDER TEST STRESSED WITH ALL OTHERS TIED TOGETHER FLOATING.

263 PINS 1 AND 2 FAILED AT 1100 VOLTS.

264 PINS 11-14 TO VSS,15 TO VDD AT 800V,8,13 TO OUTPUT AT 1000V.

265 PINS 13 TO VSS, 9 TO VSS AT 1000V, 8 TO VDD AT 1000 VOLTS.

51

RAC ESD DATABASE

Table 5 - TEST REMARKS LISTING (Con'.i

TEST REMARKS

266 PINS 3,4,5, AND 22 FAILED AT 1200 VOLTS.

267 PINS 8-15 TO VSS AT 500V, 11 TO OUTPUT AT 500 VOLTS.

268 PINS THAT FAILED 3,6-8,11,14,15,17-21, AND 23.

26V PRECISION MOTION CONTROLLER.

270 PROGRAMMABLE BAND PASS FILTER.

271 PROGRAMMABLE INTERVAL TIMER.

272 QUAD DEVICE, ONE DIODE PER DEVICE TESTED.

273 SEMI-CUSTOM GATE ARRAY.

274 SERIAL INPUT PLL FREQUENCY SYNTHESIZER.

275 TEST PREPARED AT 25 DEGREES C.

276 THE MOST SENSITIVE PIN TESTED IS B.

277 THE MOST SENSITIVE PIN TESTED IS G.

278 THE MOST SENSITIVP PINS TESTED ARE C TO B.

279 THE MOST SENSITIVE PINS TESTED ARE C TO E.

280 THE MOST SENSITIVE PINS TESTED ARE E TO B.

281 THE MOST SENSITIVE PINS TESTED ARE G AND D TO S.

282 THE MOST SENSITIVE PINS TESTED ARE S AND D TO G.

283 THE MOST SENSITIVE PINS TESTED ARE S AND G TO D.

284 VOLTAGE IS AN AVERAGE OF 12 RESISTORS. MEAN ENERGY OF 48UJ.

285 VOLTAGE IS AN AVERAGE OF 4 DEVICES.

286 VOLTAGE IS AN AVERAGE OF ALL INPUTS.

287 WORST CASE PINS (+) 1-4,9,10,20,23-27(-)1,1O.LOT # (413,410-1).

2d8 WORST CASE PINS (+) 4-6,22,23,25-27 (-) 20,21. LOT # (284/006,285/008,416-3).

289 ZERO OHMS MODEL.

52

RAC ESD DATABASE

Table 6 - GENERAL REMARKS LISTING

CoL CNERAL REMARKS

1 5 PULSES /-.

2 ALL PINS BUT PIN UNDER TEST CONNECTED TO GND VIA RESISTOR. VDD AND VSS GROUNDED.

3 5EGIN WITH 20OV, INCR. 1OV TO 1000V, INCR. 200V TO 200OV, INCR 500V TO 4000V.

CHARGED DEVICE MODEL.

S DATA OBTAINED FROM WEIBULL PLOTS. STEPS WERE 20% OF AN UNKNOWN STARTING VOLTAGE.

6 -EVICE PASSED REVERSE V-I CURVE. FORWARD AND REVERSE POLARITY TESTED.

7 FAI'ED vOLTAGE IS THE AVERAGE OF PARTS SAMPLED.

S FAILURE VOLTAGE OBTAINED FROM EMP DATA AND EXPONENTIAL MODEL.

9 FAILURE VOLTAGES GIVEN ARE VOLTAGE TO CAUSE 30% FAILURE. DETAILS UNKNOWN.

10 !MCS TESTER TO >17.5KV, PAL TESTER TO >43KV. ONE PULSE PER VOLTAGE INCREMENT.

11 IN ACCORDANCE WITH MIL-STD-883B METHOD 3015 (CAT B), DEVICE PASSED 2000V TESTING.

12 MODEL 900.

13 N/R.

14 PIN COMBINATIONS AND POLARITY DIFFER FOR EACH OF THE FOUR PULSES.

15 P'N UNDER TEST STRESSED WITH ALL OTHER PINS TIED TOGETHER GROUNDED.

16 PIN UNDER TEST STRESSED WITH ALL OTHER PINS.

17 START 100V WITH INCREMENTS OF 100V TO IO00V. THEN INCREMENTS OF 250V TO FAILURE.

18 STEP STRESS TEST WAS PERFORMED HOWEVER ACTUAL VOLTAGE STEPS WERE UNKNOWN.

19 STEPPED FROM 1800 VOLTS TO FAILURE IN 25 VOLT INCREMENTS.

20 STEPPED IN 100 VOLT INCREMENTS STARTING AT 400 VOLTS.

21 STEPPED IN 2.5 VOLT INCREMENTS.

22 STEPPED IN 25 VOLT INCREMENTS.

23 STRESSED IN INCREMENTS OF 20% STARTING AT 16V FOR MOS DEVICES AND 70V FOR OTHERS.

24 TEST VOLTAGE WAS INCREMENTED FROM 100V TO 5500V IN 100V STEPS.

25 TESTED TO 2000 VOLTS PER METHOD 3015.2 OF MIL-STD-883.

26 TESTER IS A MARTIN MARIETTA IN HOUSE BUILT.

27 THERE WERE ALSO 100V INCREMENTS STEPPED FROM 100V TO 800V.

28 VOLT INCREMENTS AS FOLLOWS:100V TO 1KV,250V TO 3KV,500V TO 6KV,AND 1KV TO 16KV.

29 VOLTAGE STEP LEVELS 100 VOLT INCREMENTS UP TO 4000 VOLTS.

53

SECTION 3.1

MICROCIRCUIT SUSCEPTIBILITY TEST DATA

55

RAC ESD Database

.2 t2.1 2 1

C E

C) C Q2) LL V r

0 .2 C)j (,j tnU)

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c a CLaccc

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57 'C'

RAC ESD Database

G-- ~-N

00-

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RAC ESD Database

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c) u uu

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RAC ESD Database

CE

CC) C) ~ Ci^

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RAC ESD Database

C E

C) C)r jCjCj ~ j r ~, CNJ CC'C) ~ Ii J C\C'r ) ISC'

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I~1 - (C.C.C .C.C . -61

RAC ESD Database

4 D w-C--oN

( j l

C) An L A L u Lc) j(j c 2 ! ~ l j r l

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3' c) C) A '3 C)00)O0*A l 'j Cl CC

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RAC ESD Database

r E

w CMCMCMC CMjSC CM jr C M Cj C'J 0 CMu.,CMMC CMCMC'NMC M CM v% v% CM -n CMul

cm 4)

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63

RAC ESD Database

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0 (0'. Al A 0 ' 0 ' 0 00 ' 0 ' 00 '0 '0cC cJ.0 02 2LA LA Ln LA LA LLA LA LA LA inALM LA LA(50 cGJ

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64

RAC ESD Database

10

C E

-~~ LnIr U ~ t LA~ L(% V%~ Il i L Ln In% In tLn~ LAn~LNj N( 0i MI C\J NM N~ Nm N~ cm C.J fm mCNNmC~

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06

RAC ESD Database

- U ~r r ) U., U4'% rnLn U rIn

c E,3 Ce

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RAC ESD Database

c EC) C)

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RAC ESD Database

(Ci . . .fjC

0' ('4 Ml 4 (' '1CJ(Jrs '

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LU C) (C~ . N ~ N.68

RAC ESD Database

CE

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(U (l-.. 4. .4 4,- --6 9

RAC ESD Database

c C, CD C) C

~C0 C C - ) 0 0 0 0 0

CO- CO- .9- CL

12 u

000 D

Lia a0m

C0 C CDO CDC C>0> D

C CDC) CD4 CS) V%0 >V

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

C EU

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

C E

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RAC ESD Database

a) mC E

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RAC ESD Database

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LU354

RAC ESD Database

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RAC ESD Database

L3

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RAC ESD Database

rj ('4 ('4 (' (4 '

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(35

RAC ESD Database

C E

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1/C358

PAC ESD Database

4CCNJr~ (\j C)CM(J NJ

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RAC ESD Database

C Fa) C)

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RAC ESD Database

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RAC ESD Database

C) (

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RAC ESI) Database

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364

RAC ESD Database

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Ln (A (A Ln (A (A UN (e~ m rj e'. CrJCE' C

CV) V- V) w)--=--

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RAC ESD Database

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RAC ESD Database

C E0) a)

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RPC ESD Database

a) S

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RAC ESD Database

'~-v c2fJ l> E

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c h ccc o 0 0

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mC -uI co (i

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RAC ESD Database

372

electrostatic discharge susceptibility data dtic · 2011-05-15 · variation in the test results. a...

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