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© May 10, 2009 Dr. Lynn Fuller Electronic Circuit Casebook Page 1 Rochester Institute of Technology Microelectronic Engineering ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Electronic Circuit Casebook Dr. Lynn Fuller Webpage: http://people.rit.edu/lffeee Microelectronic Engineering Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Fax (585) 475-5041 Email: [email protected] Department webpage: http://www.microe.rit.edu 5-10-2009 Electronic_Circuit_Casebook.ppt

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© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 1

Rochester Institute of TechnologyMicroelectronic Engineering

ROCHESTER INSTITUTE OF TECHNOLOGYMICROELECTRONIC ENGINEERING

Electronic Circuit Casebook

Dr. Lynn Fuller Webpage: http://people.rit.edu/lffeee Microelectronic Engineering

Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Fax (585) 475-5041

Email: [email protected] Department webpage: http://www.microe.rit.edu

5-10-2009 Electronic_Circuit_Casebook.ppt

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 2

Rochester Institute of TechnologyMicroelectronic Engineering

OUTLINE

Power Conditioning, Voltage RegulatorsAnalog Switches, Two Phase ClocksVoltage Inverters, DoublersAmplifiers, Log AmplifiersRC OscillatorsVoltage Controlled Oscillators

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 3

Rochester Institute of TechnologyMicroelectronic Engineering

INTRODUCTION

This document contains information on some electronic circuits that have been used as subcomponents in various microsystems. In general these circuits are realized using a hybrid combination of packaged integrated circuits, passive and active components combined at the printed circuit board (PCB) level. Some circuitshave been converted to custom CMOS integrated circuits to provide on chip electronics and signal conditioning for MEMS devices.

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 4

Rochester Institute of TechnologyMicroelectronic Engineering

POWER CONDITIONING

Unregulated9 to 24 volts DC

MAX1044Vin 1.5 to 10Vout = ~ -Vin

LM317MVout 1.2 to 37

500mA

UCC384Vout -3.3100mA

Negative Voltage Regulator

Positive Voltage Regulator

Voltage Converter

mic2950Vout 3.3150mA

+5 Volts+3.3 Volts

-5 Volts-3.3 Volts

Positive Voltage Regulator

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 5

Rochester Institute of TechnologyMicroelectronic Engineering

BASIC VOLTAGE REGULATOR

Vout

R1

R2Gnd

UnregulatedPower Supply

(e.g. transformer,

rectifier, capacitor filter)

BJT or MOS Transistor Pass

Element

Vref

RLoad-+Av

+-

Voltage Regulator

Vout = Vref(1+R2/R1)

-+ Vx

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 6

Rochester Institute of TechnologyMicroelectronic Engineering

VOLTAGE REGULATOR

LM317MVout 1.2 to 37

500mA

Positive Voltage Regulator

Vout = 1.25(1+R2/R1)

Vin VoutR1

R2Gnd

See: data sheets for LM317M-D.pdf

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 7

Rochester Institute of TechnologyMicroelectronic Engineering

TWO PHASE NON OVERLAPPING CLOCK

Synchronous circuits that use the two phase non overlapping clock can separate input quantities from output quantities used to calculate the results in feedback systems such as the finite state machine.

Φ1

Φ2

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 8

Rochester Institute of TechnologyMicroelectronic Engineering

TWO-PHASE CLOCK GENERATORS

CLOCKBAR

Φ1

Φ2

CLOCK Φ1

Φ2

CLOCKBAR

CLOCK

t1

t3

t2

t1

t3

t1

QS

0 0 Qn-10 1 11 0 01 1 INDETERMINATE

RCB

0 0 10 1 01 0 01 1 0

A

S

RQ

t2

=

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 9

Rochester Institute of TechnologyMicroelectronic Engineering

TRANSISTOR LEVEL SCHEMATIC OF 2 PHASE CLOCK

+V

Φ1 Φ2

+V

Clock

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 10

Rochester Institute of TechnologyMicroelectronic Engineering

LAYOUT OF TWO PHASE CLOCK

CLOCKBAR

CLOCK Φ1

Φ2t3

t2

t1

S

RQ

M3 M5

M4 M6

3 4

M1

M2

2V15V

+-

1

TwoPhaseClock1.txt

0

V2CLOCK

+-

8

765

9

Substrate of all NMOS go to ground, node 0Substrate of all PMOS go to +5V, node 1

M9

M10

M7

M8

M11

M12

M13

M14

M15

M16

M17

M18

VOUT1 VOUT210 11

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 12

Rochester Institute of TechnologyMicroelectronic Engineering

WINSPICE SIMULATION

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 13

Rochester Institute of TechnologyMicroelectronic Engineering

TWO PHASE NON OVERLAPPING CLOCK

Clock

Φ1

Φ2

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 14

Rochester Institute of TechnologyMicroelectronic Engineering

VERSION 2 OF TWO PHASE NON OVERLAPPING CLOCK

CLOCKBAR

CLOCK Φ1

Φ2t3

t2

t1

S

R

2

V15V

+-

1

0

V2CLOCK

+-

M5

M7

M6 M16

3 4

M3

M4

8

76

9

M1

M2

5

M9

M10

M11

M12

M13

M14

M15

M18

M17

M8

VOUT1 VOUT210 11

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 15

Rochester Institute of TechnologyMicroelectronic Engineering

WINSPICE SIMULATION

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 16

Rochester Institute of TechnologyMicroelectronic Engineering

ANALOG SWITCHES

For current flowing to the right (ie V1>V2) the PMOS transistor will be on if V1 is greater than thethreshold voltage, the NMOS transistor will be on if V2 is <4 volts. If we are chargeing up a capacitor load at node 2 to 5 volts, initially current will flow through NMOS and PMOS but once V2 gets above 4 volts the NMOS will be off. If we are trying to charge up V2 to V1 = +1 volt the PMOS will never be on. A complementary situation occurs for current flow to the left. Single transistor switches can be used if we are sure the Vgs will be more than the threshold voltage for the specific circuit application. (or use larger voltages on the gates)

NMOSVt=+1

PMOSVt= -1

DS

I

zero

V1 V2

+5

SD

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 17

Rochester Institute of TechnologyMicroelectronic Engineering

(+V to -V) ANALOG SWITCH WITH (0 to 5 V) CONTROL

DS

0-5V Logic Control

Vout

+5

SDVin

+V

-V

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 18

Rochester Institute of TechnologyMicroelectronic Engineering

SWITCHED CAPACITOR VOLTAGE DOUBLER

VddC1

Φ1

Φ2

C1

Φ2

Φ1

Φ1Φ1

Φ2

CLoad RLoad

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 19

Rochester Institute of TechnologyMicroelectronic Engineering

BASIC TWO STAGE OPERATIONAL AMPLIFIER

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 20

Rochester Institute of TechnologyMicroelectronic Engineering

SPICE ANALYSIS OF OP AMP VERSION 2

.incl rit_sub_param.txtm1 8 9 7 6 cmosn w=9u l=5u nrd=1 nrs=1 ad=45p pd=28u as=45p ps=28um2 1 10 7 6 cmosn w=9u l=5u nrd=1 nrs=1 ad=45p pd=28u as=45p ps=28um3 8 8 4 4 cmosp w=21u l=5u nrd=1 nrs=1 ad=102p pd=50u as=102p ps=50um4 1 8 4 4 cmosp w=21u l=5u nrd=1 nrs=1 ad=102p pd=50u as=102p ps=50um5 7 5 6 6 cmosn w=40u l=5u nrd=1 nrs=1 ad=205p pd=90u as=205p ps=90um6 2 1 4 4 cmosp w=190u l=5u nrd=1 nrs=1 ad=950p pd=400u as=950p ps=400u m7 2 5 6 6 cmosn w=190u l=5u nrd=1 nrs=1 ad=950p pd=400u as=950p ps=400u m8 5 5 6 6 cmosn w=40u l=5u nrd=1 nrs=1 ad=205p pd=90u as=205p ps=90uvdd 4 0 3vss 6 0 -3cprobe 2 0 30pRprobe 2 0 1megcc 1 2 0.6pmr1 20 20 4 4 cmosp w=6u l=10u nrd=1 nrs=1 ad=200p pd=60u as=200p ps=60umr2 5 5 20 4 cmosp w=6u l=10u nrd=1 nrs=1 ad=200p pd=60u as=200p ps=60u****************************

***dc open loop gain*********

vi1 9 0 0vi2 10 0 0 *.dc vi2 -0.002 0.002 1u.dc vi2 -1 1 0.1m*****open loop frequency

characteristics******vi1 9 0 0 *vi2 10 0 dc 0 ac 1u*.ac dec 100 10 1g.end

13.5kV/V gain

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 21

Rochester Institute of TechnologyMicroelectronic Engineering

OPERATIONAL AMPLIFIER

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 22

Rochester Institute of TechnologyMicroelectronic Engineering

SOME BASIC ANALOG ELECTRONIC CIRCUITS

These circuits should be familiar:

-

+VoVin

R2R1

Inverting Amplifier

-

+Vo

Vin

R2R1

Non-Inverting Amplifier

-

+

Unity Gain Buffer

-

+VoVin

C

R

Integrator

VinVo

Vo= - Vin R2/R1

Vo= Vin

Vo= Vin (1 + R2/R1)

Vo= -1/RC Vin dt

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 23

Rochester Institute of TechnologyMicroelectronic Engineering

COMPARATOR

-+

VoVin

Vo

Vin

Vref

+V

-VVref

+V

-V

+V-V

Measured

Theoretical

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 24

Rochester Institute of TechnologyMicroelectronic Engineering

BISTABLE CIRCUIT WITH HYSTERESIS

-+ Vo

Vin

+V

-V

R2R1 Vo

VinVTH

+V

-V

VTL

Sedra and Smith pg 1187Measured

Theoretical

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 25

Rochester Institute of TechnologyMicroelectronic Engineering

RC INTEGRATOR

C

VoutR

Vin

Vin

t+Va

-Va

Vout

t+Va

-Va

Smaller RC

t1

Vout = (-Va) + [2Va(1-e-t/RC)] for 0<t<t1

If R=1MEG and C=10pF find RC=10us so t1 might be ~20us

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 26

Rochester Institute of TechnologyMicroelectronic Engineering

OSCILLATOR (MULTIVIBRATOR)

-+ Vo

C

+V

-V

R2R1

R

Vo

tt1

VT

+V

-V

Bistable Circuit with Hysteresis and RC Integrator

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 27

Rochester Institute of TechnologyMicroelectronic Engineering

RIT 100X DIFFERENTIAL VOLTAGE AMPLIFIER

1” X 1.5”

Vo1-+

RinRf

Vb-+

Va

-+Rf

Gnd

Rin

Vo2-+

RinRf

Gnd

Va

VbRf = 100KRin = 10K

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 28

Rochester Institute of TechnologyMicroelectronic Engineering

INSTRUMENTATION AMPLIFIER

Vo-+

R3

R4

Vo2+-

Vo1

-+

R4

Gnd

R3

V1

V2

R2

R1

R2

Vo = (V2-V1) R4R3

2R2R1

1 +

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 29

Rochester Institute of TechnologyMicroelectronic Engineering

CIRCUIT FOR LOW FREQUENCY CV MEASUREMENTS

Vout = (C R1 R3 / R2) (dVin/dt)

R1=18 Mohm

R2=1 Kohm

R3=33 Kohm

Vout

-

++

-

C

+

Vin

LM081 LM081-

1 V/secRamp

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 30

Rochester Institute of TechnologyMicroelectronic Engineering

C-V MEASUREMENTS ON N-TYPE SILICON

V0

C

High Frequency

Low Frequency

Accumulation

Depletion

Inversion

VFBVT

Cmin

CFB

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 31

Rochester Institute of TechnologyMicroelectronic Engineering

C-V MEASUREMENTS ON P-TYPE SILICON

V0

C

High Frequency

Low Frequency

Accumulation

Depletion

Inversion

VFB VT

Cmin

CFB

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 32

Rochester Institute of TechnologyMicroelectronic Engineering

PEAK DETECTOR

-

+Vo

C

Variable Vin

Diode reverse leakage current ~100nA

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 33

Rochester Institute of TechnologyMicroelectronic Engineering

DESIGN EXAMPLE – CAPACITOR SENSOR

-+

C

+V

-V

R2R1

R

C

+-

Vo

Vref -VC

R

-

+

Square WaveGenerator

ComparatorPeak Detector

RC Integrator

&Capacitor

Sensor

Buffer Display

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 34

Rochester Institute of TechnologyMicroelectronic Engineering

EXAMPLE LABORATORY RESULTS

Square WaveGenerator

OutputBufferOutput

Display

Smaller Capacitance

Larger Capacitance

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 35

Rochester Institute of TechnologyMicroelectronic Engineering

PHOTODIODE I TO V LINEAR AMPLIFIER

+pn

Vout0 to 1V

R2

I

Gnd

20K

3.3V

-3.3

3.3V

Gnd

IR LED +

R4100K

3.3V

-3.3

R310K

R110K

NJU703NJU703

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 36

Rochester Institute of TechnologyMicroelectronic Engineering

PHOTO DIODE I TO V LOG AMPLIFIER

+p

nVout0 to 1V

I

Gnd

3.3V

-3.3

NJU7033.3V

Gnd

IR LED

R120K

1N4448

Vout vs. Diode Current

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.01 0.1 1 10 100 1000 10000

Diode Current (uA)

Ou

tpu

t Vo

ltag

e (V

)

Linear AmplifierLog Amplifier

Linear amplifier uses 100K ohm in place of the 1N4448

Photodiode

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 37

Rochester Institute of TechnologyMicroelectronic Engineering

PHOTO DIODE I TO V INTEGRATING AMPLIFIER

Rf

-+

Ri-+

C

Reset

Internal100 pF

Analog Vout

Integrator and amplifier allow for measurement at low light levels

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 38

Rochester Institute of TechnologyMicroelectronic Engineering

SIGNAL CONDITIONING FOR TEMPERATURE SENSOR

p

n

Gnd

I3.3V

R120K

0.2 < Vout < 0.7V

+

-

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 39

Rochester Institute of TechnologyMicroelectronic Engineering

SIGNAL CONDITIONING FOR TEMPERATURE SENSOR

pMOSFET

Gnd

I

3.3V

0.2 < Vout < 0.7V

+

-

Constant Current Source

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 40

Rochester Institute of TechnologyMicroelectronic Engineering

OP AMP CONSTANT CURRENT SOURCE

Vo -+Vs

Vo+

RxR1L

oad

R

I = V

s/R

Floating Load Grounded Load

Vs

Loa

d

Rx/R1=R3/R2

I = Vs/R2

R3R2

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 41

Rochester Institute of TechnologyMicroelectronic Engineering

OVER TEMPERATURE DETECTOR CIRCUIT

• Based on the same principle of threshold-crossing detection.• Diode voltage (Vdiode) and Vin are the monotonically decreasing

functions of temperature (T).

• To increase the sensitivity, use more diodes.

Rlower = 47k

Rupper = 100k3V

100k

220

LED

MC33204

1N4448

DiodeTemperature

Sensor

• Vin < Vref à T > Tref : LED is ON

• Vin ≥ Vref à T ≤ Tref : LED is OFF

Vin(T)

Vref

Vout

( ) ( )

( ) ( ) supplylowerupper

lowerrefdiode

lowerupper

upperrefref

supplylowerupper

lowerdiode

lowerupper

upperin

VRR

RTV

RR

RTV

VRR

RTV

RR

RTV

++

+=

++

+=

Jirachai Getpreecharsawas, 2009

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 42

Rochester Institute of TechnologyMicroelectronic Engineering

WATER CONDUCTIVITY LOG I TO V AMPLIFIER

+Vout0 to 1V

Gnd

3.3V

-3.3

NJU703

1N4448

I

+Vg ~ - 0.1 V

Gnd

3.3V

-3.3

NJU703

320K

10K

-3.3

Conductivity (TDS)

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 43

Rochester Institute of TechnologyMicroelectronic Engineering

RC OSCILLATOR USING INVERTER WITH HYSTERESIS

1

2

V15V

+-

V2=0-5Or 5-0

+-

M12u/16u

R=10K

7

3Vout

M32u/15u

M22u/16u R

C

RC Oscillator

Inverter with Hysteresis

Vout

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 44

Rochester Institute of TechnologyMicroelectronic Engineering

RC OSCILLATOR, INVERTER WITH HYSTERESIS

3.0pF

1

2V19V

+-

M17

3

M3

M2

M4

C1

M5

M6

4M7 M8

All NMOS Realization

*TRANSISTORSM1 7 2 0 0 RITSUBN49 L=2U W=64U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025M2 3 2 7 0 RITSUBN49 L=2U W=16U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025M3 1 3 7 0 RITSUBN49 L=2U W=64U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025M4 1 1 3 0 RITSUBN49 L=32U W=8U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025M5 1 1 4 0 RITSUBN49 L=64U W=8U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025M6 4 3 0 0 RITSUBN49 L=2U W=128U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025M7 3 3 2 0 RITSUBN49 L=128U W=4U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025M8 3 2 2 0 RITSUBN49 L=64U W=4U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025*

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 45

Rochester Institute of TechnologyMicroelectronic Engineering

RC OSCILLATOR CMOS VERSION

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 46

Rochester Institute of TechnologyMicroelectronic Engineering

VOLTAGE CONTROLLED OSCILLATOR

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 47

Rochester Institute of TechnologyMicroelectronic Engineering

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 48

Rochester Institute of TechnologyMicroelectronic Engineering

PRESSURE SENSOR ZERO AND SPAN COMPENSATION

Gnd

Vs

R1 R3

R2 R4Vo+

Rzt

RzbRsb

Rst

Vo-

Rochester Institute of Technology Dr. Lynn Fuller 4/18/2007Microelectronic Engineering Bridge_Balance.xls

This spread sheet can be used to find resistor values used to compensate a wheatstone bridge resistor pressure sensor for output offset voltage and span. If we assume that the resistors are TaN thin film resistorsthat are adjusted by laser trimming then the trimmed value has to be higher than the nominal value. Firstadjust the value of Rzt and Rzb to set Vout trimmed to zero. Then set Rst and Rsb to make the trimmedstressed value equal to the specified output voltage at maximum applied pressure.

Vout Vout Vout VoutVsupply 10 volts no trim no trim trimmed trimmed

nominal stressed nominal stressed nominal stressedR1 500 502.5 Vo+ 5.012392 5.024722 5.00771 5.015380988 voltsR2 500 497.5 Vo- 5 4.988257 5.00771 5.000366427 voltsR3 495 492.525 Vout 12.39234 36.46555 0.000525 15.01456197 mVR4 500 502.5%change 0.5 when maximum pressure is applied (stressed)

nominalRst 250 551 ohms Vo+ = Itotal * Rsb + Iright * R4Rsb 250 551 ohms Vo- = Itotal * Rsb + Ileft * R2//Rzb

Vout = Vo+ - Vo-Rzt 10000 10000 ohmsRzb 10000 12658 ohms

no trim no trim trimmed trimmednominal stressed nominal stressed

Rleft 952.381 952.3799 957.1906 957.1436 (Rzt//R1) +(Rzb//R2)Rright 995 995.025 995 995.025 R3+R4Rtotal 986.6121 986.6178 1589.865 1589.858 Rleft//Rritght + Rst + RsbItotal 0.010136 0.010136 0.00629 0.00629 Vs/RtotalVbridge 4.932152 4.932181 3.068592 3.068565 Vs- Itotal (Rst+Rsb)Ileft 0.005179 0.005179 0.003206 0.003206 Vbridge/RleftIright 0.004957 0.004957 0.003084 0.003084 Vbridge/Rright

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 49

Rochester Institute of TechnologyMicroelectronic Engineering

POWER OUTPUT STAGE

-

+Vo

VinRload

+V

-V

-V

+V

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 50

Rochester Institute of TechnologyMicroelectronic Engineering

FLOW SENSOR ELECTRONICS

Gnd

+6 Volts

-6 Volts

Vout+-

Constant Power Circuit for the Heater

Vout near Zero so thatit can be amplified

R2

R1

UpstreamResistor

DownstreamResistor

STOPPLAY

AnalogMultiplier

AD534

Heater

10 Ω

+-

Vref

AD534_b.pdf

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 51

Rochester Institute of TechnologyMicroelectronic Engineering

CONSTANT TEMPERATURE CIRCUIT

AnalogDividerUsingAD534

Gnd

+9 Volts

I

Setpoint

+-

Heater

10 Ω

-+

+-

R=V/I

I

V

1000

MORE

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 52

Rochester Institute of TechnologyMicroelectronic Engineering

WHEATSTONE BRIDGE CONSTANT TEMP CIRCUIT

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 53

Rochester Institute of TechnologyMicroelectronic Engineering

DELTA CAPACITANCE TO AC VOLTAGE

Vin Cx

Vo If Cx is fixed Vo is zero. If Cx changes there will be a change in current and a corresponding change in Vo

Example: Let Vin = 3 volts, C = 10 pF, microphone action causes C to change by 0.1pF at 1000 Hz. Calculate the output voltage.

R

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 54

Rochester Institute of TechnologyMicroelectronic Engineering

CAPACITIVE OIL LEVEL DETECTION CIRCUIT

This circuit is designed to detect the presence of oil at a specified level. The fundamental operation is based on a threshold-crossing detection of signal level (voltage) due to a capacitive change of the probe. Contacting with different dielectric materials, either in air or immerging in oil, results in this change. As a consequence, the RC time constant of the probe is also altered, causing the probe to charge up to a different maximum voltage level within a given period of time. A peak detector is used to measure this voltage level, and the threshold-crossing detection is then carried out by the final stage op-amp, as shown.

100k

100k

4.7M

100p

3V

3V

3V

16M

2p – 3.5p

0.1µ

100k

220

LED

MC33204

1N4448100k

MC33204

MC33204

Jirachai Getpreecharsawas, 2009

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 55

Rochester Institute of TechnologyMicroelectronic Engineering

WIRELESS CAPACITANCE TO DIGITAL

CCLK

RCO____CCKEN______

0000000001

00000000

3 V

1 1

CCLR_____RCLK

RCLKSCLK

10-bit (Left) Shift Register

8-bitBinary Counter

Bluetooth SerialRF Link

CTS

TX

RX

RTS

2.4 kHz

5 Hz

5 Hz

Start Bit

Stop Bit

Internal Counter

000000 00 RC OscillatorSensor

RC Oscillator RC Oscillator

Jirachai Getpreecharsawas, 2008

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 56

Rochester Institute of TechnologyMicroelectronic Engineering

WIEN BRIDGE OSCILLATOR CIRCUIT

CMOS Analog Circuit Design, Phillip Allen, Douglas Holbert, Holt, Rinehard and Winston. 1987, pg 637-639.

STOPPLAY

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 57

Rochester Institute of TechnologyMicroelectronic Engineering

LOOP GAIN OF WIEN BRIDGE OSCILLATOR

CMOS Analog Circuit Design, Phillip Allen, Douglas Holbert, Holt, Rinehard and Winston. 1987, pg 637-639.

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 58

Rochester Institute of TechnologyMicroelectronic Engineering

LOW PASS FILTER

Vout

R2

-+

R1

C2

Vin

Derive an expression for Vo/VinPlot 20Log10 (Vo/Vin) vs frequencyVerify using SPICEVerify by building the circuit

Vo/Vin = -R2/R1 1

1 + j ω/ω1

ω = 2 π fω1 = 1/R2C2 f

1

SR2C2 + 1

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 59

Rochester Institute of TechnologyMicroelectronic Engineering

HIGH PASS FILTER

Vout

R2

-+

R1C1Vin

Derive an expression for Vo/VinPlot 20Log10 (Vo/Vin) vs frequencyVerify using SPICEVerify by building the circuit

Vo/Vin = -R2/R1 j ω/ω1

1 + j ω/ω1

ω = 2 π fω1 = 1/R1C1

f

SR1C1

SR1C1 + 1

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 60

Rochester Institute of TechnologyMicroelectronic Engineering

GENERAL FILTER

Vout-+

C2

Vin

R2C1R1

Derive an expression for Vo/VinPlot 20Log10 (Vo/Vin) vs frequencyVerify using SPICEVerify by building the circuit

Vo/Vin = -R2/R1 = -R2/R11 + j ω/ω1

1 + j ω/ω2

ω = 2 π fω1 = 1/R1C1, ω2 = 1/R2C2

SR1C1 + 1

SR2C2 + 1

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 61

Rochester Institute of TechnologyMicroelectronic Engineering

COMBINATIONS OF FILTERS

2nd Order low-pass, high-pass, bandpass, bandrejection and all pass filter

Vo/Vin = -R2/R1

Generalω1, ω2

Generalω3, ω4

Two General Filters in series1 + j ω/ω1

1 + j ω/ω2

Vo/Vin = -R2R4/R1R3 1 + j ω/ω1

1 + j ω/ω2

1 + j ω/ω3

1 + j ω/ω4

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 62

Rochester Institute of TechnologyMicroelectronic Engineering

SKETCH OF VARIOUS FILTER FREQUENCY RESPONSE

ω1 = ω3 < ω2 = ω4

ω2 = ω4 < ω1 = ω3

ω1 < ω2 < ω4 < ω3

ω2 < ω1 < ω3 < ω4

Vo/Vin = -R2R4/R1R3 1 + j ω/ω1

1 + j ω/ω2

1 + j ω/ω3

1 + j ω/ω4

© May 10, 2009 Dr. Lynn Fuller

Electronic Circuit Casebook

Page 63

Rochester Institute of TechnologyMicroelectronic Engineering

REFERENCES

1. Dr. Fullers webpage http://people.rit.edu/lffeee