반도체기초물성과 웨이퍼제조공정 -...
TRANSCRIPT
![Page 2: 반도체기초물성과 웨이퍼제조공정 - Daumcfs9.blog.daum.net/upload_control/download.blog?f... · 반도체(semiconductor)란? 반도체의의미 도체(conductor)와부도체(insulator)](https://reader030.vdocuments.site/reader030/viewer/2022040321/5e5814275cbb2504d84b919a/html5/thumbnails/2.jpg)
반도체(semiconductor)란 ?
반도체의 의미도체(conductor)와 부도체(insulator) 중간 범위의 전기 전도도를 가지는 물질
반도체의 용도 : 전자 시스템의 부품Pentium chip, memory chip, transistor, diode
반도체의 역할스위치, 정류, 증폭, 전하축적, 발광, 신호감지, 연산, 기억
반도체의 성질적절한 공정으로 부도체에서 도체 범위에서 전도도 변화
주위 여건에 따라 전도도 등의 물성 변화
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반도체 재료의 종류
AlGaAs
AlGaN
HgCdTe
AlGaAsP
InGaAsP
CdSe
ZnS
ZnSe
GaN
GaP
GaAs
InP
InSb
SiC
SiGe
Si
Ge
Ternary, Quarternary
II-VI compound
III-V compound
IV compound
Element
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원자 구조
+1 -1
+14
수소
실리콘 알루미늄
+13
네온
+10
전자 : -1.6X10-19 [C]
핵=양성자+중성자
![Page 5: 반도체기초물성과 웨이퍼제조공정 - Daumcfs9.blog.daum.net/upload_control/download.blog?f... · 반도체(semiconductor)란? 반도체의의미 도체(conductor)와부도체(insulator)](https://reader030.vdocuments.site/reader030/viewer/2022040321/5e5814275cbb2504d84b919a/html5/thumbnails/5.jpg)
고체를 형성하는 원자결합의 종류
공유결합 금속결합이온결합
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고체 내의 원자 배열
단결정(Single Crystal)
다결정(Polycrystalline)
비정질(Amorphous)
![Page 7: 반도체기초물성과 웨이퍼제조공정 - Daumcfs9.blog.daum.net/upload_control/download.blog?f... · 반도체(semiconductor)란? 반도체의의미 도체(conductor)와부도체(insulator)](https://reader030.vdocuments.site/reader030/viewer/2022040321/5e5814275cbb2504d84b919a/html5/thumbnails/7.jpg)
단결정 실리콘
Atomic number:14
Diamond structure
Atomic density:5X1022/cm3
Dielectric constant: 11.9
Energy gap:1.12 eV
Intrinsic EHP:1.5X1010/cm3
Intrinsic ρ : 2.3X105 Ω-cm
+14
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실리콘의 도핑 : 전기전도도 변화
B
P+
P
B-
B
P-type silicon N-type silicon
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전류 : 전하의 이동
AqnvdtdQI d==
dqnvAIJ ==
EEqnJ σµ ==
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고체 내의 전기 전도
E
+ -
E
E
+ -
E
E
+ -
E
EEqnJ σµ ==E
µn
![Page 11: 반도체기초물성과 웨이퍼제조공정 - Daumcfs9.blog.daum.net/upload_control/download.blog?f... · 반도체(semiconductor)란? 반도체의의미 도체(conductor)와부도체(insulator)](https://reader030.vdocuments.site/reader030/viewer/2022040321/5e5814275cbb2504d84b919a/html5/thumbnails/11.jpg)
실리콘 반도체 물성의 변화
도핑 : 반도체에 도펀트 불순물 첨가극미량 첨가로 전기적 성질 변화
1/5,000,000,000 - 1/50
103 ohm-cm - 10-4 ohm-cm
산화 : oxidation이산화규소 : 전기적, 화학적, 기계적 특성 우수
Si + O2 → SiO2
1012-16 ohm-cm
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반도체 개별소자와 집적회로
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DRAM 기술의 발전
구 분 회로선폭 셀 크기 기억용량
16M DRAM 0.5㎛ 3.0㎛² 128장
64M DRAM 0.35㎛ 1.5㎛² 512장
256M DRAM 0.25㎛ 0.7㎛² 2,048장
1G DRAM 0.18㎛ 0.3㎛² 8,192장
4G DRAM 0.13㎛ 0.2㎛² 32,768장
1T DRAM 0.01㎛ 0.001㎛² 8,388,608장
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CPU 기술의 발전
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10,000,000 Tr in 1mmX1mm
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새로운 구조의 FETs
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Process Scope
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ITRS Roadmap
≤ 0.06≤ 0.18≤ 0.18≤ 0.35≤ 0.35Particles(cm-2)
450300300300300Wafer
diameter(nm)
0.71.11.11.11.2Vdd (V)
0.50.91.01.11.2EOT (nm)
725283238L gate(nm)
1865708090Pitch (nm)
20182007200620052004Year
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Device Processed Wafer
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Czochralski Growing System
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Czochralski Growth
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Poly Crystal Silicon
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Growing
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Growing 2
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Cz Ingot
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Cropping
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Cropping 2
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Slicing
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Slicing 2
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Lapping
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Etching
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Heat Treatment
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Polishing
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Polishing 2
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Cleaning
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Packaging
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Silicon On Insulator Wafer
SOI WFSOI WF
Bulk Si : Speed & Heat Issue !Bulk Si : Speed & Heat Issue !
SiliconBOX
Substrate(PW)
High SpeedMPU/MCU Multimedia & Internet(IBM, Motorola)
Low PowerPortable Systems Broadband & RF Device,PDA, Games…,(Philips, TI, NEC)
High SpeedMPU/MCU Multimedia & Internet(IBM, Motorola)
Low PowerPortable Systems Broadband & RF Device,PDA, Games…,(Philips, TI, NEC)
• High Switching Speed
• Soft-error Immunity
• Process Simplification
• Low Power Consumption
• Low Leakage Current
• High Switching Speed
• Soft-error Immunity
• Process Simplification
• Low Power Consumption
• Low Leakage Current
Advantage Advantage Applications Applications
Issue : Cost & QualityIssue : Cost & Quality
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반도체소자의 발전
Modern MOSFET Influenza
Point contact Transistor
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집적회로의 발전
1961 : 최초의 planar IC 현재 : Dothan 140M Trs
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Clean Room의 발전
1968년 현재
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Reference Sites
www.intel.com/research/silicon
http://public.itrs.net/Home.htm
http://www.lgsiltron.co.kr/html/gwfe/gwfe1030101m.htm
www.necst.or.kr