ee 4345 – semiconductor electronics design project

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EE 4345 – Semiconductor Electronics Design Project ansistor Current Sources and Active Lo Anuj Shah Himanshu Doshi Jayaprakash Chintamaneni Nareen Katta Nikhil Patel Preeti Yadav

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EE 4345 – Semiconductor Electronics Design Project. Transistor Current Sources and Active Loads. Anuj Shah Himanshu Doshi Jayaprakash Chintamaneni Nareen Katta Nikhil Patel Preeti Yadav. Current Sources. - PowerPoint PPT Presentation

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Page 1: EE 4345 – Semiconductor Electronics Design Project

EE 4345 – Semiconductor Electronics Design Project

Transistor Current Sources and Active Loads

Anuj Shah

Himanshu Doshi

Jayaprakash Chintamaneni

Nareen Katta

Nikhil Patel

Preeti Yadav

Page 2: EE 4345 – Semiconductor Electronics Design Project

Current sources made by using active devices have come to be widely used in

analog integrated circuits as Biasing elements and as load devices for amplifier

stages

The use of current sources in biasing can result in superior insensitivity of circuit

performance to power supply variations and to temperature

Current Sources

Page 3: EE 4345 – Semiconductor Electronics Design Project

A simple 2-transistor current source

Page 4: EE 4345 – Semiconductor Electronics Design Project

Simple current source

Since Q1 and Q2 have the same base-emitter voltage.

Their collector currents are equal, Ic1=Ic2

Summing currents at the collector of Q1 gives,

Thus, For identical devices Q1 and Q2, the output and the reference

Currents are equal

02 11

f

ccref

III

21 21

c

f

refc I

II

R

onVVII beccrefc

)(2

Page 5: EE 4345 – Semiconductor Electronics Design Project

Collector characteristics for an npn transistor

Page 6: EE 4345 – Semiconductor Electronics Design Project

Norton equivalent representationOf a transistor current source

Thevenin equivalent Representation of a Transistor current source

Page 7: EE 4345 – Semiconductor Electronics Design Project

Simple current source with current gain

Page 8: EE 4345 – Semiconductor Electronics Design Project

The collector current Ic2 is different form the reference Current by a factor [ 1 + ( 2/ßf )]

The emitter current of the transistor Q3 is given by,

Summing currents at the collector of Q1,

Since Ic1 and Ic2 are equal,

Thus, the reference and the output current differ only by a factor of 1/ßf

2

f

c

f

c

f

c III

221 2

0)1(

2 21

ff

ccref

III

ff

refco

III

2

2 21

Page 9: EE 4345 – Semiconductor Electronics Design Project

Widlar current source

Page 10: EE 4345 – Semiconductor Electronics Design Project

Widlar current source

Assuming that the transistors are identical and that Vce2 is high enough

to allow Q2 to operate in the active region,The collector current of Q2

is given by,

T

besc V

VII 2

2 exp

S

cTbe I

IVV 2

2 ln

S

CTbe I

IVV 1

1 ln

Page 11: EE 4345 – Semiconductor Electronics Design Project

Voltage equation around the base-emitter loop gives,

Solving for R2 gives

Neglecting the base currents,

2221 ebebe IRVV

2

1

22 ln

C

C

c

T

I

I

I

VR

1

11 R

VVII beccrefc

Page 12: EE 4345 – Semiconductor Electronics Design Project

Design a widlar current source , given Vcc=15volts. Assume identical transistors.Also, design a 10uA current mirror and compare total resistance required in the two circuits.

Let Iref =1mA

Design of current mirror,

k

A

mA

I

IVR

c

cT 12

10

1ln025.0ln

2

12

MA

vv

I

VVR

ref

becc 45.110

5.015

kmA

vv4.14

1

6.015

Page 13: EE 4345 – Semiconductor Electronics Design Project

Cascode current source with bipolar transistors

Performing a full small-signal analysis on this circuit, including the finite

small-signal resistance of Q1 and Q4

We obtain, Ro =ß0 r0/2

Page 14: EE 4345 – Semiconductor Electronics Design Project

Bipolar Wilson current source

Page 15: EE 4345 – Semiconductor Electronics Design Project

Conventional Differential Amplifier

T

cccmdm V

RIRgA

Resistors are used as load elements

Large Voltage Gain – requires large power-supply voltage and

large values of resistors

Example:

A voltage gain of 500 would require and , Rc would have to be

VRI cc 13

AIc 100 K130

Page 16: EE 4345 – Semiconductor Electronics Design Project

Current Sources as Active Load

Common-Emitter Amplifier with Active Load

Emitter-Coupled Pair with Active Load

Input Offset Voltage of the Emitter-Coupled Pair with

Active Load

Common-Mode Rejection Ratio of the Emitter-Coupled

Pair with Active Load

Common-Source Amplifier with Active Load

Page 17: EE 4345 – Semiconductor Electronics Design Project

]),[( 2121

12

21

BEcecccc

ceccce

cc

VVVII

VVV

II

Fig.Common-emitter amplifier with active load

Page 18: EE 4345 – Semiconductor Electronics Design Project

Transistors NPN PNPInitially at Vi=0 at point 1 Off Saturates As Vi Increases at point 2 On On at point 3 On On at point 4 Saturated Saturated

Fig.npn collector characteristic with pnp Load line superimposed

Page 19: EE 4345 – Semiconductor Electronics Design Project

AP

ce

T

besc

AN

ce

T

isc

V

V

V

VII

V

V

V

VII

2222

111

1exp

1exp

AP

onBE

T

BEscref V

V

V

VIII )(3

23 1exp

02

01

VVV

VV

ccce

ce

Large – Signal Model

Page 20: EE 4345 – Semiconductor Electronics Design Project

]

exp

1[)]([1

)()(0ref

T

is

effAAPAN

ANonBEcc I

VV

I

VVV

VVVV

)(, )(APAN

APANeffA VV

VVVWhere

][][ )(0)( satCEsatCECC VVVV &

)]([ )(0APAN

ANonBECC VV

VVVV

Fig.dc transfer characteristics Of common-emitter Amplifier with active load

Page 21: EE 4345 – Semiconductor Electronics Design Project

Typical values for voltage gain are 1000 to 2000 range.

21

1

021

1211 11)||(

mpnpmnpn

m

o

moomv gg

g

rr

grrgA

R0=(ronop+ropon)

Fig.Small-signal equivalent Circuit for common-emitter Amplifier with active load

Page 22: EE 4345 – Semiconductor Electronics Design Project

Drawback:

The quiescent value of the common-mode output voltage is

very

sensitive to the value of the emitter-biasing current source and

the active-load current sources.

Fig.Emitter-coupled pair withActive load

Page 23: EE 4345 – Semiconductor Electronics Design Project

Fig.Common-mode half-circuit for emitter-coupled pair with active load

Page 24: EE 4345 – Semiconductor Electronics Design Project

Output voltage Voc is very sensitive to the voltage at the base of Q6,

which is influence by Iref2.

Example:

If Iref1 and Iref2 are different by 4% , the output voltage Voc will change by

about 2V.

The same change result from a 1mV mismatch between Q6 And Q7.

Page 25: EE 4345 – Semiconductor Electronics Design Project

This circuit eliminates the common-mode problems but

provides

a single output with much better rejection of common-mode

Input signals.

Page 26: EE 4345 – Semiconductor Electronics Design Project

Large signal behavior model

Load resistance is zero.

Vbias is adjusted in order to keep Q2 and Q4 in forward Active region.

Fig.Active-load stage with output connected to a voltage source

Page 27: EE 4345 – Semiconductor Electronics Design Project

)1)((exp 333

AP

ce

T

besc V

V

V

VII )1)((exp 22

2AN

ce

T

besc V

V

V

VII

)1)((exp 444

AP

ce

T

besc V

V

V

VII

ccbebeccce VVVVV 131

)(3 onBEce VV

21 bebeid VVV

Page 28: EE 4345 – Semiconductor Electronics Design Project

T

id

APAN

APAN

T

ideffA

BEcco

V

V

VV

VV

V

VV

onVVV

2tanh1

2tanh2

)()(

APAN

APANeffA VV

VVV

)(

T

ideffABEcco V

VVonVVV

2tanh2)( )(

)()( satCEonBEocc VVVV

where

Page 29: EE 4345 – Semiconductor Electronics Design Project

Early factor is on the order of 2 * 10-4

AP

T

AN

TAPAN

APAN

TT

effAvd

VV

VVVV

VV

VV

VA

11)(

)(1

opnponpnmpnpnpn

vd llrrgA

A

T

V

VrEarlyFacto ,Where

Page 30: EE 4345 – Semiconductor Electronics Design Project

Device Mismatch Effects:

Presence of Component mismatches within the Amplifier itself and drifts

of component values with Temperature produce differential voltages at the output that are indistinguishable from the signal being amplified.

For Transistor Differential Amplifiers the effect of mismatches is represented by two Quantities,the input offset voltage and the input offset current.

Page 31: EE 4345 – Semiconductor Electronics Design Project

Circuit Containing Mismatches Equivalent Circuit with identically matched devices

Page 32: EE 4345 – Semiconductor Electronics Design Project

1

2

2

1

s

s

c

cTOS I

I

I

IVV

Input Offset Voltage is given by the expression

where mVq

kTVT 26 at 300K

Is represents the Saturation Current

nCBBnA

nisn A

VWN

DqnI

2

where

Wb(VCB) is the base width of the function VCB

NA is the acceptor density in the base and A is the emitter Area

Page 33: EE 4345 – Semiconductor Electronics Design Project

Input Offset Voltage of the Emitter Coupled Pair with Active Load

For a Resistive Load the Input Offset Voltage arises mainly due to the

mismatches in Is in the Input Transistors and from mismatches in the

collector load Resistors.

For an Active Load the input offset voltage results from mismatches in the input Transistors and load devices and from the base current of the load devices.

Page 34: EE 4345 – Semiconductor Electronics Design Project

Emitter Coupled Pair with Active Load

Page 35: EE 4345 – Semiconductor Electronics Design Project

Input Offset Voltage of the Emitter Coupled Pair with Active Load

21 cece VV 43 cece VV and

The Collector Current Ic4 is related to Ic3 by

3

434

s

scc I

III

The Collector Current Q2 is equal to (-Ic4) and thus

3

432

s

scc I

III

The Current Ic1 equals (-Ic3),plus the base currents in the pnp transistors

fcc II

2

131

Page 36: EE 4345 – Semiconductor Electronics Design Project

The input offset voltage is given by

fs

s

s

sToc I

I

I

IVV

2

1ln1

2

4

3

In a Worst Case, the Offset Voltage is 0.2VT

These Circuits have significantly higher offset Voltage than the

Resistively loaded case

The offset Voltage can be reduced by inserting resistors in the Emitters of

Q3 and Q4.

Page 37: EE 4345 – Semiconductor Electronics Design Project

Actively Loaded Emitter Coupled Pair for improved Offset

Page 38: EE 4345 – Semiconductor Electronics Design Project

Common-Mode Rejection Ratio of the Emitter Coupled Pair withActive Load

CMRR is defined as the Magnitude of the ratio of differential to Common Mode Gain.

Provides conversion from a differential signal to a signal that is referenced to ground.This type of Conversion is required in all differential input,single-ended output amplifiers.

Simplest differential to single-ended converter is the resistively Loaded emitter coupled pair.

Page 39: EE 4345 – Semiconductor Electronics Design Project

Differential to Single ended ConversionUsing resistively loaded Emitter coupled Pair

Differential to Single ended ConversionUsing actively loaded Emitter coupled Pair

Page 40: EE 4345 – Semiconductor Electronics Design Project

CMRR

VV

AV ic

iddm

o

2

2The output is given by

1

121 EEmRgCMRR

Transistor Q3 operates at twice the current of Q1 and Q2

333

1

om rgCMRR

CMRR of the resistively loaded stage is the inverse of the of the current

source Transistor when a simple current source is used as a biasing element.

Page 41: EE 4345 – Semiconductor Electronics Design Project

For an active-loaded case

In case of Resistively loaded case ,changes in the common Mode input will cause

changes in the bias current IEE because of the finite output resistance of the biasing

current source.This will cause a change in Ic2 and an identical change in Ic1.

Because of the active load ,the change in Ic1 will produce a change in the currents

flowing in the pnp load transistors ,which produces a change in the collecter current

of Q2.So the output does not change at all in response to common Mode Inputs.

Analytically

1

ic

os

cm

dm

V

V

A

ACMRR

Page 42: EE 4345 – Semiconductor Electronics Design Project

Common-Source Amplifier with Active Load

Common Source Amplifier using an NMOS driver and PMOS activeload.

When M1 and M2 are forward active,the small signal gain is

21

1

oo

mv gg

gA

2

1

mb

mv g

gA

Gain for NMOS depletion-load transistor

Page 43: EE 4345 – Semiconductor Electronics Design Project

Common-Source Amplifier with p channel transistorCurrent source load

Transfer Characteristic

Page 44: EE 4345 – Semiconductor Electronics Design Project

I-V Characteristic of n-channel depletion mode load transistor

Page 45: EE 4345 – Semiconductor Electronics Design Project

Common Source Amplifier with depletion mode transistor load and dc transfer characteristic

Page 46: EE 4345 – Semiconductor Electronics Design Project

Common Source Amplifier with Enhancement-Mode load

2

1

2

1

/

/

LW

LW

g

gA

m

mv

Common-Source Amplifier with enhancement-mode load and transfer characteristic

Page 47: EE 4345 – Semiconductor Electronics Design Project

Source Coupled Pair with Active load

42

1

oo

mv gg

gA

Widely used in CMOS Circuit Design

Page 48: EE 4345 – Semiconductor Electronics Design Project

References:

Analysis and Design of Analog Integrated Circuits, 3rd Edition by Paul R.Gray and Robert G.Meyer.

Analog integrated circuit design,1st edition by David Johns and Ken Martin

Electronics,2nd Edition, by Allan R.Hambley