達格美電子(香港)有限公司 · created date: 20010730193653z
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NONVOLATILE ELECTRONICS, INC.
MagIC
Magnetic And Silicon Materials
On One Integrated Circuit
NONVOLATILE ELECTRONICS, INC.
• NVE Leads GMR Technology/Applications– 11 years Experience (Since Founding in 1989)– Over $30M Development
• Competitive Government Contracts - $20M• Commercial Customers - $4.6M• Private Investment - $4.5M
– 32 Patents Issued, Pending, Or Licensed • World’s First GMR Products (1995)• World’s First GMR MagICTM Product (1997)• ISO 9001 qualified
NVE is The World Leader In MagICTM
NONVOLATILE ELECTRONICS, INC.
• Sensors - NVE Established Products– 20,000 units per month (1999)– Wheel Speed and Position (Platform qualified for ABS)– Electric Current
• Isolators - NVE New Products– Communications– Industrial Controls
• Nonvolatile Memory - NVE Next Generation− Data Security without Power– Magnetoresistive Random Access Memory (MRAM)
NONVOLATILE ELECTRONICS, INC.
Isolator: Design to Test
Silicon Circuit Design
GMR, Metalisation, etc Wafer Probe
Die Packaging
0.5um CMOS
Final Test
NVE TSMC
NVE (USTC) NVE
NVECEI
NONVOLATILE ELECTRONICS, INC.
R
~8x10-9m
GMRMetallic Thin Films:
Magnetic / Non-Magnetic
NONVOLATILE ELECTRONICS, INC.
IL710HIGH SPEED DIGITAL ISOLATOR
TRUTH TABLE
OEVIN VO
LHLH
LLHH
LHZZ
1
H2
3
4 5
6
7
8VDD1 VDD2
VI
VO
GND1 GND2
NC
VOE
IsolationBarrier
NONVOLATILE ELECTRONICS, INC.
Spin Valve Resistors
Field Producing Coil
IinMagnetic Field - H
( H α Iin )
Isolation Dielectric
Memory Mode Digital Spin Valve Isolator Structure
Memory Mode Digital Spin Valve Isolator Schematic
Spin Valve Resistor Bridge
I in
Field Producing Coil
Galvanic Isolation by Thick Film Dielectric
Signal Transmitted by Magnetic Field
H Vspin - valve
Vcc
NONVOLATILE ELECTRONICS, INC.
Isolated Output VoltageVin
Input Voltage Signal
Schematic of Memory Mode Spin Valve Digital Signal Isolator
TimeMag Field - H ( α Iin)
Vspin valve (α Rout)
Spin Valve Response
IinOutput Amp Circuit
Coil Current Signal
V to I Driver Circuit
Vout
TimeTime
Coil Generates Magnetic Field
Remnant Hi-State
RemnantLo-State
Magnetoresistance Response of Actual Patterned Spin Valve Isolator Structure
-150
-100
-50
0
50
100
-60 -40 -20 0 20 40 60
Coil Input Current (mA) - Proportional to Magnetic Field H
Brid
ge O
ffset
Vol
tage
- m
V
forward tracereverse trace
GMR Isolator Transfer Function
NONVOLATILE ELECTRONICS, INC.
Die to Die Wirebonds
Die 1 - Driver Circuit
Die 2 - Isolator Structure and Integrated Amplifier
SOIC Package
NONVOLATILE ELECTRONICS, INC.
Magnetic Isolator - Schematic
NONVOLATILE ELECTRONICS, INC.
Die Photograph4-channel IsolatorSize: 1.1mm x 1.9mm
NONVOLATILE ELECTRONICS, INC.
Propagation Delay
Reference
IL710
HCPL-0720
Reference
IL710
HCPL-0720
NONVOLATILE ELECTRONICS, INC.
Positive Edge Skew
2 x HCPL-0720 2 x IL710
NONVOLATILE ELECTRONICS, INC.
Negative Edge Skew
2 x HCPL-0720 2 x IL710
NONVOLATILE ELECTRONICS, INC.
No More Speed Problems
• 4 x Speed • 2 x Transient Immunity
• 1/4 Prop Delay • 1/5 Skew• 1/4 PWD
NONVOLATILE ELECTRONICS, INC.
RS-485
75ALS176
• 16 Pin SOP Wide Body Package• Proprietary Bi-directional GMR Isolator ASIC • TI 75ALS176 RS-485 Transceiver
ProprietaryBi-directional GMR
Isolator ASICsTI RS-485 Driver
Widebody SOP 16 Split Lead-
frame
GMR Isolated RS 485 Module
NONVOLATILE ELECTRONICS, INC.
1
H2
3
4 5
6
7
8VDD1 VDD2
VI
VO
GND1 GND2
NC
VOE
IsolationBarrier
IL711
GA
LVA
NIC
ISO
LATI
ON
1IN
2IN
1OUT
2OUT
IL712
GA
LVA
NIC
ISO
LATI
ON
2IN
1IN 1OUT
2OUT
RTSAS
GA
LVA
NIC
ISO
LATI
ON
TxD
RxDA
B
RTS DE
D
R
Y
Z
RE
GA
LVA
NIC
ISO
LATI
ON
RTS
TxD
RxD
RTSAS
A
B
DE
D
R
IL485
IL422
First New Products
IL710
REN
1IN
2IN
1OUT
2OUT
3IN
4IN
3OUT
4OUT
IL715
1IN
2IN
1OUT
2OUT
4IN
3IN
4OUT
3OUT
IL716
4IN
3IN 3OUT
4OUT
1IN
2IN
1OUT
2OUT
IL717
NONVOLATILE ELECTRONICS, INC.
External Magnetic Field Sensitivity
8.0*2 RI sinαH
π ≈ (Where I is amps, R is cm & H is Gauss)
Current = 500A
H field (r=2cm) ~ 50 Gauss
• Tolerant to 50 Gauss normal to plane of device• Design improvements have increased it to ~ 100 Gauss• Field produced by current is not be a problem• Equation is as follow:
• Current Draw (amps) Safe Separation Distance500 2.0 cm.10 0.4 mm
Hmax = 50Gauss
Hmax = 50 Gausssin α
α