ece122 – 30 lab 2: nand gate design using cmos

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University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE122 – 30 Lab 2: NAND gate design using CMOS Ritu Bajpai September 11, 2008

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The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering. ECE122 – 30 Lab 2: NAND gate design using CMOS. Ritu Bajpai September 11, 2008. Propagation Delay. - PowerPoint PPT Presentation

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Page 1: ECE122 – 30 Lab 2: NAND gate design using CMOS

The George Washington UniversitySchool of Engineering and Applied Science

Department of Electrical and Computer Engineering

ECE122 – 30

Lab 2: NAND gate design using CMOS

Ritu Bajpai

September 11, 2008

Page 2: ECE122 – 30 Lab 2: NAND gate design using CMOS

Propagation Delay

• Propagation Delay is the amount of time it takes a change of input to appear as a change on the output.

• Propagation Delay is measured from the 50% point on the input signal to the 50% point on the output.

Input

Output

tpHL

Page 3: ECE122 – 30 Lab 2: NAND gate design using CMOS

Transition time

• High-low and low high transition times at the output of a gate are defined as tHL and tLH between the 10% and 90% points.

tLH

10%90%

tHL

10%90%

Page 4: ECE122 – 30 Lab 2: NAND gate design using CMOS

Gate Delay

• The load capacitance severely affects the gate delay.

Inv1

Inv2

Page 5: ECE122 – 30 Lab 2: NAND gate design using CMOS

Objective for our simulation

• Create a NAND gate using p and n MOSFET and testing its performance.

• Testing the performance of a NAND gate from SCMOS library.

• Comparing the performance of the two NAND gates.

Page 6: ECE122 – 30 Lab 2: NAND gate design using CMOS
Page 7: ECE122 – 30 Lab 2: NAND gate design using CMOS

Note parameters W=2.50u and L=0.25u

Page 8: ECE122 – 30 Lab 2: NAND gate design using CMOS
Page 9: ECE122 – 30 Lab 2: NAND gate design using CMOS

NAND GATE

TEST BENCH FOR THE NAND GATE

NAND GATE

TEST BENCH FOR NAND GATE

NAND GATE

TEST BENCH FOR NAND GATE

Page 10: ECE122 – 30 Lab 2: NAND gate design using CMOS
Page 11: ECE122 – 30 Lab 2: NAND gate design using CMOS

tpHL

Page 12: ECE122 – 30 Lab 2: NAND gate design using CMOS

Record the propagation delay

• Record tpHL and tpLH for the NAND gate.

• Record the waveform for the same.

• Next we will use the same test bench for the NAND gate from the LogicGates library

• Record the values of tpHL and tpLH in 2 cases.

Page 13: ECE122 – 30 Lab 2: NAND gate design using CMOS

Replace your NAND gate by the NAND gate in the library LogicGates

Page 14: ECE122 – 30 Lab 2: NAND gate design using CMOS

Analysis/Result

• Is the rise time and fall time of each gate same, if no then why?

• Is the rise time and fall time of both the gates similar to each other, if no then what could be the probable reasons for the difference?

Page 15: ECE122 – 30 Lab 2: NAND gate design using CMOS

Analysis/Result

• Repeat the simulation to create a NOR gate using CMOS.

• In the test circuit, replace your NOR gate by the NOR gate in SCMOS library.

• Record the waveform in the two cases and make the similar observations as you made for NAND gate.