ece-305: spring 2018 final exam review
TRANSCRIPT
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ECE-305: Spring 2018
Final Exam Review
Professor Peter BermelElectrical and Computer Engineering
Purdue University, West Lafayette, IN [email protected]
Pierret, Semiconductor Device Fundamentals (SDF)Chapters 10 and 11 (pp. 371-385, 389-403)
4/26/2018 Bermel ECE 305 S18 1
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BJT Symbols and Conventions
Bermel ECE 305 S182
Poly emitter
Low-doped base
Collector dopingoptimization
N+
P
N
Symbols
NPN PNP
Collector
Emitter
Base
Collector
Emitter
Base
IC+IB+IE=0
VEB+VBC+VCE=0
E
B
C
4/26/2018
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BJT Current Gain
Bermel ECE 305 S183
P+N
P
C
E E
B
VEB (in)
ICIBCommon Emitter current gain ..
CDC
B
I
I =
Common Base current gain ..
P+
N PE
IE IC
C
BB
VEB(in) VCB(out)
CDC
E
I
Ia =
C CDC
B E C
I I
I I I = =
- 1DC
DC
a
a=
-
4/26/2018
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Current Gain
Bermel ECE 305 S184
4/26/2018
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5
essence of current gain
( )2, 1BEp i E q
E
BV
E
qD ne
NI
W» -
N+
N
P
( )2, 1BEi B
B
VE
qn
B
nqDe
NI
W» -
Input Response Input
Response
VBE VBC
Bermel ECE 305 S184/26/2018
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Emitter Current
6
( ) ( )2 2,
,
0
,1 1=
= = - + -- BC BBE Bi B i B qV k TqV k Tnn E n
B B B Bx
nn nqdn
J qDd
D qDe e
W W Nx N
( ),
0'
2
1
=
= - = - -BEp qVi
n D
p E p
x
D ndpJ
d W ND eq
x
VBE
VBE
, ,= +p E nE EJ J J
Bermel ECE 305 S18
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collector current: forward active region
n+emitter
pbase
ncollector
n+
FB RB
IE ICIEn
IEpIE = IEn + IEp
aT IEn
IC » IEn
IB = IEp
IEn = qAEni2
NAB
æ
èçö
ø÷DnWB
eqVBE /kBT
IEp = qAEni2
NDE
æ
èçö
ø÷Dp
WE
eqVBE /kBT
IC = aT IEn
IC =aFIF0 eqVBE kBT -1( )
IC =aTg F IE
aF = aTg F
Bermel ECE 305 S184/26/20187
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Ebers-Moll model
n+emitter
pbase
ncollector
n+
IE ICIEn ICn
IEp
Bermel ECE 305 S18
ICp
IC VBE ,VBC( ) = aF IF0 eqVBE kBT -1( ) - IR0 eqVBC kBT -1( )
IE VBE ,VBC( ) = IF0 eqVBE kBT -1( ) -a RIR0 eqVBC kBT -1( )
4/26/2018
IB VBE ,VBC( ) = IE VBE ,VBC( ) - IC VBE ,VBC( )
8
FB RB
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Ebers-Moll model
Bermel ECE 305 S18
IC VBE ,VBC( ) = aF IF0 eqVBE kBT -1( ) - IR0 eqVBC kBT -1( )
IE VBE ,VBC( ) = IF0 eqVBE kBT -1( ) -a RIR0 eqVBC kBT -1( )
aF IF0 = a RIR0
IF0 = qAEni2
NAB
æ
èçö
ø÷DnWB
+ qAEni2
NDE
æ
èçö
ø÷Dp
WE
aF = aTg F
a R = aTg R IR0 = qAEni2
NAB
æ
èçö
ø÷DnWB
+ qAEni2
NDC
æ
èçö
ø÷Dp
WC
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Gummel Plot and Output Characteristics
10
2 2, , //( 1) ( 1)BCBEi B i B q kTq kTn n
B B B B
C VVn nqD qDe e
A W N W N
I- - + -�
2, /( 1)BEp i E V kT
E E
B qqD n
eA W N
I= -
CDC
BI
I =
DCCommon emitter Current GainVBE
Bermel ECE 305 S184/26/2018
=
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maximizing gains in BJTs
Bermel ECE 305 S18
2,
2,
i Bn E Edc
B p i E B
nD W N
W D n N »
NE
NB
NC
Emitter doping: As high as possible withoutband gap narrowing
Base doping: As low as possible, withoutcurrent crowding, Early effect
Collector doping: Lower than base dopingwithout Kirk Effect
Base Width: As thin as possible withoutpunch through (~1 mm in ‘50s, 200 Å now)
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ND++
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How to make better Transistor
Bermel ECE 305 S1812
2,
2,
i Bn E E
B p i E B
nD W N
W D n N »
Classical Shockley Transistor
Heterojunction Bipolar Transistor
Graded Base transport
Polysilicon Emitter
4/26/2018
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poly-silicon HBT emitter
Bermel ECE 305 S18
N+
P N
SiGe intrinsic base Dielectric trench
N+P+
N
P-
N-N+
CollectorEmitterBase
N+
Poly-silicon
emitter
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Bermel ECE 305 S18
SiGe HBT applications
1) optical fiber communications-40Gb/s…….160Gb/s
2) Wideband, high-resolution DA/AD convertersand digital frequency synthesizers
-military radar and communications
3) Monolithic, millimeter-wave IC’s (MMIC’s)
-front ends for receivers and transmitters
future need for transistors with 1 THz power-gain cutoff freq.
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New equations on equation sheet
4/26/2018 Bermel ECE 305 S18 15
Bipolar transistors: (assuming NPN, short emitter, base, and collector)Ebers-Moll Equations:
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Practice Question 1
4/26/2018 Bermel ECE 305 S18 16
Region of Operation:A. Forward ActiveB. Inverse Active C. PinchoffD. SaturationE. Cutoff
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Practice Question 2
4/26/2018 Bermel ECE 305 S18 18
Region of Operation:A. Forward ActiveB. Inverse Active C. PinchoffD. SaturationE. Cutoff
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Practice Question 3
4/26/2018 Bermel ECE 305 S18 20
Region of Operation:A. Forward Active: ___B. Inverse Active: ___C. Pinchoff : ___D. Saturation : ___E. Cutoff : ___
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Practice Question 4
4/26/2018 Bermel ECE 305 S18 22
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Practice Question 5
4/26/2018 Bermel ECE 305 S18 24
Which of the following would reduce “base width modulation” (i.e. the Early effect) and, therefore, increase the output resistance?a) Increasing the emitter doping.b) Increasing the collector doping.c) Increasing the base width.d) Increase the emitter thickness.e) Decrease the base doping.
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Practice Question 6
4/26/2018 Bermel ECE 305 S18 26
Consider the transistor circuit below
What is the region of operation for this transistor if the base voltage VA is positive?
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Practice Question 7
4/26/2018 Bermel ECE 305 S18 28
Write down the Ebers-Moll equations for the transistor circuit below:
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Fall 2015: Multiple Choice
4/26/2018 Bermel ECE 305 S18 30
1 (8 points). Which of the following would increase the
collector breakdown voltage in a BJT?
a. Increasing the emitter doping
b. Increasing the base doping
c. Increasing the collector doping
d. Decreasing the collector width
e. Decreasing the collector doping
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Fall 2015: Multiple Choice
4/26/2018 Bermel ECE 305 S18 32
2 (8 points). How are the PN junctions biased in the forward active
region of an NPN BJT?
a. Base-collector: forward biased Emitter-base: forward biased
b. Base-collector: forward biased Emitter-base: reverse biased
c. Base-collector: reverse biased Emitter-base: forward biased
d. Base-collector: reverse biased Emitter-base: reverse biased
e. Base-collector: forward biased Emitter-base: biased in breakdown
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Fall 2015: Multiple Choice
4/26/2018 Bermel ECE 305 S18 34
3 (8 points). What would be considered good values for
��� and ���, respectively, in a BJT?
a. 0.1 and 0.11
b. 0.5 and 1
c. 0.99 and 99
d. 3 and 1.5
e. 20 and 1.052
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Fall 2015: Multiple Choice
4/26/2018 Bermel ECE 305 S18 36
4 (8 points). For large gain in a bipolar transistor, the emitter
doping must be …. ?
a. Larger than the base doping only
b. Smaller than the base doping only
c. Larger than the collector doping only
d. Larger than both base and collector doping
e. It does not matter
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Fall 2015: Multiple Choice
4/26/2018 Bermel ECE 305 S18 38
5 (8 points). How can a heterojunction bipolar transistor be
designed to improve ���?
a. Low bandgap material in the base region
b. Low bandgap material in the emitter region
c. High electron affinity material in the base region
d. Low breakdown voltage material in the collector region
e. High bandgap material in the base region
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Fall 2015: Part II
4/26/2018 Bermel ECE 305 S18 40
Consider the NPN BJT made of silicon, depicted below. Assume that it is in the forward active region, with IC=10 mA, doping concentrations ND,E=1018/cm3, NA,B=1017/cm3, and ND,C= 1016 /cm3; thicknesses WE=0.5 mm,WB=0.25 mm, and WC=2 mm; and diffusion constants Dp,E=2 cm2/s, Dn,B=20 cm2/s, and Dp,C=12 cm2/s, and Lb=1 mm . The cross-sectional area A=1 mm2. Assume that recombination within the BJT is small (i.e., diffusion lengths are much larger than the thicknesses of each layer).
a) What is the emitter injection efficiency γF?b) What is the base transport factor αT?c) What is the common base current gain αDC?d) What is the emitter gain βF (aka βdc)?e) What is the forward saturation current density IF0?
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Fall 2015: Part III
4/26/2018 Bermel ECE 305 S18 46
Consider the crystalline silicon-based bipolar junction transistor (BJT) depicted below. The shaded regions represent the depletion regions, while white regions may be treated as having zero electric field (in the depletion approximation). Assume that the doping concentrations ND,E=1018/cm3, NA,B=1017/cm3, and ND,C= 1016 /cm3. AssumeLD≫WE and LD≫WC.
a) Sketch the excess minority carrier concentrations (in all white regions) in forward active mode biasing.
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Fall 2015: Part III
4/26/2018 Bermel ECE 305 S18 48
Consider the crystalline silicon-based bipolar junction transistor (BJT) depicted below. The shaded regions represent the depletion regions, while white regions may be treated as having zero electric field (in the depletion approximation). Assume that the doping concentrations ND,E=1018/cm3, NA,B=1017/cm3, and ND,C= 1016 /cm3. AssumeLD≫WE and LD≫WC.
b) Sketch the excess minority carrier concentrations (in all white regions) in inverted mode biasing.
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Fall 2015: Part III
4/26/2018 Bermel ECE 305 S18 50
Consider the crystalline silicon-based bipolar junction transistor (BJT) depicted below. The shaded regions represent the depletion regions, while white regions may be treated as having zero electric field (in the depletion approximation). Assume that the doping concentrations ND,E=1018/cm3, NA,B=1017/cm3, and ND,C= 1016 /cm3. AssumeLD≫WE and LD≫WC.
c) Sketch the excess minority carrier concentrations (in all white regions) in cutoff mode biasing.
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Fall 2015: Part III
4/26/2018 Bermel ECE 305 S18 52
(Questions d and e are based on the following information) The minority carrier concentrations in the quasineutral regions of a pnp BJT are given in the diagram below.
d) Estimate the sign of the collector-base and emitter-base biases, and deduce the operating mode of this BJT.
e) Calculate the magnitude of the collector-base bias VCB.
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Thank you for taking ECE 305
Good luck on your Final Exams!