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The 2001 IEEE Inter-national Electron DevicesMeeting will be held atthe Washington Hiltonand Towers Hotel, Wash-ington, D.C., December3 to 5, 2001. IEDM isthe premier conferencefor presenting advancesin silicon and compoundsemiconductor devicesand processes. It is theannual technical meetingof the IEEE Electron Devices Society, rotating in location between Washington,DC and San Francisco. IEDM is the largest semiconductor device conferencein the world, drawing attendees from Europe, Asia, and the US. High qualitycontributions from industry, academia, and government are all presented atthe conference.

The heart of the IEDM is the technical program. No other meeting pre-sents as much leading work in so many different areas of microelectronics.The IEDM offers students, scientists, and engineers an opportunity to hearabout the latest work being done in their disciplines and related areas andaffords them the opportunity to speak directly with the experts working inthese areas.

The meeting highlights include three plenary presentations by prominentexperts, twenty-one invited talks on all aspects of advanced devices andtechnologies, two evening panel discussions on future challenges to theindustry, and the presentation of IEEE/EDS prestigious awards.

The areas to be covered in this year’s conference are:

• CMOS Devices,• CMOS and Interconnect Reliability,• Detectors, Sensors, and Displays,• Integrated Circuits and Manufacturing,• Modeling and Simulation,• Process Technology,• Quantum Electronics and Compound Semiconductor Devices,• Solid State Devices, and• A new session on “Emerging Technologies”

EDS

Contributions WelcomeReaders are encouraged to submit news items con-cerning the Society and its members. Please sendyour ideas/articles directly to either the Editor-in-Chief or appropriate Editor. All contact informationis listed on the back cover page. Whenever possi-ble, e-mail is the preferred form of submission.

Newsletter Deadlines

Issue Due DateJanuary October 1stApril January 1stJuly April 1stOctober July 1st

October 2001Vol. 8, No. 4 ISSN:1074 1879

Editor-in-Chief: Krishna Shenai

®

Your Comments SolicitedYour comments are most welcome. Please write directly to the Editor-in-Chiefof the Newsletter at the address given on the back cover page.

Table of ContentsUpcoming Technical Meetings...........................1

• 2001 IEDM • 2001 IEEE-NANO• 2001 SISC • 2001 IRW• 2001 GaAs IC

Message from the President ..............................2Society News ..................................................8• Spring 2001 EDS AdCom Meeting Summary• EDS Region 10 Chapters Meeting Summary• Independent Short Course on High-K Dielectrics

a Hit• IEEE Election – Did You Vote Yet?• 2000 EDS Paul Rappaport Award• EDS Permanent Membership Option• Annual CD-ROM Packages Available to EDS

Members• Congratulations to the EDS Members Recently

Elected to IEEE Senior Member Grade• EDS Distinguished Lecturer Program - Lecturers

Residing in Central, Western & South WesternUSA and Latin America (Regions 4-6 & 9)

• EDS Membership Fee Subsidy Program (MFSP)• On-Line Access to IEEE Journals Available to EDS

MembersRegional and Chapter News...........................17EDS Meetings Calendar .................................22

IEEE ElectronDevices Society

Newsletter2001 IEEE International Electron

Devices Meeting (IEDM)

continued on page 3

IEEE Electron Devices Society Newsletter ❍ October 2001

2

Electron Devices SocietyPresidentCary Y. YangSanta Clara UniversityTel: +1 408 554 6814E-Mail: [email protected]

Vice PresidentSteven J. HilleniusAgere SystemsTel: +1 908 582 6539E-Mail: [email protected]

TreasurerApril S. BrownGeorgia Institute of TechnologyTel: +1 404 894 5161E-Mail: [email protected]

SecretaryJohn K. LowellPDF Solutions, Inc.Tel: +1 972 889 3085E-Mail: [email protected]

Sr. Past PresidentLouis C. ParrilloMotorola, Inc.Tel: +1 512 895 2002E-Mail: [email protected]

Jr. Past PresidentBruce F. GriffingDupont OptolithographyTel: +1 512 310 6550E-Mail: [email protected]

EDS Executive DirectorWilliam F. Van Der VortIEEE Operations Center445 Hoes LaneP.O. Box 1331Piscataway, NJ 08855-1331Tel: +1 732 562 3926Fax: +1 732 235 1626E-Mail: [email protected]

Awards ChairAlfred U. Mac RaeMac Rae TechnologiesTel: +1 908 464 6769E-Mail: [email protected]

Educational Activities ChairIlesanmi AdesidaUniversity of IllinoisTel: +1 217 244 6379E-Mail: [email protected]

Meetings ChairKenneth F. GallowayVanderbilt UniversityTel: +1 615 322 0720E-Mail: [email protected]

Membership ChairJames B. KuoUniversity of WaterlooTel: +1 519 888 4025E-Mail: [email protected]

Publications ChairRenuka P. JindalAgere SystemsTel: +1 908 582 0438E-Mail: [email protected]

Regions/Chapters ChairHiroshi IwaiTokyo Institute of TechnologyTel: +81 45 924 5471E-Mail: [email protected]

IEEE Newsletter CoordinatorAndrea WatsonIEEE Operations Center445 Hoes LaneP.O. Box 1331Piscataway, NJ 08855-1331Tel: +1 732 562 6345Fax: +1 732 981 1855E-Mail: [email protected]

IEEE Electron Devices Society Newsletter is published quarterly by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc.Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in the Society feefor each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address changesto IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.Copyright © 2001 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed for directcommercial advantage, and the title of the publication and its date appear on each photocopy.

EDS ADCOM ELECTED MEMBERS-AT-LARGE

Term Expires:

2001 2002 *2003

A. S. Brown (2) C. L. Claeys (1) I. Adesida (2)T. P. Chow (2)) J. A. Dayton, Jr. (1) T. Hiramoto (1)K. F. Galloway(1) M. Fukuma (1) L. Lunardi (1)S. J. Hillenius (1) K. M. Lau (1) A. A. Santos (2)C. Jagadish (1) K. Lee (1) S. C. Sun (2)M. A. Shibib (2) M. L. Ostling (1) H. S. P. Wong (1)R. Singh (1) D. L. Pulfrey (1) P. K. L. Yu (2)

K. Shenai (2)

Number in parenthesis represents term.* Members elected 12/00

As I approach the end of my term, which happens to coin-cide with the end of the first half-century of our Society, I feelmost fortunate to have the opportunity to report to you progressof new initiatives for the past year. Detailed narratives on someof these initiatives are reported elsewhere in this issue or inupcoming issues of this Newsletter.

The Graduate Student Fellowship Program was launched andthree awards were made this year. The pool of applicants hadoutstanding credentials and I commend the Graduate FellowshipSubcommittee, chaired by Arlene Santos, and the judges fortheir dedicated efforts since the program’s inception. We extendour heartfelt congratulations to the recipients of these awards,Tusharkanti Ghosh, Sergei Kucheyev, and Yee-Chia Yeo, fortheir superb qualifications and best wishes for future success intheir chosen field.

Five live Short Courses on four different topics have beenoffered under the Independent Short Courses Program thatbegan in 2000. Attendance to these events ranged from 12 to113. Video tapes of the first three courses are now availablethrough the IEEE Education Office. Our Education Chair, I.Adesida (Ade), is leading an effort to re-structure this program,and to include more direct involvement from industry.

Ade is also overseeing a consolidation of the DistinguishedLecturers Program. Issues related to acceptable level of activityfor each lecturer, access by chapters, and visibility of the pro-gram are being addressed by his committee.

The new initiatives of the Membership Committee, chaired byJames Kuo, have resulted in a 3% net growth in the twelve-month period ending June 30, 2001. The most notable of theseare the membership fee subsidy program for low-income individ-uals and the senior member promotion program to further bene-fit our chapters. Both of these are parallel to existing IEEE-wideprograms for membership growth.

The implementation of a centralized system for manuscriptprocessing for Electron Device Letters and Transactions on Elec-tron Devices has been completed. We are all grateful to the cur-rent and previous Publications Chairs, Renuka Jindal and SteveHillenius, and the Executive Office staff for making this a reality.Preliminary results for Electron Device Letters (first publication touse the new system) show that the average manuscript turn-around time has been reduced significantly.

Message from the President

continued on page 14

Cary Y. Yang

CMOS Devices focuses on devicephysics, novel MOS device structures,CMOS scaling issues, high performanceand low power devices. Other topics ofinterest include high-frequency, analogand noise behavior of MOS devices, SOIdevice issues and device measurementand characterization. This session willprovide attendees with the latestadvances in CMOS devices as well asprojections of future device architectures.

CMOS and Interconnect Reliability willcover all aspects of CMOS reliabilityincluding both front-end and back-end pro-cessing issues. Topics will span a largespectrum including ultra thin gate dielec-tric wearout and breakdown, interconnectreliability, ESD, and soft error issues. Inaddition, reliability issues for BiCMOSand SOI technologies will be addressed.

Detectors, Sensors and Displays playa major role in information delivery. Ses-sions in this area will cover criticaldevices, structures, and integration forimaging, displays, detectors, sensors,and micro electromechanical systems(MEMS). Included in these sessions willbe CCDs, TFTs, and organic, amor-phous, and polysilicon devices. Invitedpapers in emerging areas such as organ-ic materials used for photonic applica-tions, molecular electronics for biologicalapplications and micro mechanical pro-grammable diffraction gratings will befeatured this year.

The Integrated Circuits and Manufac-turing sessions will cover advances inintegrated circuits, novel memory cellconcepts, and full process integrationand manufacturing for memory, logicand mixed mode applications includinghigh performance architectures, multi-function integrated circuits, low powercircuits, RF and mixed signal technolo-gies. Other topics of interest include tech-nology for failure analysis and yieldmodeling as well as process control andmanufacturing methodologies.

Modeling and Simulation are importantaspects of electronic device development.Sessions in this area will deal with analyti-

cal, numerical, and statistical approachesto modeling electron devices, isolation andinterconnect technologies. Topics willinclude circuit and device level modeling,fabrication processes and equipment mod-eling, algorithms, characterization, andparameter extraction. Invited talks on com-pact modeling for deep submicron CMOSand full quantum simulation, design andanalysis of silicon tunnel devices, HEMTs,and RTDs will be presented.

The Process Technology sessions willcover front-end and back-end modulesfor fabrication of CMOS, memory, andBiCMOS devices. The sessions will coverlithography, etching, planarization, silici-dation, shallow junction formation, inter-connect technologies, and new materialsincluding high- and low-k dielectrics.

The IEDM conference provides a forumfor introducing new device concepts inelectronics and photonics. This year theQuantum Electronics and Compound Semi-conductor Devices sessions will feature thelatest results in compound semiconductorand wide-bandgap materials and devices.Topics will cover a wide range of discretedevices including FETs, HBTs, lasers, andphotodetectors. Other topics being fea-tured this year are self-assembly, nano-and molecular scale devices, optical inter-connects, integrated optoelectronics, andphotonic integrated circuits. Invited talks onsingle electron memory devices, widebandgap RF devices, and antimonide het-erostructures for millimeter wave applica-tions will be presented.

Solid State Devices are increasingly indemand for varied applications in areasranging from the automotive to communi-cation industries. Sessions in this area willcover integrated power/current/voltagedevices, silicon and silicon germaniumbipolar transistors, novel analog and digi-tal devices and technologies, integratedRF components, and single electrondevices in silicon and silicon germanium.Featured this year will be invited paperson semiconductor technologies for high-speed optical networks and ferroelectricrandom access memories.

The Emerging Technologies session isa special feature of the conference, whichis being brought back this year. The ses-sion is entitled “Interconnecting Devices,”

and consists entirely of invited talks fromexperts in the field. This year’s chosen sub-ject is of critical importance today, due tothe increasing need for very high band-width operation by high-speed computing,networking, and Internet applications. Thetalks will cover a broad range of emerg-ing technologies, including optical andwireless interconnects and novel three-dimensional chip and wiring structures, allaimed to address the challenges of high-speed communication both across a chipand between chips. In addition to givingthe IEDM attendees a good overview offuture technologies, the session will alsoserve as a launching pad for a livelydebate on the topic in the evening panelsession to which it is linked: “Interconnect-ing Devices for the Terabit Era.”

Short CoursesA popular feature of the IEDM is the

short course program held the Sundaybefore the conference formally begins.The two short courses that make up theprogram will be offered on Sunday,December 2. They provide attendeeswith the opportunity to learn about newemerging areas and to benefit fromdirect contact with the lecturers who areexperts in the field. Introductory materialfor general audiences is also included.

This year, the Short Course subjectswill be “Device and Process Technologyfor sub-70 nm CMOS,” organized by Dr.Suresh Venkatesan of Motorola and“Advanced Memory Technology andArchitecture,” organized by Dr. KunioNakamura from NEC.

Plenary PresentationsThe IEDM conference will include three

plenary presentations dealing with futuretrends in semiconductor technologies. Dr.Johan Daneels, President and CEO ofAlcatel Microelectronics will discuss “Howdeep submicron technology will boostInternet appliances in the digital home net-work.” Dr. Ananth Dodabalapur of BellLaboratories, Lucent Technologies will talkon “Organic and Polymer Active Devices,”and Dr. Yukou Mochida of Fujitsu Labora-tories will describe the “Future Directionsand Technology Requirements of WirelessCommunications.”

October 2001❍ IEEE Electron Devices Society Newsletter

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Upcoming Technical Meetings

IEDM (continued from page 1)

Panel SessionsIEDM’01 will continue the tradition of

holding evening panel sessions on importanttopics of interest to the electronics communi-ty. This year the topics will be: “Beyond theRoadmap: 10 nm Scale Devices?” moderat-ed by Prof. Dimitri Antoniadis, and “Inter-connecting Devices for the Terabit Era,”moderated by Dr. James Hutchby.

Late News PapersThe submission date for regular

papers has already passed but a limitednumber of late-news papers will beaccepted for presentation. If you have

recent outstanding new developmentsyou wish to publish at the conference,please submit by September 13, oneoriginal of your proposed paper (includ-ing artwork) and 25 copies to PhyllisMahoney, IEDM, 101 Lakeforest Boule-vard, Suite 400B, Gaithesburg, MD20877, USA. Accepted late-news papersand accompanying figures will be print-ed as received in the Technical Digest.

Further InformationFor registration and other information,

visit the IEDM 2001 Home Page on theWorld Wide Web at http://www.ieee.

org/conferences/iedm, or contact Con-ference Manager Phyllis Mahoney, Suite400B, 101 Lakefront Boulevard, Gaithes-burg, MD, 20877, USA; TEL: (301) 527-0900, ext. 103; FAX (301) 527-0994;or E-Mail: [email protected].

The Washington, DC, area providesmany attractions for visitors and weencourage attendees to explore them inthe off hours of the conference. The IEDMorganizers and committee members lookforward to seeing you in December 2001.

Judy HoytMIT

Cambridge, MA


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The 2001 IEEE Semiconductor Interface Specialists Conference(SISC) will be held November 28–December 1, 2001, in Wash-ington, D.C., immediately prior to the IEDM. The SISC provides aunique, workshop-style forum for device engineers, solid-statephysicists, and materials scientists to discuss issues associated withsemiconductor/insulator interfaces, the physics of insulating thinfilms, and the interaction among materials science, devicephysics, and state-of-the-art technology.

The conference emphasis is on silicon-based devices, includ-ing the SiC and SiGe systems, and topics evolve with the state-of-the-art. Invited and contributed talks are complemented byinformal events designed to encourage lively discussion anddebate including a poster presentation session.

The program includes talks from all areas of MOS scienceand technology, including but not limited to the following:

• alternative and high-k gate dielectric materials,• physics of thin dielectrics and their interfaces,• gate-dielectric conduction and breakdown,• silicon carbide and its interfaces,• physical and electrical characterization of Si/SiO2

interfaces,• micro-roughness measurement, modeling, and device-related

effects,• hot carrier, plasma damage and radiation effects,• nitrogen-containing oxides and stacked interfaces,• surface cleaning technology and effects on dielectrics and

interfaces,• novel oxidation, deposition, and etching techniques, and• theory of oxide and interface defects

Preliminary List of Invited Speakers and Topics forSISC 2001:

Howard Huff, Sematech (USA), General Industry Overview ofHigh K Dielectrics

John Hauser, NC State University (USA), High K Gate DielectricUniversity Activity

Wanda Andreoni, IBM Zurich (Switzerland), Ab-Initio Calcula-tions on High K Dielectrics

John Suehle, NIST (USA), Reliability Characterization ofAdvanced Gate Dielectrics

Ben Kaczer, IMEC (Belgium), Impact of Oxide Breakdown onFET and Circuit Operation

Len Feldman, Vanderbilt University (USA), Oxides on SiC forPower MOSFETs

Martin S. Brandt, Technische Universitaet Muenchen (Germany),Capacitively-Detected Magnetic Resonance on Semiconduc-tor/Oxide Interfaces and FETs

Generous hospitality allows attendants to focus on enjoyingthe conference. Hors d’oeuvres, wine, and cheese encourageinteraction among poster authors and other conference partici-pants at Thursday’s poster session. Friday afternoon has noscheduled talks, to allow time tomeet informally, relax, or visitlocal attractions. On Friday evening the conference hosts abanquet and awards ceremony, complete with the now-famous(and always riotous) limerick contest. The limericks never fail togive the conference presentations, people and events an entire-ly new perspective!

This year will be the 32nd meeting of SISC. The first meetingwas held in 1965 and attendance was by invitation. The confer-ence, now public, alternates between the east and west coasts,and meets just before the IEDM. An important goal of the confer-ence is to provide an environment that encourages interplay

2001 IEEE Semiconductor Interface Specialists Conference (SISC)

October 2001 ❍ IEEE Electron Devices Society Newsletter

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I cordially invite you to come toMaui, HI, and participate in theIEEE-NANO 2001 conference tobe held 28–30 October, at theOutrigger Wailea Resort. This isthe first IEEE conference on nan-otechnology, sponsored by theIEEE Nanotechnology Committeeand by four cosponsoring soci-eties: Robotics and AutomationSociety (RAS), Electron DevicesSociety (EDS), Industrial Electron-ics Society (IES), and Circuits andSystems Society (CASS). This first IEEENanotechnology Conference promises tobe quite an exciting event, featuring ple-nary speaker Richard Smalley from RiceUniversity, 1996 Nobel Laureate inChemistry for the discovery of fullerenes.Other plenary speakers include PhaedonAvouris from IBM, Stella Pang from Uni-versity of Michigan, and Chun-Yen Changfrom National Chiao-Tung University.

Nanotechnology deals with the abilityto work at the atomic and molecular lev-els to create materials and structures withproperties that are yet to be known.Chemists and physicists have been fabri-cating and investigating materials at theatomic level for several decades. Animpetus was the lecture in 1959 byRichard Feynman, “There is Plenty ofRoom at the Bottom.” In that lecture, hestipulated there were exciting new dis-coveries yet to be made if one could fab-ricate materials and devices at theatomic/molecular scale, but he pointedout that a new class of miniaturizedinstrumentation was needed to manipu-late and characterize the properties ofthese nanomaterials and nanostructures.

Fortuitously by the 1980s instrumentswere invented to allow us to visualizeand manipulate individual atoms one at

a time, including scanning tunnelingmicroscopes, atomic force microscopes,scanning probe microscopes, and others.Together with these new tools, advancesin lithographic techniques also allowedus to manufacture nanoscale structures,including e-beam machines and nanoim-printers. Then there was the tremendousexpansion of computational capabilities,enabled by advances in VLSI technology,which allowed us to model and simulatematerials and their behavior at thenanoscale. Then there was the discoveryof carbon fullerenes and nanotubes. Theconvergence of these scientific advanceshas led many scientists and engineers tobelieve that nanotechnology is on theverge of a new industrial revolution.

Those of you who work in VLSI elec-tronics are familiar with the continueddownscaling of the FET in CMOS. Thereis no doubt that today’s state-of-the-arttechnology at 0.035-µm channel lengthwill continue to shrink further. However, itis no secret that most engineers agree thatthe devices will face the limits of physicswhen the dimension reaches 0.010 µm,or 10 nm. On top of that the gate oxidecontinues to be thinner and thinner, inproportion to device shrinking, to a littleover ten angstroms. For VLSI technology

to continue its growth path,there is no question that we willneed advances in nanotechnolo-gy, including nanolithography,nanoimprint, nanomaterials,nanostructures, and other fabri-cation techniques.

The IEEE-NANO 2001 is athree-day conference featuringtwo parallel sessions each dayand covering all aspects of nan-otechnology. There are sessionson nanodevices, quantum dots,

and nanoelectronic circuits and architec-tures. There are sessions on nanocrys-talline materials, nanomaterialfabrication and characterization. Thereare sessions on nanomagnetics, nanos-tructures, and nanorobotics. Then thereare sessions on tools for manipulatingatoms one at a time, such as atomicforce microscopy.

The venue for the conference is theOutrigger Wailea Resort Hotel in Maui,HI. Maui is well known for its scenicbeauty and the world-famous beaches,as well as the world’s largest dormantvolcano, the Haleakala. The Outrigger isenclosed in 22 oceanfront tropical acresand has just gone through a $25 millionrenovation. It has five freshwater outdoorswimming pools, and is adjacent to threesuperb golf courses. The end of October,as any other time of the year, is an excel-lent time to visit Maui and Hawaii. Socome one and come all to the first IEEEconference on nanotechnology. For regis-tration and other information on IEEE-NANO 2001, please visit the website athttp://www.mein.nagoya-u.ac.jp/IEEE-NANO.

Clifford LauCorporate Programs ONR

Arlington, VA

between scientific and technological issues. Invited and contributedtalks, as well as a lively poster session, are presented in an infor-mal setting designed to encourage discussion, and conference par-ticipants enjoy numerous opportunities for social gatherings withrenowned scientists and engineers. Abstracts for contributed talkswere due August 6, 2001.

This year’s SISC will continue the tradition of presenting anaward memorializing Prof. E. H. Nicollian. The award will be giv-en for the best student presentation. Ed Nicollian was a pioneer inthe exploration of metal oxide semiconductor (MOS) systems. Hiscontributions were important to establishing SISC in its early years,and he served as the Technical Chair in 1982. With John Brews,

he wrote the definitive book MOS Physics and Technology.The 2001 SISC is sponsored by the Electron Devices Society

of the IEEE, and will be held immediately prior to the IEEE IEDM.For information and general inquiries about SISC, please see

the conference webpage at http://www.ieeesisc.com or contactthe Arrangements Chair, Bob Wallace, at the Department ofMaterials Science, University of North Texas, P.O. Box305310, Denton TX 76203-5310. TEL: (940) 369-7834, FAX:(940) 565-4824, E-Mail: [email protected].

Bob WallaceUniversity of North Texas

Denton, Texas

2001 IEEE Conference on Nanotechnology (IEEE-NANO)

The 2001 IEEE International Integrat-ed Reliability Workshop (IRW), spon-sored by the IEEE Reliability Societyand the IEEE Electron Devices Society,will be held at the Stanford SierraCamp on the shore of Fallen Leaf Lakenear South Lake Tahoe, CA, October15–18, 2001. This workshop providesa unique forum for open and frank dis-cussions of all areas of reliabilityresearch and technology for presentand future semiconductor applications.

The technical portion of the 2001workshop is being organized by Dr. Lin-da Head of Rowan University and willfocus on six main areas:

• Wafer Level Reliability Tests and TestApproaches,

• Identification of Reliability Effects,• New or Existing Reliability Character-

ization and Prediction Models,• Reliability Test Structures,• Customer Product Reliability Require-

ments / Manufacturer ReliabilityTasks, and

• Designing-in-Reliability (Circuits,Processes, Products).

Hot topics include Cu interconnects;reliability of deep sub-micron; highspeed, high frequency devices; newdielectric systems; and reliability model-ing and simulation.

The IRW is quite a bit different from atypical technical conference. From themoment you arrive, after winding slowlyback to the south shore of Fallen LeafLake, you realize that you are takingpart in something special. Attendees stayin cabins without TVs or phones, dress iscasual (suits, ties, and high heels areshunned), affiliations are downplayed,and meals are taken at the lodge diningroom, family-style. Attendees of theworkshop are expected to participateactively. You feel yourself drawn intotechnical discussions from the start.Every aspect of this conference, from theisolated location to the format of thetechnical program, is designed to getattendees to interact.

Located just a short scenic drive (lessthan two hours) from Reno, the StanfordSierra Camp is situated at 6000 ft inthe High Sierra on Fallen Leaf Lake.Attendees stay in cabins nestled amid

the pines and cedarsalong the shoreline.All cabins havedecks and breath-tak-ing views of the lakeand surroundingpeaks (don’t worry,the cabins also havewarm beds and hotshowers; phone booths are available inthe lodge). This peaceful setting, freefrom the distractions and annoyances ofmodern life, presents a terrific opportu-nity to get to know your colleagues,including internationally renownedexperts. This is an opportunity not usual-ly available at bigger, more hectic relia-bility conferences. Instead of watchingTV, participants spend their evenings atposter sessions, discussion groups, andspecial interest groups (SIGs), all withrefreshments provided to stimulate dis-cussions.

One unique aspect of this workshopis the opportunity for every attendee topresent a poster of their own research,no matter what state it is in. Just arrangefor space when you register or bringlast-minute results in your briefcase orbackpack. Your ideas will be accommo-dated. This is a great way to share thatnew project you are working on and toget world-class feedback. The poster pre-sentations are even eligible for a two-page write up in the conferenceproceedings. The open poster ses-sions are but one example of theopportunities for interaction that sets theIRW apart from other conferences.

Another distinction of the IRW is themoderated Discussion Groups thatare held in the evenings. Organized thisyear by Prasad Chaparala of NationalSemiconductor, the Discussion Groupstopics are: 1) Single Event Upsets (SEU),2) WLR Monitoring, 3) Product Qualifica-tion/Burn In, 4) Gate Oxide Integrity, 5)Electromigration, and 6) Designing forReliability. Lively conversation anddebate among participants is promisedand written summaries will be included inthe workshop proceedings.

For those with the stamina, the Discus-sion Groups are followed by the SpecialInterest Group meetings or SIGs (asattendees refer to them). The SIGs are

composed of smallgroups of researchersand engineers whooften continue their con-versations and collabo-rations even after theyleave the workshop.Every attendee has theopportunity to become

part of an existing SIG or to suggest anew topic and start one of their own.One particularly successful example isthe Thin Oxide Integrity SIG which hasmet for several years and collaborated toproduce award winning presentations atother reliability meetings. Be warned,remnants of the SIG discussions some-times rage on into the wee hours of themorning.

Yet another advantage of attendingthe IRW is the Tutorial Short Course,presented by world class experts andincluded at no additional cost. The tutori-als review basic topics as well as the lat-est developments. They are designed tobe beneficial to newcomers as well asexperienced members of the reliabilitycommunity. The tutorials are organizedthis year by Al Strong of IBM.

Last, but certainly not least, attendeeshave Wednesday afternoon off to enjoyactivities such as hiking (with the annualtrek to the top of Mt. Tallac as a favoritegoal), volleyball, canoeing, biking, walk-ing, or just conversing by the lake, all inthe fresh clean mountain air. This freeafternoon is a great way not only to net-work but to build long-lasting friendships.

Additional information about theworkshop is available on the IRW web-site at http://www.irps.org/irw, or bycontacting SAR Associates at 301 N.Madison Street; Rome, NY 13440, TEL:(315) 339-3968; FAX: (315) 336-9134.Note: If you want to take part in thisevent, please register early as space atthe Stanford Sierra Camp is limited toroughly 120 attendees and the workshophas sold out in the past.

On behalf of the 2001 InternationalIntegrated Reliability Workshop Commit-tee, we look forward to meeting you inLake Tahoe!

Abdullah YassineAdvanced Micro Devices

Austin, Texas


6

2001 IEEE International Integrated Reliability Workshop (IRW)


7

2001 IEEE Gallium Arsenide Integrated Circuits Symposium (GaAs IC)On behalf of the organizing com-

mittee and the IEEE Electron DevicesSociety, Microwave Theory and Tech-nology Society, and Solid-State Cir-cuits Society, I invite you to be a partof the upcoming 2001 IEEE GaAs ICSymposium. This year’s symposiumwill be held October 21–24 in Balti-more, MD, at the Renaissance Har-borplace Hotel. Over the last 23years, the IEEE GaAs IC Symposiumhas become the preeminent interna-tional forum on developments in inte-grated circuits using GaAs, InP,SiGe, GaN, and SiC, as well as oth-er compound semiconductor devices.In 2001, the Symposium continues its tra-dition of presenting the best from aroundthe world in high frequency microelectron-ics. This year’s program continues todemonstrate the developments in commer-cial wireless and optical communicationstechnology. Major focus areas of thisyear’s GaAs IC Symposium, organized byTim Henderson of TriQuint and the Techni-cal Program Committee, include state-of-the-art circuits and technology for:

• Wireless and broadband communi-cations,

• Very high-speed optical communica-tions,

• Highly efficient, linear, power ampli-fiers,

• Optoelectronics for optical intercon-nect, and

• Millimeter-wave systems

The technical sessions will highlight allaspects of technology: device develop-ment and fabrication, characterizationand modeling, IC design and testing,high volume manufacturing, reliability,and system applications. We will alsocontinue the discussion that we startedlast year on the topic of a technologyroadmap for III-V compound semiconduc-tor ICs. Hot new results obtained thissummer will be presented in the “LateNews” session.

This year we have five exciting PanelSessions spread over the three days ofthe technical sessions. These are intend-ed to be timely, thought-provoking, edu-cational, and possibly even controversial.The topics are as follows:

Panel Session 1: “So What’s YourTechnology Good For?”

Panel Session 2: “CAD Shootout”Panel Session 3: “40 Gb/s ICs”Panel Session 4: “OEICs: Reality or

Laboratory Curiosity?”Panel Session 5: “High Voltage,

High Power PAs”

The 23rd IEEE GaAs IC Symposiumkeeps up our tradition of providingfocused educational opportunitiesthrough our Short Course and PrimerCourse, both held on Sunday, October21. Chris Bozada from the USAF hasorganized a very interesting and highlyapplicable one-day Short Course on“Optical Fiber Systems” taught by fiveindustry experts. The course starts withan overview of fiber systems, theirdesign, IC requirements and technologytrade-offs. Then, two sections are devot-ed to IC design issues, firstly the variousamplifiers: transimpedance, limiting,AGC and modulator and LASER drivers,and following that serialisers, deserialis-ers (SERDES - aka multiplexers & demulti-plexers) and clock and data recovery(CDR) designs. The important topic ofsystem and subsystem packaging andintegration are tackled next, followed bya discussion of photonics for RF applica-tions. Finally, all short course instructorswill offer their opinions on the futuretrends of the technology.

Stephen Long and Donald Estreichwill present our Primer Course, which isnot only an excellent tutorial on com-pound semiconductor electronics but is

presented within the context ofthis year’s symposium contents.You have the opportunity to learnof new products from the approxi-mately 40 exhibitors in the GaAsIC Technology Exhibition, andpotential customers for the latestcommercially available GaAs ICscan hear about these in the Ven-dor Product Forum, organized byBill Peatman of Anadigics andNorman Chiang of CaliforniaEastern Labs. This forum willreview recent wireless productdevelopments from some of theleaders in the industry. Questions

we hope to address include 1) Whatrecent improvements have been made tothe HBT regarding performance and reli-ability, 2) Is there a role for enhance-ment mode FETs as alternatives to theHBT, 3) What are the technology choic-es for 2.5 and 3G handset power ampli-fiers, 4) How much integration inside thePA module is required, and 5) Whatnew material developments may impactwireless development going forward.

To complement the full technicalprogram, we have provided severalsocial events to allow interactions withcolleagues while catching up with thenewest technology available on themarket. These events include the Sun-day evening Opening Reception, theMonday evening Technology Exhibi-tion Reception, and the Tuesdayevening of fun, science, and an Imaxmovie at the Baltimore Science Center.Finally, I want to announce the winnersof our 4th Outstanding Paper Awardfrom the 2000 Symposium: M.Sokolich, C. Fields, B. Shi, Y. K.Brown, M. Montes, R. Martinez, A. R.Kramer, S. Thomas III, and M. Madhavof HRL Laboratories for their paper “ALow Power 72.8GHz Static FrequencyDivider Implemented In AlInAs/InGaAsHBT IC Technology.” We hope you’lljoin us in Baltimore for the 23rd IEEEGaAs IC Symposium.

To find out more, please visit the Sym-posium website at http://www.gaasic.org.

John SitchNortel Networks

Nepeon, ON, Canada


8

The Spring 2001 meeting of the EDSAdCom was held on July 7 at the WestinStamford & Westin Plaza Hotel in Singa-pore in collaboration with the IEEE Int.Symposium on Physical & Failure Analysisof Integrated Circuits (IPFA).

Officers & Chairs ReportsPresident, Cary Yang, opened the

meeting with a hearty thanks to M.K. Rad-hakrishnan (CPMT/ED/R SingaporeChapter Chair) and his officers for host-ing the AdCom visit. Following formalacceptance of the minutes from theDecember 2000 meeting and the newmeetings list, he elaborated on severalIEEE actions having an important impactof the EDS. The Y2000 deficit has had amajor impact on the IEEE’s finances andbudget. Consequently, technical societyreserves will be used to cover the short-fall, and EDS is no exception. Our IEEEdeficit assessment under this newarrangement was $871.9K. In addition,another reduction (possibly up to twicethis amount) is likely to occur again in2001 if the stock market remainsdepressed. The apportionment is basedon the amount of “reserves per member,”and EDS enjoys the fourth highest reserveof all the technical societies at $6.8M. Inaddition to the stock market, this situationis also due to IEEE keeping its infrastruc-ture costs frozen and not increasing mem-ber rates over the past few years. Ingeneral, IEEE enjoys good financialhealth but its operations will requirechanges such as a freeze on spendingreserves and increasing costs. At thispoint the Y2002 expectations are

unknown, and while planningfor a balanced budget (assum-ing a 6% ROI) continues, it ispossible that a third levy maybe required. In addition,increases in membership dues(+$15) and IEEE package prod-ucts are expected. The project-ed Institute budget shouldevolve to spending only 5%return on our investment. Ensu-ing AdCom discussions cen-tered on what EDS can orshould do to confront this issue.On the surface it would appearthat EDS is being penalized forbeing successful and practicinggood fiscal habits. However, allIEEE entities are affected, and in truth, alltheir respective funds belong to IEEE. Ourrepresentatives are being heard at TABmeetings and at the Board level. Suggest-ed modifications to EDS spending to dealwith this situation are being discussed.

Bill Van Der Vort, standing in for AprilBrown, gave the Treasurer’s Report. Ingeneral, the Y2000 budget matched theestimated figures. The publication cost ofthe EDS Membership Directory was sig-nificantly higher than budgeted, primarilydue to the growth in the EDS membershipthe past two years. While the directory isavailable both in published and electron-ic form, the EDS AdCom recently votedto publish it every two years rather thanannually to save costs. T-ED income fromvoluntary page charges and nonmemberfees were slightly down, and both theECS Letters and the EDS CD-ROM Pack-age showed a slight loss. Revenue fromthe IEEE Book Broker program continuesto be very good, returning $441K toEDS. Due to another successful year, EDSsurplus for Y2000 was $537.7K. As alsostated previously, EDS has $6.8M in itspresent reserves with a $236K budgetedsurplus for 2001 independent of what fis-cal support will be required from IEEE.The net budgeted surplus for Y2002 is$569.3K. Costs incurred from GraduateStudent Fellowship support, continued

globalization, Executive Office costs, andchapter subsidies are expected to rise in2001. AdCom has approved increasesfor regular and permanent membershipfees, and EDL & T-ED subscriptions forboth members and non-members.

The Executive Office report was givenby Bill Van Der Vort. Since December, heand his staff have been busy with a vari-ety of projects such as continuation of theEDS oral histories booklet, and support forthe IEEE TAB Nanotechnology Committee.Both of these efforts are discussed ingreater detail later in this article. In addi-tion, they have worked with EDS officersand committees on the budgets for J-MEMS, T-SM, and M-C&D to meet the fis-cal challenges outlined above, implemen-tation of the Regions/Chaptersrestructuring and Chapter Partners Pro-gram, coordination of the biennial Region10 Chapters Meeting, the rollout of theSenior Membership incentive, implementa-tion of a worldwide program to subsidizememberships for low-income members,development of a proposed half-yearmembership promotion, and continuationof providing administrative support for theIndependent Short Course Program. Othermajor accomplishments have been thecoordination of the Graduate Student Fel-lowship program, the distribution of a poli-cy letter to all the Distinguished Lecturers,

Society News

Spring 2001 EDS AdCom Meeting Summary

John K. Lowell

EDS President, Cary Y. Yang, gives his opening remarksfor the July 2001 EDS AdCom meeting in Singapore.


9

putting in improvements to streamline theDistinguished Lecturers program as awhole, putting in a new manuscript systemfor T-ED, completing the move of the T-EDpublications office, and ongoing supportfor the T-DMR. As the year progresses, theExecutive Office will be involved in theongoing support for many of the tasks dis-cussed below, as well as with puttingtogether a biennial meeting of the Region9 chapters, increasing the DistinguishedLecturers program visibility by expandingits information on the EDS website, provid-ing web-site support for the technical com-mittees, and arranging the 8th EDSMeeting Organizers Workshop.

As of December 31, 2000, EDS mem-bership stood at 13,283 as reported byJames Kuo, Membership Chair. Whilethis number is still dominated by Regions1-6, Regions 8 and 10 are increasing,with Region 10 growing the fastest. Thetotal number represents a net gain of2.5% from 1999 with the number of per-manent members up almost 400 over thesame year. Special membership projectssuch as on-site promotions at IEDM andISSCC have added 200 members. Othernew recruiting packages offering freeEDS membership to any IEEE memberadded another 31 members this year.The committee also provided specialmembership packets to all EDS Distin-guished Lecturers, coordinated the annu-al TIP mailing to non-EDS members whoindicated EDS as an interest, andrenewed the membership and publica-tion arrangement for eleven East Euro-pean chapters. This year EDSimplemented a new membership fee sub-sidy program to chapters supporting per-sons with income under $8,600, a limitset by IEEE guidelines. So far, threechapters (or a total of 24 members) aretaking advantage of this offer. Anotherinitiative designed to encourage quali-fied members to apply for IEEE SeniorMembership status has resulted in fiftynew Senior Members. James also out-lined a new proposal to extend a free,half-year membership in EDS to newIEEE, non-EDS members. A similar strate-gy was successfully used by the IEEECommunications Society (ComSoc) dou-bling its membership. If approved, theprogram would cost $31K in its first yearand $57K in the second. Projections indi-cate that EDS could potentially add6,000+ new members in the initial year,and 5,500 more in the second based onan estimated 12% return. While the ideais attractive, AdCom discussion pointed

out that ComSoc is different than EDS,and what worked for them may not havethe same result for EDS. In addition, inlight of the fiscal issues mentionedabove, EDS must be judicious about“costs-per-member” against a potentialinflux of new members. The proposal willbe discussed again in December.

As reported by Hiroshi Iwai,Regions/Chapters Chair, EDS currentlyhas 103 chapters worldwide, including 8student branches. The recent division ofchapter management into five subcommit-tees (SRCs), namely North AmericaEast/Canada, North America West, LatinAmerica, Europe/Africa/Middle East, andAsia/Pacific, has allowed for a geograph-ic redistribution of chapter partners withclearly established responsibilities.

Ilesanmi Adesida, Chairman of Educa-tional Activities, summarized the majoreducational programs: Distinguished Lec-turers (DL), the EDS Graduate Student Fel-lowship, Vanguard Independent ShortCourses, and Outreach. On the DL side,a letter was composed (to be distributedbiannually) to all participants remindingthem of their responsibilities. Specifically,that to remain in the DL program, eachlecturer must give (at least) one lectureevery two years. Forty-five DL lectureshave already been given/are scheduledfor 2001 that is commensurate with theY2000 numbers and costs. Informationon the EDS Graduate Fellowship programis given later in this article. The VanguardIndependent Short Courses program is aneffort pointed to providing timely educa-tion to practicing engineers. Five courseshave been given so far in 2001 coveringthe topics of RF CMOS, Fiber Optics,Modeling for Design and Reliability, andHigh-K Dielectrics with one class beingpresented in Taiwan. At this point, thecommittee is reviewing and assessing theoutcome of these classes looking at pric-ing, materials, topics, quality, and mem-ber interest. Since the program is runninga significant deficit, due mostly toincreased costs and undersubscribedclasses, EDS needs to improve the infra-structure, find local champions, solicitregion and chapter leaders, technicalcommittees, and involve a new industrialrelations committee (see below) toimprove these offerings. At this point, thecourses will continue at 1-2 classes peryear but will critically look at better topicselection and possibly industrial supportor sponsorship. The Outreach programcontinues to support chapter formation in“disadvantaged” areas worldwide.

Reporting for the Publications Commit-tee, Chair, Renuka Jindal, cited editorialpolicy and procedures, quality, speed,recognition, circulation and budget as theprincipal tasks for his group. The Publica-tions Committee in 2001 is consideringadding representatives from all EDS-spon-sored and co-sponsored publications, theEDS Meetings Committee, and EDS tech-nical committees. This expanded groupwill be better suited to deal with manu-script review uniformity, resolution ofauthorship disputes, proper referencing ofprevious work, and other editorial policyissues. General quality continues toimprove as publication metrics becomeestablished. Renuka is looking at impactfactors, or some other custom metricbased on citations, to judge the use andquality of EDS publications such as T-EDand EDL. Both these journals now enjoycentralized manuscript handling throughthe IEEE office in Piscataway, which hasstreamlined the entire publication process.This year’s Rappaport award winner is“SON (Silicon-on-Nothing)—An Innova-tive Process for Advanced CMOS” by M.Jurczak and co-authors, published in T-EDNovember 2000 (Vol.47, No.11).Recognition for EDS authors continues togrow as the Rappaport award runner-upwill now receive a recognition letter andpossibly be nominated for IEEE prizepaper awards. Editors too will be hon-ored when they retire with special cere-monies at a conference of their choosing.The EDS 50th anniversary “best paper”selection of seminal papers from T-ED,EDL, and IEDM continues to be discussed,but difficulties have arisen in judging wor-thy contributions published after 1994when only using citation index, since notenough time has elapsed to collect a hun-dred citations or more. For this collection,it is harder to deem the definition of“best.” With the trend towards electronicpublishing increasing, the committee isworking to understand its impact on circu-lation. This also impacts the budget asEDS deals with the $100K cost of provid-ing online access to EDS publications witha possible reduction of the number ofjournals offered electronically. Renukaalso announced that the forthcoming T-EDSpecial Issue on bipolar devices willinclude an invited paper by Jim Early. Inconclusion, he discussed efforts to obtainthe rights to a historic limerick recordedby Bell Labs staff at the 1957 DRC whichwill be referenced in the Special Issue onBipolar Devices and made available onIEEE Xplore.


10

Meetings Chair, Ken Galloway,announced that 135 meetings are expect-ed in 2001. Of these, 33 will be spon-sored/cosponsored, 93 are technicallysponsored, and 9 remain cooperativelysupported. Since 1999, when IEEE startedcharging penalty fees for late conferenceclosings, EDS has paid $6,478.00. Almostall these charges were assessed in the firsteighteen months. Copies of the Photovolta-ic Specialists Conference (PVSC) ArchivalCD-ROM given to EDS could potentiallygenerate up to $120K in extra income.The CD-ROM includes all past proceedingsfrom 1962 to the 28th PVSC.

Committee ReportsSince December, our Technical Com-

mittee (TC) Coordinator Chair, Steve Hil-lenius, has been soliciting representativesfrom all the technical committees to serveon the Publications and Meetings Commit-tees. Narain Arora heads the recentlyformed (as of March 2001) CompactModeling TC. The charter of this group isto identify, examine, and evaluate currentmodels for active/passive componentsused for circuit simulation emphasizingmodels for components/interconnectrequired for chip design. They haveestablished a website, and a 1-day semi-nar targeted for the September FSA meet-ing is in the works. The TC will also holdits first workshop on MOSFET modeling inApril 2002 with an interconnect modelingworkshop in conjunction with IEEE Inter-connect Symposium to follow in 2002.Narain’s talk listed other planned activi-ties including continued work with WCM-MSM in 2002, tutorials on existingmodels, and an online journal on com-pact modeling (proposed).

Next, Cary Yang reported on the2001 Fellows Evaluation, and on a cou-ple of new EDS initiatives. On the Fellows

front, 46 nominations for Fellow werereceived down slightly from last year’snumbers. As usual, the winners will beannounced in November. Bruce Griffingand Cary Yang have led an effort toexamine ways to open AdCom electionsto the general membership and to makethe election process generally more effi-cient. Some of these first efforts havebeen initiated and were described byCary. For example, this year’s nomina-tions for EDS Vice-President were openedto EDS ExCom members for the first time.As a result, Ilesanmi Adesida and HiroshiIwai will stand for election in December.This paves the way for the following pro-posals: (1) The elected Vice-President willbecome the President-elect following atwo-year term, and a new V-P will be cho-sen eliminating a formal election for EDSPresident, (2) Both the EDS Secretary andTreasurer will be appointed, not elected,and (3) AdCom elections will be openedto the general membership with a slate ofcandidates screened by committee. Thesereforms will be discussed further inDecember. Finally, Cary discussed estab-lishing an Adhoc Industrial RelationsCommittee for EDS following a suggestionby former EDS President and currentAwards Chair, Al Mac Rae. The purposeof this group is to acquire more input on“practicing engineer” professional needsreacting to overall IEEE membershiptrends & statistics. The committee will beannounced this Fall.

Graduate Fellowship and 50thAnniversary Programs

Arlene Santos, Chair of the GraduateFellow Subcommittee, reviewed the resultsof the initial EDS Graduate Student Fellow-ship program. This year’s winners are,from the Americas, Yee-Chia Yeo (Universi-ty of California, Berkeley), from the Asia-

Pacific, Sergei Kucheyev (The AustralianNational University, Australia), and, fromEurope, Middle East and Africa,Tusharkanti Ghosh (Lancaster University,UK). These individuals will each receive$5K, with their department and professorreceiving $1K each to support the work ofthe awardees. Each recipient will alsoreceive a plaque in a formal presentationat the IEDM. Overall, 11 nominations werereceived: five from the Americas, threefrom the Europe/Africa/ Middle East, andthree from the Asia/ Pacific areas. EDSsalutes these individuals, all the nominees,and everyone involved for a successful ini-tial year of this program. Arlene alsoreported that the 2002 EDS 50th Anniver-sary Celebration will be held at the Decem-ber IEDM in San Francisco. A celebrationdinner will to be added to the IEDM activi-ties, possibly to include those individualsparticipating in the oral histories program.A special EDS historical exhibit will also beon display. The AdCom also received anupdate on the IEEE Nanotechnology Con-ference for 2001 of which EDS is one offour sponsoring societies. The IEEE TABNanotechnology Council may be formedin 2002 pending approval this November.IEEE’s Transactions on NanotechnologyEditor-in-Chief, Prof. S. Tiwari of Cornell,will initiate publication in early 2002. Amotion to provide up to $3K for support ofthe IEEE TAB Nanotechnology Committeefor 2002 was approved and passed. Inconclusion, reports from the ED/SSC Yugo-slavia Chapter, 2001 IEDM, and 2000Int. Conf. on Microelectronics were heard.

The next meeting of the EDSExCom/AdCom will be in Washington,D.C., on December 1 and 2, 2001, inconjunction with IEDM.

John K. LowellPDF Solutions

Richardson, TX

EDS Region 10 Chapters Meeting SummaryThe Electron Devices Society held its

3rd Biennial Region 10 (Asia-Pacific)Chapters Meeting on 8 July 2001, inconjunction with the International Sympo-sium on Physics and Failure Analysis ofIntegrated Circuits (IPFA) at the WestinStamford Hotel in Singapore. The meet-ing provided a forum for the ChapterChairs to meet one another as well as theIEEE staff and EDS AdCom members. It isan opportunity for the chapters to sharetheir experiences and practices, as well

as express their needs and concerns tothe AdCom members.

This year’s meeting was co-hosted byHiroshi Iwai, EDS Regions/Chapters Com-mittee Chair, and Kwyro Lee, SRC-AP(Asia-Pacific) Chair. Representatives of 13chapters out of 15 in Region 10 attendedthe meeting. They were Australia, Beijing,Bombay (India), Hong Kong, India,Japan, Kansai (Japan), Korea, Malaysia,Seoul, Singapore, Taipei, and Thailand.In addition, Professor Bing-Zong Lee of the

newly formed Shanghai Chapter (EDS’16th Region 10 Chapter) attended.Hiroshi Iwai initiated the meeting with anexplanation of the Subcommittee forRegions and Chapters and its role in therejuvenation of the SRC/Chapter PartnersProgram. The re-introduction of the Chap-ter Partners Program has occurred with thereassignments/reconfirmations of partnersby the SRC Committee.

Arlene Santos, Vice-Chair of SRC-NAE (North America East), Nino Sto-

11

jadinovic, Vice-Chair of SRC-EAM (Europe, Africa and Mid-dle East), and Juzer Vasi, ViceChair of SRC-AP (Asia Pacific)presented reports concerningtheir Regions’ recent activitiesand future plans on how to uti-lize the SRC Committee andPartners Program.

All 13 representatives of thechapters gave their plans andexpectations on the newly start-ed Chapter Partners Programas well as yearly reports of their activi-ties. Finally, Kwyro Lee, SRC AP Chair,moderated an open discussion amongthe participants. There were several com-ments, questions and requests regardingthe SRC/Partner activities, DistinguishedLecturer (DL) Program, STAR Program,and Membership Fee Subsidy Programand many suggestions for improvementswere given. The chapter representatives

were strongly encouraged to contacttheir partners or SRC Chair/Vice-Chairsregarding any individual questions/problems or suggestions.

Under the new SRC/Chapter PartnersProgram all chapters have been assigneda minimum of one partner, with the Asia-Pacific chapters having two partners.Every partner for Region 10 has beenasked to meet with their chapters at least

once every two years and toassist in setting up DistinguishedLecturer talks. Furthermore, theSRC Chair and Vice-Chair willarrange tours of a group of dis-tinguished lecturers for a mini-colloquia around neighboringchapters. Thus, there will be asignificant increase of DLs aswell as meetings and exchangesbetween chapters and partners.

Hiroshi Iwai,Tokyo Institute of Technology

Yokohama, Japan

Kwyro Lee, KAIST University

Taejon, Korea

Juzer VasiIndian Institute of Technology

Mumbai, India

Attendees of the EDS Region 10 Chapters Meeting in Singapore (left to right):Renuka P. Jindal, Yean C. Ng, M.K. Radhakrishan, Bing-Zong Li, Fu-Jiang Liao.

Independent Short Course on High-KDielectrics a Hit

With April venues onboth sides of the Pacific,University of Texas Prof.Jack C. Lee delivered apopular six-hour shortcourse on gate dielectricsin Santa Clara, CA, andHsinchu, Taiwan. Part ofthe Vanguard Series ofindependent short courses,the April short course is the fourth in theseries begun in 2000.

The course provided a good review ofthe literature with a special emphasis onLee’s high-k gate dielectric research,which focuses on ZrO2 and Hf02, aswell as the research of others. The ques-tions and answers during both sessionsindicated an informed interest in the lat-est research.

Industry participants in Santa Claraand Taiwan came from companies likePhilips Semiconductor, SSTI, TSMC, andUMC. University participants came fromSanta Clara Univ., UC Berkeley, Stan-ford, and National Chiao Tung Univ., aswell as most of Taiwan’s technology-ori-ented universities.

In building the series of short coursesheld at venues with heavy concentrationsof semiconductor industry activity, EDS

Taipei Chapter Chair,Steve Chung, was instru-mental in defining the newrole of Local Champion forthe series. As a result,attendance was the best ofthe series.

The Short Course sub-committee approved the

release of the videotapesfor the 2000 short courses for distributionand sale at IEEE’s online store(shop.ieee.org/store). The titles, whichare Circuit Designs and Technology forRF-CMOS, Overview of Fiber Optic Com-munications, and Using Modeling toResolve Design and Reliability Issues, areavailable in either NTSC or PAL format.They are also available from IEEE’s Pro-fessional Development Institute.

For further information about theseshort courses, see http://www.ieee.org/eds/shortcourses.

Ilesanmi AdesidaUniversity of Illinois

Urbana, IL

Emily SopenskyThe Iris Company

Austin, TX

This is a reminder for EDSmembers to vote in the2001 IEEE Election for IEEEPresident (Michael S.Adler, Paul J. Kostek, orArthur W. Winston) andDivision I Director (GordonW. Day or Cary Y. Yang),as well as your respectiveRegion Directors. Electionballots with biographies ofthe candidates weremailed out September 1and the deadline for thesubmission of your ballot isNovember 1, 2001.

IEEE Election!Did You Vote Yet?

Steve Chung (left) and Prof. Jack C. Lee



12

Each year, the IEEE Electron DevicesSociety confers the Paul RappaportAward to the best paper published in anEDS publication. The recipient(s) isawarded a certificate and a check for$2,500, presented at the InternationalElectron Devices Meeting (IEDM).

The winner of the 2000 award is apaper entitled, "Silicon-on-Nothing(SON)—An Innovative Process forAdvanced CMOS," which appeared inthe November 2000 issue of Transac-tions on Electron Devices, and wasauthored by Didier Dutartre, MalgorzataJurczak, Damien Lenoble, Jose Martins,Stephane Monfray, Roland Pantel, M.Paoli, Jorge Luis Regolini, Pascal Ribot,Thomas Skotnicki, and Beatrice Tormen,and has been selected as the best paperin an EDS publication during 2000. The2000 award will be presented at theIEDM on 3 December 2001 in Washing-ton, D.C. The following are brief biogra-phies of the eleven winners.

Didier Dutartre, born in1956, received the engi-neering degree in MaterialPhysics from the Institut desSciences Appliquées deLyon, France, in 1979,and the Ph.D. degree in

1983. His doctoral research dealt with ther-modynamics and liquid phase epitaxy of III-V compounds. He then joined the CentreNational d'Etudes des Télécommunications(CNET) as researcher in Material Science.From 1983 to 1989, he developed thelamp zone melting recrystallization tech-nique for the fabrication of thin silicon-on-insulator films. Between 1989 and 1994,he worked in reduced pressure rapid ther-mal CVD and started the CNET researchactivities on SiGe epitaxy. In 1994, hejoined the Centre Commun Crolles, a con-sortium between CNET and STMicroelec-tronics, where he developed hightemperature Si epitaxy, in situ doped Si

poly processes, and low temperatureSi/SiGe epitaxy. In 1999, he joined STMi-crolectronics where he is presently leadingR&D activities in epitaxy and poly. Heholds more than 20 patents and has about100 publications in these fields. He is mar-ried and has two children.

Malgorzata Jurczakreceived M.Sc. and Ph.D.degrees in electrical engi-neering from the WarsawUniversity of Technology(WUT), Poland, in 1991and 1997. In 1991, she

joined WUT where she worked on model-ing of MOS SOI devices. In 1994, shewas with NMRC, Cork, Ireland, and in1997 with Kyung Hee University, Seoul,Korea. In 1998, she joined CNET Greno-ble, France, Telecom. She was involved indevelopment of 0.18 and 0.12-µm CMOSprocess and alternative approaches forsub-0.1 µm CMOS. In 2000, she joinedIMEC, Leuven, Belgium, where she is incharge of 100-nm CMOS technologiesdevelopment. She holds 15 patents andauthored 40 papers. She received theBest Paper Award at ESSDERC 2000.

Damien Lenoble received the Engi-neer Diploma, the M.Sc. Degree in elec-trical engineering (1996) and the Ph.D. inSemiconductor Physics and Technology(2000) from the National Institute ofApplied Science of Toulouse. His Ph.D.work was performed in the France Tele-com R&D Center of Grenoble. His studieswere focused on the investigation of ultra-shallow p+/n junctions and their impactin deep sub-micron CMOS technologies.He particularly worked on alternativedoping technique such as plasma doping.Since 2000, Damien Lenoble has joinedST Microelectronics (Crolles-France)where he is leading the ion implantationR&D with a particular involvement in thedevelopment of advanced technologies.(No photo was available.)

Jose Martins was bornin Saint-Jean de Mauri-enne, France, in1971.He received theB.Tech. Degree in indus-trial computing science in1991 from Cluses univer-

sity. In 1993, he joined STMicroelectron-ics, Crolles, where he worked in metallic

deposition (PVD). In 1996, he joined theCentre Commun Crolles, a consortiumbetween CNET and STMicroelectronics,where he developed the new architec-tures for advanced MOS devices (SON,notched gate). His work was dedicatedto developing an isotropic plasmaprocess in order to etch selectively thetunnel in SiGe. He is currently workingin thermal treatment for 300-mm equip-ment valuation.

Stephane Monfraywas born in Lyon, France,in 1975. He received theEngineer degree inphysics and the postgrad-uate Diploma in micro-electronics in 1999 from

the Ins t i tu t National des SciencesAppliquées (INSA), Lyon, France. In1998, he was with the Laboratoired’Electronique, de technologie etd’instrumentation (LETI) where he wasinvolved in electron beam lithography,and in 1999, he was working with theLETI and INSA on silicon nanostructures.He is current ly pursuing the Ph.D.degree with France Telecom R&D, Mey-lan, France, and STMicroelectronics,Crolles, France. His work is dedicated tothe development and characterization ofnew architectures for advanced MOSdevices, and particularly the silicon-on-nothing (SON) project.

Roland Pantel wasborn in Pont de Montvert,France in 1949. Hegraduated as a PhysicsEngineer from INSA Lyonin 1974 and received hisPh.D. on plasma surface

interaction from University of Orleans in1977. From 1977 to 1980, he workedas a research assistant at the PlasmaLaboratory of the Physics Department ofUniversity of Montreal, Quebec, Cana-da. From1980 to 1999, he has been atCNET France Telecom, Meylan, France,as a Research Engineer where he devel-oped physical and chemical characteri-zation techniques using Auger electronspectroscopy, focused ion beam, ener-gy filtered transmission electronmicroscopy, and electron energy lossspectroscopy. In January 2000, hejoined STMicroelectronics Crolles werehe is now in charge of transmission

2000 EDS Paul Rappaport Award

Renuka P. Jindal


13

electron microscopy and spectroscopyanalysis research and development.

M. Paoli, photo and bio not available.

Jorge Luis Regolinireceived his M.Sc. fromCentro Atomico Bariloche(Argentina) and graduatedfrom Strasbourg University(France) with a thesis inSolid State Physics. He

was then with the Atomic Energy Commis-sion in Argentina as a researcher on Semi-conductor Physics and Technology. At theEE Dept. (Stanford University, USA) heworked as a post-doctoral fellow in laserprocessing for silicon recrystallization andsilicide formation. Since 1986, he is withFrance Telecom CNET-CNS involved onRT/RPCVD for the selective deposition ofepitaxial Si/SiGe and silicides. He haspresented several invited papers in thatfield, concerning mainly material fabrica-tion and characterization, kinetics, andkinematics aspects of reduced pressure sin-gle wafer reactors. He is also working insilicide deposition by CVD for contacts andinterconnects. Since 1999, he is with STMi-croelectronics (Crolles-France) as TechnicalStaff Engineer on Advanced Dielectrics fornew generations of DRAMs and gatestacks. He holds several patents and morethan 100 publications in these fields.

Pascal Ribot was born in Ales, France,in 1970. He received the Diplôme d'E-tudes Approfondies de Microélectroniquein 1996 at the Université de Grenoble. He

joined first the CentreNational d'Etudes desTé l é commun i ca t i on s -Grenoble in 1998, andthen ST MicroelectronicsCentral R&D, Crolles,France in 1999, where heobtained the Ph.D. degree.

His research interests included non-selec-tive and selective epitaxy by RTCVD of sili-con and SiGe layers for bipolar andadvanced CMOS applications. He ispresently working in the CVD ProcessEngineering group at Crolles.

Thomas Skotnickireceived the Engineerand the M.Sc. degrees inElectronics from the War-saw University of Technol-ogy, Warsaw, Poland, in1979, and the Ph.D.

degree (with honors) also in Electronicsfrom the ITE CEMI, Warsaw, in 1985. In1986, he joined the France TelecomR&D (CNET), Grenoble, where he firstworked on CMOS modeling and nextmanaged test and development of MOSdevices. In 1992, he received from theINPG the French Diploma Habilité àDiriger des Recherches. In 1999, hejoined STMicroelectronics Crol les,France, where he manages theAdvanced Devices Program running pro-jects on 0.07–0.05-mm FE device andmemory modules. He has responsibilitiesin numerous European projects. He holds30 patents, has authored several invitedpapers, over 100 specific papers, a few

book-chapters, and has served in Pro-gram Committees for IEDM and ESS-DERC. From 1993 to 1996, he lecturedas a Professeur Vacataire at the INPG,Grenoble. He is a co-recipient of the ESS-DERC 2000 Best Paper Award. He is amember of IEEE. In 1998, he was elect-ed a Senior Member of the SEE (French)for outstanding achievements in the fieldof electricity and electronics.

Béatrice Tormen wasborn in Grenoble, France,in 1961. From 1979 to1996, she worked in dif-ferent sites of STMicroelec-tronics in Grenoble asOperator and Trainer both

in photo and etching areas. In 1996, shewas in Centre National d’Etudes desTelecommunications (CNET Meylan)where she joined the consortium estab-lished between CNET and STMicroelec-tronics as technician in Central R&D. Shewas in charge of etching processes devel-opments for 0.15-µm then 0.12-µm CMOS(vertical transistor, dielectric pockets, polySiGe gates, notched gates) and particular-ly for SON project. She also has beenextensively involved in several Europeanprojects such as NOVA, ACE, andMEDEA. Now she is involved in evalua-tion of 300-mm equipment for 0.12- and0.1-µm technologies.

Renuka P. JindalEDS Publications Chair

Agere SystemsMurray Hill, NJ

EDS Permanent Membership Option

EDS members are currently being offered the optionof making a one-time payment of $30 to become a“permanent” member of EDS. The only requirementto become a permanent EDS member (besides the$30 fee) is to maintain your IEEE membership.

Current IEEE and EDS members are able torequest this option via their 2002 IEEE member-ship renewal bill. IEEE members who are notmembers of EDS can also use their 2002 renewalbill to obtain permanent EDS membership. Inaddition, non-members of the IEEE are also ableto request this option by completing the 2002IEEE/EDS membership application form. Weencourage you to take advantage of this EDSoffering and benefit. This option is not availableto students or EDS affiliate members.

Annual CD-ROM Packages Available toEDS Members

The EDS CD ROM Packageincludes all issues for a given yearof Electron Device Letters (EDL) andTransactions on Electron Devices (T-ED), as well as the proceedings ofthe given year of the InternationalElectron Devices Meeting (IEDM).The CDs have an easy to use inter-face and are searchable by author,title and key word. All materialswere published using Adobe Acro-bat Technology. Included on theCD-ROM are versions of AcrobatReader for Microsoft Windows,Apple Macintosh, and UNIX.

Currently, EDS has four CDROM Packages available to itsmembers, i.e. 1997, 1998, 1999,

and 2000. Each is available forUS $25.00 (US $19.00 for stu-dents). If you would like to receivean order form for any of theseproducts, please contact the EDSExecutive Office (contact informa-tion provided on page 2).

For the 2001 CD ROM Package,you can request it in advance as asubscription via your 2002 IEEEMembership Renewal Bill when youreceive it this Fall. The 2001 EDSCD-ROM Package will be availablein June 2002. Once you sign-up toreceive the 2001 package via yourMember Renewal Bill, you will auto-matically be billed each year for sub-sequent versions of the package.


14

Congratulations to the EDS MembersRecently Elected to IEEE Senior Member Grade!

Richard Ash*Goncal Badenes*Shubneesh Batra*Robert BaumannBharat BhuvaMin Cao*Richard G. Carter*Parthasarathi Chakrabarti*Zhi Chen*David Cheskis*Won-Jae Choi*Chorng-Ping ChangSang-Koo Chung*Maria Sanchez Colina*Danilo Crippa*Denice D. DentonCharvaka Duvvury*Kenneth M. Grohman*Jozsef F. GyulaiSung-Ho HahmKarsten Hansen*Katsuhiko HiedaGerhard Hobler*Gary Hong*Yin HuShuji Ikeda*Agisilaos A. Illiadis*Mohamed A. ImamMuhammad Zafar Iqbal*

Herve Jaouen*Rick Jerome*Shiro Kamohara*Takamaro Kikkawa*Tsu-Jae KingSakurai Koichi*Masaaki KuzuharaRichard LaiRoger K. Lake*Chun-Lim Lau*Jong Ho Lee*Jong-Wook LeeJung-Hee Lee*Mankoo LeeSeonghearn Lee*Yong-Hyun Lee*Luke F. LesterJuan A. Lopez-Villanueva*Jianqiang Lu*Wu Lu*Mark W. Maloney*Jack A. Mandelman*Hiroyuki Matsunami*James T. May*Motaharul K. Mazumder*David J. MountainKarim D. Mynbaev*Haruo Nakatsuka*Luis J. Naredo

Muhammad Nawaz*William E. Nehrer*Paul E. NicollianShini OdanakaTohru Oka*Vincent Poon*J.N. RoyMichal Ruzinsky*Frank Schwierz*Hyungsoon Shin*Jai-Hoon Sim*Loren C. Skinner II*Eric G. Stevens*Jordi Sune*Kunihiro Suzuki*Jeremy A. TheilYngve Thodesen*Kraison Throngnumchai*Surya VeeraraghavanJan VobeckyYuri P. VorobjevRichard B. WellsOrly Yadid-PechtChoh-Fei Yeap*Ho-Kwang Yow*Tiemin Zhao*Yuan Fu Zhao*

* = Individual designated EDS as nominating entity

If you have been in professional practice for 10 years, you may be eligible for Senior Membership, the highest grade of membership for which an individ-ual can apply. New senior members receive a wood and bronze plaque and a credit certificate for up to US $25 for a new IEEE society membership. Inaddition, a letter will be sent to employers, recognizing this new status.

For more information on senior member status, visit http://www.ieee.org/membership/grades_cats.html#SENIORMEM To apply for senior member sta-tus, fill out an application at http://www.ieee.org/organizations/rab/md/smelev.htm.

The June 2001 AdCom Meeting washeld in Singapore, in conjunction with the8th International Symposium on the Physi-cal & Failure Analysis of Integrated Circuits.The success of this meeting series was duelargely to the spectacular hospitality andorganization of the Singapore ED Chapter,to which my volunteer and staff colleaguesare deeply indebted. The Region 10 Chap-ters Meeting, hosted by our Regions/Chap-ters Chair, Hiroshi Iwai, was held as part ofthis series and attended by representativesfrom every ED chapter of the Region,except for one student chapter.

In addition to the newly formed Nan-otechnology Technical Committee,chaired by Alan Seabaugh, a committee

on compact modeling was initiated andits first meeting was held in Singapore aspart of the AdCom meeting series. Thelatter is chaired by Narain Arora. Bothtopics are highly interdisciplinary, andwe expect to see substantive interactionswith other IEEE Societies result from activi-ties led by these two groups. In fact, EDSis a major participant in the drive withinthe IEEE Technical Activities Board to forma new Nanotechnology Council.

To commemorate the first fifty years ofthe Electron Devices Society, a booklet oforal history is being prepared and isexpected to be distributed with the April2002 issue of this Newsletter. We aregrateful to Craig Casey for championingthis undertaking. During the AdCom Meet-ing in Singapore, it was decided to holdan event in conjunction with the December

2002 AdCom Meeting to celebrate thismilestone for the Society. Arlene Santoshas volunteered to plan and organize thisevent and she is seeking additional mem-bers to work with her on this project.

It has been indeed a wonderful experi-ence for me to serve as your president forthe past two years. I look forward to con-tinuing to work with many of you asjunior and senior past president in thenext four years, and, if elected to be Divi-sion I Director this year, as your represen-tative on the IEEE Board of Directors forthe next two years. I thank you for allyour support, and once again, I urge allof you, as EDS members, to be involvedin your Society.

Cary Y. YangSanta Clara University

Santa Clara, CA

President’s Message (continued from page 2)


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EDS DISTINGUISHED LECTURER PROGRAM - LECTURERS RESIDING IN CENTRAL, WESTERN & SOUTHWESTERN USA AND LATIN AMERICA (Regions 4-6 & 9)

The EDS Distinguished Lecturer Program exists for the purpose of providing EDS Chapters with a list of quality lecturers who canpotentially give talks at local chapter meetings. To arrange for a lecture, the EDS chapters should contact the Distinguished Lec-turer directly. A general guideline for the visit, but not the absolute rule, is that the lecturer should be able to include the meetingsite with an already planned travel schedule at a small incremental cost to the travel plan. Alternatively, a prior coincident travelplan would not be required if the lecturer is already located within an approximate fifty mile radius of a meeting site. Although theconcept of the program is to have the lecturers minimize travel costs by combining their visits with planned business trips, EDS willhelp subsidize lecturer travel in cases where few/no lecturers will be visiting an area and/or a chapter cannot pay for all the expens-es for a lecturer trip. For a full listing of EDS Distinguished Lecturers and travel plans please contact Laura Riello of the EDS Exec-utive Office (Tel: 1-732-562-3927, Fax: 1-732-235-1626, E-Mail: [email protected]).

ILESANMI ADESIDA Tel: +1 217 244 6379E-Mail: [email protected] Fax: +1 217 244 6375-GaN Processing and Devices-Advanced Fabrication Techniques for Heterostructure FETs-High Speed Optoelectronic Integrated Receivers for Fiber Optical Communications

RAMESH K. AGARWAL Tel: +1 314 935 6091E-Mail: [email protected] Fax: +1 314 935 4014-Application of Computational Fluid Dynamics (CFD) BasedTechnology to Semiconductor-Device Simulation

PETER M. ASBECK Tel: +1 858 534 6713E-Mail: [email protected] Fax: +1 858 534 0556-Heterojunction Bipolar Transistors: Present Applications and Future Directions-Microwave Integrated Circuits Using CMOS on Sapphire

SANJAY KUMAR BANERJEE Tel: +1 512 471 6730E-Mail: [email protected] Fax: +1 512 471 8420-Silicon-Germanium-Carbon Hetero-Epitaxy and Devices-Ultra-Shallow Junctions Using Very Low Energy IonImplantation

-Mos Device Modeling

FRANK S. BARNES Tel: +1 303 492 8225E-Mail: [email protected] Fax: +1 303 492 2758-Voltage Tunable Dielectric Films in Making Microwave PhaseShifters, Voltage Tunable Oscillators and Phased Array Antennas-Health Effects of Radio and Microwaves

DONALD P. BUTLER Tel: +1 214 768 3081E-Mail: [email protected] Fax: +1 214 768 3573-Micromachined Uncooled Infrared Sensors-Electronic Transport and Optical Properties in Semiconducting,Nanocrystalline Y-BA-Cu-O

ZEYNEP CELIK-BUTLER Tel: +1 214 768 3324E-Mail: [email protected] Fax: +1 214 768 3573 -Noise and Performance Issues of Sub-Micron MOSFETs-Uncooled Infrared Detectors-The Other Yttrium Barium Copper Oxide: A Semiconductor-Sensors on Flexible Substrates: Artificial Skin

ROBERT W. DUTTON Tel: +1 415 723 1950E-Mail: [email protected] Fax: +1 415 725 7731-Technology CAD: Computer Simulation of IC Processes and Devices

MAGALI ESTRADA DEL CUETO Tel: +52 5 747 7000 E-Mail: [email protected] Fax: +52 5 747 7114-Thick A-Si: H Devices: Deposition Methods, Characterization andApplications

-Electrical Characterization of Crystalline & Amorphous Silicon Devices

BRUCE F. GRIFFING Tel: +1 518 387 6207E-Mail: [email protected] Fax: +1 518 387 6030-Digital X-Ray Imaging

MARIAN C. HARGIS Tel: +1 765 494 0618E-Mail: [email protected] Fax: +1 765 494 2706

STEVEN J. HILLENIUS Tel: +1 908 582 6539E-Mail: [email protected] Fax: +1 908 582 6000-Not One But a Billion ULSI Technology Manufacturing

ARTURO MORALES-ACEVEDO Tel: +52 5 747-3781E-Mail: [email protected]: +52 5 747-7114 -Recent Developments on Silicon Solar Cell -Modern Applications of Silicon Oxynitride Thin Films in theMicroelectronics Industry

LOUIS C. PARRILLO Tel: +1 512 933 2690E-Mail: [email protected] Fax: +1 512 933 3878-Technology Development in Support of the ULSI Roadmap-Issues in Developing a Manufacturable Interconnect Technology-Advanced Technology Challenges for High-Performance -Microprocessor Applications

JAYASIMHA S. PRASAD Tel: +1 408 914 7632E-Mail: [email protected] Fax: +1 408 914 7878-Heterojunction Bipolar Technology and Applications

LINTON G. SALMON Tel: +1 408 749 4006E-Mail: [email protected] Fax: +1 408 774 8818-Deep Submicron Silicon Processing-Semiconductor Manufacturing-Advanced IC Materials

DIETER K. SCHRODER Tel: +1 602 965 6621E-Mail: [email protected] Fax: +1 602 965 8118-Semiconductor Defects and Their Characterization-Contactless Semiconductor Characterization-Lifetimes in Semiconductors-Electrical Characterization of Semiconductors-Considerations for Future Silicon Devices

KRISHNA SHENAI Tel: +1 312 996 2633E-Mail: [email protected] Fax: +1 312 996 0763-Status and Trends in High-Power Semiconductor Devices-Mixed Device and Circuit Simulation -Low-power Electronics Technologies for Portable and WirelessApplications-Potential of Emerging Wide Bandgap Semiconductor Technologies Computer Integrated Electronics Education


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L. COURT SKINNER, II Tel: +1 408 453 9460E-Mail: [email protected] Fax: +1 408 453 9948-Technology Transfer

JOHANNES (HANS) M.C. STORK Tel: +1 650 857 7461E-Mail: [email protected] Fax: +1 650 813 3381-Where in the Internet is the Computer?-Low Power for Internet Data Centers-Technologies for Ubiquitous Computing Infrastructure

RICHARD B. TRUE Tel: +1 650 591 8411 Ext. 2272E-Mail: [email protected] Fax: +1 650 508 1956-Innovative Vacuum Electron Devices

CARY Y. YANG Tel: +1 408 554 6814E-Mail: [email protected] Fax: +1 408 554 5474-Ultra-thin Oxide Characterization-MOSFET Modeling - Past, Present and Future

PAUL K.L. YU Tel: +1 619 534 6180E-Mail: [email protected] Fax: +1 619 534 0556-Recent Advances in Photonic Devices for RF/Wireless Communication Application

IEEE policy currently allows a 50% dis-count on IEEE dues and one society mem-bership for any individual whose annualsalary is less than US $10,100. Thisoffering is referred to as the MinimumIncome Special Considerations Option.The Electron Devices Society now has anew program for its chapters called theMembership Fee Subsidy Program(MFSP), which will both complement theIEEE Minimum Income offering and pro-vide a significant additional benefit forqualified individuals.

With the EDS Membership Fee Sub-sidy Program, EDS will pay the other50% of the IEEE and EDS dues that arenot covered by IEEE for individuals quali-fying for the Minimum Income option for10 individuals per chapter. These individ-uals can be either prospective new mem-bers or existing members. The programalso will cover student members thatreside in countries that would qualify asMinimum Income. Although the IEEE Mini-

mum Income option allows individuals topurchase publication subscriptions forone society at a 50% reduced rate, theEDS MFSP does not cover the payment ofpublication subscriptions.

If a chapter has individuals who qualifyfor the reduced IEEE Minimum Income offer-ing and the EDS MFSP, all the ChapterChair needs to do is coordinate the obtain-ing and submission of the IEEE/EDS mem-bership application forms (for prospectivenew members) and/or IEEE membershiprenewal bills (for existing members) for theindividuals he/she is proposing to be cov-ered by EDS. The Chapter Chair shouldalso contact the EDS Executive Office toadvise of their participation in the program.All application forms and renewal billsshould be mailed to the EDS ExecutiveOffice. Once received, the applicationforms and bills will be coded by the Execu-tive Office with a special account numberand submitted to the pertinent IEEE depart-ment for processing.

In subsequent years of participation inthe EDS MFSP, the chapter must replace aminimum of six of the ten members whowere paid for by EDS in the previous years.Also, a given member will only be allowedto have his/her memberships paid for byEDS a maximum of two times. These twopolicies will avoid having the same mem-bers receive the benefit each year andencourage new membership. Those EDSmembers receiving the MFSP benefits shouldfulfill the obligation assigned by the localchapter chairs to promote the EDS activities.

Aside from being a program for exist-ing EDS chapters, the EDS MembershipFee Subsidy Program is also an extremelygood means to help facilitate the launch-ing of new chapters in low income geo-graphical areas. For any questionsconcerning the program, please contactthe EDS Executive Office.

James B. KuoUniversity of Waterloo

Waterloo, Canada

EDS Membership Fee Subsidy Program (MFSP)

The Electron Devices Society is committed to providingon-line access to its periodicals. The on-line delivery system,IEEE Xplore, provides IEEE members with the following ben-efits/capabilities:

• Online access to their IEEE personal subscriptions• Full-text PDF image files for content, including all original

charts, graphics, diagrams, photographs and illustrativematerial starting from 1988

• Online available prior to the print equivalent• Free and unlimited access to abstract/citation records• Unlimited printing of bibliographic records and full-text

documents

As an IEEE and EDS member, you have FREE on-line accessto the full articles of the following publications:

EDS NewsletterElectron Device LettersTransactions on Electron DevicesTransactions on Device and Materials ReliabilityElectrochemical and Solid State Letters Transactions on Information TheoryJournal of Lightwave Technology Transactions on Microwave Theory and Techniques Microwave Magazine

Microwave and Wireless Components Letters Journal of Technology Computer Aided DesignTransactions on Ultrasonics, Ferroelectrics and Frequency

Control

Free on-line access was a new benefit given to EDS mem-bers on 1 September 1998 (start of the 1999 IEEE member-ship cycle).

In addition to the on-line access to periodicals includedwith EDS membership, Transactions on Semiconductor Manu-facturing and the Journal of Microelectromechanical Systemsare available on-line to their respective member subscribers ofthe print version.

To use the Xplore system, you must establish an IEEE WebAccount. This account is also used for renewing your IEEEmembership online. If you need to establish an IEEE WebAccount, please visit http://www.ieee.org/web/accounts.

IEEE members can go to the Xplore site through the URLhttp://www.ieee.org/ieeexplore. We encourage all membersof the Society to use this dynamic system.

Renuka P. JindalAgere SystemsMurray Hill, NJ

On-Line Access to IEEE Journals Available to EDS Members


17

USA, Canada and LatinAmerica (Regions 1-6, 7 & 9)AP/CAS/ED/MTT Kitchener-Waterloo Chapterby Arokia Nathan

Over the first quarter of 2001, theChapter has hosted several very interestinglectures at the University of Waterloo, whichwere well attended by IEEE members.

Jan Lienemann from IMTEK-Institute ofMicrosystem Technology, University ofFreiburg, Germany, gave a presentationon Optimization of Integrated MagneticField Sensors.

Frauke Greve from the Physical Electron-ics Laboratory, ETH Zürich, Switzerland,gave a presentation on ElectrochemicalEtch-Stop Techniques for MEMS Fabrication.

Prof. Niall Shanks from the Depart-ments of Philosophy and Physics andAstronomy, East Tennessee State Universi-ty, gave a very interesting lecture on Engi-neering and the Rise of Science.

Everyone knows that today scienceand engineering go hand in hand. Butwhat role did engineers play in the rise ofmodern science during the 16th and 17thcenturies? Today we know that biomed-ical research is heavily dependent on thefruits of the engineer’s labors. Shanksargued that engineers played a crucialrole in the rise of modern medicine, andthus in the rise of modern science itself.

Shanks observed that sophisticatedmachine technologies pre-date the rise ofmodern science, and western medievalculture was a mechanically sophisticatedculture — though possessing little that wewould recognize as science. Shanksargued that modern science arose againstthis mechanically sophisticated culturalbackground. One of the central locationsin the story of science was the medicalschool at the University of Padua in whatis now Italy. Many key figures in the riseof modern science, such as Vesalius,Copernicus, Fracastorius, Harvey andGalileo, studied there. As renaissancemedical researchers entered the unfamiliarterrain of anatomy and physiology, theyfound it very useful to think about whatthey saw in the light of familiar mechani-cal systems and processes. These mechan-ical analogies and metaphors constitute

an important ingredient in what Shanksreferred to as “machine thinking”. The oth-er ingredient to machine thinking was amethod borrowed from medicine: themethod of analysis and synthesis. Accord-ing to this method, to understand a com-plex system you analyse the system into itsparts, study the properties of the parts, aswell as their structural and dynamical rela-tionships, and then synthesize this knowl-edge into an integrated understanding ofthe entire complex system.

Machine thinking revolutionized medi-cine. And, thanks to figures such asGalileo, it revolutionized physics. By theend of the 17th century, thanks to New-ton, a worldview had crystallized accord-ing to which the universe itself was agiant machine that not only obeyedmechanical principles but could be under-stood with the aid of other machines ofour own design. The result was very muchan engineer’s view of nature.

The event was well celebrated in termsof a technical get-together of IEEE membersfrom the Kitchener-Waterloo Section andmembers of the Department of History.

—Arokia Nathan, Editor

2002 International CaracasConference on Devices, Circuits andSystems (ICCDCS)by Adelmo Ortiz-Conde

The Fourth IEEE International CaracasConference on Devices, Circuits and Sys-tems (ICCDCS) will be held April 17–19,

2002, in Aruba’s Seaport ConferenceCenter. Aruba is a tourist island withinthe Kingdom of the Netherlands, situatedin the southern Caribbean, 15 miles northof Venezuela’s coast, and about two-and-a-half hours by air from Miami. This con-ference is organized by UniversidadSimon Bolivar (Venezuela) and Universityof Central Florida (USA). ICCDCSreceives technical co-sponsorship fromIEEE’s Electron Devices Society and Cir-cuits and Systems Society, VenezuelanEDS/CAS/PEL Joint Chapter, and the sup-port of Motorola. Prospective authors areinvited to submit contributions in the formof original full manuscripts for oral pre-sentation and publication in the confer-ence proceedings, dealing with newresults, relevant ideas, or innovations thatadvance the state-of-the-art in the areasof: Solid State Devices, Solid State Cir-cuits, Power Electronics, Instrumentation &Measurements, Digital Signal Processing,and Telecommunications. For additionalinformation, please visit the conferenceweb site at pancho.labc.usb.ve/ICCD-CS2002. Or send E-Mail [email protected]. TEL: +58-212-9064010,FAX: +58-212-9064025. Other E-Mailcontacts: General Chair, Juin J. Liou [email protected]; Tech. ProgramChair, Adelmo Ortiz_Conde [email protected]; Local ArrangementsChair, Francisco J. Garcia Sanchez [email protected]; Finances: Giovanni DeMercato at [email protected].

—Adelmo Ortiz Conde, Editor

Europe, Middle East &Africa (Region 8) ED/MTT/AP St. Petersburg Chapterby Sergei Zagriadski

The Chapter activities during theSpring and Summer of 2001 were asstated below:

An international seminar “Day on Dif-fraction in New Millennium” (May29–31, 2001) was organized by the fac-ulty of Physics of the St. Petersburg StateUniversity, St. Petersburg Branch ofSteklov Mathematical Institute and EulerInternational Mathematical Institute. It isan annual seminar on mathematical meth-

Regional and Chapter News

Prof. Niall Shanks giving his lecture on Engineeringand the Rise of Science at the University of

Waterloo. The event was jointly sponsored by theIEEE Kitchener-Waterloo Section and the

Department of History, University of Waterloo.


18

ods in diffraction theory, traditionally heldsince the late 1960s. This year the semi-nar was co-sponsored by the RussianFoundation for Basic Researches, CityGovernment of St. Petersburg, and the St.Petersburg ED/MTT/AP Chapter. Themain topics of the seminar were the fol-lowing: Mathematical Aspects of WavePropagation; Elastic Waves; Plates andShells; Diffraction by a Cone; Wave-guides and Mode’s Diffraction; NonlinearWave Equations and Problems; Non-Sta-tionary Phenomena; Scattering and Dif-fraction; Complex Rays; QuantumScattering; Waves in Random Media;Trapped Modes; Antennas and Radia-tion; Non-Adiabatic Transitions; High-Fre-quency and Semi-Classical Asymptotics;and Numerical Approaches. The Seminarbrought together over 90 scientists work-ing in the area of mathematical theory ofdiffraction and propagation andresearchers interested in applications ofwave phenomena of various natures.Over 70 oral reports were presented byparticipants from Russia, Belarus, U.K.,USA, Israel, Japan, France, Iran, Cana-da, Czech Republic, and Italy.

The 8th International Student Seminaron High Temperature Superconductors(HTS) and Ferroelectrics at Microwaveswas held June 4–8, 2001, in St. Peters-burg. It was organized by the St. Peters-burg State Electrotechnical University andco-sponsored by the St. PetersburgED/MTT/AP Chapter. There were 6 invit-ed lectures presented by distinguished lec-turers from 4 universities of Russia,Switzerland, Sweden, and USA and 14oral reports by students from 3 universi-ties of Russia, Finland, and Germany,which were devoted to theory andmicrowave applications of HTS. The totalnumber of participants was over 30.

Invited lectures by IEEE Fellow, Prof.Magdy Iskander (University of Utah), inthe framework of the Distinguished Lectur-er Program were held June 25–26,2001, at the Radio-Physical Faculty of theSt. Petersburg State Technical Universityand at the St. Petersburg State Elec-trotechnical University. The topics of thelectures were the following: “The prob-lems of computer based engineering edu-cation,” “The low cost phased antennaarray design for mobile and satelliteapplications,” and “Propagation modelsfor wireless communications.”

Student competition in problem solvingfor junior students studying radioengineer-ing at regional universities (April 29,2001) was organized by the St. Peters-

burg State Technical University and theSt. Petersburg State Electrotechnical Uni-versity. Over 50 students from 5 universi-ties took part in the competition.

For further information about confer-ences and seminars organized in St.Petersburg and its region by the Chapter,please contact Prof. Sergei Zagriadski; E-Mail: [email protected].

MTT/ED/AP/CPMT/SSC WestUkraine Chapterby Mykhaylo Andriychuk

Currently there are 33 IEEE Membersin our Chapter. Two new IEEE Memberswere recruited in 2001. The membershipof 5 IEEE Members formerly subsidizedby the MTT-S, ED-S, and AP-S is support-ed partly from the Chapter budget now.A group of 15 IEEE Student Members isalso supported financially from the Chap-ter’s budget.

Our Chapter has organized a series ofsuccessful events in the previous period.They include the 6th International Confer-ence on the Experience of Designing andApplication of CAD Systems in Microelec-tronics (CADSM 2001). As were the fivesuccessful previous meetings, this confer-ence was held 12–17 February 2001, inSlavsko (Lviv Region) situated in theCarpathian Mountains and an approxi-mately 130-km drive south of Lviv. Theparticular focus of this conference waspaid to the questions of development andapplication of simulation tools andmethodologies for analysis of device per-formance, heat distribution, and processfabrication in microelectronics. The con-ference was organized by Lviv Polytech-nic National University. The IEEEED-Society provided the technical co-sponsorship. Conference participants rep-resented 7 European countries (Austria,Poland, Russia, France, Germany, Bel-gium, and Ukraine). Three best reportsmade by Young Scientists were awardedthanks to the financial support of theChapter. Awarded were Marcin Piasecki(Warsaw University of Technology,Poland) for “Improved model of smartantenna controlled by genetic algorithm,”Pavel Ivanov (Kharkiv State University ofRadioelectronics, Ukraine) for “Laser CADIII software package for quantum welllaser simulation,” and Irena Kazymyra(Lviv Polytechnic National University, Lviv)for “The use of ICs simplified models insolving multiple-criterion parametric opti-mization problems.”

The technical and financial support ofthe West Ukraine Chapter was provided

for the 59th Student Scientific Conferenceof Radioengineering Faculty, NationalUniversity “Lvivska Politechnika.” The Con-ference was held at the Faculty of Radio-engineering on April 5, 2001, thanks tothe efforts of Telecommunication Depart-ment Chair, Dr. Mykhaylo Klymash, andWest Ukraine Chapter Vice-Chair, Dr.Bogdan Koval. A total of 23 reports werepresented in the following scientific areas:mobile communications and networksdesign, signal processing and medicalapplications, and electromagnetic wavepropagation in electronic devices.

The next activity was the 16th RegionalScientific and Technical Conference ofYoung Scientists and Specialists (YSC-2001), held at Karpenko Physiko-Mechan-ical Institute (PMI), National Academy ofSciences of Ukraine, Lviv, May 16–18,2001. The Young Scientist Council of PMIorganized it. The IEEE MTT/ED/AP/CPMT/SSC West Ukraine Chapter wasthe sponsor of the conference, and it alsoprovided technical co-sponsorship. The 75papers by 106 authors from Ukraine andPoland were included in the ConferenceProgram. The short abstracts of paperswere published before the event. Twospeakers were nominated by the chapteras Best Young Speakers, namely A. I.Koval for “About estimation of the rate dis-tortion function for generalized Gaussiandistribution under mean square error crite-ria,” and V. P. Tsisar for “Peculiarities ofoxide phase formation on the chromicsteel surface contacting with oxygen con-tent lead” (both from PMI). The bestpapers were published in the post-confer-ence special issue.

During the reporting period, the chap-ter organized 9 technical meetings.

IEEE MTT/ED/AP/CPMT Saratov-Penza Chapterby Michael Davidovich

The first half of 2001 in Saratov hasbeen marked by two conferences on elec-tron devices and microwave topics. TheInternational Inter-University Conferenceon Contemporary Problems of MicrowaveElectronics and Radiophysics was held inMarch 2001, in the sanatorium Salute.More than 120 participants of this meet-ing got the opportunity to present and dis-cuss their new researches oncontemporary problems of microwaveelectronics and radiophysics in the pic-turesque Saratov suburb from March 20to 24. The conference organizers werethe Ministry of Common and ProfessionalEducation of Russian Federation, Russian


19

Foundation for Basic Research, SaratovN. G.Chernyshevskiy State University,State Educational-Scientific Center “Col-lege,” and IEEE MTT/ED/AP CPMT Sara-tov-Penza Chapter. The scope of theconference is to present and discuss mod-ern experimental and theoretical resultson the following topics and related areas:

• Physics of free charges - electromagnet-ic field interaction,

• Vacuum microwave electronics,• Vacuum microelectronics,• Solid-state microwave electronics,• Chaos and structures formation in

electronics and radiophysics, and• Applications of ultra-high frequencies.The conference program included

review lectures (45 min), topical lectures(30 min), oral presentation of contributedpapers (20 min), and a poster session. TheChairman was Prof. Dmitry I. Trubetskov,President of Saratov State University. Scien-tists from Russia, Ukraine, and Korea wereincluded in the Program Committee.

The second conference held recently(June 25–29, 2001) at the same locationwas the 8th International Workshop onBeam Dynamics & Optimization. This work-shop was organized by Saratov State Uni-versity, St. Petersburg State University, JointInstitute of Nuclear Research (Dubna), Insti-tute of High Energy Physics (Protvino), Peo-ple’s Friendship University of Russia(Moscow), and D. V. Efremov Institute ofElectrophysical Apparatus (St. Petersburg).The Organization Committee and ProgramCommittee contained scientists from Russia,Ukraine, Germany, Japan, France, andUSA. The Local Organizing Committee waschaired by Prof. V. P. Stepanchuk.

During the last half-year period fourregular seminars have been organized bythe Saratov-Penza Chapter on microwaveand antennas and propagation topics.

For more detailed information, seehttp://www.cas.ssu.runnet.ru/uhf01/uhf01.html or contact Prof. Michael V.

Davidovich (E-Mail: [email protected]).

—Ninoslav Stojadinovic, Editor

ED Sweden Chapterby Mikael Östling

During March 5-7, 2001, the SwedenED Chapter together with KTH arrangedthe 5th European Workshop on Materialsfor Advanced Metallization, MAM 2001.The venue was Sigtuna, a scenic old townsome 40 km north of the city of Stock-holm. Altogether, 65 participants came tothis year’s MAM, and presented 45papers. A special volume of Microelec-tronic Engineering will be published thatcontains 32 of them as full-length manu-scripts. Professor Hiroshi Iwai gave aninvited talk as an EDS DL on “NiSi Sali-cide technology for scaled CMOS.”

In June, Dr. Allen Hefner Jr., NationalInstitute of Standards and Technology(NIST), USA, gave a chapter presentationentitled “Compact Modeling of IGBT andSiC devices.”

Later the same month, Dr. ChristianBrylinski, Thales, France, gave a technicalpresentation on silicon carbide microwavepower devices where the current status ofSiC process and device technology wasreviewed and which commercial implica-tions we may expect in the near future.

The upcoming ED Sweden chapterprogram will host a PhD student sympo-sium on semiconductor process, devices,and circuit modeling.

—Mikael Östling, Editor

Asia & Pacific (Region 10) AP/ED Bombay Chapterby Juzer Vasi

During April–June, 2001, the AP/EDBombay Chapter organized two events,listed below.

On June 12, 2001, Dr. Dipak K.Basa, Utkal University, Bhubhaneshwar,

India, gave a talk on “Composition andelectrical properties of SiN films.” Dr.Basa also interacted with faculty membersand PhD students at IIT Bombay, and dis-cussed possible research collaboration.

On June 29, 2001, Dr. Prasad Raje,CEO and Founder, Instantis, talked on “ASilicon Valley Startup Story—An ongoingperspective,” which was enthusiasticallyreceived, especially by the student com-munity. Dr. Raje covered various aspectsof start-up companies, both technical andfinancial.

ED/MTT India Chapterby K. S. Chari

The Chapter, in association with theIEEE Delhi section and the Delhi Collegeof Engineering (DCE), arranged an inter-action with graduate students of Electricaland Electronics Engineering of DCE on 12May 2001. During the occasion, theChapter Chair addressed the participantson issues in microelectronics, and partici-pated in the evaluation of studies done intheir industrial training placements. Inresponse to the suggestion by studentsand faculty of DCE to foster innovation inproduct application, the Chapter Chairhas proposed up to 2 awards in the areasof electronics and communication underthe India EDS Chapter. These awardscould be distributed annually at the gradu-ation function. This is currently being pur-sued with the DCE management.

The Chapter Chair has visited the Hari-ta Ecological Institute (HEI) and the HaritaJunior College at Paloncha of AndhraPradesh during 8–9 June 2001 to initiatenew STAR activity. This is to enhance STARpenetration as a result of the extra fundingprovided by the past IEEE President, Prof.Bruce Eisenstein. The Chapter Chairaddressed a gathering of the pre-collegestudents of HEI. Both the students and facul-ty greatly appreciated the effort of bring-ing in the STAR program to the remote

Dr. Prasad Raje (third from left) and Mrs. Raje with faculty members at IIT Bombay. A section of EDS STAR students and teachers from Haritha Ecological Institute,Haritha and Chaitnya Haritha Junior Colleges at Paloncha, Andhra Pradesh.


20

corner of the country, especiallythe rural agrarian belt that is faraway from the industrial centers.Dr. P. Sudhakar and Mrs. UshaRani hosted the visit. A variety ofevents to be held under the STARprogram were planned.

Two other STAR programs hadalso been organized. The firstone is the Science Forum. TheSTAR students from MaharanaPratap School, DAV School,and Aggrasain School partici-pated in the model exhibition,poster, and quiz competitions. The eventwas held at the Maharana Pratap Schoolon 5 December 2000. A panel consistingof the Chapter Chair, Dr. Anil Vohra, andMs. Anurekha Sharma (Kurukshetra Univer-sity) assessed the performance of students.A total of 7 prizes from the EDS chapterwere given to the winners of events. Thesecond event was an on-site visit to theindustrial unit of United Rice Land at Kruk-shetra on 4 January 2001. Mr. RajeshNagru explained to students the modernelectronic methods of paddy storage, con-version to rice, and the qualification proce-dures in the laboratory. Ms. Monika Guptaof Aggrasain School organized this eventtogether with the STAR coordinator.

Dr. Govind, the Chapter Secretary,attended the MTT Chapter Chairs meetingheld in Phoenix, AZ, on 22 May 2001.The Chapter Secretary discussed withmembers of the India sub-continent andMTT fellows on ways of strengthening thechapter activities. The Chairman of MTTSChapter activities, Jerry Fiedziuszko, pre-sented at the meeting the certificate ofappreciation to the Chapter Chair and itwas received by Dr. Govind on behalf ofthe Chapter Chair.

—W. K. Choi, Editor

ED Kansai Chapterby Hiroshi Nozawa

We organized five technical sessionsby invited DLs (distinguished lecturers) inKansai Chapter for the second quarter.Professor Ishiwara of Tokyo Institute ofTechnology, IEEE Fellow, was invited andlectured at Kyoto University in Kyoto,Japan, 24 April 2001. His host was Dr.Nozawa, Professor of Kyoto Universityand the Chair of ED Kansai Chapter. Hetalked about technical trends of ferroelec-tric memory to 45 people (mostly gradu-ate students). Others lectured at Campusplaza Kyoto in Kyoto, Japan, June 2001.Dr. Shibib, IEEE Fellow, lectured aboutdielectric isolation and silicon-on-insulator

for analog and high voltage ICs, 8 June2001. Twenty people attended the meet-ing. Dr. Shibib is a Consulting Member ofTechnical Staff, Agere Systems, Reading,PA, USA, a spin-off company of LucentTechnologies. Dr. Takasu of Rohmchaired the lecture and Q & A. Three lec-turers, Dr. Manchanda, Prof. Jack C. Lee,and Dr. Taur were invited and gave talkssuccessively, 15 June 2001, following theSymposium on VLSI Technology. Therewere 73 attendees for the talks. Dr. Niwaof Matsushita served as a session chairfor lectures by Dr. Manchanda and Prof.Jack C. Lee. Dr. Lalita Manchanda is aDistinguished Member of Technical Staffwith Electronics Device Research of AgereSystems at Murray Hill, NJ. She presenteda talk about novel devices and materialsfor system on a chip, focused on logic,ASIC, and SOC. Prof. Jack C. Lee pre-sented high-K gate dielectrics: ZrO2,HfO2, and their silicates. Jack C. Lee is aProfessor of the Electrical and ComputerEngineering at the University of Texas atAustin. At the final session that Dr.Nishimura of Mitsubishi served as achair, Dr. Yuan Taur, Fellow of the IEEE,lectured. He has been with the SiliconTechnology Department of IBM Thomas J.Watson Research Center, YorktownHeights, NY. His presentation was enti-tled, “The Limit of CMOS Scaling: HowFar Can We Extend It.” Every lectureoverran the allowed time due to extendeddiscussions. Since these successful DLmeetings were absolutely attributed to theDLs’ voluntary efforts, the Kansai Chapterdeeply appreciates their activities devot-ed to all of the participants.

ED Korea Council Chapterby Se-Geun Park

The 2001 Asia-Pacific Workshop onFundamental and Application ofAdvanced Semiconductor Devices(AWADS) was held at the KAL Hotel,Seogwipo-shi, Cheju-do, Korea for 4 days

beginning July 4, 2001. It was jointlyorganized by the Institute of ElectronicsEngineers of Korea (IEEK), the Institute ofElectronics, Information and Communica-tion Engineers (IEICE) of Japan, IEEEEDS–Tokyo Chapter, and IEEE EDS–KoreaChapter. More than 45 papers were pre-sented in oral or poster format, and therewas a tutorial on the subject of nanotech-nology before the 3-day presentation ses-sion. The ED Korea Chapter has activelytaken part in the “Video Lending Library”program of EDS, and this June videotapes of the 2000 IEDM short course wererented and circulated among local mem-bers. The title was “Technology for theInternet Era,” and the chapter meetingwas held at Inha University after watchingthe short courses.

Report on the 2001 InternationalSymposium on PowerSemiconductor Devices & ICs (ISPSD 2001)by Toshiaki Yachi

The 13th International Symposium onPower Semiconductor Devices & ICs(ISPSD 2001) was held at Osaka Interna-tional Convention Center, Osaka, Japan,June 4–7, 2001. The conference wassponsored by the Institute of ElectricalEngineering of Japan and co-sponsoredby the IEEE Electron Devices Society.ISPSD is the most important internationalconference in the field of power semicon-ductor devices & ICs. It is held annuallywith the site rotating between Japan,North America, and Europe. ISPSD 2001was the first of the 21st century. In com-memoration of this, ISPSD ContributoryAwards were awarded to the six ISPSDmembers who had made outstanding con-tributions to launching and organizingISPSD from the very beginning. A total of426 people from 18 countries attendedthe conference, which was composed of2 plenary sessions and 13 regular ses-sions. The plenary sessions featured invit-

From left to right: Prof. H. Ishiwara, Dr. M. A. Shibib, Dr. L. Manchanda, Prof. J. C. Lee, and Dr. Y. Taur.


21

ed talks on 6 topics by leaders in thepower electronics field. These were Trans-mission and Distribution by Dr. RahulChokhawala, Pulsed Power by Prof.Shozo Ishii, Car Electronics by Prof. JohnG. Kassakian, EMI/EMC by Prof. Tamot-su Ninomiya, Transportation by Dr. IngoHerbst, and Home Appliances by Dr.Teruya Tanaka. Ninety-five regularpapers were presented as oral and posterpresentations in the sessions on SiCdevices, IGBTs, MOSFETs, LDMOSFETs,RF devices, high-voltage devices, packag-ing and reliability, and super junction.The workshop also provided an opportu-nity to discuss road maps of power semi-conductor development in the early 21stcentury. This resulted in valuable roadmaps for high power devices, discretepower devices, integrated power devices,and RF power devices. The next confer-ence, ISPSD 2002, will be held in SantaFe, NM, USA, June 3–7, 2002. Fordetails, please contact Mr. Taylor R.Efland, General Chairman for ISPSD2002, E-Mail: [email protected] and look atthe ISPSD’02 Conference Web Site:http://www.ti.com/ispsd02.

Conference Report on IPRM’01by Yuichi Matsushima

The Thirteenth International Conferenceon Indium Phosphide and Related Materi-als (IPRM’01) was held 14–18 May 2001,at Nara, Japan. The total number of partic-ipants was over 470 from 19 countries,which was a record for this conference.Prof. H. Asahi (Osaka University) and Dr.Y. Matsushima (KDDI R&D Labs) were theConference Chair and Program Chair,respectively. The total number of presentedpapers was 176, in which there were 3plenary talks, 19 invited talks, 142 regularpapers, and 12 post deadline papers. Asfor each technical area, there were 42optoelectronics, 43 electron device, 17processing, 25 epitaxy, 20 bulk & charac-terization, and 29 new materials & nanos-tructures. Based on recent businessactivities in the Internet world, people con-cerned with optical and mobile communi-cations began to pay more attention to thekey devices made by InP-related materials.According to this background, a shortcourse (regarding OEICs/PICs, photoniccrystals, VCSELs) and a technical exhibi-tion were successfully carried out with

many attendees. The conference beganwith three outstanding plenary talks: Dr.M. Fukuta (Fujitsu Quantum Device)reviewed the “Business Impact of OpticalDevices on Internet.” Prof. N. Ledentsov(Ioffe Institute) presented recent results on“Self-Organized InGaAs Quantum Dots forAdvanced Applications in Optoelectron-ics.” Finally, Dr. P. Smith (BAY Systems)described the “Advances in InP HEMTTechnology for High Frequency Applica-tions.” Technical topics of this conferenceseemed to move from bulk/epitaxy to opti-cal/electron device fields. In the optoelec-tronics field, rapid developments of verticalcavity surface emitting lasers (VCSEL) forcommercial use were intensively presentedand new structures of semiconductor suchas photonic crystals and quantum dotswere also widely discussed in terms of opti-cal device applications. In electron devicesmade by InP-related materials, 400-GHzcut-off frequency operation was reported inHEMT with 25-nm gate-length for the firsttime. It was common understanding thatthe studies for large-diameter InP-substratessuch as 4–6 inch scale was very importantfor future cost reduction of devices. Thenext conference (IPRM’02) will be held atStockholm, Sweden, during 12–16 May2002. Refer to http://www.congrex.com/iprm2002. —Hisayo S. Momose, Editor

ED Taipei Chapter: Report of the2001 VLSI-TSAby Tahui Wang

The 2001 International Symposium onVLSI Technology, Systems and Applica-tions (VLSI-TSA) was held in Hsinchu, Tai-

IPRM 2001.From left: Steve Chung (ED Taipei Chair), Tak Ning (Symp. Chair), Lewis Terman

(Symp. Co-chair), Ran Yan (Tech. Chair), J.-M. Shyu (Tech. Co-Chair).

ISPSD 2001 administration committee meeting members.

continued on page 23


22

EDS Meetings Calendar(As of 24 August 2001)

The complete EDS Calendar can be found at our web site:http://www.ieee.org/organizations/society/eds/EDSCal.html. Please visit!

October 1 - 5, 2001, T European Symposiumon Reliability of Electron Devices, FailurePhysics and Analysis Location: Palatium ofArcachon, Arcachon, France Contact: NathalieLabat, Universite Bordeaux 1 - Laboratoire IXL, 351,cours de la Liberation, TALENCE Cedex, France33405 Tel: +33 05 56 84 65 51 Fax: +33 05 5684 28 07 E-Mail: [email protected] Deadline:3/14/01 www: http://www.ixl.u-bordeaux.fr

October 1 - 4, 2001, * IEEE International SOIConference Location: Sheraton Tamarron Resort,Durango, CO, USA Contact: Bobbi Armbruster,BACM, 520 Washington Blvd. Suite 350, MarinaDel Rey, CA, USA 90292 Tel: +1 310 305 7885Fax: +1 310 305 1038 E-Mail: [email protected] Deadline: 5/10/01 www: http://www.soiconference.org

October 1 - 4, 2001, T International Sympo-sium on Compound Semiconductors Loca-tion: Komaba Campus, University of Tokyo, Tokyo,Japan Contact: Kazuhiko Hirakawa, Institute ofIndustrial Science, University of Tokyo, 4-6-1 Koma-ba, Meguro-ku, Tokyo 153-8505, Japan Tel: +813 5452 6260 Fax: +81 3 5452 6262 E-Mail:[email protected] Deadline:6/15/01 www: http://www.iscs.iis.u-tokyo.ac.jp

October 2 - 7, 2001, T International Schoolon Chaotic Oscillations and Pattern Forma-tion Location: Holiday Hotel “Volzhskie Dali”,Saratov, Russia Contact: Dmitry Trubestskov, Sara-tov State University - State Ed. & Scientific Centre“College”, 83 Astrakhanskaya, Saratov, Russia410026 Tel: +7 8452 241696 Fax: +78452523864 E-Mail: [email protected] Deadline:Not Available www: http://cas.ssu.runnet.ru/chaos01/chaos01.html

October 8 - 10, 2001, @ IEEE InternationalSymposium on Semiconductor Manufactur-ing Location: Fairmont Hotel, San Jose, CA, USAContact: Suzanne Harkless, McGettigan MeetingsPlus, 1777 Botelho Drive, Walnut Creek, CA, USA94596 Tel: +1 925 287 5237 Fax: +1 925 2875300 E-Mail: [email protected] Dead-line: 4/20/01 www: http://www.issm.com

October 9 - 13, 2001, * International Semi-conductor Conference Location: Sinaia Hotel,Sinaia, Romania Contact: Doina Vancu, IMT-Bucharest, CAS Office, PO Box 38-160, Bucharest,Romania 72225 Tel: +40 1 490 82 36 Fax: +401 490 82 38 E-Mail: [email protected] Deadline:4/15/01 www: http://www.imt.ro/CAS

October 15 - 18, 2001, T International Work-shop on Computational Electronics Location:University of Illinois, Urbana, IL, USA Contact:Umberto Ravaioli, University of Illinois at Urbana-Champaign, 3255 Beckman Institute 405 N.Mathews Avenue, Urbana, IL, USA 61801 Tel: +1217 244 5765 Fax: +1 217 244 4333 E-Mail:[email protected] Deadline: 6/15/01 www:http://www.ceg.uiuc.edu/iwce8

October 15 - 18, 2001, * IEEE InternationalIntegrated Reliability Workshop Location:Stanford Sierra Camp, Lake Tahoe, CA, USA Con-tact: Linda Head, Rowan University, 201 MullicaRd., Glassboro, NJ, USA 08028 Tel: +1 856 2565335 Fax: +1 856 256 5241 E-Mail:[email protected] Deadline: 7/6/01 www:http://www.irps.org/irw/index.html

October 21, 2001, T Gallium Arsenide Relia-bility Workshop Location: Renaissance Harbor-place Hotel, Baltimore, MD, USA Contact: AnthonyImmorlica, Sanders, A Lockheed Martin Company,65 Spit Brook Road, Nashua, NH, USA 03060Tel: +1 603 885 1100 Fax: +1 603 885 6061 E-Mail: [email protected] Deadline:8/6/01 www: http://www.jedec.org/gaas

October 21 - 24, 2001, * IEEE GalliumArsenide Integrated Circuits SymposiumLocation: Renaissance Harborplace Hotel, Baltimore,MD, USA Contact: Mary Clemente, IEEE, 445 HoesLane, Piscataway, NJ, USA 08855 Tel: +1 732562 5350 Fax: +1 732 981 1203 E-Mail:[email protected] Deadline: 4/18/01 www:http://www.gaasic.org

October 22 - 25, 2001, T International Con-ference on Solid-State & Integrated CircuitsTechnology Location: Hotel Equatorial, Shanghai,

China Contact: Mengqi Zhou, Chinese Institute ofElectronics, PO Box 165, Beijing, China 100036Tel: +86 10 6816 0825 Fax: +86 10 6816 0825E-Mail: [email protected] Deadline:4/1/01 www: http://www.cie-china.org

October 22 - 26, 2001, T European Photo-voltaic Solar Energy Conference and Exhi-bition Location: International Congress Centre,Munich, Germany Contact: Bettina Kaisa, WIP, Syl-vensteinstr. 2, Muenchen, Germany HD-81369 Tel:Not Available Fax: Not Available E-Mail:[email protected] Deadline: Not Avail-able www: http://www-munich.de

October 22 - 25, 2001, T International Confer-ence on Noise in Physical Systems and 1/FFluctuations Location: University of Florida Hoteland Conf. Center, Gainesville, FL, USA Contact:Gijs Bosman, University of Florida, College of Engrg,565 Engrg. Bldg. #33, Gainesville, FL, USA 32608Tel: +1 352 392 0910 Fax: +1 352 392 8381 E-Mail: [email protected] Deadline: 2/1/01www: http://www.doce-conferences.ufl.edu/ICNF/

October 28 - 30, 2001, * IEEE Conference onNanotechnology Location: Outrigger WaileaResort, Maui, HI, USA Contact: Toshio Fukuda,Nagoya University, Center for CooperativeResearch in Advanced Science and Tech., 1,Furo-cho, Chikusa-ku, Nagoya, Japan 464-8603Tel: +81 52 789 4478 Fax: +81 52 789 3115E-Mail: [email protected] Deadline:5/31/01 www: http://www.mein.nagoya-u.ac.jp/IEEE-NANO

October 28 - November 2, 2001, # Internation-al Conference on Silicon Carbide and Relat-ed Materials Location: Tsukuba Congress Center,Tsukuba, Japan Contact: Hajime Okumura, Elec-trotechnical Laboratory, 1-1-4 Umezono, Tsukuba,Ibaraki, Japan 305-8565 Tel: +81 298 61 5431Fax: +81 298 61 5434 E-Mail: [email protected] Deadline: 6/1/01 www: http://www.icscrm2001.gr.jp

October 29 - 31, 2001, T International Con-ference on Microelectronics Location: Ecole

* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ‘Sponsorship/Co-Sponsorship’ and ‘Technical Co-Sponsorship’T = Technical Co-Sponsorship Support # = Cooperation Support


23

Mohammadia d’Ingenieurs, Rabat, Morocco Con-tact: Mohamed Elmasry, University of Waterloo,VLSI Research Group, ECE Department, Waterloo,Ontario, Canada N2L 3G1 Tel: +1 519 8884567 ext. 3753 Fax: +1 519 746 5195 E-Mail:[email protected] Deadline: 4/1/01www: Not Available

October 31 - November 2, 2001, T Internation-al Microprocesses and NanotechnologyConference Location: Kunibiki Messe, Masue,Shimane, Japan Contact: Hiroaki Masuko, Busi-ness Center for Academic Societies Japan, 5-16-9Honkomagome, Bunkyo-ku, Tokyo, Japan 113-8622 Tel: +81 3 5814 5800 Fax: +81 3 58145823 E-Mail: [email protected] Deadline:7/1/01 www: http://www.nano.ee.es.osaka-u.ac.jp/mnc

November 1 - 2, 2001, T International Work-shop on Gate Insulators Location: Shufu-Kaikan, Tokyo, Japan Contact: Hiroshi Iwai,Interdisciplinary Graduate School of Science & Engi-neering, Tokyo Institute of Technology, 4259 Nagat-suta, Midori-ku, Yokohama, Japan 226-8502 Tel:+81 45 924 5471 Fax: +81 45 924 5487 E-Mail: [email protected] Deadline: 8/10/01www: http://www.iwai.ae.titech.ac.jp/english/iwgi/index.html

November 4 - 8, 2001, # IEEE InternationalConference on Computer Aided DesignLocation: DoubleTree Hotel, San Jose, CA, USAContact: Kathy MacLennan, MP Associates, Inc.,5305 Spine Road, Suite A, Boulder, CO, USA80301 Tel: +1 303 530 4562 Fax: +1 303 5304334 E-Mail: [email protected] Deadline: 4/9/01www: http://www.iccad.com

November 7, 2001, T IEEE Electron DevicesActivities in Western New York Confer-ence Location: Rochester Institute of Technology,Rochester, NY, USA Contact: Karl Hirschman, RIT

Microelectronic Engineering, 82 Lomb MemorialDrive, Rochester, NY, USA 14623-5604 Tel: +1716 475 5130 Fax: +1 716 475 5041 E-Mail:[email protected] Deadline: Not Available www:http://www.microe.rit.edu/eds2k

November 13, 2001, @ Workshop on Pho-tonics & Its Applications Location: Nat’l Inst.ofLaser Enhanced Sciences at Cairo Uni, Cairo,Egypt Contact: Ibrahim Salem, Academy of Scien-tific Res & Tech, Dept. of Scientific Societies & Int’lUnions, 101 Kasr EL-Eini St, Cairo, Egypt Tel: +202 258 0256 Fax: +20 2 792 1270 E-Mail:[email protected] Deadline: Not Available www:Not Available

November 15 - 16, 2001, T International Sym-posium on High Performance ElectronDevices for Microwave and Optoelelectron-ic Applications Location: Technical University ofVienna, Vienna, Austria Contact: Horst Zimmer-mann, Technical University of Austria,Gusshausstrasse 25/354 Inst. for Elec. Meas. &Circuit Design, Vienna, Austria A-1040 Tel: +43 158801 354 30 Fax: +43 1 58801 354 99 E-Mail: [email protected] Deadline:9/10/01 www: http://www.edmo-symposium.org

November 28 - December 1, 2001, * IEEESemiconductor Interface Specialists Con-ference Location: The Westin Grand Hotel,Washington, DC, USA Contact: Lori Lipkin, 4600Silicon Drive, Durham, NC, USA 27703 Tel: +1919 313 5525 Fax: +1 919 313 5696 E-Mail:[email protected] Deadline: 8/6/01 www:http//www.ieeesisc.com

December 2 - 5, 2001, * IEEE InternationalElectron Devices Meeting Location: Washing-ton Hilton & Towers, Washington, D.C., USA Con-tact: Phyllis Mahoney, Widerkehr & Associates,101 Lakeforest Blvd., Suite 400 B, Gaithersburg,MD, USA 20877 Tel: +1 301 527 0900 ext. 103

Fax: +1 301 527 0994 E-Mail: [email protected] Deadline: 6/25/01 www: http://www.ieee.org/conference/iedm

December 5 - 7, 2001, T International Semi-conductor Device Research SymposiumLocation: Holiday Inn Georgetown, Washington,DC, USA Contact: Agis Iliadis, Electrical & Com-puter Engineering Department, University of Mary-land, College Park, MD, USA 20742 Tel: +1 301405 3651 Fax: +1 301 314 9281 E-Mail:[email protected] Deadline: 7/27/01 www:http://www.ece.umd.edu/ISDRS_2001

December 11 - 15, 2001, T InternationalWorkshop on the Physics of SemiconductorDevices Location: Solid State Physics Laboratory,Delhi, India Contact: P.K. Basu, Solid State PhysicsLaboratory, Luchnow Road, Timarpur, Delhi, India110 054 Tel: +91 11 3960773/3953198 Fax:+91 11 3913609/3984285 E-Mail: p_k_basu/[email protected], [email protected] Deadline:5/15/01 www: http://www.iwpsd.com

January 6 - 11, 2002, T Advanced Workshopon ‘Frontiers in Electronics’ Location: ColonyCove, St. Croix, US Virgin Islands Contact: SergeLuryi, State University of New York at Stony Brook,NY State Center for Advanced Tech. In Sensor Sys-tems, Stony Brook, NY, USA 11794-2350 Tel: +1631 632 8420 Fax: +1 632 632 8494 E-Mail:[email protected] Deadline: 10/31/01www: http://nina.ecse.rpi.edu/shur/wofe2002/index.htm

February 2002, T Conference on High-Tem-perature Electronic Materials, Devices andSensors Location: Contact: Barbara Hickernell,United Engineering Foundation, Three Park Ave.,27th Floor, New York, NY, USA 10016-5902 Tel:+1 212 591 7836 Fax: +1 212 591 7441 E-Mail:[email protected] Deadline: Not Available www:Not Available

* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ‘Sponsorship/Co-Sponsorship’ and ‘Technical Co-Sponsorship’T = Technical Co-Sponsorship Support # = Cooperation Support

wan, April 18–20. This year the confer-ence attracted more than 110 excellentcontributed papers from all over theworld, representing original works on thelatest advances in the area of VLSI technol-ogy, circuits, and applications. Sixty-sixpapers were accepted to form 12 ses-sions. Fifteen world experts were invited topresent reviews on the state of the art of

their corresponding area of expertise.More than 600 participants coming from16 countries attended the symposium.There were three keynote speeches by dis-tinguished speakers from the US, Europe,and Japan. Gene Frantz, Senior Fellow ofTI, gave the opening speech entitled “Sys-tems on a Chip from a System’s Perspec-tive.” He was followed by H. Huomo, V.P.of Nokia, talking about “Future is in Wire-less,” and T. Takemoto, V.P. of STARCprogram, Japan, on “Joint Activity forSemiconductor R&D and Role of Semicon-

ductor Technology Academic ResearchCenter (STARC).” The conference is spon-sored by the Industrial TechnologyResearch Institute of Taiwan. Technicalsponsors include Chinese Institute of Engi-neers, Taiwan Semiconductor IndustryAssociation, IEEE Electron Devices Soci-ety, IEEE Solid-State Circuits Society, IEEECircuits and Systems Society, IEEE TaipeiSection, and IEEE Electron Devices SocietyTaipei Chapter. For more details, pleasevisit http://www.edsTaipei.edu.tw.

—Tahui Wang, Editor

Regional & Chapter News(continued from page 21)

EDSEDITOR-IN-CHIEF

Krishna Shenai EECS Department (M/C 154), 1135 SEO The Univ. of Illinois at Chicago Tel: +1 312 996 2633851 South Morgan Street Fax: +1 312 996 0763Chicago, IL 60607-7053 E-Mail: [email protected]

REGIONS 1-6, 7 & 9Eastern and Northeastern USA(Regions 1 & 2)M. Ayman ShibibAgere SystemsBell Laboratories2525 N. 12th StreetP.O. Box 13396Reading, PA 19612Tel: +1 610 939 6576Fax: +1 610 939 3769E-Mail: [email protected]

Southeastern and SouthwesternUSA (Regions 3 & 5)Charles B. Yarling201 W. Stassney, #506Austin, TX 78745-3144Tel: +1 512 306 1493Fax: +1 512 306 0384E-Mail: [email protected]

Central USA & Canada (Regions 4 & 7)Arokia NathanDALSA/NSERC Industrial Research ChairElectrical & Computer EngineeringUniversity of WaterlooWaterloo, Ontario N2L 3GICanadaTel: +1 519 888 4803Fax: +1 519 746 6321E-Mail: [email protected]

Western USA (Region 6)Stephen A. ParkeBoise State University1910 University Dr.Boise, ID 83725USATel: +1 208 426 3842Fax: +1 208 426 4800E-Mail: [email protected]

Latin America (Region 9)Adelmo Ortiz-CondeUniversidad Simon BolivarApdo. 89000Caracas 1080-AVenezuelaTel: +582 906 4010Fax: +582 906 4025E-Mail: [email protected]

REGION 8Eastern Europe & The Former Soviet UnionNinoslav D. StojadinovicFaculty of Electronic EngineeringUniversity of NisBeogradska 14, 18000 NisYugoslaviaTel: +381 18 529 326Fax: +381 18 46 180E-Mail: [email protected]

Scandinavia & Central EuropeMikael L. OstlingRoyal Institute of TechnologyDepartment of Electronics, FTEP.O. Box Electrum 229Royal Institute of TechnologyS-164 40 KistaSwedenTel: +46 8 752 1402Fax: +46 8 752 7850E-Mail: [email protected]

UK, Middle East & AfricaGady GolanCenter for Technical Education and The Open UniversityPO Box 3932816 Klauzner St.Tel Aviv 61392, IsraelTel: +972 3 646 0329Fax: +972 3 646 5465E-Mail: [email protected]

Western EuropeChristian ZardiniLaboratoire IXLUniversite Bordeaux I351 Cours de la Liberation33405 TalenceFranceTel: +33 5 56 84 65 46Fax: +33 5 56 37 15 45E-Mail: [email protected]

REGION 10Australia, New Zealand & South AsiaWee Kiong Choi Dept. of Electrical EngineeringNational University of Singapore10 Kent Ridge CrescentSingapore 119260Tel: +65 874 6473Fax: +65 779 1103E-Mail: [email protected]

Northeast AsiaHisayo Sasaki MomoseMicroelectronics Engineering LaboratoryToshiba Corporation8, Shin-Sugita-cho, Isogo-kuYokohama, 235-8522 JapanTel: +81 45 770 3628Fax: +81 45 770 3575E-Mail: [email protected]

East AsiaTahui WangNational Chiao-Tung UniversityInstitute of Electronics1001 TA Hsueh Rd.Hsin-Chu 30049 TaiwanTel: +886 3 5712121, ext. 54143Fax: +886 3 5724361E-Mail: [email protected]

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