dr. milan rosina principal analyst, power electronics ... · foundry investment on mocvd for power...

GaN and SiC power device: market overview

Dr. Milan ROSINA

Principal Analyst, Power Electronics & BatteriesYole Développement

2

TABLE OF CONTENT

• Power electronics market

• SiC• Power market

• Remaining challenges

• GaN• Power market

• Remaining challenges

• Conclusions

SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018

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Power Electronics market

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4

DRIVING POWER ELECTRONICS

• Efficient

• Cost

• Reliability

• Integration

• Manufacturing

• Supply chain

Needs

2018


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5

POWER DEVICE MARKET

Looking forward: 2017-2023 by type of device

Modules and IPM market is expected to reach $5.5B by 2023

SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018 *Module: IGBT, MOSFET and Bipolar devices that are sold as modules, not including rectifiers in that category

CAGR17-23: 3.9%

Modules & IPM: 7.6%

IGBT: 5.5%

X-FET: 2.9%

Bipolar: 2.0%

Thyristors: 1.0%

Rectifiers: 1.8%

CAGR 2017-2023

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6

VOLTAGE LEVEL

Low voltage applications keep being the biggest market.

Market share

Total market: $ 15.4B


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POWER VS FREQUENCY ON ELECTRONICS

Silicon Power device technology positioning (2018)Sw

itch

ing

pow

er

(W)

GaN HEMT

Planar

103

Thyr

isto

r

Si Bipolar

Operating frequency (Hz)

104 106105

AC adapters

103

102

101

100

Power

supplies for

servers

EV/HEV

Switching

power supplies

Audio

equipment

UPSRail

MOSFET

GridWind

PV

IGBT/IPM

Home

appliances


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8

WIDE BAND GAP MATERIAL

Why WBG?

GaN is interesting for high-frequency switching and SiC for high temperature applications

1 The Tc for GaN is given here for typical GaN-on-Si. It has been demonstrated that the Tc of bulk GaN could reach four W/cm.°C2 The electrical field profile can also be controlled by the doping concentration

High T°

applications

High-frequency

switching

High-voltage

operation

1

2

7

3x higher bandgap of Si 10x

higher breakdown field

3x thermal conductivity of Si

Up to 1000x

lower Rdson

2x switching

speed

Size reduction: 1/10x

drift region for same

Vbd

Reduction of conduction

and switching loss

High temperature

operation

Low Rdson

Very fast switching

High frequency

operation

Compactness and

weight reduction

Reduction of conduction

and switching loss

3x higher bandgap of Si 14x

higher breakdown field

GaN SiC

Co(tr) of GaN device is ~10x

lower than SJ FET

Qrr >100x lower for

GaN devices


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MOSFET

POWER VS FREQUENCY ON ELECTRONICS

Power device technology positioning (2018)Sw

itch

ing

pow

er

(W)

GaN HEMT

Planar

103

Thyr

isto

r

Si Bipolar

Operating frequency (Hz)

104 106105

AC adapters

103

102

101

100

Power

supplies for

servers

EV/HEV

Switching

power supplies

Audio

equipment

UPSRailGridWind

PV

IGBT/IPM

Home

appliances

GaN

SiC

MOSFET


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10

KEY PLAYERS AND POWER ELECTRONICS LANDSCAPE

Main power electronics players involved in power WBG

IGBT SJ MOSFET SiC GaN

Extracted from the

report “Status of

Power Electronics

Industry 2018” from

Yole Développement

Power Electronics discrete and module revenues, 2017D

iodes

and/o

r Tra

nsi

stor


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SiC power market

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SiC POWER DEVICE TARGET APPLICATIONS OVERVIEW

SiC


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Total

SiC POWER DEVICE MARKET REVENUE

Split by application

The total SiC-based power device market is expected to grow steadily, reaching more than $1.5B in 2023.

Including discrete diodes, discrete transistors, diode bare die in hybrid modules and full SiC modules.

EV/HEV: 76%

PFC: 10%

Rail: 105%

Charging infrastructure: 101%

Motor drives: 39%

PV: 11%

CAGR 2017-2023


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14

OUTLOOK OVER 2022

Gradually towards a module dominating market

The transistors portion isincreasingand the module market willbecomemore and more important.


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15

SIC POWER INDUSTRY - MAIN REMAINING CHALLENGES

From materials to system integration

Material

• High cost

• High defect density

• Limited wafer size

• Shortage

Device

• Low manufacturing yield

• High cost

• Multi-sourcing (no longer an issue for diode, but still for transistors as of 2017)

• Long-term reliability

• What is the right packaging?

System

• How to integrate the active component (driving, EMI, topology choices, etc.)?

• What are the available choices for passive components and dielectric materials?


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Material

• High cost



• Shortage

Device


• High cost

• Multi-sourcing


• Packaging

System




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Material

• High cost



• Shortage

Device


• High cost

• Multi-sourcing


• Packaging

System




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GaN power market

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19

GaN INDUSTRY - DEVELOPMENT TIMELINE

20162015

Infineon acquires IR Agree on partnership

Announce collaboration

Volume production

Company’s

first GaN

product

GaN IC

GaN IC

Joint development

600V power stage80V power stage


2017

Investment


Mass production of

650 V GaN

First devices

in 8” wafersHalf bridge

power IC

4x fab increase for

Lidar Sensors

Fast charging

GaN IC

Foundry investment on

MOCVD for Power GaN

DC/DC+POL solution

for data centers

Automotive

qualification

GaN on their

power

conversion

module

2018

Volume production


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20

GAN POWER DEVICE TARGET APPLICATIONS OVERVIEW

GaN


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GaN FOR POWER ELECTRONICS APPLICATION

Market (M$)

Time

Bull case scenario

2018

Fast

charger

2023

Wireless

charging

EV/HEV

Data centres

400

100

++

+++

LiDAR

+++

Base scenario 1

2

300

200

500


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GaN POWER INDUSTRY - MAIN REMAINING CHALLENGES


Epi

• High cost


• Relatively low yield

Device

• High cost

• Multi-sourcing

• E-mode vs D-mode


System




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Epi

• High cost



Device

• High cost

• Multi-sourcing



System




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Epi

• High cost



Device

• High cost

• Multi-sourcing



System




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Conclusion

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26

CONCLUSION: HOW TO ACCELERATE WBG ADOPTION

Accelerator LimiterScientistDream

Optimistic

Performances are better

Obviously the next

generation

Designer Challenge

Realistic

How do use the device

How to design?

How long to develop

Whychanging?


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27

CONCLUSION

SiC and GaN future…

• In general, the power electronics market will be driven by module and IGBT growth over the next 5 years. Many standard power applications are being upgraded to enable higher efficiencies or reduced size systems, leaving an open door to SiC and GaN penetration.

• New applications are also coming up. WBG could penetrate to those markets.

• The SiC power device market outlook is without doubt promising as market adoption is ongoing. One of the main driving application is EV/HEV. Shortage, cost and multi-sourcing need also to be taken into account for forecasts.

• GaN is still a path away from SiC, less mature so at the moment being less adopted. Need high value addition to the end system to include it in the end product. Reliability seems to be still a barrier for high power systems.

• SiC and GaN will grow in shares in the power electronics devices in the future. Each one in a different speed and entering in different applications. However, they will always a co-exist with Silicon devices.


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Biography & contact

CONTACT

Dr Milan ROSINA

Dr. Milan Rosina is a Principal Analyst for Energy Conversion & Emerging Materials at Yole Développement. Before joining Yole, he worked as a Research Scientist and a Project Manager in the fields of photovoltaics, microelectronics, and LED. Dr. Rosina has more than 15 years of scientific and industrial experience with prominent research institutions, an equipment maker, and a utility company. His expertise includes new equipment and process development, due diligence, technology, and market surveys in the fields of renewable energies, energy storage, batteries, power electronics, thermal management, and innovative materials and devices.

E-mail: [email protected]

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Sciences &

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6 COMPANIES TO SERVE YOUR BUSINESS

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Teardown and reverse engineering

Cost simulation tools

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Market, technology and strategy

consulting

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Patent assessment

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dr. milan rosina principal analyst, power electronics ... · foundry investment on mocvd for power...

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