![Page 1: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/1.jpg)
UFJF – FABRICIO CAMPOS
![Page 2: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/2.jpg)
UFJF – FABRICIO CAMPOS
NAND 74AS00
AD TLC3548 SRAM CY7C199 (32Kx8 SRAM)
DSP TMS320F243
![Page 3: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/3.jpg)
UFJF – FABRICIO CAMPOS
AD TLC3548
• Successive-approximation,• CMOS, • 14-bit, • Vdd=5V, • 200KSPS, • 8-Channel Unipolar ADC, • Built-In 4-V Reference, • SPI - Serial Peripheral Interface Bus
![Page 4: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/4.jpg)
UFJF – FABRICIO CAMPOS
AD TLC3548
![Page 5: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/5.jpg)
UFJF – FABRICIO CAMPOS
DSP TMS320F243
• 20 Mhz
• 16-bit fixed-point DSP, CMOS Technology
• Memory
• 544 Words x 16 Bits of On-Chip Data/Program DRAM (DRAM)
• 8K Words x 16 Bits of EEPROM
• AD 10-Bit Analog-to-Digital Converter, 8 channels, ADC Conversion Time 900ns
![Page 6: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/6.jpg)
UFJF – FABRICIO CAMPOS
SRAM CY7C199 (32Kx8 SRAM)
• 32K x 8 Static RAM
• High speed - 10 n
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• Three-state drivers.
Como o DSP é de 16bits, associa-se 2 memórias para formar 32K x 16
![Page 7: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/7.jpg)
UFJF – FABRICIO CAMPOS
SRAM CY7C199
![Page 8: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/8.jpg)
UFJF – FABRICIO CAMPOS
Capítulo 12) Dispositivos de MemóriaTerminologia / Velocidade / PreçoTipos de memória / Leitura / EscritaCapacidadeProcedimentos de Leitura e EscritaROM / FLASH / RAM / SRAM / DRAM
![Page 9: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/9.jpg)
UFJF – FABRICIO CAMPOS
12.1) TerminologiaCélula de memória: Dispositivo usado para armazenar um único bitPalavra de memória: Grupo de BitsByte = 8 bitsCapacidade: Quantos bits podem ser armazenados 4K x 20 = 4096x20 bitsEndereço: Número que identifica uma posição de uma palavra na memória
![Page 10: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/10.jpg)
UFJF – FABRICIO CAMPOS
12.1) TerminologiaOperação Leitura / Escrita
Tempo de Acesso: tACC tempo de Leitura
Memória Volátil: Se a alimentação for removida a informação é perdida
Memória de Acesso Sequencial (SEQUENTIAL-ACCESS-MEMORY - SAM) O tempo de acesso não é constante
Memória de Acesso Aleatório (RANDON-ACCESS-MEMORY -RAM): O tempo de acesso é o mesmo para qualquer endereço
Memória de Leitura e Escrita (READ/WRITE MEMORY - RWM)
Memória Apenas de Leitura (READ-ONLY-MEMORY - ROM)
![Page 11: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/11.jpg)
UFJF – FABRICIO CAMPOS
12.1) TerminologiaDispositivo de memória Estática: Os dados permanecem enquanto a fonte estiver aplicada
Dispositivo de memória Dinâmica: Os dados precisam ser periodicamente reescritos (REFRESH)
Memória Principal: Instruções e Dados
Memória Auxiliar: Armazenamento
![Page 12: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/12.jpg)
UFJF – FABRICIO CAMPOS
12.2) Princípios de OperaçãoEntradas de EndereçoBarramentos de dadosEntrada de controle R/~WHabilitação
![Page 13: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/13.jpg)
UFJF – FABRICIO CAMPOS
12.2) Princípios de OperaçãoEscrita e Leitura
![Page 14: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/14.jpg)
UFJF – FABRICIO CAMPOS
12.3) Conexões CPU-MEMÓRIABarramentos: Endereço
DadosControle
Operações: EscritaLeitura
![Page 15: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/15.jpg)
UFJF – FABRICIO CAMPOS
12.4) Memória Apenas Leitura - ROM24=16 endereçosPalavras de 8 bits
![Page 16: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/16.jpg)
UFJF – FABRICIO CAMPOS
12.5) Arquitetura Interna da ROM
Matriz de RegistradoresDecodificador de LinhasDecodificador de ColunasBuffer de Saída
![Page 17: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/17.jpg)
UFJF – FABRICIO CAMPOS
12.6) Temporização da ROMtACC – Tempo de acessotOE – Tempo de habilitação de saída
![Page 18: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/18.jpg)
UFJF – FABRICIO CAMPOS
12.7) Tipos de ROM
MROM – ROM Programada por máscaraPROM – ROM ProgramávelEPROM – Erasable Programable ROMEEPROM – Electrically Erasable Programable ROMCD-ROM – Compact Disk ROM
![Page 19: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/19.jpg)
UFJF – FABRICIO CAMPOS
12.7) Tipos de ROM
MROM – ROM Programada por máscaraTem a informação armazenada ao mesmo tempo que o circuito é fabricado
![Page 20: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/20.jpg)
UFJF – FABRICIO CAMPOS
12.7) Tipos de ROMMROM – ROM Programada por máscara
![Page 21: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/21.jpg)
UFJF – FABRICIO CAMPOS
12.7) Tipos de ROM
PROM – ROM ProgramávelPode ser programada um única vez com conexões a fusívelOTP – One Time Programmable
![Page 22: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/22.jpg)
UFJF – FABRICIO CAMPOS
12.7) Tipos de ROMEPROM – Erasable Programable ROMÉ não volátilPode ser programada pelo usuário e também pode ser apagadaAs células são constituídas de transistores MOS e programadas com tensões elevadasAs células são apagadas expondo-se o silício à luz ultravioleta de alta intensidade por vários minutos
![Page 23: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state](https://reader033.vdocuments.site/reader033/viewer/2022060400/5f0de00a7e708231d43c83de/html5/thumbnails/23.jpg)
UFJF – FABRICIO CAMPOS
12.7) Tipos de ROMEPROM – Erasable Programable ROM