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Thermal Management Optimizationof a 5 MW Power Electronic Converter
Hugo Reynes, Jose Maneiro, Cyril Buttay, Piotr Dworakowski
02/01/2017
TITRE DE LA PRÉSENTATION - INTERVENANT - 1
iMaps – ATW on Micropackaging and Thermal Management
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Outline
02/02/2017Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student 2
DC Distribution in Offshore Windfarms
Converter
Thermal behavior of SiC MOSFETs
Economic Analysis
Conclusions
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DC Distribution in Offshore Windfarms
Windfarm diagram with AC collector
Windfarm diagram with DC collector
Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student 3
Dolwin wind farm and HVDC converter
(800 MW). Document ABB
DC Solutions for offshore wind connections.
Document ABB
02/02/2017
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DC Distribution in Offshore Windfarms
DC advantagesNo reactive power
Flexibility for interconnexion
2 conductors instead of 3
DC grid collector setup with power electronic convertersNo low frequency transformers
No AC Collector substation
4
Rectifier+ DC link
DC collector+ DC link
Windturbines+AC transformer
Windturbines+DC Converter
AC Collectorplatform
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Converter
DiagramIPOS (Input Parallel, Output Series)
6 Medium frequency transformers
Overview12 inverters (60cmx60cmx20cm)
6 power modules per inverter (72 total)
Water Cooling
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Converter
Power Module
6
• Enclosure / case• Terminals• Encapsulant• Wire bonding• Die (SiC MOSFET)• Metallized substrate• Baseplate• Solder Layers
1 switch = 1 or more dies in parallel
Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student
Infineon XHP3 Package
02/02/2017
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Converter
Power Module
7
• Enclosure / case• Terminals• Encapsulant• Wire bonding• Die• Metallized substrate• Baseplate• Solder Layers
Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student
Infineon XHP3 Package
02/02/2017
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Converter
Power Module
8
• Enclosure / case• Terminals• Encapsulant• Wire bonding• Die• Metallized substrate• Baseplate• Solder Layers
Part Function Material Thickness (mm) Thermal Conductivity (W/m.K)
Die Electronic Switch 4H-SiC 0.4 270
MetallizedSubstrate
Interconnexion / Isolation / Heat path
CopperCeramic (AlN)
Copper
0.30.635~1
0.3
400150400
Baseplate Mechanical support / Heatpath
AlSiC 4 200
Solder Layers Substrate AttachDie attach (classical)Die attach (advanced
assembly)
Solder AlloySolder AlloyAg Sintered
0.10.050.05
3535
200
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Converter
Die Rth junction to case (isothermal backside)
9
Ideal Case Worst Case Realistic Case
• « Unlimited » heat spreading• Optimized assembly,
thinnest layers possible
• No heat spreading(dies touching each other)
• Typical layer thicknesses
• Reasonable distances between dies
• Typical layer thicknesses
Rth=0.13 °C/W Rth=0.88 °C/W Rth=0.42 °C/W
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Converter
Isothermal BacksideSimulation with actual geometry
𝑹𝒕𝒉,𝒋−𝒄 = 𝟎. 𝟒𝟐 °𝑪/𝑾
𝑹𝒕𝒉 =𝑻𝒋,𝒎𝒂𝒙 − 𝑻𝑪
𝑷
Heat Transfer CoefficientCloser to actual cooling system behavior
Simulation with actual geometry
CFD Calculations from the LCP Supplier𝑹𝒕𝒉,𝒋−𝒂𝒎𝒃 = 𝟎. 𝟔𝟑 °𝑪/𝑾
𝑹𝒕𝒉,𝒋−𝑨 =𝑻𝒋 − 𝑻𝑨
𝑷
Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student 10
TC = 70 °CTj = 100 °CP = 72 W
Die Rth junction to ambient
02/02/2017
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Converter
11
Die Rth, junction to ambient
Temperature distribution:
0
50
100
150
200
250
1000 10000 100000 1000000
Die
Te
mp
era
ture
(°C
)
Heat Transfer Coefficient (W/m².°C)
T2.1 T2.2 T2.3 T2.4 T2.5 T2.6
Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student 02/02/2017
h=10 000 W/m².°CTA = 50 °CTj =100 °CP = 72 W
Rth,j-amb = 0.69 °C/W
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Thermal behavior of SiC MOSFETs
Thermal modelisation: SiC MOSFETHypothesis:
The main contribution to the On-resistance is the drift region
The switching losses are not considered in this model
The theoretical model is close to the datasheet Ron(Tj) characteristic(coefficient of determination R²=0,995)
12
𝑅𝐷𝑅𝐼𝐹𝑇,𝑠𝑝 𝑇𝑗 =𝑊𝐷
𝑞 × 𝑁𝐷 × µ𝑛 𝑇𝑗
µ𝑛 𝑇𝑗 = 1140𝑇𝑗
300
−𝛼
𝑅𝑜𝑛 𝑇𝑗 = 𝑅𝑜𝑛,300𝐾 ×𝑇𝑗
300
𝛼
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Thermal behavior of SiC MOSFETs
Thermal runaway:
Power dissipated by the SiC MOSFET
𝑃𝑜𝑛 𝑇𝑗 = 𝑅𝑜𝑛 𝑇𝑗 × 𝐼²
= 𝑅𝑜𝑛,300𝐾 ×𝑇𝑗
300
𝛼× 𝐼²
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Thermal behavior of SiC MOSFETs
Thermal runaway:
Power dissipated by the SiC MOSFET
𝑃𝑜𝑛 𝑇𝑗 = 𝑅𝑜𝑛 𝑇𝑗 × 𝐼²
= 𝑅𝑜𝑛,300𝐾 ×𝑇𝑗
300
𝛼× 𝐼²
Heat flow through the cooling system
𝑃𝑡ℎ 𝑇𝑗 =𝑇𝑗−𝑇𝐴
𝑅𝑡ℎ
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Thermal behavior of SiC MOSFETs
Thermal runaway:
Power dissipated by the SiC MOSFET
𝑃𝑜𝑛 𝑇𝑗 = 𝑅𝑜𝑛 𝑇𝑗 × 𝐼²
= 𝑅𝑜𝑛,300𝐾 ×𝑇𝑗
300
𝛼× 𝐼²
Heat flow through the cooling system
𝑃𝑡ℎ 𝑇𝑗 =𝑇𝑗−𝑇𝐴
𝑅𝑡ℎ
Steady-state conditions:
𝛿𝑈 𝑇𝑗 = 𝑃𝑜𝑛 𝑇𝑗 − 𝑃𝑡ℎ 𝑇𝑗 = 0
15
𝜹𝑼 = 𝟎 → 𝑺𝒕𝒂𝒃𝒍𝒆 𝒔𝒕𝒆𝒂𝒅𝒚 − 𝒔𝒕𝒂𝒕𝒆𝜹𝑼 > 𝟎 → 𝑫𝒆𝒗𝒊𝒄𝒆 𝑯𝒆𝒂𝒕𝒊𝒏𝒈𝜹𝑼 < 𝟎 → 𝑫𝒆𝒗𝒊𝒄𝒆 𝑪𝒐𝒐𝒍𝒊𝒏𝒈
Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student 02/02/2017
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Thermal behavior of SiC MOSFETs
Thermal runaway:
16
Stable Unstable Stable to Unstablewith ambient temperature
increasing
𝜹𝑼 = 𝟎 → 𝑺𝒕𝒂𝒃𝒍𝒆 𝒔𝒕𝒆𝒂𝒅𝒚 − 𝒔𝒕𝒂𝒕𝒆𝜹𝑼 > 𝟎 → 𝑫𝒆𝒗𝒊𝒄𝒆 𝑯𝒆𝒂𝒕𝒊𝒏𝒈𝜹𝑼 < 𝟎 → 𝑫𝒆𝒗𝒊𝒄𝒆 𝑪𝒐𝒐𝒍𝒊𝒏𝒈
Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student 02/02/2017
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Thermal behavior of SiC MOSFETsParalleling of the MOSFETs
Required to increase the current rating of the module
𝑅𝑜𝑛,𝑀𝑜𝑑𝑢𝑙𝑒 =𝑅𝑜𝑛,𝑑𝑖𝑒
𝑁𝑑𝑖𝑒𝑠
Thermal balancing Positive heat coefficient
• 𝑉 = 𝑉𝑎 = 𝑉𝑏 = 𝑉𝑐 = 𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡
• 𝐼 = 𝐼𝑎 + 𝐼𝑏 + 𝐼𝑐 = 𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡
𝐼𝑓 𝑅𝑎 ↑ 𝑡ℎ𝑒𝑛 𝐼𝑎 ↓𝐼𝑓 𝐼𝑎 ↓ 𝑡ℎ𝑒𝑛 𝐼𝑏 ↑ 𝑎𝑛𝑑 𝐼𝑐 ↑
𝑻𝒋 ↑ ⟹ 𝑹𝒐𝒏 ↑ ⟹ 𝑰𝒅𝒊𝒆 ↓ ⟹ 𝑷𝒅𝒊𝒆 ↓ ⟹ 𝑻𝒋 ↓
17Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student
V Ra Rb Rc
I
Ia Ib Ic
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Thermal behavior of SiC MOSFETs
Paralleling the MOSFETs
Ideal case: Rth,die = 0,13 °C/W
18
Tj max
Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student
Tj Calculation for 2 dies ignoring the Ron (Tj) variations:
𝑅𝑜𝑛 = 40 𝑚Ω
𝐼𝑚𝑜𝑑𝑢𝑙𝑒 = 200 𝐴 ⟹ 𝐼𝑑𝑖𝑒 =200
2= 100 𝐴
𝑃𝑑𝑖𝑒 = 𝐼𝑑𝑖𝑒2 × 𝑅𝑜𝑛 =
200
2
2× 0.04 = 400 𝑊
∆𝑇 = 𝑃𝑑𝑖𝑒 × 𝑅𝑡ℎ = 52 °𝐶
𝑻𝒋 = 𝑻𝑨 + ∆𝑻 = 𝟗𝟐 °𝑪
Thermal Runaway
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Thermal behavior of SiC MOSFETs
Paralleling the MOSFETs
Realistic case: Rth,die = 0,69 °C/W
19
Tj max
Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student
Tj Calculation for 5 dies ignoring the Ron (Tj) variations:
𝑅𝑜𝑛 = 40 𝑚Ω
𝐼𝑚𝑜𝑑𝑢𝑙𝑒 = 200 𝐴 ⟹ 𝐼𝑑𝑖𝑒 =200
5= 40 𝐴
𝑃𝑑𝑖𝑒 = 𝐼𝑑𝑖𝑒2 × 𝑅𝑜𝑛 =
200
5
2× 0.04 = 64 𝑊
∆𝑇 = 𝑃𝑑𝑖𝑒 × 𝑅𝑡ℎ = 44 °𝐶
𝑻𝒋 = 𝑻𝑨 + ∆𝑻 = 𝟖𝟒 °𝑪
160 °C
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Thermal behavior of SiC MOSFETs
Paralleling the MOSFETs
Worst case: Rth,die = 0,88 °C/W
20
Tj max
Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student
Tj Calculation for 8 dies ignoring the Ron (Tj) variations:
𝑅𝑜𝑛 = 40 𝑚Ω
𝐼𝑚𝑜𝑑𝑢𝑙𝑒 = 200 𝐴 ⟹ 𝐼𝑑𝑖𝑒 =200
8= 25 𝐴
𝑃𝑑𝑖𝑒 = 𝐼𝑑𝑖𝑒2 × 𝑅𝑜𝑛 =
200
8
2× 0.04 = 25 𝑊
∆𝑇 = 𝑃𝑑𝑖𝑒 × 𝑅𝑡ℎ = 22 °𝐶
𝑻𝒋 = 𝑻𝑨 + ∆𝑻 = 𝟔𝟐 °𝑪
125 °C
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Economic AnalysisParameters
3300V 40mΩ die, engineering sample 330$ per unit (Source: PowerAmerica)
3300V 40mΩ die, volume production 140$ per unit (Source: CREE commercial roadmap)
Wind electricity price 13 c€/kWh for the 1st 10 years 3 c€/kWh after
Trade-off: More dies in parallel: Lower losses, more electricity produced but higher
invesment Fewer dies in parallel: More losses but lower invesment
Increasing the cooling performances is equivalent to increase die count
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Economic Analysis
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Rth =0.5 °C/W
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Conclusions
SiC Dies can operate at high (>150°C) junction temperature but <100°C is preferable for better efficiency
Actual number of dies to be used is a trade-off between numberof dies and energy savings
Better cooling allows for fewer dies to be used. We’re interested in more efficient cooling techniques!
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Acknowledgement
This work was supported by a grant overseen by the French National Research Agency (ANR) as part of the “Investissementsd’Avenir” Program (ANE-ITE-002-01)
SuperGrid Institute
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Thank you for your attention
Q&A
http://www.supergrid-institute.com/
25Thermal Management Optimization of a 5 MW Power Electronic Converter – Hugo REYNES – Ph.D Student 02/02/2017