Download - The MIDAS Personal Active Dosimeter
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• Device concept and design
• Silicon pixel sensor
• Simulation and Measurement results
MIDAS is developed under CONTRACT: 4000119598/17/NL/LF “Highly miniaturized ASIC Radiation Monitor”
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Contents
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The device concept (I)
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The device concept (I)
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The device concept (I)
Si Pm
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The device concept (I)
Si Pm
Ti cover
box
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The device concept (I)
Si Pm
Ti cover
box
2 layers
of Si
pixel
detectors
on every
face
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The device concept (II)
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The device concept (II)
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Monolithic Active Pixel Sensors
Monolithic active pixel sensors for charged
particles were applied in space well before
the hep community discovers them.
G.A. Soli, H.B. Garrett, E.R. Fossum,
“CMOS charged particle spectrometers”,
IEEE Trans. Nuclear Science, vol. 43(3)
pp. 1516-1520 (1996)
R Turchetta et al. “A monolithic active pixel sensor for charged
particle tracking and imaging using standard VLSI CMOS
technology”, Nucl. Instr. and Meth. A, 458 (2001)
Ivan Peric, “A novel monolithic pixelated particle detector
implemented in high-voltage CMOS technology”, Nucl.
Instr. and Meth. A, 582 (2007)
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Principle of operation illustrated
in the manufacturer technology chosen:
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High Voltage CMOS
p substrate e- h+
Negative
high voltage
charged particle
track
positive
voltage
in-pixel circuitry
Cdnwp
Cpsubdnw I. Mandic et al. Charge collection
properties of irradiated depleted
CMOS pixel test structures
arXiv:1801.03671v2 [physics.ins-det],
22 Jan 2018
Direct measurement of the depletion
depth for substrate with ρ=3 KΟhm ·cm
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The HVCMOS Si sensor
32 rows x 32 columns
105.5 um pixel pitch
Charge signal dynamic
range: Min:0.5fCb, Max:5
pCb (80db)
Pixel static power
consumption: <100 nA @
1.8V
Embedded A/D converter
(11 bits)
Only hit pixels are readout
Information output: Hit flag
and from pixels hit: Serially,
10 bits address, 22 bits
charge signal
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Vdd
Pixel_out
Parasitic
Cap 1 = 0.5pF
Vreset
“Error amplifier”
Comparator
D
- 28 V
Lateral overflow
Cap 2 = 4.5pF
Vdd
clk Q
DICE
Flip Flop
“monostable”
Lateral
overflow
switch
Vreset Vreset
Hit_flag=0
Pixel operation explained
PIXEL WAITING FOR A HIT
Leakage current
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Vdd
Pixel_out
Parasitic
Cap 1 = 0.5pF
Vreset
“Error amplifier”
Comparator
D
- 28 V
Lateral overflow
Cap 2 = 4.5pF
Vdd
clk Q
DICE
Flip Flop
“monostable”
Lateral
overflow
switch
Vreset Vreset
Hit_flag=1
Pixel operation explained
PIXEL HIT
Signal + leakage current
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Vdd
Pixel_out
Parasitic
Cap = 0.5pF
Vreset
“Error amplifier”
Comparator
D
- 28 V
Lateral overflow
Cap = 4.5pF
Vdd
clk Q
DICE
Flip Flop
“monostable”
Lateral
overflow
switch
Vreset Vreset
Hit_flag=1
Pixel operation explained
PIXEL 1st READ
Leakage current
V@ Cap 1
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Vdd
Pixel_out
Parasitic
Cap = 0.5pF
Vreset
“Error amplifier”
Comparator
D
- 28 V
Lateral overflow
Cap = 4.5pF
Vdd
clk Q
DICE
Flip Flop
“monostable”
Lateral
overflow
switch
Vreset Vreset
Hit_flag=1
Pixel operation explained
PIXEL 2nd READ
Leakage current
V@ (Cap 1 + Cap 2)
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Vdd
Pixel_out
Parasitic
Cap 1 = 0.5pF
Vreset
“Error amplifier” +
Comparator
D
- 28 V
Lateral overflow
Cap 2 = 4.5pF
Vdd
clk Q
DICE
Flip Flop
“monostable”
Lateral
overflow
switch
Vreset Vreset
Hit_flag=0
Pixel operation explained
PIXEL RESET
Leakage current
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1st prototype
The silicon photomultiplier
readout electronics
Ti shield of the
plastic scintillator
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Measurements with n/γ
(very preliminary) Cf252
16.5 MeV
Neutron beam
Na22
Cs137
Co60
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• Analysis of first neutron beam measurements
• Measurement at CERF facility @ CERN
• Preparation for the silicon sensor tests
• Continue simulations
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What is next: