![Page 1: SKiN: Double side sintering technology for new packages · 2013-06-02 · 06.02.2013 1 SKiN: Double side sintering technology for new packages Peter Beckedahl/Kevork Haddad](https://reader030.vdocuments.site/reader030/viewer/2022013020/5e720263e69fa76e5401669e/html5/thumbnails/1.jpg)
06.02.2013 1
SKiN: Double side sintering technology
for new packages
Peter Beckedahl/Kevork Haddad
![Page 2: SKiN: Double side sintering technology for new packages · 2013-06-02 · 06.02.2013 1 SKiN: Double side sintering technology for new packages Peter Beckedahl/Kevork Haddad](https://reader030.vdocuments.site/reader030/viewer/2022013020/5e720263e69fa76e5401669e/html5/thumbnails/2.jpg)
06.02.2013 2
SKiN: Double side sintering technology
Introduction
SKiN Assembly Process
Test Results
Summary
![Page 3: SKiN: Double side sintering technology for new packages · 2013-06-02 · 06.02.2013 1 SKiN: Double side sintering technology for new packages Peter Beckedahl/Kevork Haddad](https://reader030.vdocuments.site/reader030/viewer/2022013020/5e720263e69fa76e5401669e/html5/thumbnails/3.jpg)
06.02.2013 3
Market Drivers for Power Modules
Size, Reliability
Renewables Cost, Robustness,
Weight, Size
Vehicles Drives: Lower Cost
Power Supply: Efficiency
Elevator: Reliability
Industry
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06.02.2013 4
Challenges for Power Module Packaging
Higher operating temperatures
Better cooling
New materials
New Chip Technologies
Wide Bandgap Devices
RC IGBT
Next gen. IGBT
Reliability
Bond wires
Solder fatigue
Integration
Electronics inside
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06.02.2013 5
Replace Solder by Diffusion Sintering
Substrate with
gold flash surface
Ag layer
Chip
Pressure
Temperature
Ag layer before after sintering
Sinter layer
Substrate
Si-Chip
20 µm
Ag sinter layer between chip and substrate
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CONFIDENTIAL
Sinter Technology
properties
solder layer
SnAg(3)
Ag diffusion
sinter layer
melting temperature °C 221 962
thermal conductivity W/mK 70 240
electrical conductivity MS/m 8 41
layer thickness μm ~90 ~20
CTE ppm/K 28 19
tensile strength Mpa 30 55 @ 150 °C operating temperature
Creep area
Mechanical stable
Unable to bear
engineering loads
Adhesion test
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06.02.2013 7
SKiN device cross section
Sintering
Flexible Circuit BoardSMDL
og
icS
ide
Po
wer
Sid
e
DBC Substrate
Heatsink
Power Chip
Via
Sintering
Flexible Circuit BoardSMDL
og
icS
ide
Po
wer
Sid
e
DBC Substrate
Heatsink
Power Chip
Via
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06.02.2013 8
DBC, 5“ x 7“, plated
SKiN: Die sintering to substrate
Ag paste, stencil printed
IGBTs & FWDs, sintered
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AC / DC
Terminals
Flex board
w/ sinter paste
pin-fin cooler
w/ sinter paste
DC / AC terminals
Heat sink
top side
w/ Ag paste
coating
IGBT
FWD
Ag paste chip position
gate
sensor
frame
SKiN device
SKiN device assembly
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06.02.2013 10
Assembled SKiN device
AC terminal
auxiliary
terminals
IGBTs
FWD
DC terminals
AC terminal
auxiliary
terminals
IGBTs
FWD
DC terminals
SKiN Base Unit
sintered SKiN on
pin-fin cooler
fully insulated
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06.02.2013 11
1700V 1200V 650V
IGBT voltage 1700V 1200V 650V
DC link voltage 1300V 900V 450V
Current Rating 180A 200A 400A
ISO test voltage 5.6KV DC 4.2KV DC 3.5KV DC
IGBT 2 x 100mm2 2 x 100mm2 2 x 100mm2
Diode 1 x 120mm2 1 x 120mm2 1 x 120mm2
Heatsink 74 mm x 56 mm
74 mm x 56 mm
74 mm x 56 mm
~
+ -
SKiN ® Half Bridge Modules
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06.02.2013 12
SKiN Process Line
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06.02.2013 13
SKiN Development Status
Switching performance and inverter tests
Inverters test @ 300V, 300A (110 kVA)
Low stray inductance, no clamping,
no snubber
Measurement Setup
Turn-off waveform of the BOT IGBT at 400V
DC, 500 A. The peak voltage is 528 V
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06.02.2013 14
Electrical Test Results
3-Phase Inverter, 20 kW/dm³ Power Density
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06.02.2013 15
Thermal Test Results
DC
1
2
3
45
6x
x
x
x
x x
AC
Schematic overview
Chips are thermally decoupled
Homogenous temperature distribution
Rthja = 0.44 Kcm²/W (35% less than conv.)
IGBTs Diodes
Remove heat
flexible circuit board
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06.02.2013 16
Rth(j-a) Comparison (81mm² diode)
Pv(max) at
dT(j-a)=100K:
SEMiX
52% Heatsink:
0,65K/W
TIM:
0,2K/W
Chip + DCB
+Base plate:
0,4K/W
Rth(j-a)=1,25 K/W
80W (1 W/mm²)
16%
32%
SKiM
51%
Heatsink:
0,41K/W
25% TIM:
0,2K/W
24%
Chip + DCB:
0,19K/W
Rth(j-a)=0,8 K/W
125W (1,54W/mm²)
SKiN
Rth(j-a)=0,66 K/W
151W (1,87W/mm²)
73%
27%
Heatsink:
0,48K/W
Chip + DCB:
0,18K/W
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SKiN-Benchmark Design
06.02.2013 17
Benchmark samples have identical chips and dimensions
Only difference:
Chip Top side contact sintered to
flex foil
Contact area IGBT ~50%
Contact area Diode ~85%
Chip Top side contact with maximum
amount of 300µm bond wires
Contact area IGBT ~ 21%
Contact area Diode ~ 21%
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Thermal Resistance Measurement
06.02.2013 18
Thermal measurements 400A module samples
10l/min, 70°C coolant, 50% glycol
Excellent thermal resistance: Rth(j-a)= 0,177K/W @ 2cm2 chip area
225 W/cm2 chip area losses at 150°C junction and 70°C coolant
Measurement Setup
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Diode Surge Forward Current Measurement
06.02.2013 19
Half sine wave current surge of 10ms
duration at 25°C
IFSM rating of the flex layer module is
27% higher than the bond wire module
Improvement possible due to the larger
area top side contact and improved
thermal spreading
IFSM comparison
SKiN Module Benchmark Module
Sample A Sample A
Top 2666 Top 2092
Bot 2690 Bot 2108
Top 2691 Top 2105
Bot 2662 Bot 2096
Top 2696
Bot 2662
Top 2691
Bot 2656
min 2656 min 2092
max 2696 max 2108
mean 2677 mean 2100
Comparison 127% 100%
539
540
550
553
C641
C652
Destroyed chip with bonds
Destroyed chip with flex
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06.02.2013 20
Power Cycling Test System
4 x 400Amp SKiN devices in parallel
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06.02.2013 21
Power Cycling Results
Test under constant power:
700 kcycles @ DT=110K
70 x improvement
SKiN
SKiM
SEMITRANS
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06.02.2013 22
Conclusions
A Flexible Circuit Board replaces Bond Wires
Sintering replaces all Solder / Grease Layers
Direct Sintering to cooler: low thermal resistance
Significant chip shrink and/or higher current
Power Cycling capacity improves 70 x
SKiN technology is suited for 200 °C ambient
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Thank you