Download - Progettazione di circuiti e sistemi VLSI
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Interconnessioni e parassiti 1
Progettazione di circuiti e sistemi VLSIProgettazione di circuiti e sistemi VLSI
Anno Accademico 2010-2011
Lezione 9
29.4.2011
Interconnessioni e parassiti
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Interconnessioni e parassiti 2
Impact of Interconnect Parasitics
• Reduce Robustness
• Affect Performance• Increase delay• Increase power dissipation
Classes of Parasitics
• Capacitive
• Resistive
• Inductive
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Interconnessioni e parassiti 3
INTERCONNECT
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Interconnessioni e parassiti 4
Capacitive Cross Talk
X
YVX
CXY
CY
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Interconnessioni e parassiti 5
Capacitive Cross TalkDynamic Node
3 x 1 m overlap: 0.19 V disturbance
CY
CXY
VDD
PDN
CLK
CLK
In1
In2
In3
Y
X
2.5 V
0 V
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Interconnessioni e parassiti 6
Capacitive Cross TalkDriven Node
XY = RY(CXY+CY)
Keep time-constant smaller than rise time
0
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
010.80.6
t (nsec)
0.40.2
X
YVXRY
CXY
CY
tr↑
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Interconnessioni e parassiti 7
Dealing with Capacitive Cross Talk
• Avoid floating nodes• Protect sensitive nodes• Make rise and fall times as large as possible• Differential signaling• Do not run wires together for a long distance• Use shielding wires• Use shielding layers
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Interconnessioni e parassiti 8
Shielding
GND
GND
Shieldingwire
Substrate (GND )
Shieldinglayer
VDD
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Interconnessioni e parassiti 9
Cross Talk and Performance
Cc
- When neighboring lines switch in opposite direction of victim line, delay increases
DELAY DEPENDENT UPON ACTIVITY IN NEIGHBORING WIRES
Miller EffectMiller Effect
- Both terminals of capacitor are switched in opposite directions (0 Vdd, Vdd 0)
- Effective voltage is doubled and additional charge is needed (from Q=CV)
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Interconnessioni e parassiti 10
Structured Predictable Interconnect
S
S SV V S
G
S
SV
G
VS
S SV V S
G
S
SV
G
VExample: Dense Wire Fabric ([Sunil Kathri])Trade-off:• Cross-coupling capacitance 40x lower, 2% delay variation• Increase in area and overall capacitance Also: FPGAs, VPGAs
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Interconnessioni e parassiti 11
Encoding Data Avoids Worst-CaseConditions
Encoder
Decoder
Bus
In
Out
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Interconnessioni e parassiti 12
Driving Large Capacitances
V in Vout
CL
VDD
• Transistor Sizing• Cascaded Buffers
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Interconnessioni e parassiti 13
Using Cascaded Buffers
CL = 20 pF
In Out
1 2 N
0.25 m processCin = 2.5 fFtp0 = 30 ps
F = CL/Cin = 8000fopt = 3.6 N = 7tp = 0.76 ns
(See Chapter 5)
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Interconnessioni e parassiti 14
Optimal number of stages (lez. 5/35 ref.)
For a given load, CL and given input capacitance Cin
Find optimal sizing f
ff
fFtFNtt pN
pp lnln
ln1/ 0/1
0
0ln
1lnln2
0
f
ffFt
f
t pp
For = 0, f = e, N = lnF
f
FNCfCFC in
NinL ln
ln with
ff 1exp
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Interconnessioni e parassiti 15
Output Driver Design
Trade off Performance for Area and Energy
Given tpmax find N and f
• Area
• Energy
minminmin12
1
1
1
1...1 A
f
FA
f
fAfffA
NN
driver
22212
11
1...1 DD
LDDiDDi
Ndriver V
f
CVC
f
FVCfffE
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Interconnessioni e parassiti 16
Output Driver Design (2)
The optimal values of N and f, for minimal tp, can give too much area and transistors.
Increasing tpmax, the problem consists in the solution with minimal area and optimal energy dissipation
(see text paragraph 9.2.2)
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Interconnessioni e parassiti 17
Delay as a Function of F and N
101 3 5 7
Number of buffer stages N
9 11
10,000
1000
100
F = 100F = 1000
F = 10,000t p
/tp
0
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Interconnessioni e parassiti 18
How to Design Large Transistors
G(ate)
S(ource)
D(rain)
Multiple
Contacts
small transistors in parallel
Reduces diffusion capacitanceReduces gate resistance
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Interconnessioni e parassiti 19
Bonding Pad DesignBonding Pad
Out
InVDD GND
100 m
GND
Out
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Interconnessioni e parassiti 20
ESD Protection
• When a chip is connected to a board, there is unknown (potentially large) static voltage difference
• Equalizing potentials requires (large) charge flow through the pads
• Diodes sink this charge into the substrate – need guard rings to pick it up.
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Interconnessioni e parassiti 21
ESD Protection
Diode
PAD
VDD
R D1
D2
X
C
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Interconnessioni e parassiti 22
Chip Packaging
ChipL
L ´
Bonding wire
Mountingcavity
Leadframe
Pin
•Bond wires (~25m) are used to connect the package to the chip
• Pads are arranged in a frame around the chip
• Pads are relatively large (~100m in 0.25m technology),with large pitch (100m)
•Many chips areas are ‘pad limited’
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Interconnessioni e parassiti 23
Chip Packaging• An alternative is ‘flip-chip’:
– Pads are distributed around the chip– The soldering balls are placed on pads– The chip is ‘flipped’ onto the package– Can have many more pads
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Interconnessioni e parassiti 24
Tristate Buffers
InEn
En
VDD
Out
Out = In.En + Z.En
VDD
In
En
En
Out
Increased output drive
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Interconnessioni e parassiti 25
Reducing the swing
tpHL = CL Vswing/2
Iav
Reducing the swing potentially yields linear reduction in delay Also results in reduction in power dissipation Delay penalty is paid by the receiver Requires use of “sense amplifier” to restore signal level Frequently designed differentially (e.g. LVDS)
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Interconnessioni e parassiti 26
INTERCONNECT
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Interconnessioni e parassiti 27
Impact of Resistance
• We have already learned how to drive RC interconnect
• Impact of resistance is commonly seen in power supply distribution:– IR drop– Voltage variations
• Power supply is distributed to minimize the IR drop and the change in current due to switching of gates
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Interconnessioni e parassiti 28
IR Introduced Noise
M1
X
I
R’
RΔV
Фpre
ΔV
VDD
VDD - ΔVV
I
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Interconnessioni e parassiti 29
19
ASP DAC 2000
Power Dissipation TrendsPower Dissipation Trends
Power consumption is increasingPower consumption is increasing Better cooling technology neededBetter cooling technology needed
Supply current is increasing faster!Supply current is increasing faster!
OnOn--chip signal integrity will be a major chip signal integrity will be a major issueissue
Power and current distribution are criticalPower and current distribution are critical
Opportunities to slow power growthOpportunities to slow power growth Accelerate Accelerate VddVdd scalingscaling
Low κ dielectrics & thinner (Cu) Low κ dielectrics & thinner (Cu) interconnectinterconnect
SOI circuit innovations SOI circuit innovations
Clock system designClock system design
micromicro--architecturearchitecture
Power Dissipation
020406080
100120140160
EV4 EV5 EV6 EV7 EV8
Po
we
r (W
)
0
0.5
1
1.5
2
2.5
3
3.5
Vol
tage
(V
)
Supply Current
0
20
40
60
80
100
120
140
EV4 EV5 EV6 EV7 EV8
Curr
ent (
A)
0
0.5
1
1.5
2
2.5
3
3.5
Vo
ltag
e (
V)
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Interconnessioni e parassiti 30
Resistance and the Power Distribution Problem
• Requires fast and accurate peak current predictionRequires fast and accurate peak current prediction• Heavily influenced by packaging technologyHeavily influenced by packaging technology
BeforeBefore AfterAfter
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Interconnessioni e parassiti 31
Power Distribution
• Low-level distribution is in Metal 1• Power has to be ‘strapped’ in higher layers of
metal.• The spacing is set by IR drop,
electromigration, inductive effects• Always use multiple contacts on straps
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Interconnessioni e parassiti 32
3 Metal Layer Approach (EV4)
3rd “coarse and thick” metal layer added to thetechnology for EV4 design
Power supplied from two sides of the die via 3rd metal layer
2nd metal layer used to form power grid
90% of 3rd metal layer used for power/clock routing
Metal 3
Metal 2
Metal 1
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Interconnessioni e parassiti 33
2 reference plane metal layers added to thetechnology for EV6 designSolid planes dedicated to Vdd/Vss
Significantly lowers resistance of gridLowers on-chip inductance
6 Metal Layer Approach – EV6
Metal 4
Metal 2Metal 1
RP2/Vdd
RP1/Vss
Metal 3
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Interconnessioni e parassiti 34
Electromigration
Limits dc-current to 1 mA/m
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Interconnessioni e parassiti 35
The Global Wire Problem
Challenges• No further improvements to be expected after the
introduction of Copper (superconducting, optical?)• Design solutions
– Use of fat wires– Insert repeaters — but might become prohibitive (power, area)– Efficient chip floorplanning
• Towards “communication-based” design – How to deal with latency?– Is synchronicity an absolute necessity?
outwwdoutdwwd CRCRCRCRT 693.0377.0
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Interconnessioni e parassiti 36
Interconnect Projections: Copper
• Copper is planned in full sub-0.25 m process flows and large-scale designs (IBM, Motorola, IEDM97)
• With cladding and other effects, Cu ~ 2.2 -cm vs. 3.5 for Al(Cu) 40% reduction in resistance
• Electromigration improvement; 100X longer lifetime (IBM, IEDM97)
– Electromigration is a limiting factor beyond 0.18 m if Al is used (HP, IEDM95)
Vias
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Interconnessioni e parassiti 37
Diagonal Wiring
y
x
destination
Manhattan
source
diagonal
• 20+% Interconnect length reduction• Clock speed Signal integrity Power integrity • 15+% Smaller chips plus 30+% via reduction
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Interconnessioni e parassiti 38
Reducing RC-delay
Repeater
(chapter 5)
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Interconnessioni e parassiti 39
Repeater Insertion (Revisited)
Taking the repeater loading into account
For a given technology and a given interconnect layer, there exists For a given technology and a given interconnect layer, there exists an optimal length of the wire segments between repeaters. The an optimal length of the wire segments between repeaters. The delay of these wire segments is delay of these wire segments is independent of the routing layer!independent of the routing layer!