Transcript
Page 1: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Magnetocapacitive effect in SDW system (TMTSF)2AsF6

D. Starešinić, D. Dominko, K. BiljakovićInstitute of Physics, Zagreb, CroatiaP. Lunkenheimer, A. LoidlInstitute of Physics, University of Augsburg, Germany

Page 2: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Phase diagram

new properties of SDW glass

SDW1

Page 3: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Low temperature SDW phase

thermodynamics

dielectric response

Lasjaunias et al. PRL 1994

NMR

Takahashi et al. JPSJ 1986

also AMR, microwave response…

Page 4: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Multiferroic SDW

SDW: incommensurate AFM + relaxor ferroelectric two coexistent ferroic orders possible multiferroic behaviour

SDW

Nad et al. SSC 1995 Levstik et al. PRB 1998

relaxor ferroelectric

Betouras et al. PRL 2007

Page 5: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Experiments (TMTSF)2AsF6

very similar to (TMTSF)2PF6

Dielectric measurements in magnetic field T down to 1.9 K B up to 8 T f 20 Hz – 1 MHz

j||a, B||c* Vac=5 mV (instrument limit)

too low for high precision

too high for SDW systems (ET~10 mV/cm) Hemberger et al. Nature 2005

Page 6: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Resistance

0 0.2 0.4 0.610

2

103

104

105

106

1/T (K)

R (

)

HT

LT

0 2 4 6 810

12

14

16

18

20

22

B (T)

(K

)

HTLT

B=0 T

B=8 T

Page 7: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Magnetoresistance

MR roughly linear in B T dependence similar to (TMTSF)2PF6

0 2 4 6 80

1

2

3

4

B (T)

(R(B

)-R

(0))

/R(0

)

0 2 4 6 8 10 120

0.1

0.2

0.3

0.4

0.5

T (K)

d(R

(B)/R

(0))

/d(B

)

1.9 K

Page 8: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

1.5 2 2.5 310

6

107

108

T (K)

Re

1.5 2 2.5 3

107

T (K)

Re

Dielectric constant

Similar as in (TMTSF)2PF6

B increases dielectric constant and relaxation time

1.5 2 2.5 310

6

107

108

T (K)R

e

B=0 T B=8 T

300 kHz300 kHz

1.6 kHz

80 Hz

Page 9: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Frequency dependence at 1.9 KCole-Cole fit

1)(1

)(i

102

103

104

10510

6

107

108

f (Hz)

Re

102

103

104

10510

6

107

f (Hz)

Im

0 T

8 T

0 T

8 T

104

10510

6

107

f (Hz)

Re

B||b’

0 T

5 T

Page 10: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Parameters at 1.9 K

Littlewood’s pinning&screening theory does not work increases faster than the order parameter B increases domain cooperativity?

)/exp( 00 BB

)/exp( *00 BB

BB dcdc ~)0(/)(

TBTB

28.3

*0

0

0 2 4 6 810

-4

10-3

10-2

10-1

B (T)

,

,

dc

10-10

dc

Page 11: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Temperature vs field dependence

102

103

104

10510

6

107

108

f (Hz)

Re

102

103

104

10510

6

107

f (Hz)

Im

0 T

8 T

0 T

8 T 102

103

104

10510

6

107

108

f (Hz)

Re

102

103

104

105

106

107

f (Hz)

Im

1.9 K

1.9 K

2.9 K

2.9 K

1.9 K 8 T

Suggests B-T scaling!

Page 12: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Temperature dependence

0.4 0.45 0.510

6

107

108

1/T (K)

0.4 0.45 0.5

10-5

10-4

10-3

1/T (K)

(s

)

0.4 0.45 0.510

6

107

108

1/T (K)

0.4 0.45 0.5

10-5

10-4

10-3

1/T (K)

(s

)

0 2 4 6 810

15

20

25

30

35

B (T)

Eac

t (K)

0 2 4 6 810

-11

10-10

10-9

10-8

B (T)

0, 0

0 10-13

0

)/exp(0 TEact

0 T

8 T

0 T

8 T

)/exp(0 TEact

Page 13: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Field dependence

0 2 4 6 810

6

107

108

B (T)

0 2 4 6 8

10-5

10-4

10-3

B (T)

(s

)

0 2 4 6 810

6

107

108

B (T)

0 2 4 6 8

10-5

10-4

10-3

B (T)

(s

)

1.8 2 2.2 2.4 2.62

4

6

8

10

12

T (K)

B0 (T

)

0.4 0.45 0.510

-7

10-6

10-5

10-4

1/T (K)

,

0

010-13

0

Eact=26 K

Eact=13 K

)/exp( 00 BB

1.9 K

1.9 K

)/exp( 00 BB

2.6 K

2.6 K

Page 14: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Conclusions huge magnetocapacitive effect in

(TMTSF)2AsF6

multiferroic nature of low temperature SDW state

not the consequence of screening no simple relation between the (B¸,T),

(B,T) and (B,T) further measurements with better samples

at lower T, lower f and lower Vac


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