Invention of ALDand protection of knowledge
Tuomo Suntola
Winter‐School 09 ‐ 12, January 2012University of Helsinki, Department of Chemistry
Invention of ALD and protection of knowledge
1. Background
2. Identification of the goal and the problem
3. The solution
4. Patents / Unpublished knowhow
5. Balance between publicity and confidentiality
Winter‐School 09 ‐ 12, January 2012 University of Helsinki, Department of Chemistry
Environment for ALD innovation
1973
Instrumentarium Oy‐ Search for new challengesLate 1973
Technology background‐ thin film technologies‐ semiconductor devices
Proposal for EL‐flat panel development, March 1974
Confidence for industrial success
1.1.1974
Invention of ALD
State of the art:‐ High performance demonstrated‐ Major problems with stability due
to high operational voltage
Proposal for EL‐flat panel development, March 1974
Novel thin film processing technique
is needed
Buildup of ordered film structure requires ordered
processing condition
Idea of sequential buildup of compounds,
June 1974
1. ALD processing of ZnS,September 1974
From idea to demonstration
Idea of sequential buildup of compounds,
June 1974
0.4
m0.6
0.2
00 20
Hexagonal ZnS: monolayer 3.13 Ån=2.36
minutes
1/3 x monolayer
10 torr
360 C
4x10 torr
3x10 torr2x10 torr
2 c/s
Zn
S
320 C
100 C
Construction of testequipment
From idea to patents
Method for producing compound thin films:Definition of conditions for ALD reaction to occur
Invention or a law of nature?
Oral hearing by examiners at
‐ US P.O., Washington‐ Soviet P.O., Moskow‐ Japan P.O., Tokyo‐ Germany P.O., Munich
1977‐11‐15, US 4.058.430
Demonstration,Sept 1974
Idea, June 1974
1. ALD patent,November 1974Worldwide
Demonstration,Sept 1974
From idea to patentsIdea, June 1974
1. ALD patent,November 1974Worldwide
2. ALD patent,February 1979Worldwide
Method for performing growth of compound thin films:
A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.
Method for producing compound thin films:Definition of conditions for ALD reaction to occur
Invention or a law of nature?
Oral hearing by examiners at
‐ US P.O., Washington‐ Soviet P.O., Moskow‐ Japan P.O., Tokyo‐ Germany P.O., Munich
1977‐11‐15, US 4.058.430 1983‐11‐01, US 4.413.022
Demonstration,Sept 1974
From idea to patentsIdea, June 1974
1. ALD patent,November 1974Worldwide
2. ALD patent,February 1979Worldwide
Method for performing growth of compound thin films:
A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.
Method for producing compound thin films:Definition of conditions for ALD reaction to occur
Invention or a law of nature?
Oral hearing by examiners at
‐ US P.O., Washington‐ Soviet P.O., Moskow‐ Japan P.O., Tokyo‐ Germany P.O., Munich
1977‐11‐15, US 4.058.430 1983‐11‐01, US 4.413.022
Method for performing growth of compound thin films
Method for performing growth of compound thin films
Activation of academic work
First public presentation of ALD as a thin film method in the Fifth International Conference on Vapor Growth and Epitaxy1981
Steps in publicity
First public presentation of ALD‐EL devicesin SID 1980 conference in San Diego
Atomic Layer Epitaxy in Semiconductor Devices Applications, MRS Boston 1994
Commercial interest in EL displays
III‐V ALD Activity in Japan
Commercial ALD‐reactors byMicrochemistry Ltd.
Development steps in the ALD
Need, solution, demonstration, basic patentsProduct prototypes, reactors for production
Commercial production of EL panels, Lohja / Planar
1970 1980 1990 2000 2010
Research for ALD chemistry and new applications
Microchemistry Ltd 1999 ASM Microchemistry2004 Picosun Oy2005 Beneq Oy
Fast increase of ALD activityresearch & industrial
Invention of ALDand protection of knowledge
Tuomo Suntola
Winter‐School 09 ‐ 12, January 2012University of Helsinki, Department of Chemistry