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Course: Analog Circuit Design
Time schedule:Tu 11.00-13.00We 14.00-16.00Th 14.00-16.00
Office hours: Tu 16.00-18.00
Exams:Feb. (2), Jun.-Jul. (2), Sep. (2)Oral examination
Additional course material:ftp://ftp.dii.unisi.it/pub/users/vignoli/Analog_Circuit_Design
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References:
F. MalobertiAnalog Design for CMOS VLSI SystemsKluwer 2001
J. Millman, C. HalkiasIntegrated Electronics: Analog and Digital Circuit and SystemsMcGraw-Hill 1972
R. Spencer, M. GhausiIntroduction to Electronic Circuit DesignPrentice Hall 2003
P. Gray, R MeyerAnalysis and Design of Analog Integrated Circuits (3rd ed.)Wiley 1993
M.S. TyagiIntroduction to Semiconductor Material and DevicesWiley 1991
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MATERIALS: electric behavior
semiconductor Insulator conductor
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In semiconductors EF is in the Band-Gap
SEMICONDUCTORS: electric behavior
kT
EE F
e
Ef
1
1)(
Fermi-Dirac distribution: occupation probability for the energy level E
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NC is the number of available states (per cm-3) in the conduction band
kT
EE
CkT
EEd
eii
FcFc
eNekTh
mdEEfENpn
2/3
2'
2
4
1)()(
where Ne(E) is Energetic State Density function in the material.
Intrinsic Semiconductors: free carriers
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DOPING
The Fermi energy
moves with doping
EF n-type
EF p-type
T effect
ACCEPTORDONOR
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PHOTOLITOGRAPHY
Photoresist
spin.-coating
Thick film: 1 mm
EXPOSITION:
The mask is transferred to
the photoresist
Uv - X-ray
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• The photoresist chemically reacts and dissolves in the developing solution, only on the parts that were not masked during exposure (positive method).
• Development is performed with an alkaline developing solution.
• After the development, photoresist is left on the wafer surface in the shape of the mask pattern.
Masked photoresist
solvents remove exposed (unexposed) resistEtching removes material from wafer surface where resist has been removed
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Wet etching
Dry etching
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Also PVD
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Materials: Si substrate• Monocrystalline silicon is
produced from purified polycrystalline silicon by “pulling” an ingot– polysilicon is melted
using radio frequency induction heaters
– “seed crystal” of monocrystalline silicon is dipped into melt
– silicon grows around structure of seed as seed is slowly withdrawn
• Sawed into wafers about 600 microns thick– only a few microns are
actually used for IC devices
– then etched, polished, and cleaned
– stacked in carriers
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• Single crystal silicon – SCS– Anisotropic crystal– Semiconductor, great heat conductor
• Silicon dioxide is created by interaction between silicon and oxygen or water vapor
– Si + O2 = SiO2 or Si + 2H2O = SiO2 + 2H2
– Excellent thermal and electrical insulator– protects surface from contaminants– forms insulating layer between conductors– forms barrier to dopants during diffusion or ion implantation– grows above and into silicon surface– Thermal oxide, LTO, PSG: different names for different deposition conditions and
methods• Polycrystalline silicon – polysilicon
– Mostly isotropic material– Semiconductor– also a conductor, but with much more resistance than metal or diffused layers– created when silicon is epitaxially grown on SiO2
– commonly used (heavily doped) for gate connections in most MOS processes
• Silicon nitride – Si3N4
– Excellent electrical insulator• Aluminum – Al
– Metal – excellent thermal and electrical conductor
Materials
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EFFECT OF FLATBAND VOLTAGE VFB (VFB < 0)
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VGB = 0
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GATEPolisilicon
OXIDESiO2
SUBSTRATEP-type Si
SUBSTRATE CONTACTPolisilicon
- -
Space charge regions
x-tOX 0 xD
x-tOX 0 xD
PotentialVGB-VFB
-VFB
VGB
VOX
Φs(0)
+
VOX
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STRONG INVERSION CONDITION
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SMALL SIGNAL EQUIVALENT CIRCUIT OF A MOS TRANSISTOR
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MOS TRANSISTOR LAYOUT
•SOURCE AND DRAIN PARASITIC RESISTANCES
•SOURCE AND DRAIN PARASITIC CAPACITANCES
•MATCHING
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SOURCE AND DRAIN PARASITIC RESISTANCES
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SOURCE AND DRAIN PARASITIC CAPACITANCES
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MATCHING
You must avoid:
D DS S
Use always the same MOS orientation in your layout: silicon is anisotropic
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MATCHING
1
2 3
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MATCHING
1
2 3
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MATCHING
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DESIGN RULES
Geometrical recommendations due to the limited accuracy of the technology (mask alignment, lateral diffusion, etching undercut, optical resolution…)Design Kit: design rules + Spice models and technology features
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INTEGRATED RESISTORS 1
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DIFFERENT SOLUTIONS (a)
INTEGRATED RESISTORS 2
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POLYSILICON RESISTORS
•Lower coupling with substrate
•Up to two shieldings
•Top shielding (from noisy metal lines, package coupling….)
DIFFERENT SOLUTIONS (b)
INTEGRATED RESISTORS 3
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INTEGRATED RESISTORS 3
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•Poor absolute accuracy (20-40% - large parameter drift)•Good matching (ratio) accuracy (0.1-0.2% - it depends on local parameter variations)
INTEGRATED RESISTORS 4
FACTORS AFFECTING ACCURACY
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Design Guidelines (a)
INTEGRATED RESISTORS 5
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Design Guidelines (b)
INTEGRATED RESISTORS 6
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Design Guidelines (c)
INTEGRATED RESISTORS 7
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INTEGRATED CAPACITORS 1
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INTEGRATED CAPACITORS 2
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tox ≤ 10 nmεr(SiO2)=3.8COX ~ 3.36 fF/μm2COX
INTEGRATED CAPACITORS 3
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INTEGRATED CAPACITORS 4
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INTEGRATED CAPACITORS 5
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A’ = W’L’ WL – 2 (L+W)Δx = A – P Δx = A (1 - Δx P/A)
•The relative reduction of A remains constant, given Δx, if the ratio P/A is constant (matched elements)
•The fringe effect increases the capacitance at the plate boundary proportionally tox P/A -> (L, W >> tox)
•Effect of the thick oxides at the plate boundary
INTEGRATED CAPACITORS 6
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Layout examples for poly1-poly2 capacitors
INTEGRATED CAPACITORS: LAYOUT 1
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Matching: capacitors with integer ratio
Shielding (well)
INTEGRATED CAPACITORS: LAYOUT 2
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Matching: capacitors with not-integer ratio
squared capacitors with area C1 = L2 [C2/C1]
1 rectangular capacitor with area Ck= Wk Lk = (C2/C1 - ) C1
All the capacitors with constant P/A
L2/4L=L/4=LkWk/2(Lk + Wk)Ck/C1=LkWk/L2
[C2/C1]
INTEGRATED CAPACITORS: LAYOUT 3
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PASSIVE COMPONENTS: CAPACITORS – Design Guidelines