Transcript
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Key educational goals:

Analyze the basic principle of operation of a MOSFET and its applications.

Reading/Preparatory activities for class

i)Textbook: Chapter 12.

ii) Power-point file:MOSFET

Questions to guide your reading and to think about ahead of time.

1. What are key differences between a MOSFET and a BJT?

2. What are the two different types of MOSFET?

3. The triode and saturation modes of a MOSFET are analogous to which modes in a BJT?

4. In which mode does a MOSFET works like a resistor?.

5. In which mode does the MOSFET work as in an amplifier?

6. In what respect are MOSFET amplifiers better than transistor amplifiers?

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Introduction

Chapter 1: Introduction and Chapter 2:Resistive circuits

The main concepts for the module

1.Contrast the working of a MOSFET with that of a BJT.

2. Categorize the different modes of operation of a MOSFET

3. Identify the application areas with the different modes of operation of a MOSFET.

4. Analyze why.

5.Formulate the basis on which the bias point in terms of the drain current and gate to

source voltage are selected out of two possibilities .

6. Compare the small signal model of a MOSFET with that of a BJT.

7.Compare the common source amplifier with a common emitter amplifier and a

an emitter follower with a source follower.

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Summary

The knowledge gained from this module will be useful in understanding simple logic circuits

(CMOS logic gates) and amplifiers for applications where BJT amplifiers are not suitable.

For next time

We will next look into the operational amplifiers which uses amplifier configurations shown

with MOSFETs and BJTs along with some additional circuits to increase input impedance, gain

and stability.

.

Sample test/exam questions/problems to help you study:

1. For Fig. 1 in the next slide draw small signal equivalent circuit ,assuming that the capacitors are

short circuits for the ac signal.

2. For Fig.2 in the next slide find the output impdedance. Vto = 3V and K=0.5mA/V2.

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•Fig.1

•Fig.2

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MOSFET 5

MOSFET

• Introduction to MOSFET

• MOSFET structure and symbols

• Biasing N-channel MOSFET

• Conduction and output characteristics of N-channel

MOSFET

• Setting up bias point of a MOSFET

• Small signal model of a N-channel MOSFET

• Common Source and source follower amplifier analysis

• Comparison the input and output impedance of BJT and

MOSFET amplifiers

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MOSFET 6

Transistors

•They are unidirectional current carrying devices like diodes with

capability to control the current flowing through them

• The switch current can be controlled by either current or voltage

• Bipolar Junction Transistors (BJT) control current by current

• Field Effect Transistors (FET) control current by voltage

•They can be used either as switches or as amplifiers

•Diodes and Transistors are the basic building blocks of the

multibillion dollar semiconductor industries

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MOSFET 7

MOSFET: Metal Oxide Semiconductor

Field Effect Transistor

• A voltage controlled device

• Handles less current than a BJT

• Two types NMOS and PMOS

• Easier to manufacture

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MOSFET 8

MOSFET Structure

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MOSFET 9

N-Channel MOSFET Symbol

•D : Drain, S: Source, G: Gate, B: Body

•Normally Body and Source are shorted internally

•Drain current is controlled by controlling Gate to

Source Voltage

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MOSFET 10

Biasing N-Channel MOSFET

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MOSFET 11

Biasing N-Channel MOSFET (2)

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MOSFET 12

Conduction of N-Channel MOSFET

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MOSFET 13

Output Characteristics of N-Channel

MOSFET Triode region of

MOSFET is

equivalent to

saturation region of

BJT. Here the

MOSFET works like

a resistor.

Saturation region of

MOSFET is

equivalent to Active

region of BJT. Here

the MOSFET works

as in an amplifier.

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MOSFET 14

Relationship between Drain Current and

Gate to Source Voltage of MOSFET

In Triode Region: iD = K [2(vGS-Vto)vDS-v2DS]

In Saturation Region: iD = K [(vGS-Vto)2]

At the Boundary between the Triode and Saturation Region:

iD = K v2DS (How?)

K =Device Constant which can vary from device to device

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MOSFET 15

Fixed Plus Self Bias CircuitA Good circuit to establish stable Q point that is relatively

independent of device parameter

21

2DDTHG

RR

RVVV

21

21THG

RR

RRRR

Gate Current iG = 0

(why?)

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MOSFET 16

To Find iD and VGS in a Fixed Plus

Self Bias Circuit

•The circuit operates in

Saturation Mode

•Discard the extraneous root

•iD and VGS can also be obtained

by solving the quadratic

equation involving iD or VGS

that can be

obtained using 12.12 and 12.13

(see example 12.2)

Equation 12.12

Equation 12.13

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MOSFET 17

Common Source Amplifier(Analogous to Common Emitter Amplifier)

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MOSFET 18

Small-Signal Equivalent Circuit Of

MOSFET

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MOSFET 19

Reason for Modification of Small- Signal

Equivalent Circuit Of MOSFET

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MOSFET 20

Derivation of the Small-Signal Equivalent

Circuit of MOSFET on the Greenboard

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MOSFET 21

Small Signal AC Equivalent Circuit

for Common Source Amplifier

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MOSFET 22

Derivation of the Av etc. of the CS

amplifier on the Greenboard

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MOSFET 23

Source Follower(Analogous to Emitter Follower)

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MOSFET 24

Small Signal AC Equivalent Circuit

for Source Follower

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MOSFET 25

Derivation of the Av etc. of the Source

Follower on the Greenboard

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MOSFET 26

Type of

Amplifier

Input

Impedance

Output

Impedance

CE Few k Few k

Emitter

Follower

Tens of k Few

CS Hundreds of

k

Few k

Source

Follower

Few M Few

Typical Input and Output Impedances of

Different types of Amplifiers

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MOSFET 27

Other MOS Application-Active Load

MOS ‘resistor’ occupies a lot less space

on an IC than a resistor

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MOSFET 28

Other MOS Application- CMOS Inverter


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