The aim of the NEMO collaboration is to investigate neutrinoless double-beta decay. This research is one of the principal topics in neutrino physics, which is a subfield of particle physics with cosmological and astrophysical implications.
Double-beta decay experiments can play a particularly interesting role in providing the answers to questions on the nature of the neutrino. Of paramount importance is the identification of the neutrino as a Dirac particle or Majorana particle.
The SuperNemo detector will be composed of about 20 modules. Each module will contain a chamber to measure the particle path and a calorimeter to measure the energy.
The SNATS chip has been designed for the calorimeter.
SNATS SuperNemo Absolute Time Stamper, a high resolution and large dynamic range TDC for SuperNemo experiment
aDominique Breton, bLaurent Leterrier, aVanessa Tocut, bPhilippe Vallerand, aCNRS/IN2P3/LAL-ORSAY, bCNRS/IN2P3/LPC-CAEN/SEM
Introduction: SuperNemo experiment
SNATS
Tests and measurements
Calorimeter Front-End Electronics
Timing characteristics: Bin size (LSB): 195.3ps Reference clock frequency: 160 MHz Dynamic range: ~20 days Single channel mode: Resolution 71ps (RMS) DNL single ( / max): 0.083 / 0.2 LSB INL single ( / max): 0.36 / 1.3 LSB Differential channel mode: Resolution 101ps (RMS) DNL diff ( / max): 0.024 / 0.08 LSB INL diff ( / max): 0.514 / 1.8 LSB Crosstalk: < 1 bin
Functional characteristics: Number of channels: 16 Power consumption: 380mW Reference clock frequency levels: LVDS or CMOS Hit inputs logic levels : LVDS or CMOS Buffer depth (hit register): 1 Output word length: 16 bits Silicon area: 12.7mm2
Package: 100-pin ceramic CQFP
Test board
20,000 PhotoMultipliers
1,250 SNATS chips
INL histogram
1 SuperNemo detector module
For running in double-beta mode in the SuperNEMO experiment, it has been decided to work without a hardware trigger and with absolute time measurements.
To achieve this requirement, a time stamp system is needed for the calorimeter front-end electronics.
The SNATS chip is designed to provide both a high resolution of 70ps RMS and a large dynamic range of 53 bits.
voltage controlled
delay line : 32 cells
Phase
Detector
Master
Clock
Hit Fine Time Memory
32 shifted
phase clocks
@ 160 MHz
Delay Locked Loop
Coarse Time Counter
48 bits
Coarse Time Memory
Fine
Time
Decoder
48 bits
Time
measurement :
53 bits
48 bits
5 bits
SNATS principle
Fine time measurement (high resolution) Delay Locked Loop Coarse time measurement (dynamic range) 48-bit counter
Association of a counter and an interpolator
SNATS architecture 8 DLL’s single ended (1 DLL for 2 channels) and a common counter
Based on the association of a first starved inverter followed by a second standard inverter.
DLL’s delay cell
Voltage controlled delay cell curve
100
150
200
250
300
350
400
450
1 1,5 2 2,5
Voltage charge pump (V)
(ps)
Cell
delay
DLL’s delay cell
Only one counter is used -> synchronizer to avoid any junction error
Synchronizer block diagram
Readout interface
the principle consists in generating a hit coarse delayed
in function of the relative position of the hit arrival
within the clock period. Timing of the specific synchronizer signals
1 hit register of 16 bits 1 data register of 4 x 16 bits : 53 significant bits of data (all gray) Readout clock: 40 MHz Max readout time (1 ch): 400ns
Synchronizer
195ps
slope 0.15 ps/mV
DNL histogram
Conversion error histogram Conversion error histogram
DNL histogram
INL histogram
Single channel measurement Differential channel measurement
Clock
Hit
MSB bits
Time measurement
Counter
DLL
Synchroniser
LSB bits
Latchin
out
L
Registerin
out
C
hit_counter
Latchin
out
L
Register
in out
Chit_dll
status_dll
Clock
Hit
MSB bits
Time measurement
Counter
DLL
Synchroniser
LSB bits
Latchin
out
L
Registerin
out
C
Latchin
out
L
Registerin
out
C
hit_counterhit_counter
Latchin
out
L
Register
in out
C
Latchin
out
L
Register
in out
Chit_dll
status_dll
0 1 2 3
10 1 2 3
10 1 2 3
10 1 2 3
10 1 2 3
10 1 2 3
1
Clock
N N+1N-1Counter N N+1N-1Counter
DLL
Hit
Hit _dll
Hit_counter
Hit
Hit _dll
Hit_counter
Status_dllStatus_dll
Hit+<i>
Data_Select<0:1>
Word_Select<0:1>
Adress_ch<0:3>
Data<0:15> 0 Voie touchée = i LSB MSB
0 i
i 0
0
10 01
00 10 01 11 00
10
Clear
4321
Hit register
15 i 0
0 1 00 1 0
Data register
out
VDD
GND
V_control_P
V_control_N
in
V_control_P
V_control_N
VDD
GND
in out
reg1 reg2phase
detector
DNL (/ max): 0.024 / ± 0.08 LSB
-0,04
-0,02
0
0,02
0,04
0,06
0,08
0,1
1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31
bin
DN
L (
LS
B)
DNL ( / max): 0.083 / ± 0.2 LSB
-0,25
-0,2
-0,15
-0,1
-0,05
0
0,05
0,1
0,15
0,2
1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31
bin
DN
L (
LS
B)
Resolution : 71ps (RMS)
Time (ps)
IN
L (
LS
B)
Time (ps)
IN
L (
LS
B)
AMS CMOS 0.35m technology chip area ~ 12.7mm2
SNATS layout
INL (/ max): 0.36 / 1.3 LSB
Timing of parallel read-out signals
DNL (/ max): 0.083 / 0.2 LSB DNL (/ max): 0.024 / 0.08 LSB
calorimeter : 1,000 PhotoMultipliers tracking : 3,000 Geiger cells
Characterization of the Differential NonLinearity ( DNL ) was performed using statistical code density tests from a data set of 1,000,000 random hits.
To measure Integral NonLinearity and time resolution, a linear time sweep over complete dynamic range was performed in order to measure errors of random nature such as jitter, electronic noise…..
A high performance generator was used to provide a time sweep of 5ps. The conversion histogram error includes 1,250,000 measurements generated with a time step of 5 ps, accumulating 1,000 measures per time step.
Concerning the performances, a Differential NonLinearity around 0.2 LSB has been measured, as well as an Integral NonLinearity about 1.3 LSB and a time resolution of 70 ps (RMS).
The static power dissipation is of about 380mW.
DLL registers
5-bit gray encoder
Counter registers
48-bit gray counter
Synchronizer
Hit register
Data
selection
+
-
Adress
decoder
Hit[0:15]
Vcom_hit
+
-
Clk_LVDS+
Clk_LVDS-Clk
195ps 195ps 195ps 195ps
VCDL
Phase
detector
Charge
pumpC
Clk
Clear
Configuration register
BypassLVDS
BypassLVDS
Vcp
Vcp
Enable_clear
Clear
Hit16
Vdll0
Vcom_tuning
VcomVdll_tuning[0:7]
Sel_tuning
Sel_tuning
Sel_out_cp[0:7]
Sel_cp
Vcp_ext
Analog_visu
Sel_out_cp[0:7]
BypassLVDS
Enable_clear16
Sel_cp
Sel_out_cp8 / Sel_cp / BypassLVDS
Analog_visu / Vcp _ext / Vcom_hit
Vcom_tuning
Vdll_tuning8
Sel_tuning
Enable_clearEnable_dll
Dll_out[0:7]
Data_visu[0:5]
Hit_phy
Hit_F
Hit_C
Status
Hit_reg
Counter[0:47]
Adr_ch
C[0:4]
Error
Q_reg[0:47]
DLL_reg[0:31]
Data_visu6
Visu_counter[0:25]
Data_visu
[7:15]
Data_out
[0:15]
Enable
Sclk
Sdata_in
Sdata_out
Addr_ch[0:3]
Data_sel[0:1]
Word_sel[0:1]
X8DLL
DLL
1 Channel logic
Channel logic
X2
Test channel
8 blocks16 channels
4x16bits
Hit_reg[0:15]
DLL registers
5-bit gray encoder
Counter registers
48-bit gray counter
Synchronizer
Hit register
Data
selection
+
-
Adress
decoder
Hit[0:15]
Vcom_hit
+
-
Clk_LVDS+
Clk_LVDS-Clk
195ps 195ps 195ps 195ps
VCDL
Phase
detector
Charge
pumpCC
Clk
Clear
Configuration register
BypassLVDS
BypassLVDS
Vcp
Vcp
Enable_clear
Clear
Hit16
Vdll0
Vcom_tuning
VcomVdll_tuning[0:7]
Sel_tuning
Sel_tuning
Sel_out_cp[0:7]
Sel_cp
Vcp_ext
Analog_visu
Sel_out_cp[0:7]
BypassLVDS
Enable_clear16
Sel_cp
Sel_out_cp8 / Sel_cp / BypassLVDS
Analog_visu / Vcp _ext / Vcom_hit
Vcom_tuning
Vdll_tuning8
Sel_tuning
Enable_clearEnable_dll
Dll_out[0:7]
Data_visu[0:5]
Hit_phy
Hit_F
Hit_C
Status
Hit_reg
Counter[0:47]
Adr_ch
C[0:4]
Error
Q_reg[0:47]
DLL_reg[0:31]
Data_visu6
Visu_counter[0:25]
Data_visu
[7:15]
Data_out
[0:15]
Enable
Sclk
Sdata_in
Sdata_out
Addr_ch[0:3]
Data_sel[0:1]
Word_sel[0:1]
X8DLL
DLL
1 Channel logic
Channel logic
X2
Test channel
8 blocks16 channels
4x16bits
Hit_reg[0:15]
16 PMsSlow Shaper
PACTrack & Hold
Fast Shaper CFD
SNIFE (SuperNemo Integrated Front-end)
SNATS
ADC
12bits / 40MHz
FPGA
Cyclone 3
1616
Data
Readout
16 channel front-end board
Clock Multiplier
SI5325CLK
40MHz
160MHz
Control
9
6
Data acquisition
16 PMs16 PMsSlow ShaperSlow Shaper
PACPACTrack & HoldTrack & Hold
Fast ShaperFast Shaper CFDCFD
SNIFE (SuperNemo Integrated Front-end)
SNATS
ADC
12bits / 40MHz
ADC
12bits / 40MHz
FPGA
Cyclone 3
1616
Data
Readout
16 channel front-end board
Clock Multiplier
SI5325CLK
40MHz
160MHz
Control
9
6
Data acquisition
Resolution : 101ps (RMS)
INL (/ max): 0.514 / 1.8 LSB
8 dual channel blocks
16 coarse time registers
48-bit counter
100-pin ceramic CQFP
SNATS package