1 2 3

4 5

7 6

Absolute Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage VCES 1200 V

Gate-Emitter Voltage VGES ±20 V

Continuous Collector Current TC = 25

IC

300 A

TC = 100 150 A

Pulsed Collector Current (Note 1) ICM 300 A

Diode Continuous Forward Current TC = 100 IF 88 A

Power Dissipation TC = 25

PD

625 W

TC = 100 250 W

Operating Junction Temperature TJ -40 ~ 150

Storage Temperature Range TSTG -40 ~ 150

Thermal Characteristics

Parameter Symbol Value Unit

Typical Thermal resistance, Junction-to-Case (Per ½ Module) RθJC (IGBT) 0.2 K/W

Typical Thermal resistance, Junction-to-Case (Per ½ Module) RθJC (DIODE) 0.6 K/W

Notes :

(1) Repetitive rating : Pulse width limited by maximum junction temperature

Features • 1200V NPT Trench Technology

• Fast & Soft inverse Diodes

• Positive Temperature Coefficient

• Short Circuit Withstanding Time 10μs

• UL certified, file No. E490086

Applications Motor driver, IH(Induction heating), Rectifier, Welder

General Description ZBMCC IGBT power module provides low conduction

& switching loss as well as short circuit ruggedness.

It is designed for applications such as Motor Driver, IH

& Rectifier applications.

MG150MA120BUT

www.zbmcc.com Rev.Tr preliminary data 201909 1·

Electrical Characteristics of the IGBT Tj=25, unless otherwise noted

Parameter Symbol Test condition Min. Typ. Max. Unit

OFF

Collector – Emitter Breakdown Voltage BVCES VGE = 0V, IC = 1mA 1200 -- -- V

Zero Gate Voltage Collector Current ICES VCE = 1200V, VGE = 0V -- -- 1 mA

Gate – Emitter Leakage Current IGES VCE = 0V, VGE = ± 20V -- -- ± 100 nA

ON

Gate – Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 250μA 4.0 -- 7.5 V

VGE = VCE, IC = 150mA 5.0 -- 8.5 V

Collector – Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 150A, Tj = 25 -- 2.3 2.8 V

VGE = 15V, IC = 150A, Tj = 150 -- 2.5 3.0 V

DYNAMIC

Input Capacitance CIES VCE = 25V,

VGE = 0V

f = 1MHz

-- 20 -- nF

Output Capacitance COES -- 980 -- pF

Reverse Transfer Capacitance CRES -- 450 -- pF

SWITCHING

Turn-On Delay Time td(on)

VCC = 600V, IC = 150A

RG = 1.1Ω, VGE = ±15V

Inductive Load, Tj = 25

-- 85 -- ns

Rise Time tr -- 45 -- ns

Turn-Off Delay Time td(off) -- 340 -- ns

Fall Time tf -- 70 -- ns

Turn-On Switching Loss EON -- 1.8 -- mJ

Turn-Off Switching Loss EOFF -- 6.1 -- mJ

Total Switching Loss ETS -- 7.9 -- mJ

Turn-On Delay Time td(on)

VCC = 600V, IC = 150A

RG = 1.1Ω, VGE = ±15V

Inductive Load, Tj = 150

-- 130 -- ns

Rise Time tr -- 65 -- ns

Turn-Off Delay Time td(off) -- 510 -- ns

Fall Time tf -- 100 -- ns

Turn-On Switching Loss EON -- 2.6 -- mJ

Turn-Off Switching Loss EOFF -- 10.7 -- mJ

Total Switching Loss ETS -- 13.3 -- mJ

Total Gate Charge Qg

VCC = 600V, IC = 150A

VGE = 15V

-- 1270 -- nC

Gate-Emitter Charge Qge -- 220 -- nC

Gate-Collector Charge Qgc -- 570 -- nC

Short Circuit Withstanding Time tSC VCC = 600V, VGE = 15V, Tj = 150 10 -- -- μs

MG150MA120BUT

www.zbmcc.com Rev.Tr preliminary data 201909 2·

Electrical Characteristics of the DIODE Tj=25, unless otherwise noted

Parameter Symbol Test condition Min. Typ. Max. Unit

Diode Forward Voltage VFM IF = 150A Tj = 25 -- 1.8 2.6

V Tj = 150 -- 1.9 2.7

Reverse Recovery Current Irr

VCC = 600V, IF = 150A

RG = 1.1Ω, VGE = ±15V

Inductive Load

Tj = 25 -- 65 -- A

Tj = 150 -- 85 --

Reverse Recovery Charge Qrr

Tj = 25 -- 13.5 -- μC

Tj = 150 -- 25.5 --

Reverse Recovery Energy Err

Tj = 25 -- 4.3 -- mJ

Tj = 150 -- 6.7 --

Characteristics of the Module

Parameter Symbol Test condition Min. Typ. Max. Unit

Isolation Voltage VISO RMS, f=50Hz, t=1 minutes -- 2.5 -- kV

Terminal mounting torque (M5) -- -- 3.0 -- N.m

Weight -- -- 170 -- g

MG150MA120BUT

www.zbmcc.com Rev.Tr preliminary data 201909 3·

0 5 10 15 20 25 300

10

20

30

40

50

60

EON

EOFF

Sw

itch

ing

En

erg

y [

mJ]

Gate Resistor, RG [Ω]

Common Emitter

VCC

= 600V, VGE

= ±15V, IC= 150A

Tj = 25

oC

Tj = 150

oC

100 150 200 250 30010

100td(on)

Sw

itchin

g T

ime [ns]

Collector Current, IC [A]

tr

Tj = 25

oC

Tj = 150

oC

Common Emitter

VCC = 600V, V

GE = ±15V, R

G= 1.1Ω

0 5 10 15 20 25 3010

100

1000

Common Emitter

VCC

= 600V, VGE

= ±15V, IC= 150A

td(off)

Sw

itch

ing

Tim

e [n

s]

Gate Resistor, RG [Ω]

tf

Tj = 25

oC

Tj = 150

oC

0 5 10 15 20 25 3010

100

1000

Tj = 25

oC

Tj = 150

oC

Common Emitter

VCC

= 600V, VGE

= ±15V, IC= 150A

td(on)

Sw

itch

ing

Tim

e [n

s]

Gate Resistor, RG [Ω]

tr

0 1 2 3 40

20

40

60

80

100

120

140

160

180

200

VGE

= 15V

Tj = 25

oC

Tj = 150

oC

Colle

cto

r C

urr

ent, I

C [A

]

Collector - Emitter Voltage, VCE

[V]

0 2 4 6 80

50

100

150

200

17 V

VGE

= 20 V

15 V

12 V

10 V

8 V

Colle

cto

r C

urr

ent, I

C [A

]

Collector - Emitter Voltage, VCE

[V]

Tj = 25

oC

IGBT Characteristics

Fig. 1 Output characteristics Fig. 2 Saturation voltage characteristics

Fig. 3 Turn-on time vs. gate resistor Fig. 4 Turn-off time vs. gate resistor

Fig. 5 Switching loss vs. gate resistor Fig. 6 Turn-on time vs. collector current

MG150MA120BUT

www.zbmcc.com Rev.Tr preliminary data 201909 4·

1 10 100 10000.01

0.1

1

10

10050s

100s

500s1ms

DC operation

IC Max. (pulsed)

Co

llecto

r C

urr

en

t, I

C [

A]

Collector - Emitter Voltage, VCE

[V]

IC Max. (continuous)

10-5

10-4

10-3

10-2

10-1

100

10-4

10-3

10-2

10-1

100

Duty = 0.5

0.1

0.2

0.05

0.01

0.02

T

he

rma

l R

esp

on

se

[Z

thjc

]

Rectangular Pulse Width [sec]

single pulse

0 200 400 600 800 1000 1200 14000

3

6

9

12

15

Tj = 25 C

Gate

-Em

itte

r V

oltage, V

GE [V

]

Gate Charge, Qg [nC]

Common Emitter

IC= 100A, Resistive Load

VCE

=600V

100 150 200 250 3000

4

8

12

16

20

24

28

Common Emitter

VCC = 600V, V

GE = ±15V, R

G= 1.1Ω

Collector Current, IC [A]

EON

Sw

itchin

g E

nerg

y [m

J]

EOFF

Tj = 25

oC

Tj = 150

oC

100 150 200 250 30010

100

1000

Common Emitter

VCC = 600V, V

GE = ±15V, R

G= 1.1Ω

Collector Current, IC [A]

td(off)

Sw

itchin

g T

ime [ns]

tf

Tj = 25

oC

Tj = 150

oC

Fig. 7 Turn-off time vs. collector current Fig. 8 Switching loss vs. collector current

IGBT Characteristics

Fig. 9 Gate charge characteristics Fig. 10 Transient thermal impedance of IGBT

Fig. 11 SOA Fig. 12 RBSOA

1 10 100 10001

10

100

Co

llecto

r C

urr

en

t, I

C [

A]

Collector - Emitter Voltage, VCE

[V]

VGE

= ±15V, Tj = 150

oC

MG150MA120BUT

www.zbmcc.com Rev.Tr preliminary data 201909 5·

0.0 0.5 1.0 1.5 2.0 2.5 3.00

20

40

60

80

100

120

140

160

180

200

Tj = 25

oC

Tj = 150

oC

Forw

ard

Curr

ent, I

F [A

]

Forward Voltage, VF [V]

Diode Characteristics

Fig. 13 Conduction characteristics of Diode

MG150MA120BUT

www.zbmcc.com Rev.Tr preliminary data 201909 6·

www.zbmcc.com Rev.Tr preliminary data 201909 7·

MG150MA120BUT

Package Outline (Unit: mm):

Internal Circuit:

MG75MA120BUT

www.zbmcc.com Rev.Tr preliminary data 201909 8 ·