doc no. tt4-ea-14952 1 2 3 4 (0.81)€¦ · doc no. tt4-ea-14952 revision. 3 established :...
TRANSCRIPT
Notification about the transfer of the semiconductor business
The semiconductor business of Panasonic Corporation was transferred on September 1, 2020 to Nuvoton Technology Corporation (hereinafter referred to as "Nuvoton"). Accordingly, Panasonic Semiconductor Solutions Co., Ltd. became under the umbrella of the Nuvoton Group, with the new name of Nuvoton Technology Corporation Japan (hereinafter referred to as "NTCJ").
In accordance with this transfer, semiconductor products will be handled as NTCJ-made products after September 1, 2020. However, such products will be continuously sold through Panasonic Corporation.
Publisher of this Document is NTCJ.If you would find description “Panasonic” or “Panasonic semiconductor solutions”, please replace it with NTCJ.
※ Except below description page “Request for your special attention and precautions in using the technical information and semiconductors described in this book”
Nuvoton Technology Corporation Japan
Product Standards
MOS FET
FC8V36060L
Absolute Maximum Ratings Ta = 25 C
Drain-Source Voltage
Gate-source Voltage
Drain Current (DC) *1
Drain Current (Pulsed) *1,*2
Total Power Dissipation *1 (Steady State)
Channel Temperature
Storage Temperature Range
Note *1 Device mounted on a glass-epoxy board coated Copper ( see Fig . 1 )
*2 Ensure that the channel temperature does not exceed 150℃
Page
Equivalent circuit, Pin name
Code ―
4. Gate 8. Drain
1. Source 5. Drain
3. Source 7. Drain
6. Drain
Unit: mm
VDS 60
9
A
A
V
PD 1.3 W
C
VGS 20 V
ID 3
Tch C
IDp
-55
Unit
Embossed type (Thermo-compression sealing) : 3
JEITAParameter
000 pcs / reel (standard)
Panasonic
Symbol Rating
Packaging
Marking Symbol: M2
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
FC8V36060LDual N-channel MOS FET
For lithium-ion secondary battery protection circuits
For load switching
Features
Low drain-source ON resistance:RDS(on) typ. = 70 mW(VGS = 4.5 V)
Halogen-free / RoHS compliant
of 6
WMini8-F1
SC-115
1
2. Gate
150
Tstg to +150
(Fig .1) Glass-Epoxy Board coated Copper FR-4 25.4×25.4×0.8 ( Unit ; mm )
2.8
2.9
(0.81)
2.4
0.3 0.16
0.65
1 2 3 4
5678
Doc No. TT4-EA-14952 Revision. 3
Established : 2014-03-12 Revised : 2016-09-02
Product Standards
MOS FET
FC8V36060L
Electrical Characteristics Ta = 25 C 3 C
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
*1 Assured by design
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Page
ns ID = 3.0 A
1.2
6 ID = 3.0 A
1.4
V
VDD = 30 V, VGS = 10 to 0 Vns
VDD = 30 V
VGS = 0 to 10 V,
ID = 3.0 A
nC
1.2
0.8
V
mW
ID = 480 mA, VDS = 10 V 1.0
ID = 1.5 A, VGS = 4.5 V - 70
pF
mA
50
60 85RDS(on)1 ID = 1.5 A, VGS = 10 VDrain-source On-state Resistance
38
Crss
Coss VDS = 10 V, VGS = 0 V, f = 1 MHz
7
td(off)
Gate-source Charge *1 Qgs
Total Gate Charge *1 Qg
Gate-source Threshold Voltage Vth
Body Diode Forward Voltage VSD
Gate-drain Charge *1 Qgd
3.0
10
IF = 1.5 A, VGS = 0 V
7.0
Turn-on delay Time *1,*2 td(on) 9 VDD = 30 V, VGS = 0 to 10 V
Output Capacitance *1
Reverse Transfer Capacitance *1 20
Fall Time *1,*2 tf
Rise Time *1,*2 tr
Turn-off delay Time *1,*2
2 of
V
mA
6
100
Drain-source Breakdown Voltage VDSS
360
-
RDS(on)2
Input Capacitance *1 Ciss
VGS = 16 V, VDS = 0 VIGSSGate-source Leakage Current
Zero Gate Voltage Source Current IDSS VDS = 60 V, VGS = 0 V
Parameter Symbol Conditions Min Typ Max
10
Unit ID = 1 mA, VGS = 0 V 60
Doc No. TT4-EA-14952 Revision. 3
Established : 2014-03-12 Revised : 2016-09-02
Product Standards
MOS FET
FC8V36060L
*2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time
Page 3 of 6
10 %
90 %
90 %
10 %
90 %
10 %
Vin
Vout
td(on) tr td(off) tf
VDD = 30 V
Vout
Vin
ID = 3.0 A Vin
0 V
10 V PW = 10 μs
D.C. ≦ 1 % D
S
G
50 Ω
Doc No. TT4-EA-14952 Revision. 3
Established : 2014-03-12 Revised : 2016-09-02
Product Standards
MOS FET
FC8V36060L
Technical Data ( reference )
Page
ID - VDS RDS(on) - ID
4 of 6
ID - VGS RDS(on) - VGS
IF - VF Capacitance - VDS
0
5
10
0.0 0.5 1.0
VGS = 10 V
4.5 V
3.5 V
3.0 V Dra
in C
urr
en
t ID
(A
)
Drain-source Voltage VDS (V)
Dra
in-s
ou
rce
ON
-sta
te R
esis
tan
ce
R
DS
(on
) (m
Ω)
Drain Current ID (A)
0
50
100
150
200
0 5 10
10 V
VGS = 4.5 V
Dra
in C
urr
en
t ID
(A
)
Gate-source Voltage VGS (V)
1.E-06
1.E-04
1.E-02
1.E+00
0 1 2 3 4 5
Ta = 125 ºC
85 ºC
25 ºC
-30 ºC
Dra
in-s
ou
rce
ON
-sta
te R
esis
tan
ce
R
DS
(on
) (m
Ω)
Gate-source Voltage VGS (V)
0
40
80
120
160
200
0 5 10 15
Ta = 125 ºC
85 ºC
25 ºC
-30 ºC
ID = 1.5 A
Dio
de F
orw
ard
Curr
ent
IF (
A)
Diode Forward Voltage VF (V)
1.E-07
1.E-05
1.E-03
1.E-01
1.E+01
0.0 0.5 1.0 1.5
Ta = 125 ºC
85 ºC
25 ºC
-30 ºC
Drain-source voltage VDS (V)
Capacitance
C (
pF
)
10
100
1000
0 5 10 15 20
Ciss
Coss
Crss
Doc No. TT4-EA-14952 Revision. 3
Established : 2014-03-12 Revised : 2016-09-02
Product Standards
MOS FET
FC8V36060L
Technical Data ( reference )
Page
Rth - tsw Safe Operating Area
5 of 6
Vth - Ta RDS(on) - Ta
Dynamic Input/Output Characteristics
Temperature Ta (ºC)
Ga
te-s
ou
rce
Th
resh
old
Vo
lta
ge
V
th (
V)
Gate Charge Qg (nC)
Ga
te-S
ou
rce
Vo
lta
ge
V
GS
(V
)
Pulse Width (s)
Th
erm
al R
esis
tan
ce
Rth
(ºC
/W)
Drain-source Voltage VDS (V)
Dra
in C
urr
en
t ID
(A
) D
rain
-so
urc
e O
N-s
tate
Resis
tan
ce
R
DS
(on
) (m
Ω)
Temperature Ta (ºC)
0.1
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
0.001
0.01
0.1
1
10
100
0.1 1 10 100
IDP = 9 A
Operation in this area is limited by RDS(on) (4.5 V)
Ta = 25 ºC,
Mounted on FR4 board (25.4×25.4×t0.8
mm) coated with copper foil,
DC
100 ms
10 ms
1 ms
1 s
40
90
140
-50 0 50 100 150
VGS = 4.5 V
10 V
ID = 1.5 A
1
2
3
-50 0 50 100 150
ID = 480 mA
0
4
8
12
0 2 4 6 8
ID = 3.0 A VDS = 30 V
Doc No. TT4-EA-14952 Revision. 3
Established : 2014-03-12 Revised : 2016-09-02
Product Standards
MOS FET
FC8V36060L
Unit: mm
Page
WMini8-F1
6
6 of
Land Pattern (Reference) (Unit: mm)
0.16+0.10-0.05
2.9±0.1
0.65
2.8±
0.1
0 to 0.02
(0.2)
0.80
±0.05
0.30+0.10-0.05
2.4±
0.1
(0.15)
1 2 3 4
5678
(5°)
(5°)
0.65 0.65 0.65
0.4
0.65
2.4
Doc No. TT4-EA-14952 Revision. 3
Established : 2014-03-12 Revised : 2016-09-02
Request for your special attention and precautionsin using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, thelaws and regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuitexamples of the products. No license is granted in and to any intellectual property right or other right owned byPanasonic Corporation, Nuvoton Technology Corporation Japan or any other company. Therefore, no responsibility isassumed by our company as to the infringement upon any such right owned by any other company which may arise as aresult of the use of technical information de-scribed in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment,communications equipment, measuring instruments and household appliances), or for specific applications as expresslystated in this book.Please consult with our sales staff in advance for information on the following applications, moreover please exchangedocuments separately on terms of use etc.: Special applications (such as for in-vehicle equipment, airplanes, aerospace,automotive equipment, traffic signaling equipment, combustion equipment, medical equipment and safety devices) inwhich exceptional quality and reliability are required, or if the failure or malfunction of the products may directlyjeopardize life or harm the human body.Unless exchanging documents on terms of use etc. in advance, it is to be understood that our company shall not be heldresponsible for any damage incurred as a result of or in connection with your using the products described in this bookfor any special application.
(4) The products and product specifications described in this book are subject to change without notice for modificationand/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operatingconditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceedthe range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Other-wise, we will not be liable for any defect which may arise later in your equipment.Even when the products are used within the guaranteed values, take into the consideration of incidence of break downand failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design,arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages,for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors(ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. We donot guarantee quality for disassembled products or the product re-mounted after removing from the mounting board.When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsedtime since first opening the packages.
(7) When reselling products described in this book to other companies without our permission and receiving any claim ofrequest from the resale destination, please understand that customers will bear the burden.
(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of ourcompany.
No.070920