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MATERIALS INDEX

AlAs, 38, 62, 181, 193, 481 AlGaAs, 4, 28, 35, 56, 63, 73,

85, 110, 123, 142, 181, 201, 217, 283, 294, 317, 331, 336, 348, 356, 443, 449, 509, 530, 547

AlGaAsSb, 437 AlGaInP, 435 AlInAs, 74, 643

Bi-intercalation compounds, 698 Bismuth cuprates, 732 Bn, 677

C diamond, 471 graphite, 677, 696

CdHgTe, 141 CdMnTe, 76, 165 CdTe, 76, 97, 132, 165, 573 CdZnTe, 132

GaAs, 3, 28, 35, 56, 62, 73, 85, 110, 123, 142, 181, 191, 201, 217, 241, 247, 262, 283, 294, 317, 331, 336, 348, 359, 403, 409, 449, 461, 481, 512, 530, 533, 579, 613, 623, 643

GaAsP, 440, 580 GaInAs, 74, 146, 409, 643 GaInAsP, 409, 437 GaInP, 439 GaInSb, 524 GaSb, 142, 527 Ge, 471

HgMnTe, 165 HgTe, 98, 573 HgZnTe, 97

InAlAs, 404, 637 InAs, 148, 410, 533 InAsSb, 141, 435, 580 InGaAlAs, 635 InGaAs, 6, 115, 202, 403, 461,

509, 530, 547, 579, 623, 635, 659

InGaAsP, 613, 626 InP, 115, 403, 409, 613, 635,

651 InSb, 141

Layered cuprates, 729

Metal dihalides, 677

Polydiacetylenes, 798

si, 142, 241, 247 Sic, 471 SiGe, 201, 471, 495, 482, 559,

570, 623, 653, 689 Si02 , 241, 252

Thallium cuprates, 732 Ti/Au, 349 Ti/AuPd, 349 Transition metal dichal­

cogenides, 677

ZnMnTe, 165

a-Sn, 471, 498 a-SnGe, 141

823

SUBJECT INDEX

Absorption spectrum, 193 Accumulation layer, 100 Acoustic phonon scattering, 263 Adiabatic approximation, 362,

378 Anderson Hamiltonian, 270 Anion ordering, 765 Antiferromagnet, 753

quantum, 765 Antiferromagnetic interaction,

175 Artificial creativity, 817 Auger electron spectroscopy,

473 Auger recomination, 609, 625 Avalanche photodiodes, 628

Backdoping, 147 Ballistic constriction, 365 Ballistic devices, 369 Ballistic transport, 236, 247,

261, 268, 369 Band

edge states, 654 gap renormalization, 52 mixing, 231 offsets, 146, 548 structure calculations, 681,

750 Biaxial compression, 182, 510,

551, 560, 625, 639 Biaxial strain, 404, 523, 542,

656 Biexcitons, 93 Biosystems, 807 Bipolarons, 800 Bistability, 300 Bohr radius, 110 Bond polarizability, 502 Breakdown voltage, 615, 631 Bremsstrahlung, 244 Bruggeman theory, 418 Burgers vectors, 464

Carbon cardboards, 703 Carrier-defect complex, 129

Carrier heating, 317 Cathodoluminescence, 114 Charge density, 563, 576

excitations, 13 wave, 709, 761

Charge transfer, 685, 701, 710 Chemical vapor deposition, 241 Coherent transport, 235 Collision broadening, 70, 253 Compressive strain, 590 Conductance

fluctuation, 272 quantization, 369

Conducting phase, 772 Confinement potential, 341 Conjugated cations, 771 Conjugated polymers, 795, 813 Cooling curves, 63 Cooper pairs, 51 Copper-oxygen framework, 729 Correlation, 6 Coulomb hole, 8 Coulomb interaction, 89, 135,

219 Coulomb repulsion, 764 Coulomb scattering, 251, 276 Coulomb screening, 195 Crystal field splitting, 716 cyclic voltammetry, 785 Cyclotron frequency, 18 Cyclotron mass, 210 Cyclotron resonance, 97, 100,

143, 523, 594, 628 band saturated, 307

Dangling bonds, 148 Deformation potential, 63, 511,

657 interaction, 333

Delta doping, 142, 349, 389 Density of states, 664

two-dimensional, 592 three-dimensional, 587

Depolarization factor, 427 Depolarization shift, 44 Diamagnetic energy, 762

825

Diamagnetic shift, 76, 123, 214 Dielectric polarization, 800 Dielectric response, 255 Diode characteristics, 671 Direct contact process, 670 Dislocations, 142 Disorder, 284 Doping profiles, 471 Doublet structure, 226 Drude conductivity, 313 Drude formula, 283

Effective confinement length, 500

Effective mass, 208, 251, 585, 640

approximation, 202, 217 Effective medium theory, 416 Elastic distortion field, 462 Electrolyte, 691 Electron

cooling, 298 focusing, 336 gas

laye:ted, 40 two-dimensional, 4, 28, 37,

142, 236, 247, 261, 294, 327, 335, 347, 359, 370, 387, 643

heating, 236, 336 mean free path, 274 mobility, 61, 353, 236, 248,

262, 640, 643 waveguide, 370

Electron-carrier scattering, 196

Electron-electron interaction, 3, 27, 763

Electron-electron scattering, 251

Electron-hole instability, 761 Electron-hole pairs, 45, 53 Electron-hole plasma, 51, 61

cooling, 62 Electron-hole recombination,

625 Electron-ion exchange, 165 Electron-phonon interaction 32,

61, 194, 763 polar LO, 322

Electron-phonon scattering, 251, 264

Electronegativity, 437, 701 Electroreflectance, 563 Emery model, 750 Emission doublet, 9 Energy loss spectroscopy, 154 Energy relaxation, 61

time, 339 Enthalpy of mixing, 436

826

Envelope function, 205, 217, 517, 543

Epitaxial lift off, 615 Error filter, 815 Etched channels, 617 Etching

damage free, 117 patterned, 113 reactive ion, 124

Even-order nonlinearity, 337 Exchange interaction, 3, 94,

106, 166, 168 Exciton, 109, 123, 168, 213,

509 binding, 58

energy, 74 polaritons, 123 transitions, 76, 167, 186,

196, 204, 516, 542 saddle point, 217, 519

Exciton-exciton coupling, 804 Exciton-ion interaction, 168 Excitonic binding, 3 Excitonic insulator, 51 Excitonic mixing, 80 Excitonic shift, 641

Fabry-Perot structures, 161 Fano resonance, 40, 218 Faraday configuration, 74 Ferromagnet, 756 FET, 623 Field effect, depolarization,

17 Film conductivity, 773 Flared constriction, 378 Flash evaporation, 143 Folded acoustic modes, 483 Fourier transform infrared

spectra, 789 Frequency divider, 650 Frohlich interaction, 63

g-factor, 7 Gain spectrum, 602 Glass formation, 804 Grain boundaries, 774 Graphite network, 699 Grating coupler, 124 Grating coupling, 159 Green function, 217 Growth, three-dimensional, 152,

413 lattice mismatched, 409 layer-by-layer, 403, 537

Gunn effect, 191

Hall effect, 713 fractional quantum, 4, 27,

249 integer quantum, 27

quantum, 109, 247, 370 Hall mobility, 98, 143, 147,

411 Hall resistivity, 6 Har~ree-Fock theory, 52 HBT, 613, 664, 669 Heisenberg model, 754 HEM~, 145, 242, 640, 643 Heterojunction bipolar

phototransistor, 580 Heterojunctions, 3, 45, 100,

261, 647 Highly strained layers, 524 Homoepitaxy, 117 Homogeneous strain relaxation,

454 Hopping transport, 797 Hot electron effects, 236 Hot electrons, 242 Hydrostatic deformation, 582 Hydrostatic pressure, 145, 631

Impact ionization, 629 Impurity scattering, 286, 350

elastic, 379 In-plane conductivity, 702 Incommensurability, 732 Inelastic light scattering, 4

resonant, 12 Inelastic scattering, 238 Inelastic tunneling processes,

299 Infrared bleaching, 317 Infrared singularity, 287 Inter-Landau level excitations,

3, 18 Inter-Landau-Ievel transitions,

135 Interband magnetophoto-

conductivity, 523 Interband transitions, 218 Intercalation, 678 Intercalation compounds, 695 Intercalation reactions, 709 Intercalation stage, 696 Intercalation synthesis, 697 Interdiffusion, 471, 572 Interface modes, 500 Interface roughness, 197 251,

263, 285, 456, 488, 644 Interface states, 576 Interfacial energy, 561 Interionic potentials, 721 Intermolecular conduction, 760 Intersubband excitations, 36 Intersubband relaxation

scattering, 324 time, 324

Intersubband scattering, 317 Intersubband transitions, 12,

143

Intervalley scattering, 189, 191, 203, 664

Intrasubband excitations, 36 Intrasubband transition, 12 Intralayer forces, 679 Inversion layer, 252 Iodination, 772 Ionic conductor, 690 Ionization lifetime, 110 Ionized donors, 387 Ionized impurity scattering,

263 Island nucleation

three-dimensional, 451 Isotopic separation, 704

JFET, 613

k.p model, 145, 202 Kane model, 510, 544, 584 Knowledge-generating systems,

814 Kosterlitz-Thouless phase

transition, 59 Kramer's degeneracy, 74 Kronig-Penney model, 74, 585

Lamellar structure, 695 Lanczos (recursion) method, 223 Landau damping, 15, 38, 280 Landau level, 7, 53, 85, 99,

204, 296, 343, 594, 762 fan, 206, 308

Landau quantum numbers, 525 Landau splitting, 168 Landauer formula, 269, 370 Langmuir-Blodgett films, 784,

795 Lasers

broad area, 608 GRINSCH, 604, 614 quantum well, 74, 579, 623

strained, 405, 653 semiconductor, 52

Lattice matching, 146 Lattice mismatch, 471, 495,

509, 533 Layered cathode, 691 Layered structure, 776 LEED, 473 Level splitting, 526 Lewis acids, 697 Lifetime broadening, 66, 361 Light scattering

inelastic, 3 Liquid phase epitaxy, 435, 607 Lithography, 124

electron beam, 336, 349 Local density approximation,

201 Localization, 7 ,574, 680

827

energies, 182 phenomena, 283

Long chain compounds, 771 Luminescence excitation, 5

spectra, 57 Luminescence, 85, 116

intensity, 61 Luttinger Hamiltonian, 220, 625 Luttinger parameters, 544, 586

Macroscopic strain effects, 430 Magnetic depopulation, 342 Magnetic polaron, 175 Magnetic quantum limit, 8 Magnetic susceptibility, 713,

736 Magnetoabsorption, 98 Magnetocapacitance, 293 Magnetoconductance, 293 Magnetodispersion, 135 Magnetoexcitation spectra, 79,

88 Magnetoluminescence, 52 Magnetooptical measurements,

149, 208 Magnetooptics, 133 Magnetoreflectiv'ity, 204 Magnetoresistance, 6, 147, 357,

763 negative, 237

Magnetoroton minimum, 18 Magnetotransmission, 99, 210 Many-body effects, 70 Many-particle interactions, 4 Mass anisotropy, 204 Matthiessen's rule, 267 Maxwell-Garnett theory, 418 MESFET, 242, 613 Metal-insulator transition,

285, 295, 388 Metastable alloys, 441 Microelectronic devices, 638 Microscopic strain energy, 435 Microwave performance, 145 Migration enhanced epitaxy,

404, . 449, 535 Miniband, 309, 518

dispersion, 210 MISFET, 613 Misfit defects, 474 Misfit dislocations, 562 Mismatch dislocations, 438 Mismatch epitaxy, 141 Misoriented substrates, 645 Mixed valence compounds, 771 Mixed valency, 729 Metalorganic chemical vapor

deposition, 119, 409, 435, 527, 579, 614

flow modulation, 141 MODFET, 404, 580

828

strained, 664 Modulation doping, 4, 36, 317,

347, Molecular beam epitaxy, 73,

104, 124, 147, 166, 191, 241,247,318,402,435, 472, 512, 548, 579, 628, 636, 669 ~

atomic layer, 535 modulated, 534

Molecular electronics, 776, 779, 805

Molecular field approximation, 105

Molecular intercalation compounds, 716

Molecular orbital calculations, 788

Molecular wire, 782 Monomolecular layers, 807 MOS structures, 283, 328 MOSFET, 242, 247 Multi-sandwich structure, 678 Multiple scattering, 285

n-i-p-i structures, 141 n-p-n bipolar transistors, 623 Narrow channel, 335 Narrow constrictions, 262 Narrow-gap semiconductors, 141 Nonlinear optical coefficients,

798 Nonohmic scattering, 236 Nonradiative processes, 125,

610 Nonradiative recombination, 187 Nonstoichiometry, 729 Nontetragonal distortion, 467

Octahedral coordination, 679 Off-oriented substrates, 453 Ohm's law, 235 Onsager problem, 802 Optical absorption, 5 Optical anisotropy, 417 Optical emission, 5 Optical gain, 626 Optical matrix element, 573 Optical modulators, 120, 641 Optical nonlinearity, 141 Optical switches, 620 Optoelectronic circuits, 623

integrated, 613 Optoelectronic devices, 73,

437, 638 optoelectronics, 141 Order-disorder transition, 565 Order-disorder reactions, 720 Ordering, 442 Organic molecules, 686 organic rectifiers, 780

Oscillator strength, 55, 95, 124,185,221,226,319

Out-of-plane percolation, 775

Pauli-blocking, 58 Peierls gap, 799 Persistent photoconductivity,

48 Phase separation, 143 Phase-change switch, 780 Phonon

dispersion, 477, 504 drag, 331 emission, 328 replica, 186

Phonons, hot, 62 Photoabsorption, 217 Photocreated carriers, 95 Photodiodes, 407 Photoemission, 153 Photoinduced electron pump, 809 Photoluminescence 9, 28,63, 73,

123,126,141,152,168, 181, 193, 300, 509, 533, 643

excitation spectroscopy, 74, 86, 116, 217, 509

time resolved, 171 Photon funnel, 809 Photoreflectance spectroscopy,

547 Piezoelectric effect, 263 Piezoelectric interaction, 333 Piezoelectric scattering, 63 Piezoelectricity, 116 Piezoreflectance, 427 Plasmon, 35

excitations, 288 dispersion, 37

Polarization dependence, 135 Polarons, 800 Pseudomorphic growth, 146, 527 Pseudopotential, 201, 558, 570,

629 Pump and probe experiments, 194

Quantized conductance, 350, 387 Quantum ballistic transport,

341, 387 Quantum confined Stark effect,

112 Quantum confinement, 109, 132,

154 Quantum dots, 109, 124 Quantum efficiency, 609, 625,

632 Quantum oscillations, 339 Quantum phase coherence, 275 Quantum point contacts, 336,

349, 371 Quantum size effect, 40, 580

Quantum wells, 3, 36, 57, 73, 109, 124, 146, 167,

181, 201, 217, 293, 318, 513, 533, 549, 637, 644

strained layer, 523, 599 Quantum wire 36, 109, 123, 347,

369, 387 Quasi-confined modes, 487, 497 Quasi-electrons, 27 Quasi-holes, 27 Quasi-particle spin, 753

Raman scattering, 35, 167 micro-, 37 resonantly enhanced, 317

Raman spectroscopy, 476, 481, 495, 538

Random-phase approximation, 16, 35

Random telegraph noise, 347 Rapid thermal anneal, 671 RBS channeling, 467 Recombination, 8, 34, 86 Reflectance difference

spectroscopy, 410 Residual impurities, 150, 284 Resistance quantization, 239,

359 Resonant enhancement, 21, 36,

124 Resonant structure, 364 Resonant tunneling, 293, 317,

381, 640 structures, 181

RHEED, 534 oscillations, 403 pattern, 451

Rigid band approximation, 681 Ring oscillator, 650 Roton structure, 18

Saw-tooth potential, 159 Scanning tunneling microscope,

382, 779 Scattering time, 192, 283 Schottky barriers, 635 Screening, 31, 58

charge, 12 Segregation, 471 Selective optical excitation,

87 Self-aligned devices, 650 Self-assembling monolayers, 784 Self-consistent potential, 392 Self-organization, 804 Semi-amphiphilic salts, 772 Shallow levels, 660 Sheet carrier density, 46 Shubnikov-de Haas oscillations,

36, 142, 249, 343, 523 Singlet-triplet mixing, 751

829

Size quantization, 87 Solid state batteries, 689 Solid state reaction, 710 Soliton transport, 811 Space charge, 300 Spectral lineshape, 66 Spin-density excitations, 13 Spin-density wave, 762 Spin-exchange interaction, 174 Spin flip, 85

scattering, 170 Spin-glass order, 177 Spin-orbit splitting, 581 Spin relaxation, 82, 86 Split gate, 240

FET, 347 structure, 362, 378

SQUID, 689 stacking faults, 450 Stacking sequence, 683 Stark effect, 52

modulators, 407 stimulated emission, 601 Stokes shift, 79, 168 strain

anisotropy, 427 distributions, 495 energy, 403 relaxation, 450, 670 release, 461

nonbiaxial, 467 tensor, 581, 655

Streak camera, 63 Stress uniaxial, 184 Stressor, 114 Structural anisotropy, 679 SU-Schrieffer-Heeger

Hamiltonian, 799 Superconducting tunnel

junctions, 327 Superconductivity, 702, 711,

729 high Te, 743 two-dimensional, 686

Superconductors organic, 759 oxide, 678

Superlattices, 97, 123, 167, 192, 201, 217, 308, 411, 449, 481, 495, 512, 557, 569, 579, 645

lateral, 131 mini-band, 169, 206 p-i-n, 207 short period, 181, 533, strained layer, 141, 208,

435, 535, 561, 580, 628, 637

short period, 476 vacancy, 724

Supramolecular engineering, 808

830

Surface migration, 536 Surface polaritons, 126 Surface roughness, 414 Switching defect, 357

t-J model, 749 Thermal annealing, 455, 538,

734 Thermal budget, 242, Thermal expansion coefficients,

457 Thermal oxidation, 241 Thermal quenching, 311 Threading dislocations, 450 Threshold current, 120, 639,

665 density, 605

Threshold voltage, 296 Tight binding, 201, 749 Tilted magnetic field, 529 Time-window technique, 181 Transconductance, 614, 640, 650 Transfer matrix method, 375 Transition metal coordination

complexes, 760 Transition rate, 597 Transmission electron

microscopy, 252, 540 Transmission resonances, 516 Tunneling, 191

coherent transport, 307 inter-well, 217

Two-dimensional subbands, 3 Two-terminal resistance, 351

Uniaxial strain, 653 Uniaxial stress, 510 Unimolecular rectifier, 779

Valence band mixing, 220 Vapor levitation epitaxy, 116 Velocity saturation, 242 Vertical superlattices, 120 Vicinal substrates, 116 Virtual crystal approximation,

548 Voigt geometry, 100 Volmer-Weber growth, 439

wannier exciton, 109 Wannier state, 751 Waveguide modulators, 617 Wet oxidation, 257 Wide-narrow-wide geometry, 272,

363

X-ray diffraction, 538, 614

Zeeman splitting, 77, 85, 168 Zone folding, 201, 567, 572 Zwitterionic state, 781