1

Diamond-Graphite-Diamond Heterostructures Produced by Implantation and HPHT Annealing

for Lift-off Transfer and New Devices

V.P. Popov, V.A. Antonov, S.N. Podlesny, M.A. Ilnitskii, A.K.Gutakovskii,

I.N. Kupriyanov, Yu.N. Pal’yanov

Tomsk 2017

Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia

Sobolev Institute of Geology and Mineralogy, Novosibirsk, Russia

Ec, dia = 107 V∙cm-1

A. Lohrmann,1 S. Pezzagna,1 I. Dobrinets et al. Appl.Phys.Lett. 99, 251106 (2011)

Maximal breakdown voltage and mobility vs. doping

2

Band alignment and resistivity of diamond and graphite

J. Robertson, phys. stat. sol. (a) 205, No. 9 (2008)

gra-C

[1] A. Reznik et al., Phys. Rev. B 56 (1997) 7930.

3

4

Normally-Off MISFET & MESFET: 10mA/mm

Normally-Off MOSFET: low current at VGS < 3 V !

Motivation

T.Matsumoto et al. Sci. Rep. 6 (2016) 31585

Hirama K.et al. JJAP 51 (2012) 090112

Normally-On MESFET: Ion= 1300mA/mm

H-transfer doped -doped

Partial C-O channel MESFET

Y Kitabayashi et al. IEEE EDL, 38 (2017) 363

10A/mm at 3.0 V

Inversion channel MISFET

5 5±1 nm

Status of diamond relative to DiVincenzo criteria for Quantum Information

Processing (QIP):

D. DiVincenzo “Quantum bits: Better than excellent” Nature Mat. 9, 468–469 (2010) .

TD = 1860 K

63

7 n

m

Diamond as a coolest material for Quantum Information Processing

Simple read by CCD matrix…

5

…but it is still not implemented !

P. Hemmer, J. Wrachtrup, F. Jelezko et al. “Diamonds for scalable quantum information systems” SPIE Nanotech. 2007

Joerg Wrachtrup “Defect center room-temperature quantum processors”, Proc. Natl. Acad. Sci. USA 107, 9479 (2010).

,

Write line

1. Motivation for Diamond Electronics

2. Diamond-Graphite-Diamond by II & Lift-off Process

3. Diamond Junction & Field Effect Transistors (J- & FET’s)

4. Sensing by Membranes & NV Defects in Nanostructures

5. Conclusion

Outlook

6

{111} Ib type crystal (left) and {100} (right) with the area up to 40 mm2 was grown using (111) seed orientation for 3-4 carat size

200-400 m plates of {111} plates with the area up to 25 mm2 were produced by laser pointing with subsequent cleavage along the plane of the spikes, grinding & polishing or CVD overgrowth. .

Doped by B or N (1.0-100 ppm) and undoped (

Is injection implantation at. V >50 kV reasonable for multiple cut? 2:1 Relation in the flux between protons and molecular ions is needed. ESR source allows making this!

Proton and Molecular Ion Range (SRIM) & Peak Position (SIMS) How cut diamond on the slices by ion injector?

V.P. Popov et al. NIM B 406 (2017) 634–637 8

Defect profiles & graphitization after H+II + HPHT

Nitrogen 130 keV Hydrogen mol. 60 keV

322 /10 cmVacNcrit

314 /10*5 cmNDcrit

Graphitization :

32

16 /10*5 cmHDcrit

Swelling: TNgr>TNam>TNcrit is due to 10-40% lower density in innner layer.

Rpexp=130-1500 nm

40

nm

gra

ph

ite

140 nm

graphite layer

9

The pressure p0 in blister (radius R, thickness of cup layer h) as a function of the maximum deflection δ is [*]:

[ 1 ] p0 is outer pressure. Ē = E/(1-2) is biaxial elastic modulus with plane-strain modulus.

E = 175±5 GPa Young's modulus to [111] direction. Poisson ratio = 0.1 [**]:

10 The estimation of internal pressure using diamond mechanical properties

,

* C. Coupeau et al. Appl. Phys. Lett. 103 (2013) 031908 ** V.Blank, et al. Diam. and Relat. Mater. 8 (1999) 1531.

For HPHT with h = 0.25 m, R = 0.5 m, δ = 0.006 m: p = 7.0 GPa

For VPHT with h = 0.25 m, R = 0. 5 m, δ = 0.03 m: p = 7.0 GPa,

HPHT 5 GPa

VPHT H2

+ fluence Ф = 8x1016 см-2

Young's modulus to [0001] graphite is equal to E = 32.5 GPa and = 0.3 : p = 1.6 GPa,

10

TEM/HREM planar view: diamond & graphite layers after H2+II & HPHT

Glassy-C layer with thickness 100÷120 nm with vertical graphite nanolamellas inside with

interplanar spacing d = 0.35 nm

Dark field TEM of upper d-C layer (30÷50nm) with 12 diffraction spots due to nd-C twinning by 30o rotation along direction leading to combination of cubic (d-C) and hexagonal (2H) diamond or grains

D

D

D

P.Nemeth et al. srep18381 11

Very rare defect region Typical structure of glassy carbon layer

C A Graphite

3.3 Å

Growth

С A

(121)

2.06 Å

(111)

Carbon

Graphane carbon

Hydrogen

С A С A

Diamond

Diamond (111)

GL-C:H \ \ I / I \ = / Diamond

After HPHT

After VPHT

Diamond (111)

GL-C:H I==I || |=====/ I

Diamond (112)+ ? ? ?

B A

Planar view

C

A

B

Bernal graphite on

(121) microtwin

*W. R. L. Lambrecht et al., Nature 364, (1993) 607-610

2:3 diamond growth model* – 3:2 graphite growth model for vertical planes

First model for growth of graphite on (110) planes of diamond

(11

0)

12

SAED, XTEM and FFT, HRTEM of HPHT annealed Ib (111) diamond

50 keV hydrogen molecule fluence Ф = 4x1016 см-2 after HPHT annealing at 1200oC 4 GPa 4 h

17.3o

Graphite (nm): 0.335(111), 0.213(100),

Tetragonal distortion: d111 = 0.354 nm, d100 = 0.204 nm with 72.7o between and

directions suggests mixed Bernal/rhombohedral graphene sheet package 13

0.206 nm

0.206 nm

0.206 nm

0.204 nm

0.354 nm

From diamond

1/1 graphite growth model corresponds to the experimental angle ~17o and shows increased distances between carbon atoms and graphene planes

A

В

С

A

В

С

A

C A

Graphite

3.5 – 3.8 Å

Growth

(111)

2.06 Å

(111)

Carbon

Interphase carbon

Hydrogen

Diamond

B A

Planer view

C

A

B

(0001) rhombohedral graphite

on H-(111)-planes

73.0o

2.19 Å

2.16 Å

70.5o

*V.P. Popov et al. AIP Conf. Proceed., 2012

Diamond (111)

GL-C:H \ \ I / I \ = /

Diamond

After HPHT

After VPHT

Diamond (111)

GL-C:H I==I || =====/ I

Diamond (112)+ ? ? ? ? ?

Second model for growth of graphite on (111) planes of diamond

14

Hydrogen molecules (H2+),

50 keV, (1÷13)x1017 cm-2 + Nitrogen (N+), 120 keV, 3.5x1016 cm-2 (through Al-mask for contacts) HPHT treat.: P=4÷8 GPa T=1200÷1600oC, 4 h (BARS) VPHT: P=10-3 Pa

*J.K.Lee Phys. Rev. B 83, 165423. 2011

Theoretic bigraphane interpla- nar distance* ~0.45÷0.50 nm

HPHT VPHT

HREM micrograph of buried layer and Raman spectra after H2+II & HPHT

V.P. Popov, V.I. Popok, Yu.N. Palyanov, I.N. Kupriyanov. . EMRS-2011, Nice, France

0.45 nm

Nanographane? graphite and glassy-C layers or twisted AA’?

0.22 nm

15

J-K Lee, Scie. Rep. DOI: 10.1038/srep39624

1019cm-3

1018cm-3

a)

c)

550 600 650 700 750

0,0

5,0x103

1,0x104

1,5x104

2,0x104

2,5x104

3,0x104

Inte

nsity,

arb

. units

Ram

an

638 n

m (

NV

- )

575 n

m (

NV

0)

Wavelength, nm

16 Graphite H-C Diamond Graphite H-C Diamond

C

Applications for DGD-heterostructures

Amplifying of NV-centers PL in d-C Ib by E-field

V.P. Popov et al. Int. J. Nanotechnol., 12, 226 , 2015. 16 -40 -20 0 20 40

10-1

100

101

102

103

Sample B10

N+, 50 keV, 4*10

17 cm

-2

CN - d-C(B)

Vd-C(B)

- COM

VCN

- Changeable

Point 1

CN - CN

CN - d-C(B)

Vd-C(B)

- COM

VCN

- Changeable

Point 2

I DS, m

kA

UDS

, V

CN-heterojunctions

CN

Test structures for conductivity

Hydrogen implantation for buried conductor

standard lithography with Al masks

Nitrogen implantation for contact pads

Al etching + thermal annealing

0 200 400 600 800 1000 1200

102

103

104

105

106

107

DC-1, ILN E=120 keV,

VPHT, 1h

D (N), 1016

cm-2:

- 1

- 4

- 7

Rs, O

hm

/sq.

T, oC

Hydrogen molecules (H2+),

50 keV, (1÷13)x1016 cm-2

+ Nitrogen (N+), 130 keV, 3.5x1016 cm-2 (through Al-mask for contacts)

VPHT treat.: P=10-3 Pa HPHT treat.: P=4÷8 GPa T=1200÷1600oC, 4 h FIB litography +

17

Quantum correction* due to e-e interaction in diffusion channel:

σ (T) = σ(0) + σe-e(T) = σ (0)+β∙T1/3

Variable range hopping mechanism of conductivity S(T)=S0*T-1/2*exp [-(T0/T)1/4] T0=16/a3*k*N(EF) a – radius of hopping site sp2 bond – a=1.2 nm

When conductivity becomes metallic? Reznik et al. This happens when density of states N(EF) reaches the value N0(EF) determined by the relation N0(EF) *a

3=1, i.e. N0(EF) =1/a

3=6x1020 states/(eV*cm3) for a=1.2 nm

If there is σ (0)0 then the conductivity is quasimetallic after 1200oC or above MIT. 18

Semimetallic mechanism of conductivity

240 & 32 nm membrane from diamond-graphite-diamond (DGD) heterostructures produced by N+ & H2

+ II .

Absorption bands at UV 100 and 300 nm indicate a presence of graphite inclusions after

1600oC, 19 *V.P. Popov et al. AIP Conf. Proceed., 2012

0 200 400 600 800 1000 1200 1400

0,0

0,2

0,4

0,6

0,8

1,0

wavelenth, nm

Inte

nsity,

arb

. un.

Film T

Bulk R

Bulk T

0 200 400 600 800 10000

2

4

6

8

10

wavelenth, nm

Inte

nsity,

arb

. units

Bulk Reflection

Bulk Transmission

800 1000 1200 1400 1600 1800 2000

100

1000

10000

1596

cm-1 (G

-ban

d)

1333

cm-1 (D

iam

ond)

1327

cm-1 (M

embr

ane)

FWHM = 12 cm-1

FWHM = 3 cm-1

Diamond membrane

Laser 325 nm

Raman shift, cm-1

Inte

nsity,

arb

. un.

Initial diamond

270 nm membrane

1100 1200 1300 1400 1500 1600 1700 1800

200

400

600

800

1000

12001400

Laser 514.5 nm

FWHM = 4.2 cm-1

FWHM = 5.2 cm-1

1329

cm-1 (M

embr

ane)

1333

cm-1 (D

iam

ond)

Raman shift, cm-1

1594

cm-1 (G

*-ba

nd)

1355

cm-1 (D

-ban

d)

Inte

nsity,

arb

. u

nits

bulk as H2

+ implanted

initial

270 nm membrane

240 nm membranes from diamond-graphite-diamond heterostructures produced by (N+ + H2

+)II + HPHT + Anodic Etching

No other PL lines at laser excitation at ex 514.5 nm after 1600oC, only small G*-line and four times larger FWHM for UV RS due to residual stresses*

20

600 800 1000 1200 1400 1600

0,4

0,6

0,8

1

1,2

Laser 785 nm

Raman shift, cm-1

Inte

nsity

, arb

. un.

495

After 1200oC 5 GPa

0.243мм

240nm

1500 1596

14241280

935703

1003

Tareeva, et al. Bull. Lebedev Phys. Inst. 44 (2017) 210 V.P. Popov et al. Int. J. Nanotechnol., 12, 226 , 2015.

Hydrogen molecule fluence Ф =8x1016 см-2 after HPHT annealing at 1200oC 1h

Bonding of diamond 30 nm film to PMMA or glass substrate

21

. UV10

. UV11

. UV12

.UV2

. UV4

. UV3

. UV6

UV7 .

UV8,9 .

.

UV

5

HII: H2+ 50 keV, 8x1016 cm-2,

HPHT, 1200oC, 5GPa 2h, AO of 110 nm Gl-C and transfer of 290 nm

diamond on PMMA substrate (delamination by residual stress in diamond membrane)

AO after Bonding to PMMA

Diamond Membrane

300 nm

on PMMA

4 mm

8 m

m

21

1. Motivation for Diamond Electronics

2. Diamond-Graphite-Diamond by II & Lift-off Process

3. Diamond Junction & Field Effect Transistors J-, MISFET

4. Sensing by Membranes & NV Defects in Nanostructures

5. Conclusion

Outlook

22

-10 -5 0 5 1010

-12

10-11

10-10

10-9

10-8

10-7

10-6

10-5

- 1 n1/p

- 2

- 3

- 4

- 5 n2/p

n/p (in/out of pad)

I, A

V, Volt

Diamond vs. Silicon p-n Junctions

I-V characteristics of equally doped p-n junctions at RT simulated by TCAD Synopsys

silicon

diamond

-10 -5 0 5 10

V, Volt

I, A

100

10-10

10-20

10-14

10-4

Measured I-V characteristics of p-n

mesa junctions at RT after 1200oC 4 GPa

23

Electron Density at -1 nm

Design of Diamond Hetero or Schottki Barrier n-MISFET

Diamond body. The drain and source are made from Al,Pt Schottki or n+-type

(1019cm-2) silicon carbide Hetero Barrier and located at the edges of the

diamond body (in one plane):

•Full length of the transistor is 200 nm. •The length of the gate is 100 nm. •The length of the channel is 104 нм. •The length of drain & source is 20 nm. •The thickness of diamond layer is 20 nm. •The thickness of the gate oxide is 2 нм. •Top aluminum (Al) gate. •The back oxide thickness is 20 nm on Al plate.

24

Electron Density in Diamond FETs with Schottki Barriers

Vg=-2 V Vg= 0 V

-10 -8 -6 -4 -2 0 2 4 6 8 10

1E-18

1E-17

1E-16

1E-15

1E-14

1E-13

1E-12

1E-11

1E-10

1E-9

1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

nMOS

Usub=Us=0

Ud=+0.1V

SD WorkFunction[eV]:

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

pMOS

Usub=Us=0

Ud=-0.1V

SD WorkFunction[eV]:

7.4

7.2

7.0

6.8

6.6

6.4

6.2

6.0

5.8

pMOS nMOSeBarrierTunneling (PeltierHeat)

hBarrierTunneling (PeltierHeat)

Hydrodynamic Model (eTemperature)

Hydrodynamic Model (hTemperature)

Lattice Temperature: 500K

I ds, A

/um

Ugate

, V

I-V characteristics of SB MISFET at RT simulated by TCAD Synopsys

No large difference in SB MISFET for four different parameter sets by TCAD Synopsys

Ion = 10mA/mm: E-1.8 eV for SB p-MISFET at Vg>+2 V 25

-0.08 -0.06 -0.04 -0.02 0.00 0.02 0.04 0.06 0.08

10-4

10-3

10-2

10-1

100

101

102

103

eBarrierTunneling

n-SD 1e19cm-3

T=500K

Vg=+6V

Usub=Us=0

Ud=0.2V

Ud=0.1V

SiC SiCC(Diamond)

ab

s(E

lectr

on

Cu

rre

nt D

en

sity),

A/c

m2

X, um

-0.08 -0.06 -0.04 -0.02 0.00 0.02 0.04 0.06 0.08

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

ConductionBandEnergy

eQuasiFermiEnergy

hQuasiFermiEnergy

ValenceBandEnergy

eBarrierTunneling

n-SD 1e19cm-3

T=500K

Vg=+6V

Usub=Us=0

Ud=0.1V

Ud=0.2V

SiC SiCC(Diamond)

En

erg

y, e

V

X, um

Bottom of conduction band

E-Bands & Current Density in Diamond Hetero n-MISFET

and Electron Density at +1 nm under the surface

26

0 1 2 3 4 5 6 7 8 9

1E-25

1E-24

1E-23

1E-22

1E-21

1E-20

1E-19

1E-18

1E-17

1E-16

1E-15

1E-14

1E-13

1E-12

1E-11

1E-10

1E-9

1E-8

1E-7

1E-6

1E-5

eBarrierTunneling (Source & Drain)

Max Length for Tunneling: 17nm

Electron Effective Mass for Tunneling:

mt=0.1me

mt=0.2me

mt=0.5me

mt=1.0me

noTunneling

I ds, A

/um

Ugate

, V

nMOS

SiC-C-SiC

Gate Length 100nm

Channel Length 104nm

n-SD Length 20nm

Base Thickness 20nm

Top Oxide Thickness 2nm

BOX Thickness 20nm

Top/Sub Gate: Al

Usub=Us=0, Ud=0.1V

n-SD 1e19cm-3

Temperature 500K

Matsumoto, T. et al. Sci. Rep. 6 (2016) 31585

Ids = 1-100 mA/mm at 500oC in dependence on the mt under the barrier

Heterobarrier n-MISFET vs. inversion channel p-MOSFET

27

Vg=8V: 20 A/mm

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

1E-25

1E-24

1E-23

1E-22

1E-21

1E-20

1E-19

1E-18

1E-17

1E-16

1E-15

1E-14

1E-13

1E-12

1E-11

1E-10

1E-9

1E-8

1E-7

n-SD 1e19cm-3

eBarrierTunneling (PeltierHeat)

Hydrodynamic Model (eTemperature)

Lattice Temperature: 500K

Usub=Us=0

Ud:

1.0V

0.5V

0.3V

0.2V

0.1V

I ds, A

/um

Ugate

, V

28

Vg=6V: 5 A/mm

Heterobarrier n-MISFET vs. inversion channel p-MOSFET

Ids = 100 mA/mm at 500oC But we need to account correctly the

dependence = (E) Matsumoto, T. et al. Sci. Rep. 6 (2016) 31585

Heterobarrier p-JFET with n-type g-C3N4 mesh

-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0

1E-17

1E-16

1E-15

1E-14

1E-13

1E-12

1E-11

1E-10

1E-9

1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

0.01

I dra

in, I s

ourc

e, I g

ate, A

/um

Ugate

, V

Usource

=0, Udrain

=-0.1V

Currents:

Isource

Idrain

Igate

SiC n-Mesh Doping:

P-1e17-1e19

C p-Base Doping:

B1e19

B5e18

B2e18

B1e18

B5e17

B2e17

B1e17

Vg=-3V: 50A/mm vs. 50mA/mm at 500K

29 *Iwasaki T. et al. JEDS 5 (2016) 2624301

CN-heterojunctions with Ioff/Ion ~ 10-3

1. Motivation for Diamond Electronics

2. Diamond-Graphite-Diamond by II & Lift-off Process

3. Diamond Junction & Field Effect Transistors (J- & FET’s)

4. Sensing by Membranes & NV Defects in Nanostructures

5. Conclusion

Outlook

30

Diamond & Multigraphene Membranes as Silicon FET gate

I-V characteristics of membrane gated FET with three gate lengths simulated by TCAD Synopsys

31 V Popov. et al. Proceed. of ICMNE-2016 Int. Conf., Moscow, 2 (2015) 149

V

V - diamond

Ep-n = 103 V∙cm-1

δ1,2: ~ 600, 400 GHz

32

NV- centers in embedded vertical p-n junctions Stark Effect at NV-centers in forward biased p-i-n diode

E dia = 106 V∙cm-1

late

ral p-

n ju

nction

Exciton luminescence (VFB=35 V)

ENV0/- = EC-2.58 eV

Inte

nsi

ty, a

rb.u

n

Wavelength shift , arb. un

Ep-n = 106 V∙cm-1

Splitting in Stark shift for 2 NV- groups

The splitting allows to control of the spins in differently oriented NV- groups along axes

V Popov. et al. Proceed. of ISI-2015 Int. Conf., Moscow, 2 (2015) 13-19

***T.Karin, et al. Appl. Phys. Lett. 105, 053106 (2014).

*T. Yamamoto et al. Phys. Rev. B 90, 081117(R) (2014).

**N.Bar-Gill et al. Nat. Commun. 4:1743 (2013).

If transverse spin-relaxation time T2

* is:

T2* = 1/(δ) = 52 ns

Spin-relaxation time T due to dipolar coupling is:

TNV 1/[(gsB)2nNV ] = 700 ns

TNV 1/[(gsB)2nNs ] = 200 ns

T is limited by high nNs

Highest TNV ~500 ms for nNs =1015cm-3**:

TNV 1/[(gsB)2nNV ] = 1 s

TNV 1/[(gsB)2nNs ] = 130 ms

No hyperfine splitting* for NII:

(3.1 MHz)/(9.5 MHz) -> δ = 6.3 MHz

Δ =151MHz Δ =62MHz Δ =60MHz Δ = 152MHz

D =2870 MHz

45% of the NV’s are to the surface***

33

ODMR of NV’s in 300 nm N+ implanted layer at high temperature

H = D [SZ2 – S(S+1)/3] + [B + b(t)]S + E(SX

2 – SY2),

V Popov. et al. Proceed. of ISI-2015 Int. Conf., Moscow, 2 (2015) 13-19.

Magnetic dipole coupled spin arrays

T2 limit

323md ~

1~ Tdd

E

On-Crystal Quantum Network from M. Lukin group. P.R.L. 110 (2013) 067601

Error in collectively enhanced quantum gates

= 1 − exp[−(4t/T2* )3]

For = 10 -4 T2*= 11 ms

34

35

The probability to find analogical or other charged centers with content [CNs] = 2.5x1013 cm-3 in neighborhood of 10 nm layer on the distance r and determines as exp(-[CNs]R^2) = 1/2.

Then the distance R is equal to R ≈ 0.47([C])-1/2 = 1x10-6 cm =10 nm

V.P. Popov, et al. . ICW-2010, Kyoto 2010

PL Peaks of NV ensembles in Ar27 Cluster Ion Implanted Diamond

630 632 634 636 638 640 642 644

100

150

200

250

300

350

NV-

637.2 nm

Inte

nsity,

arb

. un.

Wavelength, nm

No5

Laser 532.1 nm

-192.1 oC

tcount

= 10 sec

Point 1

Point 1_double

Point 2

574 576 578 580 582 584 586 588

100

150

200

250

300

350

NV0

575.0 nm

Inte

nsity,

arb

. u

n.

Wavelength, nm

No5

Laser 532.1 nm

-192.1 oC

tcount

= 10 sec

Point 1

Point 1_double

Point 2

Visible PL at 575 and 637 nm of NV0 & NV- with content [CNV] = 5x1013 cm-3 at LNT

.

FWHM of NV- is δ=170 GHz or 230+10 pm instead of δ=30 GHz for single NV- .

NV’s mainly in clusters!

FWHM for 0.2-20ppm NV’s is the same for bulk, HNI & HII diamond

36

The probability to find analogical or other charged centers with content [C] = 2.5x1013 cm-2 in neighborhood on the distance r and determines as exp(-[C]R^2) = 1/2.

Then the distance R is equal to R ≈ 0.47([C])-1/2 = 1x10-6 cm =10 nm (anneal. 850oC)

V.P. Popov, et al. . ICW-2010, Kyoto 2010

425m

425m

PL CLM of NV ensembles in Ar27 Cluster Ion Implanted Diamond

NV- ensemble spots with area content [CNV]s = 3x106 cm-2 or 1/300 of [NCl] !

.

Average distance R is equal to R ≈ 0.47([CNV])-1/2 = 1.6 x10-4 cm = 1.6 m at RT

010

20

30

40

50

2,0x103

4,0x103

6,0x103

8,0x103

1,0x104

0

10

20

30

40

50

Y/1

0, nmX/10, nm

NNV’s: 1 2 3 4 5 … 10

Number of NV centers в in spice - 25 50 100 150 200 …

37

Solid State Lenses with One NV Ensemble made by Ga+ FIB

V.P. Popov et al. RFTT-2015 Conf. Proceed., 2015, 147

5x increase in NV- PL intensity, but we need a regular matrix !

532 nm green laser beam with 300 nm in diameter

570 580 590 600 610 620 630 640 650

104

2x104

3x104

Inte

nsity,

arb

. u

n.

Wavelength, nm

solid lens

planar NV-

637 nm

PL increasing for solid state lenses due to a suppression of inner reflection

But what is the influence of FIB induced defects ?

[CNV]s = 3x106 cm-2 than average content in lens is = 50 pcs.

ODMR of NV’s (~50 pcs) in H+II & annealed pillars of 300 nm in the height

2780 2800 2820 2840 2860 2880 2900 2920 2940 2960

105000

110000

115000

120000

125000

ph

oto

n c

ou

ntin

g

frequency of the microwave Mhz

0G

3,26G

4,8G

6,44G

8,7G

10,81G

12,86G

2780 2800 2820 2840 2860 2880 2900 2920 2940 2960

96000

98000

100000

102000

104000

106000

108000

110000

112000

114000

ph

oto

n c

ou

ntin

g

frequency of the microwave Mhz

0G

3,26G

4,8G

6,44G

8,76G

12,86G

NG2 -5dbm s 2,5mm

For H+II only strain splitting is observed:

(3.1 MHz)/(6.3 MHz) -> δ = 3.2 MHz

If transverse spin relaxation time T2* is:

T2* = 1/(δ) = 100 ns

Spin-relaxation time T due to dipolar coupling:

TNV 1/[(gsB)2nNV ] = 3.5 s

TNV 1/[(gsB)2nNs ] = 140 ns

T is limited by high nNs !

E= 6.3 MHz corresponds to the strain = +1.5%

38

~50 pcs

Stimulated spin echo for T2 measurements by MW pulse ODMR at constant laser excitation beam

2830 2840 2850 2860 2870 2880 2890 2900 2910

2645000

2650000

2655000

2660000

2665000

2670000

2675000

2680000

ph

oto

n c

ou

ntin

g

frequency of the microwave Mhz

0 pulse

3 pulse

4 pulse

Ry1

MW spin echo

sequence 1-2 us

30% decrease in ODMR dip after 5 s means

T2 value ~ 12 µs 39

MW

pu

lse

s C

ou

nts

on

3

pu

lse

C

ou

nts

on

4

pu

lse

Constant Laser Power

..............................

/2

1. Hydrogen implantation with fluences Ф > 1017 cm-2 and HPHT

annealing provide the buried conductive layer of mixed graphite

forms with the resistivity < 10-3 Ohm·cm inside the diamond

2. Lift-off technique allows forming free and transferred membranes

of diamonds as thin as 30 nm that are prospective for thin film

vertical JFETs with a saturation current Ion= 50 mA/mm

3. The results for Schottki Barrier MISFET simulation using SB

source-drain contacts show Ion as high as 100 mA/mm for

optimized SB metals, or ~10 times higher than in normally-off

MESFETs with H-transfer doping.

4. Hetero Barrier n-MISFET simulation with CN S-D regions shows

the Ion as high as 100 mA/mm for optimized S-D doping or about

~100 times higher than in inversion channel n-MOSFETs but Ion depends strongly on effective mass of carriers under the barrier

Conclusion

40

1. Suspended diamond membranes as a gate of silicon FETs service as a highly sensitive sensors of displacements in the nanoscale range

2. NV-centers at the concentration 0.2-20 ppm in 30-300 nm layers and membranes have practically the same spectral characteristics as in the bulk diamond crystals

3. Charge state and ZPL position of NV-centers are effectively controlled by inner electric fields in p-n junction

4. NV center relaxation and spin coherence times are determined mainly by the interaction with nearest nitrogen donors and should be increased for QIP

5. NV matrices are the promising candidate for magnetic, electric, and spin nanoscopy and NMR spectroscopy with nanoscale resolution

Conclusion

41

to the colleagues from the Institutes of Semiconductor Physics, Geology and Mineralogy of SB RAS and Melbourne University :

Dr. L.N.Safronov for p-n & JFET fabrication,

Dr. A.A.Kalinin for HPHT treatment,

Dr. S. Rubanov for SEM analysis.

Our thanks

Thank Your for Attention!

42