development of silicon sensors for tracking systems: mpd, cbm and bm@n at nica and fair michael...
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Development of Silicon Sensors for Tracking Systems:
MPD, CBM and BM@N at NICA and FAIR
Michael MerkinSINP MSU
09.07.2013 Prague, ASI Symmetries and SPIN 1
UNILAC
SIS18 SIS100/300p-Linac
HESR
CR &RESR
NESR100 m
Primary Beams
• 1012/s; 1.5 GeV/u; 238U28+
• 1010/s 238U73+ up to 35 GeV/u• 3x1013/s 30 GeV protons
Storage and Cooler Rings• radioactive beams
• 1011 antiprotons 1.5 - 15 GeV/c,
stored and cooled
Secondary Beams• range of radioactive beams up to 1.5 - 2 GeV/u; up to factor 10 000 higher in intensity than presently • antiprotons 3 - 30 GeV
Technical Challenges• cooled beams • rapid cycling superconducting magnets• dynamical vacuum
SIS100: Au 11 A GeVSIS300: Au 35 A GeV
APPA
The Facility for Antiproton and Ion Research FAIR
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Collider
BM@N
SPD
MPD
Booster,Nuclotron
The NICA-MPD challenge :
to prove QGP creation in high net baryon density region
The BM@N challenge :
to prove QGP creation through self-amplified long-range spinodial correlations
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The BM@N experiment project The BM@N experiment project • measurements of the multistrange objects (Ξ, Ω, exotics)
& hypernuclei in HI collisions
• close to the threshold production in the region of high sensitivity to the models prediction
GIBS magnet (SP-41)
TS-target station, T0- start diamond detector,
STS - silicon tracker, ST- straw tracker, DC- drift chambers, RPC- resistive plate chambers, ZDC- zero degree calorimeter, DTE – detector of tr. energy.
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FFD
MPD detector at NICAMagnet : 0.5 T T0, Trigger : FFDCentrality &Event plane : ZDC
PID: TOF, TPC, ECAL
Tracking (||<2): TPC
0.5<p<1 GeV/c
Stage 1 (2017)TPC, Barrel TOF & ECAL, ZDC, FFD
Stage 2: IT + Endcaps(tracker,TOF,ECAL)
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The CBM experiment at FAIR
DipoleMagnet
Ring ImagingCherenkovDetector
SiliconTrackingSystem
Micro VertexDetector
Transition Radiation Detectors
Resistive Plate Chambers (TOF) Electro-
magneticCalorimeter
Projectile SpectatorDetector(Calorimeter)
Target
two configurations:
- electron-hadron - and muon setup
MuonDetection System
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Tracking systems design constraints• Coverage:
― rapitidies from center-of mass to close to beam
― aperture 2.5° < < 25° (less for BM_N)― 4π for MPD
• Momentum resolution ―δp/p 1% ― field integral 1 Tm, ― 25 µm single-hit spatial resolution ― material budget per station ~1% X0
• No event pile-up― 10 MHz interaction rates― self-triggering read-out ― signal shaping time < 20 ns
• Efficient hit & track reconstruction close to 100% hit eff. > 95% track eff. for momenta >1 GeV/c
• Minimum granularity @ hit rates < 20 MHz/cm2
― maximum strip length compatible with hit occupancy and S/N performance
― largest read-out pitch compatible with the required spatial resolution
• Radiation hard sensors compatible with the CBM physics program
― 1 × 1013 neq/cm2 (SIS100)― 1 × 1014 neq/cm2 (SIS300)
• Integration, operation, maintenance― compatible with the confined space
in the dipole magnet
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• Aperture: 2.5° < < 25° (some stations up to 38°).• 8 tracking stations between 0.3 m and 1 m downstream the target.• Built from double-sided silicon microstrip sensors in 3 sizes,
arranged in modules on a small number of different detector ladders. • Readout electronics outside of the physics aperture.
System concept
Prague, ASI Symmetries and SPIN 8
Assessment of tracking stations – material budget
station 4
sensor: 0.3% X0
r/o cables: 2×0.11% X0
electronics
front view side view09.07.2013 Prague, ASI Symmetries and SPIN 9
Assessment of tracking stations – sensor occupancy
sensor occupancy := ratio “nb. of hit strips : nb . of all strips“ in a sensor
station 1
Y/cm
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Assessment of tracking stations – hit cluster size
in station 4
mean: 2.7
distribution for full STS
cluster of strips := number of adjacent strips in a sensor that fired simultaneously
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NICA MPD-ITS
Th
Computer model simulations by V.P.Kondratiev and N.Prokofiev, SPbSU
MPD ITS status
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The CBM-MPD STS Consortium: change in sensor production policy – mixed DSSD
SSSD structure of STS (based on experience gotton!)
DSSD: German Party responsibility –• CiS, Erfurt (62х62) •Hamamatsu, Japan (42х62), double metal on P-side
SSSD-sandwich: the Consortium responsibility:•Hamamatsu, Japan (42х62), •On-SemiConductor, Czech Rep. (62х62) •RIMST,RF •“Integral”, Belorussia auxiliary chipcable (SE RTIIE)
Sensor development – involvement of Hamamatsu , an attempt to repeat at vendors in
Russia, Belarussia, and Czech Republics
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Microstrip sensors
• double-sided, p-n-n structure • width: 6.2 cm • 1024 strips at 58 m pitch• three types, strip lengths: 2, 4, 6 cm, 4 cm• stereo angle front-back-sides 7.5° • integrated AC-coupled read-out• double metal interconnects on p-side, or
replacement with an external micro cable• operation voltage up to few hundred volts
• radiation hardness up to 1 × 1014 neq/cm2
4” and 6” wafers, 300 µm thicktest and full-size sensors
Prague, ASI Symmetries and SPIN 14
Prototype Year Vendor Processing Size [cm2] Description
No name 2005 RIVST Double-sided 6.2 4.2 ±7.5 deg
CBM01 2007 CiS double-sided 5.5 5.5 ±7.5 deg
CBM03 2010 CiS double-sided 6.2 6.2 ±7.5 deg
CBM03’ 2011 CiS Single/CBM03 6.2 6.2 test for CBM05
CBM05 2013 CiS double-sided 6.2 6.2 7.5/0 degfull-size
CBM05H4 2013 Hamamatsu double-sided 6.2 4.2 7.5/0 deg full-size
CBM05H2 2013 Hamamatsu single-sided 6.2 2.2 7.5/0 deg full-size
Prototype microstrip sensors
external on-sensor cableCBM05 CBM05H4 CBM05H2
under study: replacement for integrated 2nd metal layer
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Sensor N-side Contact Pads
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N-side poly-Si resistors
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N-side p-stops configuration
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N-side Guard Rings
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Sensor P-side 1st and 2nd metal
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Sensor P-side 1st and 2nd metal details
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P-side Guard Rings
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Irradiations Studies
9 structures from CiS:Size 7 x 7 mm2,Active area 5 х 5 mm2,Thickness - 280 mkm
6 structures from RIMST:Size - 10 x 10 mm2, Active area ~8 x 8 mm2, Thickness 300 mkm
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Doses
CiS:• 7.3 х 1010 n/сm2, • 7.3 х 1011 n/сm2, • 1.6 х 1012 n/сm2, • 1.0 х 1013 n/сm2, • 1.8 х 1013 n/сm2, • 6.4 х 1013 n/сm2
RIMST:
• 1.5 х 1012
n/сm2,
• 1.2 х 1013
n/сm2,
• 2.1 х 1013 n/сm2
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Dark current of irradiated test structures VS neutron fluence
(after annealing 80min. at +60oC)
0
1
10
100
1000
10000
100000
1.0E+10 1.0E+11 1.0E+12 1.0E+13 1.0E+14
Fluence (n/cm2)
I de
t (n
A)
at
+2
0C
CBM test structures~5x5mm2MSU test structures~9x9mm2
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Results
Annealing ~+20С, 60 min.ELMA 1.5х1012
1.0х1013
3.1х1013
3.4х10-17
6.6х10-17
3.6х10-17
7.0х10-17
5.9х10-17
5.5х10-17
CiS 1.0х1013
3.1х1013
1.0х1014
5.4х10-17
3.7х10-17
4.1х10-17
5.9х10-17
5.6х10-17
4.9х10-17
Producer Fluence, (n/см2)
α, A/cm Expected,
α, A/cm
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Full Depletion VoltageFDV of irradiated test structures VS
neutron fluence(after anniling 80min. at +600C)
0
20
40
60
80
1.0E+10 1.0E+11 1.0E+12 1.0E+13 1.0E+14
Fluence (n/cm2)
Vfd
(V
) CBM test structure #41m,51m,61m(~5x5mm2)
MSU test structure #66,68(~9x9mm2)
Fit (initial Vfd=80V)
Fit (initial Vfd=25V)
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• Good agreement with known data on current degradation for high doses .
• Not so good for low doses, but might be it because of mistakes in dose measurements.
• Expected behavior for full depletion voltage
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UMC 180 nm CMOS
die size 6.5 mm × 10 mm
design V1.0 @ AGH Kraków
produced 2012
full-size prototype dedicated to signal detection from the double-sided microstrip sensors in the CBM environment
Channels, pitch 128 + 2 test
Channel pitch 58
Input signal polarity + and -
Input current 10 nA
Noise at 30 pF load 900 e-
ADC range 16 fC, 5 bit
Clock 250 MHz
Power dissipation < 10 mW/channel
Timestamp resolution < 10 ns
output interface 4 × 500 Mbit/s LVDS
new w.r.t. n-XYTER architecture: effective two-level discriminator scheme
fast low noise low power dissipation
Readout chip STS-XYTER
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Thank you for your attention!
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