developing capacitors for wide-bandgap applications · 2017. 4. 19. · 1 © 2017 kemet...

1© 2017 KEMET Electronics, All Rights Reserved

Developing Capacitors for

Wide-Bandgap

Applications

Dr. John BultitudeAPEC 2017Tampa, FL


John Bultitude

KEMET Electronics Corporation 2835 Kemet Way Simpsonville, SC 29681 USA

Development Challenges for DC-Link Capacitors for Wide Band Gap Semiconductor Applications

KEMET Contributors: Lonnie Jones, Buli Xu, Jim Magee, Reggie Phillips, Peter Blais, Axel Schmidt, John McConnell, Galen Miller, Allen Templeton, George Haddox, Joshua Reid, Erik Reed, Nathan Reed, Javaid Qazi& Hector Nieves


Outline

• WBG Semiconductors– Background – Capacitor Needs

• Capacitor Types– Film Capacitors using Metallized Polypropylene– Ceramic Capacitors of Ni BME C0G MLCC

• MLCC Packaging– Transient Liquid Phase Sintering (TLPS) Technology– Leadless for Max. Cap. In given assembly area

• Summary


WBG SemiconductorsBackground

• Gallium Nitride (GaN)• Volume production since the 1990’s

• RF• LED

• Silicon Carbide (SiC)• Commercial production since 2008

• Power Inverters• Low Voltage Power Distribution

• Advantages over Silicon– More energy efficient– Less cooling– Miniaturization

• As WBG costs decrease more they will increasingly replace silicon mid and lower power applications in the future

Si Based

WBG Based on GaN or SiC

DC to DC 85% 95%

AC to DC 85% 90%

DC to AC 96% 99%

Power Conversion Efficiency

Source: Mouser Electronics, L. Cuthbertson, 2016

© 2017 KEMET Electronics, All Rights Reserved

Future Power ElectronicsSemiconductor vs Power vs Frequency

Source: P. Friedrichs & M. Buschkuhle, Infineon AG, Energetica India, May/June 2016


WBG Capacitor Requirements

Capacitor RequirementWBG Semiconductor Trend

Smaller, low ESR, low ESL low loss capacitors with high dV/dt & current handling capability

Higher Switching Frequencies 20kHz → 100kHz → 100’s MHz

Higher Operation Voltages400V → 650V →1200V→1700V

GaN SiC

Reliable performance at higher voltages

High Junction Temperatures105oC → 125oC → 200oC+

SiC

Reliable performance at elevated temperatures ≥ 125oC withrobust mechanical performance• Packaging close to the hot

semiconductor to:• Lower ESL• Minimize cooling costs


Power Converter Capacitors

1 AC Harmonic Filter 3Φ 2 Snubber 3 DC Link

Typical Capacitor Types:

0 EMI / RFIFilter 1Φ

L1

L2

CXCY

CY

Power lineequipment

L1

L2

CXCY

CY

Power lineequipment

AC/DCConverter

DC/ACInverter

1 12 23

AC ~ Power Source

AC ~ Power Load

System Overview:

0


How Much Capacitance Do We Need?Example: DC Link for 400V with 10% Ripple

*

* Source: Prof. R. Kennel, Technical University Munich, Germany



• Higher Frequencies, Higher Voltages & Lower Power requires less capacitance


How Much Capacitance Do We Need?Polypropylene Film to MLCC

• For WBG DC-Link Capacitors:– Lower capacitance required

promotes miniaturization due to:• Increasing switching frequency• Higher voltages

• Lower capacitance is within the range of MLCC.– But these need must be:

• Extremely reliable• Over-Temperature and

Over-Voltage Capable• High current capable• Mechanically Robust


Power Film Technology (Metallized PP)Effect of Frequency

Increasing Frequency = Higher DF

0.04%

0.50%


Power Film Technology (Metallized PP)Effect of Higher Temperature

• Higher Temperature– Voltage & Current Limitation– Shorter Life, Lower Reliability


Ni BME C0G 3640 Prototypes

Nominal Cap 0.22 µF 0.33 µF 0.47 µFCapacitance (nF) 227 343 487DF (%) 0.0080 0.0117 0.0110IR @ 25oC (GΩ) 458 277 242IR @ 125oC (GΩ) 7.42 6.47 6.24

MLCC Capacitor DevelopmentNi BME C0G 3640 Case Size

Ref. J. Bultitude et al; Proc. Intl. Symposium on 3D Power Electronics, NC State, June 13-15, 2016

• Ni BME C0G 3640 have: – Low DF – High IR– Stable Capacitance at high

temperatures & voltages

3640 L x W x TH0.36” x 0.40” x 0.10”9.1mm x 10.2mm x 2.5mmVolume = 0.23cm3


Ni BME C0G MLCC 3640 500V 150oCHigher Frequency

0.026%

0.15%

Increasing Frequency = Higher DF but < Metallized PP


Ni BME C0G MLCC 3640 500V 150oCReliability by Accelerated Testing

• Higher Temperature– Low failure rates @ 200oC*– Repeatable Capability

*Ref. J. Bultitude et al; Proc. Intl. Symposium on 3D Power Electronics, NC State, June 13-15, 2016

No Failures (0/80) or degradation


Ni BME C0G MLCC 3640 0.22µF 500V 150oCESR & Current Handling @ 150oC 100kHz

• Lower DF & ESR reduce the power dissipated

P = power dissipatedi = currentd = dissipation factorf = frequencyC = capacitanceR = resistance, ESR

• No failures after 1000hrs testing @ 150oC 15ARMS 100kHz

Ref. J. Bultitude et al; Proc. Intl. Symposium on 3D Power Electronics, NC State, June 13-15, 2016

≈ 75 ARMS/µF or ≈ 65 ARMS/cm3


MLCC Packaging Different Assembly Options

• Surface Mounting*– High MOR with Board Flex > 3mm– 3640 pass AEC Q200 temp. cycle testing

• Embedding• Leaded MLCC

– Through-hole/Surface Mount/Press-fit– Lead to MLCC > 200oC HMP Pb-solder

• Transient Liquid Phase Sintering– Replace Solders in MLCC packaging

*Ref. J. Bultitude et al; Proc. Intl. Symposium on 3D Power Electronics, NC State, June 13-15, 2016

Tested Pieces to 10mm DID NOT FAIL


What is TLPS? – Low temperature reaction of

low melting point metal or alloy with a high melting point metal or alloy to form a reacted metal matrix or alloy

– Forms a metallurgical bond between 2 surfaces

Transient Liquid Phase Sintering (TLPS)Basic Technology & Types

Ref. J. Bultitude et al; MS&T 15, Columbus, OH, USA, October 5, 2015

CuSn TLPS

Heat

InAg TLPS


Transient Liquid Phase Sintering (TLPS)Leaded & Leadless Case Size 2220 MLCC Performance

Leaded• Improved High Temperature

performance Vs. solders

Leadless• Pass 125oC Temp. Cycling

• High Shear Strength

Ref. J. McConnell et al; IMAPS 2016, Pasadena, CA, USA, October 13, 2016

250 500 750 1000In-Ag/Niunderplate 0/30 0/30 0/30 0/30In-Ag/Cuunderplate 0/30 0/30 0/30 0/30

TemperatureCycling:-40Cto+200C:CyclesTLPSTypeMLCCTermination

US Patents 8,331,078B2, 8,902,565B2 & 9,472,342B2


Leadless Packaging 3640 0.22µF 500V MLCCForm Factors & Materials

CuSnTLPS

Termination

Circuit Board/ Package

Solder

Ni/Thin Au


Leadless Packages of 3640 0.22µF 500V MLCCPerformance

• Higher Capacitance to ≈ 1µF• Increased height of Leadless

Stacks increases maximum inductance

• High Insulation Resistance to 200oC

10 mm 4-Chip 2.9 nH

5 mm 2-Chip 1.6 nH

2.5 mm MLCC 0.9 nH

2 µA0.26 µA


Leadless Packages of 3640 0.22µF 500V MLCCPerformance

• SRF decreases with increasing capacitance to ≈ 1µF

• ESR remains < 3 mΩ below 2MHz

SRF 3MHz

SRF 6MHz

SRF 11MHz


Leadless Packages of 3640 0.22µF 500V MLCCSurface Mounted Performance

• Board Flexure is > 3mm similar to MLCC

• No Failures 0/50 through 500 cycles -55 to +150oC

Tested Pieces to 10mm DID NOT FAIL


Leadless Packages of 4 X 3640 0.22µF 500V MLCCStack Orientation; Horizontal Vs. Vertical

Vertical Orientation has:

• Higher SRF

• Lower ESR

Horizontal Vertical

3 MHz5.7 MHz


Leadless Packages of 4 X 3640 0.22µF 500V MLCCRipple Current Heating; Horizontal Vs. Vertical

Vertical Orientation:• More even

heating• Lower Temp.

@ Steady State ≈ - 5oC

STEADY STATE12ARMS @ 140kHz WARMING UP

Top View

Side View

Horizontal

Vertical

Side View

Heat dissipation in Air above.

Heat dissipation into Cu board.

Top View

34.9oC

29.2oC


Summary

• WBG requirements & increases in switching frequency change capacitor needs:– Smaller Values– High Voltage & High Current Capability– Reliable at High Temperatures

• BME Ni C0G MLCC solutions have:– High reliability at high temperature & voltage– High ripple current capability– High MOR & flexure

• Transient Liquid Phase Sintering Technology can be used for:– Solder Replacement (TLPS is Pb-free)– Leadless Packaging to realize higher capacitance in a given pad size– Vertical Orientation has higher SRF, lower ESR and less ripple heating


Thank You!

Download Slides At:https://ec.kemet.com/developing-ceramic-dc-link-capacitors

developing capacitors for wide-bandgap applications · 2017. 4. 19. · 1 © 2017 kemet...

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