datasheet ipt60r080g7or separate totem poles is generally recommended. table 1 key performance...

1

IPT60R080G7

Rev.2.0,2017-01-27Final Data Sheet

Tab

12 3 4 5

86 7

HSOF

Drain

Tab

Gate

Pin 1

Source

Pin 3-8

Driver

Source

Pin 2

MOSFET600VCoolMOSªG7PowerTransistorTheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsoftheC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityandtheimprovedthermalpropertiesoftheTOLLpackagetoenableapossibleSMDsolutionforhighcurrenttopologiessuchasPFCupto3kW

Features•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.•TOLLpackagehasinbuilt4thpinKelvinSourceconfigurationandlowparasiticsourceinductance(~1nH).•TOLLpackageisMSL1compliant,totalPb-free,haseasyvisualinspectiongroovedleadsandisqualifiedforindustrialapplicationsaccordingtoJEDEC(J-STD20andJESD22).•TOLLSMDpackagecombinedwithleadfreedieattachprocessenablesimprovedthermalperformanceRth.

Benefits•C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venablingfasterswitchingleadingtohigherefficiency.•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesintheapplication•C7Goldcanreach28mΩininTOLL115mm2footprint,whereaspreviousBICC7600Vwas40mΩin150mm2D2PAKfootprint.•ReducingparasiticsourceinductancebyKelvinSourceimprovesefficiencybyfasterswitchingandeaseofuseduetolessringing.•TOLLpackageiseasytouseandhasthehighestqualitystandards.•ImprovedthermalsenableSMDTOLLpackagetobeusedinhighercurrentdesignsthanhasbeenpreviouslypossible.

ApplicationsPFCstagesandPWMstages(TTF,LLC)forhighpower/performanceSMPSe.g.Computing,Server,Telecom,UPSandSolar.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V

RDS(on),max 80 mΩ

Qg.typ 42 nC

ID,pulse 83 A

ID,continuous @ Tj<150°C 40 A

Eoss@400V 5 µJ

Body diode di/dt 820 A/µs

Type/OrderingCode Package Marking RelatedLinksIPT60R080G7 PG-HSOF-8 60R080G7 see Appendix A

2

600VCoolMOSªG7PowerTransistorIPT60R080G7


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

2918 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 83 A TC=25°C

Avalanche energy, single pulse EAS - - 97 mJ ID=5A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.49 mJ ID=5A; VDD=50V; see table 10

Avalanche current, single pulse IAS - - 5.0 A -

MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V

Gate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 167 W TC=25°C

Storage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque - - - n.a. Ncm -

Continuous diode forward current IS - - 29 A TC=25°C

Diode pulse current2) IS,pulse - - 83 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 25 V/ns VDS=0...400V,ISD<=7.7A,Tj=25°C see table 8

Maximum diode commutation speed dif/dt - - 820 A/µs VDS=0...400V,ISD<=7.7A,Tj=25°C see table 8

Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1) Limited by Tj max.2) Pulse width tp limited by Tj,max3) Identical low side and high side switch

4



2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 0.75 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint

Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W

Device on 40mm*40mm*1.5mmepoxy PCB FR4 with 6cm² (onelayer, 70µm thickness) copper areafor drain connection and cooling.PCB is vertical without air streamcooling.

Soldering temperature, wave- & reflowsoldering allowed Tsold - - 260 °C reflow MSL1

5



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA

Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.49mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=600,VGS=0V,Tj=25°C

VDS=600,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.0690.172

0.080- Ω VGS=10V,ID=9.7A,Tj=25°C

VGS=10V,ID=9.7A,Tj=150°C

Gate resistance RG - 0.8 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 1640 - pF VGS=0V,VDS=400V,f=250kHz

Output capacitance Coss - 34 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 63 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) - 643 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 19 - ns VDD=400V,VGS=13V,ID=9.7A,RG=5.3Ω;seetable9

Rise time tr - 5 - ns VDD=400V,VGS=13V,ID=9.7A,RG=5.3Ω;seetable9

Turn-off delay time td(off) - 61 - ns VDD=400V,VGS=13V,ID=9.7A,RG=5.3Ω;seetable9

Fall time tf - 3.5 - ns VDD=400V,VGS=13V,ID=9.7A,RG=5.3Ω;seetable9

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 8 - nC VDD=400V,ID=9.7A,VGS=0to10V

Gate to drain charge Qgd - 15 - nC VDD=400V,ID=9.7A,VGS=0to10V

Gate charge total Qg - 42 - nC VDD=400V,ID=9.7A,VGS=0to10V

Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=9.7A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

6



Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.8 - V VGS=0V,IF=9.7A,Tj=25°C

Reverse recovery time trr - 310 - ns VR=400V,IF=9.7A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 3.7 - µC VR=400V,IF=9.7A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 26 - A VR=400V,IF=9.7A,diF/dt=100A/µs;see table 8

7



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

20

40

60

80

100

120

140

160

180

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-2

10-1

100

101

102 1 µs10 µs100 µs1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-2

10-1

100

101

102 1 µs10 µs100 µs

1 ms

10 msDC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 100 101 10210-3

10-2

10-1

100

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

8



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

20

40

60

80

100

120

14020 V10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

10

20

30

40

50

60

70

20 V

10 V8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 10 20 30 40 50 60 70 800.175

0.185

0.195

0.205

0.215

0.225

0.235

0.245

0.255

0.265

0.275

0.285

0.295

20 V

5.5 V 6 V 6.5 V 7 V

10 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-50 -25 0 25 50 75 100 125 1500.040

0.060

0.080

0.100

0.120

0.140

0.160

0.180

0.200

98%

typ

RDS(on)=f(Tj);ID=9.7A;VGS=10V

9



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

20

40

60

80

100

120

140

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 40 500

2

4

6

8

10

12

400 V

120 V

VGS=f(Qgate);ID=9.7Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.510-1

100

101

102

125 °C25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

10

20

30

40

50

60

70

80

90

100

EAS=f(Tj);ID=5A;VDD=50V

10



Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 180540

560

580

600

620

640

660

680

700

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 50010-1

100

101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000

1

2

3

4

5

6

7

Eoss=f(VDS)

11



5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9switchingtimes(ss)Switching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10Unclampedinductiveload(ss)Unclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12



6PackageOutlines

Z8B00176939

REVISION

ISSUE DATE

EUROPEAN PROJECTION

01

28-04-2015

DOCUMENT NO.

E5

E4

K1

e

MILLIMETERS

A

DIM

MIN MAX

INCHES

MIN MAX

b1

c

D

D2

E

E1

N

L

2.20 2.40 0.087 0.094

9.70

0.40

10.28

9.70

9.90

0.60

10.58

10.10

0.382

0.016

0.405

0.382

0.390

0.024

0.416

0.398

8 8

1.20 (BSC) 0.047 (BSC)

b 0.70 0.90 0.028 0.035

1) partially covered with Mold Flash

b2 0.42 0.50 0.017 0.020

H

H1

11.48 11.88 0.452 0.468

H2 7.15 0.281

H3 3.59 0.141

H4 3.26 0.128

L1 0.50 0.90 0.020 0.035

3.30 0.130

7.50 0.295

8.50 0.335

9.46 0.372

6.55 6.75 0.258 0.266

4.18 0.165

L4 1.00 1.30 0.039 0.051

L2 0.50 0.70 0.020 0.028

2

SCALE

0

4mm

0

2

L5 2.62 2.81 0.103 0.111

1.40 1.80 0.055 0.071

Figure1OutlinePG-HSOF-8

13



7AppendixA

Table11RelatedLinks

• IFXCoolMOSTMG7Webpage:www.infineon.com

• IFXCoolMOSTMG7applicationnote:www.infineon.com

• IFXCoolMOSTMG7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com

http://www.infineon.com/c7-gold-toll



14



RevisionHistoryIPT60R080G7

Revision:2017-01-27,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2017-01-27 Release of final version

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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PublishedbyInfineonTechnologiesAG81726München,Germany©2017InfineonTechnologiesAGAllRightsReserved.

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InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

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datasheet ipt60r080g7or separate totem poles is generally recommended. table 1 key performance...

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