datasheet ik#40n120h3 - transfer multisort elektronik ... reverse recovery time trr - 639 - ns diode...
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IGBTHighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode
IKW40N120H31200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
2
IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiodeFeatures:
TRENCHSTOPTMtechnologyoffering•verylowVCEsat•lowEMI•Verysoft,fastrecoveryanti-paralleldiode•maximumjunctiontemperature175°C•qualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•completeproductspectrumandPSpiceModels:http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies•weldingconverters•converterswithhighswitchingfrequency
G
C
E
GC
E
KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKW40N120H3 1200V 40A 2.05V 175°C K40H1203 PG-TO247-3
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IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value UnitCollector-emitter voltage VCE 1200 V
DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C
IC 80.040.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 160.0 A
Diodeforwardcurrent,limitedbyTvjmaxTC=25°CTC=100°C
IF 40.020.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand timeVGE=15.0V,VCC≤600VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj=175°C
tSC
10
µs
PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot
483.0220.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value UnitCharacteristic
IGBT thermal resistance,junction - case Rth(j-c) 0.31 K/W
Diode thermal resistance,junction - case Rth(j-c) 1.11 K/W
Thermal resistancejunction - ambient Rth(j-a) 40 K/W
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IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=40.0ATvj=25°CTvj=125°CTvj=175°C
---
2.052.502.70
2.40--
V
Diode forward voltage VF
VGE=0V,IF=20.0ATvj=25°CTvj=175°C
--
1.801.85
2.35-
V
Diode forward voltage VF
VGE=0V,IF=40.0ATvj=25°CTvj=125°CTvj=175°C
---
2.402.602.60
3.05--
V
Gate-emitter threshold voltage VGE(th) IC=1.00mA,VCE=VGE 5.0 5.8 6.5 V
Zero gate voltage collector current ICESVCE=1200V,VGE=0VTvj=25°CTvj=175°C
--
--
250.02500.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA
Transconductance gfs VCE=20V,IC=15.0A - 20.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 2330 -
Output capacitance Coes - 185 -
Reverse transfer capacitance Cres - 130 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=960V,IC=40.0A,VGE=15V - 185.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 13.0 - nH
Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s
IC(SC)VGE=15.0V,VCC≤600V,tSC≤10µsTvj=175°C
- 139 - A
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IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 30 - ns
Rise time tr - 57 - ns
Turn-off delay time td(off) - 290 - ns
Fall time tf - 16 - ns
Turn-on energy Eon - 3.20 - mJ
Turn-off energy Eoff - 1.20 - mJ
Total switching energy Ets - 4.40 - mJ
Tvj=25°C,VCC=600V,IC=40.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=70nH,Cσ=67pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 355 - ns
Diode reverse recovery charge Qrr - 1.90 - µC
Diode peak reverse recovery current Irrm - 12.8 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -150 - A/µs
Tvj=25°C,VR=600V,IF=40.0A,diF/dt=500A/µs
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°CTurn-on delay time td(on) - 29 - ns
Rise time tr - 49 - ns
Turn-off delay time td(off) - 366 - ns
Fall time tf - 48 - ns
Turn-on energy Eon - 4.40 - mJ
Turn-off energy Eoff - 2.60 - mJ
Total switching energy Ets - 7.00 - mJ
Tvj=175°C,VCC=600V,IC=40.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=70nH,Cσ=67pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr - 639 - ns
Diode reverse recovery charge Qrr - 4.30 - µC
Diode peak reverse recovery current Irrm - 16.0 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -105 - A/µs
Tvj=175°C,VR=600V,IF=40.0A,diF/dt=500A/µs
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IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
Figure 1. Collectorcurrentasafunctionofswitchingfrequency(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,rG=12Ω)
f,SWITCHINGFREQUENCY[kHz]
IC,C
OLLECTO
RCURRENT[A]
1 10 100 10000
20
40
60
80
100
120
140
160
TC=80°
TC=110°
TC=80°
TC=110°
Figure 2. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
1 10 100 10000.1
1
10
100
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 3. Powerdissipationasafunctionofcasetemperature(Tj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot ,POWERDISSIPATION[W
]
25 50 75 100 125 150 1750
100
200
300
400
500
Figure 4. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tj≤175°C)
TC,CASETEMPERATURE[°C]
IC,C
OLLECTO
RCURRENT[A]
25 50 75 100 125 150 1750
20
40
60
80
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IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
Figure 5. Typicaloutputcharacteristic(Tj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
0 1 2 3 4 5 60
20
40
60
80
100
120
140
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaloutputcharacteristic(Tj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
0 2 4 6 80
20
40
60
80
100
120
140
160
180
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Typicaltransfercharacteristic(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
5 10 150
50
100
150Tj=25°CTj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)
Tj,JUNCTIONTEMPERATURE[°C]
VCE(sat) ,COLLECTO
R-EMITTE
RSATU
RATION[V
]
0 25 50 75 100 125 150 1751.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0IC=20AIC=40AIC=80A
9
IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
Figure 9. Typicalswitchingtimesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,rG=12Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
5 15 25 35 45 55 65 7510
100
1000td(off)
tftd(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,IC=40A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
0 10 20 30 4010
100
1000td(off)
tftd(on)
tr
Figure 11. Typicalswitchingtimesasafunctionofjunctiontemperature(ind.load,VCE=600V,VGE=15/0V,IC=40A,rG=12Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 17510
100
1000td(off)
tftd(on)
tr
Figure 12. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=1mA)
Tj,JUNCTIONTEMPERATURE[°C]
VGE(th) ,GATE
-EMITTE
RTHRESHOLD
VOLTAGE[V
]
0 25 50 75 100 125 150 1752
3
4
5
6
7typ.min.max.
10
IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
Figure 13. Typicalswitchingenergylossesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,rG=12Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
E,S
WITCHINGENERGYLOSSES[m
J]
5 15 25 35 45 55 65 750
2
4
6
8
10
12
14
16
18
20Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,IC=40A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
E,S
WITCHINGENERGYLOSSES[m
J]
0 10 20 30 400
2
4
6
8
10
12Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasafunctionofjunctiontemperature(indload,VCE=600V,VGE=15/0V,IC=40A,rG=12Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
E,S
WITCHINGENERGYLOSSES[m
J]
25 50 75 100 125 150 1750
2
4
6
8Eoff
Eon
Ets
Figure 16. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(ind.load,Tj=175°C,VGE=15/0V,IC=40A,rG=12Ω,testcircuitinFig.E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,S
WITCHINGENERGYLOSSES[m
J]
400 500 600 700 8000
2
4
6
8
10Eoff
Eon
Ets
11
IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
Figure 17. Typicalgatecharge(IC=40A)
QGE,GATECHARGE[nC]
VGE,G
ATE
-EMITTE
RVOLTAGE[V
]
0 40 80 120 160 2000
2
4
6
8
10
12
14
16240V960V
Figure 18. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,C
APACITANCE[pF]
0 10 20 3010
100
1000Cies
Coes
Cres
Figure 19. Typicalshortcircuitcollectorcurrentasafunctionofgate-emittervoltage(VCE≤600V,startatTj=25°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC) ,SHORTCIRCUITCOLLECTO
RCURRENT[A]
10 12 14 16 1850
100
150
200
250
300
Figure 20. Shortcircuitwithstandtimeasafunctionofgate-emittervoltage(VCE≤600V,startatTj≤150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,S
HORTCIRCUITW
ITHSTA
NDTIME[µs]
10 12 14 16 18 200
10
20
30
40
50
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IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
Figure 21. IGBTtransientthermalimpedance(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTH
ERMALIMPEDANCE[K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1 D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.064143.7E-4
20.0740553.9E-3
30.1623150.01916724
410.0E-30.3399433
Figure 22. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTH
ERMALIMPEDANCE[K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.2907752.7E-4
20.433772.6E-3
30.3630150.01477471
40.027810.1784607
Figure 23. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,R
EVERSERECOVERYTIME[ns]
200 400 600 800 1000200
300
400
500
600
700
800Tj=25°C, IF = 40ATj=175°C, IF = 40A
Figure 24. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,R
EVERSERECOVERYCHARGE[µC]
200 400 600 800 10000
1
2
3
4
Tj=25°C, IF = 40ATj=175°C, IF = 40A
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IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
Figure 25. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,R
EVERSERECOVERYCURRENT[A]
200 400 600 800 10006
8
10
12
14
16
18
20
22Tj=25°C, IF = 40ATj=175°C, IF = 40A
Figure 26. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofI
rr[A
/µs]
200 400 600 800 1000-300
-250
-200
-150
-100
-50
0Tj=25°C, IF = 40ATj=175°C, IF = 40A
Figure 27. Typicaldiodeforwardcurrentasafunctionofforwardvoltage
VF,FORWARDVOLTAGE[V]
IF ,FORWARDCURRENT[A]
0 1 2 3 40
20
40
60
80
100
120Tj=25°CTj=175°C
Figure 28. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature
Tj,JUNCTIONTEMPERATURE[°C]
VF ,FO
RWARDVOLTAGE[V
]
0 25 50 75 100 125 150 1751.0
1.5
2.0
2.5
3.0
3.5
4.0IF=10AIF=20AIF=40A
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IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
PG-TO247-3
15
IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
t
a
a
b
b
td(off)
tf t
rtd(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
vGE
(t)
t
t
IC(t)
vCE
(t)
90% VGE
vGE
(t)
t
t
vCE
(t)
tt1 t
4
2% IC
10% VGE
2% VCE
t2
t3
E
t
t
V I toff
= x x d
1
2
CE CE
t
t
V I ton
= x x d
3
4
CE C
CC
parasitic
relief
dI/dt
dI
I,V
Figure A.
Figure B.
Figure C.
Figure E.
Figure D.
IC(t)
16
IKW40N120H3Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-11-26
RevisionHistory
IKW40N120H3
Revision:2014-11-26,Rev.2.1Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2009-12-03 -
1.2 2010-02-10 -
2.1 2014-11-26 Final data sheet
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