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ELCT 503: Semiconductors German University in Cairo (GUC)
ELCT503
Semiconductors Fall 2014
Lecture 01: Introduction
Dr. Hassan Mostafa
حسن مصطفى. د
ELCT 503: Semiconductors German University in Cairo (GUC)
Course Outline
Course objectives
This course is basically about the major microelectronics devices that are extremely used in the last 60 years. This includes diodes and transistors
ELCT 503: Semiconductors German University in Cairo (GUC)
Course contents
Introduction
Semiconductors physics and basics
Physics and circuit modeling (dc & ac) of:
PN junction
BJT transistor
MOSFET transistor
ELCT 503: Semiconductors German University in Cairo (GUC)
Course Outline
Instructor: Dr. Hassan Mostafa
Textbook:
S. M. Sze, “Semiconductor Devices: Physics and Technology”, Wiley & So., ISBN 0471333727, 2001
Course Websire
http:// scholar.cu.edu.eg/hmostafa/classes/elct-503
Lecture time: Mondays 1st slot
ELCT 503: Semiconductors German University in Cairo (GUC)
References
H. Craig Casey (1998). Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors, Wiley & So., ISBN 0471171344.
B. Streetman, S. Banerjee (1999). Solid State Electronic Devices, Prentice Hall, ISBN 0130255386.
R. F. Pierret (1995). Semiconductor Device Fundamentals, Prentice Hall, ISBN 0201543931.
D. A. Neamen (2003). Semiconductor physics and devices: Basic principles, McGraw-Hill, ISBN~0072321075.
T. F. Bogart (1997). Electronic devices and circuits, Prentice Hall, ISBN~0133937607.
ELCT 503: Semiconductors German University in Cairo (GUC)
Course Grading
method %
Quizzes 15%
Lab performance 10%
Lab project / presentation 15%
Midterm exam 20%
Final exam 40%
ELCT 503: Semiconductors German University in Cairo (GUC)
Prerequisites
ELCT 301: Electrical Circuits I
ELCT 401: Electrical Circuits II
COMM 402: Electromagnetics
PHYS 202: Theromdynamics
PHYS 301: Atom Physics
ELCT 503: Semiconductors German University in Cairo (GUC)
semiconductor devices
Semiconductor devices are electronic devices that are fabricated using semiconductor materials such as Silicon, Germanium, and Gallium Arsenide.
Semiconductor devices are available as discrete components (available on shelf in electronics stores)
or can be integrated with a large number of similar devices onto a single chip, called an Integrated Circuit(IC).
ELCT 503: Semiconductors German University in Cairo (GUC)
Complementary Metal Oxide Semiconductor (CMOS) CMOS is a technology for constructing IC’s. This technology
is used in microprocessors, microcontrollers, Memories, and other
digital logic circuits.
Microprocessor
Microcontroller
RAM
ELCT 503: Semiconductors German University in Cairo (GUC)
The ability to fabricate billions of
individual components (transistors,
resistors, capacitors, etc.) on a silicon
chip with an area of a few cm2 has
enabled the information age.
Shrinking geometries permit more
devices to be placed in a given are of
silicon.
It is widely expected that these historical
trends will continue for at least another 5-
10 years, resulting in Chips that contain
tens of billions of components.
Information age
ELCT 503: Semiconductors German University in Cairo (GUC)
First Transistor from Bell Labs (1947)
ELCT 503: Semiconductors German University in Cairo (GUC)
Kilby first IC (1958)
ELCT 503: Semiconductors German University in Cairo (GUC)
First monolithic integrated circuit
1961 Picture shows a flip-
flop circuit containing
6 devices, produced in
planar technology.
Source:
R. N. Neyce, “Semiconductor
device-and-lead structure”,
U.S.Patent 2,981,877
ELCT 503: Semiconductors German University in Cairo (GUC)
first microprocessor
1971 Picture shows a four-bit microprocessor Intel 4004.
10 μm technology
3 mm 4 mm
2300 MOS-FETs
108 kHz clock frequency
Source: Intel Corporation
ELCT 503: Semiconductors German University in Cairo (GUC)
Pentium IV processor
2001 Picture shows a ULSI
chip with 32-bit processor
Intel Pentium 4.
0.18μm CMOS technology
17.5 mm 19 mm
42 000 000 components
1.6 GHz clock freuqncy
Source:
Intel Corporation
ELCT 503: Semiconductors German University in Cairo (GUC)
ELCT 503: Semiconductors German University in Cairo (GUC)
ELCT 503: Semiconductors German University in Cairo (GUC)
Moore’s Law
In 1965, Gordon Moore predicted that the number of transistors that can be integrated on a die would double every 18 to 14 months (i.e., grow exponentially with time).
Amazingly visionary – million transistor/chip barrier was crossed in the 1980’s.
2300 transistors, 1 MHz clock (Intel 4004) - 1971
16 Million transistors (Ultra Sparc III)
42 Million, 2 GHz clock (Intel P4) - 2001
Xilinx currently holds the "world-record" for an FPGA chip containing 6.8 billion transistors
ELCT 503: Semiconductors German University in Cairo (GUC)
Moore’s Law in Microprocessors
Transistors on microprocessors double every 2 years
Courtesy, Intel
1,000,000
100,000
10,000
1,000
10
100
1 1975 1980 1985 1990 1995 2000 2005 2010
8086
80286 i386
i486 Pentium®
Pentium® Pro
K 1 Billion
Transistors
Source: Intel
Projected
Pentium® II Pentium® III
ELCT 503: Semiconductors German University in Cairo (GUC)
Moore’s law scaling
ELCT 503: Semiconductors German University in Cairo (GUC)
Moore and CMOS Scaling
“CMOS scaling will not stay forever, but, forever can be delayed”
Moore, 2003
ELCT 503: Semiconductors German University in Cairo (GUC)
ELCT 503: Semiconductors German University in Cairo (GUC)
Moore’s Law Challenges Defects during the manufacturing
process (a single defect larger than some critical size usually means that the chip will not function correctly)
IC manufacturing requires low defect densities (Clean Rooms)
ELCT 503: Semiconductors German University in Cairo (GUC)
Clean Rooms
Clean room facility:
Particle free walls, furniture, and accessories must be used
Airflow through 0.3 microns filters
ELCT 503: Semiconductors German University in Cairo (GUC)
Clean Rooms
Clean room facility:
Main function of clean rooms is control of particle contamination
Requires control of air flow, water and chemical filtrations,
human protocol
Class N clean room means fewer than N particles (>0.5 µm) in
1 cubic foot of air
Classes types:
Class 10,000
Class 1,000
Class 100
Class 10
ELCT 503: Semiconductors German University in Cairo (GUC)
Clean Rooms
Clean room facility:
Class 10,000
Class 1,000
Class 100
Class 10
ELCT 503: Semiconductors German University in Cairo (GUC)
ELCT 503: Semiconductors German University in Cairo (GUC)
Electronics Design Flow
Design the circuit using electronic components
Simulate your circuit using Spice
Adjust the circuit till the simulation results are correct
Draw your layout
Simulate your layout (with parasitic) using Spice
Adjust the circuit/layout till the simulation results are correct
Send your design for tape-out
Test your chip If not working Repeat
ELCT 503: Semiconductors German University in Cairo (GUC)
Model of semiconductor device
Purpose of model:
geometry for layout design
current/voltage for electrical analysis
Used formalism:
mathematical equations
current voltage characteristics
equivalent electric circuit
ELCT 503: Semiconductors German University in Cairo (GUC)
PSpice models
Model line: Pattern: .MODEL MODNAME D(<parameter list>) Example: .MODEL PNDIODE1 D(IS=1.1E-15)
Model parameters Examples: IS, RS, VJ, EG, XTI, BV, IBV, TT, CJ0,…
Element line: Pattern: Dxxxxxx N+ N- MODNAME <area><off><> Example: D5 15 16 PNDIODE1
ELCT 503: Semiconductors German University in Cairo (GUC)
First letter of the element
known R – resistor C – capacitor L – inductor K – mutual inductor E – v-controlled v-source F – i-controlled i-source G – v-controlled i-source H – i-controlled v-source I – independent i-source V – independent v-source T – transmission line
semiconductor devices D – diode J – J-FET M – MOS-FET Q – bipolar transistor B – GaAs MES-FET
ELCT 503: Semiconductors German University in Cairo (GUC)
DC model versus AC model
Every electronic component has dc model and ac model
dc models assume that all the inputs are dc
ac models assume that all the inputs are ac
dc = large signal
ac = small signal
Superposition
ELCT 503: Semiconductors German University in Cairo (GUC)