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Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts and results ABIDEV 2019 (1) Guillaume Brunin (2) Henrique Miranda Matteo Giantomassi Gian-Marco Rignanese Georoy Hautier May 21, 2019 Institute of Condensed Matter and Nanosciences

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Page 1: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Computing the intrinsic mobility of electrons and holes in

semiconductors

Part I : concepts and resultsABIDEV 2019

(1) Guillaume Brunin(2) Henrique Miranda

Matteo GiantomassiGian-Marco Rignanese

Geo�roy Hautier

May 21, 2019

Institute of Condensed Matterand Nanosciences

Page 2: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electronic lifetimes and phonon-limited mobility

Electron-phonon coupling dictates various phenomena : intrinsic mobility,indirect light absorption, superconductivity,...Electrons are scattered by phonons : mechanism dominating the electroniclifetimes and the mobility at high temperature

[Yu & Cardona, Fundamentals of Semiconductors]1

Page 3: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electronic lifetimes and phonon-limited mobility

Electron mobility in the relaxation-time approximation of the linearized Boltz-mann transport formalism :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

Electronic lifetimes due to the scattering by phonons :

1·nk

= 2fi~

ÿ

m,‹

BZ

dq�

BZ

|gmn,‹(k, q)|2 ◊ [(n‹q + fmk+q)”(Ánk ≠ Ámk+q + Ê‹q)

+(n‹q + 1 ≠ fmk+q)”(Ánk ≠ Ámk+q ≠ Ê‹q)]

Perturbo

No need for Wannier functions or atomic orbitals !

2

Page 4: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electronic lifetimes and phonon-limited mobility

Electron mobility in the relaxation-time approximation of the linearized Boltz-mann transport formalism :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

Electronic lifetimes due to the scattering by phonons :

1·nk

= 2fi~

ÿ

m,‹

BZ

dq�

BZ

|gmn,‹(k, q)|2 ◊ [(n‹q + fmk+q)”(Ánk ≠ Ámk+q + Ê‹q)

+(n‹q + 1 ≠ fmk+q)”(Ánk ≠ Ámk+q ≠ Ê‹q)]

Perturbo

No need for Wannier functions or atomic orbitals !

2

Page 5: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electronic lifetimes and phonon-limited mobility

Electron mobility in the relaxation-time approximation of the linearized Boltz-mann transport formalism :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

Electronic lifetimes due to the scattering by phonons :

1·nk

= 2fi~

ÿ

m,‹

BZ

dq�

BZ

|gmn,‹(k, q)|2 ◊ [(n‹q + fmk+q)”(Ánk ≠ Ámk+q + Ê‹q)

+(n‹q + 1 ≠ fmk+q)”(Ánk ≠ Ámk+q ≠ Ê‹q)]

Perturbo

No need for Wannier functions or atomic orbitals !

2

Page 6: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electronic lifetimes and phonon-limited mobility

Electron mobility in the relaxation-time approximation of the linearized Boltz-mann transport formalism :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

Electronic lifetimes due to the scattering by phonons :

1·nk

= 2fi~

ÿ

m,‹

BZ

dq�

BZ

|gmn,‹(k, q)|2 ◊ [(n‹q + fmk+q)”(Ánk ≠ Ámk+q + Ê‹q)

+(n‹q + 1 ≠ fmk+q)”(Ánk ≠ Ámk+q ≠ Ê‹q)]

Perturbo

No need for Wannier functions or atomic orbitals !

2

Page 7: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electronic lifetimes and phonon-limited mobility

Electron mobility in the relaxation-time approximation of the linearized Boltz-mann transport formalism :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

Electronic lifetimes due to the scattering by phonons :

1·nk

= 2fi~

ÿ

m,‹

BZ

dq�

BZ

|gmn,‹(k, q)|2 ◊ [(n‹q + fmk+q)”(Ánk ≠ Ámk+q + Ê‹q)

+(n‹q + 1 ≠ fmk+q)”(Ánk ≠ Ámk+q ≠ Ê‹q)]

Perturbo

No need for Wannier functions or atomic orbitals !

2

Page 8: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Lifetimes in Silicon : agreement between ABINIT and EPW

Lifetime = 1/linewidth

3

Page 9: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Tetrahedron integration to replace Lorentzian broadening

Linewidth à ”(Ánk ≠ Ámk+q ± Ê‹q)Linewidth around the CBM of Si for a 60 ◊ 60 ◊ 60 k-point grid (300K)

More scattering channels for Á ≠ ÁCBM > ÊLO ∆ larger linewidthsA Lorentzian broadening requires convergence studiesTetrahedron method : no broadening parameter

4

Page 10: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Tetrahedron integration to replace Lorentzian broadening

Linewidth à ”(Ánk ≠ Ámk+q ± Ê‹q)Linewidth around the CBM of Si for a 60 ◊ 60 ◊ 60 k-point grid (300K)More scattering channels for Á ≠ ÁCBM > ÊLO ∆ larger linewidths

A Lorentzian broadening requires convergence studiesTetrahedron method : no broadening parameter

4

Page 11: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Tetrahedron integration to replace Lorentzian broadening

Linewidth à ”(Ánk ≠ Ámk+q ± Ê‹q)Linewidth around the CBM of Si for a 60 ◊ 60 ◊ 60 k-point grid (300K)More scattering channels for Á ≠ ÁCBM > ÊLO ∆ larger linewidthsA Lorentzian broadening requires convergence studies

Tetrahedron method : no broadening parameter

4

Page 12: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Tetrahedron integration to replace Lorentzian broadening

Linewidth à ”(Ánk ≠ Ámk+q ± Ê‹q)Linewidth around the CBM of Si for a 60 ◊ 60 ◊ 60 k-point grid (300K)More scattering channels for Á ≠ ÁCBM > ÊLO ∆ larger linewidthsA Lorentzian broadening requires convergence studiesTetrahedron method : no broadening parameter

4

Page 13: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Convergence of the linewidths in Silicon

Linewidth Ãs

BZ

dq�

BZ

|gmn,‹(k, q)|2...Linewidths on a 9 ◊ 9 ◊ 9 k-point grid, for increasing q-point gridsThe Tetrahedron integration converges fast (like for a DOS !)

5

Page 14: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Double-grid technique : 1 grid for matrix elements, 1 grid for energies

1·nk

= 2fi~

ÿ

m,‹

BZ

dq�

BZ

|gmn,‹(k, q)|2 ◊ [(n‹q + fmk+q)”(Ánk ≠ Ámk+q + Ê‹q)

+(n‹q + 1 ≠ fmk+q)”(Ánk ≠ Ámk+q ≠ Ê‹q)]

6

Page 15: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Double-grid technique : errors on the linewidths in Silicon

Linewidth Ãs

BZ

dq�

BZ

|gmn,‹(k, q)|2...Linewidths on a 9 ◊ 9 ◊ 9 k-point gridBlue : 9 ◊ 9 ◊ 9 q-point grid for matrix elements, increasing density forthe energy grid only

7

Page 16: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Polar materials : divergence of the matrix elements

g

LRmn,‹(k, q) = i

4fi�

e

2

4fiÁ0

ÿ

Ÿ

3~

2NMŸÊ‹q

4(1/2) ÿ

G ”=≠q

(q + G) · ZúŸ · eŸ‹(q)

(q + G) · ÁŒ · (q + G)

◊ È�mk+q|e i(q+G)·r|�nkÍ

128 S. Poncé et al. / Computer Physics Communications 209 (2016) 116–133

6

2

0

-2

-4

-6

4

80

60

20

40

500

400

300

200

100

0

Fig. 15. (Color online) (a) Electronic bandstructure of w-GaN along high-symmetrylines in the BZ. The red line highlights the band considered in the bottom panel.(b) Phonon dispersion interpolated from a 6 ⇥ 6 ⇥ 6 � -centered q-point grid. Thered line is the optical mode considered in the bottom figure. The filled dots areinelastic X-ray scattering data [145] and the filled triangles are Raman data [146].(c) Calculated electron–phononmatrix elements at k = � for the highest band andmode index, starting from 6 ⇥ 6 ⇥ 6 electron and phonon grids. A gauge-invariantelectron–phonon matrix element is obtained by averaging the square moduli overdegenerate states. The blue dashed line shows the standard interpolation, and thered line shows the polar interpolation using Eq. (13). The two sets of data arecompared with direct DFPT calculations at each wavevector (filled dots).

symmetry directions of the BZ (filled dots) at k = � , m = nbeing the highest valence band, and ⌫ the highest optical mode.The selected band and mode are indicated in red in the top andmiddle panels of Fig. 15. The square moduli of electron–phononmatrix elements are averaged over degenerate bands and modes.The dashed blue line shows the standard Wannier interpolation ofRef. [46], and has to be comparedwith the red line that implementsthe polar interpolation of Eq. (13) [60].

Fig. 15 clearly shows the importance of correctly treatingthe long-range interaction in the Wannier interpolation whenstudying polar semiconductors and insulators. This feature isactivated in EPW by using the lpolar input variable.

10.5. Superconductivity inMgB2

The last example presented here focuses on the superconduct-ing properties of magnesium diboride (MgB2). This tutorial can befound in the EPW/examples/mgb2 folder of EPW. An online ver-sion is available at epw.org.uk. This tutorial is based on theworkof Ref. [59] and includes some additional results.

Fig. 16. (Color online) (a) Electronic bandstructure and (b) DOS of bulk MgB2; (c)phonon bandstructure and (d) PDOS at the experimental lattice parameters.Source: The inelastic X-ray scattering experimental data (black dots) at 300 K aretaken from Ref. [149].

Fig. 17. (Color online) Calculated isotropic Eliashberg spectral function ↵2F(!) ofMgB2 (blue solid line) and integrated electron–phonon coupling strength � (blackdashed line).

MgB2 is the prototypical multi-gap phonon-mediated super-conductor, with a critical temperature of Tc = 39 K [150]. Theanisotropic gap arises from the � and ⇡ Fermi-surface sheets [10,151–155]. This superconductor has beenwidely investigated theo-retically [10,90,151,156–167] due to its high Tc. We re-investigatehere MgB2 using EPW to show that its fascinating properties cannow be computed easily and accurately.

The calculations were performed within DFT-LDA [63,68] usingthe Quantum ESPRESSO [62] code. The valence electronicwavefunctions were expanded in a plane-wave basis set using akinetic energy cutoff of 60 Ry and the charge density is integratedon a � -centered 24 ⇥ 24 ⇥ 24 k-point mesh. The experimentallattice parameters a = 5.826 and c/a = 1.142 bohr wereused throughout the calculations [150]. AMethfessel–Paxton first-order smearing [122] of 0.02 Ry was applied. The first-orderpotential perturbation and dynamical matrices were calculatedusing DFPT [42,44,45] on an irreducible 6 ⇥ 6 ⇥ 6 � -centered q-point mesh.

The electronic bandstructure is shown on the top panel ofFig. 16. The associated phonon bandstructure at the bottom ofFig. 16 slightly underestimates the inelastic X-ray scattering datameasured at 300 K [149].

The isotropic Eliashberg spectral function ↵2F(!) calculatedusing Eq. (12), and the associated cumulative electron–phononcoupling strength �(!), are shown in Fig. 17. The spectralfunction shows a dominant peak around 60 meV, and a secondaryone around 86 meV. The cumulative electron–phonon coupling

[Poncé, CPC 209, 116-133 (2016)]8

Page 17: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Convergence of the linewidths in GaP

Linewidth Ãs

BZ

dq�

BZ

|gmn,‹(k, q)|2...Linewidths on a 8 ◊ 8 ◊ 8 k-point grid, for increasing q-point gridsThe Tetrahedron integration converges slower than in SiliconThis is due to the polar divergence of electron-phonon matrix elements

9

Page 18: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Double-grid technique for polar materials : less e�cient...

Linewidth Ãs

BZ

dq�

BZ

|gmn,‹(k, q)|2...Linewidths on a 8 ◊ 8 ◊ 8 k-point gridBlue : 8 ◊ 8 ◊ 8 q-point grid for matrix elements, increasing density forthe energy grid only

10

Page 19: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Double-grid technique for polar materials : special treatment

1·nk

= 2fi~

ÿ

m,‹

BZ

dq�

BZ

| gmn,‹(k, q)¸ ˚˙ ˝gLR

+gSR

|2 ◊ [(n‹q + fmk+q)”(Ánk ≠ Ámk+q + Ê‹q)

+(n‹q + 1 ≠ fmk+q)”(Ánk ≠ Ámk+q ≠ Ê‹q)]

11

Page 20: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Double-grid technique for polar materials : faster convergence

Linewidth Ãs

BZ

dq�

BZ

|gmn,‹(k, q)|2...Linewidths on a 8 ◊ 8 ◊ 8 k-point gridBlue : 8 ◊ 8 ◊ 8 q-point grid for matrix elements, increasing density forthe energy grid only

12

Page 21: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Double-grid technique for polar materials : faster convergence

Linewidth Ãs

BZ

dq�

BZ

|gmn,‹(k, q)|2...Linewidths on a 8 ◊ 8 ◊ 8 k-point gridBlue : 8 ◊ 8 ◊ 8 q-point grid for matrix elements, increasing density forthe energy and g

LR only

12

Page 22: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electronic lifetimes and phonon-limited mobility

Electron mobility in the relaxation-time approximation of the linearized Boltz-mann transport formalism :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

Electronic lifetimes due to the scattering by phonons :

1·nk

= 2fi~

ÿ

m,‹

BZ

dq�

BZ

|gmn,‹(k, q)|2 ◊ [(n‹q + fmk+q)”(Ánk ≠ Ámk+q + Ê‹q)

+(n‹q + 1 ≠ fmk+q)”(Ánk ≠ Ámk+q ≠ Ê‹q)]

Perturbo

No need for Wannier functions or atomic orbitals !

13

Page 23: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Transport properties : do we really need the lifetimes everywhere ?

The mobility contains a derivative of the Fermi-Dirac occupation function :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

14

Page 24: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Transport properties : do we really need the lifetimes everywhere ?

The mobility contains a derivative of the Fermi-Dirac occupation function :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

14

Page 25: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Transport properties : do we really need the lifetimes everywhere ?

The mobility contains a derivative of the Fermi-Dirac occupation function :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

14

Page 26: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Transport properties : do we really need the lifetimes everywhere ?

The mobility contains a derivative of the Fermi-Dirac occupation function :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

14

Page 27: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Transport properties : do we really need the lifetimes everywhere ?

The mobility contains a derivative of the Fermi-Dirac occupation function :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

14

Page 28: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Transport properties : do we really need the lifetimes everywhere ?

The mobility contains a derivative of the Fermi-Dirac occupation function :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

14

Page 29: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Transport properties : do we really need the lifetimes everywhere ?

The mobility contains a derivative of the Fermi-Dirac occupation function :

µe,–—(ÁF , T ) = ≠e

�ne

ÿ

nœCB

⁄dk

�BZvnk,–vnk,—·nk(ÁF , T )ˆf (Ánk, ÁF , T )

ˆÁ

14

Page 30: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Lifetimes in CB pockets : do we really need to sample all q-points ?

Transitions from k to k + q : momentum conservationq-points are also limited by the energy conservation : Ánk ≠ Ámk+q = ±Ê‹qOnly a limited set of q-points contribute and need to be taken intoaccount !

15

Page 31: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Mobility of electrons in Silicon with ABINIT

New implementation in ABINIT :Selects the important k- and q-pointsComputes the lifetimes and velocities for these pointsPerforms the integration to obtain the phonon-limited mobility

16

Page 32: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Mobility of electrons in Silicon with ABINIT

New implementation in ABINIT :Selects the important k- and q-pointsComputes the lifetimes and velocities for these pointsPerforms the integration to obtain the phonon-limited mobility

16

Page 33: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Mobility of electrons in Silicon with ABINIT

New implementation in ABINIT :Selects the important k- and q-pointsComputes the lifetimes and velocities for these pointsPerforms the integration to obtain the phonon-limited mobility

16

Page 34: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Mobility of electrons in Silicon with ABINIT

New implementation in ABINIT :Selects the important k- and q-pointsComputes the lifetimes and velocities for these pointsPerforms the integration to obtain the phonon-limited mobility

16

Page 35: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Mobility of electrons in Silicon with ABINIT

New implementation in ABINIT :Selects the important k- and q-pointsComputes the lifetimes and velocities for these pointsPerforms the integration to obtain the phonon-limited mobility

16

Page 36: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Mobility of electrons in Silicon with ABINIT

New implementation in ABINIT :Selects the important k- and q-pointsComputes the lifetimes and velocities for these pointsPerforms the integration to obtain the phonon-limited mobility

16

Page 37: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Mobility of electrons in Silicon with ABINIT

New implementation in ABINIT :Selects the important k- and q-pointsComputes the lifetimes and velocities for these pointsPerforms the integration to obtain the phonon-limited mobility

16

Page 38: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Mobility of electrons in Silicon with ABINIT

New implementation in ABINIT :Selects the important k- and q-pointsComputes the lifetimes and velocities for these pointsPerforms the integration to obtain the phonon-limited mobility

16

Page 39: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Mobility of electrons in GaP with ABINIT

17

Page 40: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

First part : conclusion

We can compute lifetimes with ABINIT, without using Wannier functionsor atomic orbitalsNote : this was already possible in previous versions of ABINIT

Use of the Tetrahedron method :correct behavior without having to deal with a broadening parameter

faster convergence w.r.t. q points

Double-grid technique :the ” functions require denser grid than the gmn,‹(k, q)

the diverging part of the matrix elements can be computed on a denser grid

Phonon-limited mobility : we compute only what is necessary·nk for few % of k points, gmn,‹(k, q) for few % of q points

Second part : by Henrique Miranda

19

Page 41: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electron-phononself-energyusingplanewaves

gmn,⌫(k,q) = h mk+q|�⌫qVKS | nki

<latexit sha1_base64="hatatm4PPLk1cRq5IG6IXHnlqhg=">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</latexit>

⌃nk(!, "F , T ) =X

m,⌫

Z

BZ

dq

⌦BZ|gmn,⌫(k,q)|2

n⌫q + fmk+q

! � "mk+q + !⌫q + i�+

n⌫q + 1� fmk+q

! � "mk+q � !⌫q + i�

<latexit sha1_base64="OlVS14rD6XSQeP6qN/aQHqXm0U4=">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</latexit>

1

Page 42: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electron-phononself-energyusingplanewaves

•  InterpolatetheDFPTpoten;als–  Removeandaddthelong-rangepart(Fröhlich)–  Reducememoryforpoten;als:boxcutmin,singleprecision,distribu;onoverperturba;onsandq-points

gmn,⌫(k,q) = h mk+q|�⌫qVKS | nki

<latexit sha1_base64="hatatm4PPLk1cRq5IG6IXHnlqhg=">AAAD1XicbVPdbtMwFHYTfkYHrINLbiIG0hBT1Y4LuAFNAyEkboag7cRSKtt12ii2k9pOp8rLHeKWt+EFeAjEC/AGcM1JMmmtW0uxjr7vO+d8PrFJxmNtOp3fDc+/dv3Gza1bze3bd+7utHbv9XWaK8p6NOWpOiVYMx5L1jOx4ew0UwwLwtmAJK9LfjBnSsep/GQWGRsKPJFxFFNsABrtNn6Fkp3TVAgsxzZMSGFDgc2URDYpiuYKOVsiZy4pk8JaWRZwCFYy4RwrlumYQ89K64pEMnNUAmo9LXu60mhV+Nbh5zLBVz7nxahydRBink2xWwzEZJOYMLOmPZd56TEVbILLQ+QbzE2SJCvsBNzLA1AU+1W1GXni6I4/w7Rgc+D3HwGGDeCyUvAyCInCCTM2hNMuzeQifMO4ubLR/wK5F7Wo/gmj1l6n3alWsB50L4O9o0d/f/ycb/87GbX+hOOU5oJJQznW+qzbyczQYmViyhk4yjXLME3whJ1BKLFgemirG1gEjwEZB1Gq4JMmqNDlDIuF1gtBQFnOWrtcCW7k6uM73U30YmhjmeWGSVo3j3IemDQor3gwjhWjhi8gwFTF4D+gU6wwNfAQmjCYrjuG9aB/2O4+ax9+gAkdo3ptoQfoIdpHXfQcHaF36AT1EPVeeWNPeNIf+IX/1f9WS73GZc59tLL87/8Bq4FWfQ==</latexit>

⌃nk(!, "F , T ) =X

m,⌫

Z

BZ

dq

⌦BZ|gmn,⌫(k,q)|2

n⌫q + fmk+q

! � "mk+q + !⌫q + i�+

n⌫q + 1� fmk+q

! � "mk+q � !⌫q + i�

<latexit sha1_base64="OlVS14rD6XSQeP6qN/aQHqXm0U4=">AAAEonichVPRbtMwFM3aAqMD1sEjLxZlaNO6qilIIBDSNCSEeGHT1m2iLpXjOKmV2Eljp1Pl5W/4KX6A7+AmDbCmRVhqenPP8bnnXsdOHHKle70fG7V6487de5v3m1sPHj7abu08vlBRmlA2oFEYJVcOUSzkkg001yG7ihNGhBOySyf4kOOXM5YoHslzPY/ZSBBfco9ToiE13ql9x5Jd00gIIl2DAyczWBA9cTwTZFlzCZzeAqdVUAaZMTIXqAAsR/CMJCxWPISaBbdKEsG0whKgdZDXrFK9ZeLHCj6TAfnrc5aNC1cdTMJ4QqpiQHbWkR2mV7jXMs09RoL5JG8iXWPOD4I4Mz64lx1gZHuF2tTZr/COv8K04AFph/lcGgWHreHtjPuCLFzA5qJWB1runO+j902sUgHShTLCXOoxCCHsJYQad3E8Xwp3uT66KdzcfOs3X+CQeXpYMuUf8+gAeUuDLrtDh6g4EQSEom345wj7BNxD4YT7E93NMVxKd9dJ2yDzH/nDf8qPmvDhuL/HMm61e91esdBqYJdB2yrXybj1E7sRTQWTmoZEqaHdi/XIkERzGjKYc6pYTGhAfDaEUBLB1MgU1ylDu5BxkRcl8JMaFdnbOwwRSs0FNLmbfziqiuXJtZiTkIDpSnXtvRkZLuNUM0kXxb00RDpC+X1FLk8Y1eEcAkITDv4RnRAYtoZbnQ/Gro5hNbjod+2X3f7pq/bRcTmiTeup9czas2zrtXVkfbJOrIFF61t1u/62/q7xvPG5cdo4W1BrG+WeJ9bSauBfigeUDA==</latexit>

1

Page 43: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electron-phononself-energyusingplanewaves

•  InterpolatetheDFPTpoten;als–  Removeandaddthelong-rangepart(Fröhlich)–  Reducememoryforpoten;als:boxcutmin,singleprecision,distribu;onoverperturba;onsandq-points

•  Wavefunc;onsfromNSCFcalcula;on•  Computeandaccumulateon-the-fly(avoidIO)

gmn,⌫(k,q) = h mk+q|�⌫qVKS | nki

<latexit sha1_base64="hatatm4PPLk1cRq5IG6IXHnlqhg=">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</latexit>

⌃nk(!, "F , T ) =X

m,⌫

Z

BZ

dq

⌦BZ|gmn,⌫(k,q)|2

n⌫q + fmk+q

! � "mk+q + !⌫q + i�+

n⌫q + 1� fmk+q

! � "mk+q � !⌫q + i�

<latexit sha1_base64="OlVS14rD6XSQeP6qN/aQHqXm0U4=">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</latexit>

gmn,⌫(k,q) = h mk+q|�⌫qVKS | nki

<latexit sha1_base64="hatatm4PPLk1cRq5IG6IXHnlqhg=">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</latexit> 1

Page 44: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electron-phononself-energyworkflow

WFK(k=q)

DEN

BECS,DDB1 POT1,DDB1 POT2,DDB2

DDB

mrgddb

2

Page 45: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Electron-phononself-energyworkflow

WFK(k=q)

DEN

BECS,DDB1 POT1,DDB1 POT2,DDB2

DVDB DDB

eph

SIGEPH

WFK(k>q)

mrgdv mrgddb

2

Page 46: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

CheckpointandRestart

•  Longcalcula;ons->restartfeature!•  Addi;onalarraywith“done”/”notdone”wri1eninsidetheloopoverk-points

•  Ifthecalcula;oniscrashed,restartwith eph_restart 1!

•  Savecomputa;onal;me!

3

Page 47: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

•  MobilityinthelinearizedBoltzmannequa;on:

BolzmanntransportintheSERTA

µ↵�("F , T ) =e

n("F , T )⌦

X

n

Zdk

⌦BZvnk,↵vnk,�⌧nk("F , T )

✓�@f("nk, "F , T )

@"

<latexit sha1_base64="u8z9qFNrEk1si+jeTXIyuEXgnDU=">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</latexit><latexit sha1_base64="tYjp3Po7n1rEOEFsvpc4J43HQIE=">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</latexit><latexit sha1_base64="zUlmV8rTYu0NxlhKfsTSvnQ4/bw=">AAADnnicbVJda9swFHXsbe2yj6bb417EwiBlabD3sO5lUDooexntoGnDqmBk5ToRlmTXkjOC8H/Z39of2O+Y/MHWOBXYXM49534cbpRxprTv/+653qPHT/b2n/afPX/x8mBw+OpapUVOYUpTnuaziCjgTMJUM81hluVARMThJkq+VPmbNeSKpfJKbzKYC7KULGaUaAuFh71fWMJPmgpB5MJgkElp8JrkkCnGLcFInERl2d9iWcRgQfQqik3STYJI7jo1hFW8x3c7dSDeJp538muZkP+d1mUzzRgTnq1It5glRw+RI9A1VxShaZQNNLLtx1dH6DPCcU6ogdLIFsMXApbEalQhQokwk7olLZrd63xozn6UJaqnrP8RwpoUrWVtqT7mEOvRcSPHGck1IxzFo8rqccMp/+H3zChxzpYrfdQPB0N/4tcP7QZBGwyd9l2Ggz94kdJCgNSUE6VuAz/Tc1N1oBzsVoWCjNCELOHWhpIIUHNTn1KJ3llkgeI0t5/dukbvKwwRSm1EZJmV06qbq8AHc1FOEtCd7jr+NDdMZoUGSZvmccGRTlF1q2jBcqCab2xAaM7s/IiuiDVS24uujAm6NuwG1x8mgT8JvvvD07PWon3njfPWGTmBc+KcOl+dS2fqUHfPPXY/uice8s69b95FQ3V7rea1s/W82V+6VDRd</latexit>

4

Page 48: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

•  MobilityinthelinearizedBoltzmannequa;on:

•  Life;mesfromimaginarypartofself-energy:

BolzmanntransportintheSERTA

µ↵�("F , T ) =e

n("F , T )⌦

X

n

Zdk

⌦BZvnk,↵vnk,�⌧nk("F , T )

✓�@f("nk, "F , T )

@"

<latexit sha1_base64="u8z9qFNrEk1si+jeTXIyuEXgnDU=">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</latexit><latexit sha1_base64="tYjp3Po7n1rEOEFsvpc4J43HQIE=">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</latexit><latexit sha1_base64="zUlmV8rTYu0NxlhKfsTSvnQ4/bw=">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</latexit>

⌃nk(!, "F , T ) =X

m,⌫

Z

BZ

dq

⌦BZ|gmn,⌫(k,q)|2

n⌫q + fmk+q

! � "mk+q + !⌫q + i�+

n⌫q + 1� fmk+q

! � "mk+q � !⌫q + i�

<latexit sha1_base64="qn65Tn8puE9xC4BkLo4xNFHB84c=">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</latexit>

1

⌧nk= ⇡

X

m,⌫

Z

BZ

dq

⌦BZ|gmnk,⌫q|2 ⇥ [(n⌫q + fmk+q)�("nk � "mk+q + !⌫q)+

(n⌫q + 1� fmk+q)�("nk � "mk+q � !⌫q)]<latexit sha1_base64="yeoN4q1PKiMtC+t9dZKZBmk45WU=">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</latexit> 4

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SpeedingupimaginarypartofSE

DoublegridEigenvaluesdensegrid:1.SKWinterpola;onbs_interp_kmult!2.NSCFcalcula;ontolwfr 1e-15!irdwfkfine!getwfkfine!

5

Page 50: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

SpeedingupimaginarypartofSE

DoublegridEigenvaluesdensegrid:1.SKWinterpola;onbs_interp_kmult!2.NSCFcalcula;ontolwfr 1e-15!irdwfkfine!getwfkfine!

Tetrahedronintegra;oneph_intmeth 2!

5

Page 51: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

SpeedingupimaginarypartofSE

DoublegridEigenvaluesdensegrid:1.SKWinterpola;onbs_interp_kmult!2.NSCFcalcula;ontolwfr 1e-15!irdwfkfine!getwfkfine!

Tetrahedronintegra;oneph_intmeth 2!

QandK-pointfilteringkerange!

sigma_erange!

5

Page 52: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

SpeedingupimaginarypartofSE

Tetrahedronintegra;oneph_intmeth 2!

5

Page 53: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Tetrahedronmethod

zcutsmalltoreproducethelimit,largeenoughtoavoidnumericproblems

Doubleconvergenceγandq

⌃nk(!, "F , T ) =X

m,⌫

Z

BZ

dq

⌦BZ|gmn,⌫(k,q)|2

n⌫q + fmk+q

! � "mk+q + !⌫q + i�+

n⌫q + 1� fmk+q

! � "mk+q � !⌫q + i�

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6

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Tetrahedronmethod

zcutsmalltoreproducethelimit,largeenoughtoavoidnumericproblems

Doubleconvergenceγandq

tetrahedronlinearinterpola;onoftheeigenvaluesandmatrixelements

Convergeqonly

1

⌧nk= ⇡

X

m,⌫

Z

BZ

dq

⌦BZ|gmnk,⌫q|2 ⇥ [(n⌫q + fmk+q)�("nk � "mk+q + !⌫q)+

(n⌫q + 1� fmk+q)�("nk � "mk+q � !⌫q)]<latexit sha1_base64="yeoN4q1PKiMtC+t9dZKZBmk45WU=">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</latexit>

6

Page 55: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Tetrahedronmethod101

•  TessellatetheBrillouinZoneusingtetrahedrons

•  Simpleanaly;calexpressionsdependontheenergiesatthesummits

⇡I(!) =

Z

BZFk�(! � "k)

<latexit sha1_base64="3N4V6Au2ju/H/F0BIgeVl8R2s1w=">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</latexit>

[1]A.H.MacDonald,S.H.Vosko,andP.T.Coleridge,JournalofPhysicsC:SolidStatePhysics12,2991(1979)[2]P.E.Blöchl,O.Jepsen,andO.K.Andersen,Phys.Rev.B49,16223(1994)Manyothers...AlsodicussionwithAtsushiTogo

⇡I(!) = ⌦tetra

NtetraX

i=1

gi(!)4X

s=1

Iis(!)Fis

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7

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Oldtetrahedronimplementa;on1.  Createlistofalltetrahedra2.  Hashandsort3.  Reducetounique

(Doublememoryalloca;on)

memorytraceabinit--abimem-level3abimem.pyplot<file>GaAs72x72x72kandqgrid

8

Page 57: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Newtetrahedronimplementa;on1.  Generate1tetrahedronandhash2.  Ifnewstore,ifalreadyexistsaddmul;plicity3.  Repeatforalltetrahedra(Lowermemoryfootprint)

memorytraceabinit--abimem-level3abimem.pyplot<file>GaAs72x72x72kandqgrid

8

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•  MobilityinthelinearizedBoltzmannequa;on:

BolzmanntransportintheSERTA

µ↵�("F , T ) =e

n("F , T )⌦

X

n

Zdk

⌦BZvnk,↵vnk,�⌧nk("F , T )

✓�@f("nk, "F , T )

@"

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4

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Groupvelocitymatrixelements

•  Before:DFPTrunonFBZforeach3direc;onsandreaddiagonalmatrixelementsfrom1WFfiles–  LotsofIOandwaste!

10

vnk,↵ = h nk|@k,↵H| nki<latexit sha1_base64="XHPNsxVLD184LAWqCazkSXiNrpA=">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</latexit>

Page 60: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Groupvelocitymatrixelements

•  Before:DFPTrunonFBZforeach3direc;onsandreaddiagonalmatrixelementsfrom1WFfiles–  LotsofIOandwaste!

•  Computeon-the-flyusingnc_ihr_comm(chiinGW)–  Onlyworksfornorm-conserving–  Notmostefficientforoff-diagonalmatrixelements

vnk,↵ = h nk|p̂↵ + i[VNL, r̂↵]| nki<latexit sha1_base64="av8P7d5F0aV0kCw8mllFXZRLOOE=">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</latexit><latexit sha1_base64="av8P7d5F0aV0kCw8mllFXZRLOOE=">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</latexit><latexit sha1_base64="av8P7d5F0aV0kCw8mllFXZRLOOE=">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</latexit><latexit sha1_base64="av8P7d5F0aV0kCw8mllFXZRLOOE=">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</latexit>

10

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Groupvelocitymatrixelements

DFPTrou;nes:load_spin_hamiltonianload_spin_rf_hamiltoniangetgh1c_setupgetgh1c

11

vnk,↵ = h nk|@k,↵H| nki<latexit sha1_base64="XHPNsxVLD184LAWqCazkSXiNrpA=">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</latexit>

Page 62: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Groupvelocitymatrixelements

DFPTrou;nes:

load_spin_hamiltonian

load_spin_rf_hamiltonian

getgh1c_setup

getgh1c

Objectdkkop_t:ddkop_setup_spin_kpoint

ddkop_apply

ddkop_get_velocity

Canbereusedindifferentcontexts:transport,chi,

interpola;on,etc…

WFsinmemory->recompu;ngbe1erthanIO

SameforEPHmatrixelements11

vnk,↵ = h nk|@k,↵H| nki<latexit sha1_base64="XHPNsxVLD184LAWqCazkSXiNrpA=">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</latexit>

Page 63: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Transportcomputa;ondriver

µ↵�("F , T ) =e

n("F , T )⌦

X

n

Zdk

⌦BZvnk,↵vnk,�⌧nk("F , T )

✓�@f("nk, "F , T )

@"

<latexit sha1_base64="u8z9qFNrEk1si+jeTXIyuEXgnDU=">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</latexit><latexit sha1_base64="tYjp3Po7n1rEOEFsvpc4J43HQIE=">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</latexit><latexit sha1_base64="zUlmV8rTYu0NxlhKfsTSvnQ4/bw=">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</latexit>

12

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Transportcomputa;ondriver

µ↵�("F , T ) =e

n("F , T )⌦

X

n

Zdk

⌦BZvnk,↵vnk,�⌧nk("F , T )

✓�@f("nk, "F , T )

@"

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µ↵�("F , T ) =e

n("F , T )⌦

ZK(!, "F , T )

✓�@f(!, "F , T )

@"

◆d!

<latexit sha1_base64="If4RKd4y8pHl8pp7dChC6k4JkVA=">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</latexit>

K(!, "F , T ) =X

n

Zdk

⌦BZvnk,↵vnk,�⌧nk("F , T )�(! � "nk)

<latexit sha1_base64="Zn64bznB2Q5DwEgFh/Y+rUd2Mgs=">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</latexit>

•  Canusethetetrahedronmethod!12

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Transportcomputa;ondriver

•  Newtransportcomputa;ondriverstar;ngfrom*_SIGEPH.ncfile

•  Computedautoma;callyaxersigmaphwheneph_task -4!

•  Computeconduc;vity,mobility,Seebeck.•  Writeto*_TRANSPORT.ncnetcdffile•  AnalyzeresultsusingAbipy

12

Page 66: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Transportcomputa;onworkflow

WFK(k=q)

DEN

BECS,DDB1 POT1,DDB1 POT2,DDB2

DVDB DDB

SIGEPH

mrgdv mrgddb

13

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Transportcomputa;onworkflow

WFK(k=q)

DEN

BECS,DDB1 POT1,DDB1 POT2,DDB2

DVDB DDB

SIGEPH

WFK(k>q)

mrgdv mrgddb

TRANSPORT

WFKFINE(k>q)

KERANGE

13

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Unittests

•  Testindividualrou;nesoutsideoftheirnormalscope95_drive/m_unittests.F90!

•  Twousecasessofar:– Newtetrahedronrou;nes(realpartofSE)–  Implementsymkptandlistkkrou;neswithbe1erscalingforourapplica;ons

•  Workinprogress…

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Page 69: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Lessonslearned•  IOisbad!LotsofIOwillquicklybecomethebo1leneckofthecomputa;on

•  FLOPSarecheapRe-compu;ngisbe1erthanIO

15

Page 70: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Lessonslearned•  IOisbad!LotsofIOwillquicklybecomethebo1leneckofthecomputa;on

•  FLOPSarecheapRe-compu;ngisbe1erthanIO

•  TreatintegralsnicelyWhenperformingdifficultBZintegralsprefertetrahedron(orbe1er)

15

Page 71: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Lessonslearned•  IOisbad!LotsofIOwillquicklybecomethe

bo1leneckofthecomputa;on

•  FLOPSarecheapRe-compu;ngisbe1erthanIO

•  TreatintegralsnicelyWhenperformingdifficultBZ

integralsprefertetrahedron(orbe1er)

•  SavememoryAimto2GBpercore,distribute

memory,recompute,avoidunnecessaryalloca;ons

15

Page 72: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Lessonslearned•  IOisbad!LotsofIOwillquicklybecomethe

bo1leneckofthecomputa;on

•  FLOPSarecheapRe-compu;ngisbe1erthanIO

•  TreatintegralsnicelyWhenperformingdifficultBZ

integralsprefertetrahedron(orbe1er)

•  SavememoryAimto2GBpercore,distribute

memory,recompute,avoidunnecessaryalloca;ons

•  CheckpointisgoodSavework,allowrestart

15

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Furtherwork

1.  SpecialtreatmentofFröhlichmatrixelements2.  Improveconvergenceofmobilitywithk-points

usingquadra;ctetrahedronmethod3.  Fasterandscalablek-pointsmachinery:

symkptandlistkk!

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Page 74: Computing the intrinsic mobility of electrons and holes in semiconductors · 2019. 12. 5. · Computing the intrinsic mobility of electrons and holes in semiconductors Part I : concepts

Acknowledgments

Super

Post :

Funding :

Geo�roy Hautier

Henrique Miranda

F.R.S.-FNRS

Gian-Marco Rignanese

Matteo Giantomassi

Institute :

Institute of Condensed Matterand Nanosciences

18

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Thankyou!