comparison standard and graded substrate, simulation with ise-tcad
DESCRIPTION
Comparison standard and graded substrate, simulation with ISE-TCAD. Andrei Dorokhov, May 14 , 2007. Doping profiles and the geometry. Standard (uniformly doped) substrate. Doping profiles and the geometry. Graded (linearly doped) substrate. - PowerPoint PPT PresentationTRANSCRIPT
Comparison standard and graded substrate,
simulation with ISE-TCAD
Andrei Dorokhov,May 14 , 2007
Particle energy loss distribution and one pixel geometry
Pwell
Nwell
Nepi
Pepi
Electron, 2keV
SiO2, 1nm
Backplane
Backplane One pixel layout
TOX
Energy deposition
Electrons collection
Electrons density (saturated color scale, in the n-well the actual density much larger)
Standard and Graded
Resultscce %,standard
cce %, graded
90% collection time ns, standard
90% collection time ns, graded
hit pixel 5.8 26 143 16
cluster 2x2 13 32 192 20
cluster 3x3 24 40 206 22
cluster 5x5 49 41 227 23
Conclusions
1.Charge collection in the graded substrate much faster (~10 times), and in the order of 16-23 ns
2.In the graded substrate the charge collection in 5x5 cluster smaller by 20% but in the seed pixel ~5 times larger -> much smaller spread