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\§URFACE MODIFICATION OF TITANIUM DIOXIDE AND SYNTHESIS OF NON—ELECTROACTIVE COATINGS BY ELECTROCHEMICAL POLYMERIZATION/· by ° Rathnapala S.ÜVithanage /2 Dissertation Submitted to the Faculty of ·Virginia Polytechnic Institute and State University in Partial Fulfillment of the Requirement for the degree of DOCTOR OF PHILOSOPHY in , Chemistry Approved: 1 ,/ /7 i.' H„g . Finklea · / /lr?/SE L /7 ,7p { {Z. ' { r g. ' ‘/ (Qu: H. M. Bell R. E. Dessy g \ - \ Ü A , U ° \, N .··>x · J. G. Mason L. T. Tay or Blacksburg, Virginia May 1985

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Page 1: COATINGS BY ELECTROCHEMICAL POLYMERIZATION/· · 2020. 1. 17. · The photocorrosion of small bandgap ¤—type semiconductor electrodes is a serious impediment to the development

\§URFACE MODIFICATION OF TITANIUM DIOXIDEAND SYNTHESIS OF NON—ELECTROACTIVE

COATINGS BY ELECTROCHEMICAL POLYMERIZATION/·

by °

Rathnapala S.ÜVithanage/2

Dissertation Submitted to the Faculty of·Virginia Polytechnic Institute and State University

in Partial Fulfillment of theRequirement for the degree of

DOCTOR OF PHILOSOPHY

in

, Chemistry

Approved:

1 ,/ /7

i.'H„g . Finklea ·

//lr?/SE L

/7 ,7p{{Z.

' { r g. '‘/

(Qu:

H. M. Bell R. E. Dessy g\

- \ Ü A , U

° \, N .··>x ·J. G. Mason L. T. Tay or

Blacksburg, Virginia

May 1985

Page 2: COATINGS BY ELECTROCHEMICAL POLYMERIZATION/· · 2020. 1. 17. · The photocorrosion of small bandgap ¤—type semiconductor electrodes is a serious impediment to the development

SURFACE MODIFICATION OF TiO2 AND SYNTHESIS OF NON—ELECTROACTIVE .

äi COATINGS BY ELECTROCHEMICAL POLYMERIZATION

E

Xi}?;„ (ABSTRACT)

> byRathnapala S. Vithanage

The objective of this project was the modification of TiO2

electrodes with various silanes in order to evaluate the stability of

modified layers when they are used on photoelectrodes in SEMICONDUCTOR

LIQUID—JUNCTION SOLAR CELLS (SLJSC). To determine the nature of the

· .eaccivity of surface hydroxyl groups towards different .silanes, a

_ surface IR study was carried out on Ti02 powders. The powder (TiO2)

was pressed into a pellet and subjected to reactions with various

silanes under different reaction conditions. All of these reactions b

were carried out in a vacuu line under very anhydrous conditions in

order to prevent polymerization of the silanes. This study provided an

understanding of the reactivity of diffezenc silanes towards surface

·hydroxyl groups of TiO2 and the best reaction conditions for this

purpose.

With this information in hand we studied the Ti02 (rutile) single

crystal electrodes. These electrodes were subjected to reaction with

silanes under the same conditions as the powders. Then the modified

surface was studied using ESCA. These electrodes were subsequently

subjected to phocoelectrochemical conditions (photocurrent generation)

and were reexamined using ESCA in order to evaluate the stability of

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the modified layer. A reaction scheme which was devised to induce

crosslinking in the modified layer was shown to enhance the ustability

of the surface bound silaue during the photocurrent generation.

In order to form more homogeneous modified surfaces

electrochemically derived polymer coatings were synthesized from

divinylbenzene, 4-vinylpyridine, N—methyl—4-vinylpyridinium salts, and

phenol. Except for polymers formed from N·methyl—4—vinyl pyridinium _

salts, other coatiugs were shown to be neutral. An anomalous pre—wave,

and potential—induced polymer swelling and shrinking phenomena were

observed in these coatings.

The photocorrosion of small bandgap ¤—type semiconductor

electrodes is a serious impediment to the development of efficient and

durable conversion (photoelectrochemical) devices. Our objective in

this investigation was to develop newer modified surfaces that are

useful for the inhibition of this photocorrosion, and enhance the

performance of n-type small bandgap semiconductors in the

photoelectrochemical systems.

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This dissertation is

dedicated to my late Father

and beloved Family.

iv

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ACKNOWLEDGEMENTS

_ I would like to express my gratitude to the following persons for

their support:

To Dr. Harry O. Finklea for his encouragement and guidance, which

greatly helped me complete this work in a relatively short period of

time.

To my colleagues and friends, for their cooperation.

To the department of chemistry at VPI and Diamond Shamrock

Corporation for their financial support during the period of study.

To for typing the original draft, and Mrs. Harris for the typing

of the final draft. .

Finally, to the members of my family for their love, patience,

understanding and moral support during these long and trying years.

. V >

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TABLE OF CONTENTS

Page

1I I I I„I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I

IChapter2. INFRARED SPECTROSCOPY OF SILANE MODIFIEDTiO22I

I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I6

2.II.B Reactious of silane withsilica2.IV

Data and Interpretation ...................................172.IV.A Reactious of TiO2 with silanes •.....„..........„.....212.IV.B Reactions with trimethylclorosilane ..................22 —

2 I I I I I I I I I I I I I I I I I I27

2.IV.D Steric reasons against trifunctional reactions with

ZIIVIE I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I37

2.IV.F Reactious of methoxysilanes wich TiO2 ••••••••••••••••38

2 I I I I I I I I I I I I I I I I I I I I I I I I I I I IS

of

Reactions of methanol with TiO2 ......................672 I I I I I I I I I I I I I I I I I I I I I I I I I I I I7O

2.IV.K Sumary of percentage OH loss ........................76

Chapter 3. PHOTOELECTROCHEMICALSYSTEMS3.II

Semiconductors3.IV

Band bending insemicouductors3.VI

Semiconductor/electrolyte interface ........................gg3 IVI IA I I I I I I I I I I I I I I I I I I I I I I I I I I I

I3IVIIB3.VII

Blocking behavior of semiconductors ........................gg

vi

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I

TABLE OF CONTENTS (Continued)

V Page

3.VIII Efficient PEC systems .................................... 993.VIII.A Bandgap .. ........................................ 993.VIII.B Bandgap location ................................. 993.VIII.C Stability ........................................ 1003.VIII.D Doping level ..................................... 1003.VIII.E Redox couple ..................................... 101

3.IX Problems associated with the PEC devices ................. 1013.X Survey of chemically modified semiconductor electrodes ... 1033.XI Experimental ............................................. 111

73.XI.A Electrode preparation ........................... 1113.XI.B Silanization .................................... 1113.XI.C Electrochemistry ................................ 112

' 3.XI.D X-ray photoelectron spectroscopy ................ 1123.XII Results and Discussion .............................0...... 114

3.XII.A XPS of modified TiO2 ............................ llß3.XII.B Photocurrent generation process ................. 1133.XII.C Criteria for silane layer stability ............. 1193.XII.D Direct silanization ............................. 1223.XII.E Crosslinking scheme ............................. 1233.XII.F Stability of crosslinked modified layers ........ 1303.XII.G Silane decomposition mechanisms ................. 132

3.XIII Conclusion ..........................................._.... 139

Chapter 4. ELECTROCHEMICAL POLYMERIZATION .......................140-194

4.I Introduction ............................................. 1404.II Review of previous work .................................. 145

4.II.A Characteristics of surface bound redox species ... 154' 4.III Experimental ............................................. 156

4.III.A Synthesis ........................................ 1564.III.B Electrochemistry ................................. 156

4.IV Results and discussion ................................... 1584.IV.A Vinyl polymerization ............................. 1584.IV.B Polymerization of phenol ......................... 1614.IV.C Stability of electrochemically formed radicals ... 1544.IV.D Polymerization of DVB ............................ 1654.IV.E Coated electrodes in ferrocene electrolytes ...... 1724.IV.F 4-vinylpyridine .................................. 1814.IV.G Phenol ........................................... 1844.IV.H N—methyl-4-vinylpyridinium salts ................. 1844.IV.I Diffusion of solutes at rotating disk electrode .. 188

4.V Conclusion ............................................... 194

Chapter 5. CONCLUSION ...........................................195-196

REFERENCES .......................................................197-203

APPENDIX ......................................................... 204-205

vii

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TABLE OF CONTENTS (continued)

page

I|I|IO|O||•III•IIO|IIOIOIIOOOIIAIOOOOIIIOOIIODIOOIIIIIIIIIOIIOZOG

viii

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LIST OF TABLES

Table Page

I Infrared band assignments of surface OH groups of _I- ‘ TiO2 •••••••••••••••••••••••••••••..•.••.••••••••••• 8

II IR data of Ti02 and D20 exchange ...................

18IIIReaction of TiO2 with trimethylchlorosilane ........ 24

IV -·V Reaction of Ti02 with trimethylchlorosilane ........28-29

VI — VII Reaction of Ti02 with dimethyldichlorosilane .......30-32

IX - XI Reaction of TiO2 with trichloromethylsilane ........33-35

XII - XIV Reaction of TiO2 with tetrachlorosilane ............39-41

XV - XVII Reaction of Ti02 with trimethylmethoxysilane .......46-48

XVIII - XX Reaction of Ti02 with dimethyldichlorosilane .......49-51

XXI - XXIII Reaction of Ti02 with methyltrimethoxysilane .......52-54

XXIV - XXVI Reaction of Ti02 with tetramethoxysilane ...........55-57_

XXVII - XXIX Reaction of TiO2 with hexamethyldisilazane .........60-65

XXX - XXXI Reaction of TiO2 with hydrogen chloride ............67-68

XXXII — XXXIV Reaction of Ti02 with methanol .....................70-72

XXXV — XXXVI Reaction of Ti02 with ammonia ......................74-75

XXXVIIa,b Percentage OH peak attenuation after chemicalmodification .......................................76-77

I XXXVIII Surface coverage data .............................. 81

XXXIX XPS data of a control electrode ....................121

XXXX Redox potentials of aromatic monomers ..............150 Rl

ix

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LIST OF FIGURES

Page

Figure (2): IR Spectra of clean Ti02 and D20 exchanged TiO2 ..... 19

Figure (3): IR_spectra of Ti02 reacted with dimethyl-dichlorosilane ...................................... 22

Figure (4): IR spectra of Ti02 reacted with silicon tetrachloride 38 _

Figure (S): Contrast of chlorosilane modification vs.methoxysilane modification .......................... 43

Figure (6): Contrast of tetramethoxysilane-reacted TiO2 atdifferent reaction stages ........................... 44

Figure (7): IR spectra of TiO2 modified with HMDS ............... 59

Figure (8): Energy level diagram for an intrinsic semiconductor . 87

Figure (10): Band bending situation of a semiconductor ........... 90

.Figure (11): Positions of conduction and valence band edges of

1Figure(12): Regenerative SLJSC using a n-type semiconductor ..... 95

Figure (13): Energy situation in a SLJSC ......................... 97

Figure (14): Photoelectrochemical experimental setup ............. 113

Figure (15): XPS- traces of Ti02 before and after derivatization

Figure (16): XPS- traces of TiO2 before and after derivatization[C(1s) and Si(2p) peaks] ............................ 117

Figure (17): Cyclic voltammetric curve of Ti02 photoanode in 0.5M

. Figure (18): Bar graphs of SiCla—derivatized Ti02 electrodesbefore and after photocurrent generation ............ 123

Figure (19): Bar graphs of Me2SiCl2-derivatized Ti02 electrodes .. 124

Figure (20): Bar graphs of MeSiCl3—derivatized Ti02 electrodes ... 125

x

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LIST OF FIGURES (Continued)

Page

:.Figure (21): Crosslinking scheme for Ti02 modification ........... 129

Figure (22): Bar graphs of SiCl4/Mezsiclz-derivacized[crosslinked] Ti02 electrodes •„••.................•. 131

Figure (23): Bar graphs of MeSi(OMe)3-derivatized [crosslinked]

~Figure (24): Bar graphs of Si(OMe)4-derivatized [doublecrosslinked] TiO2 electrodes ..................„..... 134

Figure (25): Bar graphs of MeSiCl3-derivatized [doublecrosslinked] Ti02 electrodes .......„.......„..•„.... 135

Figure (26): Bar graphs of MeSi(OMe)3-derivatized [doublecrosslinked] TiO2 electrodes ........................ 136

Figure (27): Electrochemical deposition of DVB (10 mM) in thepresence of ferrocene ...........„.................•„ 166

Figure (28): Electrochemical deposition of DVB (10 mM) ........„.. 168

Figure (29): Electrochemical deposition of DVB (80 mM) ........... 169

Figure (30): Cyclic voltammetry of poly-DVB coated electrode (10

Figure (31): Cyclic voltammetry of a poly-DVB coated electrode

Figure (32): Contrast of cyclic voltammetric behavior of a poly-DVB coated electrode (100 mM) in 10 mM Fe2+/0.SM

Figure (33): Cyclic voltammetry of Br' trapped in a poly-DVBcoated electrode ...........................„........ 180

Figure (34): Electrochemical deposition in 100 mM 4-vinylpyridine. 182

Figure (35): Cyclic voltammetry of a poly 4-vinylpyridine coatedelectrode in 1 mM hydroquinone ....„...„............„ 183

Figure (36): Electrochemical deposition of phenol ................ 185

Figure (37): Cyclic voltammetry of a poly—phenol coated electrode

xi

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LIST OF FIGURES (Continued)

Page,

Figure (38): Electrochemical deposition of N—methyl-4-

Figure (39): Cyclic voltametry of electrostatically boundFe(CN)6A' on poly-N—methyl-4-vinylpyridinium—coated

Figure (40): Scan rate study of electrostatically-bcund Fe(CN)64'0n poly—N-methyl-4—vinylpyridinium coated electrode .190

Figure (41): Rotating disk voltammetric plots of clean Pt and DVB-coated electrodes in the presence of 1 mM ferrocene .193

xii

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Chapter 1

INTRODUCTION

Chemical modification of electrodes is a relatively new research area

in electrochemistry. The interest in attachment of molecules onto

electrode surfaces is due to several reasons; most importantly

attachment of molecules of known properties can bring about interesting

changes in the properties of the electrode, in a more predictable, and

externally controllable manner. There are several different approaches

which have been successfully employed in the modification of electrode

surfaces:

(a) chemisorption: Some species tend to strongly adsorb onto the·

electrode surface; e.g., organic molecules containing double bonds

which are hydrophobic, on surfaces such as C, Pt, from aqueous

solutions (1).

(b) The reaction of oxidized metal oxides with silane reagents,

(Za). This process yields a monolayer of silane on the electrode

surface._ The chemical functionalities present in the modified layer

may be subject to further modifications, which in turn induces

additional changes of electrode properties.

(c) Coating of electrode with polymer layers (2b), by either (i)l

simple dip coating, which results a multilayer of polymer on the

electrode surface, or (ii) formation of polymers in—situ, i.e.

polymerization can be induced by electrochemical or other (rf plasma)

means.

These electrodes may be characterized by several different methods.

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2

As the amount of substance on the modified electrode is very small,

rather sensitive techniques are required to detect its presence as well

as to evaluate its chemical and physical properties. Electrochemical

methods are very simple and present adequate sensitivity in order to

detect redox active species on the surface. Non—redox active species

may be detected by an indirect electrochemical means. Electron

spectroscopic methods can be used to detect and identify the elements

present on the electrode surface and to a certain extent their chemical

nature as well. More detailed molecular level information can be

obtained by UV, IR, visible and Raman spectroscopic methods either in

transmission mode or reflection mode depending on the nature of the

substrate.

The modified electrodes have several different interesting

applications in electrochemistry: a) these modified surfaces can act

as a catalyst, by mediating the electron transfer between the electrode

and the solution species, including a chemical reaction which would not

take place at the naked electrode; b) modified electrodes in the cells

can be used as display devices if the immobilized molecules change

color or emit light when they are electrically excited; c) the

immobilized species with a charge can be employed to preferentially _

extract solution species, and subsequently be detected

electrochemically. They may have some ion—selective properties which

may be used in potentiometric applications. Presently, there are

several reports in the literature indicating the applications of

modified electrodes as "proton" sensors, d) these modified surfaces

have been shown to be very useful in the prevention of photocorrosion

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3

in photoelectrochemical cells. Both the covalently attached surfaces

as well as polymer modified surfaces have been employed in this regard

with a reasonable success.

There are a number of research groups who are actively pursuing

these goals and more and more interesting applications· of modified

electrode surfaces will be uncovered in the forseeable future.

As it has been already indicated, our objective in this

investigation was to develop newer surfaces which are useful in small

· bandgap semiconductor (n-type) photoelectrochemical systems. In the

first part of this project we have studied the reactivity of different

silanes towards the surface hydroxyl groups of TiO2 by infra—red

spectroscopy. Secondly, Ti02 single crystal surfaces were modified

with these silanes and the stability of these modified layers has been

ustudied by X-ray photoelectron spectroscopy. In the final part of the

project electrochemical polymerization techniques have been employed as

a means to synthesize homogeneous modified layers.

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Chapter 2

INFRARED SPECTROSCOPY OF SILANE MODIFIED TiO2

2.I Introduction

The importance of the characterization of surface structure has

been recognized for decades, in order to understand the adsorption

processes that take place at interfaces. In the late fifties and early

sixties, due to lack of the development of suitable techniques, surface

structure was understood imperfectly on a molecular level and the

progress was slow. But in the last 10-15 years due to the advent of

newer techniques this area of research has enjoyed a reasonably fast

growth. The study of the gas—solid interface has drawn the interest of‘

both industrial and academic scientists because of the tremendous

potential of the "Surface Catalytic Process". The capability of

surfaces to selectively accelerate favorable chemical reactions is the

basis for many industrial chemical processes. Therefore, understanding

of the adsorption, kinetics, and chemical reactions taking place at

surfaces at molecular or atomic level is absolutely important. The

application of infrared spectroscopy in surface studies has aided

scientists to understand many surface reactions, to identify adsorbed

reaction intermediates, and to propose mechanisms. During the last

decade or so it has had a tremendous impact in the enhancement of

knowledge and understanding of "Surface Processes". This is amply

demonstrated by the vast number of papers that have been published in

SA

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. 5‘

this field (3,&,5). The characteristic vibrations of molecules can be

used to study the structure and bonding of surface-bound species.

Primarily transmission mode studies has been employed at the earlier

stages of these studies. Lately the application of FTIR and

reflection—absorption methods have considerably enhanced the potential

of this technique (6,7). The surfaces carry only very small amount of

sample. Therefore, it is a challenge to obtain sufficient sensitivity

to extract adequate information on surface-bound species. This problem

has been overcome by employing substrates with high surface area which

are transparent to infra-red radiation.

During physisorption, the bond between the surface and the adsorbed

species is a weak one (Van—der—Waal type), and hence the changes in the·

absorption spectra of gaseous physisorbed species is minimal. In the

second type of interaction, chemisorption, adsorbates undergo strong

interaction with the surface. They may be dissociated, non-dissociated

or reactive, thereby sometimes causing substantial changes in the

absorption spectrum of the species concerned. This enables one to

differentiate between chemisorption and physisorption at a surface in

many

instances.Infra-red spectroscopy yields several advantages over electron

spectroscopic techniques, in surface characterization (6):

1. It provides detailed atomic and molecular level information.

- 2. Samples are not subjected to destruction or alteration in the

process of obtaining information.

4. It is relatively inexpensive compared to most other surface

4 techniques.

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6

Our objective in this portion of the project was to obtain detailed

molecular level information of the gaseous phase surface reactions of

silanes with TiO2. The information sought by these studies is:

1. The reactivity of different types of OH groups on the surface.

2. The reactivity of different silane reagents towards surface OH

groups.

3. The extent of surface coverage obtained.

4. The thermal and hydrolytic stability of modified layers.

S. The effect of reaction variables on the final modified surface.

2.II.A Literature Review .

LInfra-red spectroscopy has been employed extensively in the

characterization of the properties of oxide surfaces. In the past

there has been considerable interest in the surface properties of

alumina and silica, most probably due to their catalytic properties.

The interest in surface properties of TiO2 is due to a) its use as an

adsorbant with regenerative surface properties, and b) the

photosensitivity of TiO2 electrodes. But the literature on surface

characterization studies of TiO2 is relatively small compared to other

oxides (e.g., silica, alumina). There are several British research

groups who have independently carried out detailed studies on surface ·

characterization of TiO2.

Jackson and Parfitt (8) have studied three different types of

rutile surfaces with the objective of understanding their thermal

dehydration and rehydration properties, and also they have attempted to

correlate the observed properties to the interaction of gaseous H20

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7

molecules with the underlying crystallographic cleavage surface. It is

assumed that low index crystallographic planes dominate the surface of

polycrystalline powders because in these planes the titanium ions

remain maximally coordinated. One such plane on rutile is the (110)

plane. The (110) cleavage plane of rutile results in loss of

coordination of bothTi“+

and O2' ions, yielding sites for adsorption

of water molecules. The water molecules dissociate to leave OH groups

at metal ion sites and protons at oxide ion sites. The OH groups at

metal ion sites have monodentate attachment (terminal groups), whereas

oxide sites are considered bidentate0H’s

(bridging type). The IR

assignments of the OH bands have been based on the observed thermal

properties of these groups, which are presented in Table I.

Jones and Hockey (9) also have conducted a detailed study of rutile

surfaces with the objectives of understanding the covalent and ionic

nature of surface OH species and coordination properties of surface

cations. They have observed seven absorption bands due to hydroxyl and

absorbed H20 species, six of them being in the 3000-4000 cm°1 region

and the seventh around 1600 cm°l. The IR absorption assignments are

shown in Table I.

In the subsequent report, Jones and Hockey (10) attempted to .

correlate observed surface OH bands to interactions of H20 molecules

with surface planes of rutile. The authors have chosen (110), (101),

and (100) as likely cleavage planes of rutile. The reasons for

selection of these planes as surface planes for rutile powder is

(a) Rutile is known to crystallise so that the majority (982) of the

crystal surface is composed of the planes (110), (101) and (100), with

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8 .

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9

the (110) plane being 60% of the total area and the latter two planes

(101), (100), equally 20% each (11). ·

(b) Electron micrographic studies of crystalline rutile powders that

were used in this work (10) showed morphological resemblance to large

rutile crystals.

(c) For energetic reasons crystal cleavage occurs so that the surface

cations have coordination numbers as close as that in the bulk of the

crystal. In the case of Ti02, Ti ions have a co-ordination number six.

In the (101) and (100) planes the surface cations have a co—ordination

number of five with respect to oxide ions and in the (110) plane equal

number of cations have co—ordination numbers five and four with respect

to oxide anions.

Dissociative addition of a water moleule forms a terminal OH ion

above row A/Ti“+ ions and forms a bridging OH between pairs of cations

on row B. The pentacoordinate Ti ions on the planes (101) and (100)

have been identified as sites for terminal OH groups.

Yates (12) and Primet et al. (13) also have attempted to identify

surface hydroxyl groups of both rutile and anastase. These band

assignments are given in Table I.

In the above discussion it is evident that in some instances there

is some inconsistency in the band assignment ·by different authors

(8,9,12,13). To overcome this problem, Griffiths and Rochester (14)

have conducted a very detailed study of water adsorption of the rutile

surface. They have identified nine absorption bands due to adsorbed

H20 and surface OH groups. These bands are at 3725, 3700, 3680, 3655,

3610, 3520, 3410, 3400 (broad) and 1620cm”l•

The COII€l&¤iO¤ of these

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10

'eäerow A

’ ° row B

Figure ls (110) plane of rutile. The terminal OH groups are gene-rated by dissociative adsorpticn of water molecules at row_A Tiions.The bridging OH are formed by the dissociative adsorption ofwater molecules at row B 'O' ions.

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ll

bands to the hydroxylated TiO2 surface is presented in Table I. Our

assignments of TiO2 OH bands are given in the discussion section.

The studies of the interaction of NH3 and pyridine by Parfitt et

al. (15,16) have further confirmed the presence of two different

adsorption sites on the rutile surface, which would be the molecular

water adsorption sites on a hydroxylated rutile surface. Herrmann and

Boehm (17) have reported that adsorption of ammonia on anastase yields

NH4+ species as a result of surface’OH’

groups.

2.II.B Reactions of silanes with silica W

The interest in reactions of oxides with silane reagents is due to I

several reasons. In general, silanization provides a way to deactivate

active sites on surfaces. In gas chromatography, before the glass

.(silica) columns are packed, they are treated with silane reagents to

form an inert surface in order to prevent peak tailing. The used GC

columns are treated with silanes in order to block the active sites

formed by 'column bleeding’ during the operation. Silane reagents with

hydrolytically unstable bands and with various organic functionalities

are used to form bonded column packing materials (stationary phase).

Therefore, due to the wide interest of these silanization reactions,

knowledge of the mechanistic aspects of these reactions is likely to

enhancel the understanding of these processes. There are only a very

few reports (18,19), on the silanization of Ti02 in the literature.

But these studies have not carried out with the objective of studying

kinetics or mechanistic aspects of the derivatization process.

Hair and Hertl (20,21,22,23) have published a series of reports on

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3l2

e

the kinetics of gaseous phase silanization of the silica surface with

both the chloro— and methoxysilanes. In the reaction uof

trimethoxymethylsilane with silica (20), they observe that the reaction

by-product, methanol, also reacts with the surface. Quantitative

experiments show that for every molecule of siloxane present, 0.36l

molecules of methanol react with the surface. The variation of bands6

at 3745 cm'1 (Si - OH) and 2850 cm'l (C - H) are used to plot the

reaction curve. During the reaction, they observe the appearance ofan

broad band at 3350 cm°1, which is assigned to the interaction of

unreacted 0Me groups with the surface OH species. This accounts for

_

10-15% removal of surface OH groups during the reaction. The reaction

, is shown to follow 3rd order kinetics with respect to surface OH

species 'up to about 80% of the reaction. The third order kinetics

indicate that for every molecule of siloxane reacted with the surface,

3 OH groups are removed from the surface. This does not necessarily

mean that the siloxane reacts trifunctionally. A mass balance

calculation shows that 40% of the siloxane molecule taacts

monofunctionally and 60% of it difunctionally. The study indicates

_ that the chemisorption reaction is preceded by the physisorption of

siloxane onto the surface. The dependence of reacticn rate being 3rd

lorder with respect to the free surface OH species as well as 3rd order

with respect to the fraction of absorbed (siloxane) OH groups shows

that the configuration of the siloxane molecule in physisorption and

chemisorption somewhat similar.

In the subsequent report Hair and Hertl (21) present the results of

the silica reaction with mono- and dimethoxymethylsilanes. As in the

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13

previous case the hydrogen—bonded OH species do not react with the‘

silane molecule. The rate—determining step for this process is

suggested to be the formation of Si — 0 · Si bonds from the physisorbed

molecules. The reaction curve is plotted in a similar manner to the

previous report. These data yield linear kinetic plots with orders of

1.6 for monomethoxy- and 2.2 for dimethoxysilanes. From the mass

balance equation it is determined that 60% of the dimethoxysilanes

react monofunctionally and 40% difunctionally.l

In contrast to methoxysilane reactions, the by—product HC1 formed

during the chlorosilane reactions (SiCl4, MeSiCl3, Me2SiCl2 and

Me3SiCl) (22) does not show any significant reaction towards silanol

groups of silica. As in the previous reports (20,21) the reaction

curve is obtained from the variation of absorbance for bands at 3745

(SiOH) and 2850 cm°1. The orders of respective reactions are obtained

by a curve-fitting technique on a variable·order rate equation. As

expected, monofunctional chlorosilane has a lst order rate with respect

to surface OH species, whereas all three other silanes have an order of

1.5 (approximately). This corresponds to 50% of the silane reacting

monofunctionally and 50% difunctionally. Analysis of reacted samples

reveals the presence of chlorine in reasonable amounts, which is

unexpected. The initial fast reaction is attributed to direct

replacement of OH by Cl, as shown in equation 1.

Si -·· OH + Cl - SiMe3 + Si ·—- Cl + HO - SiMe3, (1)

The activation energies calculated for all of the chlorosilane

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·14

reactions are about the same (22 cal/mole). This indicates the

similarity of the reaction mechanisms. In contrast to the reactions of

methoxysilanes, the reactions of chlorosilanes have shown to be

pressure-independent in the 15-80 torr range.

In a similar study of reactions of HMDS with silica surface (24),

the rate of the reaction is second order with respect to surface OH

concentration and 1.74 order with respect to fraction of surface OH

covered by adsorbed (physically) silane. This indicates that the 70%

of adsorbed species are at two sites and 30% are at a single site.

This review has covered the literature on surface band assignment

of Ti02 and the kinetics of silane reactions with silica surface.

2.III.A Experimental

Ti02 (P—2S) powder was obtained from Degussa Corporation. *

Accordiug to the specifications provided by the manufacturer, the mean

particle size was 0.03 p and silicon content was less than 0.2% by

weight. An X-ray powder diffraction study on this powder has shown

that this is indeed a mixture of anastase and rutile (85:15).

Before the experiment the powder was subjected to two different

heat treatments in order to remove the impurities: a) heat to 400°C to

remove.carbonaceous matter; b) press into a pellet (60 mg of powder was

V pressed in a 13 mm die at a pressure of 80-100 MPa); c) fire pellet at

500°C for 7-8 hours in order to remove organic impurities.

The surface area, measured by the BET method, was 51.2 mz/g before

step (a), 48.6 mz/g after step (b), and 31.5 mz/g after step (c). This

may be due to sintering and particle•particle contact in the pressed

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l5

pellet. After the pellet was burned in the oven, it was allowed to

cool to room temperature, and was stored in a humid atmosphere to

achieve maximum surface rehydroxylation. This was found to eliminate

carbon dioxide adsorption onto the pellet.

All the reactions were carried out on a ’greaseless’ vacuum line

containing Teflon stopcocks and #15 O-ring joints. Vacuum conditions

were achieved by mechanical and oil diffusion pumps, which were

isolated from the reaction area by two liquid nitrogen traps. The

pressure of the vacuum line was monitored by two Hastings Vacuum

gauges, which were pre-calibrated. The vacuum line was capable of

sustaining dynamic pressure below 0.001 torr.

The pellet was held in the IR-cell with the help of a 8-mm diameter

Teflon holder. The IR-cell consisted of three 15 O-ring joints. Two

of them were colinear and the third was used to connect the whole cell

to the vacuum line. The CaF2 windows were sealed at the colinear O-

ring joiuts with Teflon O—rings. The cell and the windows were held

together by two clamping plates. Heating was achieved by wrapping a

heating tape around the body of the cell. The adjustment of the

heating control unit, a ’HexAcon' solid state control device, was pre-

calibrated using a thermometer. The Teflon stopcock adaptor of the

IR-cell allowed it to be sealed or connected to the vacuum line. The

clamping plates helped to hold the IR-cell in the light path of IR-

_ spectrometer as well. All the IR-spectra were recorded on a Perkin-

Elmer 283B Spectrophotometer. The reference beam was attenuated with

an empty vacuum IR-cell.

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16

2.II1.B Synthesis _

A11 the silanes (Petrach) used were distilled and degassed by two

freeze-pump-thaw cycles. These were stored under vacuum in flasks with

Teflon stopcocks until use. After the pellet was carried through the

cleaning steps, it was mounted in the IR-cell, dried under vacuum

(0.001 torr) at 150°C for 2 hrs., and an IR-spectrm of the sample was

obtained. The‘ IR-cell was reinstalled in the vacuum line and the·

pellet was exposed to silane vapour. The vapour pressure of the silane

was controlled by thermostatting the flask containing the silane

reagent, which was open to the vacuum line. The pellet was allowed to

react with the silane for one hour. The silane was pumped away for

·about 15-20 min., the IR-cell was sealed under vacuum and the second

IR—spectrum of the sample was obtained.

For each silane reagent three different reactions were carried out

on separate pellets.

A) After drying the pellet at 150°C for 2 hrs., the pellet was

reacted at room temperature while the liquid silane temperature was

controlled at O°C. After the reaction (1 hr.) the excess silane was

pumped. out and the IR-spectrum of the reacted pellet was obtained.

Then the IR—cell was reinstalled in the vacuum line, and heated at

150°C for 2 hrs. under vacuum (0.001 torr); the third spectrum was then _

obtained. The pellet was then exposed to humid air for 3 hrs. under a

large beaker. The saturated water vapour pressure within the beaker

was achieved by inserting a smaller beaker filled with water. This

pellet was reinstalled in the vacuum line and dried at 150°C under

. vacuum (0.001 torr) for 2 hrs., and the final IR—spectrum of the pellet

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l7 ^

was recorded.

B) The same reaction procedure was followed as in (A), except the

pellet was at 150°C, and the silane was at 0°C, during the

derivatization reaction.

' C) Same as (B), except the silane was held at 15°C in order to

obtain higher vapour pressure.

2.IV Data and Interpretation .

The IR spectrum of TiO2, dried at 150°C under vacuum conditions as

shown in Table II, shows a range of peaks due to OH stretching

vibrations in the 3000-4000 cm°l range. In this table and in the rest

of the infrared data tables (II + XXXIX) the peak heights have been

measured with respect to the immediately adjacent base line. There are

two weak bands which appear in the 2800-3000 cm'1 range and a broad

band at 1620 cm'l. This spectrum is shown in Figure 2A as well.

When this pellet is exposed to D20, all the bands in the 3000-4000

cm'1 region are displaced to a lower frequency region. The ratio of

vou/vOD is about 1.36 for all three of these bands, which is close to

the theoretical value expected for a deuterium shift of OH to OD. This

shows the -0H nature associated with all bonds in that region. Further3

the quantitative exchange shows that the surface -0H groups are

accessible to gaseous reagents. This has been confirmed by Jones and

”Hockey (9), who noted that some -0H groups are not exchangeable with

D20; these OH groups may lie in grain boundaries or particle contact

points. The bands which appear in the 2800-3000 cm°l region correspond

to C~H stretching vibrations of hydrocarbons. We have observed three

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‘18

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20

distinct bands at 3730, 3650 and 3420 cm'l and a shoulder at 3680 cm'1

V in the IR—spectrum of vacuum dried TiO2 [l50°C]. As it has been shown

above, the deuterium exchange has confirmed the hydroxylic nature of

these bands. As the P-25 was a mixture of anastase and rutile, it is

‘ expected that the hydroxyl groups due to both of these components are

present in the IR—spectrum. In previous rutile spectra, the terminal

OH species is assigned to the bands at 3680, 3655 cm'1 (14), 3665 cm'l

(13), 3680 (12), 3650 (9,10) and 3670 (8) (Table I). Therefore the

3650 cm'1 band and the 3680cm”l

shoulder observed is most likely to be

due to terminal OH species of rutile component, The bridging OH

species has been previously assigned to the 3410 cm'l band (9,10,14)

(Table I) for rutile,

Anastase Spectra show, a terminal OH band at 3715 cm°1 (12,13)

(Table I). Therefore, the peak observed at 3730 cm'1 we believe is

due to the anastase component of P25. The 3650 cm'l is thought to be

due to che overlap of 3665 cm'1 of anastase (13) and 3650 cm'l (9,10)

and 3655 cm°1 (14) of rutile components. The bands which appear in the

2800-3000cm‘l

region correspond to C—H stretching vibrations of

hydrocarbons. We have observed weak absorption bands in this region

throughout this series of experiments. We believe these bands are due

to sample contamination caused by the hydrocarbon leachants from the

'0' rings used in the vacuum line. The broad envelope centered around

3400 cm'! has been assigned to hydrogen-bonded OH of adsorbed water.

Jackson and Parfitt (8) have shown the sensitivity of this band to the

extent of water present on the surface.

The broad band at 1620 cm'l is assigned to molecular water.

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· Z1

2.IV.A Reactions of TiO2 with Silanes

The surface hydroxyl groups, both the terminal and the bridging on

the TiO2 surface, react with gaseous silane reagents to form

derivatized TiO2 surfaces. The reactions may be visualized as shown ·

equations 2 and 3.

Terminal OH:Fe

Ti OH + C1 -— $1 -- M; -...)°|Me FeTi O —- Fi ·—- Me + HC1 .............(2)

Me

Bridged OH:MeTi [

O —- H + C1 -. 5; ... M,___} '

Ti [ °' Me

MeTiTi[

( )Me

In these reactions, the reaction by·products of chloro— and

methoxy-silanes, and HMDS [heramethyldisilazane], are HC1, MeOH, and

NH3, respectively.n

2.IV.B. Reactions with trimethylchlorosilane ·

The IR spectra of TiO2 before and after the reaction with

dimethyldichlorosilane are shown in Figure 3. The changes that take

Page 34: COATINGS BY ELECTROCHEMICAL POLYMERIZATION/· · 2020. 1. 17. · The photocorrosion of small bandgap ¤—type semiconductor electrodes is a serious impediment to the development

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Page 35: COATINGS BY ELECTROCHEMICAL POLYMERIZATION/· · 2020. 1. 17. · The photocorrosion of small bandgap ¤—type semiconductor electrodes is a serious impediment to the development

23

place on a TiO2 surface after the reaction with trimethylchlorosilane

are very much similar to those observed for dimethyldichlorosilane.

The respective IR data are given in Table III. The sample was at

150°C, and the liquid silane v.p. was 63 torr. The main differences in

spectra A and B are that the intensity of the surface terminal hydroxyl

groups at 3730 and 3650 cm'1 are drastically reduced and the bridging

groups at 3425 cm'l are considerably attenuated due to the

derivatization reaction. The attenuation of terminal OH groups is 862

and the bridging OH is 64%. This shows that terminal groups are more

reactive toward a chlorosilane than the bridging OH. The bridging OH

groups are under the influence of two titanium ions in the (110) plane

of TiO2 whereas the terminalOH’s

are under the influence of only one

titanium ion. Jones and Hockey (10) have proposed that a) the basicity

of the bridging OH group is much higher than that of the terminal OH,

hence the higher polarity of the bridging OH species makes them more

reactive in hydrolytic reactions, and b) the bridging OH group is

closer to the (110) surface than the terminal OH group. It may be that

· the silane reagent first approaches and reacts with the terminal OH

groups as they extend further away from the surface than the bridging

OH groups. Once the reaction occurs at terminal groups, the bulky

trimethylsilyl group hinders the approach of the next reagent molecule

towards the bridged OH groups.

The presence of the trimethylsilyl group is evident due to the

enhancement of absorption at 2960 and 2927 cm°l which is assigned ¤¤

C-H stretching vibrations. Further, there is a very strong absorption

band at around 1259cm”l

which is due to the Si—C stretching mode.V A

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24

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25 _

C-H bending vibration appears at 1410 cm'1. A solution containing

Me2SiCl2 in CCl4 produces absorption bands at 2978, 2914, 1407, and

1260 cm'l. Similar peaks have been observed for all silanized Ti02

surfaces. I

The other processes that would be responsible for attenuation of

surface OH groups are a) thermal dehydroxylation and b) physical

adsorption of reagent and by-product. Heating of a clean Ti02 pellet

overnight at l50°C under vacuum causes only a 10% 'reduction of the

terminal peak intensity and an 8% reduction of the bridging OH peak

intensity. Therefore, contribution to the peak attenuation of OHI

groups by this mechanism would be minimal during the one hour reaction

at 1so°c.Table III shows the IR data obtained after heating the sample at

· 1s0°c for two hours after the excess silane reagent is removed from the

reaction system. It shows that after the thermal treatment, both the

2900-3000 cm'1 and 1260 cm'l absorption bands remain at almost the same

intensity. This indicates that if there is any physical adsorption of .

chlorosilane, it is minimal. ‘

After reaction with any chlorosilane, we have observed a new band

around 3545 cm°1. A similar band appears when clean TiO2 is exposed to

HC1 (see below). There are two observed properties of this peak: a)

it exchanges with D20 with a peak shift ratio vOH/OOD close to 1.35 and

b) the effect of heating the pellet is more drastic on this peak (Table

III) than on the surface OH groups of Ti02. Hair and Hertl (22) in

their study of the reaction of chlorosilanes with silica, found that

their type of silica did not adsorb HC1; no corresponding new peak was

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26

observed on their samples. We believe that this peak is due to OH

groups which are hydrogen—bonding to adsorbed HC1. The sharpness of

this peak indicates a well-defined orientation of the hydrogen—bond.

Both Jones (9) and Jackson (8) have shown that acceleration of

dehydration of Ti02 is due to the presence of Cl'. The enhanced

thermal attenuation of this peak may be due to its association with HC1

and under _thermal treatment, the following dehydration reaction is

possible.

heat

+

H—Cl + 1:1-011 + TiCl + H20 (4)

”- Also, after silanization there is a drastic reduction in the

bending mode of adsorbed water at 1620 cm'1. This peak has been

assigned to H20 which acts as on ligands at bareTi“+

sites.Parfittet

al. (8,16,17) have shown that during the NH3 and pyridine adsorption

experiments, the adsorbed water is being replaced by these molecules.

But in this reaction with silane, there is hardly any species available

which would be a good ligand that would replace adsorbed H20. We

therefore conclude that the water is being removed by reaction with

excess silane.

Table III shows the room temperature reaction of TiO2 with SiMe3Cl·

at 63 torr. The terminal hydroxy groups have attenuated 92% and the

bridging OH about 38%. Under the same vapour pressure at 1s0°c the

peak attenuation observed for these OH groups of TiO2 are 86% and 21%,

respectively (Table IV). So in these reactions, the temperature of the

reaction and vapor pressure of silane do not show definite trends on

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27

the reactivity of the terminal OH and the reactivity of the bridging OH

groups. We suggest that reactions have essentially ceased within the 1

‘hour reaction time.

Table V shows the IR data for TiO2 (1so°c> modified with

trichloromethylsilane, keeping the liquid silane at 1S°C (v.p. 143

torr). The only difference between these reaction conditions and the

previous ones (Table III and IV) is the silane vapor pressure, 63 torr

and 143 torr, respectively. But the attenuation of the terminal OH is

almost the same (92% compared to 86%). The reactivity of the bridging

OH groups exhibits a considerable difference (41% to 21%). This

indicates that the silane vapor pressure does not have any large effect

on the derivatization reaction. Hair and Hertl.(22) have shown that a

variation of chlorosilane vapor pressure between 15 and 80 torr does

not effect the kinetics of their reaction with silica.

2.IV.C Reactions of Dimethyldichlorosilane [DMCS] and

The tables VI—VIII and IX-XI show the IR data obtained for the

reactions of TiO2 with Me2SiCl2 and MeSiCl3. The reactivity of the

terminal hydroxyl groups are essentially quantitative whereas the‘

bridging groups show a definite trend in reactivities in contrast to

TMCS reactivity. The extent of reaction of this OH species increases

with both the vapor pressure of silane and the temperature of the

reaction. In spite of the fact that these silanes have lower vapor

pressure at 15°C than TMCS, the attenuation of OH peaks is comparable

or higher at 150°C reactions (19b). This may be due to the fact thatH

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· 28

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36 ‘

both the DMCS and TCMS are able to form silane bridges as they have two

or more hydrolytically unstable Si—Cl bonds in each molecule. It is

possible that after these molecules undergo the hydrolytic reaction

with one of the terminal or bridging OH groups, the proximity of the

second Si—Cl bond with a second OH group facilitates the subsequent

bridging. Due to the interatomic layer distance on the (10) plane of

TIOZ, it is more likely that bridged silane bonds form between the

bridging OH species in the layer B than the interlayer (AB) bridges

(10). ~ .

2.IV.D Steric reasons against trifunctional reactions withTrichlomethylsilanes

According to the surface hydroxylation model proposed by Jones and

°Hockey (9) (P. 9), the distance between the hydroxyl groups on _the

same row (A—A or B—B) is 2.9 A and between hydroxyl groups on the

adjacent rows (A—B), 3.6 A._ The approximate value for Si-Cl covalent

distance is 2.0 A (in SiCl3H) and by taking the bond angle as 109°, the

calculated distance between two Cl atoms on the base of a tetrahedral

pyramid is 3.26 A. If one considers any three adjacent hydroxyl groups

on the (110) plane of rutile, they are in a geometry corresponding to a

right angle triangle, with the sides 2.96 A (A—A or B—B), 3.6 A (AeB),

and 4.6 A (A-B, diagonal). Two bonds can be readily formed between anyU

two surface oxygens and the Si atom, but simple geometry shows that the

formation of a third Si—O bond creates considerable strain on all the

Si-0 bonds.

In this experiment with DMCS and TCMS, we have never observed free

Si—OH (3730 cm°l) (derived from unreacted SiCl bonds) after the

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37

complete reaction sequence. It may be that Si-OH groups condense with

similar groups in the surroundings during the thermal activation after

exposure to water vapor (step D of the reaction sequence). To examine

if there are any free Si0H groups on the surface, an IR spectrum was

recorded after the hydrolysis of the TCMS—derivatized TiO2 pellet after

a couple of hours of evacuation at room temperature (no heating).

There is only a very weak absorption (0.02 absorbance units) band in

the 3730 cm'! region. But there is a broad and strong absorption band

in the region 3750 · 2500 cm'l due to excessive adsorbed water present

on the surface. It may be that most of the Si-OH groups are hydrogen-

bonded with surface—adsorbed water, and the corresponding free Si·0H

band is hidden in the broad absorption band.

2.IV.E Reactions of SiClg”

There are several striking differences in the reactivity of tetra-

chlorosilane compared to the other three chlorosilanes. First, it

shows a strong dependence on silane vapor pressure. At 1s0°c under 152

(torr v.p. 1002 of both the terminal and bridging OH groups have

reacted, whereas at the same temperature and under 83 torr, only 662

and 12 ‘react, respectively. Compared to SiCl4, all the other

chlorosilanes that have been used in our experiments have lower vapour

pressures at both O°C and 15°C. In spite of this fact, they have been

shown to cause much higher attenuation of OH species of Ti02 than

SiCl4 (19b).

The experimental data observed for SiC14 reactions is given in

Tables XII-XIV. These data as well as Figure 4 show that a relatively

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33

-1Cm4000 3000 ·Figure 4: IR spectra of titanium dioxide reacted with silicontetrachloride (regime 2,V.P.83 torr)(A) evacuation for 2 hrs at ISOO C, after reaction.(B) after exposure to moisture (10 torr) and heating at lS0°tZ,} for 2 hrs.

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° 42

V strong Si-OH band at 3730 cm'l is present after the reaction sequence.

This band is not observed in the reactions with mono-, di-, and

trichlorosilanes. According to the previous discussion, the multi-

functional silanes are less likely to form more than two bonds with the

Ti02 surface, and it is argued that the third SiCl could be condensed

with the neighboring Si-OH groups under thermal activation for form Si-

0-Si crosslinks. But in the case of SiCl4, there is a fourth si-ci

bond after the reaction, most probably perpendicular to the TiO2

surface, being directed away from any reactive groups. This fourth

SiCl group is then hydrolyzed to form the free Si0H. In some

orientations, SiCl4 may undergo total reaction with the four

functionalities forming two bonds with the surface and two siloxane

bridges with neighboring silane molecules.l

2.IV.F Reactions of Methoxy Silanes with TiO2 surface

As in the case of chlorosilanes, the presence of silane on the

surface after the reaction is evident by the enhancement of bands in

the C-H stretching region and a strong absorption band in the 1250 cm°l

region. But an infrared spectrum of methoxysilane-reacted Ti02 shows

several udifferences compared to the corresponding chlorosilane—reacted

sample (20). The disturbed 0H peak (3540cm”1)

régi0¤ iS ¤¤t évidént,

(Figure 5). Further, (this is in contrast with the methoxysilane

reactions with silica surfaces reported by Hertl (20,21). The IR

spectrum of methoxysilane-reacted TiO2 does not show any bands in the

3350 cm'l region (Figure 6B), whereas silica samples show a round band

in this region, which has been assigned to hydrogen-bonding

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43

_lcm

4000 3600' 3000 2600

Figure 5: The contrast of chlorosilane(MeSiCl) modification(curve A) vs methoxysi1ane(MeSi(0Me)) modification (curve B)

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A4V

[ .

1 .1

EE6E-·····—·——···—·E%r·—·————-—-——————-—-—*————r—--1>00 1200 ¢-¤

Figure 6: Differeuce spectra of tetramethoxysilane reactedtitarxium dioxide, (regime 1). (a) after reacticu, (b) afterevacuatiou the pellet at l50°C for 2 hrs, (C) after exposingthe sample to moisture for 2 hrs followed by heating undervacuum at 1SO°C for 2 hrs.

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45

interactions of unreacted MeOH groups with surface OH groups. Next,

there is a relatively strong band around the 2840 cm'! region, in -

addition to the bands observed in the 2900-3000 cm'l region. Similar

bands have been observed by Hertl (20,21) after reaction of

methoxysilanes with silica. We have tentatively assigned this 2850cm“l

band to Ti—0-CH3. But the lower intensity observed in this band in

the chlorosilane reactions is not quite clear from the extent of peak

attenuation in the derivatization reaction. The byproduct HC1 reacts

with the surface of TiO2, and methanol [byproduct] also reacts with the

surface of TiO2. Examination of Tables II·XIV and XV-XXVI reveals

that, after the complete reaction sequence, in methoxysilane-reacted

surfaces, the regeneration of both the terminal and bridging OH species

is more extensive than in the case of chlorosilane reactions. This may

ube due to•the fact that adsorbed methanol is removed from the surface

much more easily than adsorbed HC1. [Results of byproduct adsorption

will be addressed in a later section.] The reaction of

tetramethoxysilane is somewhat parallel to that of tetrachlorosilane,

as we have observed residual Si-OH groups after the complete reaction '

sequence.

In the case of chlorosilanes, the unreacted Si—Cl bands (550 - 610

cm°1) are not observable spectroscopically on TiO2. The methoxysilanes

show a characteristic band at 1190 - 1195 cm'l which is assigned to the

Si—O-C moiety. This band is clearly evident in Si(OMe)4 reactions

(Figure 6A), but not in the methanol adsorption reactions, and it is

thermally stable (Figure 6B) and strongly attenuated when the pellet is

exposed to water vapor (Figure 6c). All of these facts are consistent

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46

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58 _with the assignment of this band to the Si-O-C moiety. Pellets reacted _with MeSi(OMe)3 and Si(OMe)4 show this peak, but it is not

distinguishable on a pellet reacted with Me2Si(OMe)2 or Me3Si(OMe).

The infrared data obtained for methoxysilane reactions are

presented in the Tables XV to XXVI.

2.IV.G TiO2 Reaction with HMS

The attenuation of the terminal OH band during this reaction shows

that hexamethyldisilazane (HDS) is almost as good as chlorosilanes in

surface derivatization and is a more potent reagent than

methoxysilanes. It is difficult to determine the fate of bridging OH

groups due to the strong overlap of N—H absorption bands in this region

(3100-3850 cm'l) (Figure 7). The presence of the -Si(Me)3 group afror

the reaction sequence is evident due to the enhancement of the

absorption bands in the 2900-3000 cm'! region and strong absorption in

the 1250 cm°1 region-

2.IV.H Reactions of HC1 with TiO2 surfaces

A11 the derivatization reactions with chlorosilanes yield the by-

product HC1. In our work as well as other workers (8,9), we have shown

that HC1 adsorption causes attenuation of both terminal and bridging OH

species, and the appearance of absorption bands at 3550cm’l

and 1600

cm-1 region, accompanied with enhancement of the broad envelope due to

hydrogen-bonded OH species. The latter two observations suggest the

formation of water adsorbed on the surface during the reaction. Jones

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66

and Hockey (9) have proposed the following reaction schemes to account

for this observation:

O2' (surface) + 2HCl + 2H20 + 2C1' (5)

OH' + HC1 + H20 + C1' (6)

The coordinatively unsaturatedlTi“+

ions generated in these

reactions in turn can capture C1' as shown in the following reaction:

:::Ti4+ + C1' + Ti—Cl (surface) (7)V

/,/

Repeated attempts to regenerate the original surface by hydrolysis

(exposure to moisture) and dehydroxylation (thermal treatment 150°C)

was a failure. The observed intensity of both terminal and bridging OH

groups is only a fraction of what they were originally. This can be

explained by the surface dehydroxylation and Ti—Cl formation as shown

in the equations. Further, it may be that Ti—Cl bonds are resistant to

hydrolysis under moderate conditions.

The observed data on the HC1 adsorption process are presented in

Tables XXX and XXXI. The examination of OH absorption bands, in these

tables, before and after the reaction scheme, indicates that the

surface perturbation caused by HC1 adsorption/reaction is rather severe

and due to this reason it is more difficult to regenerate the original

surface.

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Page 81: COATINGS BY ELECTROCHEMICAL POLYMERIZATION/· · 2020. 1. 17. · The photocorrosion of small bandgap ¤—type semiconductor electrodes is a serious impediment to the development

6 69

2.IV.I Reaction of Methanol with TiO2 Surface

The byproduct of methoxy-silane reactions, MeOH, also reacts with

TiO2 surfaces. In our studies of methanol adsorption on the TiO2

surface, we have observed a multitude of C—H stretching bands at 2980,

2890, and 2820 cm°l. These peaks are stable even after heating the

reacted surface at l50°C. This may be due to the chemisorption

reaction of methanol with surface OH species as shown in the following

equation.

Ti—0H + cu3ou H20 (8)

_

But in contrast to the case of HC1 adsorption, neither the band

around 1600 cm”l nor the hydrogen—bonding envelope in the 3500 cm'1

region show any enhancement of intensity. In fact, the 1610 cm-1 band

attenuation shows some loss of adsorbed water which is on the surface.

But this seems to be a reversible phenomenon since when the methanol-

adsorbed sample is exposed to moisture for a couple of days, and re-

evacuated at 150°C, the original surface is produced almost completely.

Therefore, the methanol adsorption does not cause irreversible effects

on TiO2 surface as it does by HC1 adsorption. The pertinent data on

MeOH adsorption is presented in Tables XXXII to XXXIV.

6

2.IV.J Reaction of NH3_!i£h TiO2 surface

The reaction byproduct in HMDS reactions is NH3. In the subsequent

experiments we have observed that NH3 also can undergo reactions with

surface OH groups, though to a lesser extent than HC1 or MeOH. The

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73 .‘

infrared data on these reactions are presented in Tables XXXV-XXVI. We

observed four bands (3396, 3344, 3239, and 3152 cm'l) after the

reaction with HMDS which are believed to be due_ to N—H stretching

vibrations. Parfitt et al. (16) have studied adsorption of amonia on

rutile surface, and they have reported bands at 3400, 3350, 3200, and

3250 cm”1. These bands have been assigned to adsorption of ammonia on

two different Lewis acid sites (10) present on the surface. Peri (24)

also has observed bands at 3400 and 3350 cm°1 during ammonia adsorption

on alumina. The adsorption bands that are present in the lower

frequency range are more puzzling. There are four bands: 1595, 1520,

1453, and 1415cm”l.

. NH4+ ions adsorbed on rutile surface produces

Lbands at 1410, 3050, and 3150 cm°1 (3,24b). The bands at 1595 and 1520

cm'! are close to the bending modes of H—N—H groups. These two bands

may be assigned to bending modes of NH3 molecules adsorbed on Lewis

sites on the TiO2 surface, while the weak 1453 and 1415 cm°1 bands are

assigned to NHA+ due to some proton transfer process that takes place

on the surface.

‘ H

NH3 +T1/ T1 +

T1/T1 + mf <9)·

2.IV.K Summary of Percentage OH Loss

Tables XXXVII a, and b present the losses of both terminal and

bridging OH intensities after reaction of TiO2 with different silanes

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75ä

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76,4 l

“Table XXXVII—A

Percentage Loss of Ti·O-H Incensity afcer Chemical Modifications11¤¤e° s11a¤eb Pelleca z C z_

a Temper· Vapor Temper— Pelle: Terminal BridgingSilane (b.p.) acure Pressure acure Number O-H Loss 0-H LossHe1SiC1 (58°) 0‘

63 RTd TI 24 1002 472° 0° 63 RT TI 26 1002 3820' 63 l50° TI 27 1002 4020° 63 lS0' TI 30 1002 4121S° 143 1S0' TI 66 1002 212

He2SiC12 (71°) 0' 41 RT TI 23 1002 72O' 41 RT TI 34 1002 220‘

41 l50° TI 35 1002 44215° . 84 1S0' TI 38 1002 612

Me$iC13 (67') 0° 54 RT TI 44 1002 3220' 54 l50° TI 45 1002 252’O' 54 1S0' TI 68 1002 422

15° 101 1S0° TI 46 1002 652$1014 (S2')

0’82 RT TI 39 752 22 .0° 83 l50° TI 40 662 121S° 152 l50° TI 41 1002 1002

He3Si0Me (S8') O' 70 RT TI 47 732 020° 70 1S0' TI 48 842 0215' 140 l50° TI 49 772 02He2Si(0Me)2 (82°) 0° 24 RT TI S1 862 312

0° 24 l50° TI S2 942 3215° 50 150' TI S3 912 342

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77

'Table X.X.XVII¤—B

Silanea Silaneb Pelleta 2 2a Temper· Vapor Temper- Pellet TerminalcßridgingSilane (b.p.) ature Pressure ature Number O·H Loss 0-H Loss

Me$i(OMe)3 (103°) 0° • 7 RT TI 54 832 02 ·0* 7 150* TI 55 952 232 ~0* 7 l50° TI 69 1002 322

15° 16 150* TI 54 962 272_ Si(0Me)4 (122°) 0° 1 RT TI S9 1002

6402· O° 1 150° TI 58 982 0215° 6 150' TI 57 1002 272

mms (127°) o' 1 ar TI 31 862 Q °0* 1 l50° TI 32 962 e

15* 6 l50° TI 33 982 eHC1 —— 85 RT TI 62 622 692—· 152 150* TI 61 1002 1002Meoa (65*) 0° 36 R': TI so 682 oz

0* 75 150° TI 60 812 f15* 50 150* T1 63 902 f

NH3 ' -— 5 RT TI 64 592 e-— 5 l50° TI 65 572 e

(a) A11 temperatures in °C; (b) vapor pressures in torr; (c) peakareas above the absorption envelope due to hydrogen-bonding;(d) RT ¤ room temperature, typically 20·25°C; (e) peak(are? not‘available due to strong overlap with a byproduct peak NH} ;(f) peak area actually increascd slightlx. Reaction times wereone hour.

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78and

their reaction byproducts. But these observed peak attenuations

cannot be interpreted in terms of the reactivity of OH groups towards

different silanes, due~to

several reasons. As has been discussed

before (p. 25), the peak atteuuations are mainly due to: —

a) Reaction of silanes with Ti02 surfaces,

b) Adsorption of silanes on TiO2 surfaces,

c) Reaction of reaction byproducts with Ti02 surfaces.

In addition to that in the case of chlorosilaues, a disturbed peak,

which is OH in nature, has also been observed. This, in fact, further

complicates the interpretation of results that have been observed_ for

chlorosilane reactions. Due to these reasons it is difficult to reach

a conclusion as to (a) if the terminal OH species are more reactivel

than the bridging OH species, (b) if the temperature and vapour

pressure of silane have any effect on the reaction equilibrium. But on

the basis of peak atteuuations observed for methoxysilanes, it appears

that terminal OH species are more reactive than bridging OH species.

2.IV.L Surface Coverage

Quantitative determinations by infrared spectroscopy in the liquid

phase are not a widely used technique in analytical chemistry. This is

mainly due to the availability of other more sensitive techniques for

this purpose. Even in the liquid phase the extinction coefficient for

certain absorption bands varies with concentration, polarity of

solvents, etc. This has been attributed to intermolecular interactions

of the species concerned (25). The quantitative determinations of

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n79

adsorbed species on solids by infrared spectroscopy is a considerably

more complicated task. The major reason is the empirical nature of

variation of the extinction coefficient of infrared, bands 'of the

adsorbed species (26,27). The extinction coefficient is a function of

adsorbate/substrate interaction; Folman and Yates (26) have observed an

exponential decrease in the extinction coefficient of N—H stretching

band (adsorption of NH3 on porous glass) and increase of C-H stretching

(adsorption of (CH3)2CO and CH2Cl2 on porous glass) with increasing

surface coverage, Further, the extinction coefficients of infrared

bands of the adsorbed species are different from that observed for

similar species in the liquid phase. Hoffmann and Brindly (3) have

reported values of 18.6 and 37.3 for extinction coefficients of ~CH2

symmetrical stretching vibrations of 2,5-hexadione and 2,5,8-

nonanetrione adsorbed on Ca—montmorillonite, respectively. The

extinction coefficients for the same vibrations in solution are 27.4

and 54.0 respectively. Further, both increase and decrease of

extinction coefficients with different surface coverages are also

reported in the literature. ' L.H. Little (28) has reported a decrease

· in the extinction coefficient of ethylene chemisorbed on N10 and an

increase after chemisorption on CuO with increasing surface coverage. ‘

Therefore, the extinction coefficient of the absorption bands of

adsorbed species may be higher or lower than that of liquid phase

species, once again depending on the nature of specific interactions

‘present in the system concerned. The literature available on infrared

extinction coefficients of adsorbed species is limited and also there

are not any theoretical models that have been developed in order to

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80

Vcalculate the same or their variations.

Due to the above indicated complexity as well as the limitations,

it is quite difficult to obtain accurate surface coverage information

on silane·reacted TiO2 surfaces. Therefore we have carried out

approximate calculations of silane surface coverage based on the

available data and other necessary information using the following

equation.

r (10)6 am „

The derivation is based on the application of the Beer-Lambert law

for surface-adsorbed species and the calculations are based on the

·absorption coefficient values which have been determined for solution

l

species.

On the basis of results presented in Table XXXVIII the following

· trends are observed.

(a) Surface coverage obtained for trimethyl, dimethyl° and

monomethyl increase in that order. This may be due to two reasons, (i)

trimethyl groups are sterically larger than the other two groups, hence

* Derivation is presented in Appendix I (p. 204 ).

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4uu GNGIN QG mcc ußu non ooe

L • • • • • • • • • • • • • « • • • •HN 44M 6Q Md- MQA HN?] 64

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3G U1 G6 ~I 0ß 0GA 4- -64 A60 QQN NQ GA nn- end 40

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_ 82

lower surface coverage results due to steric reasons, (ii) g observed

for trimethyl moiety is the largest in the liquid phase. The c for

adsorbed Species is unknown, and the error in using the liquid phase s

values in surface coverage calculations is unknown.

(b) Taking into account that all the surface coverage calculations‘

were made on the basis of some set of assumptions, reactivity of all

three types of silanes (chloro, methoxy and HMDS), appears to be

the same. l But, these data do not provide any information of the

reactivities of terminal and bridging OH species.

(c) These surface coverage data do not show any strong trends with

respect to reaction parameters, ie. temperature and vapour pressure.

2.V Conclusion _

1. On the basis of data on attenuation of surface OH Species during

the reactions with silanes (p. 76, 78) it is difficult to determine

as to what extent surface OH Species react with silane reagents,

due to the presence of several different mechanisms which cause OH

peak attenuation. Further it is uncertain as to whether there is a

difference in reactivities of bridging and terminal OH Species

toward silanes.-

2. Surface coverage calculations show near monolayer* coverage in the4

reactions with almost all the silane reagents. Further, it does

not show any remarkable difference of reactivity among different

silane reagents (ie. chloro, methoxy, and HMDS) as potential

* Monolayer coverage for the TMS group is 4 umol/mz.l

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83

surface derivatization agents, or strong trends in reactivity with

respect to temperature or pressure.

3. Surface perturbations caused by reaction byproducts is most severe

with chlorosilanes. The by-products of the other two types of

silanes induce only remporary changes in TiO2 surface.

4. Even though from the bond distance data, only two bonds with thel

surface are sterically permissable per silane molecule, only the

tetrafunctional silanes show free Si—OH groups after the complete

reaction scheme.

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Chapter 3

PHOTOELECTROCHEMICAL SYSTEMS

3.1 Introduction

The conversion of solar energy into more practically usable forms

of energy is an attractive idea. The prevalent eueigy crisis, which is

due to the depletion of natural resources, and the increasing cost of

production, and also the availability of solar radiation at no cost are

added incentives to explore solar energy conversion as a dependable

source for future energy needs. The goal of this venture is to develop

stable and durable systems that are capable of converting solar energy

into usable forms with.reasonably high efficiency. The conversion may

be either directly to electrical energy or to storable chemical energy

such as hydrogen, oxygen, etc. (29). The former is for direct usage or

application and the latter may be transported or stored as

circumstances demand. Another advantage of these systems compared to

the present systems, such as petroleum, natural gas, etc., is that they

are essentially non—polluting. The other criterion for the success of

this newer energy source is its economic viability. It should be

either comparable or less costly compared to presently existing or

alternative sources of energy.

The other advantage of solar energy conversion is its abundance and

its inexhaustible nature (29). This will spare the other sources of

energy such as coal, fuels, and natural gases, which are exhaustible,

84

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85

for their unique needs such as the synthesis of fabrics, plastics, and

other uses. In addition to that, solar energy is a more attractive

lalternative compared to nuclear energy and fossil fuels for safety

reasons and cleanliness, respectively.

Plant photosynthesis, which has probably existed for millions of

years, is an excellent example of conversion and storage of solar

energy (30). In this process atmospheric carbon dioxide and moisture

are converted to organic matter with the help of solar radiation. The

organic matter that is formed in the photochemical process is storable

energy which can be utilized subsequently (wood, biomass), or may be

lconverted to other sources of energy such as gaseous and liquid fuels

by biological or chemical means.

There are two types of photoelectric conversion devices. The first

is the solid state system known as the photovoltaic device (29) which

is capable of converting solar radiation directly to electricity. The

second is the interfacial device consisting of a

semiconductor/electrolyte, which is known as a photoelectrochemical

system. The latter system is capable of converting solar radiation

either directly to electricity or to storable chemical fuels such as

O2, H2, etc. In the following discussion, the fundamentals and other

pertinent aspects of a photoelectrochemical device will be discussed.

Photoelectrochemically—induced electrolysis of water has several

advantages. Hydrogen, which is a chemical fuel (31), can be stored

much more easily than either heat or electricity. It is non—polluting,

renewable, inexhaustible, and may be converted into other forms of

energy such as heat (by combustion) and electricity (via fuel cells).

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86 ·l

Also it may be used in the synthesis of ammonia, which is a chemical

feed stock in very high demand.

_ 3.II Semiconductors

U

It is impossible to begin an introduction on photovoltaic devices

or photoelectrochemical systems without referring to the band model of

solids. In atoms and molecules we refer to atomic and molecular

orbitals respectively. But in the formation of a solid lattice of a~

metal (e.g. Cu, Si) or an oxide (TiO2, SrTiO3), due to the overlap of

very large numbers of orbitals, the bonding and anti-bonding orbitals

are very closely spaced (31). This essentially forms bands of bonding

(filled) and antibonding (vacant) orbitals (Fig. 8A). The highest

filled and lowest vacant bands are known as the valence band and

· conduction band, respectively. Ev marks the upper edge of the valence

band, and EC the lower edge of the conduction band. In semiconductors

these bands are separated by an energy, Ebg, which is known as the

bandgap, and is an intrinsic property of the semiconductor.

· If the semiconductor is provided with energy greater than Ebg by

· thermal or optical means a valence band electron can be excited into

the conduction band. The fundamental principle of both the

photovoltaic devices and the photoelectrochemical systems is based on

the photoexcitation of the valence band electrons to the' conduction

iband and efficient separation of photo—produced electrons and holes;

the latter is a mobile positive charge in the valence band formed by

the removal of an electron.

The Fermi level (Ef) represents the chemical potential of an

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’ 87 — _

:„c nc

EVvalénce band: \\ \ I ‘

A B

Figure 8: Energy level diagram for an imzrinsic semiconducter.

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_ S8 ·

electron in the semiconductor, For an intrinsic semiconductor, the

Fermi level lies exactly in the middle of the band gap (Figure 8B).

3.111 Doping

Semiconductors are doped in order to induce reasonable electronic

conductivity. This is done by incorporating foreign elements into the

semiconductor lattice (32) so that it introduces vacant or filled

energy levels in the bandgap region, the former near the valence band

and the latter near the conduction band. When the donor (filled)

levels are located near the conduction band, the electrons are excited

into it by thermal energy, creating a population of loosely bound

electrons in the conduction band. Semiconductors in which the bulk of

g the current is carried by the electrons are called n—type (Figure

9A). Similarly, acceptor levels may be introduced near the valence—

band, so that electrons are thermally excited into these levels

creating mobile holes in the valence band. These are called p-type

semiconductors (Figure 9B). The electrons in the conduction band and

(the holes in the valence band will carry the electrical current in the

respective semiconductors. Upon doping the semiconductor, the Fermi

level moves either towards the conduction band (n—type) or towards the

valence band (p—type).

3.1V Band Bending in Semiconductors

· Now if we consider a semiconductor/electrolyte system (Figure 10A),

the following phenomeua occur depending on the potential to which the

semiconductor electrode is being subjected:

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89

G Q 9 9 ———-——————

—®-®—®-®- —- —·

—@··@-@-9- · "ß° ® ® ® @

rz-cypeBA p·:7pe

Figure 9: Doped semiccmductors Ca) u-type Cb) p-type

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90

Ec

(A) ‘

GNEc @ Ec

tue; td 1 1 •• * E _ —f C CibE _..- ....-fb E

E

. vbA

6*\® Ev

vbEv

jl .

(B) cc)

Figure 10: Band bending situation of a semioonductor (A) flat _band condition, (B) under negative potential, (C) under positivepotential, compared to flat band potential.

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91

(a) For each semiconductor/electrolyte system, there exists a

potential at which there is no electric field or space charge region in

the semiconductor. At this potential Ef = Efb. Efb is known as the

flatband potential of the semiconductor for the system concerned.

Under this condition there is no band bending occurring in the

semiconductor.

(b) If the semiconductor (n-type) is subjected to a potential of

negative Efb, the Fermi level moves above Efb and both the conduction

and valence band bend downwards (Figure 10B). Under this situation .

the electrons move toward the semiconductor/electrolyte interface and

the holes move towards the bulk of the semiconductor.

(c) If the semiconductor (n-type) is subjected to a potential

positive of Efb, the Fermi level of the semiconductor moves below Efb

and positive band bending occurs in both the conduction band and the

valence bands (Figure 10). Under this condition the holes flow to the

semiconductor/electrolyte interface and the electrons flow to the bulk

of the semiconductor. l

l

3.V Energy Scales ·

The band edges (EC and Ev) can be located on an electrochemical

energy scale as shown in Figure 11. The actual positions depend on the

nature of the electrolyte, especially the pH (31). The positions of

energy bands and the Fermi level may be expressed on an absolute vacuum

scale or with respect to any electrochemical reference electrode.

There are two different (33,34) energy scales which one uses in

photoelectrochemistry.

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92 «

_ ·2.0S ZflsécapC

e 2:10 'Ii0 H-P- ..

ENERGY•

2· •2,7 1.3 ' 1.0 H20/02

' 3.0 3.0 ?SQALI-Z . hp [LOVOLTS gd; .

3.0

**+4.0

Figure ll: Positions of conduction and valence band edges forseveral semiconductors at pH=l.0,(3l).

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93

(i) The vacuum scale (preferred by solid state physicists), which

considers vacuum level as a reference point, and all other possible

electronic energy levels are considered as lower than the vacuum level.

Therefore in this scale all the electronic energy levels carry negative

values.

(ii) The normal hydrogen electrode (NHE) is normally used by

chemists as the reference point. The two energy levels differ by about

4.5 eV, ie.

_

Enhe• — 4.5 eV vs vacuum A (11)

The redox potential of a redox couple (gf Q1) is considered to be

equivalent to a Fermi energy, which can be converted by the following·

equation:

EV + e Uredox) (12)

3.VI Semiconductor!Electrolyte Interface

In 1975, Gerisher (35) proposed a working model for a

semiconductor/electrolyte interfacial system. According to this model,

on a strictly thermodynamic basis, one can predict the electrochemical

processes of photoexcited semiconductor/electrolyte (redox couple)!

metal systems.

Compared to p-n junction photovoltaic devices or Schottky junction

[semiconductor/metal] cells, setting up a SLJSC is extremely simple.

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94

As shown in Figure 12, it can be formed by immersing a semiconduccor

electrode and a metal electrode in an electrolyte and externally

connecting them together, provided the semiconductor and redox couple°

energy requirements are satisfied. If the redox potential of the redox

couple lies in the band-gap region, then upon shining light on the

' semiconductor electrode, an electric current begins to flow through the

external circuit.

3.VI.A Equilibrium in the dark

As the Eradox for the redox couple lies below the Fermi level (EF)

of the semiconductor, electron flow occurs from the SC (n·type) to the

electrolyte forcing the reduction process.

A++e + A (13)

Due to this process there are two changes occurring in the

1 semiconductor. (i) EF moves in a positive direction in order to reach

equilibrium with the redox couple. (ii) Due to the depletion of

electrons at the surface region a positive charge develops in this

region and this in turn causes band bending in the surface region of

the semiconductor electrode. Under the present situation, positive

band bending occurs in both the conduction and valence bands, due to

the direction of electric field present. The electrons at the surface

Fflow into the bulk of the semiconductor, and any holes present move

towards the semiconductor/electrolyte interface. As the semiconductor

and the counter electrode are externally connected at the point of

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. 95 ,

ECE

/F EF

,“O></

RED

EvB

Figure 12: Regenerative SLJSC using n—type semiconductor.

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96

equilibration this Fermi level (counter electrode) also matches with

the Eredox of the redox couple. The space charge layer thickness may

vary from 50 — 2000 A, depending on the doping level of the

semiconductor. Dark equilibration is shown in Figure l3B.

~3.VI.B Illumination

If the semiconductor electrode is illuminated with light hv > Eb_g,

excitation of electrons occur from the valence band to the conduction

band. As the electric field exists at the space charge level, as in

the previous situation, the photogenerated holes (h+) move towards the

semiconductor/electrolyte interface and the electrons into the bulk of

the semiconductor. This reduces the recombination efficiency of

photogenerated holes and electrons, making more of them available forI

the photoelectrochemical process. The photogenerated holes possess

adequate oxidation power to oxidize the redox couple. Therefore ‘it

drives the oxidation reaction at the semiconductor/electrolyte

1 interface:

A+ 11+ + A+ (14)

The photoexcited electrons in the conduction band move towards the

bulk- of the semiconductor and flow into the counter electrode through

the external load resistor. These electrons in turn possess adequate

potential to cause the reduction at the counter electrode. This system

shows the operative principal of a regenerative semiconductor liquid-

junction solar cell, as there is no consumption of the redox species

during the photocurrent generation process.

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„ 97

2------- ES .

Ey· zggdcx

AW A _

Ev

SC Pt(A}

IE

@ E: ” Q? BCEf1 E Q/A+ E

"°‘ ‘ E1“"° 'T ¢ """" f A/A+

I SC PtI bv

SC I PtII / Ev Ev

„ 6*GI cc)

Figure I3: Semiconductor liquid junction solar cell (a) initial

conditions, (b) equilibrium under dark (c) photocurrent genera-tion under illumination.

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-U

98 .

In our studies we have been interested in photoelectrolysis of

water using n-TiO2 semiconductor electrodes. The principles underlying

this process are somewhat parallel to that of a regenerative SLJSC.

One major difference is the electrode reactions in this type of a cell

consumes the electrolyte (water) and leads to the synthesis of new

products (O2 and H2) by the oxidation and reduction processes of the

anode and cathode, respectively. The valence band edge of n-TiO2 lies

below (more positive) the oxidation potential of water, therefore the

oxidation of water by n-TiO2 is a thermodynamically favored process.I

But the cathode of this system [n-TiO2/electrolyte/Pt] has to be

negatively biased in order to carry out the reduction process at a

reasonable rate. This negative biasing of cathodes moves its fermi

level in a negative direction, so that the reduction of water is~

thermodynamically favored.

3.VII Blocking Behaviour of Semiconductor

For any system of ’semiconductor/electrolytes, there exists a

potential at which there is no band bending. This potential is known

as the flatband potential (Vfb). At potentials positive of Vfb the

bands bend upwards; consequently the electrons are driven towards the

bulk of the semiconductor and the holes towards the surface of the

semiconductor. At potentials negative of Vfb, the reverse process

takes place. The separation of electrons and holes under the influence

of surface potential is an important factor for an efficient photo-

conversion process. In n—type semiconductors the majority of carriers

are electrons. In the dark, potentials negative of Vfb cause negative

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99

lband bending in both conduction and valence bands. This drives the

electrons (majority carrier) to the semiconductor/electrolyte

interface. These electrons can be transferred to the oxidized species

in the electrolyte inducing a reduction process. Therefore n—type

semiconductors can act as dark cathodes. Under the influence of a

potential positive of Vfb (in the dark) the holes are driven to the

semiconductor/electrolyte interface due to positive band bending. But

the concentration of holes in the n-type semiconductor is so low (in

the dark), there is essentially no current flow across the interface;

the electrode is blocking. Therefore n—type semiconductors act as dark

cathodes and in the same token p—type semiconductors act as dark

anodes. 4

-4 3.VIII Efficient PEC Systems

There are several parameters which have to be optimized in order to

design an efficient photoelectrochemical conversion cell (32).

3.VIII.A Bandgap

The minimum energy requirement for the splitting of water into H2.

and O2 is 1.23 eV per molecule. Therefore, the Ebg of Sémicouductors

_ is designed to be in this range. In addition to that, as the Ebg

increases, the fraction of solar radiation that is unusable increases.

Therefore, the conversion efficiency obtainable from higher bandgap

semiconductors is quite low. An Ebg of up to 2 eV may provide an

acceptable conversion efficiency (31).

3.VIII.B Bandgap Location

The EC and Ev values represent maximum reduction and oxidation

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potentials of photogenerated electrons and holes, respectively. These

levels as well as the Vfb depend on the nature of the solvent and

specific adsorption on the semiconductor surface. For n—type

semiconductors, a more negative Vfb leads to a higher reducing power of

photogenerated electrons; and this maximizes the output voltage of the

system. For p-type semiconductors, a more positive Vfb leads to a

higher output voltage.

3.VIII.C Stability

The semiconductor should be stable under the operational conditions

of the photoelectrochemical cell in order to design a durable system.

This is particularly a problem for semiconductors with smaller

bandgaps. The underlying condition for the stability of the

semiconductor can be either kinetic or thermodynamic (33). The latter

is much easier to predict, and the former depends on the relative rates

of redox and the dissociation/decomposition reactions at the electrode

surface. Small bandgap materials such as GaAs and InP show increased

stability in non-aqueous systems (34). It also appears that a layer of

metal, or conducting polymer and electroactive polymer coatings

(35,77), or derivatization (36) efficiently remove a photogenerated

charge from the electrode surface and improve the stability in aqueous

systems.

3.VIII.D Doping Level

The thickness of the space charge layer and the bulk resistance of

the semiconductor are determined by the doping level. The doping level

should be adjusted with respect to the absorption coefficient of

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_ l0l

incident light so that most of the light is absorbed in the space

charge region. The excitation in the bulk tends to reduce the quantum

efficiency as the recombination rate (h+(VB) + e°(CB) + O) is higher in

this region.

3.VIII.E Redox Couple

The redox couple should be stable in both forms and should not

absorb energy above the Ebg. The redox potentials should be at

appropriate levels in order to capture holes and electrons.

The heterogeneous electron transfer rates should be rapid. The ability

of the redox to successfully compete (kinetically) with the electrode

decomposition reaction is essential.

3.IX Problems Associated with the PEC Devices·

As indicated above, conversion of solar radiation provides an

alternative means to meet future energy needs. The solar spectrum

consists of radiation from about 300 nm to 1500 um (36). In solar

conversion systems such as semiconductor liquid—junction solar cells

(SLJCS), it is best to be able to use most of the solar radiation. The

critical energy requirement for the splitting of water into H2 and O2

is 1.23 eV per molecule. This will be a little higher in actual

electrochemical systems due to H2 and O2 overvoltages at the

electrodes. Therefore it is best to use semiconductors with bandgaps

of 1.3 - 1.5 eV. Most n—type semiconductors which are best for this

purpose [e.g. GaAs, Si, CdS] have one major drawback in an aqueous

medium. The photogenerated electrons and holes, instead of being

injected into the solution and inducing the preferred redox process,

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102

may oxidize or reduce the semiconductor electrode itself, causing

decomposition (37). This causes a serious drawback with respect to the

durability and efficiency of the conversion devices. The larger ·

bandgap semiconductors do not pose this problem (e.g. TiO2, Ebg -3.0

eV). But they are transparent to a larger portion of the solar

radiation and, consequently, the maximum conversion efficiency

attainable is lower.

The thermodynamic stability of the semiconductor is assured if the

redox potential of the oxidative decomposition reaction lies below the

valence band edge and if the redox potential of the reductive

decomposition reaction lies above the conduction band edge (38). In

reality, this is not true for all photoelectrodes which are suitablel

for the conversion devices. Thus for n—type semiconductors the

oxidative decomposition potential lies within the bandgap; therefore,

oxidation decomposition will kinetically compete with the intended

oxidative reactions. The reverse is true for p-type semiconductors

i.e. reductive decomposition is present. Even if the redox reaction is

thermodynamically favored, the kinetic parameters may alter this

situation causing electrode decomposition.llt

is very hard to predict

the kinetic behavior, and one has to rely on experimental data. This

is the situation in semiconductors such as GaAs, GaP, and ZnO in

aqueous solutions.

There are several research groups who have actively studied the

problem in order to develop techniques to circumvent this situation.

Derivatization of the semiconductor surface with pseudo-metallic redox

polymers and with redox polymers have produced reasonable improvements

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l

l03

in the performance of photoelectrochemical conversion systems. These

topics will be dealt with in detail in a later section of this chapter.

As it has been presented in the previous chapter, we have developed

a technique to obtain monolayer coverages of simple, non—electroactive

silanes on TiO2. Our approach is to modify a single crystal of Ti02,

which is a stable photoanode in aqueous systems. We take advantage of

the stability of this system to study the survivability of silane

layers on TiO2 electrodes upon photocurrent generation, before

extending this study into more complicated systems (unstable

semiconductors) such as GaP, GaAs, and ZnO. The basic idea is to

reduce the activity of water at the semiconductor electrode surface by

forcing the charge transfer kinetics between the electrode and the

redox molecules/ions to take place at the surface of the hydrophobic

modified layer. It has been reported that silane layers bonded to TiO2

are stable against photocurrent generation in water (39). We have

surveyed a range of silane reagents as modification agents and also a

range of conditions under which their stability will be tested. The

key analytical tool is x—ray photoelectron spectroscopy (XPS).

3.X Survey of Chemically Modified Semiconductor Electrodes

Earlier, about tan years ago, the applications of chemically

modified surfaces had been strictly in non-electrochemical fields.

Chromatographers have used surface modification with silane reagents to

deactivate gas chromatographic columns and to synthesize bonded phases

for HPLC (40) on both silica and alumina substrates. In trace

analysis, glass wool has been derivatized with dithiocarbonate reagents

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. 104

to scavenge metal ions for ESCA analysis (41). Acid-base dye

indicators have been attached to silica surfaces to form "solid

indicators" (42).

The main objective of surface modification in electrochemistry is

transforming heterogeneous° unpredictable interfaces into more

controlled and predictable ones, of which there could be a wealth of

applications (43). For example, in semiconductor electrodes, the

surface states which exist in the bandgap region are little understood

and there is no way to control or manipulate their properties. By the

modification of these surfaces, one could control the surface4

properties in a more predictable manner. Another example is

electrocatalysis (44). The surface-attached molecules can act as fast

electronetransfer mediators for substrates dissolved in the solution,

_which may otherwise react very slowly with the bare electrode. _

Murray and co-workers pioneered the covalent attachment of

monolayers (45-52). They employed the —SiX3 moiety in silane reagents

containing amine, pyridyl, and ethylenediamine ligands in order to form

covalently bonded monolayers on electrodes such as Pt/PtO, S¤O2,

carbon, and RuO2. All these syntheses have been carried out in the

liquid phase4 under very carefully controlled conditions in order to

avoid the formation of polysiloxane polymers. The presence, stability,

4and chemical reactivity of these modified electrodes have been studied

by XPS. The surface-bound amine molecules exhibit the same chemical

properties as if they were free molecules.

Further, Finklea and Murray (50,51) have studied the

photoelectrochemical properties of silane-modified (liquid phase) TiO2.

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105 _ ·A

Titanium dioxide has attracted considerable attention due to its

stability against photoanodic dissociation in solar _ conversion,

devices. The inherent disadvantage of these Ti02 systems is a lower

_ efficiency of solar energy conversion due to its large bandgap (3.0

eV), and consequently, only a smaller portion of solar radiation is _

effectively used in the photoelectrochemical process (31).

Titanium dioxide, like the other oxides (e.g. Pt/PtO, Sn02, Ruoz),

contains surface hydroxyl groups which are capable of reacting with

silane reagents (equation 15) (52). ESCA studies reveal a 50%

‘reduction of the Ti (Zp3/2) signal compared to the naked electrode upon

bonding of a monolayer of silane.

MIZ-ou + x-six -. 1‘1|2os1R3 + ux (15)

An O(1s) peak develops at higher binding energY (S32 eV) and the

intensity of the original peak (530 eV) decreases. Furthermore, a

strong Si(2p) peak appears due to the presence of the silane moiety on

the surface. Neither the presence of unreacted surface hydroxyl groups

nor the homogeneity of the monolayer can be determined by ESCA. These

silane layers have been shown to sustain massive hole generation. This

is in contrast to our own observations of similar systems derived from

gaseous phase modification (53) as well as other reports (54). The

photocurrent voltammograms that have been obtained for both the naked

and derivatized electrodes are almost identical. This may either be

due to the fact that the modified layer does not impede the hole

transfer process or to the presence of a high percentage of unmodified

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sites. The Vfb determined for both types of electrodes have been shown

to be identical, further indicating the possibility of the latter

situation. j

Parkinson (SS) and Bard (56) have shown in separate reports the

ability to improve performance of systems with similar recombination

problems by selectively coating the recombination sites with

polypyrrole or t·butylpyridine via dark oxidation. The object is to

increase the resistance for electron transfer between these sites and

the electrolyte.

Yoneyama et al. (54) also have reported using photoelectrodes

modified with non-electroactive molecules and have obtained contrasting

results to the previous report by Murray et al. (50,51). They have

presented results on photocurrent generation of n- and p-type silicon

electrodes which were modified by the covalent attachment of trimethyl·

chlorosilane (TMCS) on p-type Si electrodes. Upon modification, a) H2

evolution at a p—Si electrode stops (this has been attributed to the

blocking of H+ adsorption sites on the electrode prior to the redox

process); b) the onset potentials of both derivatized and naked

electrodes are the same in Fe(CN)63°/4'—containing solution (Finklea

and Murray (50) also have reported similar observations); and c)

compared to the naked electrode (p—type Si), the derivatized electrode

sustains photocurrent generation over 100 potential scans in 0.0lM

K3Fe(CN)6 solution with very little decay of photocurrent. The slight

decay may be due to the oxidation of underivatized sites on the p-Si

surface. The n·type Si/TMCS modified layer fails to sustain

photocurrent generation.

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l07 .

Haller (51) has reported the modification of Si and GaAs with 3-

aminopropyltrimethoxysilane. The reaction has been carried out in the

liquid phase under very anhydrous conditions in order to prevent any

polymer formation. Electron micrographic studies show the absence of

any large (109 nm) size particles on the surface, and the presence of

monolayer coverage is demonstrated by adsorption and ellipsometric

techniques.

Wrighton et al. have conducted extensive studies of semiconductor

electrodes modified with covalently attached silylferrocene. All these

modifications have been carried out in the liquid phase. The n—type Si

anode is reacted with (1,1-ferrocenyldichlorosilane) in a dry isoctane

solution (58a). This electrode exhibits behavior of the surface-bound

ferrocene in an acetonitrile electrolyte which is free of any ferrocene

derivatives or other electroactive species. The potential scan rate

studies show that the peak current is linearly proportional to the

sweep rate, further indicating the presence of surface-bound

electroactive species. Integrated peak areas in the voltammogram give‘

the concentration of surface-bound ferrocene moiety. Hole capture by

the ferrocene kinetically outruns the oxidative surface corrosion .

reaction of n-Si. This precludes the formation of the $102 layer on

the n—Si electrode. In this study, Wrighton et al. have shown the

survivability of the surface-bound ferrocene moiety even in a

reasonably wet solution. A small decay of photocurrent is observed,

and this has been attributed to the oxide growth at the pinholes in the

derivatized layer. But this is minimal compared to the naked n—type Si

anode. The surface-bound ferrocene exhibits mediated electron-transfer

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108 „

reactions, and this is the first example of redox reactions mediated by

surface-bound species. Ferrocene-modified n-type Ge photoanodes also

exhibit enhanced stability towards photodecomposition (58b).

GaAs, also a small bandgap semiconductor (Ebg 1.4 eV), has been

studied by Wrighton et al. (59). This semiconductor has a bandgap

energy which is quite close to that which is required for photo-

assisted decomposition of water into H2 and 02, 1.23 eV. Incidentally,

GaAs exhibits the highest known efficiency for energy conversion in

Schottky barrier solar cells (60) and in liquid junction devices (61).

Wrighton and Bolts (59) have investigated both the underivatized and

derivatized GaAs with (1,1-ferrocenyl)-dichlorosilane in acetonitrile

containing 0.1 M“TBAP. The GaAs electrode which was derivatized with

(1,1-diferrocenyl)—dichlorosilane shows the expected redox

characteristics ofh the surface-bound ferrocene moiety both under

illumination and in the dark. Under illumination and in the presence

of a solution of ferrocene, diffusion limited oxidation/reduction

currents have been observed, as in the previous reports.

Wrighton et al. (62) have attempted to extend the study of n-type

(derivatized)—Si anodes into aqueous media. As it was evident in the

previous reports, the potential of oxidation of solution species does

not depend on the kinetics of hole transfer from the semiconductor to

the solution species but on the nature of the surface bound species.

This situation may be exploited in order to enhance the efficiency and

durability of solar energy conversion systems. In aqueous solutions,

the photoanodic corrosion of n-type semiconductors is very rapid

compared to that in non-aqueous systems, and consequently, the decay of

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photocurrent is also very rapid._ Even in the presence of redox couples

such as I-, Fe(CN)64- and [Ru(NH3)6]2+, hardly any improvement of this

situation has been observed. This indicates the inability of naked n-

type Si photoanodes to sustain the electron transfer reactions. Under

routine aqueous experimental conditions, passage of 10-8 molesl of

electrons/cmz is sufficient to form a passive $102 layer which

significantly attenuates the photocurrent. The general characteristics

observed in an aqueous medium of a derivatized n-type Si electrode are

—comparable to those which have been reported for non—aqueous media

(57,58,59). The derivatized electrodes have sustained photocurrent in

aqueous media in the presence of Ru(NH3)62+/3+ even after passage of

photocurrent to the extent of 1000 charge reversals of the surface-

bound species. Oxidation of Fe(CN)64-/3- and I-/I3- has been achieved

in aqueous media and a reasonably durable photocurrent is sustained by

the derivatized n-type Si electrode. But the overall efficiency

(light-to-current) for all these systems has been low ( 1%) even for

monochromatic light.

In contrast to n-type small bandgap semiconductors, p-type

photocathodes do not undergo photochemically-induced electrode

decomposition. Therefore, this property offers an incentive to use

. them as photocathodes in energy conversion devices. But, in the

literature (31) it has been pointed out that these p-type

semiconductors are poor photocathodes in general and specifically for

H2 generation. Further, these systems typically offer (31) lower

conversion efficiencies and photovoltages. The surface modification of

p-type semiconductors may provide a way to overcome this problem.

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Wrighton et al., have investigated derivatization of p-type Si with

N,N—dialkyl—4,4’-bipyridinium (also known as paraquat or PQ2+) (63,6a),

In CHBCN, both redox processes [PQ2+ + e- + PQ+ + e + PQ°] have been

observed upon irradiation of the electrode, but in aqueous

electrolytes, only the first redox process is reversible. These

surface-confined species have shown the capability of mediating

electron transfer to ferrocenium in the electrolyte.

In an earlier study it was shown that Pt is an excellent catalyst

for PQ2+—mediated” reduction of H20 tg H2 (53), Therefore, .

incorporation of Pt into the (PQ2+) polymer matrix should improve the

hydrogen generation capability of the modified p-type Si electrode. It

has been observed by the same authors that p-type Si, when coated with

Pt, is a better hydrogen—evolving electrode than either naked p-Si or

p-Si(PQ) systems (65). The Br- counter ion of P—Si/PQ2+ Sygteh can be

gxchauged with ptc162_ ions. The photoreduction of [P-Si/PQ2+,PtCl62—]

yields [p-Si/PQ2+•PC] [Br}2. In these systems, hydrogen evolution with

significant photocurrent density has been observed at 300-400 mV

positive of the water reduction potential whereas the naked p-type Si

or p-type Si/PQ2+ systems do not show H2 evolution even at potentials

significantly negative of the water reduction potential E(H2O/H2) .

The efficiencies that have been obtained for these systems (SZ) are the

best solar—to-chemical energy conversion efficiency achieved, at the

time of reporting. The long term durability of these systems has not

been tested, but in 10* reversals of the surface—bound catalysts, about

202 decay of efficiency is observed.

A major drawback of the covalently—modified photoelectrodes is the

inhomogeneity of the modified layer. Both Murray (50) and Wrighton

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(58) have indicated the possibility of the existence of active or

reactive sites on the electrode surface even after the modificationl

process. Later Murray and co-workers (66) have shown the superiority

of electrochemically-formed polymer films on electrode surfaces over

covalently modified surfaces with respect to thickness control and

homogeneity (pinhole freeuess) of the modified layer.

3.XI Experimental-

3.XI.A Electrode preparation

Disc electrodes (6.0 mm diameter) were cut from a single crystal

boule of rutile (Commercial Crystal Laboratories) exposing (001) face.

The discs were polished in Sp alumina for about 10 min each, rotating

the crystal position in every minute or so in order to obtain an evenly

polished surface. Polished crystals were heated in a quartz tube at

600°C for about 20 min in a H2 stream to dope the crystals and then

etched in conc. HZSOA at 250°C for about 1 hr. Prior to the

silanization these electrodes were steamed for 4-5 hrs to ensure

surface re-hydroxylation. The electrodes were repolished, etched, and

steamed before subsequent experiment.

Silanization

_ Derivatized TiO2 (rutile) discs were prepared by using the

silanization conditions developed in the previous section. The discs

were heated under vacuum for 2 hrs at 150°C•, 8¤d Wéfé ¢XP9S¢d C9

silane vapour at the same temperature, while controlling the silane

flask at 15oC. After 1 hr of reaction, the excess silane was pumped

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ll2

away for about 20 min and the discs were heated at 150°C for 2 hrs.

3.XI.C Electrochemistry

All the electrochemical measurements were, carried out in a

conventional 3-compartment glass cell, under Ar sparging. Photocurrent

generation was performed in four different electrolytes of varying pH:

0.5M HZSOA (pH 0.5), HSPOA/KHZPOA buffer of ionic strength 0.2 M (pH·

2.0), KHZPOA/Na2HP04 buffer (pH 6.0), and 0.1M NaHCO3/Na2C03 (pH 10.0).

The TiO2 electrode was irradiated with the water—filtered output of a

150-watt Xe arc lamp. The electrode potential was set at 1.0 volts vs.

SCE, using a PAR 173 potentiostat, and photocurrent densities in the

range 0.7 to 2 mA/cmz were obtained. The photocurrent generation was

terminated after approximately 1 coul of charge (3.5 coul/cm?) had·

passed. The photoelectrochemical setup is shown in Figure 14.

3.XI.D XPS

All XPS spectra were recorded on a DuPont 650B spectrometer with

the Mg anode. Titanium, oxygen, carbon and silicon signals were

monitored after the silanization and photocurrent generation

experimeuts. On each experiment a clean unreacted blank was run as a

control. The peak areas of the Ti(2p3/2) and Si(2p) peaks were

calculated by triangular approximation. Peak energies are referred to

C(1s) at 285.0 eV. '

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116

’ I6 I 1I

“ I_ I

I ITAI.—·•

· I II ., I = II : .i I

I I—* I I ‘

. I I“——··“II——‘., ®

13 ® I®

I I1 F7 ‘

I„„„....»I ~@ I"'T I

IFigure14: IPhotoelectrochemical experimental set-up:

1 light source 7 window°

Zoptical bench 8 glass frit

3 water 9 sparging arm

4 disc aperture 10 Ti02 working electrode

5 lens 11 SCE reference electrode

6 mirror 12 Pt counter electrode

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. ll4

3.XII Results and Discussion

[

3.XII.A XPS of Modified Titanium Dioxide

As it has been discussed previously the surface hydroxyl groups of

TiO2 react with silane reagents to yield a modified surface, as shown

in equation 15 (p. 105).

The XPS-spectrum of clean TiO2 has the following characteristics

with respect to the elements O(ls), Ti(2p), C(1s) and s1(2p) [Figure

15A and 16A].

(i) O(ls) shows a peak centered around'532 eV.

(ii) Ti(2p) shows two peaks centered around 459 and 462 eV.

(iii) C(1s) shows a relatively strong peak around 285 eV.

(iv) There are no s1(2p) peaks observed in clean TiO2 surface.

The surface structure of silane modified TiO2 shows several changes

in the XPS-spectrum with respect to the elements stated before.

1 (i) The O(ls) develops a new peak at the higher energy side. Au

attenuation of the lower energy (original peak) O(ls) peak is

also observed.

(ii) The intensity of the Ti(2p3/2) peaks are attenuated.

(iii) A new Si(2p) peak appears.

These XPS—spectral changes are shown in Figures 15B and 16B. The

‘ second O(ls) peak is believed to be due to the formation of Ti-O-Si

linkage during the process of surface modification. The reduction in

the intensity of the higher energy O(ls) peak may be due to two

reasons. It may be only (i) part of the surface Ti-OH groups

undergoing derivatization reaction, or (ii) the reduction of intensity

may be due to the loss of scattering O(ls) electrons for the presence

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115

As it has been discussed previously the surface hydroxyl groups of

TiO2 react with silane reagents to yield a modified surface, as shown

in equation 15 (p. 105).

The XPS-spectrum of clean TiO2 has the following characteristics

with respect to the elements 0(ls), Ti(2p), C(1s) and Si(2p) [Figure

15A and 16A].[

(i) 0(ls) shows a peak centered around 532 eV.

(ii) Ti(2p) shows two peaks centered around 459 and 462 eV.

(iii) C(1s) shows a relatively strong peak around 285 eV.

(iv) There are no Si(2p) peaks observed in clean TiO2 surface.

The surface structure of silane modified TiO2 shows several changes

in the XPS-spectrum with respect to the elements stated before.

(i) The 0(ls) develops a new peak at the higher energy side. An

h attenuation of the lower energy (original peak) 0(ls) peak is

also observed.l

(ii) The intensity of the Ti(2p3/2) peaks are attenuated.

(iii) A new Si(2p) peak appears.

These XPS—spectral changes are shown in Figures 15B and 16B. Theü

second 0(ls) peak is believed to be due to the formation of Ti—O—Si

linkage during the process of surface modification. The reduction in

the intensity of the higher energy 0(ls) peak may be due to two

reasons. It may be only (i) part of the surface Ti—0H groups

undergoing derivatization reaction, or (ii) the reduction of intensity

may be due to the loss of scattering 0(ls) electrons for the presenceu

of overlying surface (silane) layer.

Both Ti(2p) peaks show peak attenuation after the

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116·"GC‘ls) ‘

ons) T¢<2¤>

!\

Figure 15: XPS traces:l

Ca) OCls) and TiC2p) before derivatizationCb) OCls) and TiC2p) after derivatizationVertical scale 0Cls) - 102é units

TiC2p) — S12 units

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117

C(1s) „ s1c2¤>.

WMVC(ls)

l^ ”S1(2p)

Figure 16: XPS tracesz ·(a) C(ls) and Si(2p) before derivatization(b) C(1s) and Si(2p) after derivatizationVertical scale C(1s) - 512 units

Si(2p) - 128 units

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118 ‘4

Aof overlying surface (silane) layer.

Both ,Ti(2p) peaks show peak attenuation after thel

derivatization process. The changes observed in these (Ti(2p)) peaks is

also believed to be due to the presence of the overlying silane layer

present in the modified layer. These changes in the Ti(2p3/2) signal

can be used in order to calculate the thickness of the surface layer

(modified) using the following equation (67).

ITi(coated)/ITi(c1ean) · exp[_d/ATi] (16)

where d is the scattering layer thickness, ATi is the characteristic

scattering length of Ti photoelectrons. For Ti(2p3/2)this is reported

to be 1.7 um (67). The calculation of layer thicknesses based on

this equation shows the presence of approximately one to two monolayers

of silane on the modified TiO2 surface (1 - 2 nm).

3.XII.B Photocurrent Generation Process

~Titanium dioxide, which is a wide bandgap (3.0 eV) n-type

semiconductor, has been reported to be a stable photoelectrode (59).l

The conduction band edge is at +0.05 v (vs SHE) at pH-

1 (28). The

VFb at pH = 1 is reported to be -0.04 v (vs SHE), (53b). When

illuminated in the presence of a suitable redox couple, photocurrent is

generated. At the Ti02 anode oxidation of water occurs, and at the

cathode (Pt), reduction of protons occur. The redox reactions can be

written as follows:

Ti02 anode: 2H2O + 4h+ + O2 + 4H+ (17)

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119

Pt cathode: 4H+ + 4e- + 2H2I

(18)

V The cyclic voltammetric plots of TiO2 anode in the dark conditions

and under illumination are shown in Figure 17. In TiO2 the plateau of

photocurrent occurs around +1V (vs SCE) region. Since photocurrent is

nearly maximum at +1.0 V, this is the potential at which the stability

tests were performed.

3.XII.C Criteria for Silane Layer Stability

The objective of the surface modification of TiO2 was to force the

electron transfer process between the electrode and the electrolyte out

to the modified layer/electrolyte interface. Therefore a stable

silane layer is expected to remain intact both before and after the

photocurrent generation, ie. the XPS—signal due to Si would be expected

to be the same before and after the photocurrent generation process,

provided the other parameters such as instrument sensitivity remain

constant during the process of the experiment. In reality the latter ‘

situation was not true. The instrument sensitivity, measured by using

a solid sample, was found to vary to a certain extent from one day to

another and in certain instances between the beginning and the end of

the accumulation of XPS-data. Therefore, even if the same sample was

examined on different days, a certain variation of individual signal

intensities was observed. But examination of the intensity ratio

flsi/ITi] of the same TiO2 electrode yields reproducible results,

independent of ESCA_sensitivity (Table XXXIX). However, different

Isi/1Ti ratios were observed for different electrodes, ie. there was no

reproducibility of silane coverage from one electrode to another. This

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120 l

unQFlc>

E ¢

\co " ,\ " öS‘2-6‘-2.2. \ ÜUv ’

\ ·¤q¤{•‘ääl ••·4‘

.. S12‘é' 22·•-|

\ 2Ex

H"6‘3\ 3\ g=

\ E2um

. 05

‘„ ä·¤·¤~„ ¤„-«‘~„ · EggE-62_ QS-40*53

** E2?°‘ >~„-:1::ogva•• Er~^¤n

0· H0••

3*50¤DOJJ••-•¤>»I:-«¤¤•-4

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121~

r

Table XXXIX

X2§ _ISi/1Ti data of control electrode** .

Electrode IS1/ITi

T12 0.41 0.42 0.40 0.43 0.43

**· (1) This data is based on the measurements carried out over a

period of two weeks.

(2) This was a derivatized electrode.

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122

may be due to the surface reactivity of a particular electrode being

somewhat related to the prior surface treatments it has undergone.

Therefore, the criteria for stability of the individual electrodes

is defined as constantäää

before and after the photocurrent generation

process. In the case of loss of silane, Isi would be lower and ITi

would be higher, once the Variation for instrumental sensitivity is

corrected. Therefore in the event of an unstable silane layer the

observed Isi/TTi should be lower than that prior to the photocurrent

generation.·

3.XII.D Direct Silanization

The XPS data on directly silanized TiO2 is shown in Figures 18-20.

The upper bar graphs show the ITi after the silanization reaction and

after the photocurrent [cross hatched] generation experiments. The

· photocurrent generation experiments have been carried out in pH 0.5, 2;

6 and 10 buffers respectively. The upper bar graphs (open) further

show lack of reproducibility ofITi from one electrode to another. The

lower bar graphs show Isi/ITi ratios before and after silanization and

after photocurrent generation processes.

As it is evident in the upper bar graphs, the ITi signal in general,

has been reduced. After a detailed examination of XPS-traces, it was

observed that in general, after the photocurrent generation experiment

all the XPS—signal intensities of 0(ls), Ti(2p) and Si(2p) had been

lowered and C(1s) had slightly increased. This is believed to be due

to coating of the photoelectrode by a carbonaceous layer during the

photocurrent generation. Due to the presence of this layer, signal

intensities for O(1s), Ti(2p) and Si(2p) should be generally reduced.

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123.

I .Tl ·600 —

v S‘Cl400 y g ‘ 4* Q . •

200 9: ä änormal reactuon

Ü M ‘ ' ‘ 3.5 coullcmz

0*15 I .IcIeanl · 800 .- Tl

1 _ 0-10TI

W V6005 $2 rs gg9* 95 9* f

O Q! Oné-» 0-5 2 6 10

pH

Figure 18 : Bar graphs based on the XPS—·data of SiCI4· derivatizedl’i02

electrodes , before Eand aftehotocurrent generation.

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1241

In .:.00’

200 .

002 Uwlezsrclz‘ normal reactlon

Oe ·1 _ pg 3.5 coullcmzSl ä

·‘ . . r ·*li. ¤ 1 6$ P4 ·«.{ ¢· ßw ¤ 6

6 ä 605 2 6 10

Figure 1.9: Bar graphs based on the XPS-data of Me2S1Cl2-derivatized T10 zelectrodes, before E and after photocurrent generation.

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125

T IT; soo95>6 . ·5% ge gi ä

MeS¤C|38* 8ä 8* 8* normal reactlon0% ¢

0 gz n fe •,620.5 coullcm

[S_‘

lnlcleanl • 1200l . ._.. 01Ir

va‘ :2 2 2· 4

O 1.. 24 24 ze05 2 6 10

F1 ure 20: Bar graphs based on the XPS—data of MeS1C1 der1vat1zed T109 2 2electrodes, beforeü and after photocurrent generat1on.

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126

For this reason, the previously defined criteria for the silane layer

stability has to be further modified.

The XPS signal intensities for Ti(2p) and Si(2p) peaks are given by

the following equations.

ATI -1.7 nm (67)

ISi(coated)/ISi(silanized)d /^s1)

(20)

Asi = 2.2 nm (67)

d' = thickness of the carbonaceous overlayer.

By closer examination of these two equations it is evident that in

the event of an overlayer [of constant thickness] the ITi signal will

be more attenuated than Isi. Therefore,

I ISi(coated) Si(silanized)·:f··—·T—· ·i·?··——···—* > l (21)

Ti(coated) Ti(silanized)

This condition is reached with the assumption that the silane layer

was unchanged during the photocurrent generation process.

Therefore, the modified criteria for silane layer stability is

(i) If Isi/ITi increases after the photocurrent generation, it

indicates that the silane layer has survived the photocurrent

generation.

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_ l27

(ii) If Isi/ITi decreases or is the same as before photocurrent

generation, the silane layer appears to have been removed.

On the' basis of equation 19 it is difficult to give an exact

numerical figure or a range as a criterion for the silane layer

stability. This is determined by the thickness of the carbonacious

layer formed on individual electrodes and hence it is reasonable to

expect different ratios for Isi/ITi on different electrodes.

On the basis of XPS data obtained for chlorosilane-modified

electrodes (Figure 18-20) it appears that the silane layers did not

survive the photocurrent generation at all the pH’s. But the loss

appears to be lower at pH 2 and 6 buffers. In the case of

dimethyldichlorosilane (Figure 19), the silane layer seems to have

survived in the pH 6 buffer. In these directly modified electrodes

some silane loss is observed at one pH or another. But in 0.5M HZSOA

the loss of silane seems to be drastic. This further indicates that

the carbonaceous layer formed on the electrode surface during the

photocurrent generation step does not preclude the surface bound silane

decomposition or hydrolysis mechanisms. A general discussion on

_ modified layer decomposition mechanisms will be presented in a later

section.

In the prior soaking experiments which were carried out to

investigate the stability of modified layers in different pH buffers,

neither the carbonacious layer formation, nor the silane decomposition

[except at extreme pH buffers] was observed. Therefore, it seems that

the loss of silane and as well as the formation·of carbonacious layer

occurs during the photocurrent generation process. Somerjai et al.

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128

(68) have reported the presence of carbon contaminants on freshly

sputtered surfaces after exposure to triply distilled water.) But this

did not seem to be a problem in our soaking experiments of derivatized

electrodes.

3.XII.E Crosslinking Scheme

In the XPS studies of directly silane modified electrodes it was

evident that the silane layers did not show adequate stability during

the photocurrent generation, especially because the objective of the

derivation of these modified surfaces was to be used in systems

containing less stable photoanodes, such as GaP, GaAs, InP.

Therefore we have devised a two dimensional crosslinking scheme in

order to enhance the survivability of the modified layer during the

photocurrent generation process. In the kinetic studies of Hair and

Hertl (20-23), as well as the derivatization model discussed on

p. 36 (Chapter 2), it was evident that the reactive groups present in

di-, tri-, and tetrafunctional silanes did not react completely with

the surface hydroxide groups. Therefore, it is apparent that after the

first reaction the surface bound silanes still carried unreacted

hydrolytically unstable groups such as Cl, 0Me etc. In fact this was

evident in our infrared studies of methoxysilane-modified Ti02 surfaces

(p. 58).

Therefore, after the first derivatization reaction, the reacted

surface was exposed to water vapour (~20 torr) at room temperature.

This causes hydrolysis of unreacted Si—X (X = 0Me, Cl) bonds (Figure

21). Upon heating, this H20 vapour—treated surface forms intersilane

Si—O·Si linkages. This newly formed crosslinked surface has an added

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· 129

gg M 0 R

HX” IMC‘ M 0 xM 0** + xgsm -9 X

/M 0M MX

crgcssM M 0 R\S1/ ‘ >S1<

‘ ·— /9 vAcuu~1 9*Y 9 M 0-g1—R f ¤—§¤—R

9 / 0

Figure 21: Cross-linking scheme for titanium dioxide modification.

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130

advantage compared to the directly modified surfaces. In the latter

case the silane moiety is not only attached to the TiO2 surface, but

linked to the neighbouring silane moieties via one or two Si-0-Si links

as well. Therefore in the event that the silane moiety is detached

from ' the surface, still it has a reasonable lifetime in the

neighbourhood of its former site of attachment, as it is held by the

linkages to the neighbouring silane moieties. This provides a second

chance for the detached silane moiety to recombine with the surface,

and this in turn enhances the overall stability of the modified silane

layer. .‘

Therefore in the second phase, the derivatizatiou procedure which

is shown in Figure 21 was followed. In some instances the reaction

I

procedure was repeated in order to obtain a more homogeneous modified

layer. In the discussion this is referred to as a double crosslinking

process.l

3.XII.F The Stability of Crosslinked Modified Layers

Compared to the modified surfaces derived from direct surface

modification, the latter modified surfaces derived from the

crosslinking method (Figure 21) show overall ~enhancement of the

stability. This observed improvement of the stability of modified

layers is attributed to the mechanism which was discussed in the

previous section. ·

The best modified layer has been derived from SiCl4 followed by

SiCl2Me2 (Figure 22) derivatization. This surface shows a very good

stability in the three higher pH buffers (2, 6, 10). This may be due

to the hydrophobicity of the outer surface derived from Me2SiCl2, in

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‘131

6 00 Q Y Q Q1 ä N N ~Ti § § § §SICI4

i2 O O cross-·l1nked

O ae sä sm m MezwzW cross·Iinked

zO 3 2.4 coul/cm

I •· *7

· $1 Ii.i(clean) - sooTri „—— Ä Ä 2Nä0

nä am N6: . :a06 2 6 10

' PH Q -

Figure 22: Bar graphs based on the XPS-data of Ti02 eiectrodes modified

with SiC14/Me2SiC12; (UE after SiC14 modification(ii)afterSiCi4/Me2SiC12 modification (iii) after photocurrentgeneration.

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l32

_, which the —Si(Me)2 group induces the hydrophobicity and the —SiCl2

moiety provides an opportunity to crosslink to more than one silane

moiety in the surrounding. This situation seems to have produced the

best condition for the survivability of the modified layer during the

photocurrent generation process.

All the other crosslinked modified layers have been derived from

both tri- and tetrafunctional silanes. The hydrophobic nature of the

modified layers derived from these silanes is much less than that of

Me2SiCl2, due to the lower number of hydrocarbon functionalities

available in these silanes. The lesser degree of stability observed in

these surfaces most likely is due to this reason, in addition to the

enhancement of the stability due to the presence of the crosslinking

(Figure 23-26).‘

With some exceptions the following observations can be made on

l these crosslinked surfaces.

(a) The most silane loss is observed in 0.SM HZSOA.

° (b) The greatest stability is observed in the pH - 6.0 buffer.

(c) Moderate stability of the modified surfaces are observed in pH 2

and 10 buffers. _

3.XII.G Silane Decomposition Mechanisms

With all the efforts to make a homogeneous modified layer by

covalent attachment, it is doubtful whether this situation can be

achieved in reality. In our infrared experiments we have observed the

ability of silane reaction byproducts (HC1, NH3 and Me0H) to react with

surface hydroxyl groups of TiO2. This in turn removes some of the

surface OH species which are expected to react with silane, causing

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_ 133 ~V

I 600TF Q mesnomeia

ZOO pe •• N N „ - · -0 ä ß cross Ienked

O-2 _ 3.8 coullcmzYQ Q• .

$ ä lniclean) -600Isa g g

. •"[Ti °‘f M

7‘ éÖ •M W W

YY >O 4 lg Öß BÄ

0-5 2 6 10pH

Figure 83: Bar graphs based on the XPS·data of modified TiO2 e1ectrodes,

before and after Dhotocurrent generation.

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134ITT

1000sw500 Si(OMe)4·kä ät. hs ks 9999*9,O cross·I1nkedO'2 ” 2.4 coullcmz

I · \ 1 1 1 1 - 1900SI C 6311

I •0.1TI' j _ „

LA006 2 6 10 _. PH

Figure 24: Bar graphs based on XPS-data of modified Ti02 electrodes,before and after photocurrent generation.

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135

15OOT. In 1000T rc MeSiCl3

l Vj NY’ ‘

double500 ,‘

”‘cross-linkedi M M \ 1O ‘ ‘ 2.4 c¤ul/cm ‘

Q\_$ lnlcleanl

.ä. 0.10 \ Ü ww[T1 Q 12 1200

, '

0-5 2 6 10

pH

Figure 25: Bar grapns based on XPS—data of modified Ti02 electrgcee—after one silanizationafter two silanizationsafter Dhotocurrent generation.

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136 '

1500 „ ·ITI

Q’¢

MeSi(0N\e)¥§ 3 .. 500 qv §¤

‘ double · k d§ cross Inn e_ O ÄÜ äß Ä Ä ‘

2.4 coullcmz$1..

0.1

§ Intclean) - 1200 .ii \. ,»< __ u

O•5 2 6 10pH . . 4

Figure 26: Bar graphs based on XPS·data of modified TiO2e1ectrodes·

gQ.

{after one silanizationafter two siianizationsafter photocurrent generation

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l37

inhomogeneity in the modified layer. Both Wrighton (57) and _Tamura

(54) have observed decay of photocurrents of n-Si photoanodes which

were derivatized with silylferrocene and TMCS respectively. They have

attributed this decay to the formation of an oxide layer on the n—Si

electrode at the sites which were left underivatized. There may be

' additional underivatized sites on the Ti02 surface due to thermal

decomposition of surface -0H species. All these facts lead to the _

formation of an inhomogeneous modified layer.

During photocurrent generation, active hydroxyl radicals are formed

due to the following H20 oxidation reaction at the photoanode:

auzo + 4h+ + aon + 4u* (22)

aou + 02 + 2H2O (23)

The intermediate OH is a very reactive entity. At the sites of

surface inhomogeneity these species can reach underneath the modified

layer and attack Si-0-Ti linkages. This in turn could cause loss of

silane from the modified Ti02 surface.

In SiCl4-derivatized electrodes (Figure 18) the silane loss is more

severe than the other two silanes. This may be due to the lack of

hydrophobic groups on this molecule and hence greater accessibility of

H20 molecules to the electrode surface.

Wilson and Harris (69a) have studied ageing effects of singleA

crystal rutile anodes in 0.5M HZSO4. Scanning electron micrographic

studies of the (001) plane, before and after the photocurrent

generation have shown striking alterations of the TiO2 surface

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l138

morphology. Due to this reason they have raised doubts about the

ability to use wide bandgap Ti02 as a photochemical solar energy

collector. In a later publication (69b), Wilson et al. have reported

investigation of photocurrent generation in a series of electrolytes

using Ti02 photoanodes. In this study they have observed that the

photocorrosion of TiO2 did not occur in basic solutions and the

observed photocorrosion in 0.5M HZSO4 could be suppressed by the

addition of 1M cobaltous ions.

In our studies of photocurrent generation in 0.5M HZSO4, modified

Ti02 has shown the most drastic loss of silane in almost all cases that

have been studied. Murray et al. (70) have shown the stability of Sn-

O-Si linkages under extremely acidic conditions. By analogy, it is

reasonable to expect that Ti·O—Si is also stable in an acidic medium.

Therefore, it seems that the strong silane losses observed in acidic

medium are due to the morphological changes of the TiO2 surface during

the photocurrent generation process. .

Murray et al. (70) have demonstrated the rapid dissociation of

silanes from modified tin oxide electrodes in the basic media. Similar

behaviour can be expected from Ti—O-Si linkages as well. In our

soaking experiments also we have observed a severe loss of the

modified silane layer. _ - ” ‘

On the basis of the above discussion, it can be explained why _we

_ observe the best stability of the modified layers in the medium pH

buffer solutions. There are three different mechanisms operative

against the stability of the silane modified layer. The first

mechanism, ie. the decomposition of modified layer due to the

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139

photogenerated OH is common at all the pH buffers. The surface etching

or morphological changes of Ti02 have been observed only in lower pH

buffer solutions (during photocurrent generation). The silane linkage ~ -

decomposition is most drastic at basic pH conditions. Therefore, it is

evident that at both lower and higher pH buffers, there are two

mechanisms operative against the stability of the modified layer,

whereas in the medium pH buffer only one mechanism effectively operates

against it. This seems to be the reason why the best stability of the

modified layer is evident in the medium pH buffer solutions.l

3.XIII Conclusion

(1) Normal surface modification with simple silanes does not

preclude photocorrosion due to inhomogeneity of the modified layer.

(2) Crosslinking and capping of the modified layer with a

hydrophobic layer both enhance the stability of the modified layer.

(3) The modified layer seems to be most stable at moderate pH

values due to the absence of corrosion and bond disruption mechanisms

that are operative more extensively at extreme pH’s.

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4 Chapter 4 _

ELECTROCHEMICAL POLYMERIZATION

. 4.1 Introduction

Organic synthesis is a discipline which has been very extensively

developed during the last few decades and presently entertains a very

rapid growth. It involves the use of very specific reaction

conditions, such as catalysts, reagents, temperature, concentration,

and other experimental parameters in a very precisely controlled

manner. The much simpler and more selective synthetic potential of

electrochemical systems is not extensively used by the organicA

chemists. This is most probably due to the lack of published

treatments of electrochemical fundamentals as they specifically relate

to organic principles. Electrochemical systems present several

advantages; they are simple to operate, and control of the reaction

conditions ie. rates, reaction extent, etc., is much easier. In

addition to that there are a large number of electrode-specific

synthetic reactions which are not obtainable by other means (71).

Further, recent advances in electrochemical methods, especially in

polarography and cyclic voltammetry of organic compounds, have provided

more insight into the electrochemical applications in organic synthesis

’ (72). ”

,During the electrochemical process, a corresponding chemical

process must take place at the electrode for each electron transferred

140

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141

through the solution. There can be a number of competing oxidation or

reduction processes that take place simultaneously, provided that the

existing thermodynamic and kinetic conditions satisfy the requirements

for those processes. The control of the electrode potential may be

very useful under these circumstances. By proper selection of the

electrode potential certain possible reactions may be eliminated,

thereby enhancing the selectivity elements. The newer polarographic

and potentiostatic equipment which has higher performance with respect

to controlability and response can only enhance these possibilities.

The tremendous potential of the electro-organichchemistry has been

amply demonstrated in the published literature. Very difficult

syntheses have been achieved with remarkable simplicity, selectivity,

and high yields (71).„

The applications of electrochemical reactions in polymerization‘

have received much less attention even though there is a considerable

range of possibilities existing for the electrochemical synthesis of

polymers. The polymerization process may be induced by the passage of

current through the electrolytic cell in the presence of the monomer.

It may take place to a varying degree depending on current density,

monomer concentration, applied potential, etc. (71). Further, the

polymerization may be induced by electrochemistry of the monomer, or by

electrochemistry of species other than the monomer. The initiation

occurs by the generation of radical ions by electrochemical means.

Alternatively, electrolysis may be employed to scavenge or remove an

inhibitor present_ in the system, resulting in normal uninhibited

polymerization. The reactions taking place at the opposite electrode

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- 142”

to that at which the initiation takes place may act as a source of

termination or inhibition of electrochemical polymerization. The

prevention of diffusion_between the anodic and cathodic compartments

may improve the polymerization process. The polymerization by

electrochemical techniques may be controlled by several different means

(71):_

a) _The rate of the reaction may be controlled by the current—time ‘

profile.4

b) The molecular weight distribution can be controlled through

the variation of imposed current, concentration of monomer, etc.

c) New synthesis of polymeric materials may be possible through _

the coupling reactions generated by electrochemical means.

d) Polymerization of a particular monomer may be initiated by

selective voltage control.

It should be noted that, except for the initiating step, the _

electrochemical polymerization will proceed by the same mechanism as

the thermal polymerization for the same monomer system in a similar

environment. Once the initiating radical or anion is formed

electrochemically, whether by direct electron transfer at the electrode

or by interaction with a transient species, the further course of the

reaction is unaffected by the passage of electric current. Another

advantage of electrochemical systems is that it is possible to reverse

the current, or employ an alternating current, so that the chemical

environment is changed as a function of time, and the course of the

reaction is changed accordingly. On the other hand, some limitations

are imposed by electrochemical systems. The systems must have

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reasonable conductivities, chemical compatibility, and adequate

solubility characteristics. The choice of solvents and supporting

electrolytes also impose further limitations on electrochemical

systems. ,

The earlier studies of electrochemical polymerization have been

focused on a means to synthesize polymers in the solution medium (72).

The coating of the electrode during this process is unexpected and is

considered undesirable. This situation has been described by such

terms as 'electrode poisoning'. Subramanium et al. (73) were first to

attempt polymerization by electrolysis with the objective of depositing

these polymers (73,74) onto different materials to form protective

' coatings. In electrochemical polymerization, since the coating is

directly formed from the monomer, deposition is a more economical ‘

process and proceeds more uniformly than electrodeposition of polymers

on metal surfaces.

The rapid growth of enthusiasm for electrochemical1y—induced

polymerizationé as a means to synthesize modified surfaces is for

severalreasons;a)

Electrochemists are widely interested in tailor-made surfaces

with predictive and externally controllable properties (75),

specifically in the applications of (i) photoelectrochemistry and (ii) -

electrocatalysis.

b) The surface modification using silanes containing

hydrolytically unstable bonds is perceived not to be very successful.

After extensive work conducted in this respect by the Murray (45-49)

and Wrighton (57-59) research groups, they were doubtful if homogeneous

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„ 144 A

modified surfaces can be formed by silanization.·

Our work on silane-modified surfaces also raises similar) doubts

(l9,S3a). We hypothesiae that the loss of silane observed during the

photocurrent generation was due to the inhomogeneity of the silane

layer, enabling water molecules to move to the electrode surface at

unreacted sites. Water oxidation generates highly reactive OH•

radicals which in turn attack the silane linkages to the surface.

We were aware of the work done by Murray and co—workers (76) on

electrochemical polymerization of metal complexes containing vinyl

substituted ligands. They obtained homogeneous, pinhole—free,

mechanically robust polymer-modified surfaces. The proposed radical

polymerization of these complexes is that reduction is ligand—centered

rather than metal ion-centered. Sufficient radical character migrates

to the vinyl group by the resonance stabilization of complex so that

the vinyl substituents undergo polymerization (76). Substantiation of

this point has resulted from elemental ratio analysis of the polymeric

complex. This has yielded the expected atomic ratio based on the

monomer, indicating that the octahedral ligand structure of the metal

ion remains intact during the polymerization process.

With this information in mind, we have attempted the synthesis of l

non—electroactive polymer coatings by electrochemical means, using the

mouomers styrene, divinylbenzene, 4-vinylpyridine, N—methyl—4—

vinylpyridinium salts, phenol, and m- and p—nitrostyrene. The

polymerization process (via oxidation) may be envisaged as follows (in

this sketch Ar refers to aromatic moiety):

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145 · _

Ar — e + Ar + Ar + Ar + Ar Ar

The _polymer formed in the electrolyte adheres onto the electrode

surface due to adhesion or precipitation or both of these effects.

4.II Review of Previous Work

The discovery of organic polymers with electrical conductivity e.g.

[CH]¤, [SN]x, has encouraged the development of newer polymers for

various applications. The electrochemical polymerization (which is a

much newer aspect) has also received considerable attention in the

recent years due to the enhanced interest in surface modification for

the purposes such as stabilization of n-type photoelectrodes, surface

catalysis, etc. Diaz and co-workers have published a series of very

interesting papers on electrochemical polymerization (77). Conducting

polymer films of polypyrrole have been synthesized on Pt electrodes by

electrochemical oxidation of pyrrole (77). The monomers are linked via

the ¢-carbon atoms in the polymer. The electrical conductivities of

_ these films range from 10 — 100 9-1¢m_l·

In the second paper in this series (77b), Diaz et al. reported the

feasibility of varying the conductivity of these films by controlling

the composition of the initial monomer mixture of pyrrole and n-

methylpyrrole. This provides a means to synthesize copolymer films,

(pyrrole/n-methylpyrrole), with a range of conductivities. Further,

these films demonstrate the property that the poly—pyrrole films can be

switched between conducting and insulating behavior by mere potential

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control.”

Further, Diaz et al. (78) have reported the (formation of

polyaniline films by electrochemical·polymerization. They indicate

that these films are neutral and conductive in both the positive and

n negative potential regions, in contrast to polypyrrole films.

In a very recent report, Diaz et al. (79) Present the synthesis

(via electrochemical polymerization) and characterization of conducting

polythiophene films. Thiophene and most of its 3-substituted monomers

yield polymer films upon electrochemical oxidation. These polymers,

like the polypyrroles, show alternation between conducting andl

insulating behavior with respect to potential scanning.

Following the work done by Diaz and co—workers (77-79), Tourillion

and Garnier (80) have surveyed a series of pyrrole type compounds, e.g.

pyrrole, thiophene, furan, indole, and azulene. All of these monomers

yield conducting polymers upon electrochemical oxidative

polymerization. The presence of the counter ion in all of the cases

has been confirmed by XPSstudies.Earlier,

Murray et al. (45-49) have published a series of reports

on surface modification of electrodes with silane reagents containing

hydrolytically unstable bonds. They showed that the reactive groups

of this surface-bound species undergo chemical reactions in a somewhat

similar manner to free solution species. Pham et al. have published a

series of reports which are somewhat parallel to the above mentioned

work, but the surface modification has been achieved by electrochemical

polymerization of 2,6-xylenol and other alkyl-substituted phenols (81),

substituted phenols containing reactive aldehyde and carbonyl groups

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(81b), alcohol groups (CHZOH) (81c), amino groups (81d), aromatic

amines (82) and (d) quinols (83). In these investigations they employ

a technique called polaromicrotribometry (PMT), which is essentially a

measurement of the frictional coefficient between the electrode being

coated and a moving quartz slide. The variation of the frictional

coefficient has been correlated to the extent of electrode coating by

the electrochemical polymerization process.

Strojeck et al. (84) also have reported on the electrochemical

polymerization of phenolic compounds. 4-(2—pyridylazo)-resorcinol

(PAR) has an oxidation potential of +1.35 V (vs. Ag/Agcl) and continued

scanning across this potential causes passivation of the working

electrode (Pt) (gradual decrease of oxidation peak intensity). The

structure of the film formed has not been determined, but the authors

believe that the resorcinol unit of the PAR molecule undergoes

polymerization forming polyoxyphenylene type chains similar to those

reported by Pham and Dubois (81b). PAR has been reported as being a

strong complexing agent (85) and the Cu(PAR)22+ is considered to be the

most stable metal ion complex (log ß -38.2), and this complex

demonstrates that it also undergoes polymerization upon scanning across

+1.35 V. The polymer—coated electrodes show (a) total blocking of o-

dianisidine redox chemistry and (b) inhibition and decay of ferrocene

redox chemistry.

All of the electrochemical polymerization processes that have been

discussed so far besides pyrroles and thiophenes, involved aromatic

compounds containing phenolic or amino groups. It seems that the

presence of an aromatic moiety provides the right kind of stability to P

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the electrochemically-formed radical for polymerization. This may be

due to the resonance conjugation of free radical character around the,

aromatic ring. Crown ethers also,' in spite of some structural

dissimilarities, undergo electrochemical polymerization of aromatic

moieties (86). Le Berre et al. report the polymerization of benzo-l5-

crown-5, dibenzo-18-crown—6, and dibenzo-24-crown—8 ethers. Under

micro-electrolysis conditions the redox properties of the film obtained

are similar to that of veratrol, a trimeric product. The

polymerization is carried out under very anhydrous conditions in order

to prevent inhibition of the polymerization process by nucleophiles p

(i.e. H20).l

The other class of compounds that has_been extensively investigatedn

is the pyridyl derivatives. They include derivatives such as bi-

'pyridine and vinyl-substituted pyridyl and bipyridylmetallic complexes.

The foundation for all of these studies is the accidental discovery of

electrochemically-induced polymerization of methyl viologen(1,l’—

dimethyl-4,4-bipyridine) by Landrum et al. (87), even though there are

earlier reports of the synthesis of polyviologen by chemical means

(88). This report is one of the earlier ones that addresses the

question of heterogeneous electron transfer by surface—confined

species. The methyl viologen dication (MV2+) undergoes two single-step

reductions to form a neutral species. Once the potential is scanned

beyond ·0.9 V (vs Ag/AgCl) where the neutral species is formed, the

MV2+and MV+ cannot be regenerated. By a series of experiments,

Landrum et al. concluded that the failure to regenerate the spectra of_MV2+ and MV+ is due to the polymerization of MV°.

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149 .

In a somewhat similar study, Elliott and Martin (89) report the

catalytic reduction of horse heart ferricytochrome·c by l a

polyvinylviologen-modified electrode. N-vinyl-4,4’-bipyridine (VMQ+)

has been used as the monomer, Aand it yields an electroactive polymer

upon reduction. The surface-bound species exhibits a reversible wave

at -0.90 V. The alkylation of the free N-atom results in another redox

wave centered at -0.45 V. Both the po1yVMQ+ modified electrode and the

methylviologen polymer—modified electrode are capable of catalytically

reducing cytochrome-c. ·

The use of various kinds of initiators in order to induce

polymerization is very common in polymer chemistry. Following a

similar approach, Faulkner et al. (90) have synthesized coatings on

electrodes by inducing polymerization via electrochemicallyo generated

einitiators different from the monomeric precursors. The reduction of

1 mM benzophenone at -2.SV in dimethylformamideltetrabutylammonium

perchlorate solution containing vinyl monomers (styrene and

divinylbenzene) results in formation of copolymer films. The films can

be sulphonated to yield anionic sites. The surface—bound film, upon

soaking in Ru(NH3)62+ solution (aqueous), exhibits surface

electrochemical waves of Ru(NH3)62+. The Ru species is held by the

anionic sulfonate sites in the polymer.

Polyvinylferrocene films also have been obtained by self·initiation

via reduction as well as by benzophenone-induced initiation (90).

These coated electrodes exhibit the characteristic behavior of a

surface—bound redox polymer.l

In polymer chemistry there are scores of polymers which are derived

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from compounds containing vinyl groups, e.g. polystyrene and poly-DVB.

It is only natural that electrochemists also have developed curiosity

in electrochemical polymerization of vinyl-substituted compounds.

Ghosh and Spiro (91) have moved in this direction, first by

synthesizing (91) 4—vinyl derivatives of 4—methy1-2,2’ bipyridyl and

1,l0—phenanthroline. The Ru(1I) complexes of these vinyl-substituted

ligands have been employed in the synthesis of modified surfaces by

both hydrosilylation (of silyl derivatives) and electrochemically

induced polymerization. Both forms of these films show Ru(II/III)

electrochemistry, which degrades when the electrodes are subjected to

sufficiently negative potentials. A TiO2 electrode coated with poly-

Ru(phen)32+ exhibits dye-sensitized photocurrents due to the bound Ru

complexes.

Even though Ghosh and Spiro (91) established the synthetic

procedures for vinyl substitution of heterocyclic ligands, they did not

conduct a detailed study of electrochemical polymerization of these

. vinyl-substituted ligands or their metal complexes. But the synthetic

procedures they developed have set the basis for a series of very

interesting papers by Murray and co-workers (92—97) on redox-active

polymers formed by transition metal complexes of vinylbipyridine (vbpy)

and vinyldiquat. The first paper of this series (92) introduced the

synthesis of (electrochemically) redox active polymers, [Ru(bpy)2-

<vpy)2]2+. [R¤(vbpy)3]2+. [F¤<vbpy)3]2+. a¤d {R¤(bpy)2—(vpy)Cl]-

Standard procedures for synthesis of these complexes have been1

previously reported by Meyer et al. (95,96). The backbonding

interaction of H-electrons enhances the electron density on the ligand

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H-orbitals and the electrochemical reduction of the complex is ligand-

rather than the metal—localized (92). The polymerization of these

complexes is induced by electrochemical reduction which results in a

stable, adhering, pinhole·free polymeric film on the working electrode.

The complexes with di- and tri—vinyl substituents appear to be more

easily polymerizable than those complexes with mono-vinyl substituents

(94). These monomers have been employed in the synthesis of three

different types of polymers: a) homopolymers, b) co—polymers from

mixed electrolytes of complexes, and c) bilayer films which have been

synthesized by forming a polymeric film from one complex and

subsequently forming a second polymer film over the first. These

studies have demonstrated semiconductor·1ike unidirectional current

flow properties for the bilayer films (92,93,97).

The advantages of redox conductive polymers compared to non-

conductive polymers are: (1) the accumulation of polymer can be

observed by the gradual increase of redox waves due to the bound

species; (2) the extent of coating can be controlled readily; and (3)

the amount of the redox—active material and hence the film thickness

can be measured easily. These polymers have been synthesized on metal

(Pt, Au) and semiconductor (TiO2, SnO2) electrodes. The elemental

analysis of the homo—polymers shows that the coordination sphere of Ru

indeed remains intact during and after the polymerization process. The

chain propagation mechanism associated with electrochemical

polymerization has been demonstrated by formation of copolymers in

mlxed electrolytes (with respect to the various complexes); the

polymerization is initiated at a potential at which only one complex

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has any redox activity. The presence of the second polymer in the film

that is formed presents evidence for the chain propagation mechanism.

Bilayer films have been synthesized by the deposition of a second film

on an electrode which is already coated with a first film.·

In a study aimed at a better understanding of the electrochemical

polymerization of ruthenium vinylpyridines and vinylbipyridines, Murray

et al. (94) have investigated a) the relative ease of polymerizatn of

monomers with different number of vinyl groups, b) the composition of

polymer films, and c) charge diffusion rates through the polymeric

films. A range of metal complexes have been used in this study, i.e.

[Ru(vbpy)32+]. Fe(vbpy)32+]„ [R¤(vbpy)2Cl2], [R¤(bpy)2(bpy)2]2+•[Ru(bpy)2(vbpy>2]2+, [R¤<bpy>2(VPY)Cl]2+, ehd [R¤(bpy)(vpy)N02]+- The

substrates that have been used are Pt, Au, TiO2, and Sn02. No film

accumulation is observed by reduction of [Ru(bpy)3]2T, indicating the

importance. of the presence of the vinyl group on the ligand. The

complexes with more than one vinyl substituent undergo polymerization

with considerable ease. The redox waves of deposited films in a clean

electrolyte are very similar to those of the respective dissolved

complexes. Further, resonance Raman spectra of the films show the

expected pattern for ligand vibrations for the metal complexes. A

visible spectrum of po1y[Ru(bpy)2(vpy)2]2+ matches the monomer spectrum

with only a slight red shift of the main absorption peak. All of thisU

, evidence leads to the fact that the integrity of monomer coordination .

is preserved following the polymerization process.

As these polymer films consist of cationic species, they behave as

solid state‘ polyelectrolytes and show ion-exchange properties.

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Pt/poly[Ru(vbpy)3]2+ completely suppresses the redox chemistry„ of

m€¤hYlVi°l°8¢¤ di¢ä€i¤¤ (MV2+). Pt/p0ly[Ru(bpy)2(vpy)2]2+, when soaked

in aqueous ferrocyanide solution, shows persistent electrochemical

response of electrostatically bound ferrocyanide, when it is

transferred to a clean electrolyte. Similar observations have been

reported for poly-4-vinylpyridine (protonated) (98) and poly[N—methyl-

4-vinylpyridinium] (99) coated electrodes. In addition to that, these

highly cross-linked films exhibit size—exclusion. For example, poly-

· [Ru(vbpy)3]2+ excludes both the cationic [Fe(bpy)3]2+ and the neutral

[Fe(CN)2(bpy)2], whereas the smaller ferrocene (neutral) diffuses into

the polymer film at a measurable diffusion rate. The oxidation of

[Fe(CN)2(bpy)2] does not occur until the [Ru(vbpy)32+] film reaches its

own redox potential, at which point the Fe complex is oxidized by

mediated electroh transfer. Further, this exclusion of cations and

large neutral species indicates that the modified surface is free of

pinhole defects.l

The chain propagation step involved in the polymerization process

has already been discussed (92). But this does not seem to be a

completely general effect because the reduction of vinyl diaquat

dication at -1.0 V in the presence of [Ru(vbpy)3]2+ monomer does not

produce a copolymer. Also, the polymerization efficiencies that have

been observed for most of these systems are much lower than expected.l

In the event of an efficient chain mechanism the film coverage should

very much exceed the amount of charge passed during the initiation

step. But the rate of the polymerization reaction is coupled to

several factors:

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a) the rates of mass transfer to the electrode and reduced monomer

away from the electrode;

b) reaction of the reduced monomer with fresh monomer in the

diffuse layer;

‘c) eventual oxidation of radicals and film by trace impurities

such as 02 in the electrolyte, which essentially terminates the

polymerization process;

d) the soluble oligomer which remains in the solution;

e) particulate polymer which does not adhere to the electrode.

These factors may well account for the lower efficiencies of the

polymerization process.

Another potential application of the coated electrode is pH sensing.

Heineman et al. (100) have reported pH response of coated electrodes

derived from 1,2—diaminobenzene. The oxidation of the diamine in pH-7

buffer is irreversible, with gradually decreasing peak currents on

successive potential scans. In the range pH 4 — 10, these coated

electrodes yield a linear response with a slope of 53 mV and a linear

correlation coefficient of 0.991. However, Cheek et al. (101) showed

that phenol—coated electrodes and even bare Pt electrodes exhibit_ a

potentiometric response to pH.

4.II.A Characteristics of Surface Bound Redox Species

As it has been already shown, the chemical modification of

electrodes could be brought about by (i) covalent attachment of

molecules to the surface functional groups (ii) electrochemically

induced polymer deposition. Regardless of the way the surface

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_ 155 ·

modification is carried out, the surface bound species essentially

carry the same electrochemical characteristics (102).

(i) The amount of electroactive species bound to the electrode

surface can be measured by the area [number of Coulombs, Q] under the

particular redox wave. The number of molecules bound to the surface

can be determined from this with the knowledge of n, [number of

electrons] associated with the particular redox process. Further,

surface density of redox active material (P) is given by

1* E-FK . (26)

ii) In a mass transfer controlled redox system, the peak

° separation, AEP • [Box - Ered] > gg , the equality being for reversible

_ systems. For an ideal cyclic voltammetric behavior of an electrode

surface—confined species (reversible redox), AEP should be zero.

Deviations from ideal behavior may occur due to the resistance) to

electron transfer between the electrode and the surface bound redox

species due to the (a) thickness of the layer, (b) resistance to

' counter ion flow, etc. _

(iii) The surface bound redox species ideally should yield linear

‘ ip dependence to scan rate. Ip is the redox peak height of the surface

bound species;' unlike the mass transfer controlled system, the peak

current (ip) is directly proportional to the scan rate (102).

2 2 C*i S n F v (25)p ZRI

v - scan rate.

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156

4.III ExperimentalA

Comercially available reagents [Aldrich] were used without

further purification. Divinylbenzene (DVB), analyzed by both GC and

HPLC, showed the presence of all three isomers.

4.III.A Synthesis: [N-methyl-4-vinylpyridinium salts]

4 ml of 4—vinylpyridine (Aldrich) in 50 ml of dry ether (Fisher)

was cooled to -lO°C. 10 ml of methyl iodide (Fisher) was added

gradually, with stirring. The mixture was kept at —10°C overnight,

filtered and was washed with dry ether. On some experiments the

counter ion (I-) was replaced with BFa— by metathesis. N-methyl-4-

vinylpyridinium iodide was dissolved in a minimal amount of water and

this was mixed with saturated solution of NaBF4 (0.5 ml). The mixture ‘

was centrifuged and the supernatant liquid was discarded. The

centrifugate was dried in the vacuum line. A solution of this solute

in acetonitrile was used for the electrochemical polymerization

reaction.

4.III.B Electrochemistry °

The three compartment cell used in the electrochemical experiments

was first cleaned with soap, secondly with methanol. The frits of the

cell were cleaned by forcing through them both water and methanol under

suction. Thirdly the cell was heated for 3-4 hrs in hot concentrated

HZSOA. Both the cell and frits were finally rinsed with deionized

water and stored in the oven at 110oC.

At the beginning of each experiment the hot cell was stoppered with

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~ 157

serum septa uwhile Ar was flowing through the cell. Acetonitrile

(Burdick and Jackson) .was stored over activated molecular sieves

(Fisher) to ensure dryness. In the electrochemical experiments the

electrolyte was 0.1M tetraethylammonium perchlorate (TEAP) (Eastman) in

dry acetonitrile. The TEAP lwas also dried at lO0°C prior to the

electrolyte preparation. The electrolyte was transferred into the

argon-purged electrochemical cell through a chilled (—z0°C) alumina

(Fisher) column to ensure the dryness. The working electrode

compartment was quickly stoppered with a serum septa. The electrolyte

was forced into the other two stoppered compartments by sucking air in

those compartments with a syringe.

The working electrodes and the counter electrode were platinum

beads sealed in soft glass, platinum rotating disc electrodes (Pine

Instruments), or gold flags attached to gold wire. The working and‘

counter electrodes were cleaned by (a) heating in hot concentrated

HZSOA for several hours, and (b) subjecting them to 02 and H2 evolution(

in 0.SM HZSO4 acid until the characteristic clean cyclic voltammograms

of the metal electrodes were obtained. All the potentials were

measured against a NaC1—saturated calomel electrode (SSCE).

Deposition of the polymer was carried out by multiple potential

sweeps through the appropriate oxidation or reduction wave. During the

first scan a large oxidation or reduction wave was evident due to the

redox process. Rapid passivation of electrode was evident after the

first scan indicating the coating of the electrode surface. After 10-

20 scans the electrode was removed, rinsed with methanol and stored at

60°C in the oven.

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158 °

X—ray photoelectron data of the polymer layers were obtained on a

”Kratos XSAMSO instrument using a Mg anode.

__ _ A Pine Instrument (Philadelphia, PA) rotating disk set up was used

in the rotating disk voltammetric studies. Teflon shrouded Pt disk

electrodes of 7.0 mm diameter and rotation speeds up to 4900 rpm were

used in these studies. All the electrochemical reagents are the same

as in the previous experiments.

4.IV Results and Discussion

4.IV.A Vinyl~Polymerization

The polymerization of inorganic complexes containing vinyl groups

has been reported by several research groups (91,94,95). In these

studies the ligands are aromatic components which are reducible by

electrochemical means. Once the radical is formed within the aromatic

component, conjugation transfers the free electron to the vinyl

component which in turn induces the polymerization. This process may

be visualized as followsz

a) Formation of monomer by electrochemical reduction

M+ e' + MF (26)

Propagation step

M-- + 11(M) + (MINI)--(

(27)

As discussed earlier, Murray et al. have demonstrated that there is

a chain propagation step involved in the polymerization process (94).

The proof lies in the co—polymerization of two vinyl—substituted metal

¥

complexes at a potential where only one of the complexes is reduced.

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~ 169

Thep chain termination step is much less clear. There are several '

possible mechanisms (72b),

c) combination of cwo radical chains

(Mn).°+ (Mm)? + M¤+m2°“ (28)

d) abstraction of a procon from a solution species

(Ma)- + ux + Mum + x' (29)

e) electron transfer with oxygen present in the solution

We have attempced polymerization of series of organic compounds:

divinylbenzene, 4-vinylpyridine, styrene, p- and m-nitrobenzene, N-

methyl-4-vinylpyridinium salts and phenol. Table XXXX shows the

oxidation and reduction potentials of these compounds of interest.

From these divinylbenzene, _4-vinylpyridine and phenol yielded polymer

films upon oxidation. N-methyl—4-vinylpyridinium salts yielded a

polymer film upon reduction.

The polymerization scheme for 4-vinylpyridine may be visualized as

follows. In 4-vinylpyridine, che highest electron density is located

at the nitrogen atom so the abstraction of an electron from the lone

pair on the N-atom is most favorable.

—>· (29)

n :9::112CH:-GHZI

_ ij} _1., 1E

””_

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160

Table XXXX

Redox potentials of aromatic monomers ##

first reduction(volts) first oxidation(volts)

::¤% . „ A· u I _

’ -2.45 +1.90cm::H2 ·

[ägägg}- ¤:::x2 -2.30 +1.75

.__cu2

(ZI:) -1.30“

+2.12

1;UCFZCHZ

@u

— **6

i$¢(ref.SSCE) '

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161

The formation of polymer chains may be visualized as follows;

iH——cH;‘/il-——~BE;CH2_ °cu--ca2...... '•

I I , I , I I I (31)IO~Ol

ä §• 4

The oxidative polymerization of divinylbenzene and the reductive

polymer formation of N-methyl-4-vinylpyridium salts should follow a

similar sequence in_the polymerization process as the initial step is

very much similar to that of 4-vinylpyridine.

4.IV.B Polymerization of Phenol _

In a series of papers published on electrochemical polymerization

of phenolic compounds, Pham and Dubois (81) have proposed the initial

step _to be the formation of the phenolate radical by electrochemical

oxidation. These studies have been carried out in alkaline methanolic

media whereas our studies have been done in non-aqueous media. In

spite of these differences, formation of phenolate radical seems to be

a reasonable initiation step even though through a different mechanism.

O

-— H *· H :03 + 5*

Ls

.>After-the polymer deposition using phenolic solutions, there is

always a reduction peak around -0.7 V (vs SSCE) when the cyclic

voltammetric scanning is carried out using a clean electrode. This

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}62 „

reduction peak does not appear before the deposition step and is

believed to be reduction of H+ ions generated during the deposition

step. The phenolate radical ion can undergo resouance conjugation as

follows:

„ O · O-°fol .

I

•-

+9 jk") (33).Q O

The proposed propagation mechanism is as follows:

O

OH

\. /,/ ‘“

pH. \l/. (34)

OH

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163

\ „4-

‘\-H

The propagaclon can take place ac orcho and para posicions of the

aromacic moiety.

The proposed cermination mechanism is as follows:

electro-V

H• _ chealcel H4 .oxidation _.O: .• + ' Ü _. .... H [

/2 _.. CN (37)

H sl-

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164

Similar termination may· take place at ortho/ortho, ortho/para

positions as well. In these phenol derived polymers, the presence of

the C-0-C (polyoxide) linkage has been demonstrated by both infrared

· spectroscopy (absorption bands around 1200 cm-1 (81b)) and by XPS C(1s)

peak at 286.60 eV (81b).

. 4.IV.C Stability of Electrochemically Formed Radicals

It appears that for successful polymerization the

electrochemically-derived radical should be neither too stable nor too

unstable. In the former case the polymerization would not be

thermodynamically favored. In the latter case polymerization would

likely be inhibited by radical quenching mechanisms. We have attempted

polymer-coating synthesis by using meta- and para-nitrostyrene as the

electroactive monomer. But in both of these cases polymerization did

not occur. This may be explained by the radical stability.

CH'_;CH2 culaz

(.38)~

,‘b(N£Q; N+;• .,—It

may be that the reductively-formed radical is strongly localized

in the N02· structure, thereby enhancing the stability and preventing

the transfer of radical nature to the vinyl component. Both these

factors are unfavorable for effective polymerization (72b).

If the radical species formed is too unstable, the chance that it

will be quenched by other species present in the electrolyte is high.

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165 .

On this basis, it appears that the moderately stable radical species

offers the best chance for the effective polymerization. There are

several instances where even though the radical formation is observed ·

electrochemically, the effective polymerization does not occur. First,

reduction of styrene, DVB, and 4—vinylpyridine occurs beyond -2.0 V (vs

SSCE) where the reduction of residual water also takes place to a

considerable extent. The quenching of radical monomers may be

occurring by the reactive intermediates formed by water reduction.

Second, a similar phenomenon is observed for the oxidative

polymerization of styrene as well. The oxidation of both the styrene

and residual water occurs at about the same potential region (just

beyond +2.0 V) [vs SSCE]. A partial passivation of styrene oxidation

is observed, but total and permanent passivation of theworkingelectrode

is never achieved. .

4.IV.D Polymerization ofDVBUpon

scanning the working electrode (Pt) potential in the presence

of DVB, an oxidation peak is observed about 1.6 V (vs SSCE). In the

subsequent scans this peak is drastically attenuated indicating the‘

passivation of the working electrode. If this process is carried out

in the presence of ferrocene, (Figure 27), during the first scan a redox

wave of ferrocene is observed around +0.4 V (vs SSCE). But when the

scanning is continued, the ferrocene wave disappears gradually. For

the DVB oxidation peak, there is no corresponding reduction wave except

for a relatively weak reduction peak around 0.0 V (vs SSCE). As the

' passivation of the working electrode continues, this reduction peak

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166

„I5v¤

/I/ Il

10mm DVB I! ,7I

Ill

I I,

/

ll

+1 + 2

Figure 27: Electrochemical deposition of DVBClOmm) in the presenceof 0.5mm ferrocene Ca.) scan 1 Cb) scan 10, in 0.1M TEAP.

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r167

disappears, indicating that it is due to species that are in the

electrolyte, rather than on the electrode (Figure 28). Also, scanning

of the coated electrode in a clean electrolyte does not show this

reduction peak. So this peak (0.0 V) may be attributed to lower

molecular weight soluble dimeric or oligomeric species generated during

the electrochemical polymerization process. These results indicate a

change in the chemical nature of the DVB molecule during or after the

oxidation._ Depositions were carried out both at 10 mM and 100 mM

concentrations of DVB. Strangely, the oxidation current observed at

the higher concentration is about 102 of that observed for the lower

concentration (Figures 28, 29). Therefore, the amount of monomer

radicals generated appears to be about 80-902 less than that in the

former situation. But, the coated electrodes derived from higher1

concentration solutions show a greater blocking of solution redox °

couples compared to that of lower concentrations. This indicates that

there is a much larger amount of polymer coating on the electrodes

prepared from higher concentration solutions. This observation can be

attributed to the more rapid chain propagation step associated with the

higher concentration of DVB solutions, causing the deposition of larger

amounts of polymer on the electrode. A more rapid deposition and

passivation of the electrode at higher monomer concentrations would

account for the smaller peak current.

The thinner polymer coatings derived from DVB cause asymmetric

redox peaks for both ferrocene and nitrobenzene (Figure 30). In

4 the case of ferrocene igx : iged ¤ 32:24. For nitrobenzeneigx : iäed • 30:45. In cyclic voltametry the peak current (ip) can

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163

_ C1

'mmm DVB

I SO pci .

,1/

„ .‘”

x

· I + 1

Figure 28: Electrochemical deposition of DVB(lOmm), (a.) scan 1

(b) scan 2, in 0.1M TEAP.

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169

G .

I6 14:1 _

SO mmUVB ;b

·/•

Ä ·{ 1 L

4 4O +1 +2

Figure 29: Electrochemical deposition of DVB(80mm), Ca) scan 1(b) scan 2, in 0.1M '1'EAP.

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170 ~

'8 .><OG-

HQ.w-I

¢N

, Ol

+ N aa"’äl UOé:og jfÖ aus-

U

ääß

_'

Ä

¢¤

Q)UO

CD’*

·•->

UGJ

. GJ

Ucp-

¤ tää3.

°““‘UI-- _

LO mz>•—•Q•

IL-—-lIG‘bm

ß 3.*;.¤ > -.3. .Q

Q;

LL »¤· ··%7

_¢¤CI:

ON

\ o.¤•-Läa->LQE

¢\l <r ¢*'>___

'

$0 2.):_Uli Sw-¢ UWQ

••-»~

u·¤ L:-.¤C-'UUNG--¤·v-IOß-J••u><°•"OG-

7Z·•-*

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° 171

be expressed as follows, where k is a constant and

.. ip = R • um R D1/2 c* W2 (39) °

Other symbols have their usual electrochemical meanings except D. All

the other parameters in this equation are the same for' both the

oxidized and reduced species. D the diffusion coefficient, determines

the mass transfer rate of electroactive species to the electrode. For

ferrocene, it appears the mass transfer rate through the polymer film

is more favourable for neutral species (reduced) than the positively

charged species (oxidized). [i;x :iged

= 32:28] Therefore, it

appears that the polymer film is either negatively charged or neutral.

For nitrobenzene, it appears that the mass transfer rate for neutral

species (oxidized) is more favourable than that for negatively charged

species (reduced). ligx : iged= 30:45]

In the above two examples mass transfer rate for neutral species

through the polymer film was more favourable over both positively

charged and negatively charged species. Therefore on the basis of

relative mass transfer rates of species through the polymer film, it

appears that the polymer film is neutral.

The XPS studies conducted for film thickness measurements have

Vyielded further supporting evidence for this proposition. The

supporting electrolyte used during the film deposition was tetraethyl-

ammonium perchlorate (TEAP). If the derived polymeric film was

charged, it would have trapped corresponding counter ions in order to

maintain the charge neutrality of the film. In the XPS studies there

i

was no evidence observed to indicate the presence'of

either the

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172 _

cation ((Me)aN+) or the anion (ClO4—) in the film. A weak 0(1s) peak

was observed initially, but this peak disappeared with minimal surface

etching. Therefore, both of these pieces of evidence support. the

proposition that the films derived from DVB are neutral.

Similar cyclic voltammetric behavior has been observed for both

films derived from 4—viny1pyridine and phenol, therefore, these films

are also believed to be electrically neutral in nature.

4.IV.E Coated [thicker] Electrodes in Ferrocene Electrolytes

Figure 31 shows the behavior of a coated electrode [in 100 mm DVB]

in the presence of 1 mm ferrocene. Curve_ä is observed when the coated

electrode is scanned in positive direction, beginning from zero

potential. Similar behavior is maintained if the potential is reversed

at zero after each negative scanning. Coated electrodes, especially

those derived from 100 mM DVB solutions, show severe attenuation of

ferrocene redox (Figure 31) behavior. Similar peak attenuation has

been reported by other workers as well (81,84). This occurs to a much

lesser extent with the 10 mM DVB-derived electrodes. In the latter

case, a slightly larger peak separation is noted as well. As it has

been discussed above the films derived from DVB are neutral and do not

have any redox or variable valency sites that would induce redox

conductivity in the film (103). Therefore, the film behaves as

insulation between the electrode surface and the electrolyte, hindering

mass-transfer to the electrode. The dramatic attenuation of redox

activity of ferrocene for the thicker coatings as well as the increased

peak separation for the thinner coatings are mass—transfer effects.

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173 '

I5 im S

*2 -1 „

Figure 31: Cyclic voltanmetry of a poly-DVB(l0O mm) coated electrode in 1 mmferrocene a) befere negative scanning bi after negative Scanning, eiectrgiyte0.1M TEAP.

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174

Two anomalous phenomena are observed (Curve E) Figure 31) when the

potential of the coated working electrode is scanned more negative thann

-1.0 V (vs SSCE):

a) a weak prewave appears prior to the oxidation wave of ferrocene

(Figure 31),

b) the redox behavior of ferrocene is dramatically enhanced _

compared to the result before the negative potential scan is done.

The prewave phenomena has been observed with the other three

derived polymers as well. It occurs only prior to the oxidation wave

of ferrocene, and only when the coated electrode is subjected to

potentials beyond -1 V (vs SSCE). The observed prewave was small in

the cases of divinylbenzene, 4-vinylpyridine and N-methyl—4-

vinylpyridinium derived polymers. In contrast phenol coated electrodes A

consistently show a strong pre—wave. Scan rate study of phenol derived

pre-wave did not yield a linear relationship between peak intensity

(ip) vs scan rate, indicating that the prewave is not due to ferrocene

that is bound to the electrode surface. Similar pre—waves have been

observed with both mono- and di-acetylferrocene on poly-DVB—coated

electrodes.U

This prewave may be explained by alterations of polymer structure

due to potential scanning which generates deformed sites. Ferrocene

may be trapped in these randomly deformed sites, which are away from

the electrode surface, so that there is no direct electron transfer

between the electrode surface and the trapped ferrocene. But when the

electrode potential is scanned close to the oxidation potential of

ferrocene, a minimal amount of ferrocenium ions is generated. The

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‘175

n

small spike prior to the solution ferrocene oxidation may be due to the

mediated electron transfer of the ferrocene trapped at the deformed

polymer sites via the newly generated ferrocenium ions. It may be that

we do not observe corresponding reduction peak due to the extrusion of

charged ferrocenium ions from the neutral deformed polymer sites.

Further, the prewave phenomenon is consistently much more prominent

with polyphenol coated electrodes than the other three types of polymer

coated electrodes. Therefore it appears that entrapment of ferrocene

during the potential induced polymer deformation/rearrangement is most

prominent with poly-phenol coated electrodes. There is one remarkable

difference in the phenol polymer and the three polymers which are from

vinyl compounds. The vinyl polymers basically consisted of

carbon/carbon bonds which were formed during the polymerization

process. But, in the formation of poly-phenol polymers, the polymer

chain formation occurs through carbon/oxygen/carbon [C-O-C] bonds. It 4

may be that these C-0-C linkages are more susceptible to the immense

potential gradient imposed· upon the thin polymer film by potential

scanning. Due to this reason it is possible that poly-phenol polymers

trap more ferrocene at the deformed/rearranged pockets in the polymer _

network.

The second phenomenon (b) (Figure 31) is more complicated in nature

and has not been previously reported in the literature. The following

mechanism is hypothesized.

(i) During the deposition step, the electrode surface is

positively charged (+1.6 V) and therefore, there are a considerable

number of ClO4- ions migrating towards the electrode. During the

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176

g _ polymerization process it may be that intermolecular voids are formed

in the polymer matrix so that it can accomodate species of the size of

tetrahedral ClO4— ion. As the potential is scanned positively and back

towards zero volts, the flow of ClO4— ions in and out of the polymer

matrix should occur in order to ueutralize the charge on the Pt·

electrode surface.

(ii) When the negative scanning is carried out, the electrode

surface acquires a negative charge. Consequently, much larger

tetraethylammonium ions should penetrate into the polymer matrix in

order to neucralize the negative charge on the electrode surface. It

may be that due to the larger size of the TEA cation compared co the

ClO4- anion, the polymer film is being forced to expand. Upon

reversing the scan towards zero volts, these bulky cations are *

- gradually extruded from the polymer matrix, but the voids left by che

accomodation of the larger cations may be returning to their

equilibrium size at a much slower rate. This leaves large holes that

ferrocene molecules can penetrate·rapidly; hence, enhanced currents are

observed. Holding the electrode at positive pocentials after negative‘

scanning shows decreasing redox currents, implying a collapse of thel

polymer. This is due to the fact that the polymer matrix is expanded

to the extent more than necessary to hold ClO4- c¤u¤¤e§ ions, therefore

the slow contraction process continues at positive potentials. During

the positive scanning, drastic changes of polymer behavior are not

observed as they are in the negative scanning. It may be that chef

equilibrium structure of the polymer consists of voids that could

easily accommodate ClO4_ ions.

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, l77

In the case of N-methyl-4-vinylpyridinium polymers, the collapsing

process appears to be more rapid than all other cases. This may be

attributed to more rapid expulsion of TEA cations due to positive

charge present in this polymer coating. Similar behavior observed in

KPF6 may be due to distortion of the polymer matrix because of the

movement of solvated K} ion in and out of the polymer matrix during the

potential scanning. 7

The poly-DVB coated electrodes show similar blocking behavior in

the aqueous media as well, which was even observed with ferrocene in

acetonitrile solution. Due to the hydrocarbon nature of poly-DVB

films, it is reasonable to expect that they be more contracted in the

aqueous media than in the non-aqueous media. Compared to a clean

electrode, the poly-DVB coated electrodes show blocking behavior

towards Fe2+, Fe(CN)64- and hydroquinone. Figure 32 shows comparison

of the behavior of poly-DVB coated electrode and a clean electrode

towards Fe2+ in 0.SM HZSO4. The clean electrode shows normal redox

behavior of Fe2+ ions, whereas the coated electrode shows tremendous p

hindrance of redox behavior of the same. In the XPS experiments of

these films, we have not observed any evidence for the presence of ·

either Cloa- ion or N(Me)¢+ ions. Therefore the polymer film appears

to be neutral in nature and hence the hindrance of redox activity of

Fe2+ ions is very unlikely to be due to electrostatic reasons.

Therefore, it appears that the greatly attenuated redox activity of

Fe2+ ions at the poly-DVB coated electrode is due to steric hindrance

of the contracted film to the flow of Fe2+ ions towards the electrode

surface. Similar explanation can be given to the attenuated redox

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178

scml

<A>

0

(B)

Figure 32: Cyclic voltammetric behavior of (a) a clean Pt

electrode, (b) a Pt electrode coaced in 100 mm DVB in 10mm

ferrous sulphace/0.5M sulphuric acid.

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179

behavior observed for hydroquinone and ferrocyanide ions.

In order to examine the redox trapping/adsorption properties of

poly-DVB films, four coated electrodes as well as four clean electrodes

were soaked (overnight) in ferrocene, Fe2+, Fe(CN)64- and KBr. The

coated electrodes which were soaked in ferrocene, Fe2+ and Fe(CN)64-

did not show the characteristic redox behavior of respective redox

species when the electrodes were examined in a clean electrolyte. But N

the coated KBr soaked electrode showed a marked difference in behavior

compared to the control electrode. In acetonitrile this electrode

showed characteristic Br- redox behavior (figure 3B). Gradual decay of

Br- wave was observed.

Due to the apparent electro-neutral nature of the polymer films, it

is difficult to believe that justBr,

is being adsorbed into the

polymer film. It is more likely that K+Br- partitions into the polymer

film as an ion pair. In later studies similar behavior was observed

with coated electrodes soaked in aqueous KI as well.

The coatings exhibit good stability. The coated electrodes retain

their characteristic behavior after use in acidic and neutral aqueous

solutions. Further attempts to recoat the electrodes in fresh DVB

electrolytes produce no significant deposition currents. Repeated

scanning in ·0.5 M HZSO4 between the oxidation and reduction waves of .

the Pt electrode gradually destroys the polymer.

XPS- experiments have shown that electropolymerization in 10 mm DVB

yields about 4 — 5 nm thick poly-DVB films.

N

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130

.vO

= E

Figure 33: Cyclic voltammetry of bromide ions trapped in poly-DVBcoated P1: electrode, in 0.lM TEAP.

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181l

4.IV.F 4—Viny1pyridine

4-Vinylpyridine, like DVB, forms a coating on a Pt electrode upon

scanning across its oxidation potential 1.3 V (vs SSCE) (Figure 34).

At higher concentrations (e.g. 100 mM) of 4—vinylpyridine, the

deposition current (igx) observed is much smaller than that observed at

lower concentrations (10 mM), and the coatings formed are thicker,

similar to DVB. As in the case of 100 mM DVB coated electrodes 4-l

vinylpyridine coated electrodes also show strong attenuation of

ferrocene redox chemistry. Electrodes coated in 10 mM solutions of 4-

vinylpyridine, yield assymmetric redox waves as observed for DVB coated

electrodes (10 mM concentration). Therefore, these poly-4-

vinylpyrldine films also appear to be neutral. XPS- depth profiling

experiments have not been carried out on these coatings. The

coatings also show strong blocking behavior towards Fe2+ in 0.5 M HZSOA

and Fe(CN)64— in pH = 7 buffer. In the case of Fe2+ the protonation of

4-vinylpyridine may preclude the diffusion of Fe2+ ions through the

polymer film. But in the case of Fe(CN)64- the inhibition of redox

chemistry may be mainly due to steric factors. In pH 7 buffer, the

hydroquinone is permeable through the coating (Figure 35). ·Protonation

of the N atom of pyridine moiety is excluded as the HZQ redox waves

have shapes corresponding to a diffusion controlled process rather than

surface bound species. At this point this behaviour is a mystery.

Similar to DVB coatings, these coatings derived from 4—viny1pyrid1ne

also adsorb Br- from KBr solution.

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162 _

C1

I5 pc

100 mm b4VPYO

+1 +2

Figure 34: Electrochemical cleposition of 100mm 4-vinylpyridine(a) scan 1, (b) scan 2 in 0.1M TEAP.

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' 183

C1

Figure 35: Cyclic voltammetry of poly—4—vinylpyridine coaued

electrode in lmm hydroquinone, (a) clean electrode (b) coaced

electrode in O.lM TEAP.

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184

4.IV.G Phenol_

Pham and DuBois (81) have shown oxidation of 0.1 M phenol in

· aqueous alkaline solutions form (SO - 200 um) films of polyphenylene

oxide. In acetonitrile, concentrations of phenol as low as 0.4 mM form

coatings during multiple potential scans through the oxidation wave.

The passivation of the electrode is not as rapid as that of DVB or 4-

vinylpyridine (Figure 36) probably because of the lower concentration

of phenol that was employed. The most notable feature of a phenol-

coated electrode is a prominent prewave for ferrocene, which is several

times stronger (Figure 37) than that observed for either DVB or 4-

vinylpyridine. The polymer deformation during the negative potential

scans may be larger than the previous two cases, trapping larger

amounts of ferrocene at deformed sites. Attenuation of the ferrocene

peak is never as strong as in the previous two cases, which may be due

to smaller thickness of the polymer layer.

4.IV.H N-methyl-4-vinylpyridinium salts

N-methyl—4-vinylpyridinium salts form polymer coatings upon

scanning across the first reduction potential -1.1 V (vs SSCE). During

this process, a gradual decrease of the reduction wave is evident.

' This negative shift may be due to the film resistance of the coated

electrode (Figure 38). A large reduction peak is evident after holding

the potential of the coated electrode at O V (vs SSCE). The peak

current (iged ) is much larger than that during the first potential

scan. Both the pyridinium salt and 4-vinylpyridine show a weak

oxidation wave near O V (vs SSCE). It may be that by holding the

1

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185 _

·

nb .. I \.I \

. I \\I ,I x1mm PHENOL II 1

-

_ I I

I I5 ¤’ IIJ I I

I [II 1I 1I / ‘

[ I

I /. I III,

C

1’

1[

‘{2/

·

JI

Q +1 . + 2

Figure 36: Electrochemical deposition of phenol Ca) scan 1(b) scan 15 (c) scan 30, electrolyte 0.1M TEAP.

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186 _

lli•

II•

X•

I5pc1 I R y{J ~I•

\ _'

II n •

„ ° b: : /I Ä] .[ V

I II. UI,

‘·O

G

Figure 37: Poly-phenol coated electrode in 2 mm ferroeene,(a) before negative scanning (solid line), (b) after negativescanning (dashed line).

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187

I 6 "

_

-~

/’

" " "/ 1

( 1 .{ 1G ¤ 1\\

x / G

2 1 b °_,,..J.-....-__-- --—··

a"6

N·M‘e, Z. V PY

C

Figure 38: Electrochemical deposition of N-methyl-A-viny1pyridi—

nium tetrafluoroborate, (a) scan 1 (b) scan l5 (c) scan 16 (after

holding at 0 volts), (cl) scan 17.

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_ 188 ·

potential at O V (vs SSCE), the film is being oxidized.

Alkylpyridiniums rapidly dimerize upon reduction; the dimer can be

reoxidized to the monomer near 0 V. Thus, we attribute the observed

behavior to dimerization occurring simultaneously with deposition.

Compared to the previous three polymer coatings, the coatings

derived from the pyridinium salt are known to be positively charged.

Upon soaking in a solution of K4Fe(CN)6, [pH · 7.0], the coated

electrodes exhibit a surface—bound electrochemical wave (Figure 39),

with AEP• 25 mV and ip proportional to scan rate (Figure 40).

Electrostaticl trapping of an anion confirms the positive charge

associated with the polymer coatings. Similar ferrocyanide trapping

has been reported by Oyama and Anson (104) for protonated

polyvinylpyridine—coated electrodes. There may be other anionic

species that can be trapped in a similar manner in the polymer matrix

with potential applications in electrocatalysis (104).

_ 4.IV.I Diffusion of Solute at Rotating Disk Electrode

Rotating disk voltammetry which has been extensively employed in

the electrochemical mechanistic studies, also can be used in the

investigations of diffusion of solute through thin films. The limiting

current observed for an oxidation/reduction process takes place at

rotating disk electrodes (RDE) is given by the equation (21,105):

1L - 0.62 ¤ F A cs 0;/3 J1/6 61/2 (40)

D • diffusion coefficient of solute

}

w = angular velocity of disk given by w-

2nN

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189

'

A.E=25mv

Figure 39: Cyelic volcametry of electroscatically bound ferro-

cyanide on poly—N- methyl-4-vinylpyridiuium tetrafluoroborate

coated electrode.

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190

T6

T4 ' l

T2

TOI

80

<Ü 40¤.U T

20

0

0 20 40 60 80 T00 200 »Scan Rate mv/sec

Figure 40: Scan rate of electrostatically bound ferrocyanide onpo1y-N·methy1—4—viny1pyridinium tetrafluoroborate coated electrode.

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l91°

N = rps

v '- kinematic viscosity, cmz/sec.

nThis equation is especially useful in the evaluations of diffusioncoefficients of redox species.

In the event the RDE is coated with a thin film, the solute has to

be passed through the membrane prior to the redox process at the

electrode surface. Therefore the limiting current (iL) depends on the

partition coefficient (P) of the solute into the membrane, and the

diffusion coefficient (DS’P°l) of the solute through the membrane

barrier. The limiting current is membrane permeable species is given

by inverse Levich relationship (106):

1 1 1

membrane thickness.

The two terms in the right hand side represent the diffusion rates

of solute through the membrane and Levich depletion layer in solution, ·

respectively. If the diffusion through the membrane is very rapid due

to very thin film (d very small) or very largeP.dS,P°1,

iglvs ml/2

is linear with zero intercept (ie Dä/3 v”l/6 ml/2 << Ifthe diffusion through the membrane is slower, iii vs mél/2 is linear

and P.DS’P°l/d can be evaluated from the intercept. In addition to

that the following features are observed in the inverse Levich plots.

(a) Its slope should yield the same DS as at a naked rotated disc

electrode independent of CS or d.

(b) The intercept should be inversely proportional to CS.

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192

_ (c) The intercept should be proportional to d.

The parameter P.DS,P°l/d, which can be evaluated for a redox

species, is useful to understand the properties such as the film

homogeneity or the absence of pin—holes or cracks in the polymer film.

In the event of the former situation, one should be able to observe

dramatic changes of the P.DS’P°l/d parameter as the molecular size of

the diffusing species is gradually increased. ·

With this objective in mind, we have investigated RDE behavior of

poly—DVB coated electrodes. Figure (41) shows inverse Levich plots of U

clean Pt electrode (curve a) and a (10 mM) poly-DVB coated electrode

(curves b, c, d). The curve a shows ideal RDE behavior in 2 mM

ferrocene. In fact the calculated value for DS (- 2.38 x 10·5 cmz/sec)

is comparable with the values reported in the literature (106).

ldeally, the slopes of the clean Pt electrode and the coated electrodes

should be identical (equation 22). As it is shown even the slopes of

the same coated electrodes do not agree with each other in three

different measurements when:e(i) randomly changing the rotation speed,

(ii) increasing the rotation speed gradually,

(iii) decreasing the rotation speed gradually,

Also they are different from the slope that is observed for the clean

electrode. Further, the reproducibility of limiting current of the

same coated electrode is extremely poor. The limiting current would

either increase or decrease, depending on the prior potential history

of the coated electrode.

This poor reproducibility and the random variation of the limiting

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I 193

/D

0

TaC ¢

‘; o

ZI ¤— B

0 Q Ü

G , __

G

5 .HHSU

ä1* -2 A "iau-•

-•-•-3¤

B.

-1/20

(rocaziou speed_lL)

Figure 41: Rotating disk voltammetric plots of (al clean Pt electrode

and a poly-DVB coated electrode, in (b) random, (c) gradually increasing

(d) gradually decreasing order , of the rotation speed.

l

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194 _

currents observed, believed to be due to the morphological changes in U

the nature of the polymer films, did not permit reliable evaluations of

P„DS,P°l/d Uparameters and in turn failed to yield any information on

size discriminating nature of permeating molecules and information on

the nature of film homogeneity. '

4.V Conclusionh

Four surface coatings have been synthesized by electrochemical

polymerization using the monomers divinylbenzene, phenol, 4-

vinylpyridine, and N-methyl—4—vinylpyridinium salts. The first three

coatings are neutral and the fourth is positively charged, as shown by

its ability to electrostatically trap anions. These coatings cause

considerable attenuation of redox chemistry of redox couples such as

Fe2+, Fe(CN)64—, hydroquinone, ferrocene, landl nitrobenzene. The

U anomalous pre-wave phenomena observed in these coatings may be due to

trapping of ferrocene in the deformed polymer matrix during potential

scanning. The observed film opening and closing phenomena may be due

to partitioning of bulky tetraethylammonium ions into the polymer

matrix during the negative potential scanning. Further, these

electrochemically formed films appear to be very homogeneous and free

of pinholes.

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UChapter S

CONCLUSION

Due to the presence of several different mechanisms which cause

attenuation of both bridging and terminal OH groups, it is difficult to

assess the reactivity of OH groups on the basis of peak attenuation.

The surface coverage calculation based on the Si—C absorbance data

indicates the presence of approximately monolayer coverage of silane on

a modified TiO2 surface. The photocurrent generation experiments of

modified TiO2 indicate that the hydrophobicity of the modified layer

plays an important role towards stability of the modified layer.

Further, it may be that the inhomogeneity of the modified layer due to

the presence of different attenuating mechanisms (OH groups) partly

contributes to the instability of the modified layer, during

photocurrentgeneration.The

electrochemical polymerization experiments have shown the

feasibility of synthesis of polymer coatings from divinylbenzene, 4-

vinylpyridine, phenol, and N—methyl 4-vinylpyridinium salts. All four

.coatings show good blocking characteristics towards electroactive

species. This further indicates superior homogeneity of the modified

layers synthesized in this manner, over similar layers synthesized by

covalent attachments.

Electrochemical as well as XPS- data indicate that the first three

T coatings are neutral whereas the fourth indicates its positively

charged nature by trapping ferrocyanide anions. Further, the DVB

195

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196

derived polymers have shown specific_adsorption characteristics towardsBr’,

which may have useful applications as ion—selective membrane.

Electrochemical polymerization is very likely to lead to the

synthesis of polymer films with very interesting properties such as ion

fselective membranes and modified surfaces suitable for specific

electro-catalysis. The modification by covalent bonding of non-

electroactive species of small band gap n—type semiconductors does not

seem to yield substantial improvements in photoelectrochemical devices.

This is mainly due to the difficulty in forming very homogeneous

modified surfaces by this approach, which is essential for the

stabilization of n—type small band—gap semiconductors. The

electrochemical polymerization seems to produce more homogeneous films

which are suitable for this purpose. But the homogeneity of these

films itself is not adequate for the success of, the

photoelectrochemical systems. They should be rugged enough to resist

and survive the reactive intermediates which are produced during this

process. Until such developments are made it is quite unlikely that

the photoelectrochemical systems will live up to the expectation as a

viable and reliable alternative source of energy.

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· 203

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APPENDIX 1

Y_ total sample on the surface (pmoles)

tota sur ace area m2

P ¤ surface concentration.

If the concentration of the sample is c and total volume of the disc is

v

{egal sample s e,v, mols lt-1 cm-3 if the weight of the pellet is u

(in grams) and the surface area of the powder is Ta" (in mz/g)

total surface area = m.a. (mz)

-1 3 ‘. C (mol lt ) V (cm )

· · V ' (V)a (m g ) u (g)

if the adsorbed sample obeys Beers’ Law

A • g . c . d . _ (2)

d-

thickness

Volume of the pellet

V = nrzd (3)

Substitute (2) and (3) into (1) ”

. P C . nrzd mol lt-1 cm3‘ • •

' ija w m

204

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205

, I mol lt_lCII13y5

W • 3 103 mz

¤ 103 pmol 111.2 .

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