coating organici per aumentare l’efficienza del...
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S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Coating organici per aumentarel’efficienza del silicio
A. Le Donne, M. Acciarri. M.Dilda and Simona BinettiMILANO-BICOCCA SOLAR ENERGY RESEARCH CENTER
Department of Material Science, University of Milano-Bicocca Italy
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
PV market: technology
• The most important material for solar cells has been and is still silicon.
• Today, approximately 95 % of cumulative installed PV modules are based on crystalline silicon technology.
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Beyond 2020 ?
Which will be the role of silicon in PV ?
Main drawback: the cost !
� availability �no toxicity � long lifetime� sustainability � Recycling process (www.pvcycle.org )�A worldwide global production
Advantages :
Silicon has no competitors !
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Reduce material costthickness from 180 to -80 µm
Silicon solar cell: analysis of the cost :
research activities
Increase cell efficiency
Si reduction consumption for Wpand use of lower cost silicon
High productivity
Wafering11%
Ingot growth8%
Feedstock14%Module
assembly40%
Cell manufactory27%
High efficiency modules and new assembly
concepts
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
High efficiency Si solar cells
• HIT structure : c-Si with a double a-Si/c-Si heterojunctionon n-type (Sanyo)
η= 23 % (R&D) η=20.7 % (in production)
•Based on n type Silicon : commercial η=22% (Sunpower)
•Pluto: based on PERL cells (by UNSW) World record of efficiency: 25.5 % Commercial efficiency: η=19.9 % (Suntech)
Theoretical maximum efficiency: 31 %
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
2010 53 $/kg
1. Silicon cost 2. Silicon availability
3. Environmental factors:– Lower energy payback time– Lower carbon footprint
Metallurgical silicon or Up grade metallurgical sil icon (UMG-Si*):advantages
*UMG-Si: is metallurgical-grade silicon chemically refined to 6NCompanies all have their own proprietary processes
2008: 250 $/kg2008: 250 $/kg
Photon energy may 2010
-A new shortage of silicon has been predicted
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Silicon solar cells
Light harvestingLight harvesting
ARC
Rear contact
Front contact
Si substrate
BSF
Emitter
etching junction ARC contacts
Device optimization
Decrease of the raw material price and
increase of the process yield
Target: 1 €/Wp
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Strategies for enhancing the energy conversion feat ures of first generation solar cell: light harvesting
theoretical solar cell efficiency around 38.6%*
An increase of the quantum efficiency of first generation solar cells could be obtained exploiting the solar spectrum regions not efficiently converted from silicon (i.e. conversion of photons withenergy E < Egap and E >> Egap) in
radiation around the maximum quantum efficiency value of the PV
device
*B.S. Richards, Solar Energy Materials & Solar Cells 90 (2006) 1189–1207
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Exploitation of high energy region of the solar spectrum*: E>>E gap
� down-conversion (DC) : process bywhich two low-energy photons are generated from absorption of one high-energy photon
� down-shifting (DS) : process by which a single high-energy photon is converted into a single lower-energy photon.
* C. Strumpel et al., Solar Energy Materials & Solar Cells 91 (2007) 238
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
• down-shifting (DS): process by which a single high-energy photon is converted into a single lower-energy photon.
C. Strumpel et al. , Solar Energy Materials & Solar Cells 91 (2007) 238
Exploitation of high energy region of the solar spectrum: hνννν>>Egap
(L)DS are molecular systems with �a wide absorption band in the region where the EQE of the cells is low �No absorption in other region �narrow emission band coinciding with the peak of the EQE cells�high stoke shift�high thermal and photo stability
E. Klampaftis et al. Solar Energy Materials & Solar Cells 93 (2009) 1182
Matrix:�high transmittance �Low scattering�High “solubility” of LDs�Photo e thermal stability
Organic dyes Rare-earth ions/complexesQuantum dots
PMMA , Al 2O3 , SiO2
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
K. R. McIntosh et al. Prog. Photovolt: Res. Appl. (2008)
DS: Fluorescent organic dyes
ηηηη=+ 1 %
The encapsulation includes a layer of luminescent down-shifting
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Aims of our work
1. Identification of new DS
complexes to increase of the PV
conversion efficiency of Si-based
solar cells exploiting the solar
spectrum region below 450 nm
2. Development of a procedure compatible with the industrial process for the PV module fabbrication.
300 400 500 600 700 800 900 1000 1100 12000.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
AM 1.5G
encapsulated solar cell
wavelength (nm)
Su
nli
gh
t in
ten
sity
(W
/m2/n
m)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Sp
ectra
l Re
spo
nse
(A/W
)
down-shifting
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
600 7000,0
2,0x105
4,0x105
6,0x105
8,0x105
1,0x106
1,2x106
Pho
tolu
min
esce
nce
Wavelength (nm)
Eu3+
Eu complexes
� Whatever the sensitizer may be, the emission profile of a Eu3+ complex consists of a main line at 612 nm related to the 5D0-
7F2 transition in the Ln3+ ion
1 . DSs: Organolanthanide complexes
design of efficient organolanthanide DSs suitable for different solar cell applications (namely terrestrial or space ones) by a proper choice of the organic antenna
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Energy transfer in Ln(III) complexes
The 4f-4f transitions are forbidden by the La Porte rule, their luminescence intensity can be strongly increased by incorporating the Ln3+ ions into a complex able to participate in energy transfer process (usually Dexter type transfer).
ANTENNA EFFECT:1. light absorption by the ligand2. highly efficient intraenergy conversion
from the ligand singlet (S1) states to the triplet (T1) states by intersystem crossing
3. energy transfer from ligand T1 states to the excited state of the Ln3+ ions.
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
1. DS choice: Eu 3+ organic complexes
3[(trifluoromethylhydroxymethilene)-
d-camphorate]europium(III)
tri(dibenzoylmethane)
(monophenanthroline)europium(III)
560 580 600 620 640 660 680
0.0
2.0x105
4.0x105
6.0x105
8.0x105
1.0x106
1.2x106
1.4x106
Ph
oto
lum
ines
cen
ce
Wavelength (nm)
Eu3+
(5D
0-
7F
2)
300 400 500 600 700 800 900 1000 1100 1200
0.0
0.2
0.4
0.6
0.8
O
CF3
O
CH3
CH3CH3
Eu
3
wavelength (nm)
AB
S Eu(tfc)3
300 400 500 600 700 800 900 1000 1100 1200
0.0
0.5
1.0
1.5
2.0
O
O
3
N
N
Eu
wavelength (nm)
AB
S Eu(dbm)3phen
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Determination of the best concentrations
250 300 350 400 450 500 550 600
0.0
0.2
0.4
0.6
0.8
1.0
No
rmal
ized
in
ten
sity
Wavenumber (nm)
PLE Eu(tfc)3
ABS Eu(tfc)3
Eu(tfc)3 0.003% wt
Good match between PLE and absorption spectra ⇒⇒⇒⇒ good energytransfer
250 300 350 400 450 500 550 6000.0
0.4
0.8
PLE Eu(tfc)3
ABS Eu(tfc)3
No
rmal
ized
in
ten
sity
Wavelength(nm)
Eu(tfc)3 2% wt
260 280 300 320 340 360 380 400 420 440 460 480 500 520 540 560Eu
rel
ated
em
issi
on
PL
E (
no
rmal
ized
in
ten
sity
)
Wavelength (nm)
0.003%
0.006%
0.019%
0.009%
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Aims of our work
1. Identification of new DS
complexes to increase of the PV
conversion efficiency of Si-based
solar cells exploiting the solar
spectrum region below 450 nm
2. Development of a procedure compatible with the industrial process for the PV module fabbrication.
300 400 500 600 700 800 900 1000 1100 12000.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
AM 1.5G
encapsulated solar cell
wavelength (nm)
Su
nli
gh
t in
ten
sity
(W
/m2/n
m)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Sp
ectra
l Re
spo
nse
(A/W
)
down-shifting
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Encapsulating matrixdoped with DSs
2. Development of a procedure compatible with the industrial process for the PV module fabbrication
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Eu(dbm)3phen single layer (0.0015% wt)
1001240
)(
)(
)()(
⋅⋅=
=
λλ
λλ
λ
SREQE
P
ISR ph
300 400 500 600 700 800 900 1000
20
40
60
80
100
cell+PVA cell+PVA&dbm
EQ
EWavelength (nm)
300 350 40010
20
30
40
50
60 cell+PVA cell+PVA&dbm
EQ
E
Film di PVA +Eu(dbm)3phen
Solar Cell
I/V @ 1 sun : • ISC = 0.2 %
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Single layer of PVA + Eu(tfc)3 (0.003% wt)
400 600 800 1000
20
40
60
80
100
cella+PVA cella+PVA&tfc
EQ
E
Wavelenght (nm)
• Aumento EQE tra 260 e 360 nm
300 350
20
40
60 cella+PVA cella+PVA&tfc
EQ
E
Wavelenght (nm)
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Eu(tfc)3 Eu(dbm)3phen
Absorption band
UV VISIBLE
1
2
Film di PVA +Eu(dbm)3phen
Solar Cell
Film di PVA +Eu(dbm)3phen
Solar Cell
Film di PVA +Eu(tfc)3
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Double layer structure: Poly-VinylAcetate doped withEu(dbm) 3phen (0.0015% wt) + Poly-VinylAcetate doped with
Eu(tfc) 3 (0.003% wt)*
�EQE enhancement between 260 and 420 nm (≡ DSs absorption region)
�strong enhancement of the cell performances (Isc +1.4%, Pmax +2.8%) with respect to the undoped PVA double coating
250 300 350 400 450 5000.2
0.4
0.6
0.8
Ex
tern
al Q
uan
tum
Eff
icie
ncy
wavelength (nm)
cell coated with
undoped PVA
cell with doped PVA
coatings (Eu(dbm)3phen
and Eu(tfc)3)
c-Si solar cell
PVA& Eu(tfc)3
PVA & Eu(dbm)3phen
A.Le Donne, M. Acciarri, S.Marchionna & S.Binetti Prog.Photovolt: Res.Appl. 17 (2009) 51
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
2. Integration of the encapsulating matrix doping p rocedure in the module fabrication process
⇒ new complexes able to exploitation of a wide portion of the solar spectrum without using multilayer structures.
•EVA (EthyleneVinylAcetate) instead of PVA:
Problems: - best results with two layers- No mixed layer in order to prevent luminescence quenching effects due to possible interactions among different complexes
�Previously reported results confirmed also with EVA
Strategy to be followed : •Mixing of Eu3+ complex powders with EVA (EthyleneVinylAcetate) melt•extrusion of doped EVA sheets•realization of PV modules using doped EVA sheets
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Eu3+ complex absorption broadening through the presence of a co-ligand
260 280 300 320 340 360 380 400 420 440 460 480 500
Eu(tfc)3-EABP (1:1 mol)
solution in CH2Cl
2
EABP in CH2Cl
2
wavelength (nm)
No
rmal
ized
ab
sorb
ance
Eu(tfc)3in CH
2Cl
2
� EABP and Eu(tfc)3 form a complex by interaction of the electron rich carbonyl group with the positively charged Eu3+ ion �new absorption band in the visible region, probably related to a bathochromic shift of the first singlet–singlet transition of EABP occurring upon complexation.
O
CF3
O
CH3
CH3CH3
Eu
3
NCH2CH3
CH2CH3
O
NCH2CH3
CH2CH3
4,4'-bis(diethylamino)benzophenone
(or EABP)
tris[3-(trifluoromethylhydroxymethilene)-d-camphorate]
europium(III) (or Eu(tfc)3)
….
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Eu3+ complex PLE broadening through the presence of a co -ligand
260 280 300 320 340 360 380 400 420 440 460 480 500
0.0
0.2
0.4
0.6
0.8
1.0Eu(tfc)
3-EABP (1:1 mol)
solution in CH2Cl
2
wavelength (nm)
No
rmal
ized
ab
sorb
ance
The visible light absorbed due to the presence of the new absorption band is transferred to the Eu3+ ion ⇒ doping of PV module encapsulating matrix with such DS should allow the exploitation of a wide portion of the solar spectrum without using multilayer structures.
260 280 300 320 340 360 380 400 420 440 460 480 500
Eu(tfc)3 in CH
2Cl
2
Eu(tfc)3-EABP (1:1 mol)
solution in CH2Cl
2
wavelength (nm)
PL
E o
f th
e E
u3+
rel
ated
em
issi
on
@ 6
12 n
m
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
EQE and I-V on home made test modules
300 320 340 360 380 400 420 440 460
0.2
0.4
0.6
encapsulation with Eu(tfc)3-EABP doped EVA
encapsulation with undoped EVA
Ex
tern
al Q
uan
tum
Eff
icie
ncy
wavelength (nm)
� Isc : + 2.2%� Pmax: +2.9%
c-Si solar cell
glass sheet coatedwith undopedor doped EVA
A. Le Donne, M.Acciarri, M.Dilda & S.Binetti, Optical Materials 2010 in press
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Cost evaluation
�Complex cost/mg: obtained from the commercial price
�Doped encapsulating layer cost/module: obtained from the
complex cost/mg
�Wp price of 4.12 €/Wp*, standard module efficiency of 13% and
module area of 36 x (15.56x15.56 cm2)
���� REDUCTION OF THE WP PRICE FROM 4.12 TO 4.03 €/WP!
* http://www.solarbuzz.com/moduleprices.htm
+0,6 % is sufficient to maintain unaffected the Wp price
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Conclusions
� Identification of a single down-shifter (Eu(tfc) 3-EABP )which allows the exploitation of a wide portion of the solar spectrum
�realization of home made PV modules showingsignificant enhancement of their performances (total delivered power + 2.9% )
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Future works
� Realization of real PV modules usingEu(tfc)3-EABP doped EVA as encapsulatingmatrix
� environmental tests on such modules.
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
Acknowledge
Project MISE- ICE-CRUI 2009 n° 90 Co-financed by X-GROUP SpA
S.Binetti
Il Futuro del silicio nel fotovoltaicoTrento 28 ottobre 2010
MIB-SOLARMILANO BICOCCA SOLAR ENERGY RESEARCH CENTER
MIB-SOLARMILANO BICOCCA SOLAR ENERGY RESEARCH CENTER
Consiglio Scientifico•Alessandro Borghesi•Gianfranco Pacchioni•Simona Binetti•Alessandro Abbotto•Maurizio Acciarri•Marco Fanciulli
�Sintesi di celle organiche�Caratterizzazione silicon based solar cells �Fabbricazione Celle di CIGS
�Realizzazione mini moduli�Sputtering x TCO�Laser scribing
�Caratterizzazione celle e moduli:�Simulatore solare ( 6x 6 inch)�EQE (300- 1800 nm)�Light soaking
Grazie per l’attenzione !