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CMOS Mixed Signal Design CMOS Mixed Signal Design Part I: OpAmp Design Dinesh Sharma Microelectronics Group, EE Department IIT Bombay, Mumbai September 19, 2010

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CMOS Mixed Signal Design

CMOS Mixed Signal DesignPart I: OpAmp Design

Dinesh Sharma

Microelectronics Group, EE DepartmentIIT Bombay, Mumbai

September 19, 2010

CMOS Mixed Signal Design

Introduction

Linear Mode

Linear Mode of Operation

V

V

V V

OH

OL

iL iH

Inverter Transfer Curve

Analog circuits require theoutput voltage to be sensitiveto the input voltage.

Digital logic requires theoutput to be insensitive to theexact input voltage.

Circuits need to be biased for operation in the linear regime.

CMOS Mixed Signal Design

Introduction

Linear Mode

Linear Mode of Operation

V

V

V V

OH

OL

iL iH

Inverter Transfer Curve

Analog circuits require theoutput voltage to be sensitiveto the input voltage.

Digital logic requires theoutput to be insensitive to theexact input voltage.

Circuits need to be biased for operation in the linear regime.

CMOS Mixed Signal Design

Introduction

Linear Mode

Linear Mode of Operation

V

V

V V

OH

OL

iL iH

Inverter Transfer Curve

Analog circuits require theoutput voltage to be sensitiveto the input voltage.

Digital logic requires theoutput to be insensitive to theexact input voltage.

Circuits need to be biased for operation in the linear regime.

CMOS Mixed Signal Design

Introduction

Linear Mode

Linear Mode of Operation

V

V

V V

OH

OL

iL iH

Inverter Transfer Curve

Analog circuits require theoutput voltage to be sensitiveto the input voltage.

Digital logic requires theoutput to be insensitive to theexact input voltage.

Circuits need to be biased for operation in the linear regime.

CMOS Mixed Signal Design

Single Transistor Amplifier

A Single Transistor Amplifier

v

vo

Vd

Id

i Vg

dId =∂Id∂Vg

dVg +∂Id∂Vd

dVd

∂Id∂Vg

= gm (Transconductance)

∂Id∂Vd

= go (O/P conductance)

The current source load keeps the drain current constant. So

dId = 0 = gmvi + govo

Hence, the voltage gain (Ao) is

Ao =vo

vi= −

gm

go= −gmro

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Transistor Characteristics

gm and go depend on the transistor characteristics.In saturation,

Id ≃K2

(Vgs − VT )2

where, K is the conductivity factor given by:

K = K ′

(

WL

)

≡ µCox

(

WL

)

VT is the threshold voltageW and L are transistor width and length respectively.µ is the mobilityand Coxis the gate oxide capacitance per unit area.

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Transconductance

Let VGT ≡ (Vgs − VT )

Then Id =KV 2

GT

2and VGT =

2IdK

gm =∂Id∂Vg

= KVGT = K ′

(

WL

)

VGT

Also gm = KVGT = K

2IdK

=√

2KId =

2K ′

(

WL

)

Id

Similarly, K =2Id

VGT2 ; Therefore gm =

2IdVGT

2 VGT =2IdVGT

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Which formula?

gm = K ′

(

WL

)

VGT

gm =

2K ′

(

WL

)

Id

gm =2IdVGT

To increase gm

should we increase VGT ?or decrease it?Is gm linearly dependent ontransistor size?dependent on its square root?or is it independent of transistorsize?

In fact, which formula should be applied depends on how thetransistor is biased and sized. If size and VGT are known, thefirst formula applies. If the drain current and size are known, thesecond one does. If gate voltage and drain current are givenand the transistor is accordingly sized, the third formula shouldbe used.

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Which formula?

gm = K ′

(

WL

)

VGT

gm =

2K ′

(

WL

)

Id

gm =2IdVGT

To increase gm

should we increase VGT ?or decrease it?Is gm linearly dependent ontransistor size?dependent on its square root?or is it independent of transistorsize?

In fact, which formula should be applied depends on how thetransistor is biased and sized. If size and VGT are known, thefirst formula applies. If the drain current and size are known, thesecond one does. If gate voltage and drain current are givenand the transistor is accordingly sized, the third formula shouldbe used.

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Which formula?

gm = K ′

(

WL

)

VGT

gm =

2K ′

(

WL

)

Id

gm =2IdVGT

To increase gm

should we increase VGT ?or decrease it?Is gm linearly dependent ontransistor size?dependent on its square root?or is it independent of transistorsize?

In fact, which formula should be applied depends on how thetransistor is biased and sized. If size and VGT are known, thefirst formula applies. If the drain current and size are known, thesecond one does. If gate voltage and drain current are givenand the transistor is accordingly sized, the third formula shouldbe used.

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Which formula?

gm = K ′

(

WL

)

VGT

gm =

2K ′

(

WL

)

Id

gm =2IdVGT

To increase gm

should we increase VGT ?or decrease it?Is gm linearly dependent ontransistor size?dependent on its square root?or is it independent of transistorsize?

In fact, which formula should be applied depends on how thetransistor is biased and sized. If size and VGT are known, thefirst formula applies. If the drain current and size are known, thesecond one does. If gate voltage and drain current are givenand the transistor is accordingly sized, the third formula shouldbe used.

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Which formula?

gm = K ′

(

WL

)

VGT

gm =

2K ′

(

WL

)

Id

gm =2IdVGT

To increase gm

should we increase VGT ?or decrease it?Is gm linearly dependent ontransistor size?dependent on its square root?or is it independent of transistorsize?

In fact, which formula should be applied depends on how thetransistor is biased and sized. If size and VGT are known, thefirst formula applies. If the drain current and size are known, thesecond one does. If gate voltage and drain current are givenand the transistor is accordingly sized, the third formula shouldbe used.

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Which formula?

gm = K ′

(

WL

)

VGT

gm =

2K ′

(

WL

)

Id

gm =2IdVGT

To increase gm

should we increase VGT ?or decrease it?Is gm linearly dependent ontransistor size?dependent on its square root?or is it independent of transistorsize?

In fact, which formula should be applied depends on how thetransistor is biased and sized. If size and VGT are known, thefirst formula applies. If the drain current and size are known, thesecond one does. If gate voltage and drain current are givenand the transistor is accordingly sized, the third formula shouldbe used.

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Which formula?

gm = K ′

(

WL

)

VGT

gm =

2K ′

(

WL

)

Id

gm =2IdVGT

To increase gm

should we increase VGT ?or decrease it?Is gm linearly dependent ontransistor size?dependent on its square root?or is it independent of transistorsize?

In fact, which formula should be applied depends on how thetransistor is biased and sized. If size and VGT are known, thefirst formula applies. If the drain current and size are known, thesecond one does. If gate voltage and drain current are givenand the transistor is accordingly sized, the third formula shouldbe used.

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Which formula?

gm = K ′

(

WL

)

VGT

gm =

2K ′

(

WL

)

Id

gm =2IdVGT

To increase gm

should we increase VGT ?or decrease it?Is gm linearly dependent ontransistor size?dependent on its square root?or is it independent of transistorsize?

In fact, which formula should be applied depends on how thetransistor is biased and sized. If size and VGT are known, thefirst formula applies. If the drain current and size are known, thesecond one does. If gate voltage and drain current are givenand the transistor is accordingly sized, the third formula shouldbe used.

CMOS Mixed Signal Design

Single Transistor Amplifier

Transistor Characteristics

Output conductance

Assuming a simple Early effect like model, we can write for go:

go ≃ λ′Id/L

where L is the channel length and λ is a technology dependentparameter. In terms of geometry and VGT , we can write:

go =λ′K ′

2WL2 V 2

GT

The Early Voltage VA is L/λ′. So,

go ≃ Id/VA =K ′W2λ′

(

VGT

VA

)2

CMOS Mixed Signal Design

Single Transistor Amplifier

DC Voltage Gain

Voltage Gain

The voltage gain in terms of geometry and VGT :

Ao =2L

λ′VGT

In terms of drain current and geometry:

Ao =1λ′

2K ′WLId

Thus, if the transistor is biased at constant current, the DC gainis determined by the square root of the gate area.

CMOS Mixed Signal Design

Single Transistor Amplifier

AC Behaviour

AC Behaviour

G

S

D

S

vi

vo

Cg

Cgd

gm vi ro Co

sCgd (vi − vo) − gmvi −vo

ro− sCovo = 0

vi(

sCgd − gm)

− vo

(

sCgd +1ro

+ sCo

)

= 0

So the AC gain A1 =vo

vi= −gmro

1 − sCgd/gm

1 + sro(cgd + co)

CMOS Mixed Signal Design

Single Transistor Amplifier

AC Behaviour

Bandwidth

A1 = −gmro1 − sCgd/gm

1 + sro(cgd + co)

Let Ctot ≡ Cgd + Co

Then, A1 = Ao1 − sCgd/gm

1 + sroCtot

Normally, ωCgd/gm << 1

Therefore, A1 ≃Ao

1 + sroCtot

This describes the frequency response of a system with onedominant pole. The bandwidth is given by 1/roCtot .

CMOS Mixed Signal Design

Single Transistor Amplifier

AC Behaviour

Gain Bandwidth Product

BW GBW

Gai

n (d

b)

oA

oA - 3db

0 db

Frequency

GBW = gmro ·1

roCtot=

gm

Ctot

The gain bandwidth product (or the cutoff frequency) isindependent of ro.

CMOS Mixed Signal Design

Single Transistor Amplifier

AC Behaviour

Maximum GBW

GBW is max. when there is no load connected and the load isentirely due to the device capacitance itself. Then the loadcapacitance is proportional to the device width.

Ctot = χW where χ is a technological parameter.

GBWmax =gm

χW

GBWmax =K ′VGT

χL

=1χ

2K ′IdWL

=2Id

χWVGT

CMOS Mixed Signal Design

Single Transistor Amplifier

AC Behaviour

Summary

Free Design Variables:Parameters W , L, VGT W , L, Id L, VGT , Id

gm K ′WL VGT

2K ′ WL Id

2IdVGT

goλ′K ′WV 2

GT2L2

λ′IdL

λ′IdL

Ao2L

λ′VGT

1λ′

2K ′WLId

2Lλ′VGT

GBW K ′WVGTLCtot

2K ′WIdL

1Ctot

2IdVGT Ctot

GBW maxK ′VGT

χL1χ

2K ′IdWL

K ′VGTχL

CMOS Mixed Signal Design

Single Transistor Amplifier

AC Behaviour

Technological Constraint

Ao · GBWmax =2L

λ′VGT·

K ′VGT

χL=

1λ′

2K ′WLId

·1χ

2K ′IdWL

So Ao · GBWmax =2K ′

λ′χ

Therefore, this quantity is a technological constant and thedesigner has no control over it.What if an application requires a Gain-GBW product higherthan this value?

CMOS Mixed Signal Design

Cascode Amplifier

Cascode Amplifier

Id

V

Vd1

d2

M1

M2

V

V

v

v

g1

g2

in

outV

ref

dId = gmeqdVg1 + goeqdVd2

So gmeq =∂Id

∂Vg1with dVd2 = 0

and goeq =∂Id

∂Vd2with dVg1 = 0

To calculate gmeq, we put a voltage source atthe output node and calculate ∂Id

∂Vg1.

goeq is calculated by putting a voltage source atvg1 and calculating ∂Id

∂Vd2.

CMOS Mixed Signal Design

Cascode Amplifier

Cascode eq. gm

Equivalent gm of Cascode

Id

V

Vd1

d2

M1

M2

V

V

v

v

g1

g2

in

outV

ref

gmeq =∂Id

∂Vg1with dVd2 = 0

dVds2 = −dVd1 , dVgs2 = −dVd1

id = gm1vg1 + go1vd1

id = −gm2vd1 − go2vd1

So vd1 = −id

gm2 + go2

id = gm1vg1 − idgo1

gm2 + go2

gmeq =id

vg1= gm1

gm2 + go2

go1 + go2 + gm2≃ gm1

CMOS Mixed Signal Design

Cascode Amplifier

Cascode eq. go

Equivalent go of Cascode

goeq =∂Id

∂Vd2with dVg1 = 0

dVgs1 = 0, dVgs2 = −dVd1, dVds2 = dVd2 − dVd1

Id

V

Vd1

d2

M1

M2

V

V

v

v

g1

g2

in

outV

ref

id = 0 + go1vd1, sovd1 =id

go1

id = −gm2vd1 + go2(vd2 − vd1)

id = −idgm2 + go2

go1+ go2vd2

goeq =id

vd2=

go1go2

go1 + go2 + gm2

goeq ≃ go1go2

gm2

CMOS Mixed Signal Design

Cascode Amplifier

DC gain of Cascode

DC gain of Cascode

Ao = −gmeq

goeq= −

gm1(gm2 + go2)

g01 + g02 + gm2·

g01 + g02 + gm2

g01g02

So Ao = −gm1(gm2 + go2)

g01g02= −

gm1

g01·

(

1 +gm2

g02

)

Let A01 ≡ −gm1

g01common source gain

And A02 ≡ 1 +gm2

g02common gate gain

Then, Ao = −A01 · A02

DC gain = the product of the DC gain of the two transistors.

CMOS Mixed Signal Design

Cascode Amplifier

AC Behaviour of Cascode

AC Behaviour of Cascode

Id

V

Vd1

d2

M1

M2

V

V

v

v

g1

g2

in

outV

refG

S

vi

vo

CoCg1

Cdg1

gm1 viro1

vx

ro2

gm2 vx

We shall see presently that vx is quite small.

Initially, we shall ignore the effect of the drain capacitance ofthe lower transistor and the gate capacitance of the upper one.If necessary, we can always replace ro1 by ro1‖Cds1‖Cg2.

CMOS Mixed Signal Design

Cascode Amplifier

AC Behaviour of Cascode

G

S

vi

vo

CoCg1

Cdg1

gm1 viro1

vx

ro2

gm2 vx

gm2vx +vx − vo

ro2= sCovo

vx =1 + sro2Co

1 + gm2ro2vo =

1 + sro2Co

A2vo

Since A2 is quite large, vx is very small compared to vo.

CMOS Mixed Signal Design

Cascode Amplifier

AC Behaviour of Cascode

G

S

vi

vo

CoCg1

Cdg1

gm1 viro1

vx

ro2

gm2 vx

sCdg1(vi − vx ) = gm1vx +vx

ro1+ sCovo

vo

vi= −

(A1 − sro1Cdg)A2

(1 + sro2Co)(1 + sro1Cdg) + A2sCoro1

If sro1Cdg is small,

Voltage gain =vo

vi= −

A1A2

1 + sro1Co(A2 + ro2/ro1)

This shows that the DC gain is multiplied by A2 and thebandwidth is reduced by roughly the same factor.

CMOS Mixed Signal Design

Cascode Amplifier

AC Behaviour of Cascode

Example Cascode Design

We want to design a cascode amplifier with the followingspecifications:

DC gain = 2500

Gain-Bandwidth product = 100MHz.

Load capacitance = 1 pF

Id

V

Vd1

d2

M1

M2

V

V

v

v

g1

g2

in

outV

ref

The two transistors in cascodeconfiguration have identical geometriesand the load is an ideal current source.Assume the following technologicalparameters:K ′

n = 150µA/V 2, VTn = 0.5V , VE = 20VAssume the supply voltage to be 3.3V.

CMOS Mixed Signal Design

Cascode Amplifier

AC Behaviour of Cascode

Calculation of gm

The gain bandwidth product is given by gmC . So,

2π × 108 =gm

C=

gm1

10−12

So gm1 = 628.3µS

Since the same current flows through the two transistors andthey have the same geometry, gm1 = gm2, go1 = go2.

Let A =gm1

go1=

gm2

go2

Therefore,

2500 =gm1

go1·

(

1 +gm2

go2

)

= A(A + 1)

This gives A ≃ 49.5.

CMOS Mixed Signal Design

Cascode Amplifier

AC Behaviour of Cascode

Calculation of bias current and geometry

49.5 =628.3 × 10−6

go1so go1 = 12.7µS

Therefore go1 = 12.7 × 10−6 =IdVE

=Id20

From where, the drain current is 254µA.

Since gm1 =

2K ′WL

Id ,WL

=628.32 × 10−12

300 × 10−6 × 254 × 10−6 ≃ 5.2

Therefore gm = 628.3µS,WL

= 5.2, Id = 254µA

CMOS Mixed Signal Design

Cascode Amplifier

AC Behaviour of Cascode

Bias Voltages

Id =12

K ′WL

V 2GT So VGT =

2 × 254150 × 5.2

= .81V

Id

V

Vd1

d2

M1

M2

V

V

v

v

g1

g2

in

outV

ref

Vg1 ≥ VTn + VGT = 0.5 + 0.81 = 1.31VM1 will be in saturation whenVd1 = VS2 ≥ 0.81V ,So Vg2 ≥ 0.81 + 0.5 + 0.81 = 2.12V .For M2to be in saturation,Vd2 ≥ 2.12 − 0.5 = 1.62V .

Thus the maximum output swing is from 1.62V to Vdd .

CMOS Mixed Signal Design

Cascode Amplifier

AC Behaviour of Cascode

DC level incompatibility

The output DC level of a cascode amplifier is higher than theinput DC level. This causes problems with direct connection tothe next stage, or with DC feed back to itself.

These problems can be reduced if we usea complementary arrangement of n and pchannel transistors for cascoding.

The upper transistor of the cascodearrangement can be thought of as asource follower to its bias voltage, whichkeeps the drain voltage of the loweramplifier transistor (nearly) constant.

Can we use a p channel transistor as asource follower?

Vout

Vbiasn

Vin

LoadVdd

Gnd

CMOS Mixed Signal Design

Cascode Amplifier

AC Behaviour of Cascode

Alternative Cascode

The p source follower will keep the drainvoltage of the amplifier at ≃ Vbiasp + |VTp|,allowing the cascode action as before.

Unfortunately, the circuit won’t work asthere is no path between Vdd and ground!

We can rectify this problem by providing acurrent source p load to the amplifiertransistor M1.

Vbiasp

LoadGnd

Vdd

Vout

M1M2

CMOS Mixed Signal Design

Cascode Amplifier

Folded Cascode

Folded Cascode

M1

M2

M3

Vin

Vbiasp1Vdd

GndLoad

Vbiasp2

Vout

This arrangement is called a folded cascode.M3 provides the bias current.M2 and M3 keep the drain voltage of M1 nearlyfixedId3 - Id1 flows through the p channelcascoding transistor M2, which providesamplification in a common gate configuration.

rout = (1 + gm2ro2)(ro1||ro3) + ro2

This is lower than the output resistance of the telescopiccascode stage, because of the paralleling of ro1 and ro3.

However, it is much higher than the single transistor outputresistance.

CMOS Mixed Signal Design

Current Mirrors

Current Source Loads

Up to now we have assumed current source loads. How do weimplement these?

A transistor in saturation has a (nearly) constant draincurrent.

Therefore single transistors (preferably with long channels)can be used as current sources/sinks.

These act as current sources/sinks only over some voltagerange — not for all voltages.

There is a weak dependence on voltage due to nonzerooutput conductance.

This dependence can be reduced by using a cascodestage.

CMOS Mixed Signal Design

Current Mirrors

A simple Current Mirror

M1 M2

Iref Io

Vref

For M1, Vds = Vgs > Vgs − VT

Therefore M1 is saturated.

Iref =K2

(Vref − VT )2

Therefore Vref = VT +

2Iref

K

If M2 is also saturated, Io = Iref

Thus M2 can act as a current source load

if Vo > Vref − VT i.e. Vo >

2Iref

K

CMOS Mixed Signal Design

Current Mirrors

Load for a Cascode stage

Vbiasp1

Vbiasp2

Vbiasn

Vin

Vout

Vdd

Gnd

The output resistance of the load appears inparallel with that of the amplifying stage.If we use a single transistor current load for acascode, the output resistance of the load willbe ≈ ro while that of the cascode stage will be≈ A × ro.The effective output resistance will thus bedominated by the much lower resistance of theload and we shall lose the advantages of thecascode stage.It is important, therefore, that the load alsoshould be a current source made from acascode pair.

CMOS Mixed Signal Design

Current Mirrors

A cascode current mirrorIref Io

VrefM1 M2

M3Vb

Vx Vy

A single transistor current mirror will havesome dependence on the drain voltagedue to its output resistance.This dependence can be reducedsubstantially by using a cascode stage.However, this reduces the availablevoltage range over which the transistorsare saturated.

For saturation of M2 Vy ≥ Vref − VT =

2Iref

K

Therefore Vb ≥ 2

2Iref

K+ VT

For saturation of M3 Vo ≥ 2

2Iref

K

CMOS Mixed Signal Design

Current Mirrors

Self biased Cascode current mirror

Iref

VrefM1 M2

M3

Vb

Vx Vy

Io

M0

This circuit does not need an externalvoltage bias.

The reference side of the mirror generatesthe bias voltages for both the transistors ofthe cascode output side.

However, this reduces the voltage rangeover which the the output may swing.

Vb = 2

2Iref

K+ 2VT

For saturation of M3 Vo ≥ 2

2Iref

K+ VT

The output voltage needs to be a VT higher than the minimum.

CMOS Mixed Signal Design

Current Mirrors

Folded Cascode with load

M1

M2

M3

Vin

Gnd

Vbiasp1

Vbiasp2

Vout

Vbiasn2

Vbiasn1

Vdd

The load for the folded cascode should also bea cascode pair.Here two n channel transistors in cascodeconfiguration are used as the load.

One major advantage of the folded cascode is that the outputcan be directly coupled to the input for negative feedback.

CMOS Mixed Signal Design

Current Mirrors

Folded Cascode with Load

M1

M2

M3

Vin

Gnd

Vbiasp1

Vbiasp2

Vout

Vbiasn2

Vbiasn1

Vdd

The single transistor amplifier can be replaced by anytransconductance, of course. In operational amplifiers, the

single transistor stage will be replaced by a differential amplifier.

CMOS Mixed Signal Design

Operational Amplifiers

Differential Amplifiers

Differential Amplifiers

Circuits which amplify the difference of two input voltages (eachof which has equal and opposite signal excursions) have manyadvantages over single ended amplifiers.

Noise picked up by both inputs gets canceled in the output.

Input and feedback paths can be isolated.

If both inputs have the same DC bias, the output isinsensitive to changes in the bias.

CMOS Mixed Signal Design

Operational Amplifiers

Differential Amplifiers

Some definitions

It is more convenient to represent the two input voltages andthe two output voltages by their mean and difference values.

vid ≡ vi1 − vi2

vicm ≡vi1 + vi2

2vod ≡ vo1 − vo2

vocm ≡vo1 + vo2

2

The common mode and differential gains are:

Adiff ≡vod

vid

Acm ≡vocm

vicm

CMOS Mixed Signal Design

Operational Amplifiers

Differential Amplifiers

Common Mode Rejection Ratio

For a good diff amp, the differential gain should be high andindependent of input common mode voltage, whereas thecommon mode gain should be as low as possible. Thecommon mode rejection ratio is:

CMRR ≡ 20 logAdiff

AcmdB

CMOS Mixed Signal Design

Operational Amplifiers

Differential Amplifiers

Will this do?

vi 1 vi 2

vo 1 vo 2

Vdd

One (not very good) way of implementing a diff amp is to usetwo single ended amplifiers as shown above.

Output = Vo1 − Vo2

Here the transistor currents, and hence the differential gain, willdepend on the common mode voltage. This is not desirable aswe would like the circuit to ignore the common mode voltageand to amplify just the difference signal.

CMOS Mixed Signal Design

Operational Amplifiers

Differential Amplifiers

The long tail pair

A better diff amp can be implemented by adding a currentsource to keep the total current constant.

vi 1 vi 2

vo 1 vo 2

Vdd

Is

Vs

If the common mode voltage appearing at thetwo inputs changes, it will only change thevoltage at the node where the two sources join(Vs). However, the current remains unchangeddue to the current source - and therefore, thedifferential gain is unaffected by the commonmode voltage.

CMOS Mixed Signal Design

Operational Amplifiers

Differential Amplifiers

Diff amp with single ended output

vi 1 vi 2

Vdd

Is

VsMn1 Mn2

Mp1 Mp2i out

iout = I(Mp2)− I(Mn2)

I(Mp2) = I(Mp1) (current mirror)I(Mp1) = I(Mn1) (series connection)

iout = I(Mn1) − I(Mn2) = gm(vi1 − vi2)

iout ≡ Gm(vi1 − vi2) = Gmvid

Thus we have a single output which is proportional to thedifference of inputs.The effective Gm is just the gmof either of the diff-pairtransistors.

CMOS Mixed Signal Design

Operational Amplifiers

Differential Amplifiers

Gain of the OTA

vi 1 vi 2

Vdd

Is

VsMn1 Mn2

Mp1 Mp2i out

This circuit is also called an operationaltransconductance amplifier (OTA) because theoutput is a current.

Rout = ro(Mn2)‖ro(Mp2)

So DC voltage gain = gm(ro(Mn2)‖ro(Mp2))

and GBW =gm

CL

CL includes Cdg and Cd for Mn2 and Mp2, as well as the loadcapacitance.

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Two stage op-amp

vi 1 vi 2

Vdd

VsMn1 Mn2

Mp1 Mp2i out

VbiasMn3

Mp3

Mn4

vout

A simple two stage op-amp can be constructedby following the diff amp by a common sourcestage with a constant current load.The current source for the diff amp isimplemented by an n channel MOS transistorin saturation.

The two stage design permits us to optimize the output stagefor driving the load and the input stage for providing gooddifferential gain and CMRR.A diff amp with n transistors and an output stage with p driver isshown. However, a p type diff amp with n type common sourcestage is better for low noise operation.

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

op-amp eq. circuit

gm11 v1 gm22 v2

R1 R2C1 C2

v2 v0

Differential Stage Output Stage

Each stage of the opamp can be considered a gain stage with asingle pole frequency response.Notice that the phase of the output of each stage will undergo aphase change of 90o around its pole frequency.

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

op-amp Compensation

Most opamps are used with negative feedback.If the opamp stages themselves contribute a phase differenceof 180o, the negative feedback will appear as positive feedback.If the gain at this frequency is > 1, the circuit will becomeunstable.Both stages of the opamp have a single pole frequencyresponse.The poles for both the stages can be quite close together.As a result, they can contribute a total of 180o phase shift overa relatively narrow frequency range.

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Pole Splitting

To avoid instability, we would like to arrange things suchthat the gain drops to below one by the time the phase shiftthrough the opamp becomes 180o.- Even if it means that we have to reduce the bandwidth ofthe op amp.

This is often achieved by a technique called pole splitting.

The lower frequency pole is brought to a low enoughfrequency, so that the gain diminishes to below one by thetime the second pole is reached.

One way of doing this is to use a Miller capacitor.

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Eq. Circuit of compensated Opamp

gm11 v1 gm22 v2

R1 R2C1 C2

v2 v0

Differential Stage Output StageCc

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Miller Compensation

C

A1 A2

The diff amp stage sees a load capacitance A 2C.This brings its pole to 1

ro1A2C .The total DC gain is A1A2.The bandwidth is set by the diff amp stage.

Therefore the gain-bandwidth product is:

A1A2

ro1A2C=

A1

ro1C

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Slew rate

Miller compensation also sets the slew rate of the op amp.

vi 1 vi 2

Vdd

VsMn1 Mn2

Mp1 Mp2i out

VbiasMn3

Mp3

Mn4

vout

For large signal input, the output current of theOTA = tail current.The effective load capacitance for this stage isA2 × C.

A2 × CdVdt

= I(Mn4)

Output of the OTA slews at a rate I(Mn4)A2×C .

So the op amp slews at a rate which is A2 times this value.

Hence the slew rate of the op amp is I(Mn4)C .

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Design Equations-I

vi 1 vi 2

Vdd

VsMn1 Mn2

Mp1 Mp2i out

VbiasMn3

Mp3

Mn4

vout

All transistors must be saturated

I(Mn1) = I(Mn2) =I(Mn4)

2I(Mn1) = I(Mp1) (Series connection)

I(Mp1) = I(MP2) (Mirror)

Mp1 is always saturated.Mp1, Mp2 have the same Vs, Vg, IdSince W/L(Mp2) = W/L(Mp1), MP2 will have the same Vd asMp1, and so, will be saturated.

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Design Equations-II

vi 1 vi 2

Vdd

VsMn1 Mn2

Mp1 Mp2i out

VbiasMn3

Mp3

Mn4

vout

Mp3 has the same Vs, Vg as Mp1.

IfI(Mp3)

I(Mp1)=

W/L(Mp3)

W/L(Mp1)

Mp3 will have the same Vd as Mp1and will be saturated.

The slew rate determines I(Mn4).

I(Mn4) = C × Slew Rate

I(Mn1) = I(Mn2) =I(Mn4)

2

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Design Equations-III

vi 1 vi 2

Vdd

VsMn1 Mn2

Mp1 Mp2i out

VbiasMn3

Mp3

Mn4

vout

GBW determines gm of Mn1, Mn2.

GBW =gm(Mn2)

C

Since the current as well as gm of Mn1 and Mn2 are now known

gm(Mn2) =√

2K ′W/L(Mn2)I(Mn2)

W/L(Mn1) = W/L(Mn2)

This will determine the geometries of Mn1 and Mn2.

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Design Equations-IV

Currents through Mn2,Mp2, Mp3 and Mn3 are known

(go = Id/VA) where VA is the Early voltage = L/λ′

The overall DC gain is given by

A =gm(Mn2)gm(Mp3)

(go(Mn2)||go(Mp2))(go(Mp3)||go(Mn3))

As gmfor Mn2 and all govalues are known, this determines thegmfor MP3.Once we know the gmas well as the current for Mp3, we cancalculate its geometry.

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Example Design: Specifications

K ′(n) = 120µA/V2, K ′(p) = 60µA/V2

VT (n) = 0.4V, VT (p) = −0.4V

Early Voltage VA = 20V for both p and n channel transistors

Op amp DC gain = 80dB (Voltage gain of 10000)

Gain Bandwidth product = 50MHz, slew rate = 20V/µs

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Example Design-1

vi 1 vi 2

Vdd

VsMn1 Mn2

Mp1 Mp2i out

VbiasMn3

Mp3

Mn4

vout

We choose a compensation capacitor value of 2 pF.

We shall bias the second stage at 5 times the tail current ofthe differential stage.

From the slew rate, I(Mn4) = 2 × 10−12 × 2010−6 = 40µA

Therefore I(Mn1) = I(Mn2) = I(Mp1) = I(Mp2) = 20µAand I(Mp3) = I(Mn3) = = 200µA

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Example Design-2

vi 1 vi 2

Vdd

VsMn1 Mn2

Mp1 Mp2i out

VbiasMn3

Mp3

Mn4

vout

From the GBW requirement,

2π × 50 × 106 =gm(Mn2)

2 × 10−12

This gives gm(Mn2) ≃ 628µ℧.To get a gmof 628 µ℧ with a current of 20µA,

628 × 10−6 =√

2 × 120 × 10−6 × (W/L) × 20 × 10−6

this gives W/L(Mn2) ≈ 82 = W/L(Mn1)

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Example Design-3

vi 1 vi 2

Vdd

VsMn1 Mn2

Mp1 Mp2i out

VbiasMn3

Mp3

Mn4

vout

goof Mn2 and Mp2 = 20µA/20V = 1µ℧.Therefore go(Mn2)‖go(Mp2) = 2µ℧.goof Mn3 and Mp3 is = 200µA/20V = 10µ℧.Therefore go(Mp3)‖go(Mn3) = 20µ℧.

DC gain = 10000 =628µ℧

2µ℧×

gm(Mp3)

20µ℧

So, gm(Mp3) ≃ 637µ℧

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Example Design-4

vi 1 vi 2

Vdd

VsMn1 Mn2

Mp1 Mp2i out

VbiasMn3

Mp3

Mn4

vout

To get a gmof 637µ℧ with a drain current of 200µA, weshould have

637 × 10−6 =√

2 × 60 × 10−6 × (W/L) × 200 × 10−6

which gives the W/L of Mp3 ≈ 17.Since the geometry of Mp1 and Mp2 has to be in thecurrent ratio with Mp3, W/L of Mp1 and Mp2 should be≈ 1.7.

CMOS Mixed Signal Design

Operational Amplifiers

The two stage op-amp

Example Design-5

vi 1 vi 2

Vdd

VsMn1 Mn2

Mp1 Mp2i out

VbiasMn3

Mp3

Mn4

vout

Finally, we assume that an n type reference bias transistorof W/L = 4 is available with a current of 10 µA. This willgive the W/L of Mn4 and Mn3 as 16 and 80 respectively.

This completes the design for the simple two stage op amp.

CMOS Mixed Signal Design

Operational Amplifiers

Cascode Opamps

Telescopic Cascode Opamp

Vdd

Gnd

Vbiasp1Vbiasp2

Vbiasn2

Vbiasn1

Vout

Vin + Vin -

+

-

The telescopic cascode is a differential versionof the cascode amplifier discussed earlier.

Its gain is comparable to the two stage op-amp.

The output impedance is (very) high!

The output impedance in conjunction with theload capacitance constitutes the dominant poleof the system.

CMOS Mixed Signal Design

Operational Amplifiers

Cascode Opamps

Telescopic Cascode Opamp

Gain is comparable to the two stage opamp (product of twosingle stage amplifiers).

It needs a higher supply voltage compared to a two stageopamp.

The output stage is high impedance, so the dominant poleis at the output.

Compensation is provided by the load capacitance. So aminimum value of load capacitance is required for stability.

The output common mode voltage is different from theinput common mode voltage range.

This presents difficulties in direct coupling to the next stageand DC feedback to its own input.

CMOS Mixed Signal Design

Operational Amplifiers

Cascode Opamps

Folded Cascode

The common mode voltage incompatibility of a telescopiccascode can be solved by using a folded cascode.

-+

Vdd

Gnd

Vbiasp1

Vbiasp2

Vbiasn2

Vbiasn1

VoutVin + Vin -

CMOS Mixed Signal Design

Push Pull Output Stage

Push-Pull Op Amp

Differential to single ended conversion can be done in theoutput stage, by using a push-pull driver. The output loads inthe differential stage (Mp1 and Mp2) are diode connected.

Vdd

Gnd

Mp1 Mp2

Mn1 Mn2

Mn3 Mn4

Mp3

Vbias

vi- vi+

Mp4

Mn5

Vs

Out

Current through Mp2 is mirrored inthe output p transistor Mp4.

Current through Mp1 is mirrored intoa pMOS (Mp3) and passed througha diode connected nMOS (Mn3).

This current is mirrored in the outputstage nMOS (Mn4).

Mirroring ratio of Mp4 to Mp2 andMn4 to Mn3 should be identical (andcan be large).