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Compound Semiconductor Week 2012

39th

International Symposium on Compound Semiconductors

24th

International Conference on Indium Phosphide and Related Materials

August 27-30, 2012

University of California

Santa Barbara, CA USA

Table of Contents

Welcome 2

General Information 3

ISCS/IPRM Conference Proceedings & Awards 5

ISCS 2012 Committees 7

IPRM 2012 Committees 10

Short Course Descriptions 13

Plenary Speakers 14

Conference Program-at-a-Glance 17

Oral Sessions Monday Aug. 27 21

Joint Poster Sessions Monday Aug. 27 26

Joint Rump Session Monday Aug. 27 33

Oral Sessions Tuesday Aug. 28 34

Joint Late News Tuesday Aug. 28 49

Oral Sessions Wednesday Aug. 29 50

Oral Sessions Thursday Aug 30 61

Exhibitors & Sponsors 68

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WELCOME

We welcome you to Compound Semiconductor Week (CSW) 2012 in Santa Barbara,

California, following CSW 2010 in Takamatsu, Japan and CSW 2011 in Berlin, Germany. This

is the premier forum for the dissemination of research findings on all aspects of compound

semiconductors. The 39th International Symposium on Compound Semiconductors (ISCS 2012)

and the 24th International Conferences on Indium Phosphide and Related Materials (IPRM 2012)

will again be co-located in Santa Barbara during CSW 2012. This will allow you to freely attend

sessions at both conferences.

CSW 2012 will start with a joint plenary session. The four distinguished plenary

speakers this year and the titles of their talks are William Deal, THz Integrated Circuits; John

Geisz, III-V Semiconductors for High-Efficiency Multijunction Photovoltaics; Andrew Shields,

Semiconductor Devices for Quantum Information Applications; Marc A. Taubenblatt, Optical

Interconnects for Computer-com. The opening session will be followed by 35 invited talks, 143

contributed oral presentations, and 55 poster presentations. Also included in the technical

program are two short courses and a rump session organized by IPRM.

The week will also include an awards session, an excursion to downtown Santa Barbara

with wine tasting and the conference barbeque on Goleta beach.

We extend our sincere thanks and appreciation to members of the Program Committees

for their tireless efforts in assembling a high quality technical program and to members of the

International Steering Committees and the UCSB Committee on Local Arrangements for their

help. We also thank the exhibitors for their participation and support and gratefully

acknowledge the support provided by the Office of Naval Research.

We wish you all a pleasant stay in Santa Barbara and an enjoyable week attending CSW

2012, mingling with your colleagues, and taking in the sights and sounds of the Pacific coast.

Pallab Bhattacharya Mark Rodwell

Conference Chair, ISCS 2012 Kent Choquette

Conference Chairs, IPRM 2012

Diana Huffaker Miguel Urteaga

Program Chair, ISCS 2012 Tom Koch

Program Chairs, IPRM 2012

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Important On-Site Information

Welcome to UC Santa Barbara! The campus community has joined in an effort to make your

stay a pleasant and rewarding experience. We hope that you will take the opportunity to explore

the campus and local area, and that you will enjoy your time here.

ISCS/IPRM Program Schedule Please refer to this program book for details regarding session locations and special events. This

program book also contains a University Center floor plan with internet stations, Lagoon Plaza

exhibition floor plan and a UCSB campus map specific to the conference.

Registration Hours will be posted during the conference.

Parking Information

Your parking permit is only valid in the lot designated on the permit. After 5:00pm and during

the evening events on Monday and Tuesday, your Lot 22 Parking Permit is valid in Lot 3 near

the University Center. Please refer to the campus map in this program book for the location of

both of these lots. Your permit is NOT VALID in the following spaces: 30-Minute, Disabled,

Meters, Reserved or Restricted, Coastal Access, Enforced at all Times.

Meals in the Dining Commons

All participants staying on-campus should use their room keys to allow them access to meals in

the dining commons.

Additional Meals Your conference registration fee also includes the Welcome Reception Dinner on Sunday, Poster

Session Reception on Monday, Rump Session Reception on Monday, refreshment breaks,

catered lunches Monday through Wednesday, Exhibitor Reception on Tuesday and the Beach

Barbeque on Wednesday.

Participants Staying On-Campus (Campus Shuttle Service) Please make sure that you sign up at the Manzanita Village Residence Hall front desk for a

return shuttle, should you need one, to either the Santa Barbara Airport or the Goleta location for

the Santa Barbara Airbus.

Residential Network & University Center Wireless Network/Computer Stations All residence hall sleeping rooms offer free wireless high-speed Internet access.

Participants staying on-campus will receive a Perm Number & Pin at the residence hall upon

check-in. These numbers will also be used to access the wireless network in the common areas

in the residence hall and in the University Center. A Residential Network Service Center is

available for support: Please call the ResNet Service Center at 805-893-8777 (hours are

weekdays, 4:00-8:00pm / Saturdays and Sundays, 11:00am-3:00pm).

Off-campus attendees (those NOT staying in the residence halls), can receive a User ID and

Password for wireless access in the University Center at the Conference Registration Desk.

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Exhibition Schedule The exhibit area will be located adjacent to the University Center on the outdoor Lagoon Plaza.

Monday, August 27 9:30am - 5:00pm & 7:00 - 8:30pm

Tuesday, August 28 8:30am - 6:30pm

Wednesday, August 29 8:30am - Noon

Thursday, August 30 8:30am - Noon

Compound Semiconductor Week Abstracts

Both the IPRM and ISCS conference abstracts will be distributed at the conference on memory

stick.

Technical Program

The scientific program of CSW 2012 consists of plenary and invited talks as well as contributed

oral and poster presentations.

Invited talks will be divided into 25 minutes of presentation and 5 minutes for questions and

discussion.

Contributed oral presentation will be divided into 12 minute presentations with additional 3

minutes for questions and discussion.

ISCS/IPRM speakers have the opportunity to upload their talk to the UCSB “presentation

server.” Presentations will be accepted on the server if they are submitted at least 1 full business

day prior to the conference. After that time, you will need to bring your presentation materials on

removable media such as a USB flash drive.

Poster Presentation Guidelines

The Poster Session Reception will be held on Monday inside Corwin Pavilion East and outside

in Lagoon Plaza from 3:00-5:00pm. Push pins will be provided. There will be 1 poster on each

side of the board, for a total of 2 posters per board. Participants may begin putting up their

posters at Noon on Monday. Posters will remain up all day, and must be removed by 8:30pm on

Monday. Posters left behind will not be saved.

Excursion

On Wed. Aug. 29 from 1:30-5:30PM there will be a Santa Barbara Wine Tour Excursion.

Payment is separate for this activity. Departure from Manzanita Village Bus Loop at 1:30 PM.

Joint Conference Barbeque

On Wed. Aug. 29 from 5:30-7:30PM there will be a Goleta Beach BBQ. Payment is included in

registration.

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ISCS 2012 Conference Proceedings

Proceedings of the ISCS 2012 will be published as peer reviewed articles in physica status

solidi(c). The guest editors for this issue will be Professor Sanjay Krishna and Dr. Elena Plis,

University of New Mexico, Albuquerque. Manuscripts submitted for publication in pss(c)

should be up to 4 printed pages for contributed presentations and up to 8 printed pages for

invited presentations. Manuscripts in MS Word or PDF format must be submitted by August 26,

2012, using the online manuscript submission system: http://mc.manuscriptcentral.com/pssc

IPRM 2012 Conference Proceedings

The IPRM four page extended abstracts will be published on IEEExplore. The abstracts are due

July 13, 2012.

ISCS 2012 Awards

The International Symposium for Compound Semiconductors is the venue for presentation of

four prestigious awards:

• The Welker Award

• The Quantum Device Award

• The Young Scientist Award

• The Best Student Paper Award

The Welker Award was established in 1976 by Siemens AG in honor of Heinrich Welker, a

pioneer in the field of III-V compound semiconductors. The award is now supported by Osram

GmbH and presented for outstanding and pioneering research in the area of III-V compound

semiconductors.

The Quantum Device Award was initiated by Fujitsu Quantum Devices Ltd. in 2000 and is

now sponsored by the Japanese Section of the ISCS Steering Committee. The award honors

pioneering contributions to the field of compound semiconductor and quantum/nanostructure

devices which have made a major impact in the past two decades. New device concepts and

structures, device physics and modeling as well as device realization and characterization are

areas included in the award.

The Young Scientist Award is supported by the Symposium. Established in 1986, the award

acknowledges technical achievements in the field of compound semiconductors by a scientist

younger than 40 years on the first day of the Symposium.

The Best Student Paper will be selected by members of the program committee.

Presentation of the ISCS Awards will be made at a special session at 5 PM on Tuesday, August

28, 2012.

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IPRM Awards

Following a long-standing tradition two IPRM awards will be presented:

• IPRM 2012 Award

• IPRM 2012 Best Student Paper Award

The IPRM 2012 Award honors scientific and technical achievements in the field as well as major

contributions to the organization of IPRM. The recipient will be selected by the IPRM

International Steering Committee prior to the conference. The Best Student Paper Award will be

presented on behalf of the Organization and the Program Committee.

Presentation of the IPRM Awards will be made at a special session at 5 PM on Tuesday, August

28, 2012.

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ISCS 2012 COMMITTEES

Conference Chair

Pallab Bhattacharya, University of Michigan, Ann Arbor, MI, USA

Program Chair

Diana Huffaker, University of California, Los Angeles, CA, USA

Program Committee

A. Crystal Growth and Deposition Techniques

Chair: James Gupta, National Research Council, Ottawa, Canada

Richard Arès, Université de Sherbrooke, Canada

Richard Campion, The University of Nottingham, UK

Fumitaro Ishikawa, Osaka University, Japan

Tsong-Sheng Lay, National Sun Yat-Sen University, Taiwan

Soile Suomalainen, Tampere University of Technology, Finland

Shumin Wang, Chalmers University, Gothenburg, Sweden

Erin Young, University of California, Santa Barbara, USA

B. Oxides and Carbon Related Materials

Chair: Shizuo Fujita, Kyoto University, Japan

Taichi Otsuji, Tohoku University, Sendai, Japan

Alexander A. Balandin, University of California, Riverside, USA

Christopher J. Stanton, University of Florida, Gainesville, USA

Shintaro Sato, AIST, Ibaraki, Japan

Junichiro Kono, Rice University, Houston, USA

Shigefusa Chichibu, Tohoku University, Sendai, Japan

C. Nanotechnologies and Nanostructures

Chair: Yoshiro Hirayama, Tohoku University, Sendai, Japan

Munetaka Arita, University of Tokyo, Japan

Jonathan Finley, Technical University, Munich, Germany

Thomas Ihn, ETH Zürich, Switzerland

Chennupati Jagadish, Australian National University, Canberra, Australia

Kazuhiko Matsumoto, Osaka University, Japan

Robert Westervelt, Harvard University, Cambridge, USA

Baolai Liang, University of California, Los Angeles, USA

Andy Sachrajda, National Research Council, Ottawa, Canada

D. Physics, Simulation and Characterization

Chair: Holger Eisele, Technical University, Berlin, Germany

Randall M. Feenstra, Carnegie-Mellon University, Pittsburgh, USA

Shiro Tsukamoto, Anan National College of Technology, Tokushima, Japan

Friedhelm Bechstedt, Friedrich-Schiller University, Jena, Germany

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E. Emitters, Photodectors, Photovoltaics

Chair: Eric Tournié, Université Montpellier, France

Connie Chang-Hasnain, University of California, Berkeley, USA

John P. David, University of Sheffield, UK

Jérome Faist, ETH Zürich, Switzerland

Takeji Komiyama, University of Tokyo, Japan

Sanjay Krishna, University of New Mexico, Albuquerque, USA

Sarah Kurtz, National Renewable Energy Laboratory, Washington DC, USA

François Lelarge, Alcatel - Thales 3-5 Lab, Marcoussis, France

Martin Walther, Fraunhofer Institute, Freiburg, Germany

F. High Frequency and High Power Electronics

Chair: Tomás Palacios, Massachusetts Institute of Technology, Cambridge, USA

Kevin J. Chen, Hong Kong University of Science and Technology, Kowloon, Hong Kong

Toshihide Kikkawa, Fujitsu Laboratories Ltd., Atsugi, Japan

Tetsuya Suemitsu, Tohoku University, Sendai, Japan

Martin Kuball, University of Bristol, United Kingdom

Rüdiger Quay, Fraunhofer, Institute, Freiburg, Germany

Colombo R. Bolognesi, ETH Zürich, Switzerland

Mark Rodwell, University of California, Santa Barbara, USA

T. Paul Chow, Rensselaer Polytechnic Institute, Troy, USA

Gaudenzio Meneghesso, University of Padova, Italy

G. New Device Concepts (Spintronics, Metamaterials, Nanomagnetics)

Chair: Igor Zutic, University of Buffalo, USA

Pavle Radovanovic, University of Waterloo, Canada

Karel Vyborny, Academy of Sciences, Czech Republic

Hanan Dery, University of Rochester, USA

H. Flexible Optoelectronics Materials and Devices

Chair: Stephen Pearton, University of Florida, Gainesville, FL, USA

Chennupati Jagadish, Australian National University, Canberra, Australia

Elvira Fortunato, Universidade Nova de Lisboa, Portugal

Bengt Svensson, University of Oslo, Norway

Young Woo Heo, Kyungpook National University, Daegu, South Korea

I. Sensors and Actuators

Chair: Fan Ren, University of Florida, Gainesville, USA

Wayne Johnson, Kopin Corporation Inc., Taunton, USA

Jihyn Kim, Korea University, Seoul, South Korea

Shangjr (Felix) Gwo, National Tsing Hua University, Hsinchu, Taiwan

Jeffrey LaRoche, Raytheon, Andover, USA

ISCS International Steering Committee

Chair: Yasuhiko Arakawa, University of Tokyo, Japan

Oliver Ambacher, Fraunhofer IAF, Freiburg, Germany

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Colombo Bolognesi, ETH Zürich, Switzerland

James Coleman, University of Illinois at Urbana Champaign, USA

Nicolas Grandjean, École Polytechnique Fédérale de Lausanne, Switzerland

James S. Harris, Stanford University, Stanford, USA

Yoshiro Hirayama, Tohoku University, Sendai, Japan

Diana Huffaker, University of California at Los Angeles, USA

Umesh Mishra, University of California at Santa Barbara, USA

Henning Riechert, Paul Drude Institute, Berlin, Germany

Tom Tiedje, University of British Columbia, Canada

Eric Tournié, University of Montpellier, France

Charles Tu, University of California at San Diego, USA

Jong-Chun Woo, Seoul National University, South Korea

Naoki Yokoyama, National Institute of Advanced Industrial Science and Technology, Japan

Awards Committee

Chair: James J. Coleman, University of Illinois, Urbana-Champaign, USA

Henning Riechert, Paul Drude Institute, Berlin, Germany

Klaus Streubel, OSRAM, München, Germany

Charles Tu, University of California, San Diego, USA

Osamu Wada, Kobe University, Kobe, Japan

Claude Weisbuch, Ecole Polytechnique,Palaiseau, France

Naoki Yokoyama, National Institute of Advanced Science and Technology, Japan

Pallab Bhattacharya, Ex-Officio, University of Michigan, USA

Publication Editor (Physica Status Solidi)

Sanjay Krishna, University of New Mexico, Albuquerque, USA

UCSB Committee on Local Arrangements

Chair: Umesh Mishra

Whitney Morris

Angelica Diaz

Lisa Dahlen

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IPRM 2012 COMMITTEES

Conference Chairs

Mark Rodwell, University of California, Santa Barbara, USA

Kent D. Choquette, University of Illinois at Urbana-Champaign, USA

Program Chairs

Miguel Urteaga, Teledyne Scientific, Thousand Oaks, California, USA

Tom Koch, University of Arizona, Tuscon, USA

Program Committees

A. Bulk Materials and Epitaxy Minjoo Larry Lee (chair), Yale University, USA

Mark Wistey, University of Notre Dame, USA

John Geisz, National Renewable Energy Laboratory, USA

Amy Liu, IQE, USA

Paul Pinsukanjana, Intelliepi, USA

Bernardette Kunert, NAsP III/V GmbH, Germany

Kerstin Volz, Philipps-University Marburg, Germany

Thomas Hannappel, Ilmenau University of Technology, Germany

Yoon Soon Fatt, Nanyang Technological University, Singapore

K.Y. Norman Cheng, National Tsing Hua University, Taiwan

Akihiro Wakahara, Toyohashi University of Technology, Japan

Hiroo Yonezu, Toyohashi University of Technology, Japan

B. Nanostructures and Novel Materials Lars-Erik Wernersson (Chair), Lund University, Sweden

Ali Javey, UCBerkeley, USA

Val Zwiller, TU Delft , Netherlands

Suman Datta, Penn State, USA

Philip Pool, CNRC, Canada

Zhiming M. Wang, University of Arkansas, USA

Philippe Caroff, IEMN Lille, France

Ikuo Suemune, Hokkaido University, Japan

Udo Pohl, TU Berlin, Germany

C. Photonic and Photonic/Electronic Integration Technologies Christopher R. Doerr (Chair), Alcatel-Lucent Bell Labs, USA

Francisco Soares, Heinrich-Hertz-Institut (FhG/HHI), Germany

Fouad Karouta, Australian National Fabrication Facility, Australia

Jean-Louis Gentner, Alcatel-Thales III-V Lab, France

Masaki Kato, Infinera, USA

Pavel Cheben, NRC Institute for Microstructural Sciences, Canada

Michael Robertson, CIP, UK

Takaeshi Fujisawa, NTT, Japan

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D. Electron Devices Keisuke Shinohara (Chair), HRL Labs, USA

Gerry Mei, Northrop Grumman Corporation, USA

Arnulf Leuther, Fraunhofer IAF, Germany

Tom Low, Agilent, USA

Minoru Ida, NTT, Japan

Colombo Bolognesi, ETHZ, Switz

Josh Bergman, Teledyne Scientific, USA

Mitsuru Taneka, University of Tokyo, Japan

Yasuyuki Miyamoto, Tokyo Instititute of Technology, Japan

Eric Lind, Lund University, Sweden

E. Optoelectronics and Related Processing Technologies Joe Campbell (Chair), University of Virginia, USA

Christophe Kazmierski, Alcatel-Thales III-V Laboratories, France

Wyn Meredith, Compound Semiconductor Technologies, USA

Martin Moehrle, FhG-HHI, Germany

Sebastian Lourdudos, KTH, Sweden

Andreas Steffan, u²t Photonics AG, Germany

Eun Soo Nam, ETRI, Korea

Tongning Li, InPhenix, Inc., USA

Hideo Arimoto, Hitachi, Japan

IPRM International Steering Committee

Norbert Grote (Chair), Fraunhofer HHI, Germany

Shigehisa Arai, Tokyo Tech, Japan

Hajime Asahi, Osaka University, Japan

Brad Boos, Naval Research Laboratories, USA

Kent D. Choquette, University of Illinois, USA

Russ Dupuis, Georgia Institute of Technology, USA

Takatomo Enoki, NTT, Japan

Stephen Forrest, University of Michigan, USA

Hideki Hasegawa, Hokkaido University, Japan

Tahir Hussain, Hughes Research Laboratories, USA

Joe Lorenzo, Air Force Research Laboratories, USA

Sebastian Lourdudoss, Royal Institute of Technology, Sweden

John Marsh, Intense, UK

Yuichi Matsushima, Waseda University, Japan

Drew Nelson, IQE, UK

Greg Olsen, Sensors Unlimited, USA

Abderrahim Ramdane, CNRS/LPN, France

Mark Rodwell, University of California at Santa Barbara, USA

André Scavennec, Alcatel Thales III-V Lab, France

Franz-Josef Tegude, University of Duisburg, Germany

Iain Thayne, Glasgow University, UK

Osamu Wada, Kobe University, Japan

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Joel N Schulman, Aerospace, USA

Young-Kai Chen, Alcatel-Lucent, USA

Yoshiaki Nakano, University of Tokyo, Japan

UCSB Committee on Local Arrangements

Chair: Mark Rodwell

Trea DePrima

Whitney Morris

Angelica Diaz

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Short Course Descriptions

On Sunday August 26, two short courses will be presented. Registration is separate for each of

the two courses.

GaN Transistors: Physics and Technology (1-3pm) Debdeep Jena ([email protected])

University of Notre Dame, Notre Dame, IN 46556 USA

GaN transistors are attractive for high-power RF electronics, and are becoming increasingly

attractive for high-voltage switching. The advantages stem from the wide bandgaps, availability

of heterostructures with large band offsets, and electronic polarization. Since the concept of

polarization is relatively new in semiconductors, and yet, plays the central role in the design of

high-performance GaN transistors, the goals of this short course will be to discuss:

1) The concept of electronic polarization in semiconductors,

2) Effect of polarization in device electrostatics and transport,

3) How polarization has guided the design of high performance GaN HEMTs,

4) Open problems, and possible directions in the future.

InP HBT Circuits: RF, Tera-hertz and Mixed-Signal Circuits (3:30-5:30pm) Myung-Jun Choe ([email protected]) and Munkyo Seo ([email protected])

Teledyne Scientific Company, Thousand Oaks, CA, 91360 USA

Recent advances in InP HBT technologies have enabled design and implementation of 300-500+

GHz ICs, opening a pathway to fully integrated tera-hertz (0.3-3 THz) systems for imaging,

radar and communication. At these frequencies, we face several fundamental design challenges:

available active device gain is relatively low, while losses from passive devices are relatively

high. Local interconnects become an essential circuit element, as overall circuit sizes are

relatively large compared to a wavelength. Traditional analog-IC design style may not directly

scale to sub-millimeter-wave frequencies, while traditional RF design style may not be optimal

in terms of circuit size and operating bandwidth. For a successful IC design, a holistic design

approach is therefore necessary, where device, circuit, and their electromagnetic environment are

altogether considered from the early design phase. In the first part of this class, the design and

implementation of InP HBT ICs will be presented to illustrate such a design approach, including

various transceiver building blocks and a single-chip phased-locked loop, operating at 300 GHz

and beyond.

InP HBT technology has reached to a stage that high performance analog circuits can benefit

from its superior device performance. The device and interconnect technology has become

mature enough to lead to successful demonstrations of more complicated mixed-signal circuits

with unprecedented performance. During the latter part of this short course, a digital-to-analog

converter (DAC) is used as an example mixed-signal circuit that enjoys the high-speed operation

and large-scale integration of today’s InP HBT technology, and we will discuss:

1) DAC performance limitations,

2) A short review of DAC architectures ,

3) An example implementation of high-frequency high-dynamic range DAC,

4) Remaining issues and potential solutions to overcome the limitations.

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PLENARY SPEAKERS

THz Integrated Circuits

William Deal

Northrop-Grumman

Abstract:

In this talk, progress in scaling integrated circuits towards 1 THz operating frequencies is

described. In particular, integrated receiver results at 670 GHz will be presented, along with

Low Noise Amplifier (LNA) and Power Amplifier (PA) results. Packaging approaches will be

described, along with progress towards scaling to 850 GHz.

Biography

Dr. Bill Deal is a Department Staff Engineer at Northrop Grumman’s RF Product Center in

Redondo Beach, CA. He leads several MMIC development efforts, including Northrop

Grumman’s contract for the DARPA THz Electronics program, as well as developing his own

microwave and millimeter wave designs. He has authored and co-authored more than 75 journal

and conference papers, as well as 5 book chapters. Dr. Deal received the IEEE MTT-S

Outstanding Young Engineer Award in 2009, and the 2012 IEEE MTT-S “Tatsuo Itoh” Best

Paper Award for his work on Sub-Millimeter Wave Electronics.

III-V Semiconductors for High-Efficiency Multijunction Photovoltaics

John Geisz

National Renewable Energy Laboratory

Abstract

High-efficiency conversion of sunlight into electrical energy using III-V semiconductor materials

has been improving steadily in recent years. Partitioning the solar spectrum with multiple III-V

pn junctions, connected in series with tunneling diodes, can theoretically achieve 85% efficiency.

Lattice-matched three-junction GaInP/GaAs/Ge solar cells have achieved over 41% efficiency

under concentration, but continued improvements require a wider palette of compatible band

gaps. Novel III-V materials such as dilute nitrides and metamorphic (lattice-mismatched)

InGaAs ternaries are promising to better optimize band gaps and increase the number of

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junctions. Indeed, these materials have already pushed the efficiencies to 43.5% and 42.6%

respectively, but low defect densities are required to realize the full potential. When non-

radiative recombination is reduced significantly, the radiative limits of efficiency can almost be

reached with proper optical management as demonstrated with a recent 28.2% single junction

GaAs solar cell. Luminescent coupling between adjacent junctions can also become an important

optical effect when non-radiative mechanisms are minimized.

Biography

John Geisz is a Senior Scientist at the National Renewable Energy Laboratory. He earned his

Ph.D. degree in Chemical Engineering from the University of Wisconsin (Madison) and his

bachelor's degree from the University of Michigan (Ann Arbor). John joined NREL in 1995

where he has been studying the OMVPE growth and characterization of a variety of III-V

semiconductor materials for high-efficiency photovoltaic applications, including dilute nitrogen

and boron-containing III-V alloys, III-V growth on silicon, and lattice-mismatched growth. His

work includes demonstration of several world record-setting solar cell efficiencies. John is an

author of over 100 scientific publications. He is a member of the executive committee of the

American Association of Crystal Growth and has helped organize several crystal growth

conferences.

Semiconductor Devices for Quantum Information Applications

Andrew Shields

Toshiba Research Europe Limited

Abstract:

Light emitting diodes containing a self-organized quantum dot as the emissive element may be

used to generate single photons, as well as polarization-entangled pairs. Electrical injection of

the recombining carriers has the advantage of negating the need for a pump laser and its

awkward alignment with the dot, while potentially also allowing individual devices to be

addressed in a quantum integrated circuit. Moreover, the contacts may also be used to control

several aspects of the emission. For example, using sub-nanosecond voltage pulses it is possible

to coherently control the dot states, allowing the wavefunction of the emitted single photons or

entangled pairs to be manipulated. Furthermore, indistinguishable photons may be generated

from different dots, a prerequisite for scaling photonic approaches to quantum information

processing, by tuning the emission wavelength of each dot with an applied voltage. Recent

progress in using semiconductor devices for quantum communications and quantum logic gates

will also be presented.

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Biography:

Andrew Shields received a First Class Degree and PhD in Physics from Imperial College,

London. He was awarded a Royal Society Fellowship to work at the Max Planck Institute for

Solid State Research in Stuttgart, before joining the permanent staff at Toshiba Research Europe

in Cambridge in 1993, where he is currently Assistant Managing Director. He is best known for

R&D on semiconductor devices and their applications, having co-authored over 230 peer

reviewed articles, generating over 4400 citations, and over 70 patent applications in the field. He

pioneered the use of quantum dots to generate single photon pulses, demonstrating a device

described as the “world’s dimmest” LED, and more recently the first LED for entangled light.

Other research interests include high-speed single photon and photon number detection using

avalanche photodiodes. His team developed the first quantum key distribution system with a

range over 100km and the first with a sustained secure bit rate over 1 Mbit/sec.

Optical Interconnects for Computer-com

Marc A. Taubenblatt,

IBM Research

Abstract: Computing systems are exponentially increasing their dependence on optical

interconnects to meet their scaling bandwidth needs. Steady increases in computation density

have put pressure on the interconnect infrastructure to keep up. The requirements for these

interconnects include a critical set of metrics, that historically have focused on cost, but

increasingly consider power and density. Furthermore, reliability (component and data) and

latency must be considered as well. Thus the path forward to increasing bandwidth in these

systems is becoming an increasingly complex set of trade-offs. This talk will describe the major

applications for optical interconnects in computer systems, the relative metrics for these

applications and consider new technologies in this context.

Biography:

Marc Taubenblatt is currently Senior Manager, Optical Communications and High Speed Test, at

IBM's T.J. Watson Research Center, focusing on optical interconnects and high speed electrical

packaging for computer systems, and test and innovative diagnostic techniques for high

performance computer chips. Marc has had responsibility for the IBM Research world wide

optical interconnect strategy for the past 11 years. He also manages a research program on

advanced computing technology. He received a BS degree in Electrical Engineering from

Princeton University and MS and PhD degrees in Electrical Engineering from Stanford

University. Marc has been at IBM Research for over 26 years and is a member of the IBM

Academy of Technology.

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Conference-at-a-Glance

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Monday August 27

8:15 AM – 12:00 PM

Opening and Plenary Session Room: Corwin Pavilion

Session Chairs: Mark Rodwell, University of California, Santa Barbara, USA

Pallab Bhattacharya, University of Michigan, USA

8:15 Opening Remarks

8:30 Plenary I

THz Integrated Circuits

William Deal, Northrop-Grumman, Redondo Beach, CA.

9:15 Plenary II

III-V Semiconductors for High-Efficiency Multijunction Photovoltaics

John Geisz, National Renewable Energy Laboratory, Golden, CO.

10:00 Coffee Break

10:30 Plenary III

Semiconductor Devices for Quantum Information Applications

Andrew Shields, Toshiba Research Europe Limited Cambridge, UK.

11:15 Plenary IV

Optical Interconnects for Computer-com

Marc A. Taubenblatt, IBM Research, T.J. Watson Research Center, NY.

12:00 PM – 1:30 PM Lunch Break

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Monday August 27

1:30 PM – 3:00 PM

Mo 1A: Nanowire Epitaxy and Applications Room: Corwin West

Session Chair: Yasuhiko Arakawa, University of Tokyo, Japan

1:30 Mo-1A.1

Emission Enhancement of Axial Ga(In)As Nanopillar Heterostructures with

GaAs(P) Diffusion Barriers (Invited)

A.C. Scofield, C. Tu, J.N. Shapiro, A. Lin, B.L. Liang, D.L. Huffaker, University of

California, Los Angeles, USA

2:00 Mo-1A.2

Polarization-Induced pn-Diodes in Wide Band Gap Nanowires with Tunable Deep

Ultraviolet Electroluminescence S. D. Carnevale, T. F. Kent, P. J. Phillips, M. J. Mills, S. Rajan, R. C. Myers, The Ohio

State University, USA

2:15 Mo-1A.3

Au-Assisted Growth of InAs Nanowires on GaAs(111)B, GaAs(100), InP(111)B,

InP(100) by MOVPE

Shin Murakami, Akihiro Funayama, Kazuhiko Shimomura, Takao Waho, Sophia

University, Japan

2:30 Mo-1A.4

Carrier Lifetimes in InGaN/GaN Disks- in- Nanowire and Characteristics of Green

Light Emitting Diodes

Shafat Jahangir, Animesh Banerjee, Pallab Bhattacharya, University of Michigan, Ann

Arbor, USA

2:45 Mo-1A.5

The Nanopillar Lasers: Enabling Monolithic Integration with Si-Photonics

Fanglu Lu, Kun Li, Kar Wei Ng, Wai Son Ko, Connie Chang-Hasnain, University of

California, Berkeley, USA

3:00 PM – 3:30 PM Coffee Break

23

Monday August 27

1:30 PM – 3:00 PM

Mo 1B: High Frequency Electronics Room: MultiCultural Center Theater

Session Chair: Tetsuya Suemitsu, Tohoku University, Sendai, Japan

1:30 Mo-1B.1

On-Chip Terahertz Photon Manipulation (Invited)

Kenji Ikushima, Tokyo University of A & T, Japan

2:00 Mo-1B.2

Impact of Vertical Leakage on the DC Performance of a Wafer-Bonded Aperture

Unipolar Transistor

Shalini Lal, Jing Lu, Stacia Keller, Steven P. Denbaars, Umesh K. Mishra, University of

California, Santa Barbara, USA

2:15 Mo-1B.3

AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks

K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji, T. Suemitsu,

Tohoku University, Japan

2:30 Mo-1B.4

Influence of a Thin InAlN Cap Layer on the Device Performance of N-Polar

InAlN/GaN MISHEMTs Grown by MOCVD

Jing Lu, Dan Denninghoff, Matthew Laurent, Geetak Gupta, Stacia Keller, Steven P.

DenBaars, Umesh K. Mishra, University of California, Santa Barbara, USA

2:45 Mo-1B.5

On the Origin of Electroluminescence Spots and Surface Defects on AlGaN/GaN

HEMTs upon Off-State Stress

M. Montes, M. J. Uren, M. Kuball, University of Bristol, United Kingdom

3:00 PM – 3:30 PM Coffee Break in Lagoon Plaza

24

Monday Aug. 27

1:30 PM – 3:00 PM

Mo 1C: Hybrid Integration Room: University Center Harbor Room

Session Chair:

1:30 Mo-1C.1

Compact InP-based 1Ã 2 MMI Splitter on Si Substrate with BCB Wafer Bonding

for Membrane Photonic Circuits

J. Lee, Y. Yamahara, Y. Atsumi, T. Shindo, N. Nishiyama, and S. Arai, Department of

Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan

1:45 Mo-1C.2

Reflection-Assisted Unidirectional Hybrid-Silicon Microring Lasers

D. Liang, S. Srinivasan, D. A. Fattal, M. Fiorentino, Z. Huang, D. T. Spencer, J. E.

Bowers, R. G. Beausoleil, Intelligence and Infrastructure Lab, HP Labs, Palo Alto, CA,

USA

2:00 Mo-1C.3

Integrated Hybrid III-V/Si Laser and Transmitter (Invited)

Guang-Hua Duan, III-V Lab

2:30 Mo-1C.4

Hybrid InP-Polymer 30 nm tunable DBR Laser for 10 Gbit/s direct Modulation in

the C-Band

H. Klein, C. Wagner, W. Brinker, F. Soares, D. Felipe, Z. Zhang, C. Zawadzki, N. Keil

and M. Moehrle, Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute,

Berlin, Germany

2:45 Mo-1C.5

High-Speed Optical Phased Array Using High-Contrast Grating All-Pass Filters

W. Yang, T. Sun, Y. Rao, M. Megens, T. Chan, B. W. Yoo1, D. A. Horsley, M. C. Wu1,

and C. J. Chang-Hasnain, Department of Electrical Engineering and Computer Sciences,

University of California at Berkeley, Berkeley, California, USA


25

Monday Aug. 27

1:30 PM – 3:00 PM

Mo 1D: Resonant Tunneling Devices Room: University Center State Street Room

Session Chair: Patrick Fay, University of Notre Dame. USA

1:30 Mo-1D.1

Tunnel Field-Effect Transistor Perspective (Invited)

Alan Seabaugh, University of Notre Dame

2:00 Mo-1D.2

71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with

GaAsSb/InGaAs Heterostructure

M. Fujimatsu, H. Saito, and Y. Miyamoto, Department of Physical Electronics, Tokyo

Institute of Technology, Tokyo, Japan

2:15 Mo-1D.3

A 1.3 pJ/bit Energy-Efficient Ultra-Low Power On-off mode Oscillator Using an

InP-based Quantum-effect Tunneling Device

J. Lee, J. Lee, J. Park and K. Yang, Department of Electrical Engineering, Korea

Advanced Institute of Science and Technology, Daejeon, Republic of Korea

2:30 Mo-1D.4

Optimized RTD-HBT VCO Design Based On Large Signal Transient Simulations

B. M nstermann, A. Tchegho, G. Keller and F. J. Tegude, Solid-State Electronics

Department, University of Duisburg-Essen, Germany

2:45 Mo-1D.5

Sensitive High Frequency Envelope Detectors Based on Triple Barrier Resonant

Tunneling Diodes

G. Keller, A. Tchegho, B. M nstermann, W. Prost, and F. J. Tegude, Center for

Semiconductor Technology and Optoelectronics, University of Duisburg Essen,

Duisburg, Germany


26

Monday Aug. 27

3:30 PM – 5:00 PM

Mo P: Joint Posters Room: Corwin Pavilion East & Lagoon Plaza

Session Chair: Diana Huffaker, University of California Los Angeles, USA

Miguel Murteaga, Teledyne Scientific, Thousand Oaks, California, USA

Mo-P.1

CF4 Plasma Treatment for Leakage Reduction in N-Polar

Geetak Gupta, Jing Lu, Shalini Lal, Stacia Keller, Umesh Mishra, University of


Mo-P.2

Impact of a Source Connected Field Plate on the High Voltage Performance of GaN-

on-Silicon HEMTs T. Boles, C. Varmazis, D. Carlson, M/ACOM Technology Solutions, USA; T. Palacios,

G. W. Turner, R. J. Molnar, Massachusetts Institute of Technology, USA

Mo-P.3

Insulating Behaviour of Interfaces in Regrown

B. Reuters, H. Hahn, H. Behmenburg, M. Heuken, H. Kalisch, A. Vescan, RWTH

Aachen University, Germany; M. Heuken, AIXTRON SE, Germany

Mo-P.4

Impact Ionisation on Planar GaAs Gunn Diodes: Analysis and Reduction by Anode

Design

M. Kuball, M. Montes, University of Bristol, U.K.; G. Dunn, A. Stephen, University of

Aberdeen, U.K.; Ata Khalid, C. Li, V. Papageorgiou, D. R. S. Cumming, University of

Glasgow, U.K.; C. H. Oxley, R. H. Hopper, DeMontfort University, U.K.

Mo-P.5

Hot-Carrier Degradation of AlGaN HEMT

Shubhajit Mukherjee, Ronald D. Schrimpf, M. Fleetwood, Yevgeniy S. Puzyrev,

Sokrates T. Pantelides, Vanderbilt University, USA; John M. Hinckley, Daniel Jasprit

Singh, University of Michigan, USA

Mo-P.6

Stress-Assisted Chemical Wet-Etching Process to Remove the Sapphire Substrate

for Vertical Devices

Wang Liancheng, Yi Xiaoyan, Guo Enqing, Zhang Yiyun, Xie Haizhong, Zheng

Haiyang,Wang Guohong, Chinese Academy of Sciences, China

27

Mo-P.7

Electrical Property of C16TAB/Si Hetero-Structure Yoko Deguchi, Mari Taguchi, Eriko Otsuka, Atsumi Ozawa, Hajime Imai, Japan

Women’s University

Mo-P.8

The Properties of the Interlayer on Vertical n-GaN Nanoneedle/p-Type Organic

Hybrid Heterostructure

Min Jeong Shin, Minji Kim, Dong Oh Kwon, Hyung Soo Ahn, Sam Nyung Yi, Korea

Maritime University, Korea; Young-Moon Yu, Pukyong National University, Korea;

Dong Han Ha, Korea Research Institute of Standards and Science, Korea

Mo-P.9

Anisotropic Metal-Assisted-Chemical-Etching for III-V Compound Semiconductors

Parsian Mohseni, Karthik Balasundaram, Matt DeJarld, Jae Cheol Shin, Debashis

Chanda, John A. Rogers, Xiuling Li, University of Illinois, Urbana, USA

Mo-P.10

Behavior of Hydride Vapor Phase Epitaxy-Grown GaN Layers on Sapphire

Substrates in Successful Natural Stress-Induced Separation

K. Yamane, M. Ueno, N. Okada, K. Tadatomo, Yamaguchi University, Japan; H. Furuya,

Tokuyama Corporation, Japan

Mo-P.11

Regrowth of AlGaN/GaN HEMT on N-Implanted Template W. Witte, B. Reuters, D. Fahle, H. Behmenburg, H. Hahn, H. Kalisch, A. Vescan, RWTH

Aachen University, Germany; M. Heuken, AIXTRON SE, Germany

Mo-P.12

AlGaAs Anode Heterojunction PIN Diodes

T. Boles, J. Brogle, D. Hoag, D. Carlson, M/ACOM Technology Solutions, USA

Mo-P.13

GaInAsP System Growth on InP/SiO2-Si and SiO2 Templates Fabricated by Direct

Wafer Bonding

Keiichi Matsumoto, Tatsunori Makino, Katsuya Kimura, Kazuhiko Shimomura, Sophia

University, Japan

Mo-P.14

Migration Enhanced Epitaxial Growth of m-Plane GaN on a m-Sapphire Substrates

Using Tungsten Carbide Buffer Layer

Wonbeom Chang, Sungkuk Choi, Soohoon Jung, Jinyeop Yoo, Jeungwoo Lee,

Byeongwoo Lee, Jiho Chang, National Korea Maritime University, Korea; Dongcheol

Oh, Hoseo University, Korea; Wonjae Lee, Dong eui university, Korea

28

Mo-P.15

Abnormal Change of Growth Rate During GaN Growth by Gas-Source MBE Under

the High V/III Ratio

Sungkuk Choi, Jinyeop Yoo, Soohoon Jung, Wonbeom Chang, Jeungwoo Lee, Sangtae

Lee, Jiho Chang, Korea Maritime University, Korea; Wonjae Lee, Dong eui University,

Korea; Takafumi Yao, Tohoku University, Japan

Mo-P.16

Effects of Nitridation Temperature for m-Plane GaN Grown on the m-Plane

Sapphire Substrate by Gas-Source Molecular Beam Epitaxy

Soohoon Jung, Sungkuk Choi, Jinyeop Yoo, Wonbeom Chang, Youngji Cho, Jeungwoo

Lee, Jiho Chang, Sangtae Lee, Korea Maritime University, Korea; Dongcheol Oh, Hoseo

University, Korea; Wonjae Lee, Dong Eui University

Mo-P.17

Selective Area Growth of GaAs Nanowires on Si Substrates Using Thin Porous SiOx

Layer

F. Karouta, S. Breuer, J. Tian, H. H. Tan, C. Jagadish, The Australian National

University, Australia

Mo-P.18

Doping Control in InAs Epitaxial Layers on Si

M. Berg, J. Svensson, S. Gorji Ghalamestani, E. Lind, L-E. Wernersson, Lund

University, Sweden

Mo-P.19

Strain Relaxation Mechanism in GaInN/GaN Heterostructure Characterized by in

situ X-ray Diffraction Monitoring During Metalorganic Vapor Phase Epitaxy

Growth

Motoaki Iwaya, Yasunari Kondo, Hiroyuki Matsubara, Mihoko Sowa, Toru Sugiyama,

Daisuke

Iida, Tetsuya Takeuchi, Satoshi Kamiyama, Meijo University, Japan; Isamu Akasaki,

Nagoya University, Japan

Mo-P.20

Characterization of Defects in InAs/GaSb Superlattice Infrared Detectors Using

Synchrotron White Beam X-ray Topography and Etch Pit Decoration

Martin Walther, Volker Daumer, Frank Rutz, Matthias Wauro, Johannes Schmitz, Lutz

Kirste, Robert Rehm, Fraunhofer-Institut für Angewandte Festkörperphysik, Germany;

Andreas Danilewsky, Albert-Ludwigs-Universität Freiburg, Germany; Ralf Scheibner,

AIM Infrarot-Module GmbH, Germany

Mo-P.21

Incident Angle Resolved Cathodoluminescence Study of ZnO Single Crystals

T. Onuma, Tokyo National College of Technology, Japan; T. Yamaguchi, T. Honda,

Kogakuin University, Japan

29

Mo-P.22

Carrier Dynamics and Localization in AlInN/GaN Heterostructures S. Marcinkevičius, V. Liuolia, KTH Royal Institute of Technology, Sweden; D.

Billingsley, M. Shatalov, J. Yang, R. Gaska, Sensor Electronic Technology, USA; M. S.

Shur, Rensselaer Polytechnic Institute, USA

Mo-P.23

Minority Carrier Recombination Mechanisms of Heavily Be-Doped InGaAsSb

C. M. Chang, S. Y. Wang, J.-I. Chyi, National Central University, Taiwan; W. T. Hsu,

W. H. Chang, National Chiao Tung University, Taiwan

Mo-P.24

Optical Investigation of Al-Rich AlGaN/AlGaN Quantum Wells by Time-Resolved

Photoluminescence

Jianping Zeng, Jianchang Yan, Junxi Wang, Peipei Cong, Wei Li, Weiying Wang, Peng,

Jin, Jinmin Li, Chinese Academy of Sciences, China

Mo-P.25

X-Ray Photoelectron Spectroscopy Measurements around the Valence-Band of Ga-

and N-face (0001)GaN

Yohei Sugiura, Daiki Tajimi, Ryosuke Amiya, Tomohiro Yamaguchi, Tohru Honda,

Kogakuin University, Japan

Mo-P.26

Atomic Imaging of Nucleation and Passivation of SiGe(100) and Ge(100) via H2O

and HOOH Dosing

Tobin Kaufman-Osborna, Kiarash Kiantajb, Joon Sung Leea,, Andrew C. Kummel,

University of California, San Diego, USA

Mo-P.27

Optical Constants of Type-II InAs/InAsSb Superlattices Measured using

Spectroscopic Ellipsometry

P. T. Webster, N. A. Riordan, H. Liang, S. R. Johnson, O. O. Cellek, E. H. Steenbergen,

X.-M. Shen, H. Li, S. Liu, D. Ding, Q. Zhang, D. J. Smith, Y.-H. Zhang, Arizona State

University, USA

Mo-P.28

Using SEM-EBIC FIB and STEM to Locate and Characterize Defects in Epitaxial

GaN

Michael E. Salmon, Chunzhi Jitty Gu, Gary R. Mount, James P. Vitarelli, Evans

Analytical Group, USA

30

Mo-P.29

Tensile Strain Induced Formation of Micro-Cracks around Surface Pits for

AlGaN/GaN Heterostructures

Junji Kotani, Shuichi Tomabechi, Toyoo Miyajima, Norikazu Nakamura, Toshihide

Kikkawa, Keiji Watanabe, Kenji Imanishi, Fujitsu Laboratories Ltd., Japan

Mo-P.30

The Critical Thickness of the 2D to 3D Transition of GaSb/GaAs Quantum Dots

Holger Eisele, Technische Universität Berlin, Germany

Mo-P.31

Improved Electrical Properties of Pressurized High Temperature Annealing of

Indium-Tin-Oxide and Its Application to Gas Sensor

Jieun Koo, Seunghwan Park, Woong Lee, Youngji Cho, Sangtae Lee, Jiho Chang,

National Korea Maritime University, Korea; Hyojong Lee, Dong-A University, Korea

Mo-P.32

Integration of LaLuO3 as High-κ Gate Dielectric into AlGaN/GaN MISHEMTs

Shu Yang, S. Huang, Kevin J. Chen, Hong Kong University of Science and Technology,

Hong Kong; M. Schnee, Q.-T. Zhao, J. Schubert, Peter Grünberg Institute, Germany

Mo-P.33

Impact of Native Defects in High-κ Dielectric Oxides on GaN/Oxide Metal-Oxide-

Semiconductor Devices

Minseok Choi, John L. Lyons, Anderson Janotti, Chris G. Van de Walle, University of


Mo-P.34

Ultrathin Graphene Nanoribbon Transistors on Wafer-Scale Chemical-Vapor-

Deposited Graphene

Wan Sik Hwang, Pei Zhao, Kristof Tahy, Huili (Grace) Xing, Alan C. Seabaugh,

Debdeep Jena, University of Notre Dame, USA; Xuesong Li, Chun-Yung Sung, IBM T.

J. Watson Research Center, USA

Mo-P.35

InGaAs HEMTs with T-Gate Electrodes Formed by Multi-Layer SiCN Molds

Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu, Tohoky

University, Japan

Mo-P.36

Improvement of the Electrical Properties of Al2O3 AlGaN/GaN MOSHFETs by

Gate-First Process

Eiji Miyazaki, Shigeru Kishimoto, Takashi Mizutani, Nagoya University, Japan

31

Mo-P.37

High Transconductance Ion-Implanted GaN MISFETs Using Atomic Layer

Deposited High- κ Dielectrics

S. Gu, A. Ohoka, K. Lee, W. Lu, P. M. Asbeck, University of California, San Diego,

USA; H. Katayose, K. Nomoto, T. Nakamura, Hosei University, Japan

Mo-P.38

Potential of GaInNAs for Its Application to Micro-fabrication Optical Devices

Hiroaki Goto, Fumitaro Ishikawa, Masato Morifuji, Masahiko Kondow, Osaka

University, Japan

Mo-P.39

Fast GaN based Schottky Diodes on Si(111) Substrate with Low Onset Voltage and

Strong Reverse Blocking

E. Bahat Treidel, O. Hilt, A. Wentzel, J. Würfl, G. Tränkle, Ferdinand-Braun-Institut

Leibniz-Institut für Höchstfrequenztechnik, Germany

Mo-P.40

Low Sheet Resistance N-Polar GaN High Electron Mobility Transistor Structures

with Strain Management for Scaled Designs

Man Hoi Wonga, James S. Speck, Umesh K. Mishra, University of California, Santa

Barbara, USA

Mo-P.41

InAs/GaSb Type-II Strained Layer Superlattice Material on 111 GaSb Substrates

for High Operating Temperature Detection

Elena Plis, Brianna Klein, Nutan Gautam, Sanjay Krishna, University of New Mexico,

USA

Mo-P.42

Nitrate-Selective Gallium Nitride Transistor-Based Ion Sensors with Low Detection

Limit

M. Myers, A. Podolska, T. Pope, F.M.L. Khir, B.D. Nener, M.V. Baker, The University

of Western Australia, Australia; U.K. Mishra, University of California, Santa Barbara,

USA

Mo-P.43

Femto-Second Electron Transit Time Characterization in GaN/AlGaN Quantum

Cascade Detector at 1.5 Micron

A Vardi, G. Bahir, Technion-Israel Institute of Technology, Israel; S. Sakr, J. Mangeney,

M. Tchernycheva, F. H. Julien, Université Paris-Sud XI, France; K.W. Kandaswamy, E.

Monroy, Equipe Mixte CEA-CNRS, France; S. E. Schacham, Ariel University Center,

Israel

32

Mo-P.44

Photoluminescence Peak Wavelength Behavior and Luminescent Efficiency of

InAs/InGaAsP/InP Quantum Dots Structure

Rie Sato, Ayako Fukuda, Tomomi Suzuki, and Hajime Imai; Faculty of Science, Japan

Women’s University, Toyko, Japan

Mo-P.45

Lattice Matched and Pseudomorphic InGaAs MOSHEMT with fT of 200GHz

Jiongjiong Mo; Institute of Electronics Microelectronics and Nanotechnology of Lille 1,

France

Mo-P.46

Monte Carlo Simulation of InGaAs/Strained-InAs/InGaAs Channel HEMTs

Considering Self-Consistent Analysis of 2-Dimensional Electron Gas

Akira Endoh, Issei Watanabe, and Takashi Mimura; National Institute of Information

and Communications Technology, Japan; Fujitsu Laboratories Ltd., Japan

Mo-P.47

Investigation of GaAs based MOVPE-grown AlxGa1-xAsyP1-y strain compensating

layers

A. Maassdorf, Anatol Lochmann, and M. Weyers; Ferdinand-Braun-Institut, Leibniz-

Institut fuer Hoechstfrequenztechnik Berlin, Germany; LayTec AG, Berlin, Germany

Mo-P.48

Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor with a

Nanoscale Oxidized GaAs Gate

Kuan-Wei Lee, Department of Electronic Engineering, I-Shou University, Taiwan,

R.O.C; Hsien-Cheng Lin, and Yeong-Her Wang; Institute of Microelectronics,

Department of Electrical Engineering, Advanced Optoelectronic Technology Center,

National Cheng-Kung University, Taiwan, R.O.C.

Mo-P.49

Source-Drain Scaling of Ion-Implanted InAs/AlSb HEMTs

Ginseppe Moschetti, Chalmers University of Technology, Goteborg, Sweden

Mo-P.50

Electro-Absorption Modulator Chirp Profile Influence on DEML Modulation

Scheme at 10 Gb/s

T. Anfray, C. Aupetit-Berthelemot, XLIM Dpt. C2S2 UMR CNRS 7252/University of

Limoges, Limoges, France; D. Erasme, K. Kechaou, Institut TELECOM, TELECOM

ParisTech, CNRS LTCI, Paris, France; G. Aubin, Laboratory for Photonics and

Nanostructures/CNRS, Marcoussis, France; C. Kazmiersky, III-V Lab, Marcoussis,

France; and P. Chanclou, Orange Labs, Lannion, France

33

Mo-P.51

Fabrication and DC characterization of InAs/AlSb Self-Switching Diodes

Andreas Westlund, Chalmers University of Technology, Gothenburg, Sweden

Mo-P.52

Effect of temperature on series resistance determination of Au/polyvinyl alcohol/n-

InP Schottky structures

M. Siva Pratap Reddy, Hee-Sung Kang, Dong-Seok Kim, Young-Woo Jo, Chul-Ho Won,

Ryun-Hwi Kim, Kyu-Il Jang, Chandrashekhar C.H, Jung-Hee Lee, School of Electrical

Engineering & Computer Science, Kyungpook National University, Daegu, Korea; and

V. Rajagopal Reddy, Department of Physics, Sri Venkateswara University, Tirupati,

India

Mo-P.53

Estimation of Effective Mass and Subbands in Multiquantum Wells using Polarized

Light Irradiation

K. Tanaka, N. Happo, M. Fujiwara, Hiroshima City University, Hiroshima, Japan; N.

Kotera, Kyushu Institute of Technology, Iizuka, Japan

Mo-P.54

Single-Event Transient Sensitivity to Gate Bias in InAlSb/InAs/AlGaSb High

Electron Mobility Transistors

V. Ramachandran, R. D. Schrimpf, and R. A. Reed, Department of Electrical Engineering

and Computer Science, Vanderbilt University, Nashville, USA

Mondy August 27

7:00 PM – 8:30 PM

Joint Rump Session

Room: Corwin Pavilion West

Organizer: Alan Seabaugh (University of Notre Dame)

The final embodiment of the MOSFET at technology nodes below 15 nm is unknown. Will the

channel remain Si, will it become III-V, will it morph into a tunnel FET? Are nanowires,

nanotubes, or 2D materials viable options? Are there alternatives beyond the transistor for low

power, high density computing applications? This panel will address these questions and discuss

the ultimate MOSFET and beyond.

(panelists to be confirmed)

34

Tuesday August 28

8:30 AM – 10:00 AM

Tu 1A: Photovoltaics Room: Corwin Pavilion West

Session Chair: Martin Walther, Fraunhofer Institute, Freiburg, Germany

8:30 Tu-1A.1

Optimization of Growth and Device Performance for InAs Quantum Dot Solar Cells

(Invited)

Seth M. Hubbard, Adam Podell, Chelsea Mackos, Steve Polly, David V. Forbes,

Rochester Institute of Technology, USA

9:00 Tu-1A.2

Patterned Core-Shell Nanopillar Photovoltaics Employing in Situ InGaP Surface

Passivation

Giacomo Mariani, Adam Scofield, Zhengliu Zhou, D. L. Huffaker, University of


9:15 Tu-1A.3

InP/AlInP Core-Multishell Nanowire Array Solar Cells

Masatoshi Yoshimura, EijiNakai, and Takashi Fukui, Hokkaido University, Japan;

Katsuhiro Tomioka, Japan Science and Technology Agency (JST)-PRESTO

9:30 Tu-1A.4

Hybrid Heterojunction Solar Cells Based on GaAs Nanopillar Arrays

M. A. Haddad, R. B. Laghumavarapu, D. L. Huffaker, University of California, Los

Angeles, USA; Liang Yan, Wei You, University of North Carolina, USA

9:45 Tu-1A.5

Temperature Dependence Photoreflectance Spectroscopy of InAs/GaAs Quantum

Dot Solar Cell S. S. Min, C. W. Sohn, I. S. Han, S. H. Lee, S. Jo Lee, Jong S. Kim, Yeungnam

University, Korea; S. K. Noh, Korea Research Institute of Standards and Science; Jin S.

Kim, Chonbuk National University, Korea; H. Choi, J. Y. Leem, Inje University, Korea

10:00 AM – 10:30 AM Coffee Break in Lagoon Plaza

35

Tuesday August 28

8:30 AM – 10:00 AM

Tu 1B: Nanostructures and Nitrides Room: Corwin Pavilion East

Session Chair: Erin Young, University of California, Santa Barbara, USA

8:30 Tu-1B.1

High Density Mobile Two-Dimensional Hole Gas at GaN/AlN Heterostructures

Grown by MBE

Guowang Li, Ronghua Wang, Jai Verma, Huili (Grace) Xing, Debdeep Jena, University

of Notre Dame, USA

8:45 Tu-1B.2

High Quality Strain-Compensated Multiple InAs/GaNAs Quantum Dot Layers

Grown by MBE

Hong Ye, Yuxin Song, Mahdad Sadeghi, Shumin Wang, Chalmers University of

Technology, Sweden; Yi Gu, Shanghai Institute of Microsystem and Information

Technology, Chinese Academy of Sciences, China

9:00 Tu-1B.3

Gas-Source Molecular Beam Epitaxy of GaP/GaNP Core/Shell Nanowires: Growth

Structure Analysis and Optical Properties

Y. J. Kuang, S. Sukrittanon, C. W. Tu, University of California, San Diego, USA

9:15 Tu-1B.4

NH3-Rich Growth of InGaN and InGaN/GaN Superlattices by NH3-Based

Molecular Beam Epitaxy

J. R. Lang, J.S. Speck, University of California, Santa Barbara, USA

9:30 Tu-1B.5

Electrical Properties of S Doped n-Type GaPN by Alternately N Supplied

Organometallic Vapor Phase Epitaxy

Y. Nagamoto, K. Matsuoka, H. Sekiguchi, H. Okada, A. Wakahara, Toyohashi

University of Technology, Japan

9:45 Tu-1B.6

Molecular Beam Epitaxial Growth of GaAsN Nanowire on Si(111) Substrate

Yoshiaki Araki, Fumitaro Ishikawa, Osaka University, Japan; Masahito Yamaguchi,

Nagoya University, Japan


36

Tuesday August 28

8:30 AM – 10:00 AM

Tu 1C: Graphene Devices and Characteristics Room: MultiCultural Center Theater

Session Chair: Tetsuya Suemitsu, Tohoku University, Japan

8:30 Tu-1C.1

Graphene Synthesis and Devices (Invited)

Xiangfeng Duan, University of California at Los Angels

9:00 Tu-1C.2

Investigation of Graphene-Oxide-Semiconductor Band Alignment by Internal

Photoemission Spectroscopy Rusen Yan, Qin Zhang, Wei Li, Irene Calizo, Curt Richter, Angela R. Hight-Walker,

David Gundlach, Nhan V. Nguyen, National Institute of Standards and Technology,

USA; Alan Seabaugh, Huili Grace Xing, University of Notre Dame, USA; Xuelei Liang,

Peking University, China; Tian Shen, Purdue University, USA

9:15 Tu-1C.3

THz Reconfigurable Optoelectronic Devices Employing Graphene

Berardi Sensale-Rodriguez, Rusen Yan, Mingda Zhu, Subrina Rafique, Suresh

Vishwanath, Michelle Kelly, WanSik Hwang, Kristof Tahy, Vladimir Protasenko, Lei

Liu, Debdeep Jena, Huili (Grace) Xing, University of Notre Dame, USA

9:30 Tu-1C.4

Metal/Semiconducting Selective Synthesis of Single-Walled Carbon Nanotubes for

FET Applications Shunsuke Sakurai, Kenji Hata, Collaborative Research Team Green Nanoelectronics

Center (GNC), AIST, Japan; Maho Yamada, Hiroko Nakamura, Don N. Futaba,

Nanotube Research Center, AIST, Japan

9:45 Tu-1C.5

Top-Gated Epi-Graphene Nanoribbon Field-Effect Transistors with Output

Current of 10 mA/µm

Wan Sik Hwang, Kristof Tahy, Pei Zhao, Soo Doo Chae, Huili (Grace) Xing, Alan

Seabaugh, Debdeep Jena, University of Notre Dame, USA; Luke O. Nyakiti, Virginia D.

Wheeler, Rachael. L. Myers-Ward, C. R. Eddy Jr., D. Kurt Gaskill, U. S. Naval Research

Laboratory, USA


37

Tuesday Aug. 28

8:30 AM – 10:00 AM

Tu 1D - Optical Nanodevices on Si Room: University Center Harbor Room

Session Chair:

8:30 Tu-1D.1

III-V Nanowires on Si for Optoelectronics and Solar Applications (Invited) Anna Fontcuberta I Morral, EPFL

9:00 Tu-1D.2

Selective Area Heteroepitaxy of InP Nanopyramidal Frusta on Si for Nanophotonics

W. Metaferia, J. Tommila , H. Kataria, C. Junesand, Y. Sun, M. Guina,T. Niemi and S.

Lourdudoss, Laboratory of Semiconductor Materials, Kista, Sweden

9:15 Tu-1D.3

Characteristics of InP nanoneedles Grown on Silicon by low-temperature MOCVD

K. Li, F. Ren, R. Chen, T. T. D. Tran, K. W. Ng, and C. J. Chang-Hasnain, Department

of Electrical Engineering and Computer Sciences, University of California at Berkeley,

Berkeley, California, USA

9:30 Tu-1D.4

Silicon-based long-wavelength III-V quantum-dot lasers (Invited)

Huiyun Lun , University College London


38

Tuesday Aug. 28

8:30 AM – 10:00 AM

Tu 1E - High Speed Diode Technologies Room: University Center State Street Room

Session Chair: Yasuyuki Miyamoto, Tokyo Institute of Technology, Japan

8:30 Tu-1E.1

High Efficiency and Broad-Band Operation of Monolithically Integrated W-Band

HBV Frequency Tripler

Aleksandra Malko, Tomas Bryllert, Josip Vukusic and Jan Stake, Chalmers University of

Technology, Gothenburg, Sweden

8:45 Tu-1E.2

Lattice-Matched p+-GaAsSb/i-InAlAs/n-InGaAs Zero-Bias Backward Diodes for

Millimeter-Wave Detectors and Mixers

T. Takahashi, M. Sato, Y. Nakasha, and N. Hara, Fujitsu Laboratories Limited, Japan

9:00 Tu-1E.3

A W-Band InGaAs PIN-MMIC Digital Phase-Shifter Using the Switched

Transmission-Line Structure

J. G. Yang, J. Lee and K. Yang, Department of Electrical Engineering, Korea Advanced

Institute of Science and Technology, Daejeon, Republic of Korea

9:15 Tu-1E.4

Development of a 557 GHz GaAs Monolithic Membrane-Diode Mixer

H. Zhao, V. Drakinsky, P. Sobis, J. Hanning, A. Y. Tang, J. Stake, GigaHertz Center,

Department of Microtechnology and Nanoscience, Chalmers University of Technology,

Sweden

9:30 Tu-1E.5

Fundamental Oscillation up to 1.31 THz in Thin-Well Resonant Tunneling Diodes

H. Kanaya, H. Shibayama, S. Suzuki, and M. Asada, Interdisciplinary Graduate School of

Science and Technology, Tokyo Institute of Technology, Tokyo, Japan

9:45 Tu-1E.6

Design and Fabrication of InGaAs Photodiodes for SWIR Imagers with Low Dark

Current A. Djedidi, A. Rouvie, JL.Reverchon, M. Pires, N. Chevalier, D. Mariolle, N. Gambacorti, H.J.

Drouhin, III-V Lab, Palaiseau Cedex, France


39

Tuesday August 28

10:30 AM – 12:00 PM

Tu 2A: Infrared Sensors Room: Corwin Pavilion West

Session Chair: Elena Plis, University of New Mexico, Albuquerque, USA

10:30 Tu-2A.1

InN Based Chemical Sensor (Invited)

J. Andrew Yeh, Taiwan University, Taiwan

11:00 Tu-2A.2

Photovoltaic Operation of Quantum Dot Quantum Cascade Infrared Photodetector

A.V. Barve, S. Krishna, University of New Mexico, USA

11:15 Tu-2A.3

Multicolor Broad Band (5-20 µm) InAs/GaAs Quantum Dot Infrared Photodetector

with Ultra-High (7.7 A/W) Responsivity Sourav Adhikary, Subhananda Chakrabarti, Indian Institute of Technology, India; A. G.

U. Perera, Yigit Aytac, Georgia State University, USA

11:30 Tu-2A.4

InAsSb Nanowires for Long Wavelength Infrared Detectors

Johannes Svensson, B. Mattias Borg, Lars-Erik Wernersson, Kimberly A. Dick, Lund

University, Sweden

11:45 Tu-2A.5

InGaAsSb/AlInGaAsSb Laterally-Coupled Index-Grating Distributed Feedback

Laser Diodes for Hydrocarbon Detection Near 3.3µm - CANCELLED

J.A. Gupta, A. Bezinger, P.J. Barrios, J. Lapointe, D. Poitras, P. Waldron, National

Research Council of Canada, Canada

12:00 PM – 1:30 PM Lunch Break in Lagoon Plaza

40

Tuesday August 28

10:30 AM – 12:00 PM

Tu 2B: Nanowire Epitaxy Room: Corwin Pavilion East

Session Chair: Kerstin Volz, Philipps-University Marburg, Germany

10:30 Tu-2B.1

Growth and Characterization of InAs/AlxIn1-xAs(P) Nanowires by Gas Source

Molecular Beam Epitaxy

C. M. Haapamaki, R. R. LaPierre, McMaster University, Canada; J. Baugh, University of

Waterloo, Canada

11:00 Tu-2B.2

InAs/InP Nanopillar Heterostructures by Selective-Area Epitaxy

Andrew Lin, Joshua Shapiro, Adam Scofield, Baolai Liang, D. L. Huffaker, University of


11:15 Tu-2B.3

Controlled n- and p-Type Doping of GaAs Nanowires

O. Salehzadeh, K. L. Kavanagh, S. P. Watkins, Simon Fraser University, Canada

11:30 Tu-2B.4

Sub-Micron Growth of InGaAs/GaAs Core-Shell Pillars on Silicon

Kar Wei Ng, Wai Son Ko, Thai-Truong D. Tran, Roger Chen, Fanglu Lu, Connie J.

Chang-Hasnain, University of California, Berkeley, USA; Maxim V. Nazarenko,

Vladimir G. Dubrovskii, St Petersburg Academic University, Russia; Martin Kamp,

Alfred Forchel, University of Würzburg, Germany

11:45 Tu-2B.5

Wafer-Scale InGaAs Nanowire Epitaxy on Si and Graphene Substrates

Parsian Mohseni, Jae Cheol Shin, Xiuling Li, University of Illinois, USA

12:00 PM – 1:30 PM Lunch Break in Lagoon Plaza

41

Tuesday August 28

10:30 AM – 12:00 PM

Tu 2C: Oxides Room: MultiCultural Center Theater

Session Chair: James Speck, University of California, Santa Barbara, USA

10:30 Tu-2C.1

Single-crystal gallium oxide metal-semiconductor field-effect transistors (Invited)

Masataka Higashiwaki, Kohei Sasaki, National Institute of Information and

Communications Technology, Japan; Akito Kuramata, Shigenobu Yamakoshi, Tamura

Corporation, Japan; Takekazu Masui, Koha Co., Ltd., Japan

11:00 Tu-2C.2

Mist Chemical Vapor Deposition of Gamma-Phase Ga2O3 Thin Films

Takayoshi Oshima, Taishi Nakazono, Akira Mukai, Tokyo Institute of Technology,

Japan; Akira Ohtomo, ALCA, Japan Science and Technology Agency, Japan

11:15 Tu-2C.3

Room Temperature Ferromagnetism in Highly Crystalline Alpha-(GaFe)2O3 Thin

Films

Kentaro Kaneko, Shizuo Fujita, Kyoto University, Japan

11:30 Tu-2C.4

Synthesis of Al-O-N Ceramic Materials for UV Emitting Devices

Yujin Cho, Jiho Chang, National Korea Maritime University, Korea; Takashi Sekiguchi,

Benjamin Dierre, Takashi Takeda, Naoto Hirosaki, Woong Lee, National Institute for

Material Science, Japan

11:45 Tu-2C.5

Enhancement Mode AlInGaN/GaN MISHFETs with Plasma-Oxidised AlOx/TiOx as

Gate Insulator

H. Hahn, H. Behmenburg, N. Ketteniss, H. Kalisch, A. Vescan, RWTH Aachen

University, Germany; M. Heuken, AIXTRON SE, Germany

12:00 PM – 1:30 PM Lunch Break in Storke Plaza

42

Tuesday Aug. 28

10:30 AM – 12:00 PM

Tu 2D - Optical Components Room: University Center Harbor Room

Session Chair: Kent Choquette, University of Illinois, Urbana, USA

10:30 Tu-2D.1

Integrated Optoelectronic Components for the Transmission and Reception of

Polarization- and Phase-Coded Optical Signals (Invited)

Andreas Umbach, U2T

11:00 Tu-2D.2

40 Gbit/s identical layer InGaAlAs-MQW electroabsorption-modulated DFB-lasers

operating between 1298 nm and 1311 nm

C. Bornholdt, H. Klein, G. Przyrembel, A. Sigmund, W. D. Molzowa, and M. Moehrle,

Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute, Berlin, Germany

11:15 Tu-2D.3

Reflective Amplified Modulator Operating at 40 Gb/s up to 85ÂºC as Colorless

Transceiver for Optical Access Networks

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau3 and C. Kazmierski, G.

Aubin and K. Merghem, Eindhoven University of Technology, Eindhoven, the

Netherlands

11:30 Tu-2D.4

InP Photonic Integrated Circuit with an AWG-like design for Optical Beam

Steering

Weihua Guo, ECE Department, Santa Barbara, California, USA

11:45 Tu-2D.5

Design Fabrication and Preliminary Test Results of a New InGaAsP/InP High-Q

Ring Resonator for Gyro Applications

F. Dell’Olio, C. Ciminelli, M.N. Armenise, F. M. Soares, W. Rehbein, Optoelectronics

Laboratory, Politecnico di Bari, Bari, Italy


43

Tuesday Aug. 28

10:30 AM – 12:00 PM

Tu 2E - Heterogeneous Integration Room: University Center State Street Room

Session Chair: Minjoo Lee, Yale University, USA

10:30 Tu-2E.1

Double-Layer Stepped Si(100) for III-V-on-Silicon Integration

H. D scher, P. Kleinschmidt, S. Br ckner, O. Supplie, A. Dobrich, and T. Hannappel,

Helmholtz- entrum Berlin f r Materialien und Energie, Berlin, Germany

10:45 Tu-2E.2

Atomic-Plane-Thick Reconstruction Across the Interface During Heteroepitaxial

Bonding of InP-Clad Quantum Wells to Si

A. Talneau, C. Roblin, A. Itawi, O. Mauguin, L. Largeau, G. Beaudouin, I. Sagnes and G.

Patriarche, Laboratoire de Photonique et de Nanostructures, Marcoussis, France

11:00 Tu-2E.3

Lattice Engineered Substrates (Invited) Eugene Fitzgerald, MIT

11:30 Tu-2E.4

Electrical Conduction Property at InAs/Si(111) Interface by Selective-Area MOVPE

S. Watanabe, K. Watanabe, A. Higo, M. Sugiyama, Y. Nakano, School of Eng, The

University of Tokyo, Tokyo, Japan

11:45 Tu-2E.5

Interface and Surface Dielectric Anisotropies of GaP/Si(100)

O. Supplie, T. Hannappel, M. Pristovsek, and H. D scher, Helmholtz- entrum Berlin f r

Materialien und Energie, Institut f r Solare Brennstoffe und Energiespeichermaterialien,

Berlin, Germany


44

Tuesday August 28

1:30 PM – 3:00 PM

Tu 3A: Optoelectronics and Photovoltaics Room: Corwin Pavilion West

Session Chair: Sanjay Krishna, University of New Mexico, Albuquerque, USA

1:30 Tu-3A.1

Flexible Optoelectronics (Invited) Elvira Fortunato, New University of Lisbon, Portugal

2:00 Tu-3A.2

Structural and Optical Properties of InAs/ AlAsSbSelf-Assembled Quantum Dots

for Intermediate Band Solar Cells

M. Sun, R. B. Laghumavarapu, A. Lin, D. L. Huffaker, University of California, Los

Angeles, USA; P. J. Simmonds, B. Liang, California NanoSystems Institute, USA

2:15 Tu-3A.3

Efficiency Enhancement in Solid Dye-Sensitized Solar Cell by Three-Dimensional

Photonic Crystal

Dae-Kue Hwang, Dae-Hwan Kim, Daegu-Gyeongbuk Institute of Science and

Technology, Korea; Byunghong Lee, Robert. P. H. Chang, Northwestern University,

USA

2:30 Tu-3A.4

Carrier Escape Mechanism Dependence on Barrier Thickness and Temperature in

InGaN Quantum Well Solar Cells

J. R. Lang, N. G. Young, R. M. Farrell, J. S. Speck, University of California, Santa

Barbara, USA; Y.-R. Wu, National Taiwan University, Taiwan

2:45 Tu-3A.5

GaAs/AlAs Superlattice Solar-Cell with X-Electron Conduction

Atsushi Kawaharazuka, Waseda University, Japan


45

Tuesday August 28

1:30 PM – 3:00 PM

Tu 3B: Power Electronics Room: Corwin Pavilion East

Session Chair: Paul Saunier, Triquint Semiconductor Inc., USA

1:30 Tu-3B.1

The Role of Microsystems for a Clean Energy Future (Invited)

Rajeev Ram, Advanced Research Projects Agency – Energy (ARPA-E)

2:00 Tu-3B.2

>1200 volt GaN-on-Silicon Schottky Diode

T. Boles, C. Varmazis, D. Carlson, M/ACOM Technology Solutions, USA; T. Palacios,

G. W. Turner, R. J. Molnar, Massachusetts Institute of Technology, USA

2:15 Tu-3B.3

GaN-Based High Voltage Transistors for Efficient Power Switching

P. Waltereit, R. Reiner, H. Czap, D. Peschel, S. Müller, R. Quay, M. Mikulla, O.

Ambacher

Fraunhofer Institute for Applied Solid State Physics, Germany

2:30 Tu-3B.4

Over 550 V Breakdown Voltage of InAlN/GaN HEMT on Si

H. Saito, Y. Takada, M. Kuraguchi, M. Yumoto, K. Tsuda, Toshiba Corporation, Japan

2:45 Tu-3B.5

Low ON-Resitance CAVETS with Ammonia MBE Regrown Active p-GaN Layer as

the Current Blocking Layer

Ramya Yeluri, Srabanti Chowdhury, Christophe A. Hurni, James S. Speck, Umesh K.

Mishra, University of California, Santa Barbara, USA


46

Tuesday August 28

1:30 PM – 3:00 PM

Tu 3C: Spin and Transport Room: MultiCultural Center Theater

Session Chair: Mark Sherwin, University of California, Santa Barbara, USA

1:30 Tu-3C.1

Spin Logic and Spin Communications (Invited)

Hanan Dery, Yang Song, Pengke Li, University of Rochester, USA; Igor Zutic, State

University of New York, USA

2:00 Tu-3C.2

Effect of Gate Dielectric on Transport Properties of InSb Two-Dimensional

Electron Gas

M. M. Uddin, Y. Hirayama, Tohoku University, Japan; K. F. Yang, K. Nagase, ERATO

Nuclear Spin Electrsonics Project, Japan; H. W. Liu, Jilin University, People’s Republic

of China; T. D. Mishima, M. B. Santos, University of Oklahoma, USA

2:15 Tu-3C.3

High-Order Sideband Generation from Electron-Hole Recollisions

B. Zaks, H. Banks, M. S. Sherwin, University of California, Santa Barbara, USA; R. B.

Liu, The Chinese University of Hong Kong, China

2:30 Tu-3C.4

Electronic Transport Properties in Vertically Coupled Quantum Point Contacts

S. Ichinokura, W. Izumida, Y. Hirayama, Tohoku University, Japan; T. Hatano, K.

Nagase, JST-ERATO, Japan

2:45 Tu-3C.5

Boundary-Enhanced Momentum Relaxation of Longitudinal Optical Phonons in

GaN - CANCELLED

N. Ma, B. Shen, L. W. Lu, F. J. Xu, L. Guo, X. Q. Wang, F. Lin, Peking University,

China; Z. H. Feng, S. B. Dun, B. Liu, Hebei Semiconductor Research Institute, China


47

Tuesday Aug. 28

1:30 PM – 3:00 PM

Tu 3D - Lasers I Room: University Center Harbor Room

Session Chair: Keith Williams, Naval Research Laboratory, USA

1:30 Tu-3D.1

Ultralow-power Nanophotonic Devices Based on Buried-Heterostructure Photonic-

Crystal Nanocavities (Invited)

Masaya Notomi, NTT

2:00 Tu-3D.2

Metal-Clad Photonic Crystal Membrane Nanolasers

Joshua D. Sulkin and Kent D. Choquette, Department of Electrical and Computer

Engineering University of Illinois, Urbana, IL, USA

2:15 Tu-3D.3

10-Gbit/s Direct Modulation of Optically Pumped InGaAlAs Multiple-Quantum-

Well Photonic-Crystal Nanocavity Laser up to 100C

T. Sato, K. Takeda, H. Imai, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, W.

Kobayashi, T. Kakitsuka, M. Notomi, and S. Matsuo, NTT Photonics Labs, NTT

Corporation, Japan

2:30 Tu-3D.4

Multi-Stack Quantum Cascade Laser (Invited)

Romain Blanchard, Harvard University


48

Tuesday Aug. 28

1:30 PM – 3:00 PM

Tu 3E - III-V MOS Room: University Center State Street Room

Session Chair: Erik Lind, Lund University, Sweden

1:30 Tu-3E.1

Design of High-Current L-Valley GaAs/AlAs0.56Sb0.44/InP (111)Ultra-Thin-Body

nMOSFETs

S. Mehrotra, M. Povolotskyi, J. Law, T. Kubis, G. Klimeck, and M. Rodwelly, Network

for Computational Nanotechnology, Purdue University, West Lafayette, IN, USA

1:45 Tu-3E.2

High Performance Substitutional-Gate MOSFETs Using MBE Source-Drain

Regrowth and Scaled Gate Oxides

S. Lee, A. D. Carter, J. J. M. Law, D. C. Elias, V. Chobpattana, H. Lu, B. J. Thibeault,

W. Mitchell, S. Stemmer, A. C. Gossard, and M. J. W. Rodwell, Department of Electrical

and Computer Engineering, University of California,

Santa Barbara, CA, USA

2:00 Tu-3E.3

Epitaxy of III-V based channels on Si and transistor integration for 12nm node

CMOS (Invited)

Matty Caymax, IMEC

2:30 Tu-3E.4

Novel Atomic Layer Deposited Thin Film Beryllium Oxide for InGaAs MOS

Devices

D. Koh, J. H. Yum, T. Akyol1, D. A. Ferrer, M. Lei, T. W. Hudnall, M. C. Downer, C.

W. Bielawski, R.Hill, G. Bersuker and S. K. Banerjee, Microelectronics Research Center,

Department of Electrical and Computer Engineering, The University of Texas at Austin,

Austin, Texas, USA

2:45 Tu-3E.5

Sulfur Cleaning for (100) (111)A and (111)B InGaAs Surfaces with In Content of

0.70 and their Al2O3/InGaAs MOS Interface Properties

M. Yokoyama, O. Ichikawa, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y.

Nakano, M. Takenaka, and S. Takagi, The University of Tokyo, Tokyo, Japan


49

Tuesday Aug. 28

3:30 PM – 5:00 PM

Tu 4A - Late News Room: Corwin Pavilion

Session Chair: Diana Huffaker, University of California Los Angels, USA

Miguel Murteaga, Teledyne Scientific, Thousand Oaks, California, USA

Tuesday Aug. 28

5:00 PM – 5:45 PM

Compound Semiconductor Week Award Ceremony Room: Corwin Pavilion

The International Symposium for Compound Semiconductors will present four prestigious

awards. The awards to be made at ISCS 2012 are:

The Welker Award

The Quantum Device Award

The Young Scientist Award

The Best Student Paper Award

The Indium Phosphide and Related Materials Conference will present the IPRM 2012 Award.

Tuesday Aug. 28

5:00 PM – 6:30 PM

Exhibitor Reception Room: Lagoon Plaza

50

Wednesday August 29

8:30 AM – 10:00 AM

We 1A: Alloys and Heterostructures Room: Corwin Pavilion West

Session Chair: Subhananda Chakrabarti, Indian Institute of Technology, Bombay, India

8:30 We-1A.1

Growth and Optical Properties of High Bi Content GaAsBi Alloys (Invited)

R.B. Lewis, V. Bahrami-Yekta, M. Masnadi-Shirazi, T. Tiedje, University of Victoria, Canada

9:00 We-1A.2

The Molecular Beam Epitaxial Growth-Space of InAsBi and InGaAsBi on InAs

S. J. Maddox, H. P. Nair, V. D. Dasika, E. M. Krivoy, R. Salas, S. R. Bank, The

University of Texas at Austin, USA

9:15 We-1A.3

Quantitative Structure of the GaP/Si (001) Interface Grown by MOVPE

Andreas Beyer, Benedikt Haas, Kakhaber Jandieri, Wolfgang Stolz, Kerstin Volz

Philipps-Universität Marburg, Marburg, Germany

9:30 We-1A.4

Molecular Beam Epitaxy of Dilute Nitride Solar Cells (Invited) M. Guina, A. Tukiainen, A. Aho, V. Polojarvi, V.-M. Korpijarvi, J. Salmo, Tampere

University of Technology, Finland


51

Wednesday August 29

8:30 AM – 10:00 AM

We 1B: Theory and Simulation Room: Corwin Pavilion East

Session Chair: Jürgen Christen, Otto-von-Guericke-University, Germany

8:30 We-1B.1

Theory of Quasi-Localized States and Resonant Scattering of Charge Carriers in

Dilute Nitride Semiconductors (Invited)

Stephen Fahy, University College Cork, Ireland

9:00 We-1B.2

An Accuate Interband Tunneling Model InAs/GaSb Heterostructure Devices

Md. Itrat Bin Shams, Yi Xie, Yeqing Lu, Patrick Fay, University of Notre Dame, USA

9:15 We-1B.3

GaN/AlN QDs: Modeling Exciton-Biexciton Crossover and Strong Polar Exciton-

LO Phonon Interaction

G. Hönig, J. Settke, G. Callsen, J. Brunnmeier, A. Hoffmann, C. Thomsen, A. Schliwa,

Technschische Universität Berlin, Germany

9:30 We-1B.4

Systematic Theoretical Investigations for the Polytypism in SiC

Tomonori Ito, Toru Akiyama, Kohji Nakamura, Mie University, Japan

9:45 We-1B.5

Modeling of Sb-Heterostructure Backward Diode for Millimeter- and

Submillimeter-Wave Detection

Parisa Yadranjee Aghdam, Huan Zhao, Chalmers University of Technology, Sweden


52

Wednesday August 29

8:30 AM – 10:00 AM

We 1C: Sensors: Noise and Bandwidth Room: MultiCultural Theater

Session Chair: Pradeep Senanayake, University of California, Los Angeles

8:30 We-1C.1

Development of Very Low Noise High Gain InAs Avalanche Photodiodes (Invited)

J. P. R. David, C. H. Tan, University of Sheffield, UK

9:00 We-1C.2

Exploiting the Characteristics of InAs Electron Avalanche Photodiodes for

Unlimited Gain-Bandwidth Product

Pin Jern Ker, A. B. Krysa, John P. R. David, Chee Hing Tan, University of Sheffield,

UK; Andrew R. J. Marshall, Lancaster University, UK

9:15 We-1C.3

MOVPE Grown Photodiodes in the 2.5 μm Region with InGaAs/GaAsSb Type-II

Quantum Wells

K. Fujii, T. Ishizuka, Y. Nagai, Y.Iguchi, K. Akita, Sumitomo Electric Industries, Ltd.,

Japan

9:30 We-1C.4

Noise Characterization of Mid-Infrared InAs/GaSb Superlattice Photodiodes

A. Wörl, P. Kleinow, R. Rehma, J. Schmitz, M. Walther, Fraunhofer-Institut für

Angewandte Festkörperphysik (IAF), Germany

9:45 We-1C.5

High Bandwidth GaSb Photodiodes for 1.55 μm Communications on GaAs

Substrates Using an Interfacial Misfit Array A. R. J. Marshall, A. P. Craig, Lancaster University, UK; C. J. Reyner, G. Mariani, K.L.

Wang, University of California, Los Angeles, USA; K. Nunna, B. L. Liang, D. L.

Huffaker, California NanoSystems Institute, Los Angeles, USA


53

Wednesday Aug. 29

8:30 AM – 10:00 AM

We 1D - QD Lasers and Technology Room: University Center Harbor Room

Session Chair: Ikou Suemune, Hokkaido University, Japan

8:30 We-1D.1

Recent Advances in High-Speed Lasers and Amplifiers Based on 1.5 um QD/QDash

Material (Invited)

J.P. Reithmaier, University of Kassel

9:00 We-1D.2

1550nm InAs/InP Quantum Dash Based Directly Modulated Lasers for Next

Generation Passive Optical Network

N. Chimot, S. Joshi, G. Aubin, K. Merghem, S. Barbet, A. Accard, A. Ramdane and F.

Lelarge, III-V Lab, a joint Laboratory of "Alcatel Lucent Bell Labs", "Thales Research &

Technology" and CEALETI, Marcoussis, France

9:15 We-1D.3

20 GHz to 83 GHz Single Section InAs/InP Quantum Dot Mode-Locked Lasers

Grown on (001) Misoriented Substrate

K. Klaime, R. Piron, C. Paranthoen, T. Batte, F. Grillot, O. Dehaese, S. Loualiche, A. Le

Corre, R. Rosales, K. Merghem, A. Martinez and A. Ramdane, UEB INSA-RENNES,

CNRS UMR6082 Foton, France

9:30 We-1D.4

InAs/InP Quantum Dash Based Mode Locked Lasers for 60 GHz Radio over Fiber

Applications

R. Rosales, B. Charbonnier, K. Merghem, F. Van Dijk, F. Lelarge, A. Martinez & A.

Ramdane, CNRS, Laboratory for Photonics and Nanostructures, Marcoussis, France

9:45 We-1D.5

MOVPE Growth of Ga(AsBi)/GaAs Quantum Well Structures

P. Ludewig, N. Knaub, W. Stolz, K. Volz, Philipps-Universität Marburg, Materials

Science Center and Faculty of Physics, Marburg, Germany


54

Wednesday Aug. 29

8:30 AM – 10:00 AM

We 1E - HBTs Room: University Center State Street Room

Session Chair: Tom Low, Agilent Technologies, USA

8:30 We-1E.1

InP HBT with 55-nm-wide Emitter and Relationship between Emitter Width and

Current Density

K. Tanaka, and Y. Miyamoto, Department of Physical Electronics, Tokyo Institute of

Technology, Tokyo, Japan

8:45 We-1E.2

InP/GaInAs DHBT with TiW Emitter Demonstrating fT/fmax ~340/400GHz for 100

Gb/s Circuit Applications

V. Nodjiadjim, S. Cros-Chahrour, J-Y. Dupuy, M. Riet, P. Berdaguer, J-L Gentner, B.

Saturnin, J. Godin, III-V Lab (Bell Labs, TRT and CEA/LETI joint Lab), Marcoussis,

France

9:00 We-1E.3

Lower Limits to Specific Contact Resistivity

A. Baraskar, A. C. Gossard, M. J. W. Rodwell, Global Foundries, Yorktown Heights,

NY, USA

9:15 We-1E.4

Study of the NiGaInAs Alloy as an Ohmic Contact to the p-type Base of InP/GaInAs

HBTs

Shlomo Mehari, Technion - Israel Institute of Technology, Haifa, Israel

9:30 We-1E.5

Multi-finger 250nm InP HBTs for 220GHz mm-Wave Power

Z. Griffith, M. Urteaga, P. Rowell, R. Pierson, and M. Field

Teledyne Scientific Company, Thousand Oaks, CA, USA

9:45 We-1E.6

Analysis of InP/GaAsSb DHBT Failure Mechanisms Under Accelerated Aging Tests

G.A. Koné, C. Maneux, N. Labat, T. Zimmer, B. Grandchamp and H. Maher, IMS,

Université Bordeaux 1, Talence, France


55

Wednesday August 29

10:30 AM – 12:00 PM

We 2A: Modulators and Resonators Room: Corwin Pavilion West

Session Chair: François Lelarge, Alcatel - Thales III-V Lab, Marcoussis, France

10:30 We-2A.1

Intradot Dynamics of InAs/GaAs Quantum Dot Based Electroabsorbers (Invited)

Guillaume Huyet, Tyndall National Institute, Ireland

11:00 We-2A.2

Parametric Mode-Mixing in Structurally-Coupled Mechanical Resonators

Hiroshi Yamaguchi, Hajime Okamoto, Imran Mahboob, Nippon Telegraph and

Telephone Corporation, Japan

11:15 We-2A.3

Ultra-broadband Wavelength Tuning Range of Quantum Dot Comb Laser

Fabricated Using Structure Modulation Growth Technique

Yuki Yoshioka, Naokatsu Yamamoto, Kouichi Akahane, Tetsuya Kawanishi, National

Institute of Information and Communications Technology (NICT), Japan; Hiroshi Takai,

Tokyo Denki University, Japan; Hideyuki Sotobayashi, Aoyama Gakuin University,

Japan

11:30 We-2A.4

Self-Pulsating Multi-Section InGaN Laser Diode

L. Sulmoni, J.-M. Lamy, J.-F. Carlin, N. Grandjean, Ecole Polytechnique Fédérale de

Lausanne (EPFL), ICMP, Switzerland; X. Zeng, D. L. Boïko, Centre Suisse

d’Electronique et de Microtechnique (CSEM) SA, Switzerland

11:45 We-2A.5

Electro-Optic Modulators by Using Spatially-Ordered InGaAs Quantum Dot

Chains

Baolai Liang, Wei Liu, Harold Fetterman, Diana Huffaker, University of California, Los

Angeles, USA


56

Wednesday August 29

10:30 AM – 12:00 PM

We 2B: Characterization I Room: Corwin Pavilion East

Session Chair: Matteo Meneghini, University of Padova, Italy

10:30 We-2B.1

Comparison of GaAs/GaSb(001) and GaSb/GaAs(001) Nanostructures at the

Atomic Scale (Invited)

A. Lenz, H. Eisele, J. Schuppang, M. Dähne , Technschische Universität Berlin,

Germany; A. Gassenq, T. Talierco, E. Tournié, Université Montpellier 2, France

11:00 We-2B.2

Spatio-Time-Resolved Cathodoluminescence Study Using a Femtosecond Focused

Electron Beam on Freestanding GaN Substrates Grown by Hydride Vapor Phase

Epitaxy

S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, Tohoku University,

Japan; S. Nagao, K. Fujito, Mitsubishi Chemical Corporation, Japan; A. Uedono,

University of Tsukuba, Japan

11:15 We-2B.3

Cathodoluminescence Investigations of Single GaN Quantum Dots Directly

Performed in a Scanning Transmission Electron Microscope

F. Bertram, G. Schmidt, M. Müller, P. Veit, J. Christen, Otto-von-Guericke-University

Magdeburg, Germany; E. Monroy, CEA-Grenoble, France

11:30 We-2B.4

Growth Process and Morphology of Three-Dimensional GaSb Islands on Ga/Si(111)

Shinsuke Hara, Ryuto Machida, Keisuke Yoshiki, Katsumi Irokawa, Hirofumi Miki,

Hiroki I. Fujishiro, Tokyo University of Science, Japan; Akira Kawazu, Tokyo Denki

University, Japan

11:45 We-2B.5

Characterization Individual Near Surface N-Atoms in Diluted Ga(As,N) by Cross-

Sectional Scanning Tunneling Microscopy

V. Vossebuerger, K. Jandieri, W. Stolz, K. Volz, Philipps University Marburg, Germany;

A. Lenz, H. Eisele, Technschische Universität Berlin, Germany


57

Wednesday August 29

10:30 AM – 12:00 PM

We 2C: Quantum Effects in Nanostructures Room: MultiCultural Theater

Session Chair: Yoshiro Hirayama, Tohoku University, Sendai, Japan

10:30 We-2C.1

Room-Temperature Polariton Parametric Scattering Driven by Polariton

Condensate in a One-Dimensional ZnO Microcavity (Invited)

Wei Xie, Hongxing Dong, Saifeng Zhang, Liaoxin Sun, Zhanghai Chen, Fudan

University, China

11:00 We-2C.2

General Photon Autocorrelation Function Including Carrier Repopulation Process

in Single-Photon Emitters

Hideaki Nakajima, Hidekazu Kumano, Ikuo Suemune, Hokkaido University, Japan

11:15 We-2C.3

Engineering Surface Plasmon Absorption for High Efficiency Nanopillar

Photodetectors Pradeep Senanayake, Chung-Hong Hung, Joshua Shapiro, Andrew Lin, Baolai Liang,

Benjamin S. Williams, D. L. Huffaker, University of California, Los Angeles, USA

11:30 We-2C.4

Single Photon Emission and Detection with Quantum Dots in Nanowire Devices

Gabriele Bulgarini, Michael E. Reimer, Erik P.A.M. Bakkers, Leo P. Kouwenhoven, Val

Zwiller, Delft University of Technology, The Netherlands

11:45 We-2C.5

Plasmonic Nanolaser Using Epitaxially Grown Silver Film

Yu-Jung Lu, Hung-Ying Chen, Chun-Yuan Wang, Ming-Yen Lu, Juann Chen, Shangjr

Gwo, National Tsing-Hua University, Taiwan; Jisun Kim, Chihhui Wu, Nima Dabidian,

Charlotte E. Sanders, Lih- Gennady Shvets, Chih-Kang Shih, The University of Texas at

Austin, USA; Bo-Hong Li, Xianggang Qiu, Chinese Academy of Sciences, China; Wen-

Hao Chang, National Chiao-Tung University, Taiwan


58

Wednesday Aug. 29

10:30 AM – 12:00 PM

We 2D - Photodiodes Room: University Center Harbor Room

Session Chair: Andreas Beling, University of Virginia, USA

10:30 We-2D.1

Microwave Photonics (Invited)

Keith Williams, NRL

11:00 We-2D.2

Lateral Scalability of Inverted p-down InAlAs/InGaAs Avalanche Photodiode

M. Nada, H. Yokoyama, Y. Muramoto, T. Ishibashi and S. Kodama, NTT Photonics

Laboratories, NTT Corporation 3-1, Atsugi City, Japan

11:15 We-2D.3

Phase Characterization of Intermodulation Distortion in High-Linearity

Photodiodes

Y. Fu, H. Pan, A. Beling, J. Campbell, Department of Electrical Engineering, University

of Virginia, Charlottesville, VA, USA

11:30 We-2D.4

High speed AlInGaAs Quantum Well Waveguide Photodiode for Wavelengths

Around 2 microns

H. Yang, N. Ye, A. Gocalinska, M. Manganaro, K. Thomas, E. Pelucchi, B. Roycroft, F.

Peters and B. Corbett, Tyndall National Institute, Cork, Ireland

11:45 We-2D.5

MOCVD Based Zinc Diffusion Process for Planar InP/InGaAs Avalanche

Photodiode Fabrication

Oliver J. Pitts, National Research Council Canada, Ottawa, Ontario, Canada


59

Wednesday Aug. 29

10:30 AM – 12:00 PM

We 2E- HEMT Technologies Room: University Center State Street Room

Session Chair: Gerry Mei, Northrup Grumman, USA

10:30 We-2E.1

450 GHz Amplifier MMIC in 50 nm Metamorphic HEMT Technology

A. Leuther, A. Tessmann, H. Massler, R. Aidam, M. Schlechtweg, O. Ambacher,

Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany

10:45 We-2E.2

100nm-Gate InAlAs/InGaAs HEMTs on Plastic Flexible Substrate with High Cut-

Off Frequencies

Jinshan. Shi, N. Wichmann, Y. Roelens and S. Bollaert, Institute of Electronics,

Microelectronics and Nanotechnology Technology, University of Lille, Villeneuve

d’Ascq, France

11:00 We-2E.3

High Electron Mobility InAs-Based Heterostructure on Exact (001) Si Using

GaSb/GaP Accommodation Layer

L. Desplanque, S. El Kazzi, C. Coinon, S. Ziegler , B. Kunert, A. Beyer, K. Volz, W.

Stolz, Y.Wang, P.Ruterana and X.Wallart, Institute of Electronics, Microelectronics and

Nanottechnology, CNRS and University of Lille, Villeneuve d’Ascq, France

11:15 We-2E.4

Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo

Simulation

J. Sato, Y. Nagai, S. Hara, H. I. Fujishiro, A. Endoh, and I. Watanabe, Tokyo University

of Science, Chiba, Japan

11:30 We-2E.5

Optimized InP HEMTs for Low Noise at Cryogenic Temperatures

Helena Rodilla, Chalmers University of Technology, Goteborg, Sweden

11:45 We-2E.6

Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based HEMT Structures with

InGaAs/InAs Composite Channel

H. Sugiyama, T. Hoshi, H. Yokoyama and H. Matsuzaki, NTT Photonics Laboratories,

NTT Corporation, Kanagawa, Japan


60

Wednesday Aug. 29

1:30 PM – 5:30 PM

Santa Barbara Wine Tour Excursion Departs from the Manzanita Village Bus Loop at 1:30PM.

Wednesday Aug. 29

5:30 PM – 7:30 PM

Goleta Beach Barbeque

61

Thursday August 30

8:30 AM – 10:00 AM

Th 1A: Sources Room: Corwin Pavilion West

Session Chair: Paul Simmons, University of California, Los Angeles

8:30 Th-1A.1

Overcoming Limiting Factors in Blue VCSEL Technology (Invited)

Cosendey, A. Castiglia, J.-F. Carlin, R. Butté, N. Grandjean, EPFL, Switzerland

9:00 Th-1A.2

Study of Transient Responses of InGaAs Quantum-Dot Microdisk Lasers under

Optical Excitation M.-H. Mao, Y. C. Shen, H. C. Chien, C.Y. Cheng, P. C. Lin, National Taiwan University,

Taiwan

9:15 Th-1A.3

High Temperature, Single Mode, Continuous Wave Operation of Electrically-

Pumped Monolithic GaSb VCSELs D. Sanchez, L. Cerutti, E. Tournié, University of Montpellier, France

9:30 Th-1A.4

Ridge Waveguide InGaN/GaN Quantum Dot Edge Emitting Visible Lasers

Animesh Banerjee, Thomas Frost, Pallab Bhattacharya, University of Michigan, USA

9:45 Th-1A.5

Optical Polarization Characteristics on Semipolar (30-31) and (30-3-1) InGaN/GaN

Light-Emitting Diodes

Yuji Zhao, Qimin Yan, Daniel Feezell, Steven P. DenBaars, James S. Speck, C. G. Van

de Walle, Shuji Nakamura, University of California, Santa Barbara, USA; Kenji Fujito,

Mitsubishi Chemical Co., Japan


62

Thursday August 30

8:30 AM – 10:00 AM

Th 1B: Characterization II Room: Corwin Pavilion East

Session Chair: Holger Eisele, Technical University, Berlin, Germany

8:30 Th-1B.1

Nano-scale Characterization of Nitrides using Helium Temperature Scanning

Transmission Electron Microscopy Cathodoluminescence (Invited)

Jürgen Christen, Otto-von-Guericke-University, Germany

9:00 Th-1B.2

Surface Studies of InAs Nanowires M. Hjort, S. Lehmann, J. Knutsson, R. Timm, E. Lundgren, K. Deppert, L. Samuelson,

K.A. Dick, A. Mikkelsen, Lund University, Sweden

9:15 Th-1B.3

Polarization Dependent Photocurrent Spectroscopy for Identification of Quantum

Confined Interband Transitions in Type-II InAs/GaSb Superlattices Nutan Gautam, A.V. Barve, S. Krishna, University of New Mexico, USA

9:30 Th-1B.4

An Atomic Scale Comparison of Trimethylaluminum Nucleation on InGaAs (4x2)

vs. (2x4) Surfaces

T. Kent, W. Melitz, A Kummel, University of California, San Diego, USA; R. Droopad,

Texas State University, USA

9:45 Th-1B.5

Cathodoluminescence Microscopy of InGaN Nano-Structures on Self-Organized

GaN Pyramids

G. Schmidt, F. Bertram, S. Metzner, M. Müller, P. Veit, J. Christen, Otto-von-Guericke-

University Magdeburg, Germany; M. Jetter, C. Wächter, P. Michler, Stuttgart University,

Germany


63

Thursday August 30

8:30 AM – 10:00 AM

Th 1C: Electronics Room: MultiCultural Theater

Session Chair: Mark Rodwell, University of California, Santa Barbara, USA

8:30 Th-1C.1

InAlN/AlN/GaN HEMTs Low-Voltage State-of-the-Art X-band Power

Performances (Invited)

Paul Saunier, Hua-Quen Tserng, Andrew Ketterson, Michael Schuette, Triquint

Semiconductor Inc., USA; Xiang Gao, Shiping Guo, IQE RF LLC, USA

9:00 Th-1C.2

InGaAs/InP DHBTs with Emitter and Base Defined through Electron-Beam

Lithography for Reduced Ccb and Increased RF Cut-off Frequency Evan Lobisser, Johann C. Rode, Vibhor Jain, Han-Wei Chiang, Ashish Baraskar, William

J. Mitchell, Brian J. Thibeault, Mark J. W. Rodwell, University of California, Santa

Barbara, USA; M. Urteaga, Teledyne Scientific & Imaging, USA; D. Loubychev, A.

Snyder, Y. Wu, J. M. Fastenau, A. W. K. Liu, IQE Inc., USA

9:15 Th-1C.3

InAs Hot Electron Transistors with Cutoff Frequency above 200 GHz H. Nguyen van, A.N. Baranov, R. Teissier, Institut d’Electronique du Sud, France; M.

aknoune, Institut d’Electronique de Microélectronique et de Nanotechnologie, France

9:30 Th-1C.4

317 GHz InAlGaN/GaN HEMTs with Extremely Low On-Resistance

Dong Seup Lee, Tomás Palacios, Massachusetts Institute of Technology, USA; Oleg

Laboutin, Yu Cao, Wayne Johnson, Kopin Corporation, Taunton, USA; Edward Beam,

Andrew Ketterson, Michael Schuette, Paul Saunier, Triquint Semiconductor Inc., USA;

David Kopp, Patrick Fay, University of Notre Dame, USA

9:45 Th-1C.5

N-Polar GaN/InAlN/AlGaN MIS-HEMTs with Highly Scaled GaN Channels

D. Denninghoff, J. Lu, E. Ahmadi, S. Keller, U. K. Mishra, University of California,

Santa Barbara, USA


64

Thursday Aug. 30

8:30 AM – 10:00 AM

Th 1D- Nanowires and Quantum Dots Room: University Center Harbor Room

Session Chair:

8:30 Th-1D.1

Selective-area Growth InP-based Nanowires and Their Optical Properties (Invited)

Junichi Motohisa, Hokkaido University

9:00 Th-1D.2

Single GaAs Nanowire Photovoltaic Devices under Very High Power Illumination

A. Lysov, C. Gutsche, W. Prost, F.-J. Tegude, Center for Nanointegration, University of

Duisburg-Essen, Duisburg, Germany

9:15 Th-1D.3

Radial InP/InAsP Quantum Wells with High Arsenic Compositions on Wurtzite-InP

Nanowires in the 1.3-Âµm Region

K. Kawaguchi, Y. Nakata, M. Ekawa, T. Yamamoto, and Y. Arakawa, Fujitsu

Laboratories Ltd., Atsugi, Japan

9:30 Th-1D.4

Site-controlled Growth of InP/InGaP Quantum Dots

V. Baumann, F. Stumpf, S. Kremling, T. Steinl, A. Forchel, C. Schneider, S. Höfling, and

M. Kamp, Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen

Research Center for Comple Material Systems, Universit t W rzburg, W rzburg,

Germany

9:45 Th-1D.5

Catalyst Design for Native Oxide Based Selective Area InP Nanowire Growth

Yonatan Calahorra, EE faculty, Technion, Haifa, Israel


65

Thursday August 30

10:30 AM – 12:00 PM

Th 2A: Nanoheterostructures Room: Corwin Pavilion East

Session Chair: Baolai Liang, University of California, Los Angeles, USA

10:30 Th-2A.1

Coherent manipulation of three-spin states in a GaAs/AlGaAs triple dot device

(Invited)

Sergei Studenikin, G. Aers, G. Granger, L. Gaudreau, A. Kam, P. Zawadzki, Z. R.

Wasilewski, A. Sachrajda, National Research Council Canada, Canada

11:00 Th-2A.2

Random Behavior in Stimulated Emission of Regularly Arranged InGaN/GaN

MQW Nanocolumns

Shunsuke Ishizawa, Sophia University, Japan; Katsumi Kishino, Sophia Nanotechnology

Research Center, Japan

11:15 Th-2A.3

Plastic Strain Relaxation in Axial (In,Ga)N/GaNNanorodHeterostructures

X. Kong, A. Trampert, Paul-Drude-InstitutfürFestkörperelektronik, Germany; S. Albert,

A. Bengoechea-Encabo, M. A. Sanchez-Garcia, E. Calleja, Ciudad Universitaria,Spain;

M. Mandl, M. Binder, B. Galler, M. Strassburg,OSRAM Opto Semiconductors GmbH,

Germany

11:30 Th-2A.4

Improving Electron Mobility of InAs Quantum Well High Electron Mobility

Transistors Grown on Si Substrates by a GaAs/GaAsSb Step-Graded Buffer Layer

Pei-Chin Chiu, Han-Chieh Ho, Yu-Ming Hsin, Jen-Inn Chyi, Sheng-Wei Lee, National

Central University, Taiwan

11:45 Th-2A.5

Intersubband Absorption and Photocurrent Response in Non-Polar III-Nitrides

Multi-Quantum Well Structures

E. Gross, A. Vardi, A. Pesach, G. Bahir, Technion-Israel Institute of Technology, Israel;

C-Y. Huang, Y-D. Lin, S. Nakamura, University of California Santa Barbara, Santa

Barbara, USA; S. E. Schacham, Ariel University Center, Israel


66

Thursday August 30

10:30 AM – 12:00 PM

Th 2B: III-N Characterization Room: Corwin Pavilion East

Session Chair: Andrea Lenz, Technical University, Berlin, Germany

10:30 Th-2B.1

Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An

Investigation Based on Electrical and Capacitive Measurements (Invited)

M. Meneghini, M. Bertin, G. Dal Santo, A. Stocco, D. Bisi, G. Meneghesso, E. Zanoni,

University of Padova, Italy; D. Marcon, P. E. Malinowski, IMEC, Belgium; A. Chini,

University of Modena and Reggio Emilia, Italy

11:00 Th-2B.2

Stress Relaxation in Semipolar AlGaN/GaN Heterostructures

Erin C. Young, F. Wu, D. Haeger, A. Romanov, D. Cohen, J.S. Speck, University of


11:15 Th-2B.3

Extraction of Conduction Band Offsets and Interface Charges on Polar Non-Polar

and Semi-Polar GaN/AlGaN Heterostructures through Capacitance-Voltage

Profiling

C. A. Hurni, U. K. Mishra, J. S. Speck, University of California, Santa Barbara, USA

11:30 Th-2B.4

The Strain-Modulated Hole Concentration Enhancement in p-Type

Al0.15Ga0.85N/GaN Superlattices via AlN Interlayers

Lei Li, Ding Li, Lei Liu, Weihua Chen, Zhijian Yang, Xiaodong Hu, Peking University,

China

11:45 Th-2B.5

Characterization of Polar AlN/GaN Interfaces Using Atom Probe Tomography

B. Mazumder, M. H. Wong, C.A. Hurni, U.K. Mishra, J. S. Speck, University of



67

Thursday Aug. 30

10:30 AM – 12:00 AM

Th 2C- Lasers II Room: MultiCultural Theater

Session Chair:

10:30 Th-2C.1

High Speed VCSELS for Optical Interconnects (Invited)

Anders Larsson, Chalmers University

11:00 Th-2C.2

Slotted Tunable Laser with Monolithic Integrated Mode Coupler

James R. O'Callaghan, Tyndall Nation Institute, Cork, Munster, Ireland

11:15 Th-2C.3

C-band Operation of Lateral-grating-assisted Lateral Co-directional Coupler

Tunable Laser with High-mesa Buried Hetero-structure

Takanori Suzuki, Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo,

Japan

11:30 Th-2C.4

Multiple Coherent Outputs from Single Growth Monolithically Integrated Injection

Locked Tunable Lasers

Padraic Morrissey, Tyndall Nation Institute, Cork, Munster, Ireland

11:45 Th-2C.5

Low-Threshold Operation of LCI-Membrane-DFB Lasers with Be-doped GaInAs

Contact Layer

M. Futami, T. Shindo, K. Doi, T. Amemiya, N. Nishiyama, S. Arai, Department of

Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan


68

EXHIBITORS

Booth Number Company Page Number

1 Wafer Technology Ltd 69

2 Aixtron 69

3 Laytec AG 69

4 IOP Publishing 70

5 Vesco-NM 70

6 LakeShore Cryotronics 70

7 Evans Analytical Group 71

8 abcr & Osaka Asahi Metal Mfg. Co., Ltd. 71, 72

9 Dockweiler Chemical 72

10 K-Space 72

11 IntelliEPI 73

12 CS CLEAN SYSTEMS 73

13 nanometrics 73

14 AXT Inc. 74

15 Vacuum Barrier Corporation 74

16 Riber Inc. 74

17 JX Nippon 75

====================================================================

The following profiles were provided by the companies/exhibitors.

69

ISCS/IPRM EXHIBITORS

Booth 1: Wafer Technology LTD

Wafer Technology, a member of the IQE plc group of companies, manufactures the world's

broadest range of III-V substrates (GaAs, InP, GaSb, InSb and InAs) using both VGF and LEC

growth techniques. Material is supplied as epi-ready substrates in 2”, 3” and 4'' diameter. All

products are manufactured at the company’s Milton Keynes (U.K.) headquarters according to

ISO 9001/14001 certified processes.

http://www.wafertech.co.uk/

Booth 2: Aixtron

AIXTRON is a leading provider of deposition equipment to the semiconductor industry. The

Company's technology solutions are used by a diverse range of customers worldwide to build

advanced components for electronic and opto-electronic applications based on compound,

silicon, or organic semiconductor materials, as well as polymers, carbon nanotubes (CNT),

graphene and other nanomaterials. Such components are used in fiber optic communication

systems, wireless and mobile telephony applications, optical and electronic storage devices,

computing, signaling and lighting, as well as a range of other leading-edge technologies.

http://www.aixtron.com/

Booth 3: Laytec AG

LayTec is a major provider of in-situ and in-line optical metrology for thin-film processes. Our

integrated metrology gives direct access to all key thin-film parameters in real-time during the

film deposition. LayTec in-situ metrology systems uniquely combine optical measurement

techniques such as reflectometry, emissivity corrected pyrometry, laser deflectometry, and

reflectance anisotropy spectroscopy. The implementation of LayTec in-situ metrology systems

in MOVPE production processes significantly shortens development cycles and enables an

efficient quality control that helps to considerably reduce production and development costs.

Supported by a global distribution and service network, LayTec products are used worldwide in

leading industrial enterprises and research institutions.

http://www.laytec.de/

70

Booth 4: IOP Publishing

IOP Publishing is a world leader in scientific publishing and the electronic dissemination of

physics. Our portfolio includes a number of exceptional journals, magazines and websites across

many scientific, technical and medical disciplines. We have continued this reputation for

innovation with the full digitization of our complete Journal Archive and our web products and

services for the STM community, including physicsworld.com, medicalphysicsweb.org,

nanotechweb.org and IOPscience.org.

http://www.iop.org/

Booth 5: Vesco-NM

VESCO-NM was founded in 2005 and is specialized in crystal growth reactors, MBE and

MOCVD, and semiconductor materials growth and development. Our products and services

reach the highest standards and the best performance with competitive price. VESCO-NM

fabricates many components for MBE and MOCVD that make customers success

straightforward and easy. Our products are designed to minimize problems and to achieve high

reliability under all growth conditions. VESCO-NM offers also technical support and

maintenance agreements for crystal growth reactors, characterization tools, and clean room

equipment. We also provide refurbishment, installation, operation, for MBE and MOCVD and

semiconductor fabrication tools.

http://www.vesconm.com/

Booth 6: Lakeshore Cryotronics

LakeShore Cryotronics is an international leader in precision measurement and control solutions

for scientific applications. They offer high performance tools for magnetic and electronic

transport property characterization of materials, including hi-sensitivity integrated

magnetometers and Hall effect measurement systems. The new 8400 series AC field Hall effect

measurement system now enables reliable characterization of materials with very low carrier

mobilities. Their extensive line of cryogenic probe stations enable non-destructive testing of

devices on full and partial wafers. Providing sales and support in over 40 countries, Lake Shore

is a well-respected brand in academic research, national lab, and technology industry markets.

http://www.lakeshore.com/

http://physicsworld.com/

71

Booth 7: Evans Analytical Group

EAG’s e pertise in materials characterization and microscopy of compound semiconductor

materials is second to none. Our SIMS services offer unique capabilities for the measurement of

composition, contaminants and dopants in all types of structures, from LEDs to solid state lasers

to cutting edge electronics. Furthermore, our advanced electron microscopy services (including

SEM, TEM and STEM) provide excellent imaging capabilities. With all our services, we aim to

be your primary source for fast, reliable, high quality materials characterization, helping support

your R&D, production and supply chain.

Evans Analytical Group® (EAG) is the global leader in outsourced surface analysis and

materials characterization services for compound semiconductor manufacturing. EAG has been

delivering innovative analytical services and solutions since its original founding in 1978 as

Charles Evans & Associates and now has over 20 different sites covering Europe, Asia and

North America.

http://www.eaglabs.com/

Booth 8: ABCR

abcr is an established supplier of specialty chemicals, including organo-silanes,

specialtyfluorinated organics and inorganics, catalysts, metal-organics and heterocycles.

Furthermore, we can offer the full range of high purity metals up to 7N purity in collaboration

with Osaka Asahi, Japan, and further companies. abcr currently supplies more than 80.000

compounds from catalogue up to bulk quantities and is focused on the individual needs of

semiconductor and material science orientated companies worldwide. Competent assistance by

our chemists and engineers, global sourcing activities, reliable deliveries at fair prices and

excellent quality have made abcr the “preferred supplier” for many customers.

http://www.abcr.de/

72

Booth 8: Osaka Asahi Metal Mfg. Co., Ltd.

Since 1958 we have been specializing in manufacturing High Purity Metals in several levels of

purity and serving for electronics and semiconductor industry. Our current products are:

5N:Mn(new),Mg(new), Fe(new), In, Sb, Te, Al, Sn, Zn, Bi, Cd, Pb,

6N: In, Se, Sb, Zn, Cd, Te, Bi, Pb

7N Level: In, Sb, Zn, Se, Cd, Te

Metal forms: ingot, shot, chunk, rod, tapered rod

Packaging: Vacuum-seals in polyethylene-nylon film; sealed in argon atmosphere in

polyethylene-nylon film; sealed in argon atmosphere in plastic bottle; vacuum-sealed in glass

ampoule

http://www.asahimetal.co.jp/index%20english.html/

Booth 9: Dockweiler Chemicals

Dock/Chemicals is the leading MO-V producer of highest purity TBAs, TBP. Our offering also

includes highest quality CVD precursors enabling III/V on Si and low temperature epitaxial

processes by introducing novel materials. In addition to our chemicals we provide customers

with advanced equipment solutions (bubbler, delivery systems, chillers,…) to meet the technical

and commercial requirements for epitaxial processes of the future.

http://www.dockweiler-chemicals.com/

Booth 10: K-Space

Founded in 1992, k-Space Associates is a leading supplier of advanced instrumentation and

software for the surface science and thin-film technology industry. k-Space sets the standard for

analytical RHEED with the kSA400. kSA MOS yields in-situ curvature, stress, and strain while

our kSA MOS Ultra-Scan and Thermal-Scan provides full two-dimensional stress mapping of

samples from RT up to 1200 degrees C. kSA RateRat monitors real-time deposition rate and

optical constants via laser reflectivity. Our kSA BandiT, for monitoring substrate wafer

temperature during film growth, now provides Blackbody temperature capability below 200

degrees C!

http://www.k-space.com/

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Booth 11: Intelliepi

Intelligent Epitaxy Technology, Inc. (IntelliEPI), a leading "Pure Play" epi supplier of GaAs,

InP, and GaSb based epi wafers for electronic/optoelectronic industries. Products include

HEMT, HBT, Laser, photodetector, and III/V on Si. Capabilities include Sb-based materials.

http://www.intelliepi.com/

Booth 12: CS Clean Systems

CS CLEAN SYSTEMS stands for safe abatement of MOCVD gases and provides:

· Waste gas treatment for MOCVD research and manufacturing

· Safe, dry chemical conversion of toxic gases to stable solids

· Proprietary CLEANSORB media specially developed for high PH3 gas flows

· Backup column for 100% uptime

· Local refill service worldwide

· No handling of toxic waste

· Newly-developed chemisorber for SiGe and III-V-Si applications

The company’s eco-friendly CLEANSORB technology safely removes hazardous waste gases

without consuming energy, water or fuel. It is the most elegant and environmentally friendly

purification technology of exhaust gas abatement.

http://www.cscleansystems.com/

Booth 13: Nanometrics

Nanometrics is a leading provider of advanced process control systems and solutions used

primarily in the characterization of silicon and compound semiconductors, including

photoluminescence, carrier concentration profiling, defect inspection, hall measurement and

analysis of various other film properties. Nanometrics’ automated and integrated systems address

numerous applications in high-brightness LEDs, data storage devices, photovoltaics and basic

materials research. The company maintains its headquarters in Milpitas, California, with sales

and service offices worldwide.

http://www.nanometrics.com/

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Booth 15: AXT Inc.

AXT, Inc. manufactures and distributes compound and single element compound semiconductor

substrates (Gallium Arsenide, Indium Phosphide and Germanium). It offers semi-insulating and

semiconducting substrates. In addition, the company, through its joint ventures, manufactures

and sells gallium, arsenic, germanium, germanium dioxide, and pyrolytic boron nitride crucibles.

http://www.axt.com/

Booth 16: Vacuum Barrier Corporation

VACUUM BARRIER CORPORATION is the industry leader in the design and fabrication of

liquid nitrogen piping systems. We have provided both static and dynamic vacuum-jacketed

flexible piping and modular components from our own factory since 1958. Closed-Loop LN2

piping systems for Molecular Beam Epitaxy are engineered to be safe, reliable, and interface

with all MBE production and research tools.

http://www.vacuumbarrier.com/

Booth 17: Riber Inc.

RIBER is the leading supplier of Molecular Beam Epitaxy products and related services for the

compound semiconductor industry. RIBER delivers MBE machines and components worldwide

to major Universities, Material Science Institutes, Compound Semiconductor foundries or

epiwafer merchant suppliers. RIBER is indisputably the world leader in the field. Riber designs

and produces Molecular Beam Epitaxy (MBE) systems as well as evaporation sources and cells

for the semiconductor industry. This high-tech equipment is essential for the manufacturing of

compound semiconductor materials and new materials that are used in numerous consumer

applications, from new information technologies to OLED flat screens and new generation solar

cells.

http://www.riber.com/

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Booth 18: JX Nippon

Compound Semiconductor Materials division of JX Nippon Mining & Metals produces high

quality substrates including InP, CdZnTe, and ZnTe under the brand name ACROTEC.

Additional products include high purity metals: In, Cd, Te, and various others.

http://www.nikkometals.com/index.html

Technical Co-Sponsor:

IEEE

IEEE is the world’s largest professional association dedicated to advancing technological

innovation and excellence for the benefit of humanity. IEEE and its members inspire a global

community through IEEE's highly cited publications, conferences, technology standards, and

professional and educational activities.

http://www.IEEE.org/

Financial Sponsor:

Staib Instruments

STAIB designs and manufactures high performance, reliable instruments for in situ material

analysis and Multi-technique Surface Analysis Chambers: Electron Guns for analytical surface

studies-flood, microfocus, general purpose, low energy, nano-focus; RHEED systems to study

structure, film quality in UHV & high pressure; CMA energy spectrometers (Auger, SAM, XPS,

and UPS)for analytical surface studies; SEM using our micro-focus guns; Photo-Electron

Emission Microscopes-PEEM; ESCA;X-ray Sources.

http://www.staibinstruments.com/

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Documents