cleanroom equipment overview - universiteit twente · version 1.1 (9-10-2002) 4 category: back-end...

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Cleanroom Equipment Overview Version 1.1 (9-10-2002)

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Category: Back-end processing Reference name: Disco Dicing saw Apparatus type: Disco DAD-2H/6T Function: Sawing Si wafers and glass substrates Main purpose: Si wafers and glass substrates can be sawn with a certain saw

depth Main characteristics: Saw width: 30 µm - 300 µm depending on the blade used

Maximum substrate thickness <3 mm depending on the blade used

Facilities: Microscope + camera for aligning. Device data can be stored Typical application: Dicing of silicon and glass wafers Specimen: Maximum substrate size 100 mm Data/spectra recording: Conditions: Training 1 run of 2 hours Remarks: Only hub less blades can be used Reservation needed: Yes Room number: CR 128 C Contact person: R. Wolf Phone: +31-(0)53-489 2221 Email: [email protected] Backup contact person: G. Boom Phone backup: +31-(0)53-489 1047 Email: [email protected]

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Category: Back-end processing Reference name: Anodic Bonder Apparatus type: EV-501 Function: Bonding wafers Main purpose: Bonding wafers Main characteristics: Bonding plan parallel substrates

Temp max.550 C Bonding voltage 0-1200 V/ 50mA Pressure up to 3,4 kN

Facilities: Bonding under vacuum and controlled ambient Typical application: Bonding silicon and quartz wafers Specimen: 100 mm substrates Conditions: 4 hours training Remarks: Reservation needed: Yes Room number: CR 117 B Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: S. Geerdink Phone backup: +31-(0)53-489 5622 Email: [email protected]

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Category: Back-end processing Reference name: Loadpoint Dicing saw Apparatus type: Loadpoint Micro Ace 3 Function: Sawing Si wafers and glass substrates Main purpose: Si wafers and glass substrates can be sawn with a certain saw

depth Main characteristics: Saw width: 100 µm - 300 µm depending on the blade used

Maximum substrate thickness <3 mm depending on the blade used

Facilities: Camera for alignment Typical application: Dicing of silicon and glass wafers Specimen: Maximum substrate size 100 mm Data/spectra recording: Conditions: Training 1 run of 2 hours Remarks: Hub type blades possible on request Reservation needed: Yes Room number: CR 129 C Contact person: R. Wolf Phone: +31-(0)53-489 2221 Email: [email protected] Backup contact person: G. Boom Phone backup: +31-(0)53-489 1047 Email: [email protected]

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Category: Back-end processing Reference name: Wire bonder I Apparatus type: WeldEquip Westbond Function: Wire bonding Main purpose: Making electrical connections to a substrate by contact

bonding Main characteristics: Minimum bondings pad size 100x100 µm2

Wire thickness 25 µm Facilities: For the use of gold wires ask contact person Typical application: Bonding of Aluminium wires to a substrate Specimen: Different types of substrates are possible Data/spectra recording: Conditions: Training 1 run of 1 hour Remarks: See Wire bonder II. Only one wire bonder can be used at the

same time Reservation needed: Yes Room number: CR 121 B Contact person: R. Wolf Phone: +31-(0)53-489 2221 Email: [email protected] Backup contact person: G. Boom Phone backup: +31-(0)53-489 1047 Email: [email protected]

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Category: Back-end processing Reference name: Wire bonder II Apparatus type: WeldEquip Westbond Function: Wire bonding Main purpose: Making electrical connections to a substrate by contact

bonding Main characteristics: Minimum bondings pad size 100x100 µm2

Wire thickness 25 µm Facilities: For the use of gold wires ask contact person Typical application: Bonding of Aluminium wires to a substrate Specimen: Different types of substrates are possible Data/spectra recording: Conditions: Training 1 run of 1 hour Remarks: See Wire bonder I. Only one wire bonder can be used at the

same time Reservation needed: Yes Room number: CR 121 B Contact person: R. Wolf Phone: +31-(0)53-489 2221 Email: [email protected] Backup contact person: G. Boom Phone backup: +31-(0)53-489 1047 Email: [email protected]

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Category: Characterisation Reference name: AFM/STM Apparatus type: Digital Instruments Nanoscope III Function: Surface imaging/characterisation Main purpose: AFM: While scanning across a sample the translation of a

very sharp needle (single atom tip) is measured as a result of interatomic forces STM: a tunnelling current between a very sharp needle and a (semi-) conducting material is measured while scanning across a sample

Main characteristics: Scan heads

AFM: 0.7x0.7µm² and 140x140 µm² STM: 1x1 µm² Interpretation of images can be difficult

Facilities: Contact mode and tapping mode available Typical application: Determination of surface morphology on an atomic scale

Roughness measurement Specimen: Square maximal 10 x 10 mm Data/spectra recording: Digital Data Recording Conditions: 2 times ½ day training Remarks: Reservation needed: No Room number: CR 130 C Contact person: A.M. Otter Phone: +31-(0)53-489 1046 Email: [email protected] Backup contact person: E.H.J. Ruiter Phone backup: +31-(0)53-489 4009 Email: [email protected]

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Category: Characterisation Reference name: EDX Apparatus type: Noran Series II 5502N EDX and passive Digital Image

Acquisition System Function: Chemical analysis of materials Main purpose: Chemical analysis of materials Main characteristics: Chemical element analysis, from Carbon; full quantification

from Oxygen Facilities: Energy Dispersive X-ray analysis Typical application: Routine analysis and high-resolution studies on

semiconductor surfaces and Integrated Circuits: surface morphology, bulk analysis, grain boundaries, metal fatigue, micro-alloyed materials, micro electronics, polymers, complex new materials

Specimen: High vacuum resistant specimen, in solid state, inorganic,

organic. Specimen preparation often required (specimen diameter < 150 mm)

Data/spectra recording: Digital Image Acquisition and/or photographic film Conditions: ½ day training Remarks: Reservation needed: Yes; in combination with SEM JEOL 5610 Room number: CR 130 C Contact person: A.M. Otter Phone: +31-(0)53-489 1046 Email: [email protected] Backup contact person: E.H.J. Ruiter Phone backup: +31-(0)53-489 4009 Email: [email protected]

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Category: Characterisation Reference name: HP parameter analyser Apparatus type: HP 4145B parameter analyser + Karl Süss 1050000 prober Function: Electrical measurement Main purpose: Electrical measurement Main characteristics: Digital programmable Facilities: Automated measurement Typical application: Semi conductor measurements Specimen: up to 100 mm Data/spectra recording: 3½ � floppy Conditions: ½ day training Remarks: Reservation needed: No Room number: CR 118 B Contact person: E.H.J. Ruiter Phone: +31-(0)53-489 4009 Email: [email protected] Backup contact person: A.M. Otter Phone backup: +31-(0)53-489 1046 Email: [email protected]

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Category: Characterisation Reference name: Leitz microscope Apparatus type: Leitz microscope Function: Observation of materials using light microscopy Main purpose: Observation of materials using light microscopy

Measurement line thickness Main characteristics: Magnification 50 to 1000 times Facilities: Nomarski measurement option

Polaroid camera Colour monitor

Typical application: Visual inspection of materials Specimen: Almost everything Data/spectra recording: Conditions: Training 1 run Remarks: Reservation needed: No Room number: CR 125 C Contact person: A.M. Otter Phone: +31-(0)53-489 1046 Email: [email protected] Backup contact person: H. van Vossen Phone backup: +31-(0)53-489 2752 Email: [email protected]

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Category: Characterisation Reference name: 4-point measurement probe Apparatus type: Matheson 4-point measurement probe Function: Resistively measurement Main purpose: Determination of the sheet resistively of a conducting thin

film by a four-point measurement Main characteristics: Measurement range from 1 mOhm square upward Facilities: Typical application: Determination of the resistively of a material

Sheet resistance measurement Specimen: Up to 100 mm; Almost everything Data/spectra recording: Conditions: Training 1 run; 2-hours Remarks: Reservation needed: No Room number: CR 118 B Contact person: E.H.J. Ruiter Phone: +31-(0)53-489 4009 Email: [email protected] Backup contact person: A.M. Otter Phone backup: +31-(0)53-489 1046 Email: [email protected]

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Category: Characterisation Reference name: µ Balans Apparatus type: Sartorius 2004 MP Function: Weight measurement Main purpose: Weight measurement of wafers

Determination of mass Main characteristics: Resolution ±0.02 mg

Measurement of mass up to 166 g Facilities: Typical application: Weighing materials Specimen: Up to 100 mm

Clean specimens only Data/spectra recording: Conditions: Introduction of 2 hours Remarks: Wafers have to be on room temperature Reservation needed: No Room number: CR 125 C Contact person: E.H.J. Ruiter Phone: +31-(0)53-489 4009 Email: [email protected] Backup contact person: H. van Vossen Phone backup: +31-(0)53-489 2752 Email: [email protected]

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Category: Characterisation Reference name: Nikon Microscope Apparatus type: Nikon Optiphot light microscope Function: Material observation using light microscopy Main purpose: Material observation using light microscopy Main characteristics: Allows viewing from 16x to 1200x Facilities: Bright field microscopy

Polarisation microscopy Typical application: Observation of materials sections using bright field, incident

light and polarised light Specimen: All solid materials with a flat surface Data/spectra recording: Conditions: Remarks: Reservation needed: No Room number: CR 112 B Contact person: A.M. Otter Phone: +31-(0)53-489 1046 Email: [email protected] Backup contact person: H. van Vossen Phone backup: +31-(0)53-489 2752 Email: [email protected]

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Category: Characterisation Reference name: Olympus microscope Apparatus type: Olympus microscope Function: Observation of materials using light microscope Main purpose: Observation of materials using light microscope Main characteristics: 50 to 1000 times magnification Facilities: Bright field microscope

Top or bottom illumination Nomarski measurement option Polariod camera CCD camera and monitor UV illumination of sample Black and white monitor Digital camera and computer Line width measurement

Typical application: Visual Inspection of materials Specimen: All kinds of samples Data/spectra recording: Digital Data Recording Conditions: Training 1 run Remarks: Reservation needed: No Room number: CR 102 A, CR 117 B (line thickness), CR 118 B (layer

thickness), CR 125 C Contact person: A.M. Otter Phone: +31-(0)53-489 1046 Email: [email protected] Backup contact person: H. van Vossen Phone backup: +31-(0)53-489 2752 Email: [email protected]

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Category: Characterisation Reference name: XRD diffractometer Apparatus type: Philips XRD model Expert system II Function: Crystallographic measurements

Thin-film thickness measurement Main purpose: Determination of crystal parameters by diffraction of high-

energy X-rays Main characteristics: Two measurement types,

1. theta-2theata scan, 2theata scan and omega scan. X-ray opticsand stage are especially designed for low angle thin film measurements 2. Texture measurements using a special sample cradle only 15mm samples

Facilities: Typical application: Measurement of the distance between crystal planes

Wafer characterisation Specimen: Wafers up to 100 mm Data/spectra recording: Digital Data Acquisition Conditions: 2 times ½ day training Remarks: Reservation needed: Yes Room number: CR 118 B Contact person: E.H.J. Ruiter Phone: +31-(0)53-489 4009 Email: [email protected] Backup contact person: A.M. Otter Phone backup: +31-(0)53-489 1046 Email: [email protected]

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Category: Characterisation Reference name: Plasmos ellipsometer Apparatus type: Plasmos SD 2002 Function: Optical transparent thin film measurement Main purpose: Determination of thickness and real refractive index of a thin

(multi-) layer Main characteristics: Discrete wavelengths of 632.8 nm and 1550 nm

Information limit, several µm (optically transparent) Measuring spot diameter, 50 µm

Facilities: Automatic measurement of ψ and ∆ of a thin layer Possibility

for mapping of a substrate Model evaluation of thickness and refractive index for multi-layer system: max. number of layers five

Typical application: Determination of optical properties of thin films, dielectrics,

semiconductors, metals, high-TC superconductors Silicium oxide and silicium nitride layer characterisation

Specimen: maximum substrate diameter approx. 150 mm

Clean wafers only Virtually every substrate material

Data/spectra recording: Digital Data Recording and print on paper Conditions: Training 1 run 3 hours Remarks: Reservation needed: No Room number: CR 118 B Contact person: E.H.J. Ruiter Phone: +31-(0)53-489 4009 Email: [email protected] Backup contact person: A.M. Otter Phone backup: +31-(0)53-489 1046 Email: [email protected]

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Category: Characterisation Reference name: SEM Apparatus type: JEOL 5610 Function: Surface imaging Main purpose: Inspection and measurement of samples Main characteristics: Maximum accelerating voltage, 30 kV

Minimum accelerating voltage, 0.6 kV Lateral resolution (SEM), 3.5 nm on gold (at 30 kV) Chemical element analysis, from Carbon; full quantification from Oxygen Magnification 30-300000

Facilities: Secondary electron images

Backscattered Electron Detection Energy Dispersive X-ray analysis

Typical application: Routine analysis and high-resolution studies on

semiconductor surfaces and Integrated Circuits: surface morphology, bulk analysis, grain boundaries, metal fatigue, micro-alloyed materials, micro electronics, polymers, complex new materials

Specimen: High vacuum resistant specimen, in solid state, inorganic,

organic. Specimen preparation often required (specimen diameter < 150 mm)

Data/spectra recording: Digital Image Acquisition Conditions: ½ day training Remarks: Limited access Reservation needed: Yes Room number: CR 130 C Contact person: A.M. Otter Phone: +31-(0)53-489 1046 Email: [email protected] Backup contact person: E.H.J. Ruiter Phone backup: +31-(0)53-489 4009 Email: [email protected]

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Category: Characterisation Reference name: Tektronix 370 curve tracer Apparatus type: Tektronix 370 Curve tracer + Karl Süss 60400 prober Function: Electrical measurment Main purpose: Electrical measurment Main characteristics: 1µA-2A vert/div

50mV-500V Horizon/div Facilities: Manual control Typical application: Semi conductor measurements Specimen: up to 100 mm Data/spectra recording: Conditions: ½ day training Remarks: Reservation needed: No Room number: CR 118 B Contact person: E.H.J. Ruiter Phone: +31-(0)53-489 4009 Email: [email protected] Backup contact person: A.M. Otter Phone backup: +31-(0)53-489 1046 Email: [email protected]

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Category: Characterisation Reference name: Dektak Apparatus type: Veeco Dektak 8 Function: Surface profile measurement Main purpose: Height difference measurement by scanning with a needle

with adjustable speed and force across a surface Main characteristics: Horizontal scan length from 50 µm to 100 mm

Vertical resolution 1 Å Max. scanheight 262 µm. On request 1 mm Needle force 0.1-15 milligrams

Facilities: Roughness, step height and step angle calculation

Diamond needles available with radii of: 2.5 µm Typical application: Roughness measurements

Layer thickness measurements Wafer inspection/measurement

Specimen: Up to 200 mm

Clean wafers only Data/spectra recording: You can make a print on paper Conditions: ½ day training Remarks: Reservation needed: No Room number: CR 118 B Contact person: E.H.J. Ruiter Phone: +31-(0)53-489 4009 Email: [email protected] Backup contact person: A.M. Otter Phone backup: +31-(0)53-489 1046 Email: [email protected]

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Category: Cleaning Reference name: Ozon reactor Apparatus type: UV PRS-100 Function: Ozone cleaning Main purpose: Cleaning substrates with Ozone Atmospheric conditions Main characteristics: Atmospheric

Facilities: Clean airflow Typical application: Removing organic contamination Specimen: Up to 150 mm substrates Conditions: 15 minutes training Remarks: Reservation needed: No Room number: CR 102 A Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: R. Wolf Phone backup: +31-(0)53-489 2221 Email: [email protected]

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Reference name: A2 Anneal Apparatus type: Amtech tempress omega junior (3-stack) Function: Anneal (CMOS) / Dry oxidation Main purpose: Anneal (CMOS) / Dry oxidation Main characteristics: Temperature max 1150 °C Facilities: Available: O2, O2 low, N2

Tube cleaning with trans-LC Typical application: Annealing of nitrides/oxides

Dry oxidation of Si Specimen: 100 mm Si wafers, with a max of 50 wafers Data/spectra recording: Conditions: Introduction 1 hour

CMOS compatible Remarks: Reservation needed: Yes Room number: CR 112 B Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: AJA Apparatus type: AJA ATC 1500 Sputtering System Function: Deposition of thin films by sputtering Main purpose: Deposition of thin films by sputtering Main characteristics: Automated pump system with turbopump.

Background pressure: 2x10-7 mbar. One 500 W RF power supply on substrate holder and two 500 W DC power supplies for targets. Direct substrate cooling (20 °C) or heating up to 800 °C. Loadlock loading system

Facilities: Three magnetron sputter guns for 2 inch targets.

Two guns can be operated simultaneously. Sputter gases: Ar.

Typical application: Formation of well-defined film layers on a semiconductor

substrate or Integrated Circuit using a variety of evaporation materials, e.g., metals, semiconductors, oxides, alloys.

Specimen: Substrate holder for 100 mm wafers, single wafer per run Data/spectra recording: Conditions: Vacuum course; training 2 runs Remarks: Limited access, ask contact person. Reservation needed: Yes Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: R.M. Tiggelaar Phone backup: +31-(0)53-489 4420 Email: [email protected]

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Category: Deposition Reference name: B1 SSD Apparatus type: Amtech tempress omega junior (4-stack) Function: Solid source dotation of Boron Main purpose: Solid source dotation of Boron Main characteristics: Facilities: Available gasses: N2, O2 Typical application: Doping of silicon wafers Specimen: 100 mm Si wafers, with a max of 20 wafers Data/spectra recording: Conditions: Introduction 1 hour Remarks: Reservation needed: Yes Room number: CR 112 B Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: B2 Wet oxidation Apparatus type: Amtech tempress omega junior (4-stack) Function: Oxidation of silicon (SiO2), thin films Main purpose: Oxidation of silicon (SiO2), thin films Main characteristics: Deposition temperature max 1150 °C

Layer thickness up to 3µm Facilities: Available: H2O, O2, N2 Typical application: Specimen: 100 mm Si wafers, with a max of 25 wafers Data/spectra recording: Conditions: Introduction of 1 hour Remarks: Reservation needed: Yes Room number: CR 112 B Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: B3 Diffusion Apparatus type: Amtech tempress omega junior (4-stack) Function: Main purpose: Diffusion/oxidation after doping Main characteristics: Temperature max 1150°C Facilities: Available gasses: N2, O2 Typical application: Specimen: 100 mm Si wafers, with a max of 25 wafers Data/spectra recording: Conditions: Introduction of 1 hour Remarks: Reservation needed: Yes Room number: CR 112 B Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: BAK 600 Apparatus type: Balzers BAK 600 Function: Deposition of thin films by e-gun evaporation Main purpose: Deposition of thin films by e-gun evaporation Main characteristics: Pump system with oil diffusion pump

Base pressure: 2e-6 mbar Indirect heating of the substrate possible

Facilities: Built-in thicknesses monitor

Max. 4 materials per run Typical application: Formation of well-defined film layers on a semiconductor

substrate or Integrated Circuit using a variety of evaporation materials, e.g., metals, semiconductors, oxides, alloys

Specimen: Several substrate holders available.

Max. sixteen 100 mm wafers. Data/spectra recording: Conditions: Vacuum course; training 2 runs Remarks: 2-4 hours/run Reservation needed: Yes Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: P.W.C. Linders Phone backup: +31-(0)53-489 1053 Email: [email protected]

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Category: Deposition Reference name: Cryo Apparatus type: Balzers cryo pumped dual sputter system Function: Deposition of thin films by sputtering Main purpose: Deposition of thin films by sputtering Main characteristics: Automated pump system with cryopump

Background pressure: 2x10-7 mbar RF and DC power supplies up to 500 W, DC up to 1 kW Direct substrate cooling (20 °C) or heating up to 500 °C

Facilities: Three magnetron sputter guns for 2 inch targets

Two guns can be operated simultaneously Sputter gases: Ar and O2



Specimen: Substrate holder for 100 mm wafers, single wafer per run Data/spectra recording: Conditions: Vacuum course; training 3 runs

Remarks: For use consult Hans Mertens due to pollution for Lightwave

Device Group Reservation needed: Yes Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: P.W.C. Linders Phone backup: +31-(0)53-489 1053 Email: [email protected]

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Category: Deposition Reference name: C1 Anneal Apparatus type: Amtech tempress omega junior (6-stack) Function: Main purpose: Ta oxidation Main characteristics: Temperature max 1050 °C Facilities: Available gasses: N2, O2

Tube cleaning with tri Typical application: Specimen: 100 mm Si wafers, with a max of 15 wafers Data/spectra recording: Conditions: Introduction of 1 hour

Remarks: Limited access, ask contact person Reservation needed: Yes Room number: CR 125 C Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: C2 Anneal Apparatus type: Amtech tempress omega junior (6-stack) Function: Annealing of Al, W and Silox Main purpose: Annealing of Al, W and Silox Main characteristics: Temperature max 1050°C Facilities: Available gasses: N2, O2

Tube cleaning with tri Typical application: Specimen: 100 mm Si wafers, with a max of 15 wafers Data/spectra recording: Conditions: Introduction of 1 hour Remarks: Reservation needed: Yes Room number: CR 125 C Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: C3 Dry ox Apparatus type: Amtech tempress omega junior (6-stack) Function: Gate oxidation of silicon wafers Main purpose: Gate oxidation of silicon wafers Main characteristics: Temperature 1050 °C Facilities: Available gasses: N2, O2

Tube cleaning with tri Typical application: Thin oxide layers Specimen: 100 mm Si wafers, with a max of 15 wafers Data/spectra recording: Conditions: Introduction of ½ hour Remarks: Reservation needed: Yes Room number: CR 125 C Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: Cu plaiting Apparatus type: Electroplating bath Function: Wet chemical Copper deposition Main purpose: Wet chemical Copper deposition Main characteristics: Facilities: Typical application: Deposition of copper on base material Specimen: Si wafers Data/spectra recording: Conditions: 4 hours introduction/training Remarks: Home build Reservation needed: No Room number: CR 101 A Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: G.P.M. Roelofs Email: [email protected] Phone backup: +31-(0)53-489 3860

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Category: Deposition Reference name: D1 Dry oxidation Apparatus type: Amtech tempress omega junior (6-stack) Function: Gate oxidation for ultra clean layers Main purpose: Gate oxidation for ultra clean layers Main characteristics: Temperature max 1050 °C Facilities: Available gasses: N2, O2

Tube cleaning with tri Typical application: Thin oxide layers Specimen: 100 mm Si wafers, with a max of 15 wafers Data/spectra recording: Conditions: Introduction of ½ hour

CMOS compatible May only be used if the Si wafers have been cleaned in the ultra clean line

Remarks: Limited access, ask contact person Reservation needed: Yes Room number: CR 125 C Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: D2 Anneal Apparatus type: Amtech tempress omega junior (6-stack) Function: Annealing CMOS low temp, anneal after implantation Main purpose: Annealing CMOS low temp, anneal after implantation Main characteristics: Temperature max 1050 °C Facilities: Available gasses: N2, O2

Tube cleaning with tri Typical application: Specimen: 100 mm Si wafers, with a max of 15 wafers Data/spectra recording: Conditions: Introduction of ½ hour

CMOS compatible Remarks: Limited access, ask contact person Reservation needed: Yes Room number: CR 125 C Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: D3 wet ox Apparatus type: Amtech tempress omega junior (6-stack) Function: Wet oxidation of CMOS-compatible layers Main purpose: Wet oxidation of CMOS-compatible layers Main characteristics: Temperature max 1050 °C Facilities: Available gasses: N2, O2

Tube cleaning with tri Typical application: Oxidation of Si wafers Specimen: 100 mm Si wafers, with a max of 15 wafers Data/spectra recording: Conditions: Introduction of 1 hour

CMOS compatible Remarks: Limited access, ask contact person Reservation needed: Yes Room number: CR 125 C Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: DCA 600 MBE Apparatus t ype: DCA 600 MBE/UHV Function: Deposition of thin films by evaporation Main purpose: Deposition of thin films by evaporation Main characteristics: Loadlock system with turbo and scroll pump

Background pressure loadlock: < 5e-8 Torr Process chamber with cryo- and Ti sublimation pump Background pressure process chamber: <2e-10 Ion-gun with 6kW power supply

Facilities: Built in thickness monitor

Three high temperature (2000 °C) effusion cells Two e-guns (one 3 pockets, one 4 pockets)



Specimen: Different possibilities including a bonding robot Data/spectra recording: Conditions: Vacuum course compulsory Remarks: Limited access, ask contact person

Reservation needed: No Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: J. Sanderink Phone backup: +31-(0)53-489 2474 Email: [email protected]

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Category: Deposition Reference name: E1 Multipurpose Apparatus type: Amtech Tempress omega junior (2-stack) Function: Multipurpose Ceramic Main purpose: Anneal/oxidation ceramics related (dirty) materials Main characteristics: Temperature max 1100°C Facilities: Available: H2O, O2, N2 Typical application: Specimen: 100mm wafers Data/spectra recording: Conditions: introduction ½ hour Remarks: Reservation needed: Yes Room number: CR 129 C Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: E2 Multipurpose Apparatus type: Amtech tempress omega junior (2-stack) Function: Multipurpose glass related processes Main purpose: Anneal/oxidation Pyrex wafers Main characteristics: Temperature max 1100 °C Facilities: Available: H2O, O2, N2 Typical application: Specimen: 100 mm Pyrex wafers, Data/spectra recording: Conditions: Introduction ½ hour Remarks: Reservation needed: Yes Room number: CR 129C Contact person: M.P.Groen Phone: +31-(0)53-489 5648 Email: [email protected] Backup contact person: P.W.C. Linders Email: [email protected] Phone backup: +31-(0)53-489 1053

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Category: Deposition Reference name: PECVD Apparatus type: Elektrotech Twin system PF 310 -1 Function: Chemical vapour deposition Main purpose: Deposition of silicon oxide, -nitride and -oxynitride layers by

plasma enhanced chemical vapour deposition Main characteristics: Plasma power max 600 W at 187.8 kHz, max 100 W at 13.56

MHz plasma frequency Substrate temperature 100 up to 400 °C. Layers contain hydrogen

Facilities: Available gasses: 2% SiH4 in N2, N20 and NH3 Typical application: The layers can be used for moisture barriers or optical

applications Specimen: 100 mm wafers, other substrates possible Conditions: Vacuum course; training 3 runs; 4-hours Remarks: In combination with Elektrotech Twin system PF 340 Reservation needed: Yes Room number: CR 102 A Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: P.W.C. Linders Phone backup: +31-(0)53-489 1053 Email: [email protected]

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Category: Deposition Reference name: Leybold 560 Apparatus type: Leybold-Heraeus L560 Function: Deposition of thin films by DC sputtering Main purpose: Deposition of thin films by DC sputtering Main characteristics: Pump system with turbomolecular pump

Background pressure: 2e-7 mbar Three 1.3 inch magnetron sputterguns

Facilities: Built-in thickness monitor


substrate or Integrated Circuit using a variety of (magnetic) materials, e.g., metals, semiconductors, oxides, alloys

Specimen: Different types of substrates are possible tape sputtering

possibilities (roller coater) Data/spectra recording: Conditions: Limited access, ask contact person Remarks: Thema Reservation needed: No Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: J.G.M. Sanderink Phone backup: +31-(0)53-489 2474 Email: [email protected]

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Category: Deposition Reference name: Leybold Z-400 Apparatus type: Leybold-Heraeus Z-400 Function: Deposition of thin films by RF sputtering Main purpose: Deposition of thin films by RF sputtering Main characteristics: Pump system with turbomolecular pump

Background pressure: 1e-7 mbar RF sputtering max 600 W Heated substrate holder up to 400 °C

Facilities: Three 100 mm targets

Rotating substrate holder for multilayers Bias and back sputtering Sputter gases: standard Ar,O2, other gases possible


substrate or Integrated Circuit using a variety of (magnetic) materials, e.g., metals, semiconductors, oxides, alloys

Specimen: Different types of substrates are possible Data/spectra recording: Conditions: Limited access, ask contact person Remarks: Thema Reservation needed: No Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: J.G.M. Sanderink Phone backup: +31-(0)53-489 2474 Email: [email protected]

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Category: Deposition Reference name: LPCVD CMOS Nitride Apparatus type: Amtech tempress omega junior Function: Deposition of Stoichiometric Nitride Main purpose: Deposition of Stoichiometric Nitride Main characteristics: Layers for waveguide structures

Layer thickness max. 400 nano meter Facilities: Typical application: Deposition of Stoichiometric Nitride for wave-guides Specimen: 100 mm wafers, with a max of 20 wafers Conditions: MTE workshop; vacuum course; training 3 runs, 3 times a ½

day CMOS compatible Remarks: Reservation needed: Yes Room number: RC 125 C Contact person: P.W.C. Linders Phone: +31-(0)53-489 1053 Email: [email protected] Backup contact person: E.H.J. Ruiter Phone backup: +31-(0)53-489 4009 Email: [email protected]

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Category: Deposition Reference name: LPCVD CMOS POLY Apparatus type: Amtech tempress omega junior Function: Deposition of poly silicon Main purpose: Deposition of poly silicon Main characteristics: Facilities: Typical application: Deposition of amorphous/crystalline silicon, gate MosFet,

Flash memory Specimen: 100 mm wafers, with a max of 20 wafers Data/spectra recording: Conditions: MTE workshop; vacuum course; training 3 runs, 3 times a ½

day CMOS compatible Remarks: Reservation needed: Yes Room number: CR 125 C Contact person: P.W.C. Linders Phone: +31-(0)53-489 1053 Email: [email protected] Backup contact person: E.H.J. Ruiter Phone backup: +31-(0)53-489 4009 Email: [email protected]

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Category: Deposition Reference name: LPCVD Sensor POLY Apparatus type: Amtech tempress omega junior Function: Deposition of poly silicon Main purpose: Deposition of poly silicon by LPCVD Main characteristics: Deposition temperature 650 °C

Pressure 200 mTorr Layer thickness max 1 micron Deposition rate approx. 6 nm/min

Facilities: Available gasses: SiH4, N2 Typical application: Deposition of amorphous/crystalline silicon

sacrifice layer for etching Specimen: 100 mm wafers, with a max of 25 wafers Data/spectra recording: Digital data recording Conditions: MTE workshop; vacuum course; training 3 runs, 3 times a ½

day Remarks: Reservation needed: Yes Room number: CR 125 C Contact person: P.W.C. Linders Phone: +31-(0)53-489 1053 Email: [email protected] Backup contact person: E.H.J. Ruiter Email: [email protected] Phone backup: +31-(0)53-489 4009

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Category: Deposition Reference name: LPCVD SiRN Apparatus type: Amtech tempress omega junior Function: Deposition of low stress nitride Main purpose: Deposition of silicon(oxy)nitride thin films by LPCVD Main characteristics: Deposition temperature 850 °C

Operating pressure 200 mTorr Layer thickness up to 1µm

Facilities: Available gasses: SiH2, Cl2, O2, NH3, N2 Typical application: Deposition of low stress SiN for masking material or

membranes Specimen: 100 mm wafers, with a max of 25 wafers Data/spectra recording: Digital data recording Conditions: MTE workshop; vacuum course; training 3 runs, 3 times a ½

day Remarks: Reservation needed: Yes Room number: CR 125 C Contact person: P.W.C. Linders Phone: +31-(0)53-489 1053 Email: [email protected] Backup contact person: E.H.J. Ruiter Email: [email protected] Phone backup: +31-(0)53-489 4009

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Category: Deposition Reference name: Nordiko Apparatus type: Nordiko NM2000 3-target sputtering system Function: Deposition of thin films by sputtering Main purpose: Deposition of thin films by sputtering Main characteristics: Pump system with turbo molecular pump

Background pressure: 2e-7 mbar RF sputtering up to 1.5 kW Bias and back sputtering possible Substrate heating

Facilities: Built-in thickness monitor

Three 150 mm targets Sputtering gasses: Ar and O2 / N2



Specimen: 100 mm wafers and some other substrate types, single wafer

per run Data/spectra recording: Conditions: Vacuum course; training 3 runs Remarks: Load lock Reservation needed: Yes Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: Phone backup: Email:

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Category: Deposition Reference name: Oxford PL 400 Apparatus type: Oxford PL 400 Al Ti/W Function: Deposition of thin films by sputtering Main purpose: Deposition of thin Al and TiW films by sputtering Main characteristics: Loadlock system with cryopump

Background pressure 2e-7 mbar DC power supply 8 kW 500 W RF sputter cleaning Sputtergas pressure: 6 - 15 mTorr in mbar

Facilities: Two 200 mm magnetron targets

(100% Al and TiW 20/80 at%) Sputter gas: Ar Fully automated, different programmes possible


substrate or Integrated Circuit using Al or TiW Specimen: In static operation four 100 mm wafers in one run

In dynamic operation eight 100 mm wafers in one run Data/spectra recording: Conditions: Vacuum course; training 2 runs Remarks: CMOS compatible Reservation needed: No Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: E. Ruiter Phone backup: +31-(0)53-489 4009 Email: [email protected]

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Category: Deposition Reference name: Silox Apparatus type: Atmospheric Pressure Chemical Vapour Deposition

(APCVD) Function: Main purpose: Deposition of (B- or P-doped) siliconoxide by chemical

vapour deposition Main characteristics: Substrate temperature 350 to 450 °C

Deposition rate approx. 100 nm/min Facilities: Available gases: 2% SiH4 in N2, O2, PH3 and B2H6 Typical application: Deposition of siliconoxide (undoped, B- or P-doped) Specimen: One 100 mm wafer Data/spectra recording: Conditions: Silicon course, training 2 runs

Remarks: home build Reservation needed: No Room number: CR 125 C Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: P.W.C. Linders Phone backup: +31-(0)53-489 1053 Email: [email protected]

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Category: Deposition Reference name: Sputterke Apparatus type: UT- Sputterke Function: Deposition of thin films by sputtering Main purpose: Deposition of thin films by sputtering Main characteristics: Pump system with turbomolecular pump

Background pressure: 2e-7 mbar DC power supply

Facilities: Three 2 inch homemade sputterguns

Sputter gas, Ar Substrate cooling Load lock


substrate or Integrated Circuit using a variety of sputtering materials, e.g., metals, semiconductors, oxides, alloys

Specimen: 100 mm wafers, other substrates possible; single wafer run. Data/spectra recording: Conditions: Vacuum course; training 2 runs Remarks: Home build Reservation needed: Yes Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: P.W.C. Linders Phone backup: +31-(0)53-489 1053 Email: [email protected]

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Category: Deposition Reference name: Tantaal evaporator Apparatus type: Evaporation Function: Deposition of thin films by E-gun evaporation Main purpose: Deposition of tantalum films by E-gun evaporation Main characteristics: Pump system with Turbo pump

Base pressure: <1e-7 mbar Indirect heating of the substrate possible by radiation by the tantalum source.

Facilities: Built-in thickness monitor.

Max. 4 materials per run possible; not yet allowed Typical application: Formation of a well-defined tantalum film layer on a

semiconductor substrate or Integrated Circuit. Other evaporation materials, like metals, semiconductors, oxides, alloys maybe allowed in future.

Specimen: Two substrate holders available; 3� and 100 mm wafers.

Max. six 3� wafers or four 100 mm wafers. Data/spectra recording: Residual gas analysis possible Conditions: Limited access, ask contact person Remarks: Home build Reservation needed: See conditions Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: J.G. Bomer Phone backup: +31-(0)53-489 2605 Email: [email protected]

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Category: Deposition Reference name: TEOS Apparatus type: Amtech tempress omega junior Function: Deposition of silicon oxide Main purpose: Deposition of silicon oxide using TEOS and nitrogen Main characteristics: Deposition temperature 700 °C

Operating pressure 200mTorr Layer thickness max. 1 µm Deposition rate approx. 6nm/min

Facilities: -- Typical application: Cladding layers for optical industry Specimen: 100 mm wafers, with a max of 25 wafers Data/spectra recording: Digital data recording Conditions: MTE workshop; vacuum course; training 3 runs, 3 times a ½

day Remarks: Reservation needed: Yes Room number: CR 112 B Contact person: P.W.C. Linders Email: [email protected] Phone: +31-(0)53-489 1053 Backup contact person: M.P. Groen Phone backup: +31-(0)53-489 5648 Email: [email protected]

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Category: Deposition Reference name: VSW Apparatus type: VSW Function: Deposition of thin films by RF/DC sputtering Main purpose: Deposition of thin films by RF/DC sputtering Main characteristics: Background pressure: 5e-9 mbar

RF and DC power supplies up to 500 W Direct substrate heating up to 500 °C

Facilities: UHV system with turbomolecular pump and load lock

Fully automated process control Three magnetron sputter guns with 2 inch targets (magnetic materials) Two targets can be operated simultaneously Automatic shutter system for multilayers Sputtering gases: Ar and O2


substrate or Integrated Circuit using a variety of sputtering materials, e.g., metals, semiconductors, oxides, alloys

Specimen: 75 mm wafers Data/spectra recording: Conditions: Limited access, ask contacr person Remarks: Thema Reservation needed: No Room number: CR 106 A Contact person: J.W. Mertens Phone: +31-(0)53-489 1045 Email: [email protected] Backup contact person: J.G.M. Sanderink Phone backup: +31-(0)53-489 2474 Email: [email protected]

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Category: Dry etching Reference name: Branson Barrel Apparatus type: Branson Barrel Function: Removing photoresist Main purpose: Cleaning substrates;CMOS compatible Main characteristics: Plasma power up to 600W

Substrate temperature 150 °C Operating pressure 750 mTorr

Facilities: Typical application: Removing resist Specimen: Up to twenty-five 100mm wafers Conditions: Vacuum course; 2-hours training Remarks: Reservation needed: No Room number: CR 125 C Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: R. Wolf Phone backup: +31-(0)53-489 2221 Email: [email protected]

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Category: dry etching Apparatus type: Elektrotech Twin system PF 340 Reference name: Elektrotech Twin system PF 340 Function: Reactive ion etching Main purpose: Dry etching of silicon, silicon oxide, and -(oxy)-nitride,

polymers Main characteristics: Operating pressure: 10 - 100 mTorr

Plasma power up to 300 W (13.56 MHz) Substrate holder is cooled 10 � 25 °C

Facilities: Plasma spectrum analyser for end point detection.

Available etch gases: CHF3, SF6, O2, N2, 20% CF4 in O2 Different substrate electrodes available. Different etch chambers available for different processes.

Typical application: Etching of silicon, - oxide and -(oxy)-nitride and polymers Specimen: 100 mm wafers, other substrates possible Conditions: Vacuum course; training 3 runs; 4-hours Remarks: In combination with Elektrotech Twin system PF 310-1 Reservation needed: Yes Room number: CR 102 A Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: P.W.C. Linders Phone backup: +31-(0)53-489 1053 Email: [email protected]

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Reference name: Nanotech plasmaprep 100 Apparatus type: Nanotech plasmaprep 100 Function: Oxygen plasma etching Main purpose: Single side dry etching of organic materials with an oxygen

plasma Main characteristics: High selectivity with respect to most inorganic materials

Substrate temperature: 25 to 250 °C Operating pressure: 1 to 2 mbar Plasma power up 150 W

Facilities: Standard process for photo resists (rate appr 0.3 µm/min) Typical application: Stripping of organic materials (such as resist) Specimen: 100 mm wafers, many other substrates possible Conditions: Vacuum course; training 1 run; 1 hour training Remarks: Reservation needed: No Room number: CR 102 A Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: R. Wolf Phone backup: +31-(0)53-489 2221 Email: [email protected]

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Category: Dry etching Reference name: Oxford Plasmalab 100 Apparatus type: Oxford Plasmalab 100 Function: Cryogenic reactive ion etching Main purpose: Deep silicon etching (wafer through) by Cryogenic reactive

ion etching Main characteristics: Plasma power up to 300 W at 13.56 MHz

ICP plasma power up to 1200 W at 13.56 Mhz Substrate temperature range: -150 to +200°C Background pressure 5e-6 mbar

Facilities: Available gases: SF6, CHF3, O2, Ar and N2

ICP plasma source Cryogenic cooling

Typical application: Deep silicon etching, wafer through Specimen: 100 mm wafers Conditions: Vacuum course; training 3 runs; 4 hours training Remarks: Reservation needed: Yes Room number: CR 102 A Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: P.W.C. Linders Phone backup: +31-(0)53-489 1053 Email: [email protected]

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Category: Dry etching Reference name: Plasmatherm 400 Apparatus type: Plasmatherm 400 Function: Reactive ion etching Main purpose: Dry etching of silicon oxide, and silicon nitride Main characteristics: Substrate temperature is not controlled

Plasma power up to 450 W

Facilities: Two chambers Left chamber SiO2 etching CHF3 gases Right chamber SiN etching CF4 gases

Typical application: Etching of silicon oxide and silicon nitride Specimen: Four 100 mm wafers Conditions: CMOS compatible; vacuum course; training 3 runs; 4 hours

training Remarks: Reservation needed: Yes Room number: CR 125 C Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: P.W.C. Linders Phone backup: +31-(0)53-489 1053 Email: [email protected]

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Category: Dry etching Reference name: Plasmatherm 700 Apparatus type: Plasmatherm 700 Function: Reactive ion etching Main purpose: Aluminium etching / Poly etching Main characteristics: Loadlock system

Max. plasma power: 500W at 13.56 MHz

Facilities: End point detection system Gases: Cl2, BCl3, SiCl4, N2 and O2

Typical application: Etching of Aluminium masks Specimen: 100 mm wafers Conditions: CMOS compatible; vacuum training; training 3 runs; 4 hours

training Remarks: Reservation needed: Yes Room number: CR 125 C Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: None Phone backup: Email:

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Category: Dry etching Reference name: Plasmatherm SLR 770 Apparatus type: Plasmatherm SLR 770 Function: Cryogenic reactive ion etching Main purpose: Deep silicon etching (wafer through) by cryogenic reactive

ion etching Main characteristics: Plasma power up to 500 W at 13.56 MHz

ICP plasma power up to 2000 W at 2.0 Mhz Substrate temperature range: -150 to +200 °C Background pressure 5e-6 mbar

Facilities: Available gases: SF6, C4F8, O2, Ar and N2

ICP plasma source Cryogenic cooling

Typical application: Deep silicon etching, wafer through Specimen: 100 mm wafers Conditions: Vacuum course, training 3 runs; 4 hours training Limited access, ask contact person Remarks: None Reservation needed: Yes Room number: CR 102 A Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: None Phone backup: Email:

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Category: Dry etching Reference name: Tepla 300E Apparatus type: Tepla 300E Function: Oxygen plasma etching Main purpose: Double side dry etching of organic materials such as

fotoresists in an oxygen plasma Main characteristics: Plasma power up to 600 W

Operating pressure: 0.5 Torr Substrate temperature is not controlled (~ 50 °C)

Facilities: N/A Typical application: Stripping of organic materials (such as resist) Specimen: Up to twenty-five 100 mm wafers Conditions: Vacuum course; training 1 run; 1 hour Remarks: Reservation needed: No Room number: CR 121 B Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: R. Wolf Phone backup: +31-(0)53-489 2221 Email: [email protected]

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Category: Dry etching Reference name: Ion beam etcher Apparatus type: UT ion beam etcher Function: Ion beam etching Main purpose: Dry etching of many materials with an ion beam Main characteristics: Background pressure: 1e-7 mbar

Acceleration voltage up to 1.5 kV, ion current up to 124 mA Anisotropic etching because of the shadowing effect Etching rate (20 to 200 nm/min) depending on material IBE technique has low selectivity

Facilities: Etching by inert Ar or reactive O atoms Typical application: N/A Specimen: 100 mm wafers, other substrates are possible Conditions: Vacuum course; training 3 runs; 4 hours Remarks: Home build Reservation needed: Yes Room number: CR 102 A Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: R. Wolf Phone backup: +31-(0)53-489 2221 Email: [email protected]

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Category: Implantation Reference name: Ion implanter Apparatus type: High Voltage Engineering 500 keV ion implanter Function: Implantation of ions Main purpose: Implantation of materials with high-energy ions Main characteristics: Background pressure: 1e-7 mbar

Acceleration voltage 30 - 500 keV Typical doses: 1e11 up to 1e15 per cm² Mask fotoresist

Facilities: Double-loaded ions

Implanting gases: Ar; BF3; 15% PH3 in H2; 15% AsH4 in H2 Typical application: Implantation of Si substrates with H+, B+, BF2

+, P+ and As+ Specimen: 100 mm wafers. Special substrates possible Data/spectra recording: Conditions: Vacuum course; training 5 to 10 runs Remarks: Reservation needed: Yes Room number: CR 121 B Contact person: E.H.J. Ruiter Phone: +31-(0)53-489 4009 Email: [email protected] Backup contact person: G. Boom Phone backup: +31-(0)53-489 1047 Email: [email protected]

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Category: Photo lithography Reference name: BLE gamma 60 Apparatus type: BLE gamma 60 Function: Coater and developer positive fotoresist Main purpose: Applying positive fotoresist by spinning,

Developing exposed positive fotoresist Main characteristics: Coater:

Lithographic tool Spinning speed 3000-6000 rpm Resist Arch Chemicals 907-17 Edge bead removal, backside rinsing Developer Spray/puddle development, Developing liquid: Arch Chemicals OPD4262

Facilities: Automated system for coating or developing wafers

Cassette to cassette system Typical application: Coating of wafers, developing of exposed positive fotoresist Specimen: 100 mm wafers Data/spectra recording: Conditions: NO substrate with gold layers, no double side coating

MTE workshop, training 1 run CMOS compatible Training ½ hour

Remarks: Reservation needed: No Room number: CR 117 B Contact person: H. van Vossen Phone: +31-(0)53-489 2752 Email: [email protected] Backup contact person: G. Boom Email: [email protected] Phone backup: +31-(0)53-489 1047

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Category: Photo lithography Reference name: Convac Coater Apparatus type: Convac Coater Function: Coating positive resist Main purpose: Coating positive photo resist Main characteristics: Programmable resist spinner

3 types positive photo resist 10 programs

Facilities: Typical application: Specimen: 100 mm wafers Data/spectra recording: Conditions: Training ½ hour Remarks: Reservation needed: No Room number: CR 117 B Contact person: G. Boom Phone: +31-(0)53-489 1047 Email: [email protected] Backup contact person: H. van Vossen Phone backup: +31-(0)53-489 2752 Email: [email protected]

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Category: Photo lithography Reference name: Delta 10 Apparatus type: Delta 10 Function: Coating Main purpose: Coating different types of photo resist Main characteristics: Programmable photo resist spinner

10 programs Facilities: Typical application: Spin coating of Photo resist Specimen: 100 mm wafers Data/spectra recording: Conditions: Training ½ hour Remarks: Reservation needed: No Room number: CR 112 B Contact person: G. Boom Phone: +31-(0)53-489 1047 Email: [email protected] Backup contact person: H. van Vossen Phone backup: +31-(0)53-489 2752 Email: [email protected]

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Category: Photo lithography Reference name: Delta 20 Apparatus type: Delta 20 Function: Coating Main purpose: Coating SU-8 Main characteristics: Programmable resist spinner

Storage of programs Facilities: Typical application: Specimen: 100 mm wafers Data/spectra recording: Conditions: Training ½ hour Limited access, ask contact person Remarks: Reservation needed: Room number: CR 112 B Contact person: G. Boom Phone: +31-(0)53-489 1047 Email: [email protected] Backup contact person: H. van Vossen Phone backup: +31-(0)53-489 2752 Email: [email protected]

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Category: Photo lithography Reference name: Delta 36 Apparatus type: Delta 36 Function: Mask processor Main purpose: Wet chemical processing/etching of masks Main characteristics: Facilities: Typical application: Specimen: 125 mm x 125 mm square masks Data/spectra recording: Conditions: Operated only by:

H. van Vossen A. Kooij

Remarks: Reservation needed: See conditions Room number: CR 117 B Contact person: H. van Vossen Phone: +31-(0)53-489 2752 Email: [email protected] Backup contact person: A. Kooij Email: [email protected] Phone backup: +31-(0)53-489 2668

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Category: Photo lithography Reference name: EVG 620 Apparatus type: EVG 620 Function: Mask aligner Main purpose: Photo lithography for thin film structuring Main characteristics: UV-source near UV, appr. 12mW/cm² Facilities: Hard/soft, vacuum contact options

Proximity exposure Backside alignment option

Typical application: Exposure of fotoresist,

Wafer bonding Double sided exposure

Specimen: 100 mm wafers Maximum thickness (substrate and mask):

5mm Data/spectra recording: Conditions: MTE-Workshop, training 1 run; training 1.5 hours Remarks: Reservation needed: No Room number: CR 117 B Contact person: H. van Vossen Phone: +31-(0)53-489 2752 Email: [email protected] Backup contact person: G. Boom Email: [email protected] Phone backup: +31-(0)53-489 1047

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Category: Photo lithography Reference name: Gyrset RC5 Apparatus type: Gyrset RC5 Function: Coating polymers Main purpose: Coating polymers, Su8 optional Main characteristics: Programmable spinners Facilities: Typical application: Specimen: 100 mm wafers Data/spectra recording: Conditions: Training ½ hour Limited access, ask contact person Remarks: Thema Reservation needed: No Room number: CR 112 B Contact person: H. van Vossen Phone: +31-(0)53-489 2752 Email: [email protected] Backup contact person: Email: Phone backup:

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Category: Photo lithography Reference name: Gyrset RC8 Apparatus type: Gyrset RC8 Function: Coating positive resist Main purpose: Spinning positive photo resist Main characteristics: Programmable spinner

Square substrates Facilities: Typical application: Specimen: 100 mm wafers and 125 mm x 125 mm square wafers Data/spectra recording: Conditions: Training ½ hour Limited access, ask contact person Remarks: Reservation needed: Can only be used after consultation Room number: CR 117 B Contact person: H. van Vossen Phone: +31-(0)53-489 2752 Email: [email protected] Backup contact person: G. Boom Email: [email protected] Phone backup: +31-(0)53-489 1047

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Category: Photo lithography Reference name: Headway spinner Apparatus type: Headway spinner Function: Coating resist Main purpose: Spinning of positive photo resist Main characteristics: Spin speed up to 6000-rpm

Max spinning time 120 seconds Two-stage acceleration

Facilities: Typical application: Specimen: 100 mm wafers Data/spectra recording: Conditions: MTE-workshop, training 1 run Remarks: Reservation needed: No Room number: CR 112 B Contact person: G. Boom Phone: +31-(0)53-489 1047 Email: [email protected] Backup contact person: H. van Vossen Phone backup: +31-(0)53-489 2752 Email: [email protected]

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Category: Photo lithography Reference name: Heidelberg Instruments DWL 2.0 Apparatus type: Heidelberg Instruments DWL 2.0 Function: Mask generator Main purpose: Creation of masks by laser beam pattern generation Main characteristics: Smallest line width: 1.5 micron

Address grid: 0.25 micron Alignment accuracy: 70 nm

Facilities: Masks can be:

Dark field (inside white) Bright field (inside black) Mirroring

Typical application: Processing of chromium masks Specimen: 100 x 100 mm and 125 x 125 mm chromium masks Data/spectra recording: Conditions: Operated only by:

H. van Vossen A. Kooij

Remarks: See conditions Reservation needed: Room number: CR 117 B Contact person: A.Kooij Phone: +31-(0)53-489 2668 Email: [email protected] Backup contact person: H. van Vossen Phone backup: +31-(0)53-489 2752 Email: [email protected]

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Category: Photo lithography Reference name: Karl Süss Mask aligner MA55 Apparatus type: Karl Süss Mask aligner MA55 Function: Mask aligner Main purpose: Photo lithography for thin film structuring Main characteristics: UV-source near UV approx. 9mW/cm²

Exposure time up to 15 min. Facilities: Contact, hard contact, vacuum contact options

Manual activation of the lamp Typical application: Align + exposure of fotoresist Specimen: 100 mm wafers Max substrate thickness: 4.5 mm Data/spectra recording: Conditions: MTE-Workshop Remarks: Reservation needed: No Room number: CR 117 B Contact person: H. van Vossen Phone: +31-(0)53-489 2752 Email: [email protected] Backup contact person: G. Boom Email: [email protected] Phone backup: +31-(0)53-489 1047

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Category: Photo lithography Reference name: Tempress Mask Cleaner Apparatus type: Tempress Mask Cleaner Function: Cleaning and drying of masks Main purpose: Cleaning and drying of masks Main characteristics: High pressure DI water cleaning Facilities: Typical application: Specimen: up to 125 x 125 mm masks Data/spectra recording: Conditions: Training ½ hour Limited access, ask contact person Remarks: Reservation needed: Yes Room number: CR 102 A Contact person: A.Kooij Phone: +31-(0)53-489 2668 Email: [email protected] Backup contact person: H. van Vossen Phone backup: +31-(0)53-489 2752 Email: [email protected]

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Category: Dry etching Category: Preparation Reference name: Heraeus vacuum oven Apparatus type: Heraeus vacuum oven Function: Vacuum annealing Main purpose: Annealing of materials by heating in vacuum Main characteristics: Pressure: 1e-2 mbar

Temperature up to 300 °C Facilities: Nitrogen flow possible Typical application: Annealing of polyimide Specimen: 100 mm wafers, other substrates possible Conditions: Training 1 run; 1 hour training Remarks: Reservation needed: No Room number: CR 102 A Contact person: G.P.M. Roelofs Phone: +31-(0)53-489 3860 Email: [email protected] Backup contact person: R. Wolf Phone backup: +31-(0)53-489 2221 Email: [email protected]

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Category: Wet etching Reference Name: KOH 1 Apparatus type: KOH 1 Function: Silicon etching Main purpose: Wet Chemical An-isotropic Silicon etching Main characteristics: Standard, which means,

Temperature 75 °C Concentration Solution 25 W % KOH

Facilities: Thermostatic Bath Typical application: Etching through the wafer

Etching Membranes Specimen: 100 mm wafers

Other substrates possible after discussion Conditions: 1 hour training Remarks: none Reservation needed: Yes Room number: CR 102A Contact person: S. Geerdink Phone: +31-(0)53-489 5622 Email: [email protected] Backup contact person: G. Roelofs Phone backup: +31-(0)53-489 3860 Email: [email protected]

Version 1.1 (9-10-2002) 76

Category: Wet etching Reference Name: KOH 2 Apparatus type: KOH 2 Function: Silicon etching Main purpose: Wet Chemical An-isotropic Silicon etching Main characteristics: Standard, which means,

Temperature 75 °C Concentration Solution 25 W % KOH



Other substrates possible after discussion Conditions: 1 hour training Remarks: none Reservation needed: Yes Room number: CR 102A Contact person: S. Geerdink Phone: +31-(0)53-489 5622 Email: [email protected] Backup contact person: G. Roelofs Phone backup: +31-(0)53-489 3860 Email: [email protected]

Version 1.1 (9-10-2002) 77

Category: Wet etching Reference Name: KOH 3 Apparatus type: KOH 3 Function: Silicon etching Main purpose: Wet Chemical An-isotropic Silicon etching Main characteristics: Experimental which means,

Another temperature than Standard Another concentration of the solution than Standard



Other substrates possible after discussion Conditions: 1 hour Remarks: none Reservation needed: Yes Room number: CR 102 A Contact person: S. Geerdink Phone: +31-(0)53-489 5622 Email: [email protected] Backup contact person: G. Roelofs Phone backup: +31-(0)53-489 3860 Email: [email protected]

cleanroom equipment overview - universiteit twente · version 1.1 (9-10-2002) 4 category: back-end...

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