2001 technology of materials, lasers, semiconductors, superconductors

technology of materials, lasers, semiconductors, superconductorsV 1500

18 - 216Plasma-Assisted MOCVD Growth of Superconducting NbN ThinFilms Using Nb Dialkylamide and Nb Alkylimide Precursors. —Compound (IIIb) is characterized by single crystal XRD. It crystallizes in themonoclinic space group P21/c with Z = 4. The precursor complexes (IIIa–c)and Nb(NEt2)4 are used to grow high-quality superconducting NbN thin filmsat low temperatures in a pulsed organometallic beam epitaxy reactor using aN2H4 plasma (85–135 ◦C precursor reservoir temp., 750 ◦C substrate temp., Hecarrier gas). The obtained films are characterized by XRD, SEM, and scanningAuger spectroscopy. The highest critical temperature of 12.9 K is achievedwith an annealed film grown from Nb(NEt2)4. — (LIU, XIANG; BABCOCK,JASON R.; LANE, MELISSA A.; BELOT, JOHN A.; OTT, ANDREW W.;METZ, MATTHEW V.; KANNEWURF, CARL R.; CHANG, ROBERT P. H.;MARKS, TOBIN J.; Chem. Vap. Deposition 7 (2001) 1, 25-28; Dep. Chem.,Northwest. Univ., Evanston, IL 60208, USA; EN)

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