Dielectric propertiesD 9000 DOI: 10.1002/chin.201116006

Low-Energy Path to Dense HfO2 Thin Films with Aqueous Precursor. — High-quality, smooth and dense HfO2 thin films are deposited by spin coating using an aqueous H2O2/HNO3 solution of the precipitate obtained from an aq. pH 8.5 solution of HfOCl2 and NH3 as a precursor. The films are characterized by XRD, FTIR, SEM, and X-ray reflectivity. Dielectric properties are evaluated through integration of the films into capacitors and thin film transistors. The performance as capacitor dielectrics is characterized by leakage current densities <10 nA/cm2 (at 1 MV/cm) and breakdown fields up to 5.5 MV/cm. The optical and dielectric properties of the films substantively exceed those produced by any other solution technique and in most respects rival those produced via advanced vapor methods, enabling their use as a high-performance dielec-tric. — (JIANG, K.; ANDERSON, J. T.; HOSHINO, K.; LI, D.; WAGER, J. F.; KESZLER*, D. A.; Chem. Mater. 23 (2011) 4, 945-952, http://dx.doi.org/10.1021/cm102082j ; Dep. Chem., Oreg. State Univ., Corvallis, OR 97331, USA; Eng.) — W. Pewestorf

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