cha e-beam evaporator operation manual - uta · 2016. 8. 18. · the preapproved list of deposition...

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CHA ELECTRON BEAM EVAPORATOR SYSTEM OPERATING MANUAL Version: 2.0 August 2016 UNIVERSITY OF TEXAS AT ARLINGTON Nanotechnology Research Center TABLE OF CONTENTS

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Page 1: CHA e-beam evaporator operation manual - UTA · 2016. 8. 18. · The preapproved list of deposition materials includes Al, Ti, Ni, Ge, Au, Ag, Pt, Cr, Cu, Zn, Pd, In, & Sn. Any other

CHA ELECTRON BEAM EVAPORATOR SYSTEM OPERATING MANUAL

Version: 2.0 August 2016

UNIVERSITY OF TEXAS AT ARLINGTON

Nanotechnology Research Center

TABLE OF CONTENTS

Page 2: CHA e-beam evaporator operation manual - UTA · 2016. 8. 18. · The preapproved list of deposition materials includes Al, Ti, Ni, Ge, Au, Ag, Pt, Cr, Cu, Zn, Pd, In, & Sn. Any other

1.0 DESCRIPTION..…………………………………………….…….… 3

2.0 SAFETY…................................…………………………….….... 3

3.0 REQUIREMENTS/RESTRICTIONS……….…………..…..………...... 3

4.0 STARTING THE CRYO PUMP..……………………………………… 5

5.0 LOADING A SAMPLE……………………………………………….. 7

6.0 PROGRAMMING THE XTC THICKNESS MONITOR…………………. 9

7.0 BRINGING UP THE ELECTRON BEAM FOR EVAPORATION…...….... 10

8.0 SYSTEM SHUTDOWN……………………………………..…........... 13

Page 3: CHA e-beam evaporator operation manual - UTA · 2016. 8. 18. · The preapproved list of deposition materials includes Al, Ti, Ni, Ge, Au, Ag, Pt, Cr, Cu, Zn, Pd, In, & Sn. Any other

1.0 Description

The CHA Solution Electron Beam Evaporator uses a six pocket carousel crucible selector.

The preapproved list of deposition materials includes Al, Ti, Ni, Ge, Au, Ag, Pt, Cr, Cu, Zn,

Pd, In, & Sn. Any other materials will need Nanofab management permission. Single or stack

films can be evaporated on samples or wafers up to 100mm in diameter, glass slides and small

samples are accommodated as well.

2.0 Safety

2.1.1 This machine is connected to HIGH VOLTAGE. If any SYSTEM FAULT lights come ON

call NanoFab staff immediately. Be very careful and aware of electrical hazards. If you

encounter any electrical malfunctions contact NanoFab staff immediately.

2.1.2 This machine uses HIGH VOLTAGE. DO NOT operate this machine with any cables

disconnected, or component enclosures/panels open.

2.1.3 This machine uses HIGH VOLTAGE. DO NOT operate this machine with any cables

disconnected, or component enclosures/panels open.

2.1.4 This machine uses water flow to prevent over heating of the cryo pump, electron beam gun

source, carousel source crucibles and quartz crystal. If you encounter any water flow

malfunctions or leaks notify NanoFab staff immediately.

2.1.5 This machine has an EMO (Emergency Off) switch/button mounted on the front panel. The

EMO switch should be pressed only in an emergency. An emergency would be fire, smoke,

electrocution hazards, and an injury to anyone using this particular piece of equipment. If

the EMO is pressed notify NanoFab staff immediately.

2.1.6 Use of sunglasses or a light filter may be required when viewing the material heating/

evaporation process to prevent eye damage

3.0 Requirements/Restrictions

3.1.1 You must be a qualified user on the CHA Solution E-beam evaporator.

3.1.2 Users must supply their own deposition supplies [Crucibles & Deposition Materials] for this

system. See the Kurt J Lesker page below (Fig. A) for more details.

3.1.3 The evaporator can be used to deposit metal or oxide film on 1”- 4” diameter wafers, glass

slides, and small samples by using the substrate holder clips. Extremely small pieces can be

processed by using longer holder clips or bonding to larger carrier wafer (bond with drop

silver paint, drop of baked photo resist, MUNG II paste or other approved bonding

material)

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4.0 System Checks

4.1.1 Before beginning a process verify that the cryo pump is at operational temperature by

checking to see if the CTI CONTROL PANEL is displaying that the cryo is ON and the

temperature is < 20K (Fig 1). If the cryo is OFF do not proceed. Contact a Nanofab staff

member for assistance.

(Fig. 1)

5.0 Loading a Sample and Preparing for Depostion

5.1.1 Log onto the system by pressing the LOG ON button in the lower right hand corner of the

touch screen (Fig. 2). Enter “e” as the user and “cha” for the password.

Page 5: CHA e-beam evaporator operation manual - UTA · 2016. 8. 18. · The preapproved list of deposition materials includes Al, Ti, Ni, Ge, Au, Ag, Pt, Cr, Cu, Zn, Pd, In, & Sn. Any other

(Fig. 2)

5.1.2 If the system AUTO MODE indicator is green skip this step. If not then press the AUTO

MODE button (See Fig. 2). The system will automatically enter STANDBY mode. Allow

the Standby routine to complete.

5.1.3 Monitoring the touchscreen, once the Auto Mode and Standby indicators are both green

press the “Start Vent” button on the right side of the screen.

5.1.4 Allow the system to Vent until the “Vent Complete” (Fig. 3) notification window appears

on the screen. The automatic VENT routine will take approximately 5 minutes to finish.

Once complete then Press the “Standby” button located in the VENT COMPLETE

window.

Page 6: CHA e-beam evaporator operation manual - UTA · 2016. 8. 18. · The preapproved list of deposition materials includes Al, Ti, Ni, Ge, Au, Ag, Pt, Cr, Cu, Zn, Pd, In, & Sn. Any other

(Fig. 3)

5.1.5 Wait until the “Standby” indicator in the upper left hand corner of the screen is once again

green and then press the “Lock” button located in the center of the screen (Fig. 4). This will

unlock the door and allow you to open the chamber door.

(Fig. 4)

5.1.6 Move the chamber door to its fully open position and allow the latching mechanism (Fig. 5)

to engage and hold the door open while you are loading/unloading the chamber..

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(Fig. 5)

5.1.7 Remove the installed wafer carrier from the chamber. Depending on the prior deposition

configuration the system could either be set up with the standard rotating carrier or with the

planetary rotating carrier. To remove the standard rotating carrier (Fig. 6a) lift the front

most retaining pin and pull the carriage assembly towards you. To remove the planetary

deposition carrier (Fig. 6b) grab the main support bar and lift the whole assembly straight

up out of the locking mechanism.

(Fig. 6a)

(Fig. 6b)

5.1.8 If the wrong deposition carrier assembly for your process was installed into the chamber

contact a Nanofab staff member to set the system up for the alternate deposition carrier that

you require.

5.1.9 Mount your wafers or sample carrier into the desired deposition carrier by installing the

wafer face down into one of the wafer holder pockets (Fig. ). It is best to hold the wafer by

Page 8: CHA e-beam evaporator operation manual - UTA · 2016. 8. 18. · The preapproved list of deposition materials includes Al, Ti, Ni, Ge, Au, Ag, Pt, Cr, Cu, Zn, Pd, In, & Sn. Any other

the flat as it allows you to remove the tweezers without pulling the wafer back out of the

carrier pocket.

(Fig. )

5.1.10 Latch the two spring loaded wafer retaining clips (Fig. ) by pressing them down and

twisting the clip over the wafer. Release the spring loaded clip and the wafer should now be

secure in the pocket.

(Fig. )

5.1.11 Reinstall the deposition carrier containing your sample or wafer back into the system.

Ensure the carrier is fully pushed the system and the locking mechanism has closed behind

it.

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(Fig. )

5.1.12 Now you must install the crucibles containing your evaporative materials into the hearth at

the designated positions for those materials. Press the button on the touchscreen labeled

“SHUTTER”. When this button turns green the shutter will be open.

(Fig. )

5.1.13 Now to view the current crucible pocket location or rotate to another pocket location press

the button “Select Pocket” button (See. Fig. ) near the center of the touchscreen. This will

open the “MANUAL POCKET ROTATION” window (Fig. ).

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(Fig. )

5.1.14 Place your crucibles into the pocket that corresponds with the films you will be using.

These films are automatically selected by the process you will select from the deposition

controller. If you are unsure of which pocket location your materials should go then STOP

and ask a Nanofab staff member for assistance. ***Failure to put the materials in the

proper pocket to match the process selected can result in damage to the system.***

(Fig. )

5.1.15 Once all of your deposition crucibles have been installed CLOSE the shutter by pressing

the shutter button (See. Fig. ) and then ensure the button turns red.

5.1.16 Release the spring loaded Door Latch by lifting it slightly with your fingers (Fig. ). The

door will begin to close on its own once the door has been unlatched. After the door moves

slightly remove your fingers from the latch and close the door fully.

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(Fig. 12)

5.1.17 Press the LOCK button near the center of the touchscreen (See Fig. 7).

5.1.18 Press the START PUMPDOWN button on the right hand side of the touchscreen (See.

Fig. )

5.1.19 You must now wait until the “PUMPDOWN COMPLETE” notice comes up on the

screen (Fig. ). This pumpdown period depends on how long you had the system open and

what sample materials you installed into the chamber. Typical pumping times range from

45 – 90 minutes until completion. Once the pumpdown is complete you have two options,

ABORT which will put the system back in Standby or AUTORUN which will begin an

automated deposition process. Do not select AUTORUN unless you have selected and

verified your process and film thicknesses from the deposition controller.

(Fig. )

5.1.20

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6.0 Programming the STC-2000 deposition controller

The STC-2000 is an automated process controller. It controls all aspects of the evaporation on this system including, crucible selection, film thickness, e-beam gun ramping and shutter open/close, deposition rate.

Please refer to the following excerpts from the manufacturers quick start manual for STC-2000 programming information.

This guide is a supplement to the STC-2000A User’s Manual (518-031).

Terms and definitions:

The STC-2000A provides both manual and automatic control of single- or multi-layer film deposition. Manual mode is often used to set up the system in order to run unattended in the fully automatic mode.

A film is a set of user-programmable deposition-related parameters (density, Z-ratio, map, etc.) Typically, one material deposition is accomplished per film. The STC-2000A can store up to 50 films. The active film is the film that will run when the start sequence is initiated. A process is a set of multiple films, or “layers”. The map specifies the configuration of the physical plant (number of sensors, selection of source type, which crystal to read, which gun to use, etc.) Up to 30 maps can be stored to allow multiple system configurations. Each film specifies which map to use.

WARNING: Improper operation of this equipment could cause

equipment damage or personal injury.

Read the safety precautions in the user’s manual prior to operating this equipment.

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The STC-2000A has two basic process control modes: Sequencing mode and Non- sequencing mode. Non-sequencing mode is used to run a single user-selected film. Sequencing mode is used to run a process (a series of films) for multiple materials or layers.

The Runtime or Status Screen is the screen normally displayed during operation. You may return to the Status Screen at any time by pressing the “Status” button.

Screen navigation (using fixed keys and touch screen):

Arrow keys on menu screens allow scrolling to unseen list parameters.

BYE is a screen or function exit.

EDT is edit.

GO2 any selects another film, map or process.

STATUS exits the menu system and returns the Run-time Screen.

STOP

START

MANUAL

instruments

STATUS

MENU

HAND CONTROLLER

ZERO

STC-2000A THICKNESS / RATE CONTROLLER

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Navigation of Status Screens:

The Status button

Press

STATUS

button

Press

STATUS

button

Press

STATUS

button

Press

STATUS

button

1st Status Screen

2nd Status Screen

3rd Status Screen

4th Status Screen

The 1st

Status Screen displays information related to the current deposition.

The 2nd

Status Screen

and thickness in a large font for distant viewing.

The 3rd

Status Screen displays gun information.

displays sensor information

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Status Screen

Menu Programming: Sequencing Mode

Press fixed MENU key

Review Film

Number

Service

Review Source

Sensor (SS) Map

Next Process

Process

Accounting

Options/

Information/

Diagnostics

Review

Processes

System

Configuration

Communications

Set-up

I/O Set-up:

Memory

I/O Set-up:

Operations Mode

I/O Set-up:

Change

I/O Set-up:

Edit

Menu Screen

Executive Menu

I/O Set-up Menu

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Basic Operation Flow Chart: To perform a practice run of X thickness At X rate:

* This can only be done when unit is idle.

REVIEW

PROCESSES

menu:

Enter parameters,

select Film

NEXT Process

menu:

Enter

Process ID no.*

REVIEW

SOURCE

SENSOR (SS)

MAP menu:

Select output,

tooling and sensor

values

REVIEW FILM

Enter Film

parameters, select

MAP

Make back panel

connections,

check safety

interlocks and

cooling water

Return to

Run-time Screen

(Status key)

Power On

Ready to Start

Press MENU key

Press "Review SS

Map"

Set SOURCE

MAX PWR to

100%, and CH1

START MODE to

"ACTIVE"

Press BYE to

return to Menu

Screen

FILM"

VALUE to 50%,

PWR RAMP1

TIME to 00:11,

PWR SOAK1

TIME to 00:11,

and MAX

POWER LIMIT to

100%

Press BYE to

return to Menu

Screen

Press "REVIEW

PROCESSES"

Confirm MODE is

AUTO, and THICK

(KA) is 0.111

Press STATUS

Run-time Screen

Unit power on, connected

Press START key to initiate start

sequence

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To switch from Sequencing to Non-sequencing or vice-versa:

Press the fixed “Menu” button to view the Menu screen.

Press “Service” on the touchscreen to view the Service menu.

Non-sequencing: Sequencing:

Press to toggle

Press “Accept” on the touchscreen to accept the change. The STC-2000A will automatically restart after the change is accepted. (Note: “Accept” button appears only for a status change.)

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To edit film parameters:

Press the fixed “Menu” button to view the Menu screen.

Press “Review Film” on the touchscreen to view the film parameter edit screen.

Select "GO2 Flm" on the touchscreen, and enter the number of the film you want to review/edit (select the number using the touchscreen keypad, then select "Enter".)

When the film numbers next to "Edit" and "Active" at the top of the screen match, you are editing the active film.

Note: Changes made to the active film will change a running process

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7.0 Running an Automatic Process Sequence

7.1.1 There are two ways to run an automatic process on the system. The first is after you

have completed the START PUMPDOWN

(Fig. 14)

7.1.2 Turn on the interlock key by turning the key from OFF to MAN (Fig. 15), Do not

turn the key all the way to AUTO or the system will not function properly. All

of the yellow interlock lights will turn on and the green READY light will be on. If

all the lights are not on call NanoFab staff.

(Fig. 15)

7.1.4 Turn SOURCE 1 emission control knob on the front of the Interlock panel (See. Fig.

14) to 0 by turning knob CCW until it stops.

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DOCUMENT: CHA SOLUTION E-BEAM EVAPORATOR SYSTEM OPERATING PROCEDURES Version: 1.0

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7.1.5 Turn the REMOTE BEAM CONTROLLER (Fig. 16) emission current dial to 0

by turning the EMISSION current potentiometer fully CCW until it stops at

approximately 0.

(Fig. 16)

7.1.6 Turn on MAINS power by moving switch/breaker to ON position for the SEB-15 e-

beam power supply (Fig. 16). If any ARC FAULT, OVERLOAD, SYSTEM

FAULT lights go on turn OFF MAINS switch/breaker and call NanoFab staff

immediately.

Only the MAINS ON and INTERLOCK lights should be on.

7.1.7 Turn on high voltage by pressing the white HV ON push-button switch for the SEB-

15 (Fig. 17). The HV ON light will turn on. If any ARC FAULT, OVERLOAD, or

SYSTEM FAULT lights go on press the green HV OFF push-button switch, turn

OFF MAINS switch/breaker and call NanoFab staff immediately.

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DOCUMENT: CHA SOLUTION E-BEAM EVAPORATOR SYSTEM OPERATING PROCEDURES Version: 1.0

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(Fig. 17)

7.1.8 If necessary adjust the OUTPUT VOLTAGE to 9.0 KV by turning output voltage

adjust potentiometer (See Fig. 16) CW or CCW until the display shows 9.0 KV.

7.1.9 While watching the X – Y Beam sweep controller Green LED readouts, adjust both

the amplitude and position potentiometers on the Remote Beam Controller to be

centered (position pot) and approximately 3 to 5 LED’s in width (Amplitude pot).

7.1.10 Check to ensure the Remote Emission Controller emission current is at 0 by rotating

emission potentiometer CCW until it stops @ 0.

7.1.11 Turn on the Remote Emission Controller by pressing the EMISSION ON push-

button switch. The ON light will turn red.

7.1.12 Move the Source shutter switch to its OPEN position (Fig. 18).

(Fig. 18)

7.1.13 Slowly increase emission current by rotating EMISSION potentiometer CW to a

setting of 2.5 – 3.0 while looking through the source view port window to monitor

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DOCUMENT: CHA SOLUTION E-BEAM EVAPORATOR SYSTEM OPERATING PROCEDURES Version: 1.0

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the initial heating process (about 15° downward). If necessary use the filter lens

when viewing the material heating/evaporation process to prevent eye damage.

7.1.14 While looking into the viewport window you should be able to see the blue e-beam

spot or the material glowing hot near the center of the crucible. Make fine centering

adjustments to the Horizontal and Lateral Position potentiometers.

7.1.15 On the Remote Beam Controller increase/decrease the Horizontal Amplitude

potentiometer CW to generate an optimal e-beam sweep without encroaching on the

crucible edge.

7.1.16 On the Remote Beam Controller increase/decrease the Lateral Amplitude

potentiometer CW to generate an optimal e-beam sweep without encroaching on the

crucible edge.

7.1.17 On the Remote Beam Controller increase/decrease the Horizontal and Lateral

Frequency potentiometers CW to achieve an optimum sweep frequency/speed.

7.1.18 Very slowly increase emission current by rotating EMISSION potentiometer CW.

When you have the desired evaporation rate (2 - 3A/sec is typical) then press the

ZERO button on the Inficon XTC thickness monitor (See. Fig. 8).

7.1.18 Open the Substrate shutter (Fig. 19) to begin the deposition.

(Fig. 19)

7.1.19 When you have deposited the desired thickness as shown on the Inficon XTC

thickness monitor (See Fig. 12), quickly close both the SOURCE AND

SUBSTRATE shutter’s by moving both switches to their closed position’s (See Fig.

18).

7.1.20 Begin the emission current shut down by SLOWLY decreasing emission current by

rotating EMISSION potentiometer CCW until it stops @ 0. This process should take

a couple of minutes to allow the crucible and filament sufficient time to cool slowly.

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7.1.21 Turn off the Remote Emission Controller by pressing the EMISSION OFF push-

button switch. The OFF light will turn green.

7.1.22 Turn off high voltage by pressing the green HV OFF push-button switch (SEB-06)

and then turn off the Mains power by moving the breaker to the OFF position.

7.1.23 Then turn off the X – Y Beam sweep controller and turn the Interlock key to the

“OFF” position.

7.1.24 If you will be depositing another film, rotate the SOURCE SELECTOR KNOB

(See Fig. 9) to the desired material and then proceed from Step 6.1.3.

8.0 System Shutdown

8.1.1 If the substrate was heated then you must wait until the temperature displays < 50

deg before proceeding to the next step.

8.1.2 Close the HIVAC valve (See Fig. 7) and wait 5 minutes before proceeding to the

next step, this allows the crucible sufficient time to cool down.

8.1.3 Open the VENT valve (See Fig. 7) and monitor the CHAMBER

THERMOCOUPLE gauge display (See Fig. 6). Allow the chamber pressure to

rise until it indicates approximately ATM (See Fig. 6)

8.1.4 Press the RAISE button (See Fig. 7) to raise the bell jar. Once the bell jar has fully

raised close the VENT valve.

8.1.5 Remove the Sample Carrier from the system, unload your sample(s) from the plate

and then reinstall the empty sample plate into the system.

8.1.6 Press the LOWER button (See Fig. 7) to lower the bell jar until it stops moving.

Move the Raise/Lower switch back to the middle position.

8.1.7 Open the CHAMBER ROUGH valve (See Fig. 7) and monitor the CHAMBER

THERMOCOUPLE gauge display (See Fig. 11) allowing the chamber pressure to

drop to < 100mT before proceeding.

8.1.8 Close the CHAMBER ROUGH valve and then turn the MECHANICAL PUMP

switch off (See Fig. 4).

8.1.9 If another user is going to use the CHA E-beam system after you then skip this step.

If no other user will be running the CHA E-beam system then proceed. On the Cryo

Pump Controller (See Fig. 5) turn the CRYO-PUMP power switch OFF.

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8.1.10 Rotate the CHAMBER COLD CATHODE (See Fig. 12) controller knob to the

OFF position.

8.1.11 Switch the system controller from MANUAL to the OFF position (see Fig. 1).

8.1.12 Pick up your belongings, clean and organize the table and complete your log entry in

the system logbook.