central reference design · overview of central reference • three main blocks – (modified) bgp...
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Central Reference Design
Ray XuJuly 25, 2019
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Outline
• Overview of Central Reference
• Overview of Existing BGP
– Modifications
• Overview of RDAC
• Overview of BGP-to-1.1V Amplifier
• Overview of Output Section
• Overall Results
• Design Concerns
• Summary
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Overview of Central Reference
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Overview of Central Reference
• Three main blocks
– (Modified) BGP
– RDAC’s
– BGP-to-1.1V amplifier
• Main modes of operation
– VREFN = BGP, VREFP=BGP (good PSRR, good noise)
– VREFN = RDAC, VREFP = RDAC (bad PSRR, good noise)
– VREFN&VREFP = overridden off-chip
• Operational redundancy in mind
• Output impedance of VREF’s: 40 kOhms
– Open-loop (replica) output4
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Overview of BGP
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Overview of BGP
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Overview of BGP
• Any internal modification = redesign
• Ground-referenced, single-ended
– Original designers have output decoupled to GND
– PMOS VDSAT is 300mV: cannot obtain 1.1V
• IP from Italian group
• Three modifications to BGP (by bringing out specific wires)
– External startup
– External current source
– BGP adjustability
• LVS & DRE errors due to use of donut transistors
– Understood and will be waived7
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BGP External Startup
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BGP External Startup
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BGP startup circuit disconnected, only for sim purposes
BGP startup circuit disconnected, only for sim purposes
Startup pulse
100 mV nominal
3x “surge”
Simulated across all BGP options and 5 corners
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BGP Current Source
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BGP Current Source
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PMOS mirror internal to BGP
PMOS mirror outside of BGP
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BGP Current Source
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Nominal: 50uA
Green: Full (+8 steps) up Adjustment
Red: neutral adjustment
Yellow: Full (-8 steps) down Adjustment
X-axis: corner
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BGP Adjustability
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Nominal: 100 mV
Green: Full (+8 steps) up Adjustment
Red: neutral adjustment
Yellow: Full (-8 steps) down Adjustment
X-axis: corner
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Overview of RDAC
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Alternative to BGP VREFN and VREFP using off-chip bias current
Example of low-side RDAC used to obtain RDAC_VREFN and RDAC_VCM.
Binary-weighted resistor string w/ 50uA DC bias.
High-side complement used to obtain RDAC_VREFP
This is how on-chip VCM is obtained in all cases.
RDAC current source may be derived from external bias or bandgap current source.
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Overview of RDAC
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Resistor string, distributed by common centroid per segment
Switches (200u/60n each)
Wire matrix
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Overview of RDAC
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Low-side RDAC sweep of digital code versus BGP adjustment and corners
Nominal: 100mV and 600mV
Step size: about 20mV per digital code
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Overview of RDAC
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High-side RDAC sweep of digital code versus BGP adjustment and corners
Nominal: 1100 mV
Step size: about 20mV per digital code
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Overview of Amplifier
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Amplifier core
Gain-boosted folded cascode
Re-used, with minor changes, from amplifier in CV2 test structures; proven silicon
80 dB open loop gain
Optimized for low-VCM input
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Overview of Amplifier
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Output stage of amplifier
Replica common-source w/ 90 Ohm high-side resistor.
Resistive load allows output to go all the way to positive rail
Gain adjustable in ~ 20mV output steps using binary-weighted resistor string
Replica output to have an open-loop output; mitigates stability issues
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Overview of Amplifier
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Programmable gain resistor string
Amplifier core
Output Stage
Output stage wiring, poly resistor, and power mesh oversized above electromigration standards in case of misconfigured state
(Low/misconfigured Vout pulls up to 13 mA thru 90 Ohm resistor)
Power mesh
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Overview of Amplifier
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Sweep of VREFP across gain code and corners, BGP adjustment
VREFP output step: approx 20mV per digital code
Nominal: 1100 mV. Phase margin: 65 ~ 75 deg across corners
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Overview of Output Section
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Similar structure for VREFP outputSelection switch: VREFN={BGP or RDAC} or high-Z; Amplifier input={BGP or RDAC}VREFP={Amp or RDAC} or high-ZVCM=RDACOutput resistor: 44 kOhm needed to filter noise in combo with capacitor
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VREFP-VREFN PSRR
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BGP → Amplifier. No external cap (worst case). VREFP Single-endedAC diff sources: VDD and GND; AC diff probe: VREFP-VREFNSchematic, TT
< -40dB systematic differential PSRR!(-20 dB in layout)
Includes both contributions from VDD and GND
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Summed Noise (1Hz→10GHz)
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VREFN: BGP VCM: RDAC VREFP: BGP→Amplifier
Dominant noise source is 1/f noise of BGPRelies on external cap (bondwire is modeled; ideal ext cap)
Schematic, TT (+/- 10uVrms max across corners)
External cap→ None
(6pF pad+pkg)100pF 1nF 10nF 100nF 1uF
VREFN10.60
(uVrms)10.36 9.34 8.68 7.90 7.39
VCM 71.73 (no off-chip filtering)
VREFP 102.2 92.04 77.27 61.83 38.96 11.14
VREFP-VCM 97.77 90.68 85.32 81.44 75.99 72.3
VCM-VREFN 72.08 71.64 70.87 70.06 69.19 68.91
VREFP-VREFN 95.62 86.25 72.63 58.31 37.25 13.03
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Design Concerns
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• Leakage current
– Output of all VREF’s are high impedance (40 kOhm)
– Outputs can only be connected to mosfet gate and metal capacitors only! (to name a few)
– Outputs cannot be directly connected to MOS decap nor resistive loads
• Differential stability
– Ensure caps to ground >> caps between VREFP&N
– Bulk capacitance will be placed off-chip as well
– High-impedance of BGP output + amplifier topology makes differential decap look like a weak feedback loop
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Design Concerns
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• Kickback
– Please place as much metal capacitors in the channel to bypass VREFP,N to GND to mitigate kickback effect coming from reference buffers
• PSRR
– Ensure PSRR of VREFP and VREFN reference buffers are near equal to ensure PSRR of (VREFP-VREFN) does not worsen
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Summary
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• Central reference block provides VREFP,N,CM and bias currents
• Multiple ways to tune BGP
• Multiple ways to get VREFP,N from BGP and/or bias current
• All else fails: external bias current, over-ride voltages directly from off-chip
• Off-chip option to receive and distribute bias current
• All controls are independent of each other