cbse class 12 outside physics 2005
TRANSCRIPT
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8/11/2019 CBSE Class 12 Outside Physics 2005
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PHYSICS 2005
Q. 1.An electric dipole of dipole moment 20, X 10-6C.m is enclosed by a closed surface. What is
the net flux comin out of the surface! 1
Q. 2. An electron beam pro"ected alon #X-axis, experiences a force due to a manetic field alon
the #$-axis. What is the direction of the manetic field! 1
Q. 3. %he po&er factor of an a.c. circuit is 0.'. What &ill be the phase difference bet&een (oltaeand current in this circuit! 1
Q. 4.)lectrons are emitted from a photosensiti(e surface &hen it is illuminated by reen liht but
electron emission does not ta*e place by yello& liht. Will the electrons be emitted &hen the
surface is illuminated by +i red liht, and +ii blue liht. 1
Q. 5. What should be the lenth of the dipole antenna for a carrier &a(e of reu- ency / X 1
3! 1
Q. 6. 4efine 5electric line of force5 and i(e its t&o important properties. 2
Q. 7. +a Why does the electric field inside a dielectric decrease &hen it is placed in an external
electric field!
+b A parallel plate capacitor &ith air bet&een the plates has a capacitance of p. What &ill be the
capacitance if the distance bet&een the plates he reduced by half and the space bet&een them is
filled &ith a substance of dielectric constant 76! 2
Or
are *ept at the (ertices, A, 8 and C respecti(ely of
an euilateral trianle of side 20 cm as sho&n in the fiure. What should be the sin and manitude
of the chare to be placed at the mid-point +9 of side 8C so that the chare at A remains in
euilibrium! 2
Q. 8. 4ra& : - ; raph for ohmic and non-ohmic materials. circuit be reater than
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the applied (oltae of the a.c. source! ?ustify yourans&er. 2
Q. 12. %he imae of a candle is formed by a con(ex lens on a screen. %he lo&er half of the lens is
painted blac* to ma*e it completely opaue. 4ra& the ray diar- am to sho& the imae formation.
o& &ill this imae be different from the one obtained &hen the lens is not painted blac*! 2
Q. 13. An electric dipole is held in a uniform electric field. +1 @sin suitable diaram, sho& that it
does not undero any translatory motion, and +ii deri(e an expre- ssion for the torue actin on itand specify its direction. 3
Q. 14. A al(anometer &ith a coil of resistance 120 ohm sho&s full scale deflection for a current of
2.' mA. o& &ill you con(ert the al(anometer into an amm- eter of rane 0 to .' A! 4etermine
the net resistance of the ammeter. When an ammeter is put in a circuit, does it read slihtly less or
more than the actual current in the oriinal circuit! ?ustify your ans&er. 3
Q. 15. 4efine the term 5resisti(ity5 and &rite its B. ; . unit. 4eri(e the expression for the resisti(ity of
a conductor in terms of number density of free electrons and relaxation time. 3
r
Btate the principle of potentiometer. 4ra& a circuit diaram used to compare the e.m.f. of t&oprimary cells. Write the formula used. o& can the sensiti(ity of a potentiometer be increased!
Q. 16. )xplain, &ith the help of diaram, the principle and &or*in of an a.c.
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Q. 23. 4istinuish bet&een, analo and diital communication. Write any t&o modulation
techniues employed for the diital data. 4escribe briefly one of the techniues used. 3
Q. 24. 4ra& a schematic diaram of a sinle optical fibre structure. )xplain briefly ho& an optical
fibre is fabricated. 4escribe in brief, the mechanism of propa- ation of liht sinal throuh an
optical fibre.3
Q. 25. (a) With the help of a labelled diaram, explain the principle and &or*in of a mo(in coil
al(anometer.
(b) %&o parallel coaxial circular coils of eual radius 5>5 and eual number of turns 5E5, carry eual
currents 5;5 in the same direction and are separated by a distance 52>5. ind the manitude and
direction of the net manetic field prod- uced at the mid-point of the line "oinin their centres. 5
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(a) Btate 8iot-Ba(art5s la&. @sin this la&, deri(e the expression for the manetic field due to a
current carryin circular loop of radius 5>5, at a point &hich is at a distance 5x5 from its centre alon
the axis of the loop.
(b) %&o small identical circular loops, mar*ed +1 and +2, carryin eual currents, are placed &ith
the eometrical axes perpendicular of each other as sho&n in the fiure. ind the manitude anddirection of the net manetic field produced at the point .
Q. 26. (a) o& is a &a(efront different from a ray! 4ra& the eometrical, shape of the &a(efronts
&hen +i liht di(eres from a point source, and +ii liht emeres out of a con(ex lens &hen a point
source is placed as its focus.
(b) Btate uyens5 Frinciple. With the help of a suitable diaram, pro(e Bnell5s la& of refraction
usin uyens5 Frinciple. 5
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(a) ;n $oun5s double slit experiment, deduce the conditions for +i comstru- cti(e, and +ii
destructi(e interference at a point on the screen. 4ra& a raph sho&in (ariation of the resultant
intensity in the interference pattern aainst position 5x5 on the screen.
+b Compare and contrast the pattern &hich is seen &ith t&o coherently illuminated narro& slits in
$oun5s experiment &ith that seen for a coherently illuminated sinle slit producin diffraction.
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Q. 27. (a) 4istinuish bet&een metals, insulators and semiconductors on the basis of their enery
bands.
(b) Why are photodiodes used preferably in re(erse bias condition! A photodiode is fabricated from
a semiconductor &ith band ap of 2. e:. Can it detect a &a(elenth of 6000 nm! ?ustify. 5
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(a) )xplain briefly, &ith the help of circuit diaram, ho& : - ; characteristics of a p-n "unctiondiode are obtained ii +i for&ard bias, and +ii re(erse bias. 4ra& the shape of the cur(es obtained.
(b) A semiconductor has eual electron and hole concentration of 6 x 10Gm/. n dopin &ith
certain impurity, electron concentration increases to D X1012Gm/.
+i ;dentify the ne& semiconductor obtained after dopin.
+ii Calculate the ne& hole concentration.
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