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BFP196WNLow noise silicon bipolar RF transistor
Product description• NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion
wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components andcombines ease-of-use to stable volumes production, at benchmark quality and reliability.
Features
• For high voltage applications VCE < 12 V• Maximal power Ptot = 700 mW• Transition frequency fT = 7.5 GHz• Noise figure NFmin = 1.3 dB at 900 MHz• Easy to use Pb-free (RoHS compliant) and halogen-free industry
standard SOT343 package with visible leads 2
3
1, 4
Application• GNSS active antenna• Amplifiers in antenna and telecommunications systems• CATV• Power amplifier for DECT and PCN systems
Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
Device informationAttention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Type / Ordering code Package Pin configuration Marking Related LinksBFP196WN /BFP196WNH6327XTSA1
SOT343 1=E 2=C 3=B 4=E RLs see SOT343 Package
Preliminary datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.0www.infineon.com 2017-01-20
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.1 DC parameter table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.2 AC parameter tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.3 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.4 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 SOT343 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
BFP196WNLow noise silicon bipolar RF transistor
Table of contents
Preliminary datasheet 2 Revision 1.02017-01-20
1 Absolute maximum ratings
Table 1 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter Symbol Values Unit Note or Test conditionMin. Max.
Collector emitter voltage VCEO – 12 V Base open
Collector emitter voltage VCES – 20 V Emitter / base short circuited
Collector base voltage VCBO – 20 V Emitter open
Emitter base voltage VEBO – 2 V Collector open
DC collector current IC – 150 mA –
DC base current IB – 15 mA –
Total power Ptot – 700 mW –
Junction temperature TJ – 150 °C –
Storage temperature TStg -55 150 °C –
Attention: Stresses above the maximum values listed here may cause permanent damage to the device.Exposure to absolute maximum rating conditions for extended periods may affect devicereliability. Maximum ratings are absolute ratings. Exceeding only one of these values may causeirreversible damage to the component.
BFP196WNLow noise silicon bipolar RF transistor
Absolute maximum ratings
Preliminary datasheet 3 Revision 1.02017-01-20
2 Thermal characteristics
Table 2 Thermal resistance
Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max.
Junction - soldering point RthJS – 115 – K/W 1)
Figure 1 Absolute maximum power dissipation Ptot vs. Ts
Note: In the horizontal part of the above curve the junction temperature TJ is lower than TJ,max. In thedeclining slope it is TJ = TJ,max. Ptot has to be reduced according to the curve in order not to exceedTJ,max. It is TJ,max = TS + Ptot * RTHJS.
1 For the definition of RthJS please refer to the application note AN077
BFP196WNLow noise silicon bipolar RF transistor
Thermal characteristics
Preliminary datasheet 4 Revision 1.02017-01-20
3 Electrical performance in test fixture
3.1 DC parameter table
Table 3 DC characteristics at TA = 25 °C
Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max.
Collector emitter breakdown voltage VCEO 12 – – V IC = 1 mA, open base
Collector emitter leakage current ICES – – 100 μA VCE = 20 V, VBE = 0 VEmitter / base shortcircuited
Collector base leakage current ICBO – – 100 nA VCB = 10 V, VBE = 0Open emitter
Emitter base leakage current IEBO – – 1 μA VEB = 1 V, IC = 0Open collector
DC current gain hFE 70 100 140 VCE = 8 V, IC = 50 mAPulse measured
3.2 AC parameter tables
Table 4 General AC characteristics at TA = 25 °C
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Transition frequency fT 5 7.5 – GHz VCE = 8 V, IC = 90 mA,f=500 MHz
Collector base capacitance CCB – 0.9 – pF VCB = 10 V, VBE = 0 V,f = 1 MHzEmitter grounded
Collector emitter capacitance CCE – 0.35 – pF VCE = 10 V, VBE = 0 V,f = 1 MHzBase grounded
Emitter base capacitance CEB – 3.8 – pF VEB = 0.5 V, VCB = 0 V,f = 1 MHzCollector grounded
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 5 Revision 1.02017-01-20
Measurement setup for the AC characteristics shown in the following tables is a test fixture with Bias T’s in a 50Ω system, TA = 25 °C.
Bias-T
GND
RFOUT
VCE
14
3 2Bias-TRFIN
VBE
Figure 2 BFP196WN testing circuit
Table 5 AC characteristics, VCE = 8 V, f = 0.45 GHz
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Power gainMaximum power gainTransducer gain
Gms|S21|2
––
23.519.0
––
dB IC = 50 mAZs = ZSopt, ZL = ZLoptZS=ZL=50 Ω
Minimum noise figure NFmin – 0.95 – dB IC = 20 mA, ZS = ZSopt
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
1932
––
dBm IC = 50 mAZS=ZL=50 Ω
Table 6 AC characteristics, VCE = 8 V, f = 0.9 GHz
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Power gainMaximum power gainTransducer gain
Gms|S21|2
––
17.013.0
––
dB IC = 50 mAZs = ZSopt, ZL = ZLoptZS=ZL=50 Ω
Minimum noise figure NFmin – 1.1 – dB IC = 20 mA, ZS = ZSopt
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
1932
––
dBm IC = 50 mAZS=ZL=50 Ω
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 6 Revision 1.02017-01-20
Table 7 AC characteristics, VCE = 8 V, f = 1.5 GHz
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Power gainMaximum power gainTransducer gain
Gms|S21|2
––
12.58.5
––
dB IC = 50 mAZs = ZSopt, ZL = ZLoptZS=ZL=50 Ω
Minimum noise figure NFmin – 1.7 – dB IC = 20 mA, ZS = ZSopt
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
1932
––
dBm IC = 50 mAZS=ZL=50 Ω
Table 8 AC characteristics, VCE = 8 V, f =1.9 GHz
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Power gainMaximum power gainTransducer gain
Gms|S21|2
––
116.5
––
dB IC = 50 mAZs = ZSopt, ZL = ZLoptZS=ZL=50 Ω
Minimum noise figure NFmin – 2.1 – dB IC = 20 mA, ZS = ZSopt
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
1932
––
dBm IC = 50 mAZS=ZL=50 Ω
Table 9 AC characteristics, VCE = 5 V, f = 2.4 GHz
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Power gainMaximum power gainTransducer gain
Gms|S21|2
––
9.74.8
––
dB IC = 50 mAZs = ZSopt, ZL = ZLoptZS=ZL=50 Ω
Minimum noise figure NFmin – 2.5 – dB IC = 20 mA, ZS = ZSopt
Linearity1 dB compression point at output3rd order intercept point at output
OP1dBOIP3
––
1932
––
dBm IC = 50 mAZS=ZL=50 Ω
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 7 Revision 1.02017-01-20
3.3 Characteristic DC diagrams
0 2 4 6 8 10VCE [V]
0
20
40
60
80
100
120
I C [m
A]
IB=85 µA
IB=171 µA
IB=256 µA
IB=341 µA
IB=427 µA
IB=682 µA
IB=597 µA
IB=768 µA
IB=512 µA
IB=853 µA
Figure 3 Collector current IC = f(VCE), IB = parameter
0 0.02 0.04 0.06 0.08 0.1IC [A]
80
90
100
110
120
130
140
hfe
Figure 4 Current gain hFE= f(IC), VCE = 8 V
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 8 Revision 1.02017-01-20
0.5 0.55 0.6 0.65 0.7 0.75 0.8VBE [V]
10-7
10-6
10-5
10-4
10-3
10-2
10-1I C
[A]
Figure 5 Collector current IC= f(VBE), VCE = 8 V
0.5 0.55 0.6 0.65 0.7 0.75 0.8VBE [V]
10-9
10-8
10-7
10-6
10-5
10-4
10-3
I B [A
]
Figure 6 Base current IB = f(VBE), VCE = 8 V
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 9 Revision 1.02017-01-20
0 0.5 1 1.5 2VEB [V]
10-14
10-13
10-12
10-11
10-10
10-9I B
[A]
Figure 7 Base/emitter leakage current IB = f(VEB), VCE = 8 V
Note: Regard absolute maximum ratings for IC , VCE and Ptot (see Table 1)
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 10 Revision 1.02017-01-20
3.4 Characteristic AC diagrams
0 20 40 60 80 100 120 140 160 180IC [mA]
0
1
2
3
4
5
6
7
8f T [G
Hz]
8V
5V
4V3V
2V
1V
Figure 8 Transition frequency fT = f(IC), VCE = parameter
0 1 2 3 4 5 6 7f [GHz]
0
5
10
15
20
25
30
Gai
n [d
B]
Gms
Gma
|S21|2
Figure 9 Gain Gms, Gma, IS21I2 = f(f), IC = 50 mA, VCE = 8 V
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 11 Revision 1.02017-01-20
0 20 40 60 80 100IC [mA]
0
5
10
15
20
25
30
35G
ma
[dB]
0.15GHz
0.45GHz
0.90GHz
1.50GHz 1.90GHz 2.40GHz
3.50GHz
Figure 10 Maximum power gain Gmax = f(IC), VCE = 8 V, f = parameter
0 2 4 6 8 10 12 14 16VCE [V]
0
5
10
15
20
25
30
35
Gm
a [d
B]
0.15GHz
0.45GHz
0.90GHz
1.50GHz
2.40GHz 1.90GHz
3.50GHz
Figure 11 Maximum power gain Gmax = f(VCE), IC = 50 mA, f = parameter
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 12 Revision 1.02017-01-20
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
-1
1.5
-1.5
2
-2
3
-3
4
-4
5
-5
10
-10
0.5
-0.5
0.1
-0.1
0.2
-0.2
0.3
-0.3
0.4
-0.4
5.0
1.02.0
3.05.0
0.013.0
4.0
0.01
6.0
2.01.0
0.01 to 6 GHz
4.0
6.0
20mA50mA
Figure 12 Output reflection coefficient S22 = f(f) at VCE = 8 V, IC = 20, 50 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
-1
1.5
-1.5
2
-2
3
-3
4
-4
5
-5
10
-10
0.5
-0.5
0.1
-0.1
0.2
-0.2
0.3
-0.3
0.4
-0.4
5.0
1.0
2.0
3.0
5.0
0.01
3.0
4.0
0.01
6.0
2.0
1.0
0.01 to 6 GHz
4.0
6.0
20mA50mA
Figure 13 Input reflection coefficient S11 = f(f) at VCE = 8 V, IC = 20, 50 mA
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 13 Revision 1.02017-01-20
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.45 to 2.4 GHz
0.450.9
1.5
1.9
2.4
0.45
0.9
1.5
1.92.4
20mA50mA
Figure 14 Source impedance for minimum noise figure ZSopt = f(f), VCE = 8 V, IC = 20, 50 mA
0 0.5 1 1.5 2 2.5f [GHz]
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
NF m
in [d
B]
20mA
50mA
Figure 15 Noise figure NFmin = f(f), VCE = 8 V, IC = 20, 50mA, ZS = ZSopt
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 14 Revision 1.02017-01-20
0 20 40 60 80 100IC [mA]
0
0.5
1
1.5
2
2.5
3
3.5N
F min
[dB]
0.45GHz0.9GHz
1.9GHz
1.5GHz
2.4GHz
Figure 16 Noise figure NFmin = f(IC), VCE = 8 V, f = parameter, ZS = ZSopt
0 0.5 1 1.5 2 2.5f [GHz]
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
NF5
0 [d
B]
20mA
50mA
Figure 17 Noise figure NF50 = f(f), VCE = 8 V, IC = 20, 50 mA, ZS = 50 Ω
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 15 Revision 1.02017-01-20
0 20 40 60 80 100IC [mA]
0
1
2
3
4
5
6
7N
F50
[dB]
0.45GHz0.9GHz
1.9GHz
1.5GHz
2.4GHz
Figure 18 Noise figure NF50 = f(IC), VCE = 8 V, f = parameter, ZS = 50 Ω
Note: The curves shown in this chapter Characteristic AC diagrams have been generated using typicaldevices but shall not be understood as a guarantee that all devices have identical characteristiccurves. TA = 25 °C.
BFP196WNLow noise silicon bipolar RF transistor
Electrical performance in test fixture
Preliminary datasheet 16 Revision 1.02017-01-20
4 SOT343 Package
SOT343-PO V08
1.25
±0.1
0.1 MAX.
2.1±
0.1
0.15 +0.1-0.050.3 +0.1
2 ±0.2±0.10.9
3
2
4
1
A
+0.10.6AM0.2
1.3
-0.05
-0.05
0.15
0.1 M4x
0.1
0.1
MIN
.
Figure 19 SOT343 package outline (dimension in mm)
0.6
SOT343-FP V08
0.8
1.6
1.15
0.9
Soldering Type: Reflow Soldering
Figure 20 SOT343 footprint (dimension in mm)
2005, JuneDate code (YM)
BGA420Type codePin 1
Manufacturer
Figure 21 SOT343 marking layout
SOT323-TP V02
0.24
2.15
82.
3
1.1Pin 1
Reel ø180 mm: 3.000 Pieces/ReelReels/Box: 1 x 3.000 = 3.000
Reel ø330 mm: 10.000 Pieces/ReelReels/Box: 1 x 10.000 = 10.000
Figure 22 SOT343 standard packing (dimension in mm)
BFP196WNLow noise silicon bipolar RF transistor
SOT343 Package
Preliminary datasheet 17 Revision 1.02017-01-20
Revision historyMajor changes since previous revision
Reference DescriptionRevision History: 2016-12-21, Revision 0.9
rev 0.9 Preliminary datasheet
BFP196WNLow noise silicon bipolar RF transistor
Revision history
Preliminary datasheet 18 Revision 1.02017-01-20
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Edition 2017-01-20Published byInfineon Technologies AG81726 Munich, Germany © 2017 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: [email protected] Document referenceIFX-kst1478698311373
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